METHOD FOR MANUFACTURING A MICROMECHANICAL COMPONENT
20180339900 ยท 2018-11-29
Inventors
- Achim Breitling (Reutlingen, DE)
- Jan-Peter Stadler (Pfullingen, DE)
- Jochen Reinmuth (Reutlingen, DE)
- Johannes Classen (Reutlingen, DE)
Cpc classification
B81C1/00293
PERFORMING OPERATIONS; TRANSPORTING
B81C1/00984
PERFORMING OPERATIONS; TRANSPORTING
B81C2203/0145
PERFORMING OPERATIONS; TRANSPORTING
B81C1/00269
PERFORMING OPERATIONS; TRANSPORTING
B81B7/02
PERFORMING OPERATIONS; TRANSPORTING
B81C1/00952
PERFORMING OPERATIONS; TRANSPORTING
B81B7/0038
PERFORMING OPERATIONS; TRANSPORTING
B81C2203/0118
PERFORMING OPERATIONS; TRANSPORTING
International classification
B81B7/02
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A method for manufacturing a micromechanical component, including: providing a MEMS wafer and a cap wafer; forming micromechanical structures in the MEMS wafer for at least two sensors; hermetically sealing the MEMS wafer with the cap wafer; forming a first access hole in a first cavity of a first sensor; introducing a defined first pressure into the cavity of the first sensor via the first access hole; closing the first access hole; forming a second access hole in a second cavity of a second sensor; introducing a defined second pressure into the cavity of the second sensor via the second access hole; and closing the second access hole.
Claims
1-15. (canceled)
16. A method for manufacturing a micromechanical component, the method comprising: providing a MEMS wafer and a cap wafer; forming micromechanical structures in the MEMS wafer for at least two sensors; hermetically sealing the MEMS wafer with the cap wafer; forming a first access hole in a first cavity of a first sensor; introducing a defined first pressure into the cavity of the first sensor via the first access hole; closing the first access hole; forming a second access hole in a second cavity of a second sensor; introducing a defined second pressure into the cavity of the second sensor via the second access hole; and closing the second access hole.
17. The method of claim 16, wherein after the MEMS wafer is joined to the cap wafer, H.sub.2-containing gas is removed from the cavity of the second sensor and a defined gas is filled into the cavity of the second sensor.
18. The method of claim 17, wherein after the hydrogen is removed from the cavity of the second sensor, oxygen and/or ozone and/or a defined plasma is/are filled into the cavity of the second sensor.
19. The method of claim 18, wherein in the case of infilling of multiple media, sequential infilling of each medium is carried out.
20. The method of claim 16, wherein an anti-stick layer is filled into the cavity of the second sensor.
21. The method of claim 16, wherein the closing of the MEMS wafer with the cap wafer is carried out with the aid of a wafer bonding process or with the aid of a thin film cap.
22. The method of claim 16, wherein the formation of at least one of the access holes is carried out with the aid of a laser.
23. The method of claim 16, wherein the formation of at least one of the access holes is carried out with the aid of a trenching process.
24. The method of claim 16, wherein the closing of at least one of the access holes is carried out with the aid of the laser.
25. The method of claim 16, wherein the closing of at least one of the access holes is carried out with the aid of a deposition process.
26. The method of claim 16, wherein at least one of the access holes is formed in the MEMS wafer or in the cap wafer.
27. The method of claim 16, wherein an ASIC wafer is used as the cap wafer.
28. The method of claim 16, wherein structures for a third sensor are formed in the MEMS wafer.
29. A micromechanical component, comprising: a MEMS wafer; and a cap wafer; wherein the MEMS wafer and the cap wafer is joined with the aid of a bond connection, at least two sensors being provided with different internal pressures, wherein a different pressure has been provided in the cavities of each of the two sensors via access holes, and wherein the access holes in the cavities of the sensors have been opened and closed in succession.
30. The micromechanical component of claim 29, wherein after the MEMS wafer is joined to the cap wafer, hydrogen is removed from the cavity of the second sensor and a defined gas is filled in.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0046]
[0047]
[0048]
[0049]
[0050]
DETAILED DESCRIPTION
[0051]
[0052] The first sensor may be a rotation rate sensor, and the second sensor may be an acceleration sensor. A compact inertial sensor, in particular for the automotive or consumer electronics sectors, may advantageously be implemented in this way.
[0053]
[0054] A cap wafer 10 and a MEMS wafer 20 are initially provided, structures 23, 24 being formed in MEMS wafer 20 and may be produced by a surface micromechanical technique. A first sensor S1 and a second sensor S2 are thus formed, it being possible for first sensor S1 to be configured as a rotation rate sensor, and second sensor S2 to be configured as an acceleration sensor.
[0055] A bonding partner 11, 21, for example in the form of aluminum and germanium, is apparent on cap wafer 10 and on substrate wafer or MEMS wafer 20, respectively. An insulation layer 22, which may be configured as an oxide material, is also apparent on MEMS wafer 20.
[0056]
[0057] Alternatively, MEMS wafer 20 may be closed with the aid of thin film capping (not illustrated).
