OPTICAL MODULATION ELEMENT

Abstract

To provide an optical modulation element capable of suppressing electrode loss at a low frequency of 50 GHz or less, and suppressing radiation loss at a high frequency of 50 GHz or more. An optical modulation element comprises: a substrate; and at least one interaction part provided on the substrate. The interaction part includes: first and second optical waveguides formed adjacent to each other on the substrate; and first and second signal electrodes provided so as to oppose the first and second optical waveguides respectively. o ground electrode is provided in a nearby region of the interaction part, and a ground electrode is provided in the vicinity of at least one of an input part and a terminal part electrically connected to each of the first and second signal electrodes.

Claims

1. An optical modulation element comprising: a substrate; and at least one interaction part provided on the substrate, wherein the interaction part includes first and second optical waveguides formed adjacent to each other on the substrate and first and second signal electrodes provided so as to oppose the first and second optical waveguides respectively and to which differential signals are applied, no ground electrode is provided in a nearby region of the interaction part, and a ground electrode is provided in the vicinity of at least one of an input part and a terminal part electrically connected to each of the first and second signal electrodes.

2. The optical modulation element according to claim 1, wherein the input part has first and second signal electrode pads, and the ground electrode includes a first ground electrode pad adjacent to the first signal electrode pad and a second ground electrode pad adjacent to the second signal electrode pad.

3. The optical modulation element according to claim 2, wherein the first and second ground electrode pads are electrically connected to each other.

4. The optical modulation element according to claim 3, wherein the first and second ground electrode pads are electrically connected through a first short-circuit pattern provided on the substrate.

5. The optical modulation element according to claim 2, wherein the first and second ground electrode pads are electrically connected through a ground line in a driver circuit that applies the differential signals to the first and second signal electrode pads.

6. The optical modulation element according to claim 1, wherein the terminal part has first and second terminal electrode pads, and the ground electrode includes a third ground electrode pad adjacent to the first terminal electrode pad and a fourth ground electrode pad adjacent to the second terminal electrode pad.

7. The optical modulation element according to claim 6, wherein the third and fourth ground electrode pads are electrically connected to each other through a second short-circuit pattern formed on the substrate.

8. The optical modulation element according to claim 6, wherein the third ground electrode pad is connected to the first ground electrode pad through a third short-circuit pattern formed on the substrate, and the fourth ground electrode pad is connected to the second ground electrode pad through a fourth short-circuit pattern formed on the substrate.

9. The optical modulation element according to claim 6, wherein the third and fourth ground electrode pads are electrically connected to each other through a ground line in a terminator connected to the first and second terminal electrode pads.

10. The optical modulation element according to claim 1, wherein the nearby region of the interaction part is a region within a range of five times or less an interval between the first and second optical waveguides from the center of the interaction part.

11. The optical modulation element according to claim 1, wherein the substrate is a single crystal substrate, and the first and second optical waveguides are formed of a lithium niobate film formed in a ridge shape on the substrate.

12. The optical modulation element according to claim 1, wherein the interaction part includes: a waveguide layer including the first and second optical waveguides and formed on a main surface of the substrate; a buffer layer formed on at least the upper surfaces of the respective first and second optical waveguides; and an electrode layer including the first and second signal electrodes and formed on the upper surface of the buffer layer, and the first and second signal electrodes are opposite to the respective first and second optical waveguides through the buffer layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0026] FIG. 1 are schematic plan views illustrating an optical modulation element according to a first embodiment of the present invention, in which FIG. 1A illustrates only an optical waveguide, and FIG. 1B illustrates the entire configuration of the optical modulating element including a traveling-wave electrode.

[0027] FIG. 2 is a schematic cross-sectional view of the optical modulation element 1A taken along the line X.sub.1-X.sub.1 in FIGS. 1A and 1B.

[0028] FIGS. 3A and 3B are graphs illustrating frequency characteristics of transmission loss (S.sub.dd21) in optical modulation elements.

[0029] FIG. 4 is a schematic plan view illustrating the configuration of an optical modulation element according to a second embodiment of the present invention.

[0030] FIG. 5 is a schematic plan view illustrating the configuration of an optical modulation element according to a third embodiment of the present invention.

[0031] FIG. 6 is a schematic plan view illustrating the configuration of an optical modulation element according to a fourth embodiment of the present invention.

[0032] FIG. 7 is a schematic plan view illustrating the configuration of an optical modulation element according to a fifth embodiment of the present invention.

[0033] FIG. 8 is a schematic plan view illustrating the configuration of an optical modulation element according to a sixth embodiment of the present invention.

[0034] FIG. 9 is a schematic plan view illustrating the configuration of an optical modulation element according to a seventh embodiment of the present invention.

[0035] FIG. 10 is a schematic plan view illustrating the configuration of an optical modulation element according to an eighth embodiment of the present invention.

[0036] FIG. 11 is a schematic plan view illustrating the configuration of an optical modulation element according to a ninth embodiment of the present invention.

[0037] FIGS. 12A and 12B are schematic cross-sectional view illustrating a structure of a conventional optical modulation element.

MODE FOR CARRYING OUT THE INVENTION

[0038] Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

[0039] FIG. 1 are schematic plan views illustrating an optical modulation element according to a first embodiment of the present invention. FIG. 1A illustrates only an optical waveguide, and FIG. 1B illustrates the entire configuration of the optical modulating element including a traveling-wave electrode.

[0040] As illustrated in FIGS. 1A and 1B, an optical modulation element 1A includes a Mach-Zehnder optical waveguide 10 formed on a substrate 2 and having first and second optical waveguides 10a and 10b provided in parallel to each other, a first signal electrode 7a provided along the first optical waveguide 10a, a second signal electrode 7b provided along the second optical waveguide 10b, a first bias electrode 9a provided along the first optical waveguide 10a, and a second bias electrode 9b provided along the second optical waveguide 10b. The first and second signal electrodes 7a and 7b constitute an interaction part MZ of the Mach-Zehnder optical modulation element together with the first and second optical waveguides 10a and 10b.

[0041] The Mach-Zehnder optical waveguide 10 is an optical waveguide having a Mach-Zehnder interferometer structure. The Mach-Zehnder optical waveguide 10 has the first and second optical waveguides 10a and 10b which are branched from a single input waveguide 10i at a demultiplexer 10c and merged into a single output waveguide 10o at a multiplexer 10d. Input light Si is demultiplexed at the demultiplexer 10c. The demultiplexed signals travel through the first and second optical waveguides 10a and 10b, respectively, and multiplexed at the multiplexer 10d. The multiplexed signal is then output from the output waveguide 10o as a modulation signal So.

