CHARGED PARTICLE BEAM DEVICE AND METHOD FOR DEMAGNETIZING MAGNETIC LENS
20240274395 ยท 2024-08-15
Inventors
Cpc classification
H01F13/006
ELECTRICITY
H01J37/09
ELECTRICITY
International classification
Abstract
In order to demagnetize the magnetic lens, an alternating attenuation current is applied as an excitation current, the alternating attenuation current oscillating such that a current value alternately becomes a first-polarity current I.sub.1(n) and a second-polarity current I.sub.2(n) in which n represents the number of times of amplitude variation. The first-polarity current I.sub.1(n) and the second-polarity current I.sub.2(n) are expressed as I.sub.1(n)=A??.sub.1(n), I.sub.2(n)=?A????.sub.2(n), in which oscillation of the alternating attenuation current is started from a first polarity, A represents an amplitude of the first-polarity current, ? represents an asymmetric coefficient, ?.sub.1(n) represents an attenuation function of the first-polarity current, and ?.sub.2(n) represents an attenuation function of the second-polarity current. The amplitude A of the first-polarity current is smaller than that of a saturation current of the magnetic lens, ?.sub.1(1)=?.sub.2(1)=1, and 0<?<1.
Claims
1. A charged particle beam device comprising: a magnetic lens; a magnetic lens controller configured to apply an excitation current to the magnetic lens; and a control unit, wherein the control unit applies, as the excitation current, an alternating attenuation current to demagnetize the magnetic lens, the alternating attenuation current oscillating such that a current value alternately becomes a first-polarity current I.sub.1(n) and a second-polarity current I.sub.2(n) in which n represents the number of times of amplitude variation, the first-polarity current I.sub.1(n) and the second-polarity current I.sub.2(n) are expressed as
2. The charged particle beam device according to claim 1, wherein the alternating attenuation current has a current value that alternately becomes the first-polarity current I.sub.1(n) and the second-polarity current I.sub.2(n) at a predetermined time interval.
3. The charged particle beam device according to claim 1, wherein the asymmetric coefficient ? is set based on sharpness of an observation image obtained after the application of the alternating attenuation current to the magnetic lens.
4. The charged particle beam device according to claim 1, wherein the attenuation function of the first-polarity current and the attenuation function of the second-polarity current are expressed as
?.sub.1(n)=?.sub.1(n,?)
?.sub.2(n)=?.sub.2(n,?) in which ? represents an attenuation constant, and the attenuation functions are any one of a linear function, an exponential function, or a power attenuation function.
5. The charged particle beam device according to claim 4, wherein the attenuation constant ? is set such that a beam shape of a charged particle beam after the application of the alternating attenuation current to the magnetic lens is a perfect circle.
6. The charged particle beam device according to claim 5, wherein the asymmetric coefficient ? is set based on sharpness of an observation image obtained after the application of the alternating attenuation current whose attenuation constant ? is temporarily determined to the magnetic lens, and the attenuation constant ? is set such that the beam shape of the charged particle beam after the application of the alternating attenuation current whose asymmetric coefficient ? is set to the magnetic lens is a perfect circle.
7. The charged particle beam device according to claim 6, wherein the control unit includes a storage device configured to store the set asymmetric coefficient ?, the set attenuation constant ?, the set attenuation function ?.sub.1(n, ?) of the first-polarity current, and the set attenuation function ?.sub.2(n, ?) of the second-polarity current.
8. The charged particle beam device according to claim 1, wherein the attenuation function ?.sub.1(n) of the first-polarity current is equal to the attenuation function ?.sub.2(n) of the second-polarity current.
9. The charged particle beam device according to claim 1, wherein the magnetic lens is a multipole lens, and the control unit applies the alternating attenuation current to a pole, in the multipole lens, which generates a quadrupole field, an oblique quadrupole field, or a pole field obtained by superimposing a quadrupole field and an oblique quadrupole field.
