Board mountable connectors for ribbon cables with small diameter wires and methods for making
10069230 ยท 2018-09-04
Assignee
Inventors
Cpc classification
H01R4/62
ELECTRICITY
C25D7/00
CHEMISTRY; METALLURGY
H01R12/79
ELECTRICITY
H01R4/2433
ELECTRICITY
International classification
H01R4/26
ELECTRICITY
H01R12/79
ELECTRICITY
H01R4/62
ELECTRICITY
C25D7/00
CHEMISTRY; METALLURGY
Abstract
Embodiments are directed to board (e.g. PCB) mountable connectors for small gauge ribbon cables having a plurality of 28-40 AWG wires wherein the connectors are fabricated from a plurality of adhered layers comprising at least on metal.
Claims
1. A board mountable connector, comprising: a plurality of electrically conductive isolated spikes comprising a distal end and a proximal end, where the distal end of each spike is configured to engage an individual wire of a multi-wire ribbon cable; a plurality of pedestals which are each configured to connect to the proximal end of a spike of the plurality of spikes with each pedestal including a board mounting location; a latching element; a clamping arm rotatably mounted to move from an open position to a latched position when engaged with the latching element such that wires of a ribbon cable, when inserted between the arm and the spikes, make electrical contact with a respective spike; wherein the spikes, pedestals and latching arm are configured to engage a ribbon cable having wires smaller than 28 AWG, wherein the connector is formed from a plurality of adhered layers and wherein the layers are distinguishable by stair stepped side features.
2. The connector of claim 1 wherein the wires are selected from a gauge selected from the group consisting of wires smaller than (1) 32 AWG, (2) 34 AWG, (3) 36 AWG, (4) 38 AWG, and (5) 40 AWG.
3. The connector of claim 1 wherein the board mountable connector is configured to accommodate a ribbon having a number of wires selected from the group consisting of (1) at least two wires, (2) at least four wires, (3) at least six wires, and (4) at least eight wires.
4. The connector of claim 1 wherein the individual spikes have tips that are formed within a single layer.
5. The connector of claim 1 wherein the layer thickness for at least some layers is selected from the group consisting of (1) less than 50 microns, (2) less than 30 microns, (3) less than 20 microns, and (4) less than 10 microns.
6. The connector of claim 1 wherein the connector comprises at least two different metals.
7. The connector of claim 6 wherein at least two different metals exist on the same layer.
8. The connector of claim 1 wherein the connector comprises at least one metal and at least one dielectric electrically isolating the plurality of spikes.
9. The connector of claim 1 wherein the connector comprises a material for improving bonding to a circuit board.
10. A board mountable connector comprising a plurality of individual contactor elements: a plurality of electrically conductive isolated spikes comprising a distal end and a proximal end, where the distal end of each spike is configured to engage an individual wire of a multi-wire ribbon cable; a plurality of pedestals which each connect, directly or indirectly to the proximal end of a respective spike of the plurality of spikes with each pedestal electrically isolated from the other pedestals and with each comprising a curved seat for locating an insulator of a wire; a plurality of base elements connecting the respective spikes to a proximal end of respective back stop elements; a plurality of cap elements located above respective spikes and connected to a distal end of respective back elements, wherein spacings between respective lids and seats and seats and spikes is configured to allow insertion of a wire of a multi-wire ribbon cable between the lids and the seats while bending back the spikes; wherein spacings between respective lids and seats and seats and spikes is configured such that partial retraction of the wires causes the spikes to straighten, penetrate an insulating coating on the respective wire and make electrical contact; wherein the spikes, lids, and stops are configured to engage a ribbon cable having wires smaller than 28 AWG, and wherein each individual contactor element comprises at least one of the spikes, pedestals, base elements, and cap elements.
11. The connector of claim 10 wherein the wires are selected from a gauge selected from the group consisting of wires smaller than (1) 32 AWG, (2) 34 AWG, (3) 36 AWG, (4) 38 AWG, and (5) 40 AWG.
12. The connector of claim 10 wherein the board mountable connector is configured to accommodate a ribbon having a number of wires selected from the group consisting of (1) at least two wires, (2) at least four wires, (3) at least six wires, and (4) at least eight wires.
13. The connector of claim 10 formed from a plurality of adhered layers wherein the layers are distinguishable by stair stepped side features.
14. The connector of claim 10 wherein the individual spikes have tips that are formed within a single layer.
15. The connector of claim 13 wherein the layer thickness for at least some layers is selected from the group consisting of (1) less than 50 microns, (2) less than 30 microns, (3) less than 20 microns, and (4) less than 10 microns.
16. The connector of claim 13 wherein the connector comprises at least two different metals.
17. The connector of claim 16 wherein at least two different metals exist on the same layer.
18. The connector of claim 13 wherein the connector comprises at least one metal and at least one dielectric electrically isolating the plurality of spikes.
19. The connector of claim 10 wherein the connector comprises a material for improving bonding to a circuit board.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
(20) Electrochemical Fabrication in General
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(23) Various embodiments of various aspects of the invention are directed to formation of three-dimensional structures from materials some, or all, of which may be electrodeposited (as illustrated in
(24) The various embodiments, alternatives, and techniques disclosed herein may form multi-layer structures using a single patterning technique on all layers or using different patterning techniques on different layers. For example, various embodiments of the invention may perform selective patterning operations using conformable contact masks and masking operations (i.e. operations that use masks which are contacted to but not adhered to a substrate), proximity masks and masking operations (i.e. operations that use masks that at least partially selectively shield a substrate by their proximity to the substrate even if contact is not made), non-conformable masks and masking operations (i.e. masks and operations based on masks whose contact surfaces are not significantly conformable), and/or adhered masks and masking operations (masks and operations that use masks that are adhered to a substrate onto which selective deposition or etching is to occur as opposed to only being contacted to it). Conformable contact masks, proximity masks, and non-conformable contact masks share the property that they are preformed and brought to, or in proximity to, a surface which is to be treated (i.e. the exposed portions of the surface are to be treated). These masks can generally be removed without damaging the mask or the surface that received treatment to which they were contacted, or located in proximity to. Adhered masks are generally formed on the surface to be treated (i.e. the portion of that surface that is to be masked) and bonded to that surface such that they cannot be separated from that surface without being completely destroyed or damaged beyond any point of reuse. Adhered masks may be formed in a number of ways including (1) by application of a photoresist, selective exposure of the photoresist, and then development of the photoresist, (2) selective transfer of pre-patterned masking material, and/or (3) direct formation of masks from computer controlled depositions of material.
