One glass solution touch panel and manufacturing method thereof and touch panel display
10067612 ยท 2018-09-04
Assignee
- Boe Technology Group Co., Ltd. (Beijing, CN)
- Beijing Boe Optoelectronics Technology Co., Ltd. (Beijing, CN)
Inventors
- Yingming Liu (Beijing, CN)
- Haisheng Wang (Beijing, CN)
- Shengji Yang (Beijing, CN)
- Liguang Deng (Beijing, CN)
- Yafeng Duan (Beijing, CN)
Cpc classification
H05K7/02
ELECTRICITY
G06F2203/04103
PHYSICS
G06F2203/04111
PHYSICS
International classification
H05K3/12
ELECTRICITY
Abstract
The present disclosure provides a one glass solution touch panel comprising a substrate, a shielding indium tin oxide layer, a black matrix frame arranged on the substrate, metal wirings arranged above the black matrix frame, a metal bridge formed in a touch sensing region, an insulating layer formed on the metal bridge, indium tin oxide electrode layers arranged on the metal wirings, the metal bridge and the insulating layer, and passivation layers arranged on the indium tine oxide electrode layers. An insulating and protecting layer is at least arranged above the black matrix frame and under the metal wirings. Meanwhile, the present disclosure further provides a method for manufacturing the one glass solution touch panel, and a touch panel display comprising the one glass solution touch panel.
Claims
1. A one glass solution touch panel, comprising: a substrate, a shielding indium tin oxide layer, a black matrix frame arranged on the substrate, metal wirings arranged above the black matrix frame, a metal bridge formed in a touch sensing region, an insulating layer formed on the metal bridge, an indium tin oxide electrode layer arranged on the metal wirings, the metal bridge and the insulating layer, and a passivation layer arranged on the indium tin oxide electrode layers, wherein an insulating protective layer is at least arranged above the black matrix frame and under the metal wirings, wherein the shielding indium tin oxide layer is arranged between the black matrix frame and the insulating protective layer, and the projection area that the black matrix frame projects onto the substrate is covered by the projection area that the shielding indium tin oxide layer projects onto the substrate, wherein the shielding indium tin oxide layer is in direct contact with the black matrix frame, wherein the shapes of the patterns of the black matrix frame and that of the shielding indium tin oxide layer are the same, and wherein the shapes of patterns of the passivation layer and that of the black matrix frame are complementary to each other.
2. The one glass solution touch panel according to claim 1, wherein the shielding indium tin oxide layer and the black matrix frame are arranged on the same side of the substrate.
3. The one glass solution touch panel according to claim 1, wherein at least one of the indium tin oxide electrode layer and the shielding indium tin oxide layer is arranged above the black matrix frame.
4. The one glass solution touch panel according to claim 1, wherein the indium tin oxide electrode layer and the metal wirings which are separated by the insulating protective layer are arranged above the black matrix frame.
5. The one glass solution touch panel according to claim 1, wherein a second shielding indium tin oxide layer with the same shapes of patterns as the passivation layer is formed on the passivation layer.
6. The one glass solution touch panel according to claim 1, wherein the one glass solution touch panel further comprises a flexible printed circuit arranged on the indium tin oxide electrode layer.
7. A touch panel display, wherein the touch panel display comprises the one glass solution touch panel according to claim 1.
8. The one glass solution touch panel according to claim 1, wherein the shapes of patterns of the passivation layer and that of the shielding indium tin oxide layer are complementary to each other.
9. The one glass solution touch panel according to claim 1, wherein the shielding indium tin oxide layer is arranged between the black matrix frame and the insulating protective layer in a direction perpendicular to the substrate.
10. The one glass solution touch panel according to claim 1, wherein the shielding indium tin oxide layer is a continuous structure.
11. The one glass solution touch panel according to claim 1, wherein the black matrix frame, the shielding indium tin oxide layer, the insulating protective layer, and the metal wirings are sequentially provided on the substrate.
12. A method for manufacturing the one glass solution touch panel, comprising: forming a black matrix frame on a substrate; forming a shielding indium tin oxide layer on the substrate where the black matrix frame is formed; forming an insulating protective layer on the substrate where the shielding indium tin oxide layer is formed; forming metal wirings and a metal bridge on the substrate where the insulating protective layer is formed; forming an insulating layer on the substrate where the metal bridge is formed; forming a indium tin oxide electrode layer on the substrate where the metal wirings, the insulating protective layer, the metal bridge and the insulating layer are formed; forming a passivation layer on the substrate where the insulating layer and the indium tin oxide electrode layer are formed, wherein the shielding indium tin oxide layer is between the black matrix frame and the insulating protective layer, and the projection area that the black matrix frame projects onto the substrate is covered by the projection area that the shielding indium tin oxide layer projects onto the substrate, wherein the shielding indium tin oxide layer is in direct contact with the black matrix frame, and wherein a first mask is used to form the black matrix frame and the shielding ITO laver, and the selected photoresist is positive photoresist; a second mask is used to form metal wirings and the metal bridge; a third mask is used to form the insulating laver; and a fourth mask is used to form the indium tin oxide electrode laver; and the first mask is used to form the passivation laver, and the selected photoresist is negative photoresist.
