OPTICAL SCANNING APPARATUS, ELECTRONIC EQUIPMENT

Abstract

An optical scanning apparatus includes a mirror, a detection section, and a dummy capacitance section. The detection section generates capacitance between movable and fixed electrodes. The dummy capacitance section generates dummy capacitance between first and second electrodes. The four electrodes are provided on the same active layer and are separated. The active layer is arranged to face a support layer with an insulating layer in between. A first parasitic capacitance generated between the active layer including the fixed electrode and the support layer is equivalent to a second parasitic capacitance generated between the active layer including the first electrode and the support layer. The capacitance of the detection section and the first parasitic capacitance are connected in series, and the dummy capacitance and the second parasitic capacitance are connected in series.

Claims

1. An optical scanning apparatus comprising: a mirror having a reflective surface; a driving section that swings the mirror; a detection section that detects the movement of the driving section by change of a capacitance; and a dummy capacitance section that generates a dummy capacitance that is approximately equivalent to the capacitance in an initial state of the detection section; wherein the detection section has a movable electrode whose position changes in relation to the movement of the driving section and a fixed electrode whose position does not change in relation to the movement of the driving section, and is configured such that the capacitance is generated between the movable electrode and the fixed electrode, wherein the dummy capacitance section is configured to include a first electrode and a second electrode, and is configured to generate the dummy capacitance between the first electrode and the second electrode, wherein the movable electrode, the fixed electrode, the first electrode, and the second electrode are provided in an active layer formed in the same semiconductor layer, and are each separated, wherein the active layer is arranged to face a support layer which is a common semiconductor layer, with an insulating layer in between, wherein a first parasitic capacitance that occurs between the active layer provided with the fixed electrode and the supporting layer, and a second parasitic capacitance that occurs between the active layer provided with the first electrode and the supporting layer, are approximately equivalent, and wherein the capacitance of the detection section and the first parasitic capacitance are connected in series to form a first signal path, and the dummy capacitance and the second parasitic capacitance are connected in series to form a second signal path.

2. The optical scanning apparatus according to claim 1, wherein the first signal path and the second signal path are connected in parallel, and wherein the active layer is configured to include a detection pad that can obtain a partial voltage between the capacitance of the detection section and the first parasitic capacitance, and a dummy detection pad that can obtain a partial voltage between the dummy capacitance and the second parasitic capacitance.

3. The optical scanning apparatus according to claim 1, wherein the support layer has a read signal input pad configured to be exposed on the same side as the reflective surface of the mirror.

4. The optical scanning apparatus according to claim 1, wherein the area of the fixed electrode in a plane view and the area of the first electrode in a plane view are approximately equal.

5. The optical scanning apparatus according to claim 1, wherein the movable electrode and the fixed electrode each have a comb teeth electrode, and capacitance is generated between these comb teeth electrodes.

6. The optical scanning apparatus according to claim 1, wherein the first electrode and the second electrode each have a comb teeth electrode, and dummy capacitance is generated between these comb teeth electrodes.

7. The optical scanning apparatus according to claim 1, wherein a read signal is input to the support layer, and a deflection angle of the mirror is determined based on a difference between a partial voltage between the capacitance of the detection section and the first parasitic capacitance, and the partial voltage between the dummy capacitance and the second parasitic capacitance.

8. The optical scanning apparatus according to claim 1, wherein the support layer has a plurality of through holes each reaching the insulating layer at a portion related to the generation of each of the first parasitic capacitance and the second parasitic capacitance.

9. An electronic equipment comprising the optical scanning apparatus according to claim 1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG. 1 is a plane view showing the configuration of an optical scanning apparatus (optical deflector) according to a first embodiment.

[0010] FIG. 2A is an enlarged view of a deflection angle detection section.

[0011] FIG. 2B is an enlarged view of a dummy comb teeth structure section.

[0012] FIG. 3A is an enlarged view of a detection pad.

[0013] FIG. 3B is an enlarged view of a dummy detection pad.

[0014] FIG. 4 is an enlarged plane view of the vicinity of a read signal input pad.

[0015] FIG. 5 is a schematic cross-sectional view corresponding to the a-a line direction shown in FIG. 1.

[0016] FIG. 6 is a diagram for explaining the portion in which parasitic capacitance is generated.

[0017] FIG. 7 is a plane view for explaining capacitance components formed in each portion of the optical scanning apparatus.

