MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM
20230059089 · 2023-02-23
Assignee
Inventors
- Takayoshi NAKAHARA (Joetsu-shi, JP)
- Yusuke BIYAJIMA (Joetsu-shi, JP)
- Yuji HARADA (Joetsu-shi, JP)
- Tsutomu OGIHARA (Joetsu-shi, JP)
Cpc classification
G03F7/0757
PHYSICS
G03F7/0382
PHYSICS
C09J133/14
CHEMISTRY; METALLURGY
H01L21/0337
ELECTRICITY
G03F7/11
PHYSICS
G03F7/0752
PHYSICS
C09J125/18
CHEMISTRY; METALLURGY
International classification
G03F7/09
PHYSICS
C09J125/18
CHEMISTRY; METALLURGY
C09J133/14
CHEMISTRY; METALLURGY
G03F7/11
PHYSICS
Abstract
The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.
##STR00001##
Claims
1. A material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film comprising: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent, ##STR00064## wherein R.sup.01 represents a hydrogen atom or a methyl group, R.sup.02 represents an alkyl group having 1 to 3 carbon atoms, “m” represents an integer of 1 or 2, “n” represents an integer of 0 to 4, m+n is an integer of 1 or more and 5 or less, and X represents a single bond or an alkylene group having 1 to 10 carbon atoms and optionally containing an oxygen atom, ##STR00065## wherein Q represents a single bond or a hydrocarbon group with a valency of “q” having 1 to 20 carbon atoms, R.sup.03 represents a hydrogen atom or a methyl group, and “q” represents an integer of 1 to 5.
2. The material for forming an adhesive film according to claim 1, wherein the silicon-containing middle layer film is a silicon-containing resist middle layer film or an inorganic hard mask middle layer film.
3. The material for forming an adhesive film according to claim 1, comprising one or more compounds shown by the following general formula (3) as the photo-acid generator (C), ##STR00066## wherein R.sup.04, R.sup.05, and R.sup.06 each independently represent a linear alkyl group or alkenyl group having 1 to 10 carbon atoms or a branched or cyclic alkyl group or alkenyl group having 3 to 10 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom, or represent an aryl group or aralkyl group having 6 to 18 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom, wherein any two of R.sup.04, R.sup.05, and R.sup.06 are optionally bonded with each other to form a ring with the sulfur atom in the formula, and Y.sup.− represents one of the following general formulae (4) and (5), ##STR00067## wherein R.sup.07 and R.sup.08 each independently represent a monovalent hydrocarbon group containing an aliphatic ring structure having 3 to 40 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom.
4. The material for forming an adhesive film according to claim 3, wherein the general formula (4) is shown by the following general formula (4′), ##STR00068## wherein R.sup.09 represents a hydrogen atom or a trifluoromethyl group, and R.sup.10 represents a monovalent hydrocarbon group containing an aliphatic ring structure having 3 to 30 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom.
5. The material for forming an adhesive film according to claim 1, wherein the X in the general formula (1) represents —C(═O)O—.
6. The material for forming an adhesive film according to claim 1, wherein the resin (A) has a weight-average molecular weight of 1,000 to 20,000.
7. The material for forming an adhesive film according to claim 1, wherein a contained amount of the crosslinking agent (B) is 10 mass % to 50 mass % based on a contained amount of the resin (A).
8. The material for forming an adhesive film according to claim 1, wherein a contained amount of the photo-acid generator (C) is 1 mass % to 20 mass % based on a contained amount of the resin (A).
9. The material for forming an adhesive film according to claim 1, further comprising one or more out of a surfactant, a plasticizer, and a colorant.
10. The material for forming an adhesive film according to claim 1, comprising no thermal acid generator.
11. A patterning process for forming a pattern in a substrate to be processed, comprising the steps of: (I-1) forming a resist underlayer film on the substrate to be processed; (I-2) forming a silicon-containing resist middle layer film on the resist underlayer film; (I-3) applying the material for forming an adhesive film according to claim 1 on the silicon-containing resist middle layer film and then performing a heat treatment to form an adhesive film; (I-4) forming a resist upper layer film on the adhesive film by using a photoresist material; (I-5) subjecting the resist upper layer film to pattern exposure and then to development with a developer to form a pattern in the resist upper layer film; (I-6) transferring the pattern to the adhesive film by dry etching while using the resist upper layer film having the formed pattern as a mask; (I-7) transferring the pattern to the silicon-containing resist middle layer film by dry etching while using the adhesive film having the formed pattern as a mask; and (I-8) transferring the pattern to the resist underlayer film by dry etching while using the silicon-containing resist middle layer film having the transferred pattern as a mask.
12. A patterning process for forming a pattern in a substrate to be processed, comprising the steps of: (II-1) forming a resist underlayer film on the substrate to be processed; (II-2) forming an inorganic hard mask middle layer film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film; (II-3) applying the material for forming an adhesive film according to claim 1 on the inorganic hard mask middle layer film and then performing a heat treatment to form an adhesive film; (II-4) forming a resist upper layer film on the adhesive film by using a photoresist material; (II-5) subjecting the resist upper layer film to pattern exposure and then to development with a developer to form a pattern in the resist upper layer film; (II-6) transferring the pattern to the adhesive film by dry etching while using the resist upper layer film having the formed pattern as a mask; (II-7) transferring the pattern to the inorganic hard mask middle layer film by dry etching while using the adhesive film having the formed pattern as a mask; and (II-8) transferring the pattern to the resist underlayer film by dry etching while using the inorganic hard mask middle layer film having the transferred pattern as a mask.
13. The patterning process according to claim 12, wherein the inorganic hard mask middle layer film is formed by a CVD method or an ALD method.
14. The patterning process according to claim 11, wherein photolithography at a wavelength of 10 nm or more to 300 nm or less, a direct drawing by electron beam, a nanoimprinting, or a combination thereof is employed as a method for forming a circuit pattern in the resist upper layer film.
15. The patterning process according to claim 11, wherein alkaline development: or development with an organic solvent is employed as a development method.
16. The patterning process according to claim 11, wherein the substrate to be processed is a semiconductor device substrate or the semiconductor device substrate coated with any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film.
17. The patterning process according to claim 16, wherein as the metal, silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, cobalt, manganese, molybdenum, or an alloy thereof is used.
18. A method for forming an adhesive film that functions as an adhesive layer employed in a semiconductor device manufacturing process, the method comprising: spin-coating a substrate to be processed with the material for forming an adhesive film according to claim 1; and heating the substrate coated with the material for forming an adhesive film at a temperature of 100° C. or higher to 300° C. or lower for 10 to 600 seconds to form a cured film.
19. A method for forming an adhesive film that functions as an adhesive layer employed in a semiconductor device manufacturing process, the method comprising: spin-coating a substrate to be processed with the material for forming an adhesive film according to claim 1; and heating the substrate coated with the material for forming an adhesive film in an atmosphere having an oxygen concentration of 0.1% or more to 21% or less to form a cured film.
20. A method for forming an adhesive film that functions as an adhesive layer employed in a semiconductor device manufacturing process, the method comprising: spin-coating a substrate to be processed with the material for forming an adhesive film according to claim 1; and heating the substrate coated with the material for forming an adhesive film in an atmosphere having an oxygen concentration of less than 0.1% to form a cured film.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0070]
[0071]
DESCRIPTION OF EMBODIMENTS
[0072] As described above, there have been demands for: a material for forming an adhesive film that has high adhesiveness to a resist upper layer film and has an effect of suppressing fine pattern collapse in a fine patterning process according to a multilayer resist method in a semiconductor device manufacturing process; a patterning process using the material; and a method for forming an adhesive film.
[0073] The present inventors have earnestly studied the above-described problems and investigated materials for forming an adhesive film having high adhesiveness to a resist upper layer film by the formation of an adhesive film and having an effect of suppressing fine pattern collapse in multilayer lithography, and also investigated patterning processes using the materials. As a result, the present inventors have found out that a material for forming an adhesive film having, as a main component, a compound having a certain structure, a patterning process using the material, and a method for forming an adhesive film are extremely effective, and completed the present invention.
[0074] That is, the present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film comprising: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent,
##STR00007##
wherein R.sup.01 represents a hydrogen atom or a methyl group, R.sup.02 represents an alkyl group having 1 to 3 carbon atoms, “m” represents an integer of 1 or 2, “n” represents an integer of 0 to 4, m+n is an integer of 1 or more and 5 or less, and X represents a single bond or an alkylene group having 1 to 10 carbon atoms and optionally containing an oxygen atom,
##STR00008##
wherein Q represents a single bond or a hydrocarbon group with a valency of “q” having 1 to 20 carbon atoms, R.sup.03 represents a hydrogen atom or a methyl group, and “q” represents an integer of 1 to 5.
[0075] Hereinafter, the present invention will be described in detail. However, the present invention is not limited thereto.
[Material for Forming Adhesive Film]
[0076] The present invention provides a material for forming an adhesive film that gives an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. Note that in the inventive material for forming an adhesive film, one kind of the resin (A) may be used, or two or more kinds thereof may be used in combination. Furthermore, the material for forming an adhesive film may contain components other than the components (A) to (D). In the following, each component will be described.
[(a) Resin]
[0077] The resin (A) contained in the inventive material for forming an adhesive film is shown by the following general formula (1).
##STR00009##
[0078] In the formula, R.sup.01 represents a hydrogen atom or a methyl group, R.sup.02 represents an alkyl group having 1 to 3 carbon atoms, “m” represents an integer of 1 or 2, “n” represents an integer of 0 to 4, m+n is an integer of 1 or more and 5 or less, and X represents a single bond or an alkylene group having 1 to 10 carbon atoms and optionally containing an oxygen atom.
[0079] In the general formula (1), R.sup.01 represents a hydrogen atom or a methyl group, Ru represents an alkyl group having 1 to 3 carbon atoms, “m” represents an integer of 1 or 2, “n” represents an integer of 0 to 4, and m+n is an integer of 1 or more and 5 or less. Preferably, “m” represents an integer of 1 or 2, “n” represents an integer of 0 or 1., and m+n is an integer of 1 or more and 3 or less. Further preferably, “m” represents 1, “n” represents 0, and m+n is 1.
[0080] The X in the general formula (1) represents a single bond or an alkylene group having 1 to 10 carbon atoms and optionally containing an oxygen atom. The oxygen atom in the X can form a carbonyl group, a hydroxy group, or an ether bond. For example, the ether bond is an alkylene group having 1 carbon atom and containing an oxygen atom.
[0081] Specific examples of the X include the following, etc., but are not limited thereto.
##STR00010## ##STR00011##
[0082] In the formulae, a broken line represents a bonding arm.
[0083] Examples of the R.sup.02 in the general formula (1) include a methyl group, an ethyl group, a propyl group, and an isopropyl group, and in view of adhesiveness with the resist upper layer film, a methyl group is preferable.
[0084] Specific examples of the resin shown by the general formula (1) include the following, but are not limited thereto. In the following formulae, R.sup.01 is as defined above.
##STR00012## ##STR00013## ##STR00014## ##STR00015## ##STR00016##
[0085] When the material for forming an adhesive film contains these resins, it is possible to form a material for forming an adhesive film having high adhesiveness to a resist upper layer film and having an effect of suppressing fine pattern collapse, and the material can be manufactured easily.
[0086] By using a material for forming an adhesive film containing such a resin for forming a multilayer resist film applied in fine processing in a manufacturing process of a semiconductor device or the like, it is possible to provide a material for forming an adhesive film that has high adhesiveness to a resist upper layer film and has an effect of suppressing fine pattern collapse, a method for forming an adhesive film, and a patterning process.
[0087] The resin can be synthesized according to a known method by polymerizing monomers protected with a protecting group as necessary, and then performing a deprotection reaction as necessary. The polymerization reaction is not particularly limited, but is preferably radical polymerization or anion polymerization. Regarding these methods, JP 2004-115630 A may be consulted.
[0088] The resin preferably has a weight-average molecular weight (Mw) of 1,000 to 20,000, more preferably 5,000 to 15,000. When the Mw is 1,000 or more, excellent film-formability can be provided, the generation of sublimation products during heat-curing can be suppressed, and the contamination of apparatuses due to sublimation products can be suppressed. Meanwhile, when the Mw is 20,000 or less, coatability failure or coating defects due to insufficient solubility to solvents can be suppressed. Furthermore, the resin preferably has a molecular weight distribution (Mw/Mn) of 1.0 to 2.8, more preferably 1.0 to 2.5. Note that in the present invention, Mw and molecular weight distribution are values measured in terms of polystyrene by gel permeation chromatography (GPO) using tetrahydrofuran (THF) as an eluent.
[(B) Crosslinking Agent]
[0089] The inventive material for forming an adhesive film contains a crosslinking agent shown by the following general formula (2) as the component (B). In this manner, curability is enhanced, and intermixing with a resist upper layer film is suppressed. In addition to this advantageous effect, film thickness uniformity is also enhanced in some cases. Furthermore, when a crosslinking agent shown by the following general formula (2) is used, crosslinking rate is higher compared with other crosslinking agents, so that sufficient curability can be achieved even when no thermal acid generator is contained. Accordingly, the inventive material for forming an adhesive film does not require a thermal acid generator, and preferably does not contain a thermal acid generator.
##STR00017##
[0090] In the formula, Q represents a single bond or a hydrocarbon group with a valency of “q” having 1 to 20 carbon atoms, R.sup.03 represents a hydrogen atom or a methyl group, and “q” represents an integer of 1 to 5.
[0091] The Q in the general formula (2) represents a single bond or a hydrocarbon group with a valency of “q” having 1 to 20 carbon atoms. “q” represents an integer of 1 to 5, more preferably 2 or 3. When Q is a hydrocarbon group with a valency of “q” having 1 to 20 carbon atoms, Q is a hydrocarbon group with a valency of “q” obtained by removing “q” hydrogen atoms from a hydrocarbon having 1 to 20 carbon atoms. More specific examples of the hydrocarbon having 1 to 20 carbon atoms in this case include methane, ethane, propane, butane, isobutane, pentane, cyclopentane, hexane, cyclohexane, methyl pentane, methyl cyclohexane, dimethyl cyclohexane, trimethyl cyclohexane, benzene, toluene, xylene, ethyl benzene, ethyl isopropylbenzene, diisopropylbenzene, methylnaphthalene, ethyl naphthalene, and eicosane.
[0092] The R.sup.03 in the general formula (2) represents a hydrogen atom or a methyl group, preferably a methyl group.
[0093] Specific examples of compounds shown by the general formula (2) include the following compounds, but are not limited thereto. In the following formulae, R.sup.03 is as defined above.
##STR00018## ##STR00019## ##STR00020## ##STR00021## ##STR00022##
[0094] One kind of the crosslinking agent (B) may be used, or two or more kinds thereof may be used in combination. The amount of the crosslinking agent (B) to be contained is preferably 10 mass % to 50 mass %, more preferably 15 mass % to 30 mass % based on a contained amount (100 mass %) of the resin (A). When the contained amount is 10 mass % or more, sufficient curability can be provided, and intermixing with a resist upper layer film can be suppressed. Meanwhile, when the contained amount is 50 mass % or less, the proportion of the resin (A) in the composition is low, so that there is no risk of the adhesiveness being degraded.
[(C) Photo-Acid Generator]
[0095] In addition, the inventive material for forming an adhesive film contains a photo-acid generator as the component (C). The photo-acid generator is preferably shown by the following general formula (3).
##STR00023##
[0096] In the formula, R.sup.04, R.sup.05, and R.sup.06 each independently represent a linear alkyl group or alkenyl group having 1 to 10 carbon atoms or a branched or cyclic alkyl group or alkenyl group having 3 to 10 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom, or, represent an aryl group or aralkyl group having 6 to 18 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom. Here, any two of R.sup.04, R.sup.05, and R.sup.06 are optionally bonded with each other to form a ring with the sulfur atom in the formula, and Y.sup.− represents one of the following general formulae (4) and (5).
##STR00024##
[0097] In the formulae, R.sup.07 and R.sup.08 each independently represent a monovalent hydrocarbon group containing an aliphatic ring structure having 3 to 40 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom.
[0098] In this event, the general formula (4) is more preferably shown by the following general formula (4′).
##STR00025##
[0099] In the formula, R.sup.09 represents a hydrogen atom or a trifluoromethyl group, and R.sup.10 represents a monovalent hydrocarbon group containing an aliphatic ring structure having 3 to 30 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom.
[0100] The R.sup.04, R.sup.05, and R.sup.06 in the general formula (3) each independently represent a linear alkyl group or alkenyl group having 1 to 10 carbon atoms or a branched or cyclic alkyl group or alkenyl group having 3 to 10 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom, or represent an aryl group or aralkyl group having 6 to 18 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom. Specific examples thereof include alkyl groups such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclopropylmethyl group, a 4-methyicyclohexyl group, a cyclohexylmethyl group, a norbornyl group, and an adamantyl group; alkenyl groups such as a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group; aryl groups such as a phenyl group, a naphthyl group, and a thienyl group; aralkyl groups such as a benzyl group, a 1-phenylethyl group, and a 2-phenylethyl group; etc. Aryl groups are preferable. Additionally, some of the hydrogen atoms of these groups may be substituted with a heteroatom such as an oxygen atom, a sulfur atom, a nitrogen atom, and a halogen atom. A heteroatom such as an oxygen atom, a sulfur atom, and a nitrogen atom may be contained. As a result, a hydroxy group, a cyano group, a carbonyl group, an ether bond, an ester bond, a sulfonic acid ester bond, a carbonate bond, a lactone ring, a sultone ring, carboxylic anhydride, a haloalkyl group, or the like may be formed or contained. In addition, any two of R.sup.04, R.sup.05, and R.sup.06 are optionally bonded with each other to form a ring with the sulfur atom in the formula.
[0101] Meanwhile, the Y.sup.− in the general formula (3) represents one of the general formulae (4) and (5), and specific examples thereof include the following or the like, but are not limited thereto. In the general formula (4) or (5), R.sup.07 and R.sup.08 each independently represent a monovalent hydrocarbon group containing an aliphatic ring structure having 3 to 40 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom. R.sup.07 and R.sup.08 preferably represent a 1-norbornyl group, a 1-adamantyl group, a 2-adamantyl group, or a 4-oxo-1-adamantyl group.
##STR00026## ##STR00027## ##STR00028## ##STR00029## ##STR00030## ##STR00031## ##STR00032## ##STR00033## ##STR00034## ##STR00035## ##STR00036## ##STR00037## ##STR00038## ##STR00039## ##STR00040## ##STR00041## ##STR00042## ##STR00043## ##STR00044## ##STR00045## ##STR00046## ##STR00047## ##STR00048## ##STR00049## ##STR00050## ##STR00051##
[0102] In the general formula (4′), R.sup.09 represents a hydrogen atom or a trifluoromethyl group, preferably a trifluoromethyl group. R.sup.10 represents a monovalent hydrocarbon group containing an aliphatic ring structure having 3 to 30 carbon atoms, optionally substituted with a heteroatom, and optionally having an intervening heteroatom. R.sup.10 preferably represents a 1-norbornyl group, a 1-adamantyl group, a 2-adamantyl group, or a 4-oxo-1-adamantyl group.
[0103] One kind of the photo-acid generator (C) may be used or two or more kinds thereof may be used in combination to make appropriate adjustments to the pattern profile, exposure sensitivity, etc. of the resist upper layer film. The amount of the photo-acid generator (C) to be contained is preferably 1 mass % to 20 mass %, more preferably 5 mass % to 15 mass % based on a contained amount (100 mass %) of the resin (A). When the contained amount of the photo-acid generator (C) is within such ranges, resolution is favorable, and there is no risk of problems of foreign substances occurring after resist development or during removal.
[(D) Organic Solvent]
[0104] There is no particular restriction to the organic solvent (D) contained in the material for forming an adhesive film used in the inventive method for forming an adhesive film as long as the resin (A), the crosslinking agent (B), the photo-acid generator (C), if present, other additives, and so forth can be dissolved in the solvent. Specifically, solvents with a boiling point of lower than 180° C. such as those disclosed in paragraphs (0091) and (0092) of JP 2007-199653 A can be used. Above all, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, 2-heptanone, cyclopentanone, cyclohexanone, and a mixture of two or more thereof are preferably used.
[0105] Such a composition can be applied by spin-coating, and since the inventive material for forming an adhesive film as described above is contained, it is possible to achieve a composition for forming an adhesive film that has high adhesiveness to a resist upper layer film and has an effect of suppressing fine pattern collapse.
[Other Additives]
[0106] The inventive material for forming an adhesive film can further contain one or more out of a surfactant, a plasticizer, and a colorant besides the components (A) to (D). Each component will be described below.
(Surfactant)
[0107] In the inventive material for forming an adhesive film, a surfactant can be contained so as to enhance the coating property in spin-coating. As examples of the surfactant, those disclosed in (0142) to (0147) of JP 2009-269953 A can be used.
(Plasticizer)
[0108] In addition, a plasticizer may be contained in the inventive material for forming an adhesive film. The plasticizer is not particularly limited, and known various types of plasticizers can be widely used. Examples thereof include low-molecular-weight compounds such as phthalic acid esters, adipic acid esters, phosphoric acid esters, trimellitic acid esters, and citric acid esters; and polymers such as polyethers, polyesters, and polyacetal-based polymers disclosed in JP 2013-253227 A.
(Colorant)
[0109] Furthermore, in the inventive material for forming an adhesive film, a colorant may be contained so as to enhance the resolution during patterning in multilayer lithography further. The colorant is not particularly limited as long as the colorant is a compound that has an appropriate absorption at the exposure wavelength, and known various compounds can be widely used. Examples thereof include benzenes, naphthalenes, anthracenes, phenanthrenes, pyrenes, isocyanuric acids, and triazines.
[0110] In addition, the inventive material for forming an adhesive film is extremely useful as an adhesive film material for multilayer resist processes such as a 4-layer resist process using a resist underlayer film and a silicon-containing middle layer film.
[0111] The silicon-containing middle layer film can be a silicon-containing resist middle layer film or an inorganic hard mask middle layer film in accordance with the patterning processes described below. The inorganic hard mask middle layer film is preferably selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film.
[Method for Forming Adhesive Film]
[0112] The present invention provides a method for forming an adhesive film by using the above-described material for forming an adhesive film, the adhesive film having high adhesiveness to a resist upper layer film and having an effect of suppressing fine pattern collapse in a fine patterning process according to a multilayer resist method in a semiconductor device manufacturing process.
[0113] In the inventive method for forming an adhesive film, a substrate to be processed is coated with the above-described material for forming an adhesive film by a spin-coating method or the like. After the spin-coating, baking (a heat treatment) is performed in order to evaporate the organic solvent and promote a crosslinking reaction to prevent intermixing with the resist upper layer film or the silicon-containing middle layer film. The baking is preferably performed at 100° C. or higher and 300° C. or lower for 10 to 600 seconds, more preferably at 200° C. or higher and 250° C. or lower for 10 to 300 seconds. Considering the effect on damage to the adhesive film and deformation of the wafer, the upper limit of the heating temperature in the wafer process of the lithography is preferably set to 300° C. or lower, more preferably 250° C. or lower.
[0114] Alternatively, in the inventive method for forming an adhesive film, an adhesive film can also be formed by coating a substrate to be processed with the inventive material for forming an adhesive film by a spin-coating method or the like in the same manner as above and curing the material for forming an adhesive film by baking in an atmosphere having an oxygen concentration of 0.1% or more to 21% or less. By baking the inventive material for forming an adhesive film in such an oxygen atmosphere, a sufficiently cured film can be obtained.
[0115] The atmosphere during the baking may be in air, or an inert gas such as N.sub.2, Ar, and He may also be introduced. In this event, the atmosphere may have an oxygen concentration of less than 0.1%. In addition, the baking temperature and so forth can be as described above. The crosslinking reaction during the adhesive film formation can be promoted without causing degradation of the substrate to be processed even when the substrate to be processed contains a material that is unstable to heating under an oxygen atmosphere.
[Patterning Process]
[0116] The present invention provides the following two methods as patterning processes according to 4-layer resist processes using the above-described material for forming an adhesive film. Firstly, the present invention provides a patterning process for forming a pattern in a substrate to be processed, including at least the following steps:
[0117] forming a resist underlayer film by using an organic film material on the substrate to be processed;
[0118] forming a silicon-containing middle layer film (silicon-containing resist middle layer film) by using a resist middle layer film material containing a silicon atom on the resist underlayer film;
[0119] forming an adhesive film by using the inventive material for forming an adhesive film on the silicon-containing resist middle layer film;
[0120] forming a resist upper layer film by using a resist upper layer film material including a photoresist composition on the adhesive film so that a multilayer resist film is constructed;
[0121] forming a resist upper layer film pattern in the resist upper layer film by exposing a pattern circuit region of the resist upper layer film, then developing with a developer;
[0122] forming an adhesive film pattern by etching the adhesive film while using the obtained resist upper layer film pattern as an etching mask;
[0123] forming a silicon-containing resist middle layer film pattern by etching the silicon-containing resist middle layer film while using the obtained adhesive film pattern as an etching mask;
[0124] forming a resist underlayer film pattern by etching the resist underlayer film while using the obtained silicon-containing resist middle layer film pattern as an etching mask; and
[0125] further forming the pattern on the substrate to be processed by etching the substrate to be processed while using the obtained resist underlayer film pattern as an etching mask.
[0126] As the silicon-containing resist middle layer film in the 4-layer resist process, a polysilsesquioxane-based middle layer film is also favorably used. The silicon-containing resist middle layer film having an antireflective effect can suppress the reflection. Particularly, for 193-nm light exposure, a material containing many aromatic groups and having high substrate etching resistance is used as a resist underlayer film, so that the k-value and thus the substrate reflection are increased. However, the reflection can be suppressed by the silicon-containing resist middle layer film, and so the substrate reflection can be reduced to 0.5% or less. As the silicon-containing resist middle layer film having the antireflective effect, a polysilsesquioxane is preferably used, the polysilsesguioxane having anthracene for 248-nm and 157-nm light exposure, or a phenyl group or a light-absorbing group having a silicon-silicon bond for 193-nm light exposure in a pendant structure, and being crosslinked by an acid or heat.
[0127] In this case, forming a silicon-containing resist middle layer film by a spin-coating method is simpler and more advantageous regarding cost than a CVD method.
[0128] In addition, an inorganic hard mask middle layer film can be formed as a silicon-containing middle layer film, and in this case, a pattern can be formed in a substrate to be processed by performing at least the following steps:
[0129] forming a resist underlayer film by using an organic film material on the substrate to be processed;
[0130] forming an inorganic hard mask middle layer film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;
[0131] forming an adhesive film by using the inventive material for forming an adhesive film on the inorganic hard mask middle layer film;
[0132] forming a resist upper layer film by using a resist upper layer film material including a photoresist composition on the adhesive film;
[0133] forming a resist upper layer film pattern in the resist upper layer film by exposing a pattern circuit region of the resist upper layer film, then developing with a developer;
[0134] forming an adhesive film pattern by etching the adhesive film while using the obtained resist upper layer film pattern as an etching mask;
[0135] forming an inorganic hard mask middle layer film pattern by etching the inorganic hard mask middle layer film while using the obtained adhesive film pattern as an etching mask;
[0136] forming a resist underlayer film pattern by etching the resist underlayer film while using the obtained inorganic hard mask middle layer film pattern as an etching mask; and
[0137] further forming the pattern in the substrate to be processed by etching the substrate to be processed while using the obtained resist underlayer film pattern as an etching mask.
[0138] In the case where an inorganic hard mask middle layer film is formed on the resist underlayer film as described above, a silicon oxide film, a silicon nitride film, and a silicon oxynitride film (SiON film) can be formed by a CVD method, an ALD method, or the like. The method for forming the silicon nitride film is disclosed in, for example, JP 2002-334869 A and WO 2004/066377 A1. The film thickness of the inorganic hard mask middle layer film is preferably 5 to 200 nm, more preferably 10 to 100 nm. As the inorganic hard mask middle layer film, a SiON film is most preferably used, being effective as an antireflective coating. When the SiON film is formed, the substrate temperature reaches 300 to 500° C. Hence, the resist underlayer film needs to withstand the temperature of 300 to 500° C.
[0139] The resist upper layer film in the 4-layer resist process may be a positive type or a negative type, and any generally-used photoresist composition can be employed. After spin-coating of the photoresist composition, pre-baking is preferably performed at 60 to 180° C. for 10 to 300 seconds. Then, light exposure, post-exposure baking (PEB), and development are performed according to conventional methods to obtain the resist upper layer film pattern. Note that the thickness of the resist upper layer film is not particularly limited, but is preferably 30 to 500 nm, and 50 to 400 nm is particularly preferable.
[0140] A circuit pattern (resist upper layer film pattern) is formed in the resist upper layer film. In the circuit pattern formation, the circuit pattern is preferably formed by a lithography using light having a wavelength of 10 nm or more to 300 nm or less, a direct drawing by electron beam, a nanoimprinting, or a combination thereof.
[0141] Note that examples of exposure light include a high-energy beam with a wavelength of 300 nm or less, specifically, deep ultraviolet ray, KrF excimer laser beam (248 nm), ArF excimer laser beam (1.93 nm), F.sub.2 laser beam (157 nm), Kr.sub.2 laser beam (146 nm), Ar.sub.2 laser beam (126 nm), soft X-ray of 3 to 20 nm (EUV), electron beam (EB), ion beam, X-ray, and the like.
[0142] Additionally, in forming the circuit pattern, the circuit pattern is preferably developed by alkaline development or development with an organic solvent.
[0143] Next, etching is performed while using the obtained resist upper layer film pattern as a mask. The etching of the adhesive film in the 4-layer resist process is performed by using an oxygen-based gas while using the resist upper layer film pattern as a mask. Thereby, the adhesive film pattern is formed.
[0144] Subsequently, etching is performed while using the obtained adhesive film pattern as a mask. The etching of the silicon-containing resist middle layer film and the inorganic hard mask middle layer film is performed by using a fluorocarbon-based gas while using the adhesive film pattern as a mask. Thereby, the silicon-containing resist middle layer film pattern and the inorganic hard mask middle layer film pattern are formed.
[0145] The etching of the adhesive film may be performed continuously before the etching of the silicon-containing middle layer film. Alternatively, after the adhesive film is etched alone, the etching apparatus is changed, for example, and then the etching of the silicon-containing middle layer film may be performed.
[0146] Next, the resist underlayer film is etched while using the obtained silicon-containing resist middle layer film pattern and inorganic hard mask middle layer film pattern as masks.
[0147] Subsequently, the substrate to be processed can be etched according to a conventional method. For example, the substrate to be processed made of SiO.sub.2, SiN, or silica-based low-dielectric insulating film is etched mainly with a fluorocarbon-based gas; and p-Si, Al, or W is etched mainly with a chlorine- or bromine-based gas. When the substrate is processed by etching with a fluorocarbon-based gas, the silicon-containing middle layer film pattern in the 3-layer resist process is removed when the substrate is processed. When the substrate is etched with a chlorine- or bromine-based gas, the silicon-containing middle layer film pattern needs to be removed by additional dry etching with a fluorocarbon-based gas after the substrate processing.
[0148] Note that the substrate to be processed is not particularly limited, and it is possible to use a semiconductor device substrate or the semiconductor device substrate coated with any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, or a metal oxynitride film. As the metal, it is possible to use silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, cobalt, manganese, molybdenum, or an alloy thereof.
[0149] Specific examples include: substrates made of Si, α-Si, p-Si, SiO.sub.2, SiN, SiON, W, TiN, Al, or the like; the substrate coated with a layer to be processed; etc. Examples of the layer to be processed include: various Low-k films made of Si, SiO.sub.2, SiON, SiN, p-Si, α-Si, W, W—Si, Al, Cu, Al—Si, or the like; and stopper films thereof. Generally, the layer can be formed to have a thickness of 50 to 10,000 nm, in particular, 100 to 5,000 nm. Note that when the layer to be processed is formed, the substrate and the layer to be processed are formed from different materials.
[0150] Hereinbelow, an example of the 4-layer resist process will be specifically described with reference to
[0151] Next, as shown in
[0152] As described above, the inventive patterning processes make it possible to form a fine pattern with high precision in a substrate to be processed in the multilayer resist processes.
EXAMPLE
[0153] Hereinafter, the present invention will be described further specifically with reference to Synthesis Examples, Comparative Synthesis Examples, Examples, and Comparative Examples. However, the present invention is not limited thereto. Note that, specifically, the molecular weight was measured by the following method. Weight-average molecular weight (Mw) and number-average molecular weight (Mn) were measured by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent in terms of polystyrene, and dispersity (Mw/Mn) was calculated therefrom.
[0154] Polymers (A1) to (A6) and comparative polymers (R1) to (R3) to be used as a resin (A) for materials for forming an adhesive film were synthesized using the monomers (B1) to (B9) shown below.
##STR00052## ##STR00053##
[Synthesis Example 1] Synthesis of Polymer (A1)
[0155] A 2-L flask was charged with 16.2 g of 4-acetoxystyrene (B1), and as a solvent, 50 g of tetrahydrofuran. This reaction container was cooled to −70° C. under nitrogen atmosphere. Vacuum degassing and nitrogen blowing were repeated three times. After the temperature was raised to room temperature, 1.2 g of AIBN (azobisisobutyronitrile) was added as a polymerization initiator, the temperature was raised to 60° C., and the reaction was allowed to take place for 15 hours. This reaction solution was added to 1 L of isopropyl alcohol solution and precipitated. A white solid thus obtained was dissolved once more in a mixed solvent of 100 mL of methanol and 200 mL of tetrahydrofuran. 10 g of trimethylamine and 10 g of water were added thereto. Deprotection reaction of acetyl groups was conducted at 70° C. for 5 hours, followed by neutralization with acetic acid. The reaction solution was concentrated, and then dissolved in 100 mL of acetone. By similar precipitation, subsequent filtration, and drying at 60° C., a white polymer (A1) was obtained. When measured by GPC, the weight-average molecular weight (Mw) and dispersity (Mw/Mn) were Mw=8,500 and Mw/Mn=1.68.
##STR00054##
[Synthesis Example 2] Synthesis of Polymer (A2)
[0156] A 2-L flask was charged with 17.8 g of 4-hydroxyphenyl methacrylate (B2), and as a solvent, 50 g of tetrahydrofuran. This reaction container was cooled to −70° C. under nitrogen atmosphere. Vacuum degassing and nitrogen blowing were repeated three times. After the temperature was raised to room temperature, 1.2 g of AIBN (azobisisobutyronitrile) was added as a polymerization initiator, the temperature was raised to 60° C., and the reaction was allowed to take place for 15 hours. This reaction solution was added to 1 L of isopropyl alcohol solution and precipitated. The obtained white solid was collected by filtration and vacuum dried at 60° C. to obtain a white polymer (A2). When measured by GPC, the weight-average molecular weight (Mw) and dispersity (Mw/Mn) were Mw=11,000 and Mw/Mn=2.11.
##STR00055##
[Synthesis Examples 3 to 6] Synthesis of Polymers (A3) to (A6)
[0157] Except that the monomers shown in Table 1 were used, the polymers (A3) to (A6) shown in Table 1 were obtained as products under the same reaction conditions as in Synthesis Example 2. In addition, the weight-average molecular weight (Mw) and dispersity (Mw/Mn) determined by GPC are shown.
TABLE-US-00001 TABLE 1 Polymerization Molecular Synthesis initiator weight Dispersity Example Polymer Monomer (AIBN) (Mw) (Mw/Mn) 1 A1 B1 1.2 g 8,500 1.68 16.2 g 2 A2 B2 1.2 g 11,000 2.11 17.8 g 3 A3 B3 1.2 g 10,400 2.06 17.8 g 4 A4 B4 1.2 g 8,900 1.92 19.4 g 5 A5 B5 1.2 g 12,200 2.18 19.2 g 6 A6 B6 1.2 g 12,600 2.21 19.2 g
[Comparative Synthesis Example 1] Synthesis of Comparative Polymer (R1)
[0158] A 2-L flask was charged with 19.2 g of 4-methoxyphenyl methacrylate (B7), and as a solvent, 50 g of tetrahydrofuran. This reaction container was cooled to −70° C. under nitrogen atmosphere. Vacuum degassing and nitrogen blowing were repeated three times. After the temperature was raised to room temperature, 1.2 g of AIBN (azobisisobutyronitrile) was added as a polymerization initiator, the temperature was raised to 60° C., and the reaction was allowed to take place for 15 hours. This reaction solution was added to 1 L of isopropyl alcohol solution and precipitated. The obtained white solid was collected by filtration and vacuum dried at 60° C. to obtain a white polymer (R1). When measured by CPC, the weight-average molecular weight (Mw) and dispersity (Mw/Mn) were Mw=11,700 and Mw/Mn=2.14.
##STR00056##
[Comparative Synthesis Example 2] Synthesis of Comparative Polymer (R2)
[0159] A 2-L flask was charged with 23.4 g of 3-tert-butyl-4-hydroxyphenyl methacrylate (B8), and as a solvent, 50 g of tetrahydrofuran. This reaction container was cooled to −70° C. under nitrogen atmosphere. Vacuum degassing and nitrogen blowing were repeated three times. After the temperature was raised to room temperature, 1.2 g of AIBN (azobisisobutyronitrile) was added as a polymerization initiator, the temperature was raised to 60° C., and the reaction was allowed to take place for 15 hours. This reaction solution was added to 1 L of isopropyl alcohol solution and precipitated. The obtained white solid was collected by filtration and vacuum dried at 60° C. to obtain a white polymer (R2). When measured by GPC, the weight-average molecular weight (Mw) and dispersity (Mw/Mn) were Mw=8,700 and Mw/Mn=1.69.
##STR00057##
[Comparative Synthesis Example 3] Synthesis of Comparative Polymer (R3)
[0160] A 2-L flask was charged with 17.0 g of 2-oxotetrahydrofuran-3-yl methacrylate (B9), and as a solvent, 50 g of tetrahydrofuran. This reaction container was cooled to −70° C. under nitrogen atmosphere. Vacuum degassing and nitrogen blowing were repeated three times. After the temperature was raised to room temperature, 1.2 g of AIBN (azobisisobutyronitrile) was added as a polymerization initiator, the temperature was raised to 60° C., and the reaction was allowed to take place for 15 hours. This reaction solution was added to 1 L of isopropyl alcohol solution and precipitated. The obtained white solid was collected by filtration and vacuum dried at 60° C. to obtain a white polymer (R3). When measured by GPC, the weight-average molecular weight (Mw) and dispersity (Mw/Mn) were Mw=9,700 and Mw/Mn=2.03.
##STR00058##
Preparation of Materials (AL-1 to -17, Comparative AL-1 to -9) for Forming Adhesive Film
[0161] For the preparation of materials for forming an adhesive film and comparative materials, the following were used: the polymers (A1) to (A6) and comparative polymers (R1) to (R3); (X1) to (X4) as crosslinking agents; (P1) to (P3) as photo-acid generators; and (AG1) as a thermal acid generator. Using propylene glycol monomethyl ether acetate (PGMEA) containing 0.1 mass % of PF636 (manufactured by OMNOVA), the compounds were dissolved in proportions shown in Table 2. The solution was then filtered through a 0.1-μm filter made of fluorinated resin to prepare materials (AL-1 to -17, comparative AL-1 to -9) for forming an adhesive film.
##STR00059##
TABLE-US-00002 TABLE 2 Cross- Thermal Material linking Photo-acid acid for forming Polymer agent generator generator PGMEA adhesive (parts by (parts by (parts by (parts by (parts by film mass) mass) mass) mass) mass) AL-1 A1(10) X1(3) P1(1) — 2500 AL-2 A2(10) X1(3) P1(1) — 2500 AL-3 A3(10) X1(3) P1(1) — 2500 AL-4 A4(10) X1(3) P1(1) — 2500 AL-5 A5(10) X1(3) P1(1) — 2500 AL-6 A6(10) X1(3) P1(1) — 2500 AL-7 A2(10) X1(1) P1(0.9) — 2400 X2(1) AL-8 A2(10) X1(1) P2(0.8) — 2400 X2(1) AL-9 A2(10) X1(2) P1(0.2) — 2400 P2(0.8) AL-10 A2(10) X1(2) P1(0.2) — 2400 P3(0.8) AL-11 A3(10) X1(2) P2(1.2) — 2400 AL-12 A6(10) X1(2) P2(1.2) — 2400 AL-13 A2(10) X1(3) P3(0.9) — 2500 AL-14 A4(10) X1(1) P1(0.9) — 2400 X2(1) AL-15 A4(10) X1(1) P2(0.8) — 2400 X2(1) AL-16 A4(10) X1(2) P1(0.2) — 2400 P2(0.8) AL-17 A4(10) X1(2) P1(0.2) — 2400 P3(0.7) Comparative R1(10) X1(3) P1(1) — 2500 AL-1 Comparative R2(10) X1(3) P1(1) — 2500 AL-2 Comparative R3(10) X1(3) P1(1) — 2500 AL-3 Comparative A2(10) X1(3) — — 2500 AL-4 Comparative A2(10) — P1(1) — 2500 AL-5 Comparative A4(10) X3(3) P1(1) — 2500 AL-6 Comparative A4(10) X3(3) P1(1) AG1(0.5) 2500 AL-7 Comparative A2(10) X4(3) P1(1) — 2500 AL-8 Comparative A2(10) X4(5) P1(1) — 2500 AL-9
Example 1: Solvent Resistance Evaluation (Examples 1-1 to 1-17, Comparative Examples 1-1 to 1-9)
[0162] The materials (AL-1 to -17, comparative AL-1 to -9) for forming an adhesive film prepared above were respectively applied onto a silicon substrate and baked at 220° C. for 60 seconds. Then, the film thickness was measured. A PGMEA solvent was dispensed thereon, left to stand for 30 seconds, spin-dried, and baked at 100° C. for 60 seconds to evaporate the PGMEA solvent. The film thickness was then remeasured. Solvent resistance was evaluated by determining the difference between the film thicknesses of before and after the PGMEA treatment. Table 3 shows the results.
TABLE-US-00003 TABLE 3 Film Film Material thickness thickness for forming after film after PGMEA adhesive formation: treatment: b/a × 100 film a (Å) b (Å) (%) Example 1-1 AL-1 206 204 99.1 Example 1-2 AL-2 201 199 98.9 Example 1-3 AL-3 205 203 99.0 Example 1-4 AL-4 213 211 99.2 Example 1-5 AL-5 205 203 99.0 Example 1-6 AL-6 209 207 99.0 Example 1-7 AL-7 209 207 99.1 Example 1-8 AL-8 211 208 98.6 Example 1-9 AL-9 204 202 99.1 Example 1-10 AL-10 203 201 98.9 Example 1-11 AL-11 207 205 99.2 Example 1-12 AL-12 208 207 99.4 Example 1-13 AL-13 203 200 98.5 Example 1-14 AL-14 201 200 99.3 Example 1-15 AL-15 202 200 99.2 Example 1-16 AL-16 210 209 99.3 Example 1-17 AL-17 203 201 98.8 Comparative Comparative 206 204 99.3 Example 1-1 AL-1 Comparative Comparative 204 203 99.2 Example 1-2 AL-2 Comparative Comparative 208 206 99.2 Example 1-3 AL-3 Comparative Comparative 205 203 99.1 Example 1-4 AL-4 Comparative Comparative 201 157 78.1 Example 1-5 AL-5 Comparative Comparative 213 146 68.4 Example 1-6 AL-6 Comparative Comparative 208 206 99.0 Example 1-7 AL-7 Comparative Comparative 202 186 91.9 Example 1-8 AL-8 Comparative Comparative 205 190 92.5 Example 1-9 AL-9
[0163] As shown in Table 3, in Examples 1-1 to 1-17, in which the inventive materials (AL-1 to -17) for forming an adhesive film were used, there was hardly any reduction in film thickness due to treatment with a solvent, and it can be observed that a film having favorable solvent resistance was obtained. On the other hand, in Comparative Example 1-5, in which no crosslinking agent was contained, it can be observed that sufficient solvent resistance was not achieved. Meanwhile, comparing Comparative Example 1-6 with Comparative Example 1-7, curability was insufficient in Comparative Example 1-6, in which no thermal acid generator was contained, and it can be observed that when using the crosslinking agent X3, it is necessary to use the crosslinking agent X3 in combination with a thermal acid generator. Furthermore, it can be observed that in Comparative Examples 1-8 and 1-9, in which the crosslinking agent X4 was used, it was not possible to achieve sufficient solvent resistance with baking at 220° C.
Example 2: Adhesiveness Test (Examples 2-1 to 2-17, Comparative Examples 2-1 to 2-5)
[0164] The materials (AL-1 to -17, comparative AL-1 to -4, -7) for forming an adhesive film were each applied onto an SiO.sub.2 wafer substrate and baked at 220° C. for 60 seconds in the atmosphere by using a hot plate. Thus, an adhesive film with a film thickness of 200 nm was formed. This wafer with an adhesive film was cut into a 1×1 cm square, and an aluminum pin with epoxy adhesive was fastened to the cut wafer with a dedicated jig. Thereafter, the assembly was heated with an oven at 150° C. for 1 hour to bond the aluminum pin to the substrate. After cooling to room temperature, initial adhesiveness was evaluated based on the resistance force by a thin-film adhesion strength measurement apparatus (Sebastian Five-A).
[0165]
TABLE-US-00004 TABLE 4 Material for forming Adhesion adhesive film (mN) Example 2-1 AL-1 370 Example 2-2 AL-2 520 Example 2-3 AL-3 460 Example 2-4 AL-4 640 Example 2-5 AL-5 420 Example 2-6 AL-6 480 Example 2-7 AL-7 530 Example 2-8 AL-8 490 Example 2-9 AL-9 520 Example 2-10 AL-10 520 Example 2-11 AL-11 470 Example 2-12 AL-12 450 Example 2-13 AL-13 530 Example 2-14 AL-14 620 Example 2-15 AL-15 610 Example 2-16 AL-16 620 Example 2-17 AL-17 600 Comparative Example 2-1 Comparative AL-1 160 Comparative Example 2-2 Comparative AL-2 210 Comparative Example 2-3 Comparative AL-3 330 Comparative Example 2-4 Comparative AL-4 530 Comparative Example 2-5 Comparative AL-7 600
[0166] As shown in Table 4, it was observed that in Examples 2-1 to 2-17, in which the inventive materials (AL-1 to -17) for forming an adhesive film were used, adhesion was excellent compared with Comparative Example 2-1, in which a polymer containing no hydroxy groups was contained, and Comparative Example 2-2, in which a polymer having a bulky substituent with 4 carbon atoms near a hydroxy group was contained. It can be seen that in Examples 2-4 and 2-14 to -17, in which a polymer having two hydroxy groups in adjacent positions was contained, particularly excellent adhesiveness was exhibited.
Example 3: Patterning Test (Examples 3-1 to 3-17, Comparative Examples 3-1 to 3-5)
[0167] Spin-on carbon ODL-301 (carbon content: 88 mass %) available from Shin-Etsu Chemical Co., Ltd. was applied to silicon wafer substrates and the resulting substrates were baked at 350° C. for 60 seconds to form a 200-nm thick resist underlayer film. A CVD-SiON hard mask middle layer film was formed thereon, and further, each of the materials (AL-1 to -17, comparative AL-1 to -4, -7) for forming an adhesive film was respectively applied and baked at 220° C. for 60 seconds to form an adhesive film having a film thickness of 20 nm. A monolayer resist for ArF was applied thereon as a resist upper layer film material and baked at 105° C. for 60 seconds to form a resist upper layer film having a film thickness of 100 nm. A liquid immersion top coat material (TC-1) was applied on the resist upper layer film and baked at 90° C. for 60 seconds to form a top coat having a film thickness of 50 nm.
[0168] The resist upper layer film material (monolayer resist for ArF) was prepared by: dissolving a polymer (PRP-A1), an acid generator (PAG1), and a basic compound (Amine1) into a solvent containing 0.1 mass % FC-430 (manufactured by Sumitomo 3M Ltd.) in proportions shown in Table 5; and filtering the solution through a 0.1-μm filter made of a fluorinated resin.
TABLE-US-00005 TABLE 5 Acid Basic Polymer generator compound Solvent (parts by (parts by (parts by (parts by mass) mass) mass) mass) SL resist PRP-A1 PAG1 Amine1 PGMEA for ArF (100) (6.6) (0.8) (2500)
Polymer for resist: PRP-A1
Molecular weight (Mw)=8,600
Dispersity (Mw/Mn)=1.88
[0169] ##STR00060##
Acid generator: PAG1
##STR00061##
Basic Compound: Amine1
[0170] ##STR00062##
[0171] The liquid immersion top coat material (TC-1) was prepared by: dissolving a top coat polymer (PP1) into organic solvents in proportions shown in Table 6; and filtering the solution through a 0.1-μm filter made of a fluorinated resin.
TABLE-US-00006 TABLE 6 Polymer (parts by Organic solvent mass) (parts by mass) TC-1 PP1 Diisoamyl ether (2700) (100) 2-methyl-1-butanol (270)
Top coat polymer: PP1
Molecular weight (Mw)=8,800
Dispersity (Mw/Mn)=1.69
[0172] ##STR00063##
[0173] Next, the resulting substrate was exposed to light with an ArF liquid immersion exposure apparatus (NSR—S610C manufactured by Nikon Corporation, NA: 1.30, σ: 0.98/0.65, 35° s-polarized dipole illumination, 6% halftone phase shift mask), baked (PEB) at 100° C. for 60 seconds, and developed with a 2.38 mass % aqueous solution of tetramethylammonium hydroxide (TMAH) for 30 seconds. Thus, a 40-nm 1:1 line-and-space pattern was obtained. Regarding this pattern, the sectional profile and roughness were observed with an electron microscope. The collapse limit (nm) was a minimum width of the lines which could be resolved without collapse when the line width was reduced by increasing the exposure dose. A smaller value indicates higher and better collapse resistance.
[0174] The cross-sectional profile of the obtained pattern was evaluated with an electron microscope (S-4700) manufactured by Hitachi, Ltd. and the pattern roughness was evaluated with an electron microscope (CG4000) manufactured by Hitachi High-Technologies Corp. Table 7 shows the results.
TABLE-US-00007 TABLE 7 Pattern Material sectional Pattern Collapse for forming profile after roughness limit adhesive film development (nm) (nm) Example 3-1 AL-1 Vertical 1.6 32 profile Example 3-2 AL-2 Vertical 1.7 28 profile Example 3-3 AL-3 Vertical 1.6 29 profile Example 3-4 AL-4 Vertical 1.7 26 profile Example 3-5 AL-5 Vertical 1.6 30 profile Example 3-6 AL-6 Vertical 1.6 30 profile Example 3-7 AL-7 Vertical 1.6 31 profile Example 3-8 AL-8 Vertical 1.6 29 profile Example 3-9 AL-9 Vertical 1.6 29 profile Example 3-10 AL-10 Vertical 1.7 29 profile Example 3-11 AL-11 Vertical 1.6 30 profile Example 3-12 AL-12 Vertical 1.6 30 profile Example 3-13 AL-13 Vertical 1.7 29 profile Example 3-14 AL-14 Vertical 1.7 28 profile Example 3-15 AL-15 Vertical 1.6 26 profile Example 3-16 AL-16 Vertical 1.6 27 profile Example 3-17 AL-17 Vertical 1.6 27 profile Comparative Comparative Vertical 2.2 39 Example 3-1 AL-1 profile Comparative Comparative Vertical 2.3 37 Example 3-2 AL-2 profile Comparative Comparative Vertical 2.2 35 Example 3-3 AL-3 profile Comparative Comparative Trailing 2.4 28 Example 3-4 AL-4 profile Comparative Comparative Undercut 2.1 37 Example 3-5 AL-7 profile
[0175] As shown in Table 7, it can be observed that better collapse suppression performance was exhibited and that it was possible to form finer patterns in Examples 3-1 to 3-17, where the inventive materials (AL-1 to -17) for forming an adhesive film were used, compared with the Comparative Examples. Furthermore, it can be observed that excellent pattern profile and pattern roughness were achieved by making appropriate adjustments to the photo-acid generator. In Comparative Examples 3-1 to 3-3, in which the resins contained in the inventive materials for forming an adhesive film were not contained and adhesion was low, pattern collapse suppression performance was low. In Comparative Example 3-4, containing no photo-acid generator, and in Comparative Example 3-5, not containing the crosslinking agents contained in the inventive materials for forming an adhesive film, degradation was observed in the sectional profile of the pattern.
[0176] From the above, the inventive materials for forming an adhesive film have high adhesiveness to a resist upper layer film, and have an effect of suppressing fine pattern collapse, and are therefore extremely useful as adhesive film materials to be used in multilayer resist methods. In addition, according to the inventive patterning processes using these materials, a fine pattern can be formed in a substrate to be processed with high precision.
[0177] It should be noted that the present invention is not limited to the above-described embodiments. The embodiments are just examples, and any examples that have substantially the same feature and demonstrate the same functions and effects as those in the technical concept disclosed in claims of the present invention are included in the technical scope of the present invention.