DEVICES AND METHODS FEATURING THE ADDITION OF REFRACTORY METALS TO CONTACT INTERFACE LAYERS

Abstract

Disclosed embodiments include CdS/CdTe PV devices (100) having a back contact (110,112) with oxygen gettering capacity. Also disclosed are back contact structures (110, 112) and methods of forming a back contact in a CdS/CdTe PV device (100). The described contacts and methods feature a contact having a contact interface layer (100) comprising a contact interface material, a p-type dopant and a gettering metal.

Claims

1. A method comprising: forming a sputtering target comprising a contact interface material, a p-type dopant, and a gettering metal; depositing a contact interface layer from the sputtering target to a CdTe device layer; and depositing an outer metallization layer to the contact interface layer.

2. The method of claim 1 wherein the gettering metal in the sputtering target is a non-oxide compound of the gettering metal that exhibits a smaller negative enthalpy than the metal oxide of the gettering metal.

3. The method of claim 1 wherein the gettering metal is Ti, Zr, or Hf.

4. The method of claim 2 wherein the gettering metal is TiTe.sub.2.

5. The method of claim 1 the contact interface material is ZnTe.

6. The method of claim 1, wherein: the contact interface material, the p-type dopant, and the getting material were pressed to form the sputtering target in an inert or reducing atmosphere; and machining the sputtering target in an inert or reducing atmosphere.

7. The method of claim 1 further comprising depositing the contact interface layer in an inert or reducing atmosphere.

8. The method of claim 1 wherein the sputtering target comprises ZnTe, Cu, and a gettering metal.

9. The method of claim 8 wherein the sputtering target comprises ZnTe, Cu, and TiTe.sub.2.

10-28. (canceled)

29. The method of claim 1, wherein the p-type dopant is a group IA species or a group VA species.

30. The method of claim 29, wherein the p-type dopant is Cu.

Description

BRIEF DESCRIPTION OF THE DETAILED DRAWINGS

[0015] Exemplary embodiments are illustrated in referenced figures of the drawings. It is intended that the embodiments and figures disclosed herein are to be considered illustrative rather than limiting.

[0016] FIG. 1 is a schematic diagram of a CdS/CdTe device as disclosed herein, immediately after deposition of back contact layers, before Cu diffusion occurs.

[0017] FIG. 2 is a flowchart illustration of a disclosed method.

[0018] FIG. 3 is a schematic diagram of the CdS/CdTe device of FIG. 1, after Cu diffusion occurs.

DESCRIPTION

[0019] Unless otherwise indicated, all numbers expressing quantities of ingredients, dimensions, reaction conditions and so forth used in the specification and claims are to be understood as being modified in all instances by the term about.

[0020] In this application and the claims, the use of the singular includes the plural unless specifically stated otherwise. In addition, use of or means and/or unless stated otherwise. Moreover, the use of the term including, as well as other forms, such as includes and included, is not limiting. Also, terms such as component encompass both components comprising one unit and components that comprise more than one unit unless specifically stated otherwise.

[0021] Certain embodiments disclosed herein are methods useful for the manufacture of high efficiency CdS/CdTe PV devices. Other embodiments include specific CdS/CdTe PV devices and device layers. As generally shown in FIG. 1, a CdS/CdTe PV device 100 includes a superstrate 102 which is usually a glass superstrate. The device also includes one or more TCO layers 104 in physical contact with the superstrate; an n-type CdS layer 106 in electrical contact with at least one TCO layer 104, and a CdTe layer 108 in electrical contact with the CdS layer 106. A superstrate configured CdS/CdTe device 100 also includes a back ohmic contact in electrical contact with the CdTe layer 108. In one embodiment, a back contact includes at least a contact interface layer 110 and an outer metallization layer 112 although fewer or more contact layers may be provided. The contact interface layer 110 provides for suitable adhesion between the CdTe layer and any metal outer contact. More importantly, with respect to the present disclosure, a contact interface layer 110 can be deposited from materials and according to techniques designed to significantly impact the operational properties of a device. The methods and structures disclosed herein may also be implemented to create or enhance the back contact of a CdS/CdTe PV device prepared in a substrate configuration.