[0018] FIG. 8A is a cross-sectional view showing the connection relationship of locations forming capacitance components in the optical scanning apparatus.

[0019] FIG. 8B is an equivalent circuit diagram showing the connection relationship of each capacitance component.

[0020] FIG. 9A is a waveform diagram showing an example of a read signal.

[0021] FIG. 9B is a waveform diagram showing an example of a voltage signal V.sub.out1.

[0022] FIG. 9C is a waveform diagram showing an example of a voltage signal V.sub.out2.

[0023] FIG. 9D is an enlarged waveform diagram showing an example of a differential signal between voltage signals V.sub.out1 and V.sub.out2.

[0024] FIGS. 10A to 10G are process diagrams showing an example of a method for manufacturing an optical scanning apparatus.

[0025] FIGS. 11A to 11F are process diagrams showing an example of a method for manufacturing an optical scanning apparatus.

[0026] FIG. 12 is a plane view showing the configuration of an optical scanning apparatus according to a second embodiment.

[0027] FIG. 13 is a partial enlarged view of the optical scanning apparatus shown in FIG. 12.

[0028] FIG. 14 is a partial enlarged view of the optical scanning apparatus shown in FIG. 12.

[0029] FIGS. 15A and 15B are partial cross-sectional views of the optical scanning apparatus of a second embodiment.

MODE FOR CARRYING OUT THE INVENTION

First Embodiment

[0030] FIG. 1 is a plane view showing the configuration of an optical scanning apparatus (optical deflector) 1 according to a first embodiment. In the present embodiment, the surface into which the laser beam to be scanned enters is defined as the front surface, and the surface on the opposite side thereof is defined as the back surface. FIG. 1 shows a plane view seen from the front surface side. As illustrated, the optical scanning apparatus 1 of the present embodiment has an almost bilaterally symmetrical structure in a plane view.

[0031] The optical scanning apparatus 1 is configured to include a reflecting section (mirror) 2, a torsion bar 3, inner piezoelectric actuators 4, an inner frame section 5, outer piezoelectric actuators (drive sections) 6, and an outer frame section (frame) 7 as a main component. The horizontal direction in the figure is defined as the X axis, the vertical direction as the Y axis, and the thickness direction of the optical scanning apparatus 1 (direction perpendicular to the diagram sheet surface) as the Z axis.

[0032] The reflecting section 2 is a movable mirror having a substantially circular reflecting surface in a plane view, and is configured to be swingable around the Y-axis and the X-axis by the inner piezoelectric actuators 4 and the outer piezoelectric actuators 6. By reflecting a laser beam by such reflecting section 2, the laser beam incident on the reflecting section 2 can be scanned in a two-dimensional direction.

[0033] The torsion bar 3 is provided, in a plane view, above and below the reflecting section 2. The torsion bar 3 extends along the Y-axis direction from the reflecting section 2 and is coupled to the inner periphery of the inner frame section 5. Further, the torsion bar 3 is coupled to the upper and lower ends of the left and right inner piezoelectric actuators 4.

[0034] The inner piezoelectric actuators 4 and the outer piezoelectric actuators 6 are provided one each on the left and right sides of the reflecting section 2 in a plane view.

[0035] The inner piezoelectric actuators 4 are coupled to each other, and have an overall shape close to an ellipse that extends along the Y-axis in a plane view.

[0036] The outer piezoelectric actuators 6 are interposed between the inner frame section 5 and the outer frame section 7. Each of the outer piezoelectric actuators 6 is configured to include a plurality of piezoelectric cantilevers 13. Among the piezoelectric cantilevers 13, the one closest to the reflecting section 2 and the one farthest from the reflecting section 2 have shorter lengths in the Y-axis direction than the other piezoelectric cantilevers 13. Further, each piezoelectric cantilever 13 has a width in the X-axis direction that becomes relatively small as it is located closer to the reflecting section 2.

[0037] The inner frame section 5 surrounds the reflecting section 2 and the torsion bar 3. The inner frame section 5 has an overall shape close to an ellipse that extends along the Y-axis in a plane view.

[0038] A driving pad 15 and a driving GND pad 16 are respectively provided on the left and right upper sides of the outer frame section 7 in a plane view. The driving pad 15 has a plurality of circular portions in a plane view. The driving pad 15 and the driving GND pad 16 are electrically/physically connected to the outside via bonding wires (not shown) when the optical scanning apparatus 1 is packaged.