[0042] The first and second signal electrodes 7a and 7b are linear electrode patterns overlapping the first and second optical waveguides 10a and 10b, respectively, in a plan view. Both ends of each of the first and second signal electrodes 7a and 7b are drawn to the vicinity of the outer peripheral end of the substrate 2. More specifically, one ends of the first and second signal electrodes 7a and 7b are drawn to the vicinity of the edge of the substrate 2 through lead-out parts 7a.sub.1 and 7b.sub.1 and electrically connected to first and second signal electrode pads 7a.sub.3 and 7b.sub.3 provided in the vicinity of the edge of the substrate 2. The other ends of the first and second signal electrodes 7a and 7b are drawn to the vicinity of the edge of the substrate 2 through lead-out parts 7a.sub.2 and 7b.sub.2 and electrically connected to first and second terminal electrode pads 7a.sub.4 and 7b.sub.4 provided in the vicinity of the edge of the substrate 2.

[0043] The first and second signal electrode pads 7a.sub.3 and 7b.sub.3 at the one ends of the first and second signal electrodes 7a and 7b each serve as a signal input terminal and is connected to a driver circuit. The first and second terminal electrode pads 7a.sub.4 and 7b.sub.4 at the other ends of the first and second signal electrodes 7a and 7b are connected to each other through a terminal resistor 12. As a result, the first and second signal electrodes 7a and 7b function as a differential coplanar traveling-wave electrode.

[0044] The first and second bias electrodes 9a and 9b are provided independently of the first and second signal electrodes 7a and 7b, respectively, so as to apply DC voltage (DC bias) to the first and second optical waveguides 10a and 10b. One ends 9a.sub.1 and 9b.sub.1 of the first and second bias electrodes 9a and 9b are each an input terminal of the DC bias. Although, in the present embodiment, the first and second bias electrodes 9a and 9b are positioned closer to the output terminal side of the Mach-Zehnder optical waveguide 10 than the first and second signal electrodes 7a and 7b, they may be positioned closer to the input terminal side. Further, the first and second bias electrodes 9a and 9b may be omitted, and instead, a modulated signal including superimposed DC bias may be input to the first and second signal electrodes 7a and 7b.

[0045] Differential signals (modulated signals) having the same absolute value but opposite polarities are input to the first and second signal electrode pads 7a.sub.3 and 7b.sub.3. The first and second optical waveguides 10a and 10b are each formed of a material, such as lithium niobate, having electrooptic effect, so that the refractive indices of the first and second optical waveguides 10a and 10b are changed with +Δn and −Δn by an electric field applied to the first and second optical waveguides 10a and 10b, with the result that a phase difference between the pair of optical waveguides is changed. A signal light modulated by the change in the phase difference is output from the output waveguide 10o.

[0046] As described above, the optical modulation element 1A according to the present embodiment is of a dual drive type constituted by the pair of signal electrodes, so that it is possible to increase the symmetry of an electric field to be applied to the pair of optical waveguides to thereby reduce the wavelength chirp.

[0047] In the present embodiment, no ground electrode is provided in a nearby region NZ of the interaction part MZ. The nearby region NZ of the interaction part MZ is defined as a region within a range of five times or less (W.sub.1≤5W.sub.0) an interval W.sub.0 between the first and second optical waveguides 10a and 10b spanning in the left and right direction from the center of the interaction part MZ in the width direction thereof. The ground electrode refers to an electrode serving as an electric potential reference point.

[0048] The ground electrode is typically provided in the vicinity of the first and second signal electrodes 7a and 7b constituting the interaction part MZ (see FIG. 12B, etc.). However, it becomes difficult to ensure a sufficient width or area for the ground electrode due to miniaturization of an optical modulation element, and a ground electrode having an insufficient size may deteriorate high-frequency characteristics. However, in the present embodiment, the ground electrode is omitted from the nearby region NZ of the interaction part MZ, so that high-frequency characteristics do not deteriorate even with the miniaturization, and the interaction part MZ can be easily multiplexed.

[0049] For descriptive convenience, in FIG. 1, the interval W.sub.0 between the first and second optical waveguides 10a and 10b is sufficiently larger than the actual size. The actual waveguide interval W.sub.0 is as very small as 5 μm to 50 μm. On the other hand, the lengths of the lead-out parts 7a.sub.1 and 7a.sub.2 at the one end and the other end of the first signal electrode 7a and the lengths of the lead-out parts 7b.sub.1 and 7b.sub.2 at the one end and the other end of the second signal electrode 7b are each 100 μm or more. Thus, the first and second signal electrode pads 7a.sub.3 and 7b.sub.3, first and second ground electrode pads 8a.sub.1 and 8b.sub.1, first and second terminal electrode pads 7a.sub.4 and 7b.sub.4, and third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are positioned outside the nearby region NZ of the interaction part MZ and spaced apart from the interaction part MZ.

[0050] The ground electrode may be provided on the back surface side of the substrate 2 for stabilization of a reference potential. Although the ground electrode is required not to be provided in the nearby region NZ of the interaction part MZ as described above, the back surface side of the substrate 2 is not addressed. That is, the ground electrode may be provided in the nearby region NZ of the interaction part MZ on the back surface side of the substrate 2.

[0051] On the other hand, first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are provided in the vicinity of the input parts of the respective first and second signal electrodes 7a and 7b which are positioned outside the nearby region NZ of the interaction part MZ. The first ground electrode pad 8a.sub.1 is provided adjacent to the first signal electrode pad 7a.sub.3 constituting the input part of the first signal electrode 7a, and the second ground electrode pad 8b.sub.1 is provided adjacent to the second signal electrode pad 7b.sub.3 constituting the input part of the second signal electrode 7b.

[0052] Third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are provided in the vicinity of the terminal parts of the respective first and second signal electrodes 7a and 7b which are positioned outside the nearby region NZ of the interaction part MZ like the input parts of the respective first and second signal electrodes 7a and 7b. The third ground electrode pad 8a.sub.2 is provided adjacent to the first terminal electrode pad 7a.sub.4 constituting the terminal part of the first signal electrode 7a, and the fourth ground electrode pad 8b.sub.2 is provided adjacent to the second terminal electrode pad 7b.sub.4 constituting the terminal part of the second signal electrode 7b.