[0022] In particular, certain back contact formation processes will significantly alter the electrical properties of the underlying CdTe layer, thereby significantly affecting device functionality. An as-deposited CdTe layer is usually of insufficient electrical quality to support effective junction operation. Certain back contacting processes can be used to diffuse one or more dopant species, for example Cu, into the CdTe layer. Dopants diffused in this manner can improve the electrical quality of an uncontacted CdTe layer. For example, successful Cu diffusion into the CdTe layer causes the CdTe layer to become sufficiently p-type to establish a strong field in the CdTe regions near to the CdS layer.

[0023] The contact interface layer 110 may be composed of a compound with a group VI material as the anion, for example O, S, Se, and Te. As noted above the contact interface layer overlies the CdTe layer and the common anion rule suggests that two discrete layers with common anions are preferred if the interface benefits from nearly continuous valance bands. Valance-band continuity is an important attribute for low-resistance hole conduction, especially when it is difficult for the semiconductor absorber material to be made highly p-type, as is the case with CdTe. Some specific examples of suitable contact interface layers include: ZnTe, HgTe, Cu.sub.xTe (x being a subscript between 0 and 2), PbTe, SnTe, MoTe.sub.2, CrO.sub.2, WO.sub.2, CdS, ZnS, PbS, Mo.sub.xO.sub.y (x and y between 1 and 3), and CdO. As used herein, any of the foregoing or similar materials that are either doped or undoped, which can be used to form a contact interface layer are referred to as contact interface materials. One back contact structure which has been shown to be advantageous includes a ZnTe contact interface layer doped with copper, referred to herein as a ZnTe:Cu contact interface layer.

[0024] Any processing step or natural occurrence which prevents, limits, or alters the reproducible diffusion of Cu into the CdTe layer can be detrimental to optimizing the final device efficiency. For example, the oxidation of Cu to form CuO during or after deposition of a contact interface layer prohibits diffusion of the Cu as desired. Oxidation of Cu may result within the pre-deposited source, during deposition, or during one or more post-deposition processes.

[0025] Applicants have determined that the use of Ti, deposited as the outer metallization layer over a ZnTe:Cu contact interface layer for polycrystalline CdTe devices provides several performance advantages. Initially it may be noted that Ti is more adherent to the ZnTe:Cu contact interface layer than some other refractory metals, such as Ni. Second, Ti can be chemically etched selectively from the ZnTe:Cu layer. In addition, devices having Ti metallization yield consistently higher voltages (about 100 mV+ higher) when compared to substantially identical devices using Ni or another metal in as the outer contact.

[0026] Applicants have determined that one, or possibly the primary cause of increased device voltage due to the use of Ti metallization is the effectiveness of Ti as an oxygen getter. As used herein, a getter is any substance, typically a metal, which readily combines with oxygen and serves to semi-permanently bind oxygen during any stage of device fabrication or use to prevent the oxygen from undesirably oxidizing another element or compound. With respect to the CdS/CdTe device having Ti metallization described above, Applicant believes that one source of the oxygen which forms TiO.sub.2 at or near the Ti/ZnTe:Cu interface is oxygen diffusing out of the ZnTe:Cu layer. Thus, the use of Ti metallization getters oxygen from the ZnTe:Cu layer causing there to be less oxygen remaining within the ZnTe:Cu layer to form CuO. Accordingly, Cu diffusion into the CdTe layer is more reproducible, and the gettering ability of Ti directly enhances the electrical properties of the device noted above.

[0027] Ti is an effective oxygen getter in part because it can oxidize rapidly to form TiO.sub.2. Ti is an effective getter even though CuO has a relatively strong bond between the Cu and oxygen. The enthalpy of the CuO bond is approximately 38 to 40 kcal/mole, which demonstrates why Cu bound into CuO is unavailable to the CdTe layer. The enthalpy of a CuTe bond is only about 6 kcal/mole. However, the CuO bond it is not as strong as a TiO.sub.2 bond at 226 kcal/mol. Typical ZnTe:Cu contact deposition processes provide sufficient thermal energy to enable oxygen diffusion, as well as the disassociation of some of the CuO bonds. There is not, however sufficient thermal energy available to disassociate any TiO.sub.2 bonds. Therefore, oxygen that diffuses to a Ti surface will be permanently gettered at the process and operating temperatures of the CdS/CdTe device.

[0028] The foregoing observations explain why CdS/CdTe devices having a Ti metallization layer tend to produce higher voltages. In summary, one important role of the Ti (or other refractory metal) layer is to getter oxygen from the ZnTe:Cu contact interface layer and possibly also to getter oxygen from the CdTe layer. This insight suggests that device performance could be further enhanced with alternative contacts specifically designed to getter oxygen more effectively.

[0029] In a CdS/CdTe device having a Ti metallization layer as described above, the benefits of the Ti layer as a gettering surface can only be realized if oxygen can diffuse all the way through the contact interface to the Ti layer. Also, once the Ti surface is oxidized, the rate at which the Ti layer getters additional oxygen is reduced. Furthermore, a reasonable degree of oxygen diffusion is possible during the production of research devices were the duration of high temperature contacting processes is relatively long (typically 1-4 hours). On the contrary, relatively long-distance oxygen diffusion during production becomes much less likely in a rapid-cycle commercial process which may take 1 minute or less. In a rapid commercial process sequence, any Ti getter surface would be much more effective if it were located closer to the detrimental oxygen, or along a likely oxygen diffusion path.

[0030] Certain embodiments disclosed herein feature an alternative contact design that better meets the needs of a commercial device. The disclosed contacts have Ti or another refractory metal distributed throughout the contact interface layer, which may be, but is not limited to a ZnTe:Cu contact interface layer. The methods described herein can be implemented with any suitable getter metal compound, dopant and contact-interface material. In much of the comprehensive disclosure below, a certain metal (Ti), a specific contact interface material (ZnTe) and a specific dopant (Cu) are discussed in significant detail. These particular material choices are discussed in detail to conveniently illustrate the underlying principles disclosed herein. Therefore, the discussion of Ti, ZnTe and Cu herein should not be construed as limiting the embodiments disclosed to any particular getter metal, contact interface material or dopant.

[0031] A contact having Ti or another refractory metal distributed throughout a contact interface or other layer could possibly be fabricated by mixing Ti granules into the powder used to make the pressed-powder sputtering target used to deposit the contact interface layer. Unfortunately, this fabrication method presents a problem for commercial implementation. It is difficult to mix pure Ti granules into the ZnTe+Cu powder used to form an evaporation/sublimation source or sputtering target. Unless the target powder preparation was performed under reducing or ultra-high vacuum conditions, the Ti granules would oxidize quickly and form stable TiO.sub.2 granules during the mixing process.

[0032] Also, because TiO.sub.2 has exceptionally high negative enthalpy as noted above, a typical sputtering process will not fractionate a significant portion of the TiO.sub.2 into elemental Ti and oxygen. Furthermore, any elemental Ti that was fractionated would quickly reform TiO.sub.2 with the oxygen just released, destroying the ability of the inclusion to getter additional oxygen. Another problem anticipated with a method based upon mixing elemental Ti into the target powder is the potential for rapid oxidation of Ti during any stage of the target preparation process which could be an extremely hazardous situation.