[0039] The driving pad 15 and the driving GND pad 16 on the right side in the figure are used to supply a drive voltage to the inner piezoelectric actuator 4 on the right side in the figure. Similarly, the driving pad 15 and the driving GND pad 16 on the left side in the figure are used to supply a drive voltage to the inner piezoelectric actuator 4 on the left side in the figure. Each inner piezoelectric actuator 4 is interposed between the torsion bar 3 and the inner frame section 5, and oscillates the reflecting section 2 around the Y axis at a first frequency by twisting the torsion bar 3. Resonance is used for this oscillation. The first frequency is, for example, 15 kHz to 25 kHz.

[0040] Each outer piezoelectric actuator 6 is supplied with a drive voltage of a second frequency via the driving pad 15 and the driving GND pad 16. Thereby, the reflecting section 2 oscillates around the X-axis at the second frequency. Resonance is not used for the oscillation around the X-axis. The second frequency is lower than the first frequency described above, and is set to, for example, 60 Hz.

[0041] Laser beam that enters the reflecting section 2 from a light source (not shown) is reflected in a direction according to the swing angle (deflection angle) of the reflecting section 2 around the X-axis and the Y-axis. The reflecting direction (deflecting direction) changes moment by moment according to changes in the swing angle of the reflection section 2. Thereby, the laser beam reflected by the reflection section 2 is scanned around the Y-axis at the first frequency and scanned around the X-axis at the second frequency.

[0042] A deflection angle detection section (a detection section) 20 is for detecting the deflection angle of the reflection section 2 by detecting the movement accompanying non-resonant vibration by the outer piezoelectric actuators 6 as a change of a capacitance, and is configured to include a fixed electrode 20a and a movable electrode 20b. The fixed electrode 20a is configured integrally with the outer frame section 7. This fixed electrode 20a has a comb teeth electrode 20c, as shown in an enlarged view in FIG. 2A. The movable electrode 20b has a comb teeth electrode 20d, as shown in an enlarged view in FIG. 2A. The comb teeth electrode 20c and the comb teeth electrode 20d are arranged so that each other's electrode branches form a line one by one in turn along the X-axis direction. The position of the comb teeth electrode 20c of the fixed electrode 20a does not change regardless of the movement of the outer piezoelectric actuators 6, and the position of the comb teeth electrode 20d of the movable electrode 20b changes in relation to the movement of the outer piezoelectric actuators 6. A capacitance component (capacitance) is formed between the comb teeth electrode 20c and the comb teeth electrode 20d, and its magnitude changes in accordance with the positional change of the comb teeth electrode 20d.

[0043] A dummy comb teeth structure section 21 is a portion provided in a pair with the deflection angle detection section 20, and is configured to include a fixed electrode 21a and a movable electrode 21b. The fixed electrode 21a is configured integrally with the outer frame section 7. The movable electrode 21b has a comb teeth electrode 21d, as shown in an enlarged view of FIG. 2B. In the dummy comb teeth structure section 21, the fixed electrode 21a is not provided with a comb teeth electrode. Therefore, no capacitance component is formed in the dummy comb teeth structure section 21. The dummy comb teeth structure section 21 is provided to balance the weight between the left and right outer piezoelectric actuators 6.

[0044] The dummy comb teeth structure section 21 and the deflection angle detection section 20 are electrically and physically separated from each other by a groove 17 provided between the respective fixed electrodes 20a and 21a, at a Si layer 53 which is an active layer (refer to FIG. 5, which will be described later). The groove 17 reaches a SiO.sub.2 layer 52 and is electrically and physically separated from the SiO.sub.2 layer 52.

[0045] A detection pad 22 is connected to the fixed electrode 20a and is arranged at the lower right end in the figure. A detection GND pad 24 is arranged above the detection pad 22 in the figure. As shown in an enlarged view in FIG. 3A, the detection pad 22 has a comb teeth electrode 22a. Further, an island-shaped dummy electrode branch 24a is provided between the respective electrode branches of the comb teeth electrode 22a. The dummy electrode branches 24a are not connected to the detection GND pad 24, etc., and are separated into island shapes. A comb teeth structure section 26 is configured by the comb teeth electrode 22a and each dummy electrode branch 24a. This comb teeth structure section 26 is a part to maintain a balance with the dummy detection section 27 and to equalize the etching area. The detection GND pad 24, the comb teeth electrode 22a, and the dummy electrode branch 24a are electrically and physically separated from each other by the groove 17 at the Si layer 53.