10. A method for demagnetizing a magnetic lens, the method comprising: applying, as an excitation current, an alternating attenuation current to demagnetize the magnetic lens, the alternating attenuation current oscillating such that a current value alternately becomes a first-polarity current I.sub.1(n) and a second-polarity current I.sub.2(n) in which n represents the number of times of amplitude variation, wherein the first-polarity current I.sub.1(n) and the second-polarity current I.sub.2(n) are expressed as
Description
BRIEF DESCRIPTION OF DRAWINGS
[0014]
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DESCRIPTION OF EMBODIMENTS
[0028] An outline of a scanning electron microscope will be described with reference to
[0029] The emitted primary electrons are focused by a first condenser lens 106 whose excitation current is controlled by a first condenser lens control unit 105. The primary electrons focused by the first condenser lens 106 are limited to having a predetermined current amount at an opening of an objective movable aperture 107. The primary electrons passed through the objective movable aperture 107 are focused at an appropriate position on an optical axis 110 by a second condenser lens 109 whose excitation current is controlled by a second condenser lens control unit 108. The primary electrons focused by the second condenser lens 109 are focused on a sample 114 disposed on a stage 113 by an objective lens 112 whose excitation current is controlled by an objective lens control unit 111. The excitation current of the objective lens 112 is set based on a working distance measured by a sample height measuring instrument 116 controlled by a stage control unit 115.
[0030] A returning power supply 118 controlled by a returning voltage control unit 117 is connected to the stage 113. The primary electrons are decelerated by generating a voltage between the objective lens 112 and the sample 114 by the returning power supply 118.
[0031] The sample 114 is two-dimensionally scanned with the primary electrons by a scanning deflector 120 controlled by a deflector control unit 119. Secondary electrons are generated by an interaction between the primary electrons and the sample 114. The generated secondary electrons pass through the objective lens 112 and form a spread spot on a secondary electron conversion plate 121. The secondary electron conversion plate 121 is scanned with the secondary electrons by the scanning deflector 120, and tertiary electrons are generated by an interaction between the secondary electrons and the secondary electron conversion plate 121. The tertiary electrons are deflected, by an E?B lens 123 whose applied voltage and excitation current are controlled by an E?B control unit 122, toward a direction of a detector 125 controlled by a detector control unit 124, and are detected by the detector 125. The detected tertiary electrons are converted into electric signals, and the electric signals are calculated by a control unit 126 and displayed as an SEM image on a display device 127. The E?B lens 123 has a multipole structure, so that aberrations (astigmatism, chromatic aberrations, deflection distortion, and the like) generated when electrons are deflected from the optical axis 110 can also be corrected. Details will be described later.
[0032] When the field of view of the SEM image is moved, the stage 113 is moved by the stage control unit 115 or a radiation position of the primary electrons on the sample 114 is moved by an image shift deflector 128 controlled by a deflector control unit 119. An astigmatism corrector 130 controlled by an astigmatism corrector control unit 129 corrects parasitic astigmatism of the electron optical system.
[0033] The charged particle beam device of the present embodiment is not limited to the scanning electron microscope shown in
[0034] A method for demagnetizing the magnetic lens in the present embodiment will be described with reference to
[0035] The alternating attenuation current applied for demagnetization of the magnetic lens in the present embodiment can be formulated as follows.
[0036] The alternating attenuation current oscillates such that the current values alternately become a first-polarity current I.sub.1(n) and a second-polarity current I.sub.2(n) (n is the number of times of amplitude variation). The first-polarity current I.sub.1(n) and the second-polarity current I.sub.2(n) are respectively expressed as
[0038] Note that the attenuation function ?.sub.1(n) of the first polarity and the attenuation function ?.sub.2(n) of the second polarity may be the same or different. When ?.sub.1(n) and ?.sub.2(n) are the same, the control can be simplified, and when ?.sub.1(n) and ?.sub.2(n) are different from each other, the type and magnitude of the parasitic aberration caused by the remanent magnetization can be changed.
[0039] As shown in
[0040] In addition, it is desirable to define an attenuation constant ? indicating the degree of amplitude attenuation, and set the attenuation function of the first polarity to ?.sub.1(n, ?) and the attenuation function of the second polarity to ?.sub.2(n, ?). The attenuation constant is a constant for controlling an attenuation amount of the current value per amplitude variation, that is, a magnitude of a difference between ?.sub.1(n) and ?.sub.1(n+1) and a difference between ?.sub.2(n) and ?.sub.2(n+1). As the current value of the alternating attenuation current is rapidly reduced, the demagnetization time can be shortened. On the other hand, as the attenuation amount per oscillation variation is smaller, the difference between the remanent magnetization after the application of the alternating attenuation current and 0 can be controlled to be smaller.
[0041] For example, the attenuation function ?(n, ?) may be any one of a linear function, an exponential function, and a power attenuation function. When the attenuation function is a linear function, the attenuation function can be expressed as ?(n, ?)=???n+1 (0<?<1). When the attenuation function is an exponential function, the attenuation function can be expressed as ?(n, ?)=exp(?? n) (0<?<1). When the attenuation function is a power attenuation function, the attenuation function can be expressed as ?(n, ?)=(1/?).sup.n (?>1).
