Flip chip interconnection with reduced current density

10090274 ยท 2018-10-02

Assignee

Inventors

Cpc classification

International classification

Abstract

A method and system for electrically connect a semiconductor device with a flip-chip form factor to a printed circuit board. An exemplary embodiment of the method comprises: aligning solder contacts on the device with a first copper contact and a second copper contact of the external circuitry, and, applying a supply current only directly to a buried layer of the first copper and not directly to the layer which is nearest the device, such that no current is sourced to the device through the layer nearest the device.

Claims

1. A method of directly electrically connecting a device to circuitry of a printed circuit board (PCB), the method comprising: aligning solder contacts on the device with a first copper contact and a second copper contact of the PCB, wherein the first and second copper contacts of the PCB each comprise a plurality of layers, wherein the plurality of layers within each of the first and second copper contacts are electrically connected by metal filled vias; and, applying a source current only directly to a layer of the plurality of layers of the first copper contact other than a layer of the plurality of layers of the first copper contact nearest the solder contacts on the device, such that no current is directly sourced to the device through the layer of the first copper contact nearest the solder contacts on the device; wherein the layer of the plurality of layers of the first copper contact other than the layer of the first copper contact nearest the solder contacts on the device is embedded in the PCB.

2. The method of claim 1, wherein the device has a flip chip form factor.

3. The method of claim 2, wherein the device is a semiconductor device.

4. The method of claim 1, wherein the plurality of layers are each comprised of copper.

5. The method of claim 1, wherein the first copper contact and second copper contact each have more than two layers.

6. A system for directly electrically connecting a device to circuitry of a printed circuit board (PCB), the system comprising: at least one solder contact of the device; at least one copper contact electrically connected to the PCB and the solder contact of the device, each of the at least one copper contact being formed of multiple layers, wherein a first layer of the multiple layers of each of the at least one copper contact is closest to the solder contact of the device and wherein the first layer of each of the at least one copper contact is electrically connected with other layer or layers of the multiple layers by metal filled vias; and, a current source only directly electrically connected to the other layer or layers of the multiple layers of each of the at least one copper contact and is not directly connected to the first layer of each of the at least one copper contact; wherein the other of the multiple layers of each of the at least one copper contact is embedded in the PCB.

7. The system of claim 6, wherein the device has a flip chip form factor.

8. The system of claim 7, wherein the device is a semiconductor device.

9. The system of claim 6, wherein the first layer and the other multiple layers each comprise copper.

10. The system of claim 6, wherein each of the at least one copper contact has more than two layers.

11. A method of directly electrically connecting a device to circuitry of a printed circuit board (PCB), the method comprising: aligning solder contacts on the device with a first copper contact and a second copper contact of the PCB, the first and second copper contacts of the PCB each comprising multiple layers; and, applying a source current directly to a layer of the multiple layers of the first copper contact of the PCB which is not closest to the device, wherein a layer of the multiple layers of the first copper contact closest to the device and the layer to which the source current is applied are electrically connected by metal filled vias; wherein the layer to which the source current is applied is embedded in the PCB.

12. The method of claim 11, wherein the device has a flip chip form factor.

13. The method of claim 12, wherein the device is a semiconductor device.

14. The method of claim 11, wherein the multiple layers each comprise copper.

15. The method of claim 11, wherein the first and second copper contacts each have more than two layers.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 illustrates a conventional printed circuit board (PCB) routing to a flip-chip mounted device;

(2) FIG. 2A illustrates a top view of a conventional layout for attaching a flip-chip die to a PCB;

(3) FIG. 2B illustrates a perspective view of the conventional layout for attaching a flip-chip die to a PCB of FIG. 2A.