[0046] A dummy detection pad 23 is connected to the fixed electrode 21a and is arranged at the lower left end in the figure. A detection GND pad 25 is arranged above the dummy detection pad 23 in the figure. As shown in an enlarged view in FIG. 3B, a comb teeth electrode (first electrode) 23a is connected to the dummy detection pad 23, and a comb teeth electrode (second electrode) 25a is connected to the detection GND pad 25, and a dummy detection section (a dummy capacitance section) 27 is configured by these comb teeth electrodes 23a and 25a. The comb teeth electrodes 23a and 25a are electrically and physically separated from each other by the groove 17 at the Si layer 53. The size of the capacitance component (dummy capacitance) formed by the dummy detection section 27 is designed so that it becomes approximately equivalent to the capacitance component formed by the comb teeth electrode 20c and the comb teeth electrode 20d of the deflection angle detection section 20 in the initial state. Here, note that the initial state refers to a state in which the outer piezoelectric actuator 6 does not fluctuate. The dummy detection section 27 is formed in the outer frame section 7 so that the capacitance component does not change due to the deflection angle.

[0047] A read signal input pad 28 is arranged above the detection GND pad 25 on the left end side in the figure. A read signal input pad 29 is arranged above the detection GND pad 24 on the right end side in the figure. These read signal input pads 28 and 29 are used to input signals (read signals) used for reading the deflection angle. FIG. 4 shows an enlarged plane view of the vicinity of the read signal input pad 28. Here, note that although an enlarged view is omitted, the read signal input pad 29 has a similar structure.

[0048] FIG. 5 is a schematic cross-sectional view corresponding to the a-a line direction shown in FIG. 1. Here, note that in FIG. 5, the structure of the optical scanning apparatus 1 is illustrated in a modified manner in order to make it easier to understand the laminated structure and the configuration of each section. The optical scanning apparatus 1 of the present embodiment has a basic structure in which the SiO.sub.2 (silicon dioxide) layer 52 as an etching stop layer on one side (upper side in the figure) of the Si (silicon) layer 51 as a support layer to retain the reflective section 2, etc. is provided, and in which the Si layer 53 as an active layer for forming elements is provided thereon.

[0049] Specifically, the optical scanning apparatus 1 is configured to include, in order from the bottom in the figure, a SiO.sub.2 layer 50 as an insulating layer, the Si layer 51 as a support layer that holds the element, the SiO.sub.2 layer (box layer) 52 as an etching stop layer, the Si layer 53 as an active layer for forming an element, a SiO.sub.2 layer 54 as an insulating layer to insulate from the piezoelectric driving section on the upper layer side, a Pt (platinum) layer 55 as a lower electrode layer, a PZT (lead zirconate titanate) layer 56 as a piezoelectric layer, and a Pt layer 57 as an upper electrode layer. Each of these layers is patterned into a predetermined shape.

[0050] As shown in the figure, based on a reinforcing rib layer 60 formed by etching the Si layer 51 halfway, the reflective section 2 is configured by laminating the SiO.sub.2 layer 52, the Si layer 53, the SiO.sub.2 layer 54, and the Pt layer 55.

[0051] The left and right inner piezoelectric actuators 4 as a resonance driving section is configured by laminating the Si layer 53, the SiO.sub.2 layer 54, the Pt layer 55, the PZT layer 56, and the Pt layer 57. Similarly, each piezoelectric cantilever 13 of the left and right outer piezoelectric actuators 6 as a non-resonant driving section is configured by laminating the Si layer 53, the SiO.sub.2 layer 54, the Pt layer 55, the PZT layer 56, and the Pt layer 57.

[0052] The fixed electrode 20a and its comb teeth electrode 20c, and the movable electrode 20b and its comb teeth electrode 20d, which constitute the deflection angle detection section 20, are each composed of the Si layer 53. That is, the fixed electrode 20a and the movable electrode 20b are formed in the same semiconductor layer. Thereby, the Si layer 51 as a support layer can be used as a base of the element. The comb teeth electrode 20d of the movable electrode 20b is connected to the detection GND pad 24 through the Si layer 53 surrounded by a groove. The comb teeth electrode 20c of the fixed electrode 20a is integrated with the outer frame section 7.