(25) Patterning operations may be used in selectively depositing material and/or may be used in the selective etching of material. Selectively etched regions may be selectively filled in or filled in via blanket deposition, or the like, with a different desired material. In some embodiments, the layer-by-layer build up may involve the simultaneous formation of portions of multiple layers. In some embodiments, depositions made in association with some layer levels may result in depositions to regions associated with other layer levels (i.e. regions that lie within the top and bottom boundary levels that define a different layer's geometric configuration). Such use of selective etching and interlaced material deposition in association with multiple layers is described in U.S. patent application Ser. No. 10/434,519, by Smalley, now U.S. Pat. No. 7,252,861, and entitled Methods of and Apparatus for Electrochemically Fabricating Structures Via Interlaced Layers or Via Selective Etching and Filling of Voids which is hereby incorporated herein by reference as if set forth in full.
(26) Temporary substrates on which structures may be formed may be of the sacrificial-type (i.e. destroyed or damaged during separation of deposited materials to the extent they cannot be reused), non-sacrificial-type (i.e. not destroyed or excessively damaged, i.e. not damaged to the extent they may not be reused, e.g. with a sacrificial or release layer located between the substrate and the initial layers of a structure that is formed). Non-sacrificial substrates may be considered reusable, with little or no rework (e.g. replanarizing one or more selected surfaces or applying a release layer, and the like) though they may or may not be reused for a variety of reasons.
Definitions
(27) This section of the specification is intended to set forth definitions for a number of specific terms that may be useful in describing the subject matter of the various embodiments of the invention. It is believed that the meanings of most if not all of these terms is clear from their general use in the specification but they are set forth hereinafter to remove any ambiguity that may exist. It is intended that these definitions be used in understanding the scope and limits of any claims that use these specific terms. As far as interpretation of the claims of this patent disclosure are concerned, it is intended that these definitions take presence over any contradictory definitions or allusions found in any materials which are incorporated herein by reference.
(28) Build as used herein refers, as a verb, to the process of building a desired structure (or part) or plurality of structures (or parts) from a plurality of applied or deposited materials which are stacked and adhered upon application or deposition or, as a noun, to the physical structure (or part) or structures (or parts) formed from such a process. Depending on the context in which the term is used, such physical structures may include a desired structure embedded within a sacrificial material or may include only desired physical structures which may be separated from one another or may require dicing and/or slicing to cause separation. When a plurality of parts are being formed simultaneously, the process may be termed a batch fabrication process where, for example, the first layer of a plurality of parts is formed, followed by the second layer of the plurality, and continuing with each subsequent layer until all layers of the plurality are formed. In a stacked batch fabrication process, a first group of parts may be formed on a first group of layers after which building of additional layers continues to form a second or subsequent group of parts, and after formation of all groups, sacrificial material may be removed to reveal each part of the various groups of parts.
(29) Build axis or build orientation is the axis or orientation that is substantially perpendicular to substantially planar levels of deposited or applied materials that are used in building up a structure. The planar levels of deposited or applied materials may be or may not be completely planar but are substantially so in that the overall extent of their cross-sectional dimensions are significantly greater than the height of any individual deposit or application of material (e.g. 100, 500, 1000, 5000, or more times greater). The planar nature of the deposited or applied materials may come about from use of a process that leads to planar deposits or it may result from a planarization process (e.g. a process that includes mechanical abrasion, e.g. lapping, fly cutting, grinding, or the like) that is used to remove material regions of excess height. Unless explicitly noted otherwise, vertical as used herein refers to the build axis or nominal build axis (if the layers are not stacking with perfect registration) while horizontal or lateral refers to a direction within the plane of the layers (i.e. the plane that is substantially perpendicular to the build axis).
(30) Build layer or layer of structure as used herein does not refer to a deposit of a specific material but instead refers to a region of a build located between a lower boundary level and an upper boundary level which generally defines a single cross-section of a structure being formed or structures which are being formed in parallel. Depending on the details of the actual process used to form the structure, build layers are generally formed on and adhered to previously formed build layers. In some processes the boundaries between build layers are defined by planarization operations which result in successive build layers being formed on substantially planar upper surfaces of previously formed build layers. In some embodiments, the substantially planar upper surface of the preceding build layer may be textured to improve adhesion between the layers. In other build processes, openings may exist in or be formed in the upper surface of a previous but only partially formed build layers such that the openings in the previous build layers are filled with materials deposited in association with current build layers which will cause interlacing of build layers and material deposits. Such interlacing is described in U.S. patent application Ser. No. 10/434,519 now U.S. Pat. No. 7,252,861. This referenced application is incorporated herein by reference as if set forth in full. In most embodiments, a build layer includes at least one primary structural material and at least one primary sacrificial material. However, in some embodiments, two or more primary structural materials may be used without a primary sacrificial material (e.g. when one primary structural material is a dielectric and the other is a conductive material). In some embodiments, build layers are distinguishable from each other by the source of the data that is used to yield patterns of the deposits, applications, and/or etchings of material that form the respective build layers. For example, data descriptive of a structure to be formed which is derived from data extracted from different vertical levels of a data representation of the structure define different build layers of the structure. The vertical separation of successive pairs of such descriptive data may define the thickness of build layers associated with the data. As used herein, at times, build layer may be loosely referred simply as layer. In many embodiments, deposition thickness of primary structural or sacrificial materials (i.e. the thickness of any particular material after it is deposited) is generally greater than the layer thickness and a net deposit thickness is set via one or more planarization processes which may include, for example, mechanical abrasion (e.g. lapping, fly cutting, polishing, and the like) and/or chemical etching (e.g. using selective or non-selective etchants). The lower boundary and upper boundary for a build layer may be set and defined in different ways. From a design point of view they may be set based on a desired vertical resolution of the structure (which may vary with height). From a data manipulation point of view, the vertical layer boundaries may be defined as the vertical levels at which data descriptive of the structure is processed or the layer thickness may be defined as the height separating successive levels of cross-sectional data that dictate how the structure will be formed. From a fabrication point of view, depending on the exact fabrication process used, the upper and lower layer boundaries may be defined in a variety of different ways. For example by planarization levels or effective planarization levels (e.g. lapping levels, fly cutting levels, chemical mechanical polishing levels, mechanical polishing levels, vertical positions of structural and/or sacrificial materials after relatively uniform etch back following a mechanical or chemical mechanical planarization process). For example, by levels at which process steps or operations are repeated. At levels at which, at least theoretically, lateral extends of structural material can be changed to define new cross-sectional features of a structure. Even though in many embodiments, vertical sidewalls of layers are desired, it is not the case in all embodiments and some amount of upward sloping or downward sloping sidewall featuring may exist as a result of process limitations or by process design. Such features may provide evidence of layer boundaries, layer stacking, and even layer planarization in formed structures. Such features may provide layer-to-layer wall surface variations along the thickness of a layer on the order of a fraction of a micron to several microns or more depending on the layer thickness and process details involved.
(31) Layer thickness is the height along the build axis between a lower boundary of a build layer and an upper boundary of that build layer.
(32) Planarization is a process that tends to remove materials, above a desired plane, in a substantially non-selective manner such that all deposited materials are brought to a substantially common height or desired level (e.g. within 20%, 10%, 5%, or even 1% of a desired layer boundary level). For example, lapping removes material in a substantially non-selective manner though some amount of recession of one material or another may occur (e.g. copper may recess relative to nickel). Planarization may occur primarily via mechanical means, e.g. lapping, grinding, fly cutting, milling, sanding, abrasive polishing, frictionally induced melting, other machining operations, or the like (i.e. mechanical planarization). Mechanical planarization may be followed or preceded by thermally induced planarization (e.g. melting) or chemically induced planarization (e.g. etching). Planarization may occur primarily via a chemical and/or electrical means (e.g. chemical etching, electrochemical etching, or the like). Planarization may occur via a simultaneous combination of mechanical and chemical etching (e.g. chemical mechanical polishing (CMP)).
(33) Structural material as used herein refers to a material that remains part of the structure when put into use.
(34) Supplemental structural material as used herein refers to a material that forms part of the structure when the structure is put to use but is not added as part of the build layers but instead is added to a plurality of layers simultaneously (e.g. via one or more coating operations that applies the material, selectively or in a blanket fashion, to one or more surfaces of a desired build structure that has been released from a sacrificial material.
(35) Primary structural material as used herein is a structural material that forms part of a given build layer and which is typically deposited or applied during the formation of that build layer and which makes up more than 20% of the structural material volume of the given build layer. In some embodiments, the primary structural material may be the same on each of a plurality of build layers or it may be different on different build layers. In some embodiments, a given primary structural material may be formed from two or more materials by the alloying or diffusion of two or more materials to form a single material.
(36) Secondary structural material as used herein is a structural material that forms part of a given build layer and is typically deposited or applied during the formation of the given build layer but is not a primary structural material as it individually accounts for only a small volume of the structural material associated with the given layer. A secondary structural material will account for less than 20% of the volume of the structural material associated with the given layer. In some preferred embodiments, each secondary structural material may account for less than 10%, 5%, or even 2% of the volume of the structural material associated with the given layer. Examples of secondary structural materials may include seed layer materials, adhesion layer materials, barrier layer materials (e.g. diffusion barrier material), and the like. These secondary structural materials are typically applied to form coatings having thicknesses less than 2 microns, 1 micron, 0.5 microns, or even 0.2 microns. The coatings may be applied in a conformal or directional manner (e.g. via CVD, PVD, electroless deposition, or the like). Such coatings may be applied in a blanket manner or in a selective manner. Such coatings may be applied in a planar manner (e.g. over previously planarized layers of material) as taught in U.S. patent application Ser. No. 10/607,931, now U.S. Pat. No. 7,239,219. In other embodiments, such coatings may be applied in a non-planar manner, for example, in openings in and over a patterned masking material that has been applied to previously planarized layers of material as taught in U.S. patent application Ser. No. 10/841,383, now U.S. Pat. No. 7,195,989. These referenced applications are incorporated herein by reference as if set forth in full herein.
(37) Functional structural material as used herein is a structural material that would have been removed as a sacrificial material but for its actual or effective encapsulation by other structural materials. Effective encapsulation refers, for example, to the inability of an etchant to attack the functional structural material due to inaccessibility that results from a very small area of exposure and/or due to an elongated or tortuous exposure path. For example, large (10,000 m.sup.2) but thin (e.g. less than 0.5 microns) regions of sacrificial copper sandwiched between deposits of nickel may define regions of functional structural material depending on ability of a release etchant to remove the sandwiched copper.