[0033] Accordingly, certain embodiments disclosed herein incorporate Ti or other refractory metal atoms into a sputtered film without adding elemental Ti to a sputter target. In particular, as illustrated in FIG. 2, a suitable target may be prepared by first selecting a potential gettering metal having a large negative enthalpy for its metal oxide(s) and possibly other useful parameters (step 200). Next, a suitable non-oxide compound of the metal may be identified which has a lower negative enthalpy than the metal oxide (Step 202). Ideally, the negative enthalpy of the selected non-oxide metal compound will be low enough that the metal and the additional element(s) will substantially fractionate at the energies and/or temperatures required to deposit the contact layers. Once a suitable metal compound is selected, an appropriate amount of the selected compound may be mixed into a target powder along with a semiconductor and dopant, for example, ZnTe and Cu (step 204). The target powder may then be pressed into a deposition target by any suitable process (step 206). Similarly, the target may be machined or otherwise prepared for use (step 208). The target may then be used to deposit a contact interface layer or other contact layer on the CdTe layer of a CdS/CdTe device (step 210). In certain instances one or more of the mixing, pressing, machining or deposition steps (steps 204-210) may be wholly or partially performed in an inert or reducing atmosphere to avoid oxygen contamination.

[0034] If the non-oxide compound of the gettering metal is selected to have a suitably low negative bond enthalpy, the compound will fractionate during deposition resulting in substantially elemental atoms of the gettering metal deposited within and distributed throughout the deposited contact layers. As schematically illustrated in FIG. 1, a CdS/CdTe device 100 might thus be produced having a contact interface layer 110 with a necessary dopant such as Cu (illustrated as Cu circles 114) and a gettering metal such as Ti (illustrated as Ti squares 116) distributed throughout the contact interface layer in a quantity controlled by the target preparation steps.

[0035] During and after deposition, the deposited atoms of Cu, the gettering metal and oxygen will diffuse between the contact interface layer 110, the CdTe layer 112 and possibly other layers. Oxygen can also diffuse into the device from any processing atmosphere containing oxygen or from the air during use or storage. These highly generalized diffusion pathways are represented on FIG. 1 as arrows. After some diffusion has occurred, the device becomes as schematically illustrated in FIG. 3. In particular, a significant portion of the oxygen present in the contact interface layer 110 and potentially the CdTe layer 108 becomes permanently bound to the gettering metal (as shown by TiO.sub.2 rectangles 118) on FIG. 3. The oxygen can be bound in the contact interface layer 110 or near the contact interface layer in the CdTe layer 108 since a small amount of elemental Ti may diffuse into the CdTe layer. Because enough of the oxygen within the device has been effectively gettered, the Cu 114 is free to diffuse from the contact interface layer 110 to the CdTe layer 108 as is required for optimum device performance. In addition, additional oxygen diffusing into the device during storage or use can be gettered by surplus gettering metal. Thus, the back contact metallization 112 can be implemented with a metal which is not an effective getter, if desired.

[0036] As noted above, a suitable Ti compound for the formation of a deposition target as described in FIG. 2, steps 204-208 should have the following qualities: a) higher stability to oxidation than pure Ti; b) does not contain oxygen; and c) does not have a high negative enthalpy. These criteria should provide for the compound to be ground or otherwise processed to the proper size for target pressing without significant oxidization. The foregoing criteria also allow fractionation of the selected compound into atomic species during sputtering, thereby causing Ti to be incorporated into the contact layers as a getter. For example, the compound TiTe.sub.2 has a heat of formation of about 50 kcal/mole and therefore meets the criteria outlined above.