[0053] Similarly, the comb teeth electrode 21d that constitutes the dummy comb teeth structure section 21 is composed of the Si layer 53.

[0054] The left and right detection GND pads 24 and 25 are provided on the Si layer 53 which is stacked on the SiO.sub.2 layer 50, the Si layer 51, and the SiO.sub.2 layer 52. Further, each of the left and right signal reading signal input pads 28 and 29 is configured to expose the Si layer 51 on the same side as the reflective surface of the reflective section 2 by etching up to the SiO.sub.2 layer 52 on the Si layer 51 as a support layer. This allows electrical connection to the Si layer 51 from the upper surface side of the optical scanning apparatus 1 (the side on which the laser beam is incident).

[0055] FIG. 6 is a diagram for explaining the portion in which parasitic capacitance is generated. In FIG. 6, a plane view of the optical scanning apparatus 1 viewed from the back side is shown, and four portions 71, 72, 73, and 74 where parasitic capacitance is generated are shown in dark gray. Since the optical scanning apparatus 1 of the present embodiment uses an SOI (Silicon on Insulator) structure as shown in FIG. 5, at a portion where the Si layer 51 which is a support layer and the Si layer 53 which is an active layer overlap, an SiO.sub.2 layer 52 is sandwiched between each layer, thereby parasitic capacitance is formed. The portions 71 and 72 correspond to regions in which the driving pad 15, the driving GND pad 16, etc. are formed, respectively. The portions 73 and 74 correspond to regions in which the fixed electrodes 20a and 21a are formed, respectively. The portion 73 and the portion 74 are separated by the groove 17 described above.

[0056] FIG. 7 is a plane view for explaining capacitance components formed in each portion of the optical scanning apparatus. FIG. 7 is a scaled-down version of the plane view shown in FIG. 1, and shows locations where capacitance components are formed. The capacitance component corresponding to the formation region of the driving pad 15, driving GND pad 16, etc. on the upper left side in the figure is defined as C.sub.r-L. The capacitance component corresponding to the formation region of the driving pad 15, driving GND pad 16, etc. on the upper right side of the figure is defined as C.sub.r-R. Further, the capacitance components (first parasitic capacitance, second parasitic capacitance) corresponding to the formation regions of fixed electrodes 20a, 21a, etc. are defined as C.sub.s-L and C.sub.s-R, respectively. Further, the capacitance component formed at the deflection angle detection section 20 (capacitance of the detection section) is defined as C.sub.v. The capacitance component (dummy capacitance) formed at the dummy detection section 27 is defined as C.sub.d.

[0057] FIG. 8A is a cross-sectional view showing the connection relationship of locations forming capacitance components in the optical scanning apparatus. Here, for ease of understanding, portions related to capacitance components are shown in a modified manner. As shown in the figure, the capacitance component C.sub.s-L is formed on a signal path leading from the Si layer 51 which is a support layer, to the dummy detection pad 23. The capacitance component C.sub.s-R is formed on a signal path leading from the Si layer 51 which is a support layer, to the detection pad 22. The capacitance component C.sub.r-L and the capacitance component C.sub.r-R are each formed on a signal path leading from the Si layer 51 which is a support layer, to the detection GND pad 24. Further, the capacitance component (dummy capacitance) C.sub.d is formed in the dummy detection section 27 and is connected to the detection GND pad 24 (i.e., GND potential). Further, the capacitance component (detection capacitance) C.sub.v is formed at the deflection angle detection section 20 and is connected to the detection GND pad 24 (i.e., GND potential).

[0058] FIG. 8B is an equivalent circuit diagram showing the connection relationship of each capacitance component. As shown, the capacitance component C.sub.s-L and the capacitance component C.sub.d are connected in series, the capacitance component C.sub.s-R and the capacitance component C.sub.v are connected in series, and these are connected in parallel. Further, the capacitance components C.sub.r-R and C.sub.r-L are connected in parallel to these signal paths (first signal path, second signal path), respectively. Here, note that in the figure, circuit connection lines indicated by solid lines represent connections through the Si layer 53 which is an active layer, and circuit connection lines indicated by dotted lines represent connections through the Si layer 51 which is a support layer.