(38) Sacrificial material is material that forms part of a build layer but is not a structural material. Sacrificial material on a given build layer is separated from structural material on that build layer after formation of that build layer is completed and more generally is removed from a plurality of layers after completion of the formation of the plurality of layers during a release process that removes the bulk of the sacrificial material or materials. In general sacrificial material is located on a build layer during the formation of one, two, or more subsequent build layers and is thereafter removed in a manner that does not lead to a planarized surface. Materials that are applied primarily for masking purposes, i.e. to allow subsequent selective deposition or etching of a material, e.g. photoresist that is used in forming a build layer but does not form part of the build layer) or that exist as part of a build for less than one or two complete build layer formation cycles are not considered sacrificial materials as the term is used herein but instead shall be referred as masking materials or as temporary materials. These separation processes are sometimes referred to as a release process and may or may not involve the separation of structural material from a build substrate. In many embodiments, sacrificial material within a given build layer is not removed until all build layers making up the three-dimensional structure have been formed. Of course sacrificial material may be, and typically is, removed from above the upper level of a current build layer during planarization operations during the formation of the current build layer. Sacrificial material is typically removed via a chemical etching operation but in some embodiments may be removed via a melting operation or electrochemical etching operation. In typical structures, the removal of the sacrificial material (i.e. release of the structural material from the sacrificial material) does not result in planarized surfaces but instead results in surfaces that are dictated by the boundaries of structural materials located on each build layer. Sacrificial materials are typically distinct from structural materials by having different properties therefrom (e.g. chemical etchability, hardness, melting point, etc.) but in some cases, as noted previously, what would have been a sacrificial material may become a structural material by its actual or effective encapsulation by other structural materials. Similarly, structural materials may be used to form sacrificial structures that are separated from a desired structure during a release process via the sacrificial structures being only attached to sacrificial material or potentially by dissolution of the sacrificial structures themselves using a process that is insufficient to reach structural material that is intended to form part of a desired structure. It should be understood that in some embodiments, small amounts of structural material may be removed, after or during release of sacrificial material. Such small amounts of structural material may have been inadvertently formed due to imperfections in the fabrication process or may result from the proper application of the process but may result in features that are less than optimal (e.g. layers with stairs steps in regions where smooth sloped surfaces are desired. In such cases the volume of structural material removed is typically minuscule compared to the amount that is retained and thus such removal is ignored when labeling materials as sacrificial or structural. Sacrificial materials are typically removed by a dissolution process, or the like, that destroys the geometric configuration of the sacrificial material as it existed on the build layers. In many embodiments, the sacrificial material is a conductive material such as a metal. As will be discussed hereafter, masking materials though typically sacrificial in nature are not termed sacrificial materials herein unless they meet the required definition of sacrificial material.
(39) Supplemental sacrificial material as used herein refers to a material that does not form part of the structure when the structure is put to use and is not added as part of the build layers but instead is added to a plurality of layers simultaneously (e.g. via one or more coating operations that applies the material, selectively or in a blanket fashion, to a one or more surfaces of a desired build structure that has been released from an initial sacrificial material. This supplemental sacrificial material will remain in place for a period of time and/or during the performance of certain post layer formation operations, e.g. to protect the structure that was released from a primary sacrificial material, but will be removed prior to putting the structure to use.
(40) Primary sacrificial material as used herein is a sacrificial material that is located on a given build layer and which is typically deposited or applied during the formation of that build layer and which makes up more than 20% of the sacrificial material volume of the given build layer. In some embodiments, the primary sacrificial material may be the same on each of a plurality of build layers or may be different on different build layers. In some embodiments, a given primary sacrificial material may be formed from two or more materials by the alloying or diffusion of two or more materials to form a single material.
(41) Secondary sacrificial material as used herein is a sacrificial material that is located on a given build layer and is typically deposited or applied during the formation of the build layer but is not a primary sacrificial materials as it individually accounts for only a small volume of the sacrificial material associated with the given layer. A secondary sacrificial material will account for less than 20% of the volume of the sacrificial material associated with the given layer. In some preferred embodiments, each secondary sacrificial material may account for less than 10%, 5%, or even 2% of the volume of the sacrificial material associated with the given layer. Examples of secondary structural materials may include seed layer materials, adhesion layer materials, barrier layer materials (e.g. diffusion barrier material), and the like. These secondary sacrificial materials are typically applied to form coatings having thicknesses less than 2 microns, 1 micron, 0.5 microns, or even 0.2 microns). The coatings may be applied in a conformal or directional manner (e.g. via CVD, PVD, electroless deposition, or the like). Such coatings may be applied in a blanket manner or in a selective manner. Such coatings may be applied in a planar manner (e.g. over previously planarized layers of material) as taught in U.S. patent application Ser. No. 10/607,931, now U.S. Pat. No. 7,239,219. In other embodiments, such coatings may be applied in a non-planar manner, for example, in openings in and over a patterned masking material that has been applied to previously planarized layers of material as taught in U.S. patent application Ser. No. 10/841,383, now U.S. Pat. No. 7,195,989. These referenced applications are incorporated herein by reference as if set forth in full herein.
(42) Adhesion layer, seed layer, barrier layer, and the like refer to coatings of material that are thin in comparison to the layer thickness and thus generally form secondary structural material portions or sacrificial material portions of some layers. Such coatings may be applied uniformly over a previously formed build layer, they may be applied over a portion of a previously formed build layer and over patterned structural or sacrificial material existing on a current (i.e. partially formed) build layer so that a non-planar seed layer results, or they may be selectively applied to only certain locations on a previously formed build layer. In the event such coatings are non-selectively applied, selected portions may be removed (1) prior to depositing either a sacrificial material or structural material as part of a current layer or (2) prior to beginning formation of the next layer or they may remain in place through the layer build up process and then etched away after formation of a plurality of build layers.
(43) Masking material is a material that may be used as a tool in the process of forming a build layer but does not form part of that build layer. Masking material is typically a photopolymer or photoresist material or other material that may be readily patterned. Masking material is typically a dielectric. Masking material, though typically sacrificial in nature, is not a sacrificial material as the term is used herein. Masking material is typically applied to a surface during the formation of a build layer for the purpose of allowing selective deposition, etching, or other treatment and is removed either during the process of forming that build layer or immediately after the formation of that build layer.