13. A method for manufacturing a one glass solution touch panel, comprising: forming a black matrix frame on a substrate; forming an insulating protective layer on the substrate where the black matrix frame is formed; forming metal wirings and a metal bridge on the substrate where the insulating protective layer is formed; forming an insulating layer on the substrate where the metal bridge is formed; forming an indium tin oxide electrode layer on the substrate where the metal bridge, the insulating layer, the insulting protective layer and the metal wirings are formed; forming a passivation layer on the substrate where the insulating layer and the indium tin oxide electrode layer are formed, forming a shielding indium tin oxide layer on the substrate where the passivation layer is formed, wherein the shielding indium tin oxide layer is between the black matrix frame and the insulating protective layer, and the projection area that the black matrix frame projects onto the substrate is covered by the projection area that the shielding indium tin oxide layer projects onto the substrate, wherein the shielding indium tin oxide layer is in direct contact with the black matrix frame, and wherein a first mask is used to form the black matrix frame and the insulating protective laver, and the selected photoresist is positive photoresist; a second mask is used to form the metal wirings and the metal bridge; a third mask is used to form the insulating laver; and a fourth mask is used to form the indium tin oxide electrode laver; and the first mask is used to form the passivation layer and the shielding indium tin oxide laver, and the selected photoresist is negative photoresist.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) In order to illustrate the technical solution of the embodiments of the present invention more clearly, the drawings of the embodiments will be briefly described below; it is obvious that the drawings as described below are only related to some embodiments of the present invention, and thus are not limitative of the present invention.
(2)
(3)
(4)
(5)
(6)
Reference numerals:
(7) 1. substrate; 2. BM frame; 3. ITO electrode layer; 4. insulating layer; 5. ITO bridge; 6 metal wirings; 7. PVX (passivation layer); 8. FPC (flexible printed circuit); 9 shielding ITO layer; 10. insulating layer; 11. metal bridge
DETAILED DESCRIPTION
(8) The technical solutions of the embodiments of the invention will be described in a clearly and fully understandable way in connection with the drawings related to the embodiments of the invention. It is obvious that the described embodiments are just a portion but not all of the embodiments of the invention. According to the embodiments of the invention, all other embodiments obtained by those ordinary skilled in the art under the premise of without creative efforts are all intend to be within the scope of the invention.
(9) Unless otherwise defined, the technical or scientific terms used herein shall have the general meanings understandable for those ordinarily skilled in the field of the present invention. First, second and the like used in specification and claims of the patent application of the present invention do not show any order, number or importance, but are only used to distinguish different constituent portions. Likewise, the words such as a, an, the or similar shall not represent limitation of numbers, but mean existence of at least one. The phrases such as include, comprise or similar intend to mean the elements or objects before such words cover or are equivalent to the elements or objects listed after such words, but other elements or objects are not exclusive. The phrases such as connect, connected or similar are not limited to physical or chemical connection, but also include electrical connection, no matter directly or indirectly. The phrases such as upper, lower, left, right and etc. shall be used only to represent relative positions, wherein when the absolute position of the described object is changed, the relative positions may be changed accordingly.
(10) The basic idea of the present disclosure is that: in order to prevent metal from sputtering the black matrix frame, and ensure the chamber to be clean, during the production process, an insulating protective layer is at least arranged above the black matrix frame and under the metal wirings.
(11) In a way of example, the indium tin oxide layer and the shielding black matrix frame are arranged on the same side of the substrate.
(12) In a way of example, at least one of the indium tin oxide electrode layer and the shielding indium tin oxide layer is arranged above the black matrix frame.
(13) Further, the indium tin oxide electrode layer and the metal wirings which are separated by the insulating protective layer are arranged above the black matrix frame.
(14) Next, the embodiments of the invention will be described in further detail by referring to the accompanying drawings.
(15)
(16) Wherein, the shapes of patterns of said BM frame 2 and that of the shielding ITO layer 9 are the same; the shapes of patterns of said PVX 7 and that of the BM frame 2 are complementary to each other, or the shapes of patterns of said PVX 7 and that of the shielding ITO layer 9 are complementary to each other.
