SHEET RESISTANCE COMPONENT

Abstract

The present invention relates to active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, whereinat least a first OLED pixel and a second OLED pixel comprisingan anode layer, a common cathode layer, at least one emission layer, which is optional a common emission layer, at least a stack of organic layers, wherein the stack of organic layers is arranged between the anode layer and cathode layer.

Claims

1.-25. (canceled)

26. An active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, wherein at least a first OLED pixel and a second OLED pixel comprising an anode layer, a common cathode layer, at least one emission layer, which is optional a common emission layer, at least a stack of organic layers, wherein the stack of organic layers is arranged between the anode layer and cathode layer, comprising a plurality of semiconductor layers, and the plurality of semiconductor layers comprising at least two or more common semiconductor layers, and wherein the common first semiconductor layer extends over all pixels of the plurality of pixels or extends over at least two pixels of the plurality of pixels in the OLED display, wherein the plurality of semiconductor layers comprising at least a common first semiconductor layer comprises or consist of at least one hole injection metal compound, at least a common second semiconductor layer, and wherein the common first semiconductor layer comprises at least one hole injection metal compound and the common second semiconductor layer have together a sheet resistance of ?50 giga ohms per square.

27. The active-matrix OLED display according to claim 26, wherein the at least one common first semiconductor layer is a common hole injection layer.

28. The active-matrix OLED display according to claim 27, wherein the common hole injection layer, comprises at least one hole injection metal compound.

29. The active-matrix OLED display according to claim 27, wherein the common hole injection layer, comprises at least one hole injection metal compound and at least one matrix material.

30. The active-matrix OLED display according to claim 26, wherein the hole injection metal compound comprises at least one ligand, wherein the ligand is represented by formula (I): ##STR00060## m, n, p, and q are independently selected from 0 or 1; r, s, t, and u are independently selected from 0 or 1; at least one of r, s, t, and u is 1; Z is selected from CR.sup.1, O, N, B; if Z is selected O then n, p and are selected from 0 and s, t and u are selected from 0; A.sup.1, A.sup.2, A.sup.3 and A.sup.4 are independently selected from C?O, CO, C?NR.sup.2, CNR.sup.3, SO, SO.sub.2, or P(?O)R.sup.4; R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from H, D, electron-withdrawing group, halogen, substituted or unsubstituted aryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted heterocyclyl, F, Cl, CN, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein two of A.sup.1, A.sup.2, A.sup.3 and A.sup.4 together optional form a substituted or unsubstituted cycle with Z, wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from H, D, electron-withdrawing group, halogen, substituted or unsubstituted aryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted heterocyclyl, F, Cl, CN, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl, wherein the substituents on R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein at least one of R.sup.a, R.sup.b, R.sup.c and R.sup.d is selected from substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted heterocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein two of R.sup.a, R.sup.b, R.sup.c and R.sup.d can independently from each other form a cycle with Z, wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; wherein the ligand is a mono-anionic ligand.

31. The active-matrix OLED display according to claim 26, wherein Z is selected from CR.sup.1, O, N, B.

32. The active-matrix OLED display according to claim 26, wherein A.sup.1, A.sup.2, A.sup.3 and A.sup.4 are independently selected from C?O, CO, SO, or SO.sub.2.

33. The active-matrix OLED display according to claim 26, wherein if R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently or same selected from aryl, alkyl or carbocyclyl at least one of the aryl, alkyl, carbocyclyl, heterocyclyl or heteroaryl is substituted.

34. The active-matrix OLED display according to claim 26, wherein if R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently or same selected from aryl, alkyl, carbocyclyl, heterocyclyl or heteroaryl at least one of the aryl, alkyl, carbocyclyl, heterocyclyl or heteroaryl is substituted.

35. The active-matrix OLED display according to claim 26, wherein at least one R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, Cl, CN, CF.sub.3, substituted aryl, substituted C.sub.6 to C.sub.24 aryl, substituted C.sub.2 to C.sub.24 heteroaryl, substituted alkyl, substituted C.sub.1 to C.sub.12 alkyl, substituted carbocyclyl, substituted C.sub.3 to C.sub.24 carbocyclyl, substituted heterocyclyl, substituted C.sub.2 to C.sub.24 heterocyclyl; and the other of R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from H, D, electron-withdrawing group, halogen, F, Cl, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted heterocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl.