[0059] A read signal input from the read signal input pad 28 is input in parallel to each capacitance component C.sub.s-L, C.sub.s-R, C.sub.r-R, and C.sub.r-L via the Si layer 51, which is a support layer. The read signal passing through each capacitance component C.sub.r-R and C.sub.r-L reaches the GND potential as it is, but the read signal passing through each capacitance component C.sub.s-L and C.sub.s-R reaches the GND potential via each capacitance component C.sub.d and C.sub.v.

[0060] From the dummy detection pad 23, a voltage signal V.sub.out1 which is divided by the capacitance component C.sub.s-L and the capacitance component C.sub.d, is obtained. From the detection pad 22, a voltage signal V.sub.out2 which is divided by the capacitance component C.sub.s-R and the capacitance component C.sub.v, is obtained. Therefore, by obtaining the difference between these voltage signals V.sub.out1 and V.sub.out2, it is possible to obtain a signal in which a common in-phase noise components are canceled. Thus, this improves the accuracy of deflection angle detection. Further, since there is no need to add a new layer as a support layer (foundation), cost increase can be suppressed.

[0061] FIG. 9A is a waveform diagram showing an example of the read signal, FIG. 9B is a waveform diagram showing an example of the voltage signal V.sub.out1, FIG. 9C is a waveform diagram showing an example of the voltage signal V.sub.out2, and FIG. 9D is an enlarged waveform diagram showing an example of a differential signal between voltage signals V.sub.out1 and V.sub.out2. Here, when defining a read signal which is an input voltage at a certain time t as V.sub.in(t), noise as N(t), and a differential signal between the voltage signals V.sub.out1(t) and V.sub.out2 (t) as v (t), these parameters can be expressed as follows.

[00001]$V_{\mathrm{out}1}\left(t\right)=V_{in}\left(t\right)+N\left(t\right)$$V_{\mathrm{out}2}\left(t\right)=V_{in}\left(t\right)+v\left(t\right)+N\left(t\right)$$V_{\mathrm{out}2}\left(t\right)-V_{\mathrm{out}1}\left(t\right)=v\left(t\right)$

[0062] When the deflection angle detection section 20 is at the initial position, the capacitance component C.sub.v and the capacitance component C.sub.d are approximately equal and the equivalent circuit is symmetrical, therefore, the voltage signal V.sub.out1 and the voltage signal V.sub.out2 are theoretically equal. Considering a case where the deflection angle detection section 20 operates and the capacitance component C.sub.v decreases, that is, a case where the impedance increases, the voltage signal V.sub.out2 increases relative to the voltage signal V.sub.out1 based on Voltage Division Rule. The opposite phenomenon occurs when the capacitance component C.sub.v increases. Therefore, by obtaining the difference between the voltage signal V.sub.out1 and the voltage signal V.sub.out2, the common noise component is canceled out, and the change in voltage due to the deflection angle detection section 20 can be detected. In detail, as shown in FIG. 9D, since the capacitance component C.sub.v changes according to the frequency of the outer piezoelectric actuator 6, which is a non-resonant driving section, the impedance also changes periodically, and accordingly, the voltage signal V.sub.out2 also changes periodically. Since there are two points where the capacitance is maximum per period, the fluctuation cycle 90 of the differential signal is twice the driving frequency. Further, a change amount 91 of the differential signal corresponds to a change amount of the deflection angle.

[0063] FIGS. 10A to 10G and FIGS. 11A to 11F are process diagrams showing an example of a method for manufacturing the optical scanning apparatus. Hereinafter, an example of a method for manufacturing the optical scanning apparatus 1 will be briefly described with reference to each figure.

[0064] First, a substrate in which the SiO.sub.2 layer 50, the Si layer 51, the SiO.sub.2 layer 52, the Si layer 53, and the SiO.sub.2 layer 54 are stacked is prepared (FIG. 10A), and a Pt layer 55 is formed on one side of the SiO.sub.2 layer 54 (the side not in contact with the Si layer 53) (FIG. 10B). Next, a PZT layer 56 is formed on one side of the Pt layer 55 (the side not in contact with the SiO.sub.2 layer 54) (FIG. 10C), and further, a Pt layer 57 is formed on one side of the PZT layer 56 (the side not in contact with the Pt layer 55) (FIG. 10D). Here, note that any known method may be used for the film formation method.

[0065] Next, the Pt layer 57 and the PZT layer 56 are patterned into a predetermined shape (FIG. 10E). Here, any known method may be used for this patterning. As an example, in the present embodiment, a method is used in which a mask pattern is formed using a resist film (photoresist film), etching is performed, and then the resist film is peeled off (the same applies to the patterning in each subsequent step).

[0066] Next, the Pt layer 55 is patterned into a predetermined shape (FIG. 10F), and then the SiO.sub.2 layer 54 is patterned into a predetermined shape (FIG. 10G). Further, the Si layer 53 is patterned into a predetermined shape (FIG. 11A), and then the SiO.sub.2 layer 52 is patterned into a predetermined shape (FIG. 11B).

[0067] Next, the SiO.sub.2 layer 50 on the back surface side is patterned into a predetermined shape (FIG. 11C). Then the Si layer 51 is patterned into a predetermined shape (FIG. 11D), and the rib portion 60 is further formed (FIG. 11E). Thereafter, the SiO.sub.2 layer 52 is patterned into a predetermined shape (FIG. 11F). Through the above steps, the optical scanning apparatus 1 according to the embodiment described above is completed.

[0068] According to the first embodiment as described above, it is possible to reduce noise of the signal used to detect the deflection angle of the movable mirror.

[0069] The optical scanning apparatus 1 according to the first embodiment described above can be applied to any electronic equipment that requires laser beam scanning. For example, it can be applied to pico-projectors used in head-up displays and wearable devices. Further, the present disclosure can be applied to an apparatus that changes the light distribution pattern depending on the presence of an oncoming vehicle, a preceding vehicle, a pedestrian, or various objects when irradiating light toward the front of an own vehicle. Alternatively, the present disclosure can be applied to an object detection apparatus such as LiDAR (Light Detection And Ranging). Further, the present disclosure can be applied to various MEMS sensors such as an acceleration sensor, an angular velocity sensor, a pressure sensors, or a myoelectric sensor.

Second Embodiment

[0070] FIG. 12 is a plane view from the back side of an optical scanning apparatus according to a second embodiment. Further, FIGS. 13 and 14 are partial enlarged views of the optical scanning apparatus shown in FIG. 12, respectively. Here, note that the overall configuration of the optical scanning apparatus 1a according to the second embodiment is the same as the optical scanning apparatus 1 according to the first embodiment described above, and only the structure of the Si layer 51 which is a support layer is different. Hereinafter, regarding the optical scanning apparatus 1a according to the second embodiment, the description of common features with the optical scanning apparatus 1 of the first embodiment will be omitted, and the structure of the Si layer 51 which is different, will be described in detail.

[0071] As shown in the figure, the Si layer 51 of the optical scanning apparatus 1a is provided with a plurality of through holes 80 in a region overlapping with the Si layer 53 (that is, a portion related to the generation of parasitic capacitance), where the Si layer 53 which is an active layer that comprises capacitance component C.sub.s-L and capacitance component C.sub.s-R that are capacitance components corresponding to the formation regions of fixed electrodes 20a, 21a, etc. In the illustrated example, the through holes 80 are arranged in rows in the horizontal and vertical directions in the figure, but the arrangement of the through holes 80 is not limited thereto. The region where each through hole 80 is arranged corresponds to the above-described portions 73 and 74 (refer to FIG. 6). Further, a plurality of through holes 81 are similarly provided in the portions 71 and 72 described above, that is, in the regions where the driving pad 15 and the driving GND pad 16 are formed. With regard to the size of each of the through holes 80 and 81, for example, when each is approximately square as shown in the figure, one side thereof can be approximately 50 ?m to 150 ?m.

[0072] FIGS. 15A and 15B are partial cross-sectional views of the optical scanning apparatus of the second embodiment. FIG. 15A is a cross-sectional view taken along line a-a shown in FIG. 13, and FIG. 15B is a cross-sectional view taken along line b-b shown in FIG. 13. As shown in FIG. 15A, the through hole 80 is formed by partially removing the Si layer 51 which is a support layer, to reach the SiO.sub.2 layer (BOX layer) 52. On the other hand, as shown in FIG. 15B, at the portion where the through hole 80 does not exist, the Si layer 51 which is a support layer is not removed, and the SiO.sub.2 layer (BOX layer) 52 is not exposed. Here, although not shown, each through hole 81 has a similar structure as the through hole 80. These through holes 80 and 81 can be formed during the process of etching the Si layer 51 (refer to FIG. 11E) in the manufacturing process of the optical scanning apparatus 1 described in the first embodiment. Since the Si layer 51 which is a support layer also has a role of ensuring mechanical strength of the optical scanning apparatus 1a, by only partially removing the layer to form the through holes 80 and 81, a decrease in mechanical strength can be prevented.