[0042] Examples of waveforms of the amplitude asymmetric alternating attenuation current are shown in
(1) FIG. 6A
[0043]
(2) FIG. 6B
[0044]
(3) FIG. 6C
[0045]
(4) FIG. 6D
[0046]
[0047] A method for determining the asymmetric coefficient ? will be described with reference to
[0048] A method for determining the attenuation constant ? will be described with reference to
[0049]
[0050] Subsequently, an attenuation constant is set (S808). After an alternating attenuation current oscillating between the first-polarity current I.sub.1(n) and the second-polarity current I.sub.2(n) based on the determined asymmetric coefficient ? and the attenuation constant ? temporarily determined in step S808 is applied to the magnetic lens (S809), a shape of an electron beam is evaluated (S810). The beam shape is determined (S811), the attenuation constant ? is changed to be small if the beam shape is not a perfect circle, and the attenuation constant ? is changed to be large if the beam shape is a perfect circle (S812), and the processing of steps S809 to S811 is repeated. The largest attenuation constant at which the beam shape is a perfect circle is determined as the attenuation constant ?. The determined demagnetization parameters and attenuation function are stored in a storage device (memory) of the control unit 126 for each magnetic lens, and the setting flow is terminated (S813). When the magnetic lens is demagnetized, the demagnetization parameters and the attenuation function stored in the storage device are read, and the magnetic lens is demagnetized.
[0051] An example in which the method for demagnetizing the magnetic lens according to the present embodiment is performed on the E?B lens 123 will be described. The E?B lens 123 has a structure disclosed in PTL 2, and an outline of the E?B lens 123 will be described with reference to
[0052] As described above, since the magnetic field deflectors (poles) of the E?B lens have different magnetic characteristics, non-uniform remanent magnetization occurs in the plane when the respective magnetic field deflectors are demagnetized by the same demagnetization method. The remanent magnetization varies for each apparatus, which causes an instrumental error. For example,
[0053] The multipole lens has non-uniform magnetic characteristics in the plane, and thus it is difficult to minimize the remanent magnetization of all the poles. Therefore, it is effective to prevent the occurrence of the parasitic aberrations that are likely to affect the decomposition performance. For example, when the demagnetization method in the present embodiment is applied to a pole that generates a quadrupole field, an oblique quadrupole field, or a pole field obtained by superimposing a quadrupole field and an oblique quadrupole field, and generates a quadrupole lens that prevents astigmatism for each direction, deterioration of the decomposition ability caused by remanent magnetization can be significantly prevented. A general demagnetization method is applied to a pole other than the pole that generates a quadrupole field, an oblique quadrupole field, or a pole field obtained by superimposing a quadrupole field and an oblique quadrupole field.
REFERENCE SIGNS LIST
[0054] 101: cathode [0055] 102: first anode [0056] 103: second anode [0057] 104: electron gun control unit [0058] 105, 108: condenser lens control unit [0059] 106, 109: condenser lens [0060] 107: objective movable aperture [0061] 110: optical axis [0062] 111: objective lens control unit [0063] 112: objective lens [0064] 113: stage [0065] 114: sample [0066] 115: stage control unit [0067] 116: sample height measuring instrument [0068] 117: returning voltage control unit [0069] 118: returning power supply [0070] 119: deflector control unit [0071] 120: scanning deflector [0072] 121: secondary electron conversion plate [0073] 122: E?B control unit [0074] 123: E?B lens [0075] 124: detector control unit [0076] 125: detector [0077] 126: control unit [0078] 127: display device [0079] 128: image shift deflector [0080] 129: astigmatism corrector control unit [0081] 130: astigmatism corrector [0082] 200I, 300I, 500I: excitation current [0083] 200B, 300B, 500B: magnetic field [0084] 202, 204, 302, 304, 502, 504: amplitude [0085] 203, 206, 208, 303, 306, 308, 503, 506, 508: first-polarity current [0086] 205, 207, 209, 305, 307, 309, 505, 507, 509: second-polarity current [0087] 211, 212, 311, 312, 511, 512: envelope curve [0088] 213, 220, 313, 320, 513, 520: remanent magnetization [0089] 214, 215, 216, 217, 218, 219, 314, 315, 316, 317, 318, 319, 514, 515, 516, 517, 518, 519: magnetic field [0090] 401, 402: magnetic field response [0091] 701: threshold value [0092] 711, 712, 713: beam shape