36. The active-matrix OLED display according to claim 26, wherein R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, Cl, CN, CF.sub.3, substituted aryl, substituted C.sub.6 to C.sub.24 aryl, substituted C.sub.2 to C.sub.24 heteroaryl, substituted alkyl, substituted C.sub.1 to C.sub.12 alkyl, substituted carbocyclyl, substituted C.sub.3 to C.sub.24 carbocyclyl, substituted heterocyclyl, substituted C.sub.2 to C.sub.24 heterocyclyl.

37. The active-matrix OLED display according to claim 26, wherein at least one of R.sup.a, R.sup.b, R.sup.c and R.sup.d is selected from substituted or unsubstituted aryl and substituted or unsubstituted heteroaryl, if Z is CR1 or N.

38. The active-matrix OLED display according to claim 26, wherein hole injection metal compound comprises at least one ligand, wherein the ligand is represented by formula (I): ##STR00061## wherein m is 1, n is selected from 0 or 1, q is 0 and p is 0; r is 1, s is selected from 0 or 1, t is 0 and u is 0; Z is selected from CR.sup.1, 0, N; if Z is 0 then n is 0 and s is 0; wherein A.sup.1 and A.sup.2 are independently selected from C?O, CO, SO.sub.2, R.sup.1 is independently selected from H, D, electron-withdrawing group, halogen, substituted or unsubstituted aryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted heterocyclyl, H, D, F, Cl, CN, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.1 is independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein two of A.sup.1 and A.sup.2 together optional independently from each other form a substituted or unsubstituted cycle with Z; wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; wherein R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from H, D, electron-withdrawing group, halogen, substituted or unsubstituted aryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted heterocyclyl, H, D, F, Cl, CN, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein at least one of R.sup.a and R.sup.b is selected from substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted heterocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.a and R.sup.b are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein two of R.sup.a and R.sup.b are optional independently selected form a cycle with Z, wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; and wherein the ligand is a mono-anionic ligand.

39. The active-matrix OLED display according to claim 26, wherein the hole injection metal compound comprises at least one ligand, wherein the ligand is represented by formula (I): ##STR00062## wherein m is 1, n is selected from 1, q is 0 and p is 0; r is 1, s is 1; Z is selected from CR.sup.1, or N; A.sup.1 and A.sup.2 are independently selected from C?O, CO, SO.sub.2, R.sup.1 is independently selected from H, D, electron-withdrawing group, halogen, substituted or unsubstituted aryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted heterocyclyl, H, D, F, Cl, CN, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.1 are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein two of A.sup.1 and A.sup.2 optional independently selected from each other form together a substituted or unsubstituted cycle with Z; wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; wherein R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from H, D, electron-withdrawing group, halogen, F, Cl, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted heterocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein R.sup.a and R.sup.b optional form a cycle with Z, wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; wherein the ligand is a mono-anionic ligand.

40. The active-matrix OLED display according to claim 26, wherein the hole injection metal compound comprises at least one ligand, wherein the ligand is represented by formula (I): ##STR00063## wherein m is 1, n is selected from 1, q is 0 and p is 0; r is 1, s is 1; Z is selected from CR.sup.1; A.sup.1, and A.sup.2 are independently selected from C?O, CO, SO.sub.2, R.sup.1 is independently selected from H, D, electron-withdrawing group, halogen, substituted or unsubstituted aryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted heterocyclyl, H, D, F, Cl, CN, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.1 are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein two of A.sup.1 and A.sup.2 optional independently from each other form together a substituted or unsubstituted cycle with Z; wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; wherein R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from H, D, electron-withdrawing group, halogen, F, Cl, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.1 to C.sub.12 alkyl, substituted or unsubstituted carbocyclyl, substituted or unsubstituted C.sub.3 to C.sub.24 carbocyclyl, substituted or unsubstituted heterocyclyl, substituted or unsubstituted C.sub.2 to C.sub.24 heterocyclyl; wherein the substituents on R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently selected from electron-withdrawing group, halogen, F, CN, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; wherein R.sup.a and R.sup.b optional form a cycle with Z, wherein the substituent on the cycle is independently selected from H, D, electron-withdrawing group, CN, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted carbocyclyl, or substituted or unsubstituted heterocyclyl; wherein the ligand is a mono-anionic ligand.

