METHOD AND DEVICE FOR THE CONTACTLESS ASSESSMENT OF THE SURFACE QUALITY OF A WAFER

Abstract

A method and a device for contactless assessment of the surface quality of a workpiece (W) according to the angle-resolved scattered light measuring technique comprises an optical sensor (10) which illuminates a measuring spot (14). The intensity of the radiation which is reflected back is detected by means of a line sensor (16), and an intensity characteristic value (Ig) is determined therefrom. A horizontal initial rotation angle () at which the intensity characteristic value is at a maximum is determined. In a measuring operating mode, surface characteristic values are calculated taking into account this initial rotational angle (). The measuring method is defined by extremely high lateral and vertical spatial resolution, extending into the subnanometer range, and by a high measuring speed.

Claims

1. A method for the contactless assessment of the surface quality of a disk-shaped, fine-machined workpiece (W), in particular a wafer (W), according to the angle-resolved scattering light measuring technology, in which an optical sensor (10) emits a beam of rays (24) with defined intensity distribution onto that surface of the workpiece (W) which is to be assessed and illuminates a measuring spot (14), the reflected intensity (Ii) of the radiation is detected by means of a line sensor (16) with a discrete number (i) of photodetectors (18) in a defined angular range () and at least one characteristic value (Ig) is determined therefrom, the workpiece (W) is rotatably mounted in a rotary device (40) and the rotation angle () is detected, the sensor (10) is oriented in a positioning device relative to the surface of the workpiece (W) such that its measuring axis (20) is perpendicular to the surface, wherein the positioning device (46) mounts the sensor (10) movably in radial direction (r) relative to the surface of the workpiece (W) and rotatably about its measuring axis (20) by an angle (), in a set-up mode, the sensor (10) is rotated at a predetermined measuring position about its measuring axis (20) and an initial rotary position with associated initial rotation angle () is determined in which the intensity characteristic value (Ig) is at a maximum, and in which in a measuring mode, a control (50), taking into account this initial rotation angle (), calculates from the detected intensity (Ii) of the photodetectors (18) at least one characteristic value (Aq; Aq*; M) for surface quality.

2. The method according to claim 1, characterized in that in the measuring mode, the control (50) determines further characteristic values (Aq; Aq*; M) for surface quality, in which a rotation angle () is set resulting from the initial rotation angle plus a correction angle.

3. The method according to claim 2, characterized in that the correction angle is 45 or 90.

4. The method according to claim 1, in which in the set-up mode, the sum of intensities of several or all photodetectors (18) of the line sensor (16) is determined as intensity characteristic value (Ig).

5. The method according to claim 1, in which in the measuring mode, the rotary device (40) rotates the workpiece (W) by a predetermined angle () and the sensor (10) scans the surface of the workpiece (W) continuously and the curve of the characteristic value or the characteristic values is determined along the associated circular path.

6. The method according to claim 1, characterized in that in the measuring mode, at least one section of the surface of the workpiece is area-scanned, wherein dependent on the radius (r) of the measuring position on the workpiece, the rotation angle () about the measuring axis (20) of the sensor (10) is changed.

7. The method according to claim 6, characterized in that the change of the rotation angle () is accomplished according to a predetermined function F(r,).

8. The method according to claim 6, characterized in that the area-scanning takes place in a circular, partially circular, spiral-shaped or star-shaped manner.

9. The method according to claim 1, characterized in that the illuminated measuring spot (14) has a diameter of 20 to 300 m.

10. A device for the contactless assessment of the surface quality of a disk-shaped, fine-machined workpiece (W), in particular a wafer (W), according to the angle-resolved scattering light measuring technology, comprising an optical sensor (10) which emits a beam of rays (24) with defined intensity distribution onto the surface of the workpiece (W) to be assessed and illuminates a measuring spot (14), wherein the reflected intensity (Ii) of the radiation is detected by means of a line sensor (16) with a discrete number (i) of photodetectors (18) in a defined angular range () and at least one characteristic value (Ig) is determined therefrom, a rotary device (40) which rotatably mounts the workpiece (W), wherein a rotation angle sensor (44) detects the rotation angle (), a positioning device which orients the sensor (10) relative to the surface of the workpiece (W) such that its measuring axis (20) is perpendicular to the surface, wherein the positioning device (46) mounts the sensor (10) movably in radial direction (r) relative to the surface of the workpiece (W) and rotatably about its measuring axis (20) by an angle (), wherein in a set-up mode, the sensor (10) is rotated at a predetermined measuring position about its measuring axis (20) and an initial rotary position with associated initial rotation angle () is determined in which the intