LIGHT SOURCE, LIGHT SOURCE DEVICE, METHOD OF DRIVING LIGHT SOURCE, RAMAN AMPLIFIER, AND RAMAN AMPLIFICATION SYSTEM

Abstract

A light source includes: a seed light source configured to output incoherent seed light having a predetermined bandwidth; and a booster amplifier that is a semiconductor optical amplifier configured to optically amplify the seed light entered through a first end facet and output the amplified light through a second end facet. The booster amplifier has nL being set, which is a product of a refractive index n and a chip length L, so as to simultaneously suppress relative intensity noise (RIN) and ripple in the amplified light.

Claims

1. A light source comprising: a seed light source configured to output incoherent seed light having a predetermined bandwidth; and a booster amplifier that is a semiconductor optical amplifier configured to optically amplify the seed light entered through a first end facet and output the amplified light through a second end facet, wherein the booster amplifier has nL being set, which is a product of a refractive index n and a chip length L, so as to simultaneously suppress relative intensity noise (RIN) and ripple in the amplified light.

2. The light source according to claim 1, wherein the chip length L is 1 mm or more.

3. The light source according to claim 1, wherein the chip length L is 1.5 mm or more.

4. The light source according to claim 1, wherein the chip length L is 2 mm or more.

5. The light source according to claim 1, wherein the seed light source and the booster amplifier are driven with a driving current used to simultaneously suppress the relative intensity noise (RIN) and the ripple in the amplified light.

6. The light source according to claim 1, wherein the booster amplifier is driven to operate in a gain saturation state.

7. The light source according to claim 1, wherein the seed light source is driven with the driving current that outputs the seed light with a power such that a power of the amplified light approaches a maximum.

8. The light source according to claim 1, wherein the seed light source includes at least one of a super-luminescent diode (SLD), a semiconductor optical amplifier, and an amplified spontaneous emission (ASE) light source with a rare-earth-doped optical fiber.

9. The light source according to claim 1, wherein the amplified light output by the booster amplifier has the power of 100 mW or more.

10. The light source according to claim 1, wherein the first end facet and the second end facet of the booster amplifier have respective end-facet reflectivity in a range between 10.sup.?3 and 10.sup.?5.

11. A light source device comprising: the light source according to claim 1; and a driving device configured to drive the light source.

12. A Raman amplifier comprising: the light source according to claim 1; and a Raman amplification optical fiber being input with the amplified light as pumping light.

13. A Raman amplification system comprising: the light source according to claim 1; and a Raman amplification optical fiber being input with the amplified light as pumping light.

14. A method of driving a light source including: a seed light source configured to output incoherent seed light having a predetermined bandwidth; and a booster amplifier that is a semiconductor optical amplifier configured to optically amplify the seed light entered through a first end facet and output the amplified light through a second end facet, the method comprising: setting, in the booster amplifier, nL which is a product of a refractive index n and a chip length L, so as to simultaneously suppress relative intensity noise (RIN) and ripple in the amplified light; and driving the seed light source and the booster amplifier with a driving current used to simultaneously suppress the relative intensity noise (RIN) and the ripple in the amplified light.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG. 1 is a schematic diagram of a light source device according to a first embodiment;

[0024] FIG. 2 is a diagram illustrating a part of a light source module illustrated in FIG. 1;

[0025] FIG. 3 is a diagram illustrating an example of the power spectrum of output light of a booster amplifier;

[0026] FIG. 4 is a diagram illustrating an example of a power (Pf) of output light with respect to Ib;

[0027] FIG. 5 is a diagram illustrating an example of an RIN spectrum of output light;

[0028] FIG. 6 is a diagram schematically illustrating a spectrum in which RIN is suppressed;

[0029] FIG. 7 is a diagram illustrating an example of the power spectrum of output light when setting Is to 0 mA and varying Ib;

[0030] FIG. 8 is a diagram illustrating an example of the power spectrum of output light when varying Is;

[0031] FIG. 9 is a diagram illustrating an example of the Is dependence of the output light power (Pf) for Ib;

[0032] FIG. 10 is a diagram illustrating an example of the RIN spectrum of output light when varying Is;

[0033] FIG. 11 is a diagram illustrated to describe the relationship between suppression of RIN and suppression of ripples;

[0034] FIG. 12 is a diagram illustrating the suppression of Ripple in a case where a round-trip frequency falls within a RIN suppression area;

[0035] FIG. 13 is a diagram illustrating the center wavelengths of power spectra of output light of light source modules No. 11 to 31;

[0036] FIG. 14 is a diagram illustrating the ripple width with respect to Is of light source modules No. 11 to 31;

[0037] FIG. 15 is a schematic diagram of a Raman amplifier according to a second embodiment; and

[0038] FIG. 16 is a schematic diagram of a Raman amplification system according to a third embodiment.