[0053] In the present embodiment, the first ground electrode pad 8a.sub.1 and second ground electrode pad 8b.sub.1 are electrically connected to each other through a short-circuit pattern 8c.sub.1 (first short-circuit pattern) provided in the same electrode layer as that of the first and second ground electrode patterns 8a.sub.1 and 8b.sub.1. Similarly, the third ground electrode pad 8a.sub.2 and the fourth ground electrode pad 8b.sub.2 are electrically connected to each other through a short-circuit pattern 8c.sub.2 (second short-circuit pattern) provided in the same electrode layer as that of the third and fourth ground electrode patterns 8a.sub.2 and 8b.sub.2. The short-circuit patterns 8c.sub.1 and 8c.sub.2 are formed along the edge of the substrate 2, and thus the first and second signal electrode pads 7a.sub.3, 7b.sub.3 and the first and second terminal electrode pads 7a.sub.4 and 7b.sub.4 are disposed inside the edge of the substrate 2. The two ground electrode pads which are close to each other are thus short-circuited, and hence, a reference potential at the ground electrode pad can be stabilized to thereby improve high-frequency characteristics.

[0054] FIG. 2 is a schematic cross-sectional view of the optical modulation element 1A taken along the line X.sub.1-X.sub.1 in FIGS. 1A and 1B.

[0055] As illustrated in FIG. 2, the optical modulation element 1A according to the present embodiment has a multilayer structure including a substrate 2, a waveguide layer 3, a protective layer 4, a buffer layer 5, and an electrode layer 6, which are laminated in this order.

[0056] The substrate 2 is, e.g., a sapphire substrate, and the waveguide layer 3 of an electrooptic material, such as a lithium niobate film, is formed on the main surface of the substrate 2. The waveguide layer 3 has the first and second optical waveguides 10a and 10b each formed by a ridge part 3r. A width W.sub.10 of each of the first and second optical waveguides 10a and 10b can be set to, e.g., 1 μm.

[0057] The protective layer 4 is formed in an area not overlapping the first and second optical waveguides 10a and 10b in a plan view. The protective layer 4 covers the entire area of the upper surface of the waveguide layer 3 excluding portions where the ridge parts 3r are formed, and the side surfaces of each of the ridge parts 3r are also covered with the protective layer 4, so that scattering loss caused due to the roughness of the side surfaces of the ridge part 3r can be prevented. The thickness of the protective layer 4 is substantially equal to the height of the ridge part 3r of the waveguide layer 3. There is no particular restriction on the material of the protective layer 4 and, for example, silicon oxide (SiO.sub.2) may be used.

[0058] The buffer layer 5 is formed on the upper surfaces of the ridge parts 3r of the waveguide layer 3 so as to prevent light propagating through the first and second optical waveguides 10a and 10b from being absorbed by the first and second signal electrodes 7a and 7b. The buffer layer 5 is preferably formed of a material having a lower refractive index than those of the waveguide layer 3 and a high transparency, such as Al.sub.2O.sub.3, SiO.sub.2, LaAlO.sub.3, LaYO.sub.3, ZnO, HfO.sub.2, MgO, or Y.sub.2O.sub.3. The thickness of the buffer layer 5 on the upper surface of the ridge part 3r may be about 0.2 μm to 1 μm. The buffer layer 5 is more preferably formed of a material having a high dielectric constant. In the present embodiment, although the buffer layer 5 covers not only the upper surfaces of the respective first and second optical waveguides 10a and 10b, but also the entire underlying surface including the upper surface of the protective layer 4, it may be patterned so as to selectively cover only the vicinity of the upper surfaces of the first and second optical waveguides 10a and 10b. Further, the buffer layer 5 may be directly formed on the upper surface of the waveguide layer 3 with the protective layer 4 omitted.

[0059] The film thickness of the buffer layer 5 is preferably as large as possible in view of reduction of light absorption of an electrode and preferably as small as possible in view of application of a high electric field to the optical waveguide. The light absorption and applied voltage of an electrode have a trade-off relation, so that it is necessary to set an adequate film thickness according to the purpose. The dielectric constant of the buffer layer 5 is preferably as high as possible, because the higher the dielectric constant thereof, the more VπL (index representing electric field efficiency) is reduced. Further, the refractive index of the buffer layer 5 is preferably as low as possible, because the lower the refractive index thereof, the thinner the buffer layer 5 can be. In general, a material having a high dielectric constant has a higher refractive index, so that it is important to select a material having a high dielectric constant and a relatively low refractive index considering the balance therebetween. For example, Al.sub.2O.sub.3 has a specific dielectric constant of about 9 and a refractive index of about 1.6 and is thus preferable. LaAlO.sub.3 has a specific dielectric constant of about 13 and a refractive index of about 1.7, and LaYO.sub.3 has a specific dielectric constant of about 17 and a refractive index of about 1.7 and are thus particularly preferable.

[0060] The electrode layer 6 is provided with the first signal electrode 7a and second signal electrode 7b. The first signal electrode 7a is provided overlapping the ridge part 3r corresponding to the first optical waveguide 10a so as to modulate the light traveling inside the first optical waveguide 10a and is opposed to the first optical waveguide 10a through the buffer layer 5. The second signal electrode 7b is provided overlapping the ridge part 3r corresponding to the second optical waveguide 10b so as to modulate the light traveling inside the second optical waveguide 10b and is opposed to the second optical waveguide 10b through the buffer layer 5.

[0061] As illustrated in FIG. 2, in the cross-section perpendicular to the extending direction of first and second optical waveguides 10a and 10b, an electrode structure is left-right symmetric. Thus, the magnitudes of electric fields applied from the first and second signal electrodes 7a and 7b to the respective first and second optical waveguides 10a and 10b are made the same as much as possible, whereby the wavelength chirp can be reduced.

[0062] The waveguide layer 3 is not particularly limited as long as it is made of an electrooptic material and is preferably made of lithium niobate (LiNbO.sub.3). This is because lithium niobate has a large electrooptic constant and is thus suitable as the constituent material of an electrooptic device such as an optical modulation element. An explanation will now be given of the configuration of the present embodiment, where the waveguide layer 3 is a lithium niobate film.