[0037] One potential concern with adding TiTe.sub.2 granules to a ZnTe+Cu target mixture is that the target powder mixture would become overly enriched in Te. Fortunately, Te enrichment may be of benefit for several reasons. Material defect calculations suggest that CdTe and ZnTe layers that can be deficient in Te, and this deficiency can cause the formation of Te vacancies within the CdTe material, and these vacancies can act as donors and/or mid-gap recombination sites. These donors and/or recombination sites are undesirable in CdTe used for PV applications because they are known to limit the performance of the device. By adding a small amount of extra Te in the form of TiTe.sub.2, the target not only produces a film with an appropriate amount of Ti getter, but also yields a ZnTe:Cu film that is enriched in Te or at least less likely to be Te deficient. Te that diffuses from the ZnTe:Cu contact interface layer into the CdTe layer could be optimized to improve the CdTe quality if Te vacancies were present. To preserve the foregoing benefits, it is important that the deposition temperature be selected to control evaporation of the low melting-point/high vapor pressure Te as the sputtering process heats the various surfaces involved.

[0038] The most important plasma, surface, and bulk reactions that are expected to progress during sputtering of a TiTe.sub.2 containing ZnTe:Cu target are as follows:

TABLE-US-00001 (1) TiTe.sub.2 + Sputtering = Ti + 2Te (Fractionation of TiTe.sub.2 during sputtering); (2) Ti + 2CuO = TiO.sub.2 + 2Cu (Gettering of oxygen to release Cu); (3) Te + V.sub.Te = Te.sub.Te (Elimination of V.sub.Te defects in ZnTe:Cu or CdTe).

[0039] Although the above description has been presented using Ti as the getter species, the embodiments disclosed herein will work equally well with other Group 4A refractory metals such as Zr and Hf. Further, in some applications, it may be beneficial to choose gettering addition(s) that enhance other electrical, structural, or optical material properties of the device. In these cases, the effectiveness of the additional element(s) as a getter may be a balance between the enthalpy of the resulting metal oxide, and other required properties. It is expected that metals such as Mg, Ca, Sr, Ba, Sc, Y, La, Ac, V, Nb, Ta, Cr, Mo, and W would be useful in certain applications. For example, in the case of ZnTe:Cu as a contact interface, Cu acts as a Group IB, p-type dopant by substituting onto a Cd lattice site. In this application, a gettering addition from Group 1A of the periodic table may provide not only oxygen gettering function, but also provide p-type doping similar to Cu. The choice of an appropriate getter metal compound added to a target in the manner of TiTe.sub.2 can be guided, in part, by the ability to find compounds that could be added to a sputtering target which would be expected to sputter atomically. For example, a compound such as ZrO.sub.2 that will tend to sputter with a significant fraction of ZrO dimers or trimers (two or more atoms rather than one atom) may be unsuitable.

[0040] In addition, the above description has been presented using ZnTe as the contact interface material. The foregoing principles can be applied to any suitable contact interface material, including but not limited to ZnTe, HgTe, Cu.sub.xTe (x being a subscript between 0 and 2), PbTe, SnTe, MoTe.sub.2, CrO.sub.2, WO.sub.2, CdS, ZnS, PbS, Mo.sub.xO.sub.y (x and y between 1 and 3), and CdO. These alternative interface materials may also be doped to attain necessary electrical parameters for the intended contact application.

[0041] The description of the disclosed embodiments has been presented for purposes of illustration and description, but is not intended to be exhaustive or limiting of the claims to any particular form disclosed. The scope of the present disclosure is limited only by the scope of the following claims. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments described and shown in the figures were chosen and described in order to best explain the principles of the various embodiments, the practical application, and to enable others of ordinary skill in the art to understand the various embodiments with various modifications as are suited to the particular use contemplated.

[0042] While a number of exemplary aspects and embodiments have been discussed above, those of skill in the art will recognize certain modifications, permutations, additions and sub combinations thereof. It is therefore intended that the following appended claims and claims hereafter introduced are interpreted to include all such modifications, permutations, additions and sub-combinations as are within their true spirit and scope of the disclosure.

[0043] Various embodiments of the disclosure could also include permutations of the various elements recited in the claims as if each dependent claim was a multiple dependent claim incorporating the limitations of each of the preceding dependent claims as well as the independent claims. Such permutations are expressly within the scope of this disclosure.