DETAILED DESCRIPTION

[0039] Embodiments are now described with reference to the drawings. Moreover, the present disclosure is not limited to the embodiments described below. Furthermore, in the description of the drawings, the same parts are given the same reference numerals as appropriate, and redundant descriptions are appropriately omitted.

[0040] FIG. 1 is a schematic diagram of a light source device according to a first embodiment. This light source device 100 includes a light source module 10 and driving devices 101 and 102. The light source module 10 is an example of a light source.

[0041] The light source module 10 includes a seed light source 11 which is an SOA, an optical isolator 12, a booster amplifier 13 which is also an SOA, an optical isolator 14, and an output optical fiber 15. The seed light source 11, the optical isolator 12, the booster amplifier 13, and the optical isolator 14 are optically cascaded in this order using an optical fiber, an optical component, or the like.

[0042] The seed light source 11 outputs incoherent seed light L1 with a predetermined band. Incoherent light refers to light that is made up of a collection of uncorrelated photons with a continuous spectrum, rather than a laser light source that oscillates in a single or multiple discrete modes (longitudinal modes). The predetermined band is not particularly limited, and a wide band such as a wavelength bandwidth of, for example, 25 nm or more is preferable. The optical isolator 12 allows the seed light L1 to transmit, inputs the seed light L1 into the booster amplifier 13, and prevents return light traveling from the side of the booster amplifier 13 from entering the seed light source 11. The optical isolator 12 prevents or reduces the instability in the operation of the seed light source 11 caused by the input of return light.

[0043] The booster amplifier 13 optically amplifies the seed light L1 being input and outputs the result as amplified light L2. The optical isolator 14 transmits the amplified light L2 and inputs the amplified light L2 into the output optical fiber 15, and prevents the light traveling from the side of the output optical fiber 15 from entering the booster amplifier 13. The optical isolator 14 prevents or reduces the instability in the operation of the booster amplifier 13 caused by the input of return light.

[0044] The output optical fiber 15 is an optical fiber that guides the amplified light L2 to the outside of the light source module 10. The amplified light L2 is used, for example, as pumping light for Raman amplification.

[0045] The driving devices 101 and 102 are known driving devices for SOA. The driving device 101 supplies the seed light source 11 with a driving current C1. The driving device 102 supplies the booster amplifier 13 with a driving current C2.

[0046] FIG. 2 is a diagram illustrating a part of the light source module 10 presented in FIG. 1. The booster amplifier 13 has a first end facet 13a and a second end facet 13b that face mutually. The booster amplifier 13 receives the seed light L1 through the first end facet 13a and outputs the amplified light L2 to the outside through the second end facet 13b.

[0047] The first end facet 13a and the second end facet 13b are subjected to a reflection reduction treatment such as anti-reflection (AR) coating. Additionally, the first end facet 13a and the second end facet 13b may be subjected to the reflection reduction treatment by being inclined relative to the optical axis of the optical amplification waveguide included in the booster amplifier 13. Such a structure is also called a slanted waveguide structure.

[0048] Assuming that the end-facet reflectivity of the first end facet 13a is denoted as R1 and the end-facet reflectivity of the second end facet 13b is denoted as R2, for example, R1 and R2 fall in a range between 10.sup.?3 and 10.sup.?5. Alternatively, (R1?R2).sup.1/2 falls in the range, for example, between 10.sup.?3 and 10.sup.?5. The range between 10.sup.?3 and 10.sup.?5 represents an example of a sufficiently practical and feasible numerical range in terms of low reflectivity. The range between 10.sup.?3 and 10.sup.?5 is herein a range that includes both 10.sup.?3 as the upper limit and 10.sup.?5 as the lower limit.