[0063] Although the substrate 2 is not particularly limited as long as it has a lower refractive index than lithium niobate, the substrate 2 is preferably a substrate on which the lithium niobate film can be formed as an epitaxial film. Specifically, the substrate 2 is preferably a sapphire single crystal substrate or a silicon single crystal substrate. The crystal orientation of the single crystal substrate is not particularly limited. The lithium niobate film can be easily formed as a c-axis oriented epitaxial film on single crystal substrates having different crystal orientations. Since the c-axis oriented lithium niobate film has three-fold symmetry, the underlying single crystal substrate preferably has the same symmetry. Thus, when the sapphire single crystal substrate is used as the substrate 2, it preferably has a c-plane, and when the silicon single crystal substrate is used as the substrate 2, it preferably has a (111) surface.

[0064] The epitaxial film refers to a film having the crystal orientation of the underlying substrate or film. When the film in-plane surface is defined as an X-Y plane, and the film thickness direction is as a Z-axis, the crystal is uniformly oriented along the X-, Y-, and Z-axes. For example, an epitaxial film can be confirmed by first measuring the peak intensity at the orientation position by 2θ-θ X-ray diffraction and secondly observing poles.

[0065] Specifically, first, in the 2θ-θ X-ray diffraction measurement, all the peak intensities except for the peak intensity on a target surface must be equal to or less than 10%, preferably equal to or less than 5%, of the maximum peak intensity on the target surface. For example, in a c-axis oriented epitaxial lithium niobate film, the peak intensities except for the peak intensity on a (00L) surface are equal to or less than 10%, preferably equal to or less than 5%, of the maximum peak intensity on the (00L) surface. (00L) is a general term for (001), (002), and other equivalent surfaces.

[0066] Secondly, poles must be observed in the measurement. Under the condition where the peak intensities are measured at the first orientation position, only the orientation in a single direction is proved. Even if the first condition is satisfied, in the case of nonuniformity in the in-plane crystalline orientation, the X-ray intensity is not increased at a particular angle, and poles cannot be observed. Since LiNbO.sub.3 has a trigonal crystal system, single crystal LiNbO.sub.3 (014) has 3 poles.

[0067] For the lithium niobate film, it is known that crystals rotated by 180° about the c-axis are epitaxially grown in a symmetrically coupled, twin crystal state. In this case, three poles are symmetrically coupled to form six poles. When the lithium niobate film is formed on a single crystal silicon substrate having a (100) surface, the substrate has four-fold symmetry, and 4×3=12 poles are observed. In the present invention, the lithium niobate film epitaxially grown in the twin crystal state is also considered to be an epitaxial film.

[0068] The lithium niobate film has a composition of LixNbAyOz. A denotes an element other than Li, Nb, and O, wherein x ranges from 0.5 to 1.2, preferably 0.9 to 1.05, y ranges from 0 to 0.5, and z ranges from 1.5 to 4, preferably 2.5 to 3.5. Examples of the element A include K, Na, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ti, Zr, Hf, V, Cr, Mo, W, Fe, Co, Ni, Zn, Sc, and Ce, alone or a combination of two or more of them.

[0069] The lithium niobate film preferably has a film thickness of 2 μm or less. This is because a high-quality lithium niobate film having a thickness more than 2 μm is difficult to form. The lithium niobate film having an excessively small thickness cannot completely confine light in it, disadvantageously allowing the light to penetrate through the substrate 2 and/or the buffer layer 5. Application of an electric field to the lithium niobate film may therefore cause a change in the effective refractive index of the optical waveguide (10a, 10b) to decrease. Thus, the lithium niobate film preferably has a film thickness that is at least approximately one-tenth of the wavelength of light to be used.

[0070] The lithium niobate film is preferably formed using a film formation method, such as sputtering, CVD or sol-gel process. Application of an electric field in parallel to the c-axis of the lithium niobate that is oriented perpendicular to the main surface of the substrate 2 can change the optical refractive index in proportion to the electric field. In the case of the single crystal substrate made of sapphire, the lithium niobate film can be directly epitaxially grown on the sapphire single crystal substrate. In the case of the single crystal substrate made of silicon, the lithium niobate film is epitaxially grown on a clad layer (not illustrated). The clad layer (not illustrated) has a refractive index lower than that of the lithium niobate film and should be suitable for epitaxial growth. For example, a high-quality lithium niobate film can be formed on a clad layer (not illustrated) made of Y.sub.2O.sub.3.

[0071] As a formation method for the lithium niobate film, there is known a method of thinly polishing or slicing the lithium niobate single crystal substrate. This method has an advantage that characteristics same as those of the single crystal can be obtained and can be applied to the present invention.

[0072] A width W.sub.7 of the first and second signal electrodes 7a and 7b is slightly larger than a ridge width W.sub.10 of the ridge-shaped first and second optical waveguides 10a and 10b of a lithium niobate film. To concentrate an electric field from the first and second signal electrodes 7a and 7b on the first and second optical waveguides 10a and 10b, the width W.sub.7 of the first and second signal electrodes 7a and 7b is preferably 1.1 times to 15 times, more preferably, 1.5 times to 10 times the ridge width W.sub.10 of the second optical waveguide 10b. The interval between signal electrodes refers to the distance between the width direction center of the first signal electrode 7a and the width direction center of the second signal electrode 7b. The interval between the waveguides refers to the distance between the width direction center of the first optical waveguide 10a to the width direction center of the second optical waveguide 10b. In the present embodiment, the interval between the signal electrodes and the interval between the optical waveguides are substantially equal to each other.

[0073] No ground electrode is provided in a part of the electrode layer 6 positioned in the nearby region NZ of the interaction part MZ. When the ground electrode is provided in an electrode isolation region D.sub.0 between the first and second signal electrodes 7a and 7b or nearby regions D.sub.1a and D.sub.1b outside the respective first and second signal electrodes 7a and 7b, ripple or crosstalk is increased to deteriorate high-frequency characteristics. Such deterioration in high-frequency characteristics is considered to be caused by the fact that the width or area of the ground electrode cannot sufficiently be ensured due to miniaturization of an optical modulation element to result in an unstable ground potential. When no ground electrode is provided as in the present embodiment, ripple or crosstalk can be reduced to thereby improve high-frequency characteristics.

[0074] The above-described first to fourth ground electrode pads 8a.sub.1, 8b.sub.1, 8a.sub.2, 8b.sub.2 and short-circuit patterns 8c.sub.1, 8c.sub.2 are provided in the electrode layer 6 together with the signal electrode pads 7a.sub.3, 7b.sub.3 of the first and second signal electrodes 7a and 7b and the first and second terminal electrode pads 7a.sub.4, 7b.sub.4. These ground electrodes are provided outside the nearby region NZ of the interaction part MZ and thus do not cause ripple or crosstalk at a low frequency of 50 GHz or less. Further, radiation loss at a high frequency of 50 GHz or more can be reduced.

[0075] FIGS. 3A and 3B are graphs illustrating frequency characteristics of transmission loss (S.sub.dd21) in optical modulation elements.

[0076] FIG. 3A illustrates the transmission loss in the optical modulation element having a conventional electrode structure in which the ground electrode is provided in the nearby region NZ of the interaction part MZ. As indicated by the curve GL.sub.1 of FIG. 3A, ripple or crosstalk occurs at a low frequency of 50 GHz or less. On the other hand, as indicated by the curves GL.sub.2 in the graphs of FIGS. 3A and 3B, in an optical modulation element in which the ground electrode is omitted from the entire substrate surface including the nearby region NZ of the interaction part MZ, ripple or crosstalk does not occur at a low frequency of 50 GHz or less. However, no ground electrode is provided in the vicinity of the input and terminal parts of each of the first and second signal electrodes 7a and 7b, so that the transmission loss increases at a high frequency of 50 GHz or more.

[0077] FIG. 3B illustrates the transmission loss of the optical modulation element according to the present embodiment, in which the ground electrode is not provided in the nearby region NZ of the interaction part MZ but provided in the vicinity of the input and terminal parts of each of the first and second signal electrodes 7a and 7b. As indicated by the curve GL.sub.3 of FIG. 3B, not only that ripple or crosstalk is reduced at a low frequency of 50 GHz or less, but also that the transmission loss is reduced at a high frequency of 50 GHz or more.

[0078] As described above, in the optical modulation element 1A according to the present embodiment, no ground electrode is provided in the nearby region NZ of the interaction part MZ, so that electrode loss can be reduced to improve the efficiency of an electric field to be applied to the optical waveguide, thereby allowing low voltage driving. Further, in the optical modulation element 1A according to the present embodiment, the ground electrode is provided in the vicinity of at least one of the input and terminal parts of each of the first and second signal electrodes 7a and 7b outside the nearby region NZ of the interaction part MZ, so that radiation loss at a high frequency of 50 GHz or more can be reduced. Hence, an optical modulation element with improved high-frequency characteristics can be provided.

[0079] FIG. 4 is a schematic plan view illustrating the configuration of an optical modulation element according to a second embodiment of the present invention.

[0080] As illustrated in FIG. 4, an optical modulation element 1B is featured as follows: the first and third ground electrode pads 8a.sub.1 and 8a.sub.2 on the respective input part and terminal part sides of the first signal electrode 7a are electrically connected to each other through a short-circuit pattern 8c.sub.3 (third short-circuit pattern) surrounding the interaction part MZ; and the second and fourth ground electrode pads 8b.sub.1 and 8b.sub.2 on the respective input part and terminal part sides are electrically connected to each other through a short-circuit pattern 8c.sub.4 (fourth short-circuit pattern). Further, the first and second signal electrode pads 7a.sub.3 and 7b.sub.3 are disposed close to the edge of the substrate 2, and the first and second terminal electrode pads 7a.sub.4 and 7b.sub.4 are also disposed close to the edge of the substrate 2. Other configurations are the same as those of the first embodiment.

[0081] Like the first to fourth ground electrode pads 8a.sub.1, 8b.sub.1, 8a.sub.2, and 8b.sub.2, the short-circuit patterns 8c.sub.3 and 8c.sub.4 are disposed outside the nearby region NZ of the interaction part MZ. Thus, no ground electrode is provided in the nearby region NZ of the interaction part MZ. According to the present embodiment, radiation loss at a high frequency of 50 GHz or more can be reduced as in the first embodiment.

[0082] In the present embodiment, although the first and second ground electrode pads 8a.sub.1 and 8b.sub.1 on the input part side are not connected to each other through a short-circuit pattern, and the third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 on the terminal part side are not connected to each other through a short-circuit pattern, the same configuration as that of the first embodiment may be employed. In this case, the first and second signal electrode pads 7a.sub.3, 7b.sub.3 and the first and second terminal electrode pads 7a.sub.4, 7b.sub.4 are disposed apart from the edge of the substrate 2.

[0083] FIG. 5 is a schematic plan view illustrating the configuration of an optical modulation element according to a third embodiment of the present invention.

[0084] As illustrated in FIG. 5, an optical modulation element 1C is featured as follows: the first and second ground electrode pads 8a.sub.1 and 8b.sub.1 on the input part sides of the respective first and second signal electrodes 7a and 7b are electrically connected to each other through respective contact plugs 8d.sub.1 and 8d.sub.2 penetrating the substrate 2 and a short-circuit pattern 8c.sub.5 formed on the back side of the substrate 2; and the third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 on the terminal part sides of the respective first and second signal electrodes 7a and 7b are electrically connected to each other through respective contact plugs 8d.sub.3 and 8d.sub.4 penetrating the substrate 2 and a short-circuit pattern 8c.sub.6 formed on the back side of the substrate 2. The short-circuit patterns 8c5 and 8c6 may be formed as a single ground pattern and, alternatively, a ground pattern serving as the short-circuit patterns 8c5 and 8c6 may be formed on the entire back surface of the substrate 2. Further, the first and second signal electrode pads 7a.sub.3 and 7b.sub.3 are disposed close to the edge of the substrate 2, and the first and second terminal electrode pads 7a.sub.4 and 7b.sub.4 are also disposed close to the edge of the substrate 2. Other configurations are the same as those of the first embodiment.

[0085] Like the first to fourth ground electrode pads 8a.sub.1, 8b.sub.1, 8a.sub.2, and 8b.sub.2, the short-circuit patterns 8c.sub.5 and 8c.sub.6 are disposed outside the nearby region NZ of the interaction part MZ. Thus, no ground electrode is provided in the nearby region NZ of the interaction part MZ. According to the present embodiment, radiation loss at a high frequency of 50 GHz or more can be reduced as in the first embodiment.

[0086] FIG. 6 is a schematic plan view illustrating the configuration of an optical modulation element according to a fourth embodiment of the present invention.

[0087] As illustrated in FIG. 6, an optical modulation element 1D is featured as follows: the first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are electrically connected to each other through a ground line in a driver circuit 200 connected to the input parts of the respective first and second signal electrodes 7a and 7b; and the third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are electrically connected to each other through a ground line in a terminator 300 connected to the terminal parts of the respective first and second signal electrodes 7a and 7b. Further, the first and second signal electrode pads 7a.sub.3 and 7b.sub.3 are disposed close to the edge of the substrate 2, and the first and second terminal electrode pads 7a.sub.4 and 7b.sub.4 are also disposed close to the edge of the substrate 2. Other configurations are the same as those of the first embodiment.

[0088] The ground line in the driver circuit 200 and the ground line in the terminator 300 are disposed outside the nearby region NZ of the interaction part MZ. Thus, no ground electrode is provided in the nearby region NZ of the interaction part MZ. According to the present embodiment, radiation loss at a high frequency of 50 GHz or more can be reduced as in the first embodiment.

[0089] FIG. 7 is a schematic plan view illustrating the configuration of an optical modulation element according to a fifth embodiment of the present invention.

[0090] As illustrated in FIG. 7, an optical modulation element 1E is a modification of the optical modulation element 1D according to the fourth embodiment and is featured in that the driver circuit 200 and terminator 300 illustrated in FIG. 6 are flip-chip mounted on the substrate 2. Other configurations are the same as those of the fourth embodiment. Thus, the optical modulation element 1E according to the present embodiment can achieve not only the same effect as that in the fourth embodiment but also miniaturization of the entire optical modulation element.

[0091] FIG. 8 is a schematic plan view illustrating the configuration of an optical modulation element according to a sixth embodiment of the present invention.

[0092] As illustrated in FIG. 8, an optical modulation element 1F is featured in that the Mach-Zehnder optical waveguide 10 is constituted by a combination of a linear section and a curved section. Specifically, the Mach-Zehnder optical waveguide 10 has first to third linear sections 10e.sub.1, 10e.sub.2, and 10e.sub.3 arranged parallel to one another, a first curved section 10f.sub.1 connecting the first and second linear sections 10e.sub.1 and 10e.sub.2, and a second curved section 10f.sub.2 connecting the second and third linear sections 10e.sub.2 and 10e.sub.3. The first and second curved sections 10f.sub.1 and 10f.sub.2 are concentrically arranged in a semicircular shape so as to turn the traveling direction of the optical waveguide by 180°. Other configurations are the same as those of the first embodiment.

[0093] In the present embodiment, most of the first linear section 10e.sub.1 of the Mach-Zehnder optical waveguide 10, whole of the second linear section 10e.sub.2, whole of the first and second curved sections 10f.sub.1 and 10f.sub.2, and a part of the third linear section 10e.sub.3 constitute the interaction part MZ together with the first and second signal electrodes 7a and 7b. The input light Si is input to one end of the first linear section 10e.sub.1, travels from the one end of the first linear section 10e.sub.1 toward the other end thereof, makes a U-turn at the first curved section 10f.sub.1, travels from one end of the second linear section 10e.sub.2 toward the other end thereof in the direction opposite to that in the first linear section 10e.sub.1, makes a U-turn at the second curved section 10f.sub.2, and travels from one end of the third linear section 10e.sub.3 toward the other end thereof in the same direction as that in the first linear section 10e.sub.1.

[0094] The Mach-Zehnder optical modulation element has a problem of a long element length in practical applications. However, by folding the optical waveguide as illustrated, the element length can be significantly reduced, obtaining a remarkable effect for miniaturization. In particular, an optical waveguide formed of the lithium niobate film is featured in that it has a small loss even when the curvature radius of the curved section is reduced up to about 50 μm and is thus suitable for the present embodiment.

[0095] In the present embodiment as well, no ground electrode is provided in the nearby region NZ of the interaction part MZ. Providing a ground electrode having an insufficient size in the vicinity of the first and second signal electrodes 7a and 7b constituting the interaction part MZ may deteriorate high-frequency characteristics. In particular, when the optical waveguide has the first and second curved sections 10f.sub.1 and 10f.sub.2, and the ground electrode is provided in the vicinity of the first and second curved sections 10f.sub.1 and 10f.sub.2, a high-frequency signal increasingly leaks at the curved section, making high-frequency characteristics likely to be deteriorated. However, the ground electrode is omitted in the present embodiment, so that it is possible to prevent deterioration in high-frequency characteristics caused by the ground electrode and to facilitate miniaturization and multiplexing of the optical modulation element.

[0096] Further, in the present embodiment as well, the ground electrode is provided in the vicinity of the input and terminal parts of each of the first and second signal electrodes 7a and 7b which are positioned outside the nearby region NZ of the interaction part MZ. Specifically, the first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are provided in the vicinity of the input parts of the respective first and second signal electrodes 7a and 7b which are remote from the interaction part MZ. The first ground electrode pad 8a.sub.1 is provided adjacent to the first signal electrode pad 7a.sub.3 constituting the input part of the first signal electrode 7a, and the second ground electrode pad 8b.sub.1 is provided adjacent to the second signal electrode pad 7b.sub.3 constituting the input part of the second signal electrode 7b. The first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are connected to each other through the short-circuit pattern 8c.sub.1.

[0097] As in the input parts of the first and second signal electrodes 7a and 7b, the third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are provided in the vicinity of the terminal parts of the respective first and second signal electrodes 7a and 7b which are remote from the interaction part MZ. The third ground electrode pad 8a.sub.2 is provided adjacent to the first terminal electrode pad 7a.sub.4 constituting the terminal part of the first signal electrode 7a, and the fourth ground electrode pad 8b.sub.2 is provided adjacent to the second terminal electrode pad 7b.sub.4 constituting the terminal part of the second signal electrode 7b. The third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are connected to each other through the short-circuit pattern 8c.sub.2.

[0098] As described above, in the optical modulation element 1F, no ground electrode is provided in the nearby region NZ of the interaction part MZ but provided in the vicinity of the input and terminal parts of the first and second signal electrodes 7a and 7b which are positioned outside the nearby region NZ, so that radiation loss at a high frequency of 50 GHz or more can be reduced. Hence, an optical modulation element with improved high-frequency characteristics can be provided.

[0099] FIG. 9 is a schematic plan view illustrating the configuration of an optical modulation element according to a seventh embodiment of the present invention.

[0100] As illustrated in FIG. 9, an optical modulation element 1G according to the present embodiment is featured in that it has a two-channel array structure in which two interaction parts of the Mach-Zehnder optical modulation element are arranged and uses first and second interaction parts MZ.sub.1 and MZ.sub.2 to perform quadrature phase shift keying (QPSK) or cross quadrature amplitude modulation (xQAM) for the input light Si. That is, the optical modulation element 1G according to the present embodiment is an IQ optical modulation element constituted using the first and second interaction parts MZ.sub.1 and MZ.sub.2, and a phase shifter 10 g is provided on the output side of the second interaction part MZ.sub.2. The configuration of each of the interaction parts MZ.sub.1 and MZ.sub.2 is the same as that of the single interaction part MZ of the Mach-Zehnder optical modulation element illustrated in FIG. 1. Different differential signals are applied respectively to a pair of RF signal input terminals (first and second signal electrode pads 7a.sub.3 and 7b.sub.3) of the first and second interaction parts MZ.sub.1 and MZ.sub.2.

[0101] The input waveguide 10i constituted by a single optical waveguide is divided into four parts at two-stage demultiplexer 10c to form two pairs of two optical waveguides. That is, first and second optical waveguides 10a and 10b constituting the first interaction part MZ.sub.1 and first and second optical waveguides 10a and 10b constituting the second interaction part MZ.sub.2 are formed. At the output side, the optical waveguides are combined into a single output waveguide 10o at two-stage multiplexer 10d.

[0102] In the present embodiment as well, no ground electrode is provided in the vicinity of the nearby region NZ of the first and second interaction parts MZ.sub.1 and MZ.sub.2. In particular, no ground electrode is provided in an inter-channel region between the second signal electrode 7b of the first interaction part MZ.sub.1 and the first signal electrode 7a of the second interaction part MZ.sub.2. When an optical modulation element is miniaturized and multiplexed, it becomes difficult to provide a ground electrode having a sufficient width or sufficient area in the inter-channel region, and a ground electrode having an insufficient size may deteriorate high-frequency characteristics. However, in the present embodiment, the ground electrode is omitted, so that high-frequency characteristics do not deteriorate even with miniaturization, and the optical modulation element can be easily multiplexed.

[0103] On the other hand, the ground electrode is provided in the vicinity of the input and terminal parts of each of the first and second signal electrodes 7a and 7b which are remote from the nearby region NZ of the first and second interaction parts MZ.sub.1 and MZ.sub.2. Specifically, the first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are provided in the vicinity of the input parts of the respective first and second signal electrodes 7a and 7b which are remote from the first and second interaction parts MZ.sub.1 and MZ.sub.2. The first ground electrode pad 8a.sub.1 is provided adjacent to the first signal electrode pad 7a.sub.3 constituting the input part of the first signal electrode 7a, and the second ground electrode pad 8b.sub.1 is provided adjacent to the second signal electrode pad 7b.sub.3 constituting the input part of the second signal electrode 7b. The first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are connected to each other through the short-circuit pattern 8c.sub.1.

[0104] As in the input parts of the first and second signal electrodes 7a and 7b, the third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are provided in the vicinity of the terminal parts of the respective first and second signal electrodes 7a and 7b which are remote from the nearby region NZ of the first and second interaction parts MZ.sub.1 and MZ.sub.2. The third ground electrode pad 8a.sub.2 is provided adjacent to the first terminal electrode pad 7a.sub.4 constituting the terminal part of the first signal electrode 7a, and the fourth ground electrode pad 8b.sub.2 is provided adjacent to the second terminal electrode pad 7b.sub.4 constituting the terminal part of the second signal electrode 7b. The third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are connected to each other through the short-circuit pattern 8c.sub.2.

[0105] As described above, in the optical modulation element 1G according to the present embodiment, no ground electrode is provided in the nearby region NZ of the first and second interaction parts MZ.sub.1 and MZ.sub.2 but provided in the vicinity of the input and terminal parts of the first and second signal electrodes 7a and 7b which are positioned outside the nearby region NZ, so that radiation loss at a high frequency of 50 GHz or more can be reduced. Hence, an optical modulation element with improved high-frequency characteristics can be provided.

[0106] FIG. 10 is a schematic plan view illustrating the configuration of an optical modulation element according to an eighth embodiment of the present invention.

[0107] As illustrated in FIG. 10, an optical modulation element 1H according to the present embodiment is featured in that it has a four-channel array structure in which four interaction parts of the Mach-Zehnder optical waveguide are arranged and uses interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4 to perform dual polarization quadrature phase shift keying (DP-QPSK). The first and second interaction parts MZ.sub.1 and MZ.sub.2 constitute a first IQ modulator and the third and fourth interaction parts MZ.sub.3 and MZ.sub.4 constitute a second IQ modulator. An output of each of the first and second IQ modulators is output through a polarization multiplexing waveguide 10h. The configuration of each of the interaction parts MZ.sub.2 to MZ.sub.4 is the same as that of the single interaction part of the optical modulation element 1A illustrated in FIG. 1.

[0108] In the present embodiment as well, no ground electrode is provided in the nearby region NZ of the first to fourth interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4. In particular, no ground electrode is provided in an inter-channel region between the second signal electrode 7b and the first signal electrode 7a adjacent to each other and belonging to different interaction parts. When an optical modulation element is miniaturized and multiplexed, it becomes difficult to provide a ground electrode having a sufficient width or sufficient area in the inter-channel region, and a ground electrode having an insufficient size may deteriorate high-frequency characteristics. However, in the present embodiment, the ground electrode is omitted, so that high-frequency characteristics do not deteriorate even with miniaturization of the optical modulation element, and the optical modulation element can be easily multiplexed.

[0109] On the other hand, the ground electrode is provided in the vicinity of the input and terminal parts of each of the first and second signal electrodes 7a and 7b which are remote from the nearby region NZ of the first to fourth interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4. Specifically, the first and second ground electrode pads 8a.sub.1 and 8b.sub.1 are provided in the vicinity of the input parts of the respective first and second signal electrodes 7a and 7b which are remote from the first to fourth interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4. The first ground electrode pad 8a.sub.1 is provided adjacent to the first signal electrode pad 7a.sub.3 constituting the input part of the first signal electrode 7a, and the second ground electrode pad 8b.sub.1 is provided adjacent to the second signal electrode pad 7b.sub.3 constituting the input part of the second signal electrode 7b.