41. The active-matrix OLED display according to claim 26, wherein the hole injection metal compound is selected from the group comprising compounds E1 to E21: ##STR00064## ##STR00065## ##STR00066## ##STR00067##

42. The active-matrix OLED display to claim 26, wherein the common second semiconductor layer is selected from the group comprising a common hole transport layer or a common electron blocking layer, wherein the common first semiconductor layer is a common hole injection layer and is in direct contact with the common second semiconductor layer that is selected from the group comprising a common hole transport layer or a common electron blocking layer.

43. The active-matrix OLED display according to claim 26, wherein the sheet resistance is determined by transmission line method.

44. The active-matrix OLED display according to claim 26, wherein the anode layer of the first OLED pixel and the anode layer of the second OLED pixel are separated by a pixel definition layer, so that the anode layer of the first OLED pixel and the anode layer of the second OLED pixel are not formed as a common layer and do not contact each other.

45. The active-matrix OLED display according to claim 44, wherein the anode layer of the plurality of OLED pixel are not formed as a common layer and do not contact each other.

46. The active-matrix OLED display according to claim 44, wherein every individual pixel have its own anode that does not touch anodes of other individual pixels.

47. The active-matrix OLED display according to claim 26, wherein the common first hole injection layer, the common second semiconductor layer, the common third semiconductor layer, and the common emission layer have together a sheet resistance of ?50 giga ohms per square.

48. The active-matrix OLED display according to claim 26, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, wherein at least a first OLED pixel and a second OLED pixel comprising each an anode layer, wherein the anode layer of the first OLED pixel and the second OLED pixel are optional separated by a pixel definition layer, and wherein the at least first OLED pixel and the at least second OLED pixel comprising a common cathode layer and at least one stack of organic layers, comprising a plurality of semiconductor layers, and the plurality of semiconductor layers comprising at least two or more common semiconductor layers, wherein the common stack of organic layers is arranged between the common cathode layer and the anode layer, and wherein the plurality of common semiconductor layers comprising at least a common first semiconductor layer comprises at least one hole injection metal compound, and at least a common second semiconductor layer, wherein the common first semiconductor layer is at least partly arranged in direct contact to the anode layer and the common second semiconductor layer is arranged between the emission layer; and wherein the common first semiconductor layer comprises at least one hole injection metal compound, and wherein the common first semiconductor layer and the common second semiconductor layer have together a sheet resistance of ?50 giga ohms per square.

49. The active-matrix OLED display according to claim 26, wherein the hole injection metal compound is selected from a compound that comprises at least one metal cation and at least one ligand, wherein the at least one ligand is at least one anionic ligand, at least one ligand of a mono-anionic ligand, at least one ligand of a mono-anionic ligand that contains additionally a neutral ligand.

50. The active-matrix OLED display according to claim 26, wherein the hole injection metal compound comprises at least one ligand comprises ?5 covalently bound atoms, at least one ligand comprises ?2 carbon atoms or at least one anionic ligand comprises ?5 covalently bound atoms.

51. The active-matrix OLED display according to claim 26, wherein the at least one anionic ligand of the hole injection metal compound has a HOMO energy level higher than or equal to the Fermi energy level of the anode layer and less than ?0.7 eV, wherein the HOMO energy level of the anionic ligand in its neutral radical form is less than ?5.8 eV, and wherein the LUMO energy level of the anionic ligand in its neutral radical form is less than ?3.90 eV, wherein the LUMO energy level and the HOMO energy level is expressed in the absolute scale referring to vacuum energy level being zero calculated using the hybrid functional B3LYP with a Gaussian 6-31G* basis set as implemented in the program package TURBOMOLE V6.5.

52. The active-matrix OLED display according to claim 26, wherein the common first semiconductor layer and the common second semiconductor layer have together a sheet resistance selected from ?100 giga ohms per square.

53. The active-matrix OLED display according to claim 26, wherein at least one anode layer comprises a first anode sub-layer and a second anode sub-layer, wherein the first anode sub-layer comprises a first metal having a work function in the range of ?4 and ?6 eV, and the second anode sub-layer comprises a transparent conductive oxide; and the second anode sub-layer is arranged closer to the common hole injection layer.

