A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION OF TUNNEL FIELD EFFECT TRANSISTOR

Abstract

A self-aligning preparation method for a drain underlap region in a tunnel field effect transistor: designing asymmetric side wall structures on two sides of the gate of a tunnel field effect transistor, the side of the gate closest to the source region being a thin side wall and the side of the gate closest to the drain region being a thick side wall; and using the source region thin side wall as a hard mask for implantation of the source region of the transistor and the drain region thick side wall as a hard mask for implantation of the drain region of the transistor. The present method effectively uses the thin side walls and thick side walls existing in standard CMOS processes to suppress the ambipolar effect of the tunnel field effect transistor without introducing special materials and special processes, and also optimizes the device variation characteristics. The present method ensures that the tunnel field effect transistor can be monolithically integrated with standard CMOS devices to implement more complex and diverse circuit functions.

Claims

1. A method for preparing a drain end underlap region in a tunnel field effect transistor using self-alignment, comprising: 1) isolating an active region in a semiconductor substrate; 2) growing a gate dielectric material, and growing a gate material on the gate dielectric material; 3) forming a gate pattern using photolithography and etching; 4) growing thin side walls on sides of the gate pattern; 5) growing thick side walls on the thin side walls on the sides of the gate pattern; 6) removing the thick side wall on a side of the gate closest to a source region, while keeping the thin side wall on the side of the gate closest to the source region; 7) using photoresist and the thick side wall on a side of the gate closest to a drain source region as a mask for implantation of the drain region of the tunnel field effect transistor; 8) using photoresist and the thick side wall on a side of the gate closest to a source region as a mask for implantation of the source region of the tunnel field effect transistor; and 9) high-temperature annealing to activate impurities to form the tunnel field effect transistor with a self-aligned drain underlap region.

2. The method of claim 1, wherein the semiconductor substrate includes a material selected from Si, Ge, SiGe, GaAs, or binary or ternary compound semiconductors from II-VI, III-V and IV-IV group, silicon-on-insulator (SOI) or germanium-on-insulator (GOI).

3. The method of claim 1, wherein the gate dielectric material comprises SiO.sub.2, Si.sub.3N.sub.4, or a high-K gate dielectric material.

4. The method of claim 1, wherein growing the gate dielectric material in step 2) comprises one or more of: conventional thermal oxidation, nitrogen-doped thermal oxidation, chemical vapor deposition (CVD), or physical vapor deposition (PVD).

5. The method of claim 1, wherein the gate material comprises doped polysilicon, metal cobalt, nickel, and other metals, or metal silicides.

6. The method of claim 1, wherein the thin side walls and the thick side walls are made of same or different side wall materials.

7. The method of claim 6, wherein the side wall material comprises one or more laminated combinations of silicon oxide, silicon nitride, or silicon carbide.

8. The method of claim 1, wherein the thin side walls have a thickness of 5 nm-10 nm.

9. The method of claim 1, wherein the thick side walls have a thickness of 40 nm-60 nm.

10. The method of claim 1, wherein if there is no etch stop layer between the thick side wall and the thin side wall in step 6), wherein step 6) further comprises: removing both the thick side wall and the thin side wall closest to the source region; and forming a second thin side wall close to the source region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG. 1 illustrates a schematic cross-section of the complete structure of a tunnel field effect transistor after back-end-of-line (BEOL) process according to some embodiments of the present invention;

[0029] FIG. 2 illustrates a schematic cross-section after forming STI isolation on the semiconductor substrate according to one embodiment;

[0030] FIG. 3 illustrates a schematic cross-section after growing the gate dielectric and the gate materials and completing the gate pattern according to one embodiment;

[0031] FIG. 4 illustrates a schematic cross-section after growing the thin side wall according to one embodiment;

[0032] FIG. 5 illustrates a schematic cross-section after growing the thick side wall according to one embodiment;

[0033] FIG. 6 illustrates a schematic cross-section after removing the source region thick side wall according to one embodiment; and

[0034] FIG. 7 illustrates a schematic cross-section after ion implantation of the source/drain according to one embodiment;

Where:

[0035]

TABLE-US-00001 1—Substrate; 2—Shallow Trench Isolation (STI) 3—Gate dielectric layer; 4—Gate, 5—Thin side wall; 6—Thick side wall; 7—Source region; 8—Drain region; 9—Passivation layer of 10—Metal of back-end-of-line. back-end-of-line;

DETAILED DESCRIPTION OF THE INVENTION

[0036] The present invention will become apparent from the following detailed description of embodiments. It is to be noted that the above contents are further detailed description of the present invention in connection with the disclosed embodiments. The invention is not limited to the embodiments referred to, but may be varied and modified by those skilled in the field without departing from the conception and scope of the present invention. The claimed scope of the present invention should be defined by the scope of the claims.