[0049] The characteristics of the light source module 10 is described. FIG. 3 is a diagram illustrating an example of the power spectrum of the output light (amplified light) from the booster amplifier. FIG. 3 illustrates a case of setting Is to 50 mA and setting Ib to 800 mA, where Is denotes the driving current C1 supplied to the seed light source 11, and Ib denotes the driving current C2 supplied to the booster amplifier 13. The power spectrum of the output light in FIG. 3 generally exhibits a Gaussian-shaped spectrum, with a full width half maximum (FWHM) of approximately 25 nm to 30 nm.

[0050] FIG. 4 is a diagram illustrating an example of the power (Pf) of the output light (amplified light) from the booster amplifier with respect to Ib. FIG. 4 illustrates a case of setting Is to 50 mA. In the case of FIG. 4, it can be seen that when Ib is 100 mA, Pf is approximately 20 mW, and when Ib is 800 mA, Pf is approximately 120 mW. Moreover, FIGS. 3 and 4 are examples of light source modules that are manufactured using semiconductor optical amplifiers with substantially similar characteristics as the seed light source and the booster amplifier.

[0051] In this regard, the inventors of the present disclosure have found that in the light source module 10 as illustrated in FIG. 1, by suitably setting the product of a refractive index n and a chip length L of the booster amplifier 13, denoted as nL, it is possible to achieve a state where RIN and ripple are simultaneously suppressed. The refractive index n of the booster amplifier 13 refers to the refractive index that acts on the seed light within the booster amplifier 13 until the seed light being input to the booster amplifier 13 is output as amplified light, which is the refractive index of the active layer of the booster amplifier 13. The following sequentially describes the suppression of RIN, the suppression of ripple, and then the relationship between suppression of RIN and suppression of ripple.

[0052] FIG. 5 is a diagram illustrating an example of the RIN spectrum of the output light. Specifically, FIG. 5 illustrates the results obtained by measuring the RIN of the output light from light source modules No. 1 to 3, which are fabricated as examples of the light source module 10. Moreover, the light source modules No. 1 to 3 were made using semiconductor optical amplifiers with substantially similar characteristics as both the seed light source and the booster amplifier, and they have output characteristics equivalent to those illustrated in FIGS. 3 and 4. Additionally, for the light source modules No. 1 to 3, it was confirmed that the end-facet reflectivity, given by (R1?R2).sup.1/2, is in the range between 10.sup.?3 and 10.sup.?5. Furthermore, in FIG. 5, Ts indicates the case temperature of the seed light source (25? C.), and Tb indicates the case temperature of the booster amplifier (25? C.).

[0053] In FIG. 5, only Ib indicates the condition where a driving current of 100 mA is supplied only to the booster amplifier, and no driving current is supplied to the seed light source (i.e., the supplied driving current is 0 mA). In this case, since no seed light source to be amplified is input to the booster amplifier, it operates merely as an ASE light source. On the other hand, Is+Ib indicates the condition where the driving current of 100 mA is supplied to the booster amplifier and a driving current of 200 mA is supplied to the seed light source.

[0054] As can be seen from FIG. 5, in the case of only Ib, a relatively flat RIN spectrum was obtained for all of the light source modules No. 1 to 3. This RIN is considered to originate from the ASE-to-ASE beat noise in the output light (ASE light) emitted from the booster amplifier as the ASE light source.

[0055] On the other hand, in the case of Is+Ib, it can be seen that for all of the light source modules No. 1 to 3, RIN is suppressed at a specific frequency fc and below. Moreover, in the case of Is+Ib, the seed light (ASE light) emitted by the seed light source is input to the booster amplifier, increasing the internal photon number, and so the booster amplifier is considered to be operating in a gain saturation state. In this regard, notably, in FIG. 5, despite Ib being a relatively low current of 100 mA and the power of the output light from the booster amplifier being a comparatively low driving state, it is already in a state of suppression of RIN. This point will be described in detail later.

[0056] FIG. 6 is a diagram schematically illustrating a spectrum in which RIN is suppressed. In this regard, since the output light emitted from the light source, such as the light source module in the embodiment, is ASE light from an SOA, its RIN is supposed to be determined by the magnitude of the ASE-to-ASE beat noise. In FIG. 6, the level of a line 210 represents the level of the ASE-to-ASE beat noise.