(17) A shielding ITO layer (not shown in the figures) having the same shapes of patterns as the PVX 7 may be formed on the PVX 7.
(18) The production process of the one glass solution touch panel shown in
(19) In step 301, a BM is formed on a substrate.
(20) Wherein, a layer of BM material may be deposited on the substrate 1 using the prior art, and then a BM frame 2 may be formed by a mask process, as shown in
(21) Here, the first mask is used to form said BM frame 2, the first mask may adopt an existing mask; and the selected photoresist is positive gum (positive photoresist).
(22) In step 302, a shielding ITO layer is formed on the substrate where the BM frame 2 is formed.
(23) Wherein, a layer of ITO is deposited on the substrate 1 where the BM frame 2 is formed, and then, the shielding ITO layer 9 is formed by the mask process, as shown in
(24) Here, the first mask is also used to form said shielding ITO layer 9, which is the same as the mask used to form the BM frame 2, and the selected photoresist is also positive photoresist.
(25) Generally, when the liquid crystal display (LCD) is displaying images, it needs to input signal from peripheral LCD (the signal is usually stronger than the signal in the display region), and this signal will produce a parasitic capacitance to the touch devices disposing on the upper layer of the LCD, which may cause false touch or other interference. Therefore, the shielding ITO layer 9 arranged in the present disclosure can be used to prevent LCD from interfering signals of the metal wirings surrounding the touch panel.
(26) Here, in a way of example, said shielding ITO layer 9 can be arranged on the frontal side of the substrate 1 and at the same side with other layers, thus it becomes unnecessary to perform the reverse process, and then the process is simplified. Moreover, optionally, the shielding ITO layer 9 with only peripheral shapes of patterns (same as the shapes of patterns of the BM frame 2) reserved thereon may effectively shield peripheral signals of the touch panel, such as, AC signals.
(27) In step 303, an insulating protective layer is formed on the substrate where the shielding ITO layer is formed.
(28) Wherein, a layer of insulating material (such as, SiNx or SiO.sub.2) is deposited on the substrate 1 and the shielding ITO layer 9, and then the insulating protective layer 10 is formed, as shown in
(29) Generally, the BM frame 2 can resist lower temperatures. The shielding ITO layer 9 in the present disclosure can effectively protect the BM frame 2. Performing the entire surface production of the insulating protective layer 10 before producing the subsequent metal wirings 6 can avoid the risk of the metal etching the BM frame 2.
(30) In addition, the insulating protective layer 10 (SiNx and the like) needs to be produced at a lower temperature if without arranging the shielding ITO layer 9, otherwise there will be phenomena of uneven surface, bubbles or the like. Therefore, the arrangement of the shielding ITO layer 9 in the present disclosure also reduces the production difficulty of the insulating protective layer 10, i.e., it can be produced at a high temperature, and thereby reduces the process difficulty in overall.
(31) In step 304, metal wirings and a metal bridge are formed on the substrate where the insulating protective layer is formed.
(32) Wherein, a layer of metal material may be deposited on the substrate 1 where the insulating protective layer 10 is formed, and the metal material may adopt the material used for existing metal wirings, such as, Molybdenum (Mo) and the like, and then the metal wirings 6 and the metal bridge 11 are formed by the mask process, as shown in
(33) Here, the second mask is used to from the metal wirings 6 and the metal bridge 11.
(34) In step 305, an insulating layer is formed on the substrate where the metal bridge is formed.
(35) Wherein, a layer of insulating material (such as, SiNx of SiO.sub.2 and the like) is deposited on the substrate 1 where the metal bridge 11 is formed, and then the insulating layer 4 is formed by the mask process, as shown in
(36) Here, the third mask is used to form the insulating layer 4.
(37) In step 306, an ITO layer is formed on the substrate where the metal wirings, the insulating protective layer, the metal bridge and the insulating layer are formed.
(38) Wherein, a layer of ITO is deposited on the substrate 1 where the metal wirings 6, the insulating protective layer 10, the metal bridge 11 and the insulating layer 4 are formed, and then the ITO electrode layer 3 may be formed by the mask process, as shown in
(39) Here, the forth mask is used to form ITO electrode layer 3.
(40) In step 307, a PVX is formed on the substrate where the insulating layer and the ITO layer are formed.
(41) Wherein, a layer of PVX film is deposited on the substrate 1 where the insulating layer 4 and the ITO electrode layer 3 are formed, and then the PVX 7 is formed by the mask process, as shown in
(42) The PVX 7 is formed by, for example, the first mask, the selected photoresist is negative gum (negative photoresist), and thus the mask costs can be reduced correspondingly.
