OPTIMIZED LIGHT EMITTING DEVICE
20240282891 ยท 2024-08-22
Assignee
- Centre National De La Recherche Scientifique (Paris, FR)
- UNIVERSITE PARIS-SACLAY (Gif-Sur-Yvette, FR)
- INSTITUT D'OPTIQUE THEORIQUE ET APPLIQUEE (PALAISEAU CEDEX, FR)
Inventors
Cpc classification
G01T1/20186
PHYSICS
H01L33/507
ELECTRICITY
G01T1/20185
PHYSICS
International classification
Abstract
A light emitting device including a solid fluorescent material or a solid scintillator material adapted to absorb an incident light and then emit a luminescent light in the material, a portion, called trapped portion, of the luminescent light being trapped by total internal reflections in the material, the material including two parallel faces, called large faces, along an horizontal plane xy, and n?N>2 faces called side faces, and forming vertex between two adjacent side faces and a large face. The material has an invariance of the normals to said side faces by rotation by an angle of 2?/n in said horizontal plan around a z-axis perpendicular to the horizontal plane. The material has a vertex called virtual vertex that is beveled thus forming a surface called beveled vertex, or the material has an edge between two side faces.
Claims
1-12. (canceled)
13. A light emitting device comprising: a solid fluorescent material or a solid scintillator material adapted to absorb an incident light and then emit a luminescent light in said material, a portion, called trapped portion, of said luminescent light being trapped by total internal reflections in said material, said material comprising two parallel faces, called large faces, along an horizontal plane xy, and
14. The light emitting device according to claim 13, wherein said material is a rectangular parallelepiped.
15. The light emitting device according to claim 14, wherein an angular coordinates of said normal to said beveled vertex in an xyz frame of reference are (??45?;?=?35.3?)?10?.
16. A light emitting device comprising: a solid fluorescent material or a solid scintillator material adapted to absorb an incident light and then emit a luminescent light in said material, a portion, called trapped portion, of said luminescent light being trapped by total internal reflections in said material, said material comprising two parallel faces, called large faces, along an horizontal plane xy, and
17. The light emitting device according to claim 16, comprising a plurality of mirrors covering said side faces except for said beveled edge or said beveled vertex.
18. The light emitting device according to claim 16, wherein said material has an attenuation coefficient of said luminescent light ? such that 1/?>>2L, with L a maximum distance between two parallel side faces.
19. The light emitting device according to claim 16, wherein said material is a diamond crystal having nitrogen vacancy centers, said incident radiation (Ld) being emitted by a laser illuminating at least one face of the crystal.
20. The light emitting device according to claim 16, wherein the side faces are perpendicular to the large faces.
21. The light emitting device according to claim 16, further comprising a tapered conical adapter attached by a so-called upstream end adjacent to said beveled edge or vertex and an optical fiber connected to a so-called downstream end of the tapered adapter, said tapered adapter matching a numerical aperture of said exit beam to a numerical aperture of said optical fiber.
22. The light emitting device according to claim 16, wherein a ratio of the surface of the beveled edge or the beveled vertex to a surface of the faces of said material is lower than 1/10.
23. The light emitting device according to claim 22, wherein said ratio is lower than 1/100, preferably lower than 1/100.
24. An x-ray or gamma-ray imaging system comprising an x-ray or gamma-ray source and a detector comprising: a plurality of identical light emitting devices according to claim 13, arranged to form an array, said material of each device being a solid scintillator, a plurality of photodiodes each arranged opposite of said beveled edge or said beveled vertex of the material of each device.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0031] Other features, details and advantages of the invention will become apparent from the description made with reference to the annexed drawings, which are given as examples and which represent, respectively:
[0032]
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[0046]
[0047] In the drawings, unless otherwise indicated, the elements are not to scale.
DETAILED SPECIFICATION
[0048]
[0049] The crystal comprises two parallel faces, called large faces FE1, FE2, along a horizontal plane xy and comprises
faces, called side faces FL1, FL2, FL3, FL4. These side faces form vertex S1, S2, S3, S4, S5 between two adjacent side faces and a large face. Let us call {right arrow over (?.sub.i )} the normal to the side face FL.sub.i(see
[0050] As known to one skilled in the art, a portion, called trapped portion Lp, of said luminescent light is trapped by total internal reflection in said crystal. As previously stated, the ratio of trapped and untrapped rays is fixed by the index of the crystal and the index of the ambient medium, by the Snell-Descartes law. Trapped rays are noted Lp: these rays are trapped in the crystal due to the total internal reflection (TIR) on the different faces of the crystal. The untrapped rays are the rays that eventually leave the crystal. They can be separated into two sub-categories: guided rays Lg, which are guided by TIR on the large faces or side faces and emerge on one of the faces of the concentrator, and unguided rays L.sub.out, which emerge directly from the concentrator without being reflected on the faces.