(4) FIG. 3A illustrates a perspective view of another conventional layout for attaching a flip-chip die to a PCB;

(5) FIG. 3B illustrates a close up view of the problem area of the conventional layout for attaching a flip-chip die to a PCB of FIG. 3A;

(6) FIG. 3C illustrates a close up view of the problem area of the conventional layout for attaching a flip-chip die to a PCB of FIG. 3B;

(7) FIG. 4A illustrates a perspective view of yet another conventional layout for attaching a flip-chip die to a PCB;

(8) FIG. 4B illustrates a top view of the conventional layout for attaching a flip-chip die to a PCB of FIG. 4A;

(9) FIG. 5A illustrates a perspective view of a layout for attaching a flip-chip die to a PCB according to an exemplary embodiment of the present patent document;

(10) FIG. 5B illustrates a top view of a layout for attaching a flip-chip die to a PCB of FIG. 5A;

(11) FIG. 6 illustrates a cross section view of a system for attaching a device to external circuitry according to an exemplary embodiment of the present patent document.

DETAILED DESCRIPTION OF THE INVENTION

(12) In the following detailed description, reference is made to an exemplary embodiment. The exemplary embodiment is described with sufficient detail to enable those skilled in the art to practice it. It is to be understood that other embodiments may be employed and that various structural, logical, and electrical changes may be made.

(13) FIGS. 5A and 5B illustrate a layout 10 for attaching a flip-chip die (e.g., semiconductor device 18 or the like) to a PCB according to an exemplary embodiment of the present invention. As shown, the layout 10 includes a pair of copper contacts 12 and 14 (i.e., on a substrate, such as a PCBnot shownor the like) providing current flow to and from the device. In the exemplary embodiment, the copper contacts 12 and 14 correspond to a pair of terminals (e.g., source and drain electrodes) of a field-effect transistor (FET) or the like. Further, a pair of solder contacts 16 (e.g., lead, tin, antimony or the like) on the device 18 are disposed adjacent to and in contact with the copper contacts 12 and 14. It should be appreciated that the solder contacts 16 are deposited onto the chip pads of the device 18. Further, each copper finger includes a plurality of copper layers 12A, 12B, 14A and 14B (e.g., two layers in the illustrated embodiment) stacked on one another.

(14) The inventive layout illustrated in FIGS. 5A and 5B preferably removes the conductive connection between the top copper layer 12B, 14B (i.e., the copper layer/trace nearest to the device), such that all current flows from deeper layers 12A, 14A of the copper contact 12, 14 to and/or from the device 18. As shown, the inventive design provides for via holes filled with metal that connect different levels of the copper contacts to the device solder. FIG. 5A illustrates that the via holes extend from the device solder 16 through the copper contact 12, 14, providing a configuration where no current is sourced to the device region through the copper layer nearest the device 12B, 14B. Accordingly, current is sourced through the drain electrode to the device 18 through buried levels of copper 12A, 14A in the copper contact 12, 14. As shown in FIG. 5B, current density is highest at the first via, but current density is still reduced by 40% or more compared with the conventional prior art designs discussed above and illustrated in FIGS. 2-4. Thus, the inventive design removes the problem with current crowding where the top copper layer of the copper contact meets the device's solder as experienced by the prior art designs.

(15) FIG. 6 illustrates a cross section view of a system for attaching a device 40 to external circuitry 30 according to an exemplary embodiment of the present patent document. As may be seen in FIG. 6 and explained above, the copper contact 32 has at least two layers 32A and 32B. Layer 32B is closest to the solder contact 42 of the device 40. To this end, layer 32B is between layer 32A and the solder contact 42. As may also be seen in FIG. 6, layer 32B is electrically connected to layer 32A by vias 34. In a preferred embodiment, vias 34 are filled with a metal.

(16) In some embodiments, the layers of the copper contact 32 that are not closest to the solder layer 42 may be buried within a PCB board 36. In other embodiments, multiple layers of the copper contact 32 that are not exposed directly to the solder contact 42 may be buried or otherwise prevented from direct contact with the solder contact 42.

(17) According to the present patent document, a current supply 60 is only connected to layers of the copper contact that are not in direct contact with the solder contact 42. To this end, in the embodiment shown in FIG. 6, the current source 60 is connected directly only to layer 32A via electrical connection 62. Consequently, current flowing to layer 32B must flow through vias 34.

(18) The above description and drawings are only to be considered illustrative of specific embodiments, which achieve the features and advantages described herein. Modifications and substitutions to specific process conditions can be made. Accordingly, the embodiments of the invention are not considered as being limited by the foregoing description and drawings.