[0037] A specific embodiment of the preparation method in the present invention comprises the steps in FIGS. 1-7:

[0038] 1. Thermally oxidizing a silicon dioxide layer on a bulk silicon substrate (item 1) initially with light doping concentration and (100) crystal orientation, with thickness of about 10 nm, and depositing a silicon nitride layer with thickness of about 100 nm; then etching the Shallow Trench Isolation (STI) region, depositing isolation material to fill deep holes and then Chemical Mechanical Polishing (CMP); preparing the active region STI (item 2) by Shallow Trench Isolation (STI) and then remove the silicon nitride by wet etching, as illustrated in FIG. 2.

[0039] 2. Performing well implantation with phosphorus, the ion implantation dose is 1e13 cm.sup.−2, and the ion implantation energy is 340 keV.

[0040] 3. Bleaching the initially grown silicon dioxide on the surface, and then thermally oxidizing a gate dielectric layer (item 3). The above gate dielectric layer (item 3) is SiO.sub.2 with thickness of about 1.8 nm; depositing the gate material of doped polysilicon layer with thickness of about 100 nm. Pre-implanting polysilicon with phosphorus, wherein the implantation dose is 4e15 cm.sup.−2, and the implantation energy is 6 keV. Patterning the gate pattern through photolithography and etching the gate material and the gate dielectric layer (item 3) until to bulk silicon substrate (item 1), as illustrated in FIG. 3.

[0041] 4. Isotropically depositing and growing 8.5 nm silicon nitride, then anisotropically etching 8.5 nm silicon nitride to form the thin side wall (item 5), and performing thermal annealing at 800° C. for 30 minutes, as illustrated in FIG. 4.

[0042] 5. Isotropically depositing and growing 9 nm silicon dioxide, followed by isotropic deposition and growth of 42 nm silicon nitride. Anisotropically etching 42 nm silicon nitride, followed by 9 nm silicon dioxide to form the thick side wall (item 6), as illustrated in FIG. 5.

[0043] 6. Depositing 15 nm thick layer of silicon dioxide, exposing the source region by photolithography, which protects the drain end gate region and the thick side wall by photoresist. Isotropic over-etching 15 nm silicon dioxide that is not protected by photoresist. Removing the photoresist. Isotropic over-etching 42 nm silicon nitride. Isotropic over-etching 9 nm silicon dioxide. At this time, the source end thick side wall has been removed, as illustrated in FIG. 6.

[0044] 7. Performing source and drain implantation respectively, and one edge of the implantation mask is located on the center line of gate (item 4). The implanted ion in source region (item 7) is BF.sub.2.sup.+, the implantation dose is 2e15 cm.sup.−2, and the implantation energy is 5 keV; the implanted ion in drain region (item 8) is As, the implantation dose is 2e15 cm.sup.−2, and the implantation energy is 5 keV. Performing rapid thermal annealing to activate the impurities, as illustrated in FIG. 7.

[0045] 8. Growing the passivation layer (item 9) and the metal (item 10) of back-end-of-line (BEOL) using the same process as CMOS BEOL to obtain a tunnel field effect transistor with the structure shown in FIG. 1.

[0046] Although the present invention has been disclosed as said in preferred embodiments, it is not limited to the embodiments referred to. The technical scheme of the present invention may be varied and modified by those skilled in the field without departing from the conception and the scope of the present invention using the present method and technical content disclosed as said, or it may be modified into an equivalent embodiment of equivalent changes. Thus, any simple modifications and equivalent changes made to the embodiments based on the technical essence of the present invention without departing from the technical scheme of the present invention are still within the protection scope of the technical scheme of the present invention.