[0073] By providing each through hole 80, it is possible to reduce the overlapping area between the Si layer 51 which is a support layer, and the Si layer 53 which is an active layer. Thereby, the values of the capacitance component C.sub.s-L and the capacitance component C.sub.s-R, which are parasitic capacitance, can be reduced. This reduces the difference between the capacitance component C.sub.v which is the capacitance component to be detected and the capacitance component C.sub.s-R. Thereby, the voltage change due to the deflection angle detection section 20 can be made greater.

[0074] In detail, it is difficult to increase the value of the capacitance component C.sub.v which is the capacitance component to be detected because the electrodes are formed in a direction perpendicular to the support layer or the like. On the other hand, since the parasitic capacitance caused by the overlap between the Si layer 53 which is an active layer and the Si layer 51 which is a support layer is formed in a direction parallel to the support layer, etc., its value tends to increase. When through holes 80 are not provided, the capacitance component C.sub.v is, for example, about 1 pF, whereas the capacitance component C.sub.s-R may be about several tens of pF. In principle, when the ratio of the capacitance component C.sub.v to the capacitance component C.sub.s-R (C.sub.s-R/C.sub.v) is around 1, amount of voltage change due to the deflection angle detection section 20 reaches its maximum value. As the capacitance component C.sub.s-R decreases, the value of C.sub.s-R/C.sub.v approaches 1, thereby the amount of voltage change can be made greater.

Modification Example

[0075] Here, note that the present disclosure is not limited to the contents of the embodiments described above, and can be implemented with various modifications within the scope of the gist of the present disclosure. For example, the resonant driving section in each of the embodiments described above may be used in a non-resonant drive mode, or the non-resonance driving section may be used in a resonant drive mode. Further, in each of the above-described embodiments, cases where a piezoelectric drive type actuator is used have been exemplified, but an antistatic drive type or an electromagnetic drive type actuator may be used. Further, although the capacitance component of the dummy detection section is formed by a comb teeth electrode, it may be formed by a parallel plate electrode. Further, in each of the embodiments described above, two read signal input pads have been provided, but one or three or more pads may be provided instead. Further, the read signal may be applied from the opposite side (movable electrode side). Further, although the shape of each of the through holes 80 and 81 in a plane view is shown as a substantially square shape as one example, it is not limited thereto, and can be formed in various shapes in a plane view, such as a circular, a triangular, or a hexagonal shape. Furthermore, the through holes 80 and 81 do not all have to be the same shape in a plane view, and may include different shapes in a plane view.

REFERENCE SIGNS LIST

[0076] 1: Optical scanning apparatus [0077] 2: Reflecting section (Movable mirror) [0078] 3: Torsion bar [0079] 4: Inner piezoelectric actuator [0080] 5: Inner frame section [0081] 6: Outer piezoelectric actuator [0082] 7: Outer frame section (frame) [0083] 13: Piezoelectric Cantilever [0084] 15: Driving pad [0085] 16: Driving GND pad [0086] 17: Groove [0087] 20: Deflection angle detection section [0088] 20a: Fixed electrode [0089] 20b: Movable electrode [0090] 20c, 20d: Comb teeth electrode [0091] 21: Dummy comb teeth structure section [0092] 21a: Fixed electrode [0093] 21b: Movable electrode [0094] 22: Detection pad [0095] 22a: Comb teeth electrode [0096] 23: Dummy detection pad [0097] 23a: Comb teeth electrode [0098] 24: Detection GND pad [0099] 24a: Dummy electrode branch [0100] 25: Detection GND pad [0101] 25a: Comb teeth electrode [0102] 26: Comb teeth structure section [0103] 27: Dummy detection section [0104] 28, 29: Read signal input pad [0105] 50: SiO.sub.2 layer [0106] 51: Si layer [0107] 52: SiO.sub.2 layer (Box layer) [0108] 53: Si layer [0109] 54: SiO.sub.2 layer [0110] 55: Pt layer [0111] 56: PZT (lead zirconate titanate) layer [0112] 57: Pt layer [0113] 80, 81: Through hole