Wavefront correction element for use in an optical system

Abstract

A wavefront correction element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or a mask inspection apparatus, has a carrier film (110, 210, 410) which at least partly transmits electromagnetic radiation that has an operating wavelength of the optical system and that impinges on the carrier film during operation of the optical system. The carrier film (110, 210, 410) is configured such that the real part of the complex refractive index of the carrier film varies over a used region of the surface of the carrier film (110, 210, 410).

Claims

1. A wavefront correction element for use in an optical system, comprising: a carrier film which at least partly transmits electromagnetic radiation that has an operating wavelength of the optical system and impinges on a surface of the carrier film during operation of the optical system; wherein the carrier film is configured such that a real part of a complex refractive index of the carrier film varies over a used region of the surface of the carrier film, wherein the carrier film is produced from a first material, wherein the variation of the real part of the refractive index is produced by doping the carrier film with impurity atoms of a second material, wherein the carrier film has further doping with impurity atoms of a third material, which differs from the first material and from the second material, and wherein the further doping at least partly compensates a variation in the intensity, induced by the impurity atoms of the second material, of the electromagnetic radiation transmitted through the wavefront correction element over a used region of the surface of the carrier film.

2. The wavefront correction element as claimed in claim 1, wherein the variation of the real part of the refractive index is configured such that, during the operation of the optical system, a wavefront modification which at least partly corrects a wavefront aberration present in the optical system is brought about for electromagnetic radiation that is transmitted through the wavefront correction element.

3. The wavefront correction element as claimed in claim 1, wherein the variation of the real part of the refractive index over a used region of the surface of the carrier film is at least 10% in relation to the maximum value of the real part of the refractive index.

4. The wavefront correction element as claimed in claim 1, wherein the doping factor integrated along the thickness of the carrier film varies for the doping over the used region of the surface of the carrier film.

5. The wavefront correction element as claimed in claim 1, wherein the first material is selected from the group consisting of silicon (Si), zirconium (Zr), molybdenum (Mo), ruthenium (Ru) and niobium (Nb).

6. The wavefront correction element as claimed in claim 1, wherein the second material is selected from the group consisting of molybdenum (Mo), ruthenium (Ru), carbon (C), niobium (Nb) and titanium (Ti).

7. The wavefront correction element as claimed in claim 1, wherein the third material is selected from the group containing germanium (Ge), aluminum (Al), iodine (I), magnesium (Mg) and gallium (Ga).

8. The wavefront correction element as claimed in claim 1, wherein the carrier film has a constant thickness.

9. The wavefront correction element as claimed in claim 1, wherein the carrier film has a thickness profile with a varying thickness.

10. The wavefront correction element as claimed in claim 1, wherein a protective layer is provided on at least one side of the carrier film.

11. The wavefront correction element as claimed in claim 1, wherein the carrier film is provided on a reflective optical element.

12. The wavefront correction element as claimed in claim 1 and configured for an operating wavelength of less than 30 nm.

13. A mirror, comprising a mirror substrate and a reflection layer stack with a plurality of layers, wherein one of the layers is embodied as a wavefront correction element as claimed in claim 1.

14. A method for producing a wavefront correction element configured for an optical system, comprising: providing a carrier film which at least partly transmits electromagnetic radiation that has an operating wavelength of the optical system and impinges on a surface of the carrier film during operation of the optical system, wherein the carrier film is produced from a first material; and processing the carrier film such that a variation of a real part of a complex refractive index of the carrier film is produced over a used region of the surface of the carrier film, wherein the processing of the carrier film comprises: doping the carrier film with impurity atoms of a second material, which differs from the first material, further doping the carrier film with impurity atoms of a third material, which differs from the first material and from the second material, and wherein the further doping at least partly compensates a variation in the intensity, induced by the impurity atoms of the second material, of the electromagnetic radiation transmitted through the wavefront correction element over a used region of the surface of the carrier film.

15. The method as claimed in claim 14, wherein a protective layer is embodied on at least one side of the carrier film.

16. The method as claimed in claim 15, wherein the doping with the impurity atoms of the second material is effectuated after forming the protective layer.

17. An optical system of a microlithographic projection exposure apparatus, comprising at least one wavefront correction element as claimed in claim 1.