(43) The method in the present disclosure may further comprise, in a way of example, further forming a shielding ITO layer (not shown) with the same shapes as the PVX 7 on the PVX 7. This helps to further shield the touch electrode of the display region from signal interfering by the display.
(44) Furthermore, the method described in the present disclosure further comprises forming a FPC 8 on the ITO electrode layer 3.
(45) In the above solution of the present disclosure, only four masks are used. However, it needs to use five masks in the prior art. It is obvious that the technical solution of the present disclosure may save the mask costs.
(46) The present disclosure further provides a touch panel display, and the touch panel display comprises the above described one glass solution touch panel.
(47)
(48) Wherein, the shapes of patterns of the BM frame 2 and that of the insulating protective layer 10 are the same; the shapes of patterns of the PVX 7 and that of the BM frame 2, or that of the insulating protective layer 10, are complementary to each other, and the shapes of patterns of the shielding ITO layer 9 and that of the BM frame 2, or that of the insulating protective layer 10, are complementary to each other.
(49) The production process of the one glass solution touch panel shown in
(50) In step 501, a BM is formed on a substrate.
(51) Wherein, a layer of BM material is deposited on a substrate 1 by using the prior art, and then a BM frame 2 is formed by the mask process, as shown in
(52) Here, the first mask is used to form the BM frame 2, which may be an existing mask, and the selected photoresist is positive photoresist.
(53) In step 502, an insulating protective layer is formed on the substrate where the BM is formed.
(54) Wherein, a layer of insulating material (such as, SiNx or SiO.sub.2) is deposited on the substrate 1 formed with the BM frame 2, and then the insulating protective layer 10 is formed by the mask process, as shown in
(55) Here, the first mask is also used to form the insulating protective layer 10, and the selected photoresist is also positive photoresist.
(56) In step 503, metal wirings and a metal bridge are formed on the substrate where the insulating protective layer is formed.
(57) Wherein, a layer of metal material is deposited on the substrate 1 formed with the insulating protective layer 10, and the metal material can be materials used in existing metal wirings. Then, the metal wirings 6 and the metal bridge 11 are formed by the mask process, as shown in
(58) Here, the second mask is used to form the metal wirings 6 and the metal bridge 11.
(59) In step 504, an insulating layer is formed on the substrate where the metal bridge is formed.
(60) Wherein, a layer of insulating material (such as, SiNx or SiO.sub.2 and the like) is deposited on the substrate 1 formed with the metal bridge 11, and then the insulating layer 4 are formed by the mask process, as shown in
(61) Here, the third mask is used to form said insulting layer 4.
(62) In step 505, an ITO layer is formed on the substrate where the metal bridge, the insulating layer, the insulating protective layer, and the metal wirings are formed.
(63) Wherein, a layer of ITO is deposited on the substrate where the metal bridge 11, the insulating layer 4, the insulating protective layer 10, and the metal wirings 6 are formed. Then the ITO electrode layer 3 is formed by the mask process, as shown in the
(64) Here, the forth mask is used to form said ITO electrode layer 3.
(65) In step 506, a PVX is formed on the substrate where the insulating layer and the ITO layer are formed.
(66) Wherein, a layer of PVX film is deposited on the substrate 1 where the insulting layer 4 and the ITO electrode layer 3 are formed, and then the PVX 7 is formed by the mask process, as shown in
(67) In a way of example, the PVX 7 may be formed with the first mask, but the selected photoresist is negative photoresist. In this way, the mask costs can be reduced correspondingly.
(68) The process may further comprise a step 507, that is, forming a shielding ITO layer on the substrate where the PVX is formed.
(69) In this step, a layer of ITO is deposited on the substrate where the PVX 7 is formed, and then the shielding ITO layer 9 is formed by the mask process, as shown in
(70) Here, the arrangement of the shielding ITO layer 9 is mainly used to prevent the liquid crystal display (LCD) from interfering signals of the display region of the touch panel in that the shielding ITO layer may insulate the interference of the LCD signal form the touch devices, i.e., the shielding ITO layer may shield the signal generated by the means of the LCD.
(71) Here, the first mask is used to form the shielding ITO layer 9, and the selected photoresist is negative photoresist.
(72) Further, the method in the present disclosure may further comprise arranging a FPC 8 on the ITO electrode layer 3.
(73) In the above discussed solution, only four masks is used. However, there needs five masks in the prior art. Thus, the mask costs may be saved by using the technical solution discussed in the present disclosure.
(74) The present disclosure further provides a touch panel display. The touch panel display comprises the above mentioned one glass solution touch panel.
(75) What are described above is only illustrative embodiments of the disclosure, but not limitative to the scope of the disclosure. The scopes of the disclosure are defined by the accompanying claims.