[0057] The power spectrum width of the ASE light of a typical SOA spans several tens of nanometers, which corresponds to a several THz in frequency. The measurement bandwidth for RIN is sufficiently small as several tens of GHZ, so RIN is calculated using the following Equation (1) (refer to Fiber optic test and measurement/edited by Dennis Derickson. Upper Saddle River, 1998):

[00001]$\begin{array}{cc}\mathrm{RIN}=0\text{.66}/?v_{\mathrm{ASE}}\left[{\mathrm{Hz}}^{-1}\right]& \left(1\right)\end{array}$

[0058] In this Equation, 0.66 is the coefficient in the case where the power spectrum of the ASE light is Gaussian, and ?V.sub.ASE is the FWHM of the power spectrum.

[0059] For example, the power spectrum of the output light illustrated in FIG. 3 is Gaussian with an FWHM of approximately 30 nm, and so using the above Equation (1), RIN is calculated to be approximately-127 dB/Hz. This value roughly matches the result illustrated in FIG. 5.

[0060] On the other hand, the RIN of the SOA operating in the gain saturation state is suppressed in a frequency region 211 lower than fc, also called a corner frequency 213. For example, the suppression of RIN of approximately 10 dB to 20 dB from the level of the line 210 has been reported (refer to US Patent Publication No. 2014/0153083, YAMATOYA, T.; KOYAMA, F.; IGA, K., and ZHAO, Mingshan; MORTHIER, Geert; BAETS, Roel.). Moreover, a line 212 is the level of shot noise.

[0061] Herein, the suppression of RIN means that the RIN is suppressed by 10 dB or more compared to the RIN calculated using the above Equation (1). The degree of suppression of RIN may further be 16 dB or less, or even 20 dB or less.

[0062] The suppression of ripple is now described. Specifically, the power spectrum of the output light from the light source module (referred to as light source module No. 4) with equivalent output characteristics to the light source module No. 1 was measured while varying the driving conditions of the seed light source and the booster amplifier.

[0063] FIG. 7 is a diagram illustrating an example of the power spectrum of output light when setting Is to 0 mA and varying Ib. FIG. 8 is a diagram illustrating an example of the power spectrum of output light when varying Is.

[0064] In FIG. 7, a ripple occurs in both cases when Ib is 200 mA and 800 mA. In particular, in the case where Ib is 200 mA, a ripple occurs despite the power of the output light being relatively low, approximately 18 mW. Additionally, a ripple was particularly likely to occur in the case of Is being set to 0 mA. As mentioned above, this ripple is attributed to the reflection of light on both end facets of the SOA, but it occurs despite the end-facet reflectivity of the booster amplifier being in a sufficiently low range between 10.sup.?3 and 10.sup.?5 as given by (R1?R2).sup.1/2. The fact that a ripple occurs despite such a low driving current (low power) and low reflectivity is an example of how difficult it is to suppress a ripple in a pumping light source for Raman amplification, which has an optical power of several hundred mW in some cases. Moreover, the ripple included components of multiple different periods.

[0065] On the other hand, as illustrated in FIG. 8, fixing Ib at 800 mA and increasing Is to 25 mA suppress the ripple, and increasing Is to 50 mA further suppresses the ripple. However, further increasing Is to 400 mA causes the ripple to increase again.

[0066] As illustrated in FIG. 8, if the seed light is input to the booster amplifier, it reaches the gain saturation state, where a region of suppressed ripple exists. This indicates that ripples may be suppressed by controlling the power of the seed light that is input to the booster amplifier without lowering the end-facet reflectivity of the booster amplifier to such an extent that ripples are suppressed. Moreover, since the ASE light spectrum of the SOA is wide ranging from several nanometers to several tens of nanometers, it is not easy to perform treatment to reduce the end-facet reflectivity (e.g., anti-reflection treatment) so as to cover such a wide band. Thus, the technique of controlling the power of the seed light to suppress ripple is an approach capable of alleviating the conditions for setting the end-facet reflectivity of the booster amplifier and the difficulty in manufacturing it, and so it is a highly effective technique in practice.

[0067] It is preferable to suppress ripples as the ripple becomes smaller. The magnitude of the ripple is indicated by the maximum value of the ripple width (peak-to-bottom) appearing on the power spectrum at a predetermined wavelength (e.g., around 1510 nm). In this case, it is preferable to suppress the ripple so that the width of the ripple from peak to bottom is, for example, 5 dB or less, or even 3 dB or less, 1 dB or less, or 0.5 dB or less.