[0051] The invention aims at creating artificial escape cones related to trapped rays of the structure within a predetermined range of angles, and recycling those rays to increase the light extraction efficiency and increase the luminance and power of the beam exiting the crystal of the invention compared to what was previously achieved in prior art crystals. The term recycling in this context means allowing the trapped rays within a predetermined range of angles to escape the crystal but only after an incoherent superposition of those rays inside the crystal, thus increasing the luminance and power of the beam L.sub.S exiting the crystal.
[0052] To this end, the crystal of the invention has an invariance of the normals to the side faces by rotation by an angle of 2?/n in the horizontal plan xy around a z-axis perpendicular to the horizontal plane. In the illustration of
[0053] To increase the light extraction efficiency, according to the first variant of the invention (illustrated in
[0054] According to the second variant of the invention (illustrated in
[0055] In each variant, the normal {right arrow over (n)} to said beveled vertex or edge has a predetermined orientation adapted to recycle the most trapped rays and therefore increase the light extraction efficiency by exploiting the structure's symmetry. Indeed, as will be explained later, the orientation of the normal to the beveled vertex or edge is the critical parameter controlling the predetermined range of angles of trapped rays that can exit the crystal through the exit face: the beveled edge or the vertex.
[0056] The first variant exploits the structure symmetry of the crystal in a plane. More precisely, in the first variant of the invention, the normal {right arrow over (n)} to the beveled edge is parallel to the sum of the normal of the nearest side faces (ie: the faces forming the virtual edge), which means that :{right arrow over (n)} is proportional to {right arrow over (n)}.sub.1+{right arrow over (n)}.sub.2. A tolerance of the normal orientation is given by the dimension of the escape cone and the losses of the structure: a maximum angle of +/?10? between {right arrow over (n)} and {right arrow over (n)}.sub.1+{right arrow over (n)}.sub.2 is acceptable. For an angle larger than 10?, light recycling is reduced and the light extraction efficiency of the crystal CL decreases in an unwanted fashion.
[0057] The second variant of the invention fully exploits the symmetry of the structure. Thus, in the second variant of the invention, the normal {right arrow over (n)} to the beveled vertex is parallel to the sum of the normal of all the nearest faces (ie: the faces forming the virtual vertex), which means that {right arrow over (n)} is proportional to {right arrow over (n)}.sub.1+{right arrow over (n)}.sub.2+{right arrow over (n)}.sub.11, with {right arrow over (n)}.sub.11 the normal to the large face FE1 forming the virtual vertex. A tolerance of the normal orientation is given by the dimension of the escape cone and the losses of the structure: a maximum angle of +/?10? between {right arrow over (n)} and {right arrow over (n)}.sub.1+{right arrow over (n)}.sub.2+{right arrow over (n)}.sub.11 is acceptable. For an angle larger than 10?, light recycling is reduced and the light extraction efficiency of the crystal CL decreases in an unwanted fashion.
[0058]
[0059] As can be seen in
[0060]
[0061] In opposite, in the prior art crystal of
[0062] As an example, in the crystal CL of
[0063] However, to achieve this theorical limit of light extraction efficiency it is necessary that there is no overlap between the angles forming the escape cones created by the beveled edge or vertex and those forming the cones of the untrapped rays. Indeed, if such an overlap exists, the rays propagating in the crystal with an angle in that overlap range will leak out of the crystal through the side faces or the large faces and therefore not contribute to the increased luminance and power of the exit beam. This will lead to a relative decrease in light extraction efficiency. This means that this theorical limit is more easily achievable with crystals having a high refraction index (eg: diamond), because this will lead to a smaller critical angle ?.sub.c and therefore will leave more space for the escape cones created by the beveled edge or index. Obviously, the value of this theorical limit of the light extraction efficiency is ultimately limited by the critical angle ?.sub.c and the Snell-Descartes law.
[0064]
[0065]
[0066] If an overlap exists between the escape cones L.sub.g+L.sub.out and the escape cones L.sub.s, in an embodiment of the invention, the device 1 comprises a plurality of mirrors covering the side faces, except for the beveled edge or the beveled vertex. This leads to a recycling of the rays propagating with an angle inside that overlap range of angles which can then exit through the beveled edge or vertex instead of leaking out the crystal through the side faces or large faces. If the mirrors cover the appropriate faces of the crystal, they can increase the light extraction efficiency of the device up to the aforementioned theorical limit. By mirror, in this context, we mean reflecting surface with a reflection coefficient for the luminescent light higher than 50%, preferably higher than 90%, preferably higher than 99%.