(44) Multilayer structures are structures formed from multiple build layers of deposited or applied materials.
(45) Multilayer three-dimensional (or 3D or 3-D) structures are Multilayer Structures that meet at least one of two criteria: (1) the structural material portion of at least two layers of which one has structural material portions that do not overlap structural material portions of the other.
(46) Complex multilayer three-dimensional (or 3D or 3-D) structures are multilayer three-dimensional structures formed from at least three layers where a line may be defined that hypothetically extends vertically through at least some portion of the build layers of the structure will extend from structural material through sacrificial material and back through structural material or will extend from sacrificial material through structural material and back through sacrificial material (these might be termed vertically complex multilayer three-dimensional structures). Alternatively, complex multilayer three-dimensional structures may be defined as multilayer three-dimensional structures formed from at least two layers where a line may be defined that hypothetically extends horizontally through at least some portion of a build layer of the structure that will extend from structural material through sacrificial material and back through structural material or will extend from sacrificial material through structural material and back through sacrificial material (these might be termed horizontally complex multilayer three-dimensional structures). Worded another way, in complex multilayer three-dimensional structures, a vertically or horizontally extending hypothetical line will extend from one or structural material or void (when the sacrificial material is removed) to the other of void or structural material and then back to structural material or void as the line is traversed along at least a portion of the line.
(47) Moderately complex multilayer three-dimensional (or 3D or 3-D) structures are complex multilayer 3D structures for which the alternating of void and structure or structure and void not only exists along one of a vertically or horizontally extending line but along lines extending both vertically and horizontally.
(48) Highly complex multilayer (or 3D or 3-D) structures are complex multilayer 3D structures for which the structure-to-void-to-structure or void-to-structure-to-void alternating occurs once along the line but occurs a plurality of times along a definable horizontally or vertically extending line.
(49) Up-facing feature is an element dictated by the cross-sectional data for a given build layer n and a next build layer n+1 that is to be formed from a given material that exists on the build layer n but does not exist on the immediately succeeding build layer n+1. For convenience the term up-facing feature will apply to such features regardless of the build orientation.
(50) Down-facing feature is an element dictated by the cross-sectional data for a given build layer n and a preceding build layer n1 that is to be formed from a given material that exists on build layer n but does not exist on the immediately preceding build layer n1. As with up-facing features, the term down-facing feature shall apply to such features regardless of the actual build orientation.
(51) Continuing region is the portion of a given build layer n that is dictated by the cross-sectional data for the given build layer n, a next build layer n+1 and a preceding build layer n1 that is neither up-facing nor down-facing for the build layer n.
(52) Minimum feature size or MFS refers to a necessary or desirable spacing between structural material elements on a given layer that are to remain distinct in the final device configuration. If the minimum feature size is not maintained for structural material elements on a given layer, the fabrication process may result in structural material inadvertently bridging what were intended to be two distinct elements (e.g. due to masking material failure or failure to appropriately fill voids with sacrificial material during formation of the given layer such that during formation of a subsequent layer structural material inadvertently fills the void). More care during fabrication can lead to a reduction in minimum feature size. Alternatively, a willingness to accept greater losses in productivity (i.e. lower yields) can result in a decrease in the minimum feature size. However, during fabrication for a given set of process parameters, inspection diligence, and yield (successful level of production) a minimum design feature size is set in one way or another. The above described minimum feature size may more appropriately be termed minimum feature size of gaps or voids (e.g. the MFS for sacrificial material regions when sacrificial material is deposited first). Conversely a minimum feature size for structure material regions (minimum width or length of structural material elements) may be specified. Depending on the fabrication method and order of deposition of structural material and sacrificial material, the two types of minimum feature sizes may be the same or different. In practice, for example, using electrochemical fabrication methods as described herein, the minimum features size on a given layer may be roughly set to a value that approximates the layer thickness used to form the layer and it may be considered the same for both structural and sacrificial material widths. In some more rigorously implemented processes (e.g. with higher examination regiments and tolerance for rework), it may be set to an amount that is 80%, 50%, or even 30% of the layer thickness. Other values or methods of setting minimum feature sizes may be used. Worded another way, depending on the geometry of a structure, or plurality of structures, being formed, the structure, or structures, may include elements (e.g. solid regions) which have dimensions smaller than a first minimum feature size and/or have spacings, voids, openings, or gaps (e.g. hollow or empty regions) located between elements, where the spacings are smaller than a second minimum feature size where the first and second minimum feature sizes may be the same or different and where the minimum feature sizes represent lower limits at which formation of elements and/or spacing can be reliably formed. Reliable formation refers to the ability to accurately form or produce a given geometry of an element, or of the spacing between elements, using a given formation process, with a minimum acceptable yield. The minimum acceptable yield may depend on a number of factors including: (1) number of features present per layer, (2) numbers of layers, (3) the criticality of the successful formation of each feature, (4) the number and severity of other factors effecting overall yield, and (5) the desired or required overall yield for the structures or devices themselves. In some circumstances, the minimum size may be determined by a yield requirement per feature which is as low as 70%, 60%, or even 50%. While in other circumstances the yield requirement per feature may be as high as 90%, 95%, 99%, or even higher. In some circumstances (e.g. in producing a filter element) the failure to produce a certain number of desired features (e.g. 20-40% failure may be acceptable while in an electrostatic actuator the failure to produce a single small space between two moveable electrodes may result in failure of the entire device. The MFS, for example, may be defined as the minimum width of a narrow and processing element (e.g. photoresist element or sacrificial material element) or structural element (e.g. structural material element) that may be reliably formed (e.g. 90-99.9 times out of 100) which is either independent of any wider structures or has a substantial independent length (e.g. 200-1000 microns) before connecting to a wider region.
(53) Sublayer as used herein refers to a portion of a build layer that typically includes the full lateral extents of that build layer but only a portion of its height. A sublayer is usually a vertical portion of build layer that undergoes independent processing compared to another sublayer of that build layer.
(54) Device(s), part(s), component(s), and structure(s) as used herein generally have the same meaning unless a distinction is required by the context in which the terms are used and generally refer to a single layer or multi-layer configuration of one or more structural materials having a desired design or shape, sometimes a design or shape originally set forth in a 3D CAD model or the like. In some contexts, such terms may refer to the actual design (e.g. CAD design) as opposed to a physical structure itself.
(55) Connectors:
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(61) In some alternative embodiments, the latch arm may include one or more compliant regions that provide compliance for individually engaging each wire or groups of wires.
(62) In some embodiments, each individual wire contactor may comprise more than one spike. The spikes may be offset from one another radially relative to the wire and thus may not contact the center of an individual wire but may engage with the sides of the wires (e.g. one or more spikes on each side of a wire. In other multi-spike alternatives, the spikes may be axially spaced and/or both axially and radially spaced. In some such embodiments, two spikes may be provided while in others, more than two spikes may be provided per wire. In some embodiments different numbers of spikes may be supplied on different wires (e.g. depending on anticipated current load each wire). A multi-spike example is shown in
(63) In some further variations of the embodiments of
(64) In some embodiments of the invention, the connector may be used to engage ribbon cable with wires as large as 28 AWG while in other embodiments the connectors may be configured to engage wire in the 30-40 gauge range or possibly even finer wire. In some embodiments, the connectors may engage pre-stripped or bare wire particularly where multiple spikes are used for each wire or other features exist to aid in retention and alignment. In some embodiments an entire 4 wire connector may be as small as 0.10-1.0 mm in Z, the layer stacking direction (e.g. 0.5 mm or 0.25 mm), 0.5-2 mm in Y (e.g. a height of 1.0 mm) and 0.5-4.0 mm in X (e.g. a length or 1.5 mm or 2.0 mm). Of course the length in X will vary with the number of connector that are being engaged. In some embodiments the width of individual contacts may approximate the width of the individual coated wires that are being connected. In some embodiments, the width of individual contactors may be smaller than the individual coated wires by 5-50 microns while the gap between individual contacts elements is in that same range. In some embodiments the thickness of the individual layers may be 2-50 microns while in other embodiments they may be thicker or thinner. In some embodiments tips may be formed with a shell of rhodium or other hard and noble metal backed by a core of a strong but less brittle metal like NiCo or NiP. It will be understood by those of skill in the art, that in other embodiments, connectors may be outside the ranges set forth above.
(65) In some embodiments the entire connector is made from a multi-layer multi-material electrochemical fabrication process without need for any secondary processing. In some embodiments, a solder or other bonding material may be added to the connector during layer fabrication, while in other embodiments, adhesion promoting materials (e.g. gold, titanium, chromium, or the like) be formed as part of the device to aid in bonding or even flow barrier materials (e.g. lacquers, tungsten, and the like) may incorporated to help minimize risk of inadvertent flow of solder into certain locations. In some embodiments, sacrificial material may be removed prior to, or after, transfer to a PCB or other mounting board. In some embodiments the spikes extend above their respective seats only slightly above a length necessary to penetrate any dielectric wire coating while in other embodiments the spikes may extend up to the wire diameter or more beyond the length necessary to penetrate the insulator depending on where and how the spike is to engage the wire (e.g. into the middle of the wire or on the side of the wire). In some embodiments, the connectors may be used without necessity of using any dielectric to keep the individual leads or contacts electrically isolated. In some embodiments, the connectors need not be used for ribbon cables but may be used as single wire connectors. In some embodiments, the multi-layer fabrication process may not transfer the connectors to a separate substrate may incorporate a portion of the their fabrication substrate as a bonding surface or even remain attached to their fabrication substrate which may function as a micro circuit board (see U.S. patent application Ser. No. 15/167,899, entitled Solderless Microcircuit Boards, Components, Methods of Making, and Methods of Using which is incorporated herein by this reference as if set forth in full).
(66) In some alternative embodiments, various materials may be used in the connector at different locations to provide enhanced connector properties. Some materials may be used for strength and resilience, others may be used for contact properties, others may be used for enhanced conductivity, others may be used for dielectric properties, while still others may be used as temporary sacrificial materials. For example, NiCo or NiP may be used as a strong resilient material while rhodium may be used as a hard and noble contact material, copper may be used as a conductivity enhancer and/or as a sacrificial material, while parylene or some other polymer or ceramic may be used as a dielectric.
(67) A second embodiment of the invention is shown in the perspective views of
(68) In some embodiments, the connectors may be mounted to a board by their bases while in other embodiments, their back elements may be mounted to the board. In the former case wire insertion would be parallel to the surface of the board while in the latter case the insertion direction would be perpendicular to the board. In other alternative embodiments, the opening of the connector could be configured to allow an angled insertion. In still other embodiments, the top surface of the connector may be the mounting surface.
(69) In some embodiments the connectors may be formed by stacking layers along the Z-axis with the number of layers and thickness of the layers dictating the depth of the connectors while the length in Y would dictate the height and the length in X would dictate the width of the individual connector elements. In some embodiments the curved seat may be moved from the pedestal to the lid while in other embodiments curved seats may exist on both the pedestal and the lids. In still other embodiments a clamp arm may be mounted on an extra base element or to one of the based elements at the end of an array of contactors and may swing over the top of the other contacts to engage a catch on the opposite sided of the array to help ensure that wires make and retain reliable electrical contact with their respective spikes. In such an alternative a dielectric material may be located on the bottom of the latch arm or on the top of the lids to ensure that no shorting occurs.