54. The active-matrix OLED display according to claim 26, wherein the active-matrix OLED display comprises a driving circuit configured to separately driving the pixels of the plurality of organic-light emitting diode pixels.

55. The active-matrix OLED display according to claim 26, wherein the layer selected from the group comprising the common first semiconductor layer is shared by the plurality of OLED pixels, the common second semiconductor layer is shared by the plurality of OLED pixels, or all common semiconductor layers are shared by the plurality of OLED pixels.

56. Method for manufacture at least one common layer according to claim 26, wherein each common layer is deposited onto the complete display area through one large mask opening in one processing step.

Description

DESCRIPTION OF THE DRAWINGS

[0525] The aforementioned components, as well as the claimed components and the components to be used in accordance with the invention in the described embodiments, are not subject to any special exceptions with respect to their size, shape, material selection and technical concept such that the selection criteria known in the pertinent field can be applied without limitations.

[0526] Additional details, characteristics and advantages of the object of the invention are disclosed in the dependent claims and the following description of the respective figures which in an exemplary fashion show preferred embodiment according to the invention. Any embodiment does not necessarily represent the full scope of the invention, however, and reference is made therefore to the claims and herein for interpreting the scope of the invention. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation as claimed.

FIGS. 1 to 9

[0527] FIG. 1 is a schematic sectional view of a display with two pixels and a common HIL, a common HTL and a common cathode layer;

[0528] FIG. 2 is a schematic sectional view of a test element;

[0529] FIG. 3 is a schematic sectional view of deposited layer stack.

[0530] FIG. 4 is a schematic sectional view of a test element;

[0531] FIG. 5 shows an ITO coated substrate;

[0532] FIG. 6 is a diagram of a current-voltage measurement;

[0533] FIG. 7 is an exemplary diagram of resistances;

[0534] FIG. 8 is a schematic sectional view of an organic light-emitting diode;

[0535] FIG. 9 is a schematic sectional view of an organic light-emitting diode.

[0536] Hereinafter, the FIGS. 1 to 4 are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following figures.

[0537] Herein, when a first element is referred to as being formed or disposed on or onto a second element, the first element can be disposed directly on the second element, or one or more other elements may be disposed there between. When a first element is referred to as being formed or disposed directly on or directly onto a second element, no other elements are disposed there between.

[0538] FIG. 1 is a schematic sectional view of a display with two pixels (100; 200), according to an exemplary embodiment. The first pixel (100) comprises an anode layer (120) and the second pixel comprises an anode layer (120). The first pixel (100) has its own anode layer (120) and the second pixel (200) has its own anode (120), wherein the anode (120) of the first pixel (100) does not touch the anode layer (120) of the other second pixels (200). Between anode (120) of the first pixel (100) and the anode (120) of the second pixel (200) a pixel definition layer (125) may be arranged. A common hole injection layer (HIL) (130) is disposed on the anode layers (120) extending from the first pixel (100) to the second pixel (200). Onto the common HIL (130) a common hole transport layer (HTL) (140) is disposed extending from the first pixel (100) to the second pixel (200). Onto the hole transport layer (HTL) (140), an electron blocking layer (EBL) (145) is disposed such that the first pixel (100) has its own electron blocking layer (EBL) (145) and the second pixel (200) has its own electron blocking layer (EBL) (145), the electron blocking layer (EBL) (145) of the first pixel (100) can touch the electron blocking layer (EBL) (145) of the other second pixels (200). Onto the electron blocking layer (EBL) (145), a light emitting layer (EML) (150) is disposed such that the first pixel (100) has its own light emitting layer (EML) (150) and the second pixel (200) has its own light emitting layer (EML) (150), wherein the light emitting layer (EML) (150) of the first pixel (100) can touch the light emitting layer (EML) (150) of the other second pixels (200). Onto the light emitting layer (EML) (150), an electron transport layer (ETL) (160) is disposed such that the first pixel (100) has its own electron transport layer (ETL) (160) and the second pixel (200) has its own electron transport layer (ETL) (160). Onto the electron transport layer (ETL) (160), a common cathode layer (190) is disposed extending from the first pixel (100) to the second pixel (200). Between the first pixel (100) and the second pixel (200) a separation section (300) is arranged that has no anode layer (120) but a pixel definition layer (125) function as a sheet resistance layer, which is not an anode (120).