18. A microlithographic projection exposure apparatus comprising an illumination device and a projection lens, wherein the projection exposure apparatus comprises a wavefront correction element as claimed in claim 1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In the drawing:

(2) FIG. 1 shows a schematic illustration for elucidating the construction of a wavefront correction element according to a first embodiment of the invention;

(3) FIG. 2 shows a schematic illustration for elucidating the construction of a wavefront correction element according to a further embodiment of the invention;

(4) FIG. 3 shows a diagram for explaining the principle of distributions of the doping factor along the beam direction with an equivalent effect;

(5) FIG. 4 shows a schematic illustration for elucidating the construction of a wavefront correction element according to a further embodiment of the invention;

(6) FIGS. 5A and 5B show schematic illustrations in which values of the complex refractive index are plotted for different materials that can be used in a wavefront correction element; and

(7) FIG. 6 shows a schematic illustration of the possible construction of a microlithographic projection exposure apparatus designed for operation in the EUV range.

DETAILED DESCRIPTION

(8) Below, the possible construction of a wavefront correction element according to the invention is described initially with reference to the schematic illustration shown in FIG. 1.

(9) According to FIG. 1, a wavefront correction element 100 has, in particular, a carrier film 110 which is produced from silicon (Si) in the exemplary embodiment and has an exemplary thickness of 200 nm. A protective layer (e.g. an antioxidative protection layer) 130 and 140 is formed both on the light-entrance side and on the light-exit side of the carrier film 110, the thicknesses of said protective layers being able to be, in a purely exemplary manner, in the region of 1-2 nm and being able to be produced from e.g. silicon nitride (Si.sub.3N.sub.4).

(10) Moreover, the carrier film 110 has a variation in the refractive index (in particular in the real part of the complex refractive index) over the used region of its surface, with this variation being obtained by virtue of the carrier film 110 being doped by impurity atoms 120 made of a second material, wherein the doping factor of this doping varies within the carrier film 110 over the used region of the carrier film. In FIG. 1, a Gaussian profile of this doping factor is specified in a purely exemplary manner. As will be explained below with reference to FIG. 3, more complex profiles of the doping factor are also possible, wherein, in particular, the same effect on a light beam passing through the film or through the wavefront correction element can be obtained by way of different (but equivalently acting) doping profiles since, overall, the integral effect in the beam passage direction or along the thickness or the depth of the wavefront correction element is decisive.

(11) Said doping can be carried out in a final manufacturing step during the production of the wavefront correction element 100 and, in particular, after a preceding application of the relevant protective layers 130, 140.

(12) The doping according to the invention with impurity atoms is preferably effectuated in a targeted manner using impurity atoms of a material which has a comparatively low influence on the absorption, i.e. in which the imaginary part of the complex refractive index or the value (which describes the absorption) is low. By contrast, the difference between carrier material and the material of the impurity atoms introduced by the doping in the parameter is decisive for the phase deviation, with, as a rule, a phase deviation that is as large as possible being desirable. Here, in general, the relationship applies that the maximum phase difference .sub.max for two rays which pass through different regions of the carrier film is substantially given by
.sub.max=abs(.sub.1.sub.2)*d(2)
where .sub.1 denotes the parameter for the undoped material of the carrier film, .sub.2 denotes the parameter for the doped material and d denotes the thickness of the carrier film.

(13) By way of example, if silicon (Si) with a value of .sub.1=0.001 is used as first material of the carrier film and molybdenum (Mo) with a value of .sub.2=0.076 is used as a second material of the impurity atoms that are introduced by doping, this results in a value of .sub.max=(0.0760.001)*100 nm=7.5 nm for the maximum obtainable phase deviation for an exemplary thickness of the carrier film of 100 nm which, in the case of an operating wavelength of =13.5 nm, approximately corresponds to a maximum obtainable phase deviation of . This value can also be appropriately increased by selecting a greater thickness of the carrier film, for example to approximately 2 in the case of a thickness of the carrier film of 200 nm, etc. Setting the maximum phase deviation corresponds here to 100% doping, wherein e.g. a quarter of this value is obtained accordingly in the case of 25% doping.

