Radiation-emitting optoelectronic component

Abstract

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

Claims

1. A radiation-emitting optoelectronic component comprising: a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum, and a conversion element comprising: a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the electromagnetic spectrum ranging from 475 nm to 500 nm inclusive; and wherein the first phosphor is selected from a group comprising BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, ALi.sub.3XO.sub.4 or where the first phosphor comprises a combination of at least two of the following phosphors: BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4 and M*.sub.(1−x*−y*−z*)Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E.sub.*e*N.sub.4-n*O.sub.n*], wherein A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and combinations thereof; wherein X is at least one element selected from the group consisting of Si, Ge, Ti, Zr, Hf and combinations thereof; wherein M* is selected from the group including Ca, Sr, Ba and combinations thereof; wherein Z* is selected from the group including Na, K, Rb, Cs, Ag and combinations thereof; wherein A* is selected from the group including Mg, Mn, Zn and combinations thereof; wherein B* is selected from the group including B, Al, Ga and combinations thereof; wherein C* is selected from the group including Si, Ge, Ti, Zr, Hf and combinations thereof; wherein D* is selected from the group including Li, Cu and combinations thereof; wherein E* is selected from the group including P, V, Nb, Ta and combinations thereof; and wherein:
0≤x*≤0.2;
0≤y*≤0.2;
0≤x*+y*≤0.4;
0≤z*<1;
0≤n*≤4;
0≤a*≤4;
0≤b*≤4;
0≤c*≤4;
0≤d*≤4;
0≤e*≤4;
a*+b*+c*+d*+e*=4;
2a*+3b*+4c*+d*+5e*=10−y*−n*+z*; wherein BaSi.sub.4Al.sub.3N.sub.9, SrSiAL.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4 and M*.sub.(1−x*−y*−z*)Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*] may each independently be doped with a rare earth element; and a second phosphor configured to convert the primary radiation at least partly to a second secondary radiation having a peak wavelength in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive and wherein the second phosphor is selected from a group comprising: (MgO).sub.4-s(MgF.sub.2).sub.sGeO.sub.2:Mn.sup.4+ where 0≤s≤4, A′.sub.2Ge.sub.4O.sub.9:Mn.sup.4+ or A′.sub.3A″Ge.sub.8O.sub.18:Mn.sup.4+, where A and A′=Li, Na, K and/or Rb M′.sub.1−y′−zZ.sub.zG.sub.g(BE).sub.b(CE).sub.c(DE).sub.dE.sub.eN.sub.4-nO.sub.n:(RE).sub.y′ where M′=Ca, Sr and/or Ba; Z=Na, K and/or Rb; G=Mg, Mn and/or Zn; BE=B, Al and/or Ga; CE=Si, Ge, Ti and/or Hf; DE=Li and/or Cu; E=P, V, Nb and/or Ta; RE=Eu and/or Yb; with 0≤y′≤0.2; 0≤z<1; 0≤n≤0.5; 0≤g≤4; 0≤b≤4; 0≤c≤4; 0≤d≤4; 0≤e≤4; g+b+c+d+e=4; and 2g+3b+4c+d+5e=10−y′−n+z, and combinations thereof.

2. The radiation-emitting optoelectronic component as claimed in claim 1, wherein the primary radiation is converted fully to the first secondary radiation and the component emits total radiation having a peak wavelength in the electromagnetic spectrum ranging from 475 nm to 500 nm inclusive.

3. The radiation-emitting optoelectronic component as claimed in claim 2, wherein the color point of the total radiation is within a color region defined in the CIE color diagram (1931) by the vertices Cx/Cy=0.1/0.1; 0.2/0.1; 0.225/0.24; 0.35/0.4 and 0.00817/0.547.

4. The radiation-emitting optoelectronic component as claimed in claim 1, wherein the conversion element comprises a second phosphor configured to convert the primary radiation at least partly to a second secondary radiation having a peak wavelength in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive; and wherein the second phosphor is selected from a group comprising (Ca,Sr)AlSiN.sub.3:Eu.sup.2+, (Ca,Sr)AlSiN.sub.3:Yb.sup.2+; (Sr,Ca).sub.3Al.sub.2O.sub.3:Eu.sup.2+; (Sr, Ca,Ba).sub.2Si.sub.5N.sub.8:Eu.sup.2+; SrSiN.sub.2:Eu.sup.2+; SrAlSi.sub.4N.sub.7:Eu.sup.2+; CasSi.sub.2Al.sub.2N.sub.8:Eu.sup.2+; CaS:Eu.sup.2+; Sr[LiAl.sub.3N.sub.4]:Eu.sup.2+; Sr[LiAl.sub.3N.sub.4]:Yb.sup.2+; K.sub.2Ge.sub.4O.sub.9:Mn.sup.4+; Rb.sub.2Ge.sub.4O.sub.9:Mn.sup.4+; Li.sub.3RbGe.sub.8O.sub.18:Mn.sup.4+; Sr.sub.4Al.sub.14O.sub.25:Mn.sup.4+; Mg.sub.2TiO.sub.4:Mn.sup.4+; CaZrO.sub.3:Mn.sup.4+; Gd.sub.3Ga.sub.5O.sub.12:Mn.sup.4+; Al.sub.2O.sub.3:Mn.sup.4+; GdAlO.sub.3:Mn.sup.4+; LaAlO.sub.3:Mn.sup.4+; LiAl.sub.5O.sub.8:Mn.sup.4+; SrTiO.sub.3:Mn.sup.4+; Y.sub.2Ti.sub.2O.sub.7:Mn.sup.4+; Y.sub.2Sn.sub.2O.sub.7:M.sup.n+; CaAl.sub.12O.sub.19:Mn.sup.4+; MgO:Mn.sup.4+; Ba.sub.2LaNbO.sub.6:Mn.sup.4+; K.sub.2SiF.sub.6:Mn.sup.4+; Na.sub.2SiF.sub.6:Mn.sup.4+; K.sub.2TiF.sub.6:Mn.sup.4+; Mg.sub.4GeO.sub.5.5F:Mn.sup.4+, and combinations thereof.

5. The radiation-emitting optoelectronic component as claimed in claim 1, wherein the first phosphor has the formula BaSi.sub.4Al.sub.3N.sub.9:Eu.sup.2+ and the second phosphor has the formula Mg.sub.4GeO.sub.5.5F:Mn.sup.4+, the first phosphor has the formula BaSi.sub.4Al.sub.3N.sub.9:Eu.sup.2+ and the second phosphor has the formula K.sub.2SiF.sub.6:Mn.sup.4+, the first phosphor has the formula ALi.sub.3XO.sub.4:Eu.sup.2+ and the second phosphor has the formula K.sub.2SiF.sub.6:Mn.sup.4+, or the first phosphor has the formula SrSiAl.sub.2O.sub.3N.sub.2:Eu.sup.2+ and the second phosphor has the formula K.sub.2SiF.sub.6:Mn.sup.4+.

6. The radiation-emitting optoelectronic component as claimed in claim 1, wherein the primary radiation is converted partly to the first and second secondary radiations and the component emits a white total radiation and the spectrum of the total radiation has at least three and at most five intensity maxima in the range from 400 nm to 800 nm inclusive.

7. The radiation-emitting optoelectronic component as claimed in claim 6, wherein at least one intensity maximum in each case is in the range from 400 nm to 475 nm inclusive, in the range from 475 nm to 500 nm inclusive and in the range from 600 nm to 700 nm inclusive.

8. The radiation-emitting optoelectronic component as claimed in claim 6, wherein there is no intensity maximum in the range from 500 nm to 600 nm.

9. The radiation-emitting optoelectronic component as claimed in claim 6, wherein the color point of the white total radiation is in a color region which, in the CIE color diagram (1931), lies on the line of the blackbody radiator or with a deviation of up to ±0.02 CX and/or ±0.02 C.sub.y from the line of the blackbody radiator.

10. The radiation-emitting optoelectronic component as claimed in claim 6, wherein the color temperature of the white total radiation is from 30 000 K to 2700 K inclusive.

11. A radiation-emitting optoelectronic component comprising: a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum; and a further semiconductor chip or a further semiconductor laser which, in operation of the component, emits a primary radiation having a peak wavelength in the electromagnetic spectrum from 475 nm to 500 nm inclusive, and a conversion element comprising a second phosphor configured to convert the primary radiation at least partly to a second secondary radiation having a peak wavelength in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive, and wherein the second phosphor is selected from a group comprising: A′.sub.2Ge.sub.4O.sub.9:Mn.sup.4+ or A′.sub.3A″Ge.sub.8O.sub.18:Mn.sup.4+, where A and A′=Li, Na, K and/or Rb; M′.sub.1−y′−zZ.sub.zG.sub.g(BE).sub.b(CE).sub.c(DE).sub.dE.sub.eN.sub.4-nO.sub.n:(RE).sub.y′, where M′=Ca, Sr and/or Ba; Z=Na, K and/or Rb; G=Mg, Mn and/or Zn; BE=B, Al and/or Ga; CE=Si, Ge, Ti and/or Hf; DE=Li and/or Cu; E=P, V, Nb and/or Ta; RE=Eu and/or Yb; with 0≤y′≤0.2; 0≤z<1; 0≤n≤0.5; 0≤g≤4; 0≤b≤4; 0≤c≤4; 0≤d≤4; 0≤e≤4; g+b+c+d+e=4; and 2g+3b+4c+d+5e=10−y′−n+z; and combinations thereof.

12. The component as claimed in claim 1, wherein the first phosphor is selected from a group comprising BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, ALi.sub.3XO.sub.4, and combinations thereof; wherein A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and combinations thereof; and wherein X is at least one element selected from the group consisting of Si, Ge, Ti, Zr, Hf, and combinations thereof.

13. The component as claimed in claim 1, wherein ALi.sub.3XO.sub.4 is selected from a group comprising NaLi.sub.3SiO.sub.4:Eu.sup.2+, NaK(Li.sub.3SiO.sub.4).sub.2:Eu.sup.2+, RbNa.sub.3(Li.sub.3SiO.sub.4).sub.4:Eu.sup.2+, CsKNa.sub.2(Li.sub.3SiO.sub.4).sub.4:Eu.sup.2+, RbKNa.sub.2(Li.sub.3SiO.sub.4).sub.4:Eu.sup.2+, and CsRbNaLi(Li.sub.3SiO.sub.4).sub.4:Eu.sup.2+.

14. A radiation-emitting optoelectronic component comprising: a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum; and a further semiconductor chip or a further semiconductor laser which, in operation of the component, emits a primary radiation in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive, and a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the electromagnetic spectrum from 475 nm to 500 nm inclusive, and wherein the first phosphor comprises at least M*.sub.(1−x*−y*−z*)Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof; wherein A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs and combinations thereof; wherein X is at least one element selected from the group consisting of Si, Ge, Ti, Zr, Hf and combinations thereof; wherein M* is selected from the group comprising of Ca, Sr, Ba and combinations thereof; wherein Z* is selected from the group comprising of Na, K, Rb, Cs, Ag and combinations thereof; wherein A* is selected from the group comprising of Mg, Mn, Zn and combinations thereof; wherein B* is selected from the group comprising of B, Al, Ga and combinations thereof; wherein C* is selected from the group comprising of Si, Ge, Ti, Zr, Hf and combinations thereof; wherein D* is selected from the group comprising of Li, Cu and combinations thereof; wherein E* is selected from the group comprising of P, V, Nb, Ta and combinations thereof; and wherein:
0≤x*≤0.2;
0≤y*≤0.2;
0≤x*+y*≤0.4;
0≤z*<1;
0≤n*≤4;
0≤a*≤4;
0≤b*≤4;
0≤c*≤4;
0≤d*≤4;
0≤e*≤4;
a*+b*+c*+d*+e*=4;
2a*+3b*+4c*+d*+5e*=10−y*−n*+z*; wherein the first phosphor is a combination including at least one additional phosphor selected from the group consisting of BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, and ALi.sub.3XO.sub.4, wherein BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4 and M*.sub.(1−x*−y*−z*)Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*] may each independently be doped with a rare earth element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the illumination apparatus. In the following description, various aspects are described with reference to the following drawings, in which:

(2) FIGS. 1A and 1B show schematic side views of various non-limiting embodiments of radiation-emitting optoelectronic components,

(3) FIGS. 2A to 9A show emission spectra of various working non-limiting examples of radiation-emitting optoelectronic components,

(4) FIGS. 2B to 9B show how many percent of the photons emitted in the total radiation from a working example of a radiation-emitting optoelectronic component are within a range in which the absorption spectrum of a green alga has at least 10% intensity based on the maximum,

(5) FIGS. 2C, 4C, 6C, 7C, 8C and 9C show color points of the white total radiation from various working non-limiting examples of radiation-emitting optoelectronic components in the CIE color diagram (1931),

(6) FIG. 10 shows the absorption spectrum of chlorophyll A, chlorophyll B and a carotenoid,

(7) FIG. 11 shows the absorption spectrum of Scenedesmus acutos,

(8) FIG. 12 shows a color region in the green region in the CIE color diagram (1931).

DETAILED DESCRIPTION

(9) The working example of a radiation-emitting optoelectronic component 1 which is shown in FIG. 1A has a semiconductor chip 2 which, in operation, emits primary radiation in the UV region or blue region of the electromagnetic spectrum. The semiconductor chip 2 is based on aluminum indium gallium nitride. The semiconductor chip 2 is secured on a first contact 4 and a second contact 5 and electrically connected to these contacts. The contacts 4, 5 are electrically connected by vias 4a and 5a.

(10) In the first working example shown in FIG. 1A, the first and second electrical contacts 4, 5 are embedded into an opaque, for example prefabricated, base housing 10 with a recess 11. “Prefabricated” is understood to mean that the base housing 10 has already been formed on the contacts 4, 5, for example by means of injection molding, before the semiconductor chip 2 is mounted onto the contacts 4, 5. The base housing 10 includes, for example, an opaque plastic, and the recess 11 may be coated with a reflective coating of the inner walls. The contacts 4, 5 are formed from a metal having a reflectivity for the primary and/or secondary radiation of greater than 60%, such as greater than 70%, or alternatively than 80%, for example silver or gold.

(11) The conversion element 3 in the working example of FIG. 1A takes the form of an casting and fills the recess 11. The conversion element 3 here includes a silicone or an epoxy resin in which particles of a first phosphor and particles of a second phosphor are embedded. Preference is given here to a combination of a first phosphor of the formula BaSi.sub.2N.sub.2O.sub.2:Eu.sup.2+ with a second phosphor of the formula Sr[LiAl.sub.3N.sub.4]:Eu.sup.2+, of a first phosphor of the formula BaSi.sub.4Al.sub.3N.sub.9:Eu.sup.2+ with a second phosphor of the formula Mg.sub.4GeO.sub.5.5F:Mn.sup.4+, of a first phosphor of the formula BaSi.sub.4Al.sub.3N.sub.9:Eu.sup.2+ with a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+, of a first phosphor of the formula A.sub.2Li.sub.6Si.sub.2O.sub.8:Eu.sup.2+ with a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+, or of a first phosphor of the formula SrSiAl.sub.2O.sub.3N.sub.2:Eu.sup.2+ with a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+. The first phosphor partly converts the primary radiation to a secondary radiation in the green region of the electromagnetic spectrum and the second phosphor partly converts the primary radiation to a secondary radiation in the red region of the electromagnetic spectrum. The total radiation from the component results from a superposition of the primary radiation and the secondary radiation and is white. In this working example, the total radiation is emitted upward via the conversion element 3.

(12) In the working example of a radiation-emitting optoelectronic component 1 shown in FIG. 1B, the conversion element 3, by contrast with the component in FIG. 1A, takes the form of one layer arranged above the semiconductor chip 2. The layer is arranged above the radiation exit surface of the semiconductor chip. It is possible that the layer covers the side walls of the semiconductor chip (not shown here).

(13) In each of FIGS. 2A to 9A, the wavelength λ, in nm is plotted on the x axis and the relative intensity rI on the y axis.

(14) In each of FIGS. 2B to 9B, the relative absorption of a green alga (rA) and the photons emitted within this range (P) in the total radiation from a radiation-emitting optoelectronic component are compared in percent.

(15) FIGS. 2C and 4C and 6C to 9C each show a color point of the total radiation from a working example of a radiation-emitting optoelectronic component in the CIE 1931 color space, with the x fraction of the red base color (C.sub.x) plotted on the x axis and the y fraction of the green base color (C.sub.y) on the y axis. The differently hatched regions indicate the different color regions. The unhatched region in each case shows white color point within the CIE color space.

(16) FIG. 2A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(17) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula BaSi.sub.2O.sub.2N.sub.2:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm and a secondary radiation in the red region of a second phosphor of the formula Mg.sub.4GeO.sub.5.5F:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.323 and C.sub.y=0.327 (shown in FIG. 2C). The spectrum thus has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum here in the range from 400 nm to 475 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(18) It is apparent from FIG. 2C that the color point of the white total radiation G is in a color region around the line of the blackbody radiator (SKL) with a deviation of up to ±0.02 C.sub.x and ±0.02 C.sub.y.