[0067] In a preferred embodiment of the invention, the normal to the side faces are in the horizontal plane xy (plane of the large faces). This means that the side faces are perpendicular to the large faces. In this configuration, the escape cones of the side faces are self-imaged by the larges faces considered as mirror. This geometry is advantageous to best recycle the trapped rays via the beveled edge or vertex and achieve the highest light extraction possible. Indeed, when the side faces are not perpendicular to the large faces, images of the escape cone of the side faces by the large face are not equal to those escape cones. Thus, there if there are n side faces, there is n escape cones associated with those side faces and n images created by reflection on the other faces of the crystal. This implies that, when the side faces are not perpendicular to the large faces, it is more complex to achieve no overlap between the escape cone of the beveled surface and its images by reflection, and the 2n escape cones associated with the side faces (ie: the n real escape cones and the n images by reflection). Thus, for some geometry and for a given index of the crystal, the aforementioned embodiment where the side faces are perpendicular to the large faces can achieve a higher light extraction efficiency than when the side faces are not perpendicular to the large faces.
[0068]
[0069] For both
in all configurations. For the calculation of figure SA, the assumption was made that the emission of the exit beam just after the exit face is lambertian and the value of luminance have been divided by the luminance value of the exit beam L.sub.s of the Prior art configuration A for ?=0 cm.sup.?1.
[0070] One can see from
the first and the second variant of the invention lead to a marginally better extraction efficiency and an exit beam with higher luminance than the Prior art configuration A. However, for ?<5.Math.10.sup.?3 cm.sup.?1 (ie 1/?>>2L), the first and the second variant of the invention lead to significantly better extraction efficiency and an exit beam with much higher luminance than the Prior art configuration A. For example, for ?=5.Math.10.sup.?4 cm.sup.?1, the luminance of the exit beam L.sub.s in the prior art configuration A is 0.75 ua, whereas the luminance of the exit beam L.sub.s in the first variant of the invention is 1.5 ua, and the luminance of the exit beam L.sub.s in the second variant of the invention is 2.5 ua. For ?=5.Math.10.sup.?4 cm.sup.?1, the extraction efficiency in the prior art configuration A is 14%, whereas it is 24% in the first variant of the invention and 38% in the second variant of the invention. The light extraction efficiency reaches over 50% for ?=2.Math.10.sup.?4 cm.sup.?1 in the second variant of the invention whereas for the prior art configuration A it is still merely 15%.
[0071] One can show that rays exiting through the beveled edge or vertex of the crystal of the invention have a mean path longer than rays exiting side face SE in the prior art crystal of
[0072] It will be noted that the surface of the beveled edge or vertex has direct influence on the mean path L.sub.mean of the rays exiting through the beveled edge or vertex. For example, for the second variant of the invention, with an optimal normal (bottom configuration of
with s.sub.2 the area of the beveled vertex. Preferably and to benefit more greatly from the advantages granted by the configurations of the invention, the crystal CL of the invention has an attenuation coefficient of the luminescent light ? such that 1/?>>2L. In the more general case where the crystal is not rectangular in shape, L is the maximum distance between two parallel side faces.
[0073]
[0074]
[0075] In an embodiment of the invention, compatible with the first and the second variant of the invention, the crystal is a diamond that comprises nitrogen vacancy centers. NV (nitrogen vacancy) centers are impurities created by irradiation in diamonds and used for their fluorescence properties. In this embodiment, the incident radiation Ld being emitted by a laser illuminating at least one of the large faces. Typically, they absorb green light and emit red light. Given the index of the diamond n=2.4, the light exiting into the air through a face of a parallelepiped represents 4.5% of the total light. In general, the light is collected by a confocal microscope. For example, with a numerical aperture of 1.35 (immersion objective), the light collected represents a maximum of 8.6% of the light emitted. The sensitivity of the experiments depending on the amount of signal collected, many strategies have been tried to increase this value. Thus, the diamond crystal CL of the invention can drastically increase the light extraction efficiency. As an example, in the second variant of the invention, with a rectangular shaped crystal in ambient air and an optimal normal, 8 escape cones can be recycled in the exit beam L.sub.s. This means that the light extraction efficiency is 4.5?8=36% in this example.
[0076] The control on the surface size of the beveled vertex makes it possible to use photodectectors of smaller surface which have a very short response time, necessary for experiments with NV centers (lifetime of about ten ns, interrogation sequence of transitions in the ?s domain), while collecting a maximum of flux.