[0058] In the cross-sectional view of micromechanical component 100 in
[0059] In
[0060] In the cross-sectional view of micromechanical component 100 in
[0061] H.sub.2-containing gas in the cavity of second sensor S2 is now removed, and the cavity is filled with a suitable medium or gas at a suitable pressure. After this exchange of the gas in the cavity of second sensor S2, it may be advantageous to temper micromechanical component 100 for a certain period of time, with the access channel open to the cavity of second sensor S2. This may advantageously take place under a gas atmosphere via which the discharge or outward diffusion of the light gases is intentionally accelerated, or which reacts with the outwardly diffusing gas.
[0062] For this purpose, it is advantageous to use oxygen or ozone, for example. In addition to pure gases, radicals or ions may also be used with the aid of a plasma treatment. It is also advantageous for the stated media to be able to partially penetrate into the surface of the MEMS element in order to react with the hydrogen there, or, when the media adsorb at the surface, to be able to reduce the discharge energy of the hydrogen dissolved in the solid. Of course, any combinations of the stated conditioning steps may be used to efficiently expel the harmful H.sub.2-containing gas.
[0063] Due to the described targeted exchange of the gas in the acceleration sensor cavity with a harmless gas, it is no longer possible for light gases such as H.sub.2 to diffuse from one cavity to the other. Malfunctions of the rotation rate sensor over its service life may be avoided in this way.
[0064] In the cross-sectional view of micromechanical component 100 in
[0065] As a result, the anti-stick layer is introduced into one of the sensor cavities subsequent to the bonding process, as the result of which the material properties of the anti-stick layer are largely maintained, also after the bonding process. Laborious removal of the anti-stick layer from locations where it is not wanted is thus advantageously not necessary.
[0066] The wafer bonding advantageously takes place in this way, even without an anti-stick layer. It is known that ASC molecules on the bonding frame may have a very adverse effect on the bonding behavior, for example with eutectic AlGe bonds. For this reason, it has traditionally been necessary to selectively remove the ASC layer on the bonding frame from the bonding frame with the aid of special cleaning or bake-out steps. This need is advantageously dispensed with by use of the provided method, so that bond adhesion may be improved compared to the situation with ASC deposition prior to the wafer bonding. The anti-stick layer of the acceleration sensor is not degraded by the high-temperature step of the closure process (wafer bonding, for example), since it is not applied until after this step. The anti-stick properties of the anti-stick layer are therefore fully retained.
[0067] It is apparent from the cross-sectional view of micromechanical component 100 in
[0068] As a result, the configuration in
[0069] It is also advantageously possible with the described method to provide access to a cavity of a third sensor, and optionally even further sensors, of the micromechanical component, and to close the cavity at defined pressures (not illustrated).
[0070] The cross-sectional view in
[0071] All of the opening and closing steps mentioned above may be carried out with the aid of laser machining, since the associated process steps are very quick and therefore cost-effective.
[0072]
[0073]
[0074] A MEMS wafer 20 and a cap wafer 10 are provided in a step 200.
[0075] Micromechanical structures 23, 24 are formed in the MEMS wafer 20 for at least two sensors S1, S2 in a step 210.
[0076] MEMS wafer 20 is hermetically sealed with cap wafer 10 in a step 220.
[0077] A first access hole 12 is formed in a first cavity of a first sensor S1 in a step 230.
[0078] A defined first pressure is introduced into the cavity of first sensor S1 via first access hole 12 in a step 240.
[0079] First access hole 12 is closed in a step 250.
[0080] A second access hole 13 is formed in a second cavity of a second sensor S2 in a step 260.
[0081] A defined second pressure is introduced into the cavity of second sensor S2 via second access hole 13 in a step 270.
[0082] Second access hole 13 is closed in a step 280.
[0083] The sequence of opening and closing the cavities of sensors S1 and S2 is advantageously freely selectable.
[0084] In the provided method, the wafer bonding or the hermetic sealing of the MEMS wafer with the cap wafer may advantageously take place at an arbitrary internal pressure, since both cavities are subsequently reopened anyway and adjusted with regard to the internal pressure. This is advantageous for providing a particularly homogeneous temperature distribution during the wafer bonding.
[0085] As a result, the internal pressure of the rotation rate sensor cannot be adversely affected by ASC molecules, and may therefore be set very low.
[0086] When closure is carried out with the laser, the type of gas and the internal pressure in the acceleration sensor cavity may be flexibly selected and adapted to the particular application requirements.
[0087] In summary, the present invention provides a method for manufacturing a MEMS component that includes two cavities having different internal pressures, in which a first cavity of a first sensor may be closed at a defined first internal pressure, and in which a second cavity of a second sensor may be closed at a defined second internal pressure. The closure of the two access holes of the two cavities takes place sequentially, so that support is advantageously provided which allows defined processing of the cavities of the two sensors.
[0088] Although the present invention has been described above with reference to specific exemplary embodiments, those skilled in the art may also implement specific embodiments of the present invention that are not disclosed or only partly disclosed above, without departing from the core of the present invention.