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(72) In some embodiments, particularly where the tab will be replaced by another structure that will remain permanently in place joining a plurality of connectors, it may be formed flat against the lid or flat against the back plate, or bottom surface depending on how electrical connection will be made between the board and the connectors.
(73) The various alternatives noted above for the first embodiment also apply to the second embodiment. In some additional variations the back of the individual contactors may have a hole located therein to allow separated wires of the ribbon to pass through during the process of insertion.
(74) Further Comments and Conclusions:
(75) Structural or sacrificial dielectric materials may be incorporated into embodiments of the present invention in a variety of different ways. Such materials may form a third or higher deposited material on selected layers or may form one of the first two materials deposited on some layers. Additional teachings concerning the formation of structures on dielectric substrates and/or the formation of structures that incorporate dielectric materials into the formation process and possibility into the final structures as formed are set forth in a number of patent applications filed Dec. 31, 2003. The first of these filings is U.S. Patent Application No. 60/534,184 which is entitled Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates. The second of these filings is U.S. Patent Application No. 60/533,932, which is entitled Electrochemical Fabrication Methods Using Dielectric Substrates. The third of these filings is U.S. Patent Application No. 60/534,157, which is entitled Electrochemical Fabrication Methods Incorporating Dielectric Materials. The fourth of these filings is U.S. Patent Application No. 60/533,891, which is entitled Methods for Electrochemically Fabricating Structures Incorporating Dielectric Sheets and/or Seed layers That Are Partially Removed Via Planarization. A fifth such filing is U.S. Patent Application No. 60/533,895, which is entitled Electrochemical Fabrication Method for Producing Multi-layer Three-Dimensional Structures on a Porous Dielectric. Additional patent filings that provide teachings concerning incorporation of dielectrics into the EFAB process include U.S. patent application Ser. No. 11/139,262, filed May 26, 2005, now U.S. Pat. No. 7,501,328, by Lockard, et al., and which is entitled Methods for Electrochemically Fabricating Structures Using Adhered Masks, Incorporating Dielectric Sheets, and/or Seed Layers that are Partially Removed Via Planarization; and U.S. patent application Ser. No. 11/029,216, filed Jan. 3, 2005 by Cohen, et al., now abandoned, and which is entitled Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates. These patent filings are each hereby incorporated herein by reference as if set forth in full herein.
(76) Some embodiments may employ diffusion bonding or the like to enhance adhesion between successive layers of material. Various teachings concerning the use of diffusion bonding in electrochemical fabrication processes are set forth in U.S. patent application Ser. No. 10/841,384 which was filed May 7, 2004 by Cohen et al., now abandoned, which is entitled Method of Electrochemically Fabricating Multilayer Structures Having Improved Interlayer Adhesion and which is hereby incorporated herein by reference as if set forth in full. This application is hereby incorporated herein by reference as if set forth in full.
(77) Some embodiments may incorporate elements taught in conjunction with other medical devices as set forth in various U.S. patent applications filed by the owner of the present application and/or may benefit from combined use with these other medical devices: Some of these alternative devices have been described in the following previously filed patent applications: (1) U.S. patent application Ser. No. 11/478,934, by Cohen et al., and entitled Electrochemical Fabrication Processes Incorporating Non-Platable Materials and/or Metals that are Difficult to Plate On; (2) U.S. patent application Ser. No. 11/582,049, by Cohen, and entitled Discrete or Continuous Tissue Capture Device and Method for Making; (3) U.S. patent application Ser. No. 11/625,807, by Cohen, and entitled Microdevices for Tissue Approximation and Retention, Methods for Using, and Methods for Making; (4) U.S. patent application Ser. No. 11/696,722, by Cohen, and entitled Biopsy Devices, Methods for Using, and Methods for Making; (5) U.S. patent application Ser. No. 11/734,273, by Cohen, and entitled Thrombectomy Devices and Methods for Making; (6) U.S. Patent Application No. 60/942,200, by Cohen, and entitled Micro-Umbrella Devices for Use in Medical Applications and Methods for Making Such Devices; and (7) U.S. patent application Ser. No. 11/444,999, by Cohen, and entitled Microtools and Methods for Fabricating Such Tools. Each of these applications is incorporated herein by reference as if set forth in full herein.
(78) Though the embodiments explicitly set forth herein have considered multi-material layers to be formed one after another. In some embodiments, it is possible to form structures on a layer-by-layer basis but to deviate from a strict planar layer on planar layer build up process in favor of a process that interlaces material between the layers. Such alternative build processes are disclosed in previously referenced U.S. application Ser. No. 10/434,519, filed on May 7, 2003, now U.S. Pat. No. 7,252,861, entitled Methods of and Apparatus for Electrochemically Fabricating Structures Via Interlaced Layers or Via Selective Etching and Filling of Voids. The techniques disclosed in this referenced application may be combined with the techniques and alternatives set forth explicitly herein to derive additional alternative embodiments. In particular, the structural features are still defined on a planar-layer-by-planar-layer basis but material associated with some layers are formed along with material for other layers such that interlacing of deposited material occurs. Such interlacing may lead to reduced structural distortion during formation or improved interlayer adhesion. This patent application is herein incorporated by reference as if set forth in full.
(79) The patent applications and patents set forth below are hereby incorporated by reference herein as if set forth in full. The teachings in these incorporated applications can be combined with the teachings of the instant application in many ways: For example, enhanced methods of producing structures may be derived from some combinations of teachings, enhanced structures may be obtainable, enhanced apparatus may be derived, and the like.