[0068] Thus, in a method of driving a light source module as a light source, it is preferable to drive the seed light source and the booster amplifier with driving currents (Is and Ib) that simultaneously suppress RIN and ripple in the amplified light.

[0069] Next, the light source module No. 4 indicating ripple characteristics in FIGS. 7 and 8 is described in terms of Is dependence.

[0070] FIG. 9 is a diagram illustrating an example of the Is dependence of the output light power (Pf) for Ib. Comparing the curve at Is=0 mA in FIG. 9 with FIG. 7, it can be seen that at Ib=200 mA, although Pf is small at approximately 18 mW, which is approximately one-third of the maximum output of approximately 60 mW, as illustrated in FIG. 7, ripples are occurring. Additionally, at Ib=800 mA, although Pf is close to the maximum output, it can be seen that the width of the ripple, as illustrated in FIG. 7, is 10 dB or more from peak to bottom.

[0071] On the other hand, FIG. 10 is a diagram illustrating an example of the RIN spectrum of output light when varying Is. Moreover, Ib was fixed at 1000 mA. As can be seen from FIG. 10, RIN is suppressed as Is increases. This is considered to be because the degree of gain saturation of the booster amplifier grows as Is increases.

[0072] In FIG. 10, the ASE-to-ASE beat noise level (RIN.sub.ASE-ASE beat) was calculated to be ?127 dB/Hz based on the above Equation (1). Thus, by extending the line of the graph at Is=40 mA to the high-frequency side like a broken line and examining the corner frequency fc from the intersection of the extended line and the level of RIN.sub.ASE-ASE beat level (dashed line), it was found to be approximately 30 GHz. Moreover, by using similar lines in the graph for other values of Is and examining fc, it found to be approximately 30 GHz. From this, it was confirmed that RIN is suppressed on the side of low frequency from at least approximately 30 GHz in the light source module No. 4.

[0073] The inventor of the present disclosure has considered the relationship between suppression of RIN and suppression of ripple as follows. FIG. 11 is a diagram illustrated to describe the relationship between suppression of RIN and suppression of ripple. In FIG. 11, the chip of an SOA constituting the booster amplifier 13 is illustrated. The chip length of the SOA is denoted as L. The seed light with power P.sub.0 that is input through the first end facet of the SOA is amplified while propagating through the SOA, receives a gain G, becomes amplified light with power GP.sub.0, and reaches the second end facet after a time ?T has elapsed. Then, a part of the amplified light is reflected at the second end facet, and the first reflected light with power ?P.sub.1 propagates toward the first end facet. The first reflected light with the power ?P.sub.1 is amplified while propagating through the SOA, and reaches the first end facet after a time ?T has elapsed. Then, a part of the first reflected light is reflected at the first end facet, becoming the second reflected light with power ?P.sub.2, which further propagates towards the second end facet. In this way, a part of the light is reflected at the end facet and propagated, causing fluctuations in optical power due to the reflection. This fluctuation causes a ripple.

[0074] The time for the fluctuations in optical power to traverse the SOA constituting the booster amplifier 13 back and forth is referred to as TRI (round trip time). If ?.sub.RT is expressed in frequency, it becomes f.sub.RT=1/?.sub.RT. Hereinafter, f.sub.RT may be referred to as round-trip frequency.

[0075] Using the following Equation (2), ?.sub.RT is defined by the length L of the SOA chip and the refractive index n. Furthermore, Equation (3) holds from Equation (2).

[00002]$\begin{array}{cc}{?}_{RT}=\left(2\mathrm{nL}/c\right)& \left(2\right)\end{array}$$\begin{array}{cc}{f}_{RT}=1/{?}_{RT}=\left(c/2\mathrm{nL}\right)& \left(3\right)\end{array}$

[0076] FIG. 12 is a diagram illustrating the suppression of ripple in the case where the round-trip frequency falls within a RIN suppression area. The inventor of the present disclosure has discovered that if the round-trip frequency f.sub.RT, which is the fluctuation frequency, falls within a RIN suppression frequency band (RIN suppression area), the fluctuation is suppressed, thereby restraining the occurrence of ripples. As can be seen from Equations (2) and (3), f.sub.RT depends on the refractive index n and the chip length L. Thus, it is preferable that the product of the refractive index n and the chip length L, nL, is set in the booster amplifier 13 so that both the RIN and ripple are suppressed simultaneously in the amplified light.