[0539] As can be seen in FIG. 1 the separation section (300) comprises at least one layer, which is a common hole injection layer (HIL) (130) and extends as a common layer from pixel (100) through the separation section (300) to pixel (200). The separation section (300) comprises at least two layers that are an electron blocking layer (EBL) (145) and a light emitting layer (EML) (150), which each extends from the pixel (100) and pixel (200) into the separation section (300). The electron transport layer (ETL) (160) and the hole transport layer (HTL) (140) of the separation section (300), do not extend into the pixel (100) and pixel (200).

[0540] FIG. 1 is an example only and the present invention is not restricted to this embodiment. There are a plurality of layer configuration possible in which a layer for example extends from one pixel into the separation section (300) or not. Further the material composition of each non common layer of the plurality of pixels and separation sections, such as pixel (100), (200) and the separation section (300), can be selected individually different and or same.

[0541] FIG. 2 shows the test element comprising 2 highly conductive electrodes with a gap I between the 2 highly conductive electrodes and a width w for the respective highly conductive electrodes.

[0542] FIG. 3 shows schematic representation of a deposited layer stack on a test element group for determining the sheet resistance. The test element consists of a channel (test element). The deposition layer (300) lies on top of the electrode.

[0543] FIG. 4 shows the test element comprising 2 highly conductive electrodes with interdigitated finger pattern with a gap 1 between electrode fingers and total width w as product of interdigitation width we and number of interdigitation areas.

[0544] FIG. 5 shows an ITO coated substrate with 90 nm ITO with 10 Ohm/sq sheet resistance patterned with electrode pairs with 4 different channel lengths combined on one substrate with 25?25 mm.sup.2 dimension.

[0545] FIG. 6 shows an exemplary diagram of a current-voltage measurement on a substrate shown in FIG. 5.

[0546] FIG. 7 shows an exemplary diagram of resistances derived from current-voltage measurement displayed in FIG. 6 plotted over corresponding channel length and calculation of slope thereof.

[0547] FIG. 8 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention. The OLED 100 includes a substrate (110), an anode layer (120) that comprises a first anode sub-layer (121) and a second anode sub-layer (122), a semiconductor layer comprising compound of Formula (I) (130), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emission layer (EML) (150), a hole blocking layer (EBL) (155), an electron transport layer (ETL) (160) and a cathode layer (190). The layers are disposed exactly in the order as mentioned before.

[0548] FIG. 9 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention. The OLED 100 includes a substrate (110), an anode layer (120) that comprises a first anode sub-layer (121), a second anode sub-layer (122) and a third anode sub-layer (123), a semiconductor layer comprising compound of Formula (I) (130), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emission layer (EML) (150), a hole blocking layer (EBL) (155), an electron transport layer (ETL) (160) and a cathode layer (190). The layers are disposed exactly in the order as mentioned before.

[0549] Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples.

DETAILED DESCRIPTION

[0550] The invention is furthermore illustrated by the following examples which are illustrative only and non-binding.

[0551] The compound may be prepared as described in the literature or alternative compounds may be prepared following similar compounds as described in the literature.

Calculated HOMO and LUMO

[0552] The HOMO and LUMO are calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). The optimized geometries and the HOMO and LUMO energy levels of the molecular structures are determined by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase. If more than one conformation is viable, the conformation with the lowest total energy is selected. The HOMO and LUMO levels are recorded in electron volt (eV).

Transmission Line Method Described in More Detail

[0553] According the present invention the transmission line method for measuring the sheet resistance the first common semiconductor layer comprising the organic p-dopant and the second common semiconductor layer on the first common semiconductor can be carried out as described below.