(80) TABLE-US-00001 U.S. patent App No., Filing Date U.S. App Pub No., Pub Date U.S. Pat. No., Pub Date Inventor, Title 09/493,496-Jan. 28, 2000 Cohen, Method For Electrochemical Fabrication Pat. 6,790,377-Sep. 14, 2004 10/677,556-Oct. 1, 2003 Cohen, Monolithic Structures Including Alignment and/or 2004-0134772-Jul. 15, 2004 Retention Fixtures for Accepting Components 10/830,262-Apr. 21, 2004 Cohen, Methods of Reducing Interlayer Discontinuities in 2004-0251142A-Dec. 16, 2004 Electrochemically Fabricated Three-Dimensional Structures Pat. 7,198,704-Apr. 3, 2007 10/271,574-Oct. 15, 2002 Cohen, Methods of and Apparatus for Making High Aspect 2003-0127336A-Jul. 10, 2003 Ratio Microelectromechanical Structures Pat. 7,288,178-Oct. 30, 2007 10/697,597-Dec. 20, 2002 Lockard, EFAB Methods and Apparatus Including Spray 2004-0146650A-Jul. 29, 2004 Metal or Powder Coating Processes 10/677,498-Oct. 1, 2003 Cohen, Multi-cell Masks and Methods and Apparatus for 2004-0134788-Jul. 15, 2004 Using Such Masks To Form Three-Dimensional Structures Pat. 7,235,166-Jun. 26, 2007 10/724,513-Nov. 26, 2003 Cohen, Non-Conformable Masks and Methods and 2004-0147124-Jul. 29, 2004 Apparatus for Forming Three-Dimensional Structures Pat. 7,368,044-May 6, 2008 10/607,931-Jun. 27, 2003 Brown, Miniature RF and Microwave Components and 2004-0140862-Jul. 22, 2004 Methods for Fabricating Such Components Pat. 7,239,219-Jul. 3, 2007 10/841,100-May 7, 2004 Cohen, Electrochemical Fabrication Methods Including Use 2005-0032362-Feb. 10, 2005 of Surface Treatments to Reduce Overplating and/or Pat. 7,109,118-Sep. 19, 2006 Planarization During Formation of Multi-layer Three- Dimensional Structures 10/387,958-Mar. 13, 2003 Cohen, Electrochemical Fabrication Method and 2003-022168A-Dec. 4, 2003 Application for Producing Three-Dimensional Structures Having Improved Surface Finish 10/434,494-May 7, 2003 Zhang, Methods and Apparatus for Monitoring Deposition 2004-0000489A-Jan. 1, 2004 Quality During Conformable Contact Mask Plating Operations 10/434,289-May 7, 2003 Zhang, Conformable Contact Masking Methods and 20040065555A-Apr. 8, 2004 Apparatus Utilizing In Situ Cathodic Activation of a Substrate 10/434,294-May 7, 2003 Zhang, Electrochemical Fabrication Methods With 2004-0065550A-Apr. 8, 2004 Enhanced Post Deposition Processing 10/434,295-May 7, 2003 Cohen, Method of and Apparatus for Forming Three- 2004-0004001A-Jan. 8, 2004 Dimensional Structures Integral With Semiconductor Based Circuitry 10/434,315-May 7, 2003 Bang, Methods of and Apparatus for Molding Structures 2003-0234179 A-Dec. 25, 2003 Using Sacrificial Metal Patterns Pat. 7,229,542-Jun. 12, 2007 10/434,103-May 7, 2004 Cohen, Electrochemically Fabricated Hermetically Sealed 2004-0020782A-Feb. 5, 2004 Microstructures and Methods of and Apparatus for Pat. 7,160,429-Jan. 9, 2007 Producing Such Structures 10/841,006-May 7, 2004 Thompson, Electrochemically Fabricated Structures Having 2005-0067292-May 31, 2005 Dielectric or Active Bases and Methods of and Apparatus for Producing Such Structures 10/434,519-May 7, 2003 Smalley, Methods of and Apparatus for Electrochemically 2004-0007470A-Jan. 15, 2004 Fabricating Structures Via Interlaced Layers or Via Selective Pat. 7,252,861-Aug. 7, 2007 Etching and Filling of Voids 10/724,515-Nov. 26, 2003 Cohen, Method for Electrochemically Forming Structures 2004-0182716-Sep. 23, 2004 Including Non-Parallel Mating of Contact Masks and Pat. 7,291,254-Nov. 6, 2007 Substrates 10/841,347-May 7, 2004 Cohen, Multi-step Release Method for Electrochemically 2005-0072681-Apr. 7, 2005 Fabricated Structures 60/533,947-Dec. 31, 2003 Kumar, Probe Arrays and Method for Making 60/534,183-Dec. 31, 2003 Cohen, Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures 11/733,195-Apr. 9, 2007 Kumar, Methods of Forming Three-Dimensional Structures 2008-0050524-Feb. 28, 2008 Having Reduced Stress and/or Curvature 11/506,586-Aug. 8,2006 Cohen, Mesoscale and Microscale Device Fabrication 2007-0039828-Feb. 22, 2007 Methods Using Split Structures and Alignment Elements Pat. 7,611,616-Nov. 3, 2009 10/949,744-Sep. 24, 2004 Lockard, Three-Dimensional Structures Having Feature 2005-0126916-Jun. 16, 2005 Sizes Smaller Than a Minimum Feature Size and Methods Pat. 7,498,714-Mar. 3, 2009 for Fabricating
(81) Though various portions of this specification have been provided with headers, it is not intended that the headers be used to limit the application of teachings found in one portion of the specification from applying to other portions of the specification. For example, it should be understood that alternatives acknowledged in association with one embodiment, are intended to apply to all embodiments to the extent that the features of the different embodiments make such application functional and do not otherwise contradict or remove all benefits of the adopted embodiment. Various other embodiments of the present invention exist. Some of these embodiments may be based on a combination of the teachings herein with various teachings incorporated herein by reference.
(82) In view of the teachings herein, many further embodiments, alternatives in design and uses of the embodiments of the instant invention will be apparent to those of skill in the art. As such, it is not intended that the invention be limited to the particular illustrative embodiments, alternatives, and uses described above but instead that it be solely limited by the claims presented hereafter.