[0077] In this regard, In the light source module No. 4, it can be assumed that the chip length L is 1.8 mm and the refractive index n is 3.5. In this case, f.sub.RT is 23.8 GHZ, which falls within the range of the RIN suppression frequency band, i.e., frequencies lower than fc as illustrated in FIG. 10. Thus, nL=3.5?1.8=6.3 is a preferable example of nL.

[0078] Further, in the case where the refractive index n is set to 3.5, an example of the relationship between the chip length L and f.sub.RT is illustrated in Table 1. The chip length L is preferably 1 mm or more, more preferably 1.5 mm or more, and even more preferably 2 mm or more. Moreover, the refractive index n depends on the oscillation wavelength and the composition ratio of the active layer, so it should be noted that Table 1 is just an example.

TABLE-US-00001 TABLE 1 SOA chip length L (mm) f.sub.RT (GHz) 1.0 42 1.5 29 1.8 24 2.0 21 3.0 14

[0079] The RIN suppression frequency band is determined by the Ib or saturation state of the booster amplifier 13 (refer to ZHAO, Mingshan; MORTHIER, Geert; BAETS, Roel.). Additionally, while the refractive index of the booster amplifier 13 depends on factors such as the wavelength of the seed light and the composition ratio of the active layer, it generally ranges from 3.2 to 3.6, and the specific suitable chip length L is determined by the RIN suppression frequency band and the refractive index of the booster amplifier 13. From the viewpoint of ripple suppression, there is no upper limit to the value of L, but considering the internal loss of the SOA chip and the overall size of the light source module 10, a value of around 5 mm or less is preferable.

[0080] As described above, while the ripple is suppressed by the RIN suppression phenomenon, it is natural assumed that the reflectivity of the first end facet 13a and the reflectivity of the second end facet 13b of the booster amplifier 13 are low enough to achieve the ripple suppression effect by suppressing the RIN. Moreover, the reflectivity of the first end facet and the reflectivity of the second end facet in the light source modules No. 1 to 4 described above are approximately within the range of (R1?R2).sup.1/2 between 10.sup.?3 and 10.sup.?5, which is sufficiently low for practical use. Nevertheless, the pumping light source for Raman amplification generally requires outputs of several hundred mW or more, making the ripple easy to occur. However, as described herein, by ensuring that the round-trip frequency derived from nL, which is the product of the chip length L and the refractive index n, falls within the RIN suppression frequency band, the ripple is suppressed even within the range of end-facet reflectivity that is widely used in practical use.

[0081] Subsequently, the ripple characteristics of light source modules (referred to as light source modules No. 11 to 31) having equivalent output characteristics to the light source module No. 4 are described. FIG. 13 illustrates a center wavelength of the output light power spectrum of the light source modules No. 11 to 31. Moreover, the center wavelength was measured using the RMS technique.

[0082] In the light source modules No. 11 to 31, the chip length of the booster amplifier is uniformly 1.8 mm. However, as illustrated in FIG. 13, the light source modules No. 25 and 26 have longer peak wavelengths than the other light source modules. The reason for this is that in the light source modules No. 25 and 26, the refractive index of the booster amplifier is relatively low.

[0083] FIG. 14 is a diagram illustrating the width of the ripple with respect to Is of the light source modules No. 11 to 31. Moreover, Ib is fixed at a predetermined value. As illustrated in FIG. 14, the width of the ripple in the light source modules No. 25 and 26 is larger than that of the other light source modules. The reason for this is that while the oscillation wavelengths of the light source modules No. 25 and 26 are longer than those of other light source modules, the refractive index of InP-based semiconductor materials has a negative correlation with wavelength, and so it is believed that nL of the booster amplifier becomes smaller than nL in other light source modules.

[0084] As described above, the light source device and light source module according to the embodiments simultaneously suppress RIN and ripple in the amplified light by appropriately setting nL which is the product of the refractive index n and the chip length L of the booster amplifier, and thus, it is suitable as a pumping light source for Raman amplification, especially as a pumping light source for forward pumping, and is particularly excellent in suppressing RIN and suppressing RIN transfer.