(19) It is apparent inter alia from FIG. 2B that 99% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.1, i.e. 10%, based on the maximum absorption. The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow. The table shows further proportions of photons emitted by the component at relative absorbances of green algae.

(20) FIG. 3A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(21) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 420 nm, a secondary radiation in the green region of a first phosphor of the formula BaSi.sub.2O.sub.2N.sub.2:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm and a secondary radiation in the red region of a second phosphor of the formula Mg.sub.4GeO.sub.5.5F:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.311 and C.sub.y=0.311. The spectrum thus has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum here in the range from 400 nm to 475 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(22) It is apparent inter alia from FIG. 3B that 99% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.1, i.e. 10%, based on the maximum absorption. The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow.

(23) FIG. 4A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(24) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula BaSi.sub.2O.sub.2N.sub.2:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm, and a secondary radiation in the red region of a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The spectrum has four intensity maximum. Three of the intensity maxima correspond to P.sub.b, P.sub.g and P.sub.r; the fourth is identified by IM. IM, based on the main peak having the peak wavelength P.sub.r, is a relative intensity maximum having an intensity of more than 65% of the intensity of the peak wavelength P.sub.r. There is thus one intensity maximum in the range from 400 nm to 475 nm inclusive, one intensity maximum in the range from 475 nm to 500 nm inclusive, and two intensity maxima in the range from 600 nm to 700 nm inclusive. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.314 and C.sub.y=0.312 (shown in FIG. 4C).

(25) It is apparent from FIG. 4C that the color point of the white total radiation G is within a color region which is around the line of the blackbody radiator (SKL) with a deviation of up to ±0.02 C.sub.x and ±0.02 C.sub.y.

(26) It is apparent inter alia from FIG. 4B that 99% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.1, i.e. 10%, based on the maximum absorption. The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow. The table shows further proportions of photons emitted by the component at relative absorbances of green algae.

(27) FIG. 5A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(28) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula BaSi.sub.2O.sub.2N.sub.2:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm, and a secondary radiation in the red region of a second phosphor of the formula Sr[Al.sub.3LiN.sub.4]:Eu.sup.2+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The total radiation G is white overall. The spectrum thus has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum here in the range from 400 nm to 475 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(29) The table in FIG. 5B gives proportions of photons emitted in the total radiation from the component at relative absorbances of green algae. For example, 99% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.1, i.e. 10%, based on the maximum absorption.

(30) The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow.

(31) FIG. 6A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(32) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula BaSi.sub.4Al.sub.3N.sub.9:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm, and a secondary radiation in the red region of a second phosphor of the formula Mg.sub.4GeO.sub.5.5F:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.316 and C.sub.y=0.312 (shown in FIG. 6C). The spectrum has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum in the range from 400 nm to 475 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(33) It is apparent from FIG. 6C that the color point of the white total radiation G is within a color region which is around the line of the blackbody radiator (SKL) with a deviation of up to ±0.02 C.sub.x and ±0.02 C.sub.y.

(34) The table in FIG. 6B gives proportions of photons emitted in the total radiation from the component at relative absorbances of green algae. For example, 68% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.5, i.e. 50%, based on the maximum absorption. The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow.

(35) FIG. 7A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(36) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula BaSi.sub.4Al.sub.3N.sub.9:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm, and a secondary radiation in the red region of a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.321 and C.sub.y=0.308 (shown in FIG. 7C). The spectrum thus has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum here in the range from 400 nm to 485 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(37) It is apparent from FIG. 7C that the color point of the white total radiation G is within a color region which is around the line of the blackbody radiator (SKL) with a deviation of up to ±0.02 C.sub.x and ±0.02 C.sub.y.

(38) The table in FIG. 7B gives proportions of photons emitted in the total radiation from the component at relative absorbances of green algae. For example, 93% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.25, i.e. 25%, based on the maximum absorption.

(39) The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow.

(40) FIG. 8A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(41) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula A.sub.2Li.sub.6Si.sub.2O.sub.8:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm, and a secondary radiation in the red region of a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. The first phosphor of FIG. 8 (wavelength range 470 to 500 nm) is specifically NaK(Li.sub.3SiO.sub.4).sub.2:Eu.sup.2+. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.322 and C.sub.y=0.310 (shown in FIG. 8C). The spectrum thus has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum here in the range from 400 nm to 475 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(42) It is apparent from FIG. 8C that the color point of the white total radiation G is within a color region which is around the line of the blackbody radiator (SKL) with a deviation of up to ±0.02 C.sub.x and ±0.02 C.sub.y.