[0110] As in the input parts of the first and second signal electrodes 7a and 7b, the third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are provided in the vicinity of the terminal parts of the respective first and second signal electrodes 7a and 7b which are remote from the first to fourth interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4. The third ground electrode pad 8a.sub.2 is provided adjacent to the first terminal electrode pad 7a.sub.4 constituting the terminal part of the first signal electrode 7a, and the fourth ground electrode pad 8b.sub.2 is provided adjacent to the second terminal electrode pad 7b.sub.4 constituting the terminal part of the second signal electrode 7b. The third and fourth ground electrode pads 8a.sub.2 and 8b.sub.2 are connected to each other through the short-circuit pattern 8c.sub.2.

[0111] As described above, in the optical modulation element 1H according to the present embodiment, the ground electrode is not provided in the nearby region NZ of the first to fourth interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4 but provided in the vicinity of the input and terminal parts of the first and second signal electrodes 7a and 7b which are remote from the nearby region NZ, so that radiation loss at a high frequency of 50 GHz or more can be reduced. Hence, an optical modulation element with improved high-frequency characteristics can be provided.

[0112] FIG. 11 is a schematic plan view illustrating the configuration of an optical modulation element according to a ninth embodiment of the present invention.

[0113] As illustrated in FIG. 11, an optical modulation element 1I according to the present embodiment is featured in that, in the optical modulation element having the four-channel array structure illustrated in FIG. 10, the first to fourth interaction parts MZ.sub.1, MZ.sub.2, MZ.sub.3, and MZ.sub.4 are each constituted by a combination of a linear section and a curved section. That is, the optical modulation element according to the present embodiment is obtained by combining the optical modulation elements according to the sixth and eighth embodiments.

[0114] In the present embodiment, output from the respective channels are not multiplexed but output individually. Therefore, the Mach-Zehnder optical waveguide 10 has first to fourth output waveguides 10o.sub.1, 10o.sub.2, 10o.sub.3, and 10o.sub.4.

[0115] As described above, when the optical waveguide has the curved section in the multichannel structure, a problem of crosstalk becomes remarkable. However, since no ground electrode is provided in the vicinity of the signal electrode, the crosstalk can be reduced.

[0116] While the preferred embodiments of the present invention have been described, the present invention is not limited to the above embodiments, and various modifications may be made within the scope of the present invention, and all such modifications are included in the present invention.

[0117] For example, in the above respective embodiments, the ground electrode is provided in the vicinity of both the input and terminal parts of each of the first and second signal electrodes 7a and 7b which are remote from the nearby region NZ of the interaction part MZ; however, the ground electrode need not necessarily be provided in the vicinity of both the input and terminal parts and may be provided in the vicinity of only one of the input and terminal parts.

[0118] Further, in the above respective embodiments, the optical modulation element has a pair of optical waveguides each formed of the lithium niobate film epitaxial grown on the substrate 2; however, the present invention is not limited to such a structure, but the optical waveguides may be formed of an electrooptic material such as barium titanate or lead zirconium titanate. However, while the optical waveguide formed of the lithium niobate film can be reduced in width, a problem of ground electrode layout is conspicuous, and thus the effects of the present invention are significant. Further, as the waveguide layer 3, a semiconductor material, a polymer material, or the like having electrooptic effect may be used.

[0119] Further, in FIG. 1 and other figures, a configuration of the lead-out part obtained by bending the signal electrode at right angles is illustrated; however, the present invention is not limited to this, and the lead-out part formed by bending the signal electrode in a circular arc shape may be used in view of high-frequency characteristics. In this case, the curvature radius may be appropriately set in accordance with, for example, the width of the signal electrode.

REFERENCE SIGNS LIST

[0120] 1A to 1I: Optical modulation element [0121] 2: Substrate [0122] 3: Waveguide layer [0123] 3r: Ridge part [0124] 4: Protective layer [0125] 5: Buffer layer [0126] 6: Electrode layer [0127] 7a: First signal electrode [0128] 7b: Second signal electrode [0129] 7a.sub.1, 7a.sub.2; Lead-out part of first signal electrode [0130] 7a.sub.3: First signal electrode pad [0131] 7a.sub.4: First terminal electrode pad [0132] 7b: Second signal electrode [0133] 7b.sub.1, 7b.sub.2; Lead-out part of second signal electrode [0134] 7b.sub.3: Second signal electrode pad [0135] 7b.sub.4: Second terminal electrode pad [0136] 8a.sub.1: First ground electrode pad [0137] 8b.sub.1: Second ground electrode pad [0138] 8a.sub.2: Third ground electrode pad [0139] 8b.sub.2: Fourth ground electrode pad [0140] 8c.sub.1 to 8c.sub.6: Short-circuit pattern [0141] 8d.sub.1 to 8d.sub.4: Contact plug [0142] 9a: First bias electrode [0143] 9a.sub.1: One end of first bias electrode [0144] 9b: Second bias electrode [0145] 9b.sub.1: One end of second bias electrode [0146] 10: Mach-Zehnder optical waveguide [0147] 10a: First optical waveguide [0148] 10b: Second optical waveguide [0149] 10c: Demultiplexer [0150] 10d: Multiplexer [0151] 10e.sub.1: First linear section [0152] 10e.sub.2: Second linear section [0153] 10e.sub.3: Third linear section [0154] 10f.sub.1: First curved section [0155] 10f.sub.2: Second curved section [0156] 10g: Phase shifter [0157] 10i: Input waveguide [0158] 10o: Output waveguide [0159] 12: Terminal resistor [0160] 20A, 20B: Optical modulation element [0161] 21: Sapphire substrate [0162] 22a, 22b: Optical waveguide [0163] 23: Buffer layer [0164] 24a, 24a.sub.1, 24a.sub.2: Signal electrode [0165] 24b: Ground electrode [0166] 200: Driver circuit [0167] 300: Terminator [0168] D.sub.0: Electrode isolation region [0169] D.sub.1a, D.sub.1b: Nearby region [0170] MZ: Interaction part [0171] MZ.sub.1: First interaction part [0172] MZ.sub.2: Second interaction part [0173] MZ.sub.3: Third interaction part [0174] MZ.sub.4: Third interaction part [0175] NZ: Nearby region of interaction part