[0085] FIG. 15 is a schematic diagram of a Raman amplifier according to a second embodiment. The Raman amplifier 1000 is configured as a forward-pumped distributed optical amplifier that includes the light source module 10 of the first embodiment as a pumping light source. The Raman amplifier 1000 includes the light source device 100 provided with the light source module 10, a signal light input unit 1001, an optical multiplexer 1002, a Raman amplification optical fiber 1003 such as a highly nonlinear optical fiber, and a Raman amplified light output unit 1004.

[0086] The signal light input unit 1001 receives signal light L11. The optical multiplexer 1002 multiplexes the signal light L11 with the amplified light L2, which is output from the output optical fiber 15 of the light source module 10 and is used as pumping light, and inputs the multiplexed signal into the Raman amplification optical fiber 1003. The Raman amplification optical fiber 1003 uses the amplified light L2 as the pumping light to amplify the signal light L11 through Raman amplification. The Raman amplified light output unit 1004 outputs Raman amplified light L12, which is light obtained by amplifying the signal light L11 through Raman amplification.

[0087] The amplified light L2 from the light source module 10 is set to a wavelength that allows the Raman amplification optical fiber 1003 to amplify the signal light L11 through Raman amplification.

[0088] The Raman amplifier 1000 is particularly excellent in suppressing RIN and suppressing RIN transfer.

[0089] FIG. 16 is a schematic diagram of a Raman amplification system according to a third embodiment. The Raman amplification system 2000 is configured as a forward-pumped distributed optical amplification system that includes the light source module 10 of the first embodiment as a pumping light source. The Raman amplification system 2000 includes a light source device 200 provided with the light source module 10, a signal light input unit 2001, a Raman amplification optical fiber 2003 such as a standard single-mode fiber, dispersion-shifted fiber, or non-zero dispersion-shifted fiber, and a Raman amplified light output unit 2004. The standard single-mode fiber is, for example, an optical fiber conforming to the ITU-T G.652 standard.

[0090] The light source device 200 has a configuration that includes an optical multiplexer 201 in addition to the light source device 100. Additionally, as for the Raman amplification optical fiber 2003, for example, an optical fiber for optical communication installed in the field may be used.

[0091] The signal light input unit 2001 receives signal light L21. The optical multiplexer 201 multiplexes the signal light L11 with the amplified light L2, which is output from the output optical fiber 15 of the light source module 10 and is used as pumping light, and inputs the multiplexed light into the Raman amplification optical fiber 2003. The Raman amplification optical fiber 2003 uses the amplified light L2 as pumping light to amplify the signal light L21 through Raman amplification. The Raman amplified light output unit 2004 outputs Raman amplified light L22, which is light obtained by amplifying the signal light L21 through Raman amplification.

[0092] The amplified light L2 from the light source module 10 is set to a wavelength that allows the Raman amplification optical fiber 2003 to amplify the signal light L21 through Raman amplification.

[0093] The Raman amplification system 2000 is particularly excellent in suppressing RIN and suppressing RIN transfer.

[0094] Although the Raman amplifier and Raman amplification system of the embodiments described above are configured as a forward-pumped type, the embodiments are not limited to this configuration and may also be configured as a backward-pumped or bidirectional-pumped type.

[0095] Further, the light source modules and light source devices of the embodiments described above may be widely used not only as a pumping light source for Raman amplification but also as a light source in which RIN and ripple are simultaneously suppressed.

[0096] Additionally, in the embodiments described above, the seed light is ASE light, but it may also be incoherent light such as spontaneous emission (SE).

[0097] Furthermore, in the above embodiments, the seed light source is a semiconductor optical amplifier, but it may also include at least one of a super-luminescent diode (SLD), an SOA, and an ASE light source equipped with a rare-earth-doped optical fiber. Such SLD, SOA and ASE light sources are suitable as incoherent light sources.

[0098] In addition, the present disclosure is not limited to the embodiments described above. Combinations of the various components described above are also included in the present disclosure. Moreover, further effects and modifications may be easily derived by those skilled in the art. Accordingly, the broader aspects of the disclosure are not limited to the embodiments described above, and various modifications are possible.

[0099] According to the present disclosure, a light source, a light source device, a method of driving the light source, and a Raman amplifier and Raman amplification system using the same are provided, in which RIN and ripple are simultaneously suppressed.

[0100] The present disclosure may be utilized for a light source, a light source device, a method of driving the light source, a Raman amplifier, and a Raman amplification system.