(14) More complicated distributions in view of the doping factor are possible within the scope of the invention since all that is important is the integral effect in the beam passage direction. In a qualitative diagram, FIG. 3 shows different doping examples with an equivalent effect in the beam passage direction, with the doping factor in each case being plotted as a function of the depth of the wavefront correction element. Graph 301 shows homogeneous doping along the depth, graph 303 shows a linearly decreasing profile and graph 302 shows a more complicated profile with a doping factor that increases with depth. Since the integrated areas under the graph are the same in each case in the diagram, the effects on the light beam when passing through the film or through the wavefront correction element are also identical. Moreover, various profiles, for example according to FIG. 3, can also be combined over the used region of the surface of the carrier film or of the wavefront correction element.

(15) A method that is suitable for the doping according to the invention is the ion implantation technique, in which degrees of doping can be set, for example in the range from 10% to 20%. In respect of the method of the ion implantation technique, reference is made in a purely exemplary manner to the publications H. Ryssel, I. Ruge: Ion Implantation, J. Wiley & Sons, Chichester 1986, ISBN 0-471-10311-X and Handbook of ion beam processing technology, edited by J. J. Cuomo, S. M. Rossnagel, HR Kaufman Noyes Publications 1989.

(16) By way of example, depending on the material of the impurity atoms, the energy of the impurity atoms implanted during the doping can lie in the range from 1 keV to 100 keV. The ion fluxes set during the implantation can be suitably selected taking into account the thermal capacity of the carrier film (and avoiding excessive heating that may lead to a breakup thereof), for example in the range of a few pA/cm.sup.2 to several 10 A/cm.sup.2.

(17) According to FIG. 1, the carrier film 110 or the wavefront correction element 100 has a constant thickness such that, in particular, a regional ablation of material of the carrier film, which may be accompanied by mechanical destabilization, is avoided. However, the invention is not restricted thereto, with a carrier film 410 also having a thickness profile with a varying thickness in further embodiments, as illustrated schematically in FIG. 4. Incidentally, in FIG. 4, components analogous or substantially functionally identical to FIG. 1 are denoted by reference numerals increased by 300. As a consequence, the phase or wavefront effect of a varying thickness profile of the carrier film 410 is combined according to FIG. 4 with the phase or wavefront effect according to the invention on account of the doping with impurity atoms 420, wherein, in particular, a fine setting of the phase effect or the wavefront modification can be effectuated by said doping.

(18) FIG. 2 shows a further embodiment of a wavefront correction element 200 according to the invention, wherein components which are analogous or substantially have the same function are denoted by reference signs increased by 100 in relation to FIG. 1.

(19) The wavefront correction element 200 according to FIG. 2 differs from that in FIG. 1 by virtue of provision additionally being made of a further (secondary) doping of impurity atoms 250 of a third material, which serves to at least partly compensate an unwanted intensity variation that is induced by the (primary) doping with the impurity atoms 220 of the second material over a used region of the surface of the carrier film 210.

(20) As indicated purely schematically in FIG. 2, said secondary doping with impurity atoms 250 is configured in an inverse or complementary fashion to the primary doping of impurity atoms 220 to the extent that, overall, a transmission profile that is as constant as possible emerges over the field or over the used region of the surface of the wavefront correction element 200. The principle described above with reference to FIG. 3, according to which the same effect on a light beam passing through the film or through the wavefront correction element can be obtained by way of different (but equivalently acting) doping examples in the beam passage direction or along the depth since, overall, the integral effect in the beam passage direction is decisive, also applies in respect of this secondary doping.

(21) Moreover, in respect of the secondary doping, the invention is not restricted to the doping that is inverse or complementary to the primary doping and described above on the basis of FIG. 2. Thus, in further embodiments, said secondary doping may also be present in regions in which the primary doping is also already situated.

(22) FIGS. 5A and 5B plot values of the complex refractive index for further different materials that can be used in a wavefront correction element according to the invention, with FIG. 5A plotting the corresponding values for selected materials at an operating wavelength of =13.5 nm and FIG. 5B plotting the corresponding values for selected materials at an operating wavelength of =6.9 nm. In principle, materials with a comparatively large phase deviation (with a comparatively large value) are suitable for the primary doping with impurity atoms according to the invention, wherein, at the same time, the value should not exceed a critical value of approximately 0.01 to 0.02 for the purposes of restricting transmission losses (particularly in the case of a limited source power). To this end, molybdenum (Mo), ruthenium (Ru), carbon (C), niobium (Nb) and titanium (Ti), in particular, are suitable materials at =13.5 nm, wherein the respective value and value for these materials at =13.5 nm is specified in table 1:

(23) TABLE-US-00001 TABLE 1 Material 6 value value Molybdenum (Mo) 0.076200545 0.0064345 Ruthenium (Ru) 0.113630742 0.017061159 Carbon (C) 0.038424399 0.006904726 Niobium (Nb) 0.066245429 0.005195308 Titanium (Ti) 0.048080225 0.014182366

(24) Suitable materials for the secondary doping (with impurity atoms 250) for correcting the transmission of the overall wavefront, described on the basis of FIG. 2, are distinguished by a phase deviation that is as low as possible while having, at the same time, a comparatively large absorption, wherein the value should be substantially less than 0.01 and the value should be substantially greater than 0.01. Exemplary suitable materials for this secondary doping at =13.5 nm are germanium (Ge), aluminum (Al), iodine (I), magnesium (Mg) and gallium (Ga), wherein the respective value and value for these materials at =13.5 nm is specified in table 2:

(25) TABLE-US-00002 TABLE 2 Material 6 value value Germanium (Ge) 0.005335126 0.032091424 Aluminum (Al) 0.002843466 0.029659614 Iodine (I) 0.012140397 0.058258455 Magnesium (Mg) 0.007833972 0.027692031 Gallium (Ga) 0.014838818 0.03930077

(26) Since the absorption properties of the material are defined by the imaginary part of the complex refractive index, what can be achieved by the embodiment described on the basis of FIG. 2 is that, in the case of a secondary doping with a doping pattern that is inverted or complementary to the primary doping, the field profile in the intensity, induced by the primary doping in an unwanted manner, is just compensated.

(27) Even though the wavefront correction element according to the invention, in particular as a wavefront correction film, additionally can be introduced in a virtually freestanding manner into the relevant optical system for obtaining a desired wavefront modification, the invention should also be considered to comprise configurations in further embodiments in which the wavefront correction element is provided on a reflective optical element (in particular an EUV mirror), wherein the carrier film according to the invention, for example, can be configuredas already explained aboveas an intermediate layer in the reflection layer stack of the relevant reflective optical element. Doping of any (functional) layer (e.g. a molybdenum (Mo) or silicon (Si) layer) of the reflection layer stack of an EUV mirror itself is also possible, and so the relevant layer that is doped according to the invention then brings about the desired wavefront correction. The higher the relevant layer is arranged in the direction of the optical effective surface of the EUV mirror, the greater the phase effect obtained by this layer but also the greater the reduction in reflectivity that is caused (and consequently accepted) as a result of the layer.

(28) FIG. 6 shows a schematic illustration of an exemplary projection exposure apparatus which is designed for operation in EUV and which can comprise a wavefront correction element according to the invention.

(29) According to FIG. 6, an illumination device in a projection exposure apparatus 10 designed for EUV comprises a field facet mirror 3 and a pupil facet mirror 4. The light from a light source unit comprising, purely by way of example, a plasma light source 1 and a collector mirror 2 is directed onto the field facet mirror 3. A free electron laser (FEL), for example, also can be used as a light source in further embodiments. A first telescope mirror 5 and a second telescope mirror 6 are arranged in the light path downstream of the pupil facet mirror 4. A deflection mirror 7 is arranged downstream in the light path, said deflection mirror directing the radiation impinging thereon onto an object field in the object plane of a projection lens comprising six mirrors 21-26. At the location of the object field, a reflective structure-bearing mask 31 is arranged on a mask stage 30, said mask being imaged with the aid of the projection lens into an image plane in which a substrate 41 coated with a light-sensitive layer (photoresist) is situated on a wafer stage 40. At least one wavefront correction element according to the invention, in accordance with the embodiments described above, may be arranged in the projection exposure apparatus, wherein the position of the wavefront correction element can be selected in a suitable manner depending on the specific conditions (e.g. installation space and extent of the required correction). Moreover, as already mentioned previously, a wavefront correction element according to the invention either can be configured as a freestanding wavefront correction element or else be provided on at least one mirror that is present in the illumination device or in the projection lens.

(30) Even though the invention has been described on the basis of specific embodiments, numerous variations and alternative embodiments are apparent to a person skilled in the art, for example by combination and/or exchange of features of individual embodiments. Accordingly, such variations and alternative embodiments are concomitantly encompassed by the present invention, and the scope of the invention is restricted only within the meaning of the accompanying patent claims and equivalents thereof.