Substrate and Sample Preparation

[0554] ITO coated substrates with 90 nm ITO with 10 Ohm/sq sheet resistance were patterned with interdigitated finger structure according to FIG. 4. 12 ITO fingers on both electrodes form a total of 23 conductive areas: n=23. Interdigitation length w.sub.e was 4.5 mm. Thus total channel width was 103.5 mm. Channel length w was varied between 20 and 80 ?m in 20 ?m steps. Electrode pairs with 4 different channel lengths were combined on one substrate with 25?25 mm.sup.2 dimension like displayed in FIG. 5. Organic layers were deposited on the substrate covering the complete interdigitated finger pattern. On the substrates a first common semiconductor layer comprises at least one hole injection metal compound with a 10 nm thickness, for example the first common semiconductor layer is a hole injection layer that consists of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, was deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at which vaporization begins and the decomposition temperature. These values are material parameters and are different for each material. The values are typically between 50? C. and 500? C., mostly between 150? C. and 350? C. For example, the covalent matrix compound deposition took place at constant rate of 1 ?/s (Angstr?m per second) with evaporation source temperature of 272? C. The hole injection metal compound was for example operated with 0.068 ?/s at 174? C. On this layer the second common semiconductor layer, which is for example a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred, with a thickness of 128 nm was deposited at a deposition rate of 2 ?/s and temperature of 280? C. Chamber pressure was 3e-7 mbar during the whole deposition process. However, as explained above, the evaporation temperatures used depend on the vaporization temperature at which vaporization begins and the decomposition temperature. Evaporation temperatures for organic materials are material dependent and usually between 50? C. and 500? C. The obtained substrate layer device were encapsulated in a Nitrogen filled glovebox using glass lids with integrated desiccant, to prevent sample degradation, after organic layer deposition.

[0555] According the present invention the transmission line method for measuring the sheet resistance the common first semiconductor layer comprising the organic p-dopant, the common second semiconductor layer on the common first semiconductor and the common third semiconductor layer on the common third semiconductor layer can be carried out as described below.

[0556] ITO coated substrates with 90 nm ITO with 10 Ohm/sq sheet resistance were patterned with interdigitated finger structure according to FIG. 4. 12 ITO fingers on both electrodes form a total of 23 conductive areas: n=23. Interdigitation length w.sub.e was 4.5 mm. Thus total channel width was 103.5 mm. Channel length w was varied between 20 and 80 ?m in 20 ?m steps. Electrode pairs with 4 different channel lengths were combined on one substrate with 25?25 mm.sup.2 dimension like displayed in FIG. 5. Organic layers were deposited on the substrate covering the complete interdigitated finger pattern. On the substrates a first common semiconductor layer comprises at least one hole injection metal compound with a 10 nm thickness, for example the first common semiconductor layer is a hole injection layer that consists of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, was deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at which vaporization begins and the decomposition temperature. These values are material parameters and are different for each material. The values are typically between 50? C. and 500? C., mostly between 150? C. and 350? C. For example, the covalent matrix compound deposition took place at constant rate of 1 ?/s (Angstr?m per second) with evaporation source temperature of 272? C. The hole injection metal compound was for example operated with 0.068 ?/s at 174? C.

[0557] On this layer the second common semiconductor layer, which is for example a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred, with a thickness of 128 nm was deposited at a deposition rate of 2 ?/s and temperature of 280? C. On this layer the third common semiconductor layer, which is for example a common electron-blocking layer, with a thickness of 5 nm was deposited at a deposition rate of 1 ?/s and temperature of 244? C. Chamber pressure was 3e-7 mbar during the whole deposition process. However, as explained above, the evaporation temperatures used depend on the vaporization temperature at which vaporization begins and the decomposition temperature. Evaporation temperatures for organic materials are material dependent and usually between 50? C. and 500? C. The obtained substrate layer device were encapsulated in a Nitrogen filled glovebox using glass lids with integrated desiccant, to prevent sample degradation, after organic layer deposition.

[0558] According the present invention the transmission line method for measuring the sheet resistance the common first semiconductor layer comprising the organic p-dopant, the common second semiconductor layer on the common first semiconductor, the common third semiconductor layer on the common second semiconductor layer, and a common light-emitting layer (EML) on the common third semiconductor layer can be carried out as described below.