(43) The table in FIG. 8B gives proportions of photons emitted in the total radiation from the component at relative absorbances of green algae. For example, 89% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.3, i.e. 30%, based on the maximum absorption. The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow.

(44) FIG. 9A gives a spectrum of the total radiation G from a working example of a radiation-emitting optoelectronic component. In addition, the diagram shows the absorption A of a green alga using the example of Scenedesmus acutus.

(45) The total radiation G is composed of a primary radiation having a peak wavelength (P.sub.b) of about 445 nm, a secondary radiation in the green region of a first phosphor of the formula SrSiAl.sub.2O.sub.3N.sub.2:Eu.sup.2+ having a peak wavelength (P.sub.g) in the range from 475 nm to 500 nm, and a secondary radiation in the red region of a second phosphor of the formula K.sub.2SiF.sub.6:Mn.sup.4+ having a peak wavelength (P.sub.r) in the range from 600 nm to 700 nm. FIG. 9A thus shows the phosphors SrSiAl.sub.2O.sub.3N.sub.2:Eu.sup.2++K.sub.2SiF.sub.6:Mn.sup.4+. The total radiation G is white overall. The color point of the total radiation in the CIE color diagram (1931) is at C.sub.x=0.294 and C.sub.y=0.266 (shown in FIG. 9C). The spectrum thus has three intensity maxima (P.sub.b, P.sub.g, P.sub.a) in the range from 400 nm to 800 nm inclusive. There is one intensity maximum here in the range from 400 nm to 475 nm inclusive, one in the range from 475 nm to 500 nm inclusive, and one in the range from 600 nm to 700 nm inclusive.

(46) It is apparent from FIG. 9C that the color point of the white total radiation G is within a color region which is around the line of the blackbody radiator (SKL) with a deviation of up to ±0.02 C.sub.x and ±0.02 C.sub.y.

(47) The table in FIG. 9B gives proportions of photons emitted in the total radiation from the component at relative absorbances of green algae. For example, 68% of the photons emitted in the total radiation G from the component are within a wavelength range in which the relative absorption of the leaf dye of a green alga is 0.5, i.e. 10%, based on the maximum absorption. The irradiation of green algae with the total radiation from the optoelectronic component in this embodiment can efficiently stimulate these to photosynthesize and hence to grow.

(48) FIG. 10 shows absorption spectra of chlorophyll A (reference sign CA), of chlorophyll B (reference sign CB) and of a carotenoid (reference sign CAR) from Ustin et al., Remote Sensing of Environment 113, Supplemental 1, 2009, S67-S77.

(49) FIG. 11 shows the absorption spectrum A of a green alga using the example of Scenedesmus acutus from Zeinalov et al., Bulg. J. Plant Physiol., 2000, 26(1-2), 58-59.

(50) FIG. 12 shows a color region in the CIE color diagram (1931) which is defined by the vertices C.sub.x/C.sub.y=0.1/0.1; 0.2/0.1; 0.225/0.24; 0.35/0.4 and 0.00817/0.547. In this color region, the color point of the total radiation from a radiation-emitting optoelectronic component is in the green region of the electromagnetic spectrum.

(51) While specific aspects have been described, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the aspects of this disclosure as defined by the appended claims. The scope is thus indicated by the appended claims and all changes that come within the meaning and range of equivalency of the claims are therefore intended to be embraced.

LIST OF REFERENCE SIGNS

(52) C.sub.x x component of the red base color in the CIE color space (1931) C.sub.y y component of the green base color in the CIE color space (1931) λ wavelength rI relative intensity IM relative intensity maximum G total radiation spectrum A absorption of Scenedesmus acutus CA absorption of chlorophyll A CB absorption of chlorophyll B CAR absorption of a carotenoid rA relative absorption P photons emitted P.sub.b peak wavelength of the semiconductor chip P.sub.g peak wavelength of the first phosphor P.sub.r peak wavelength of the second phosphor 1 radiation-emitting optoelectronic component 2 semiconductor chip 2a radiation exit surface 3 conversion element 4 first contact 4a via 5 second contact 5a via 10 base housing 11 recess SKL blackbody radiator line