[0077]
[0078] The bottom configuration of
[0079] To ensure the conservation of the ?tendue (or throughput), the diameter of the upstream end ?.sub.u and the diameter of the downstream end ?.sub.d are linked by the following relationship ?.sub.u?n?sin ?.sub.m=?.sub.d?ON.sub.f, with n the index of the crystal CL and ?.sub.m the collection angle inside the crystal of the rays that will be guided in the fiber. If a glue of index n is used as an intermediate medium, we have: ?.sub.u?n?sin ?.sub.m=?.sub.u?n?sin ?.sub.m=?.sub.d?ON.sub.f. To collect more rays than by direct coupling of the fiber to the emitting medium, it is necessary that the numerical aperture at the input of the cone is larger than the numerical aperture at the output. This implies that ?.sub.u<?.sub.d. It should be noted that the diameter of the upstream end ?.sub.u is limited by a minimum value that depends on the index n of the intermediate medium. Assuming the numerical aperture of the adapter is sufficient to collect all possible angles, and ?.sub.m=90?, we need:
[0080] Top configuration of
[0081] Middle configuration of
[0082]
[0083] The curves in
[0084] In the calculations of the C21 curve, the core of the fiber (or its antecedent by the cone) is inscribed in the output area, that is the beveled edge or vertex surface (C21 configuration). In this case, the fiber does not collect all the rays that come out of the exit face.
[0085] In the calculations of the C22 curve the core of the fiber completely encompasses the output area (C22 configuration). In this case, all the rays exiting the beveled edge or vertex are coupled into the fiber. However, this is done at the cost of an output area 4 times smaller than in the C21 configuration. The exit probabilities through the zone in question are therefore much lower, lengthening the propagation length in the medium before finding the exit.
[0086] The curve corresponding to the prior art configuration A of
[0087] The curve corresponding to the prior art configuration B of
[0088] In the three configurations of
[0089] In
[0090] The curve C01 in
[0091]
[0092] From
[0093] Another object of the invention concerns scintillator crystals. As previously stated, the energy resolution of scintillators depends greatly on the light extraction efficiency of the crystal. Scintillators are often assembled in the form of arrays in order to perform X-ray/gamma imaging. For compactness reason, a crystal with parallelepiped geometry is most often chosen. A critical parameter of this imaging method is the pixel density, where each scintillator of the array represents a pixel. Indeed, in the case of scattering surfaces, it is necessary to optically isolate the crystals from each other by reflectors in order to avoid cross-talks. That is to say, to avoid that the light emitted in a first crystal is detected as coming from a second crystal because coming out by a face of the second crystal.
[0094] To alleviate certain problems of the prior art, another object of the invention is an x-ray or gamma-ray imaging system comprising an x-ray or gamma-ray source and a detector Det. The detector Det is illustrated in
[0095] Compared to scintillator detector arrays of prior art, a crucial advantage of the imaging system using the detector of
[0096] Having an area of the beveled edge or the beveled vertex of the crystal that is smaller than the area of the side faces between the beveled edge or the beveled vertex makes it possible to use photodiodes of smaller surface which have a very short response time, while collecting a maximum of flux. Thus, preferably, the surface of the photodiodes and the surface of the beveled edge or vertex are smaller than the surface of the side faces between the beveled edge or vertex.
[0097] The ratio of the surface of the beveled edge or the beveled vertex to the total surface of the crystal CL (noted S.sub.bev/S.sub.tot) is a crucial parameter to control the so-called concentrator effect concentrating the luminescent light into an exit beam with a high flux. The smaller the ratio S.sub.bev/S.sub.tot, the higher the flux of the exit beam (given that the propagation losses do not compensate the concentrator effect). Indeed, a small ratio S.sub.bev/S.sub.tot forces the luminescent light to exit through a small exit area while recycling a high number of trapped rays and while allowing the crystal CL to be pumped via large faces with relatively large area. Further, as stated above, the use of a smaller S.sub.bev/S.sub.tot ratio is useful to adapt the exit area to the area of an optional photodetector with a small surface to ensure a very short response time.
[0098] Thus, preferably, in all the embodiments of the invention, the ratio S.sub.bev/S.sub.tot is lower than 1/10, preferably lower than 1/100 and preferably still lower than 1/1000. Through simulations and experiments, the inventor have identified that the use of a ratio S.sub.bev/S.sub.tot lower than 1/10 allows for a satisfying concentrator effect of the luminescent light while selection of a ratio S.sub.bev/S.sub.tot lower than 1/100 and preferably lower than 1/1000 allows for a greater flux of the exit beam.
[0099] The following table gives chosen embodiments with a parallelepiped crystal CF with a beveled edge, using different parameters and different materials. In the following examples, the edge is beveled such that it has a square shape (useful for most applications to provide a symmetrical exit beam with a surface t.sup.2 and the ratio S.sub.bev/S.sub.tot can be approximated as
TABLE-US-00001 Fluorescent NV Ce:YAG plastic Diamond Scintillators l (mm) 100 30 4 10 w (mm) 14 10 4 2 t (mm) 1 3 0.2 2 ratio 3.30E?04 1.07E?02 1.14E?03 4.55E?02
[0100] As stated previously, the shape of the parallelepiped structure forces the rays to be recycled in the structure until they exit the beveled edge. The following ratios and dimensions give a crystal CL with an exit surface particularly suited to be combined with a photodetector for a variety of applications.