[0559] ITO coated substrates with 90 nm ITO with 10 Ohm/sq sheet resistance were patterned with interdigitated finger structure according to FIG. 4. 12 ITO fingers on both electrodes form a total of 23 conductive areas: n=23. Interdigitation length w.sub.e was 4.5 mm. Thus total channel width was 103.5 mm. Channel length w was varied between 20 and 80 ?m in 20 ?m steps. Electrode pairs with 4 different channel lengths were combined on one substrate with 25?25 mm.sup.2 dimension like displayed in FIG. 5. Organic layers were deposited on the substrate covering the complete interdigitated finger pattern. On the substrates a first common semiconductor layer comprises at least one hole injection metal compound with a 10 nm thickness, for example the first common semiconductor layer is a hole injection layer that consists of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, was deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at which vaporization begins and the decomposition temperature. These values are material parameters and are different for each material. The values are typically between 50? C. and 500? C., mostly between 150? C. and 350? C. For example, the covalent matrix compound deposition took place at constant rate of 1 ?/s (Angstr?m per second) with evaporation source temperature of 272? C. The hole injection metal compound was for example operated with 0.068 ?/s at 174? C. On this layer the second common semiconductor layer, which is for example a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred, with a thickness of 128 nm was deposited at a deposition rate of 2 ?/s and temperature of 280? C. On this layer the third common semiconductor layer, which is for example a common electron-blocking layer, with a thickness of 5 nm was deposited at a deposition rate of 1 ?/s and temperature of 244? C. On this layer the emission layer, which is for example a blue emitting layer, with a thickness of 20 nm was deposited at a deposition rate of 1 ?/s and a temperature of 183? C. for the host compound and at a deposition rate of 0.03 ?/s and a temperature of 197? C. for the emitter dopant. Chamber pressure was 3e-7 mbar during the whole deposition process. However, as explained above, the evaporation temperatures used depend on the vaporization temperature at which vaporization begins and the decomposition temperature. Evaporation temperatures for organic materials are material dependent and usually between 50? C. and 500? C. The obtained substrate layer device were encapsulated in a Nitrogen filled glovebox using glass lids with integrated desiccant, to prevent sample degradation, after organic layer deposition.

General Procedure for Fabrication of OLEDs

[0560] For Examples 1 and 2 and Comparative Example 1, a glass substrate with an anode layer comprising a first anode sub-layer of 120 nm Ag, a second anode sub-layer of 8 nm ITO and a third anode sub-layer of 10 nm ITO was cut to a size of 50 mm?50 mm?0.7 mm, ultrasonically washed with water for 60 minutes and then with isopropanol for 20 minutes.

[0561] Then, substantially covalent matrix compound according to Table 1 and a hole injection metal compound according to E1 to E15 were co-deposited in vacuum on the anode layer, to form a hole injection layer (HIL). Then, the substantially covalent matrix compound according to Table 1 was vacuum deposited on the HIL, to form a HTL having a thickness of 128 nm. The formula of the substantially covalent matrix compound in the HTL was identical to the substantially covalent matrix compound used in the HIL.

[0562] Then was vacuum deposited on the HTL, to form an electron blocking layer (EBL) having a thickness of 5 nm.

[0563] Then 97 vol.-% H09 (Sun Fine Chemicals, Korea) as EML host and 3 vol.-% BD200 (Sun Fine Chemicals, Korea) as fluorescent blue emitter dopant were deposited on the EBL, to form a blue-emitting first emission layer (EML) with a thickness of 20 nm.

[0564] Then a hole blocking layer was formed with a thickness of 5 nm by depositing 2-(3-(9,9-dimethyl-9H-fluoren-2-yl)-[1,1-biphenyl]-3-yl)?4,6-diphenyl-1,3,5-triazine on the emission layer EML.

[0565] Then the electron transporting layer having a thickness of 31 nm was formed on the hole blocking layer by depositing 50 wt.-% 4-(4-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)naphthalen-1-yl)-[1,1-biphenyl]-4-carbonitrile and 50 wt.-% of LiQ.

[0566] Then the electron injection layer having a thickness of 2 nm was formed on the electron transporting layer by depositing Ytterbium at a rate of 0.01 to 1 ?/s at 10.sup.?7 mbar.

[0567] Then Ag:Mg (90:10 vol.-%) was evaporated at a rate of 0.01 to 1 ?/s at 10.sup.?7 mbar to form a cathode layer with a thickness of 100 nm on the electron injection layer.

[0568] The OLED stack is protected from ambient conditions by encapsulation of the device with a glass slide. Thereby, a cavity is formed, which includes a getter material for further protection.

[0569] To assess the performance of the inventive examples compared to the prior art, the current efficiency is measured at 20? C. The current-voltage characteristic is determined using a Keithley 2635 source measure unit, by sourcing an operating voltage U in V and measuring the current in mA flowing through the device under test. The voltage applied to the device is varied in steps of 0.1V in the range between 0V and 10V. Likewise, the luminance-voltage characteristics and CIE coordinates are determined by measuring the luminance in cd/m.sup.2 using an Instrument Systems CAS-140CT array spectrometer (calibrated by Deutsche Akkreditierungsstelle (DAkkS)) for each of the voltage values.

[0570] Lifetime LT of the device is measured at ambient conditions (20? C.) and 30 mA/cm.sup.2, using a Keithley 2400 source meter, and recorded in hours. The brightness of the device is measured using a calibrated photo diode. The lifetime LT is defined as the time till the brightness of the device is reduced to 97% of its initial value.

[0571] To determine the voltage stability over time U(100 h)-(1 h), a current density of at 30 mA/cm.sup.2 was applied to the device. The operating voltage was measured after 1 hour and after 50 hours, followed by calculation of the voltage stability for the time period of 1 hour to 50 hours.

[0572] Table 2 shows more preferred HTL matrix materials.

TABLE-US-00002 TABLE 2 HTL matrix materials [00029] F3 [00030] F2 [00031] F9 [00032] F4 [00033] F21 [00034] F19 [00035] F5 [00036] F18 [00037] F11 [00038] F6 [00039] F1 [00040] F20

[0573] Table 3 shows more preferred EBL matrix materials.

TABLE-US-00003 TABLE 3 EBL matrix materials [00041] F22 [00042] F23 [00043] F24 [00044] F25

TABLE-US-00004 TABLE 4 HIL Rs of Rs of (p-dopant HIL Rs of HIL, HTL, HIL, HTL, Voltage EQE LT97 concentration Thickness HIL + HTL and EBL EBL, EML [V] at 15 [%] at 15 at 30 Structure of HIL [wt %]) HIL (Host) [nm] HTL EBL [G?/s]** [G?/s]** [G?/s]** mA/cm mA/cm mA/cm Comp. example 1 [00045] 100 wt % 1 F3 F22 14 14 14 4.02 15.1 44 Prior art [00046] 100 wt % 10 F3 19 Inventive example 1 [00047] 13.5 wt % F3 11 F3 F22 8683 8605 8539 3.86 13.7 67 Inventive example 2 [00048] 21.8 wt % F5 11 F5 F22 15455 15446 15395 3.72 13.7 211 Inventive example 3 [00049] 20.2 wt % F3 10 F3 F25 30244 30191 29997 3.84 12.7 100 Inventive example 4 [00050] 10 wt % F3 10 F3 F25 96159 95896 95040 3.89 12.9 88 Inventive example 5 [00051] 6 wt % F2 10 F2 F22 115 114 113 3.73 12.2 154 Inventive example 6 [00052] 100 wt % 1.1 F3 F22 264 262 261 3.86 13.1 189 Inventive example 7 [00053] 7.8 wt % F18 11 F18 F22 163 162 161 3.88 14.8 55 Inventive example 8 [00054] 2.99 wt % F3 11 F3 F22 143 142 142 3.82 15.0 58 Inventive example 9 [00055] 10 wt % F3 10 F3 F22 13910 13828 13718 3.90 14.2 137 Inventive example 10 [00056] 15 wt % F3 10 F3 F22 11861 11569 11391 3.89 14.2 130 Inventive example 11 [00057] 5 wt % F3 10 F3 F22 9823 9541 9260 3.96 15.1 144 Inventive example 12 [00058] 10 wt % F3 10 F3 F22 728 719 701 3.91 15.2 78 Inventive example 13 [00059] 15 wt % F3 10 F3 F22 202 197 194 3.90 15.2 80

Technical Effect of the Invention

[0574] As can be seen from table 4 that the device has a beneficial operational voltage since the operational voltage is low and at the same time the sheet resistance is high or higher as 50 giga ohms per square. Moreover, in addition to the operational voltage the EQE and/or the lifetime is improved.

[0575] The particular combinations of elements and features in the above detailed embodiments are exemplary only; the interchanging and substitution of these teachings with other teachings in this and the patents/applications incorporated by reference are also expressly contemplated. As those skilled in the art will recognize, variations, modifications, and other implementations of what is described herein can occur to those of ordinary skill in the art without departing from the spirit and the scope of the invention as claimed. Accordingly, the foregoing description is by way of example only and is not intended as limiting. In the claims, the word comprising does not exclude other elements or steps, and the indefinite article a or an does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage. The invention's scope is defined in the following claims and the equivalents thereto. Furthermore, reference signs used in the description and claims do not limit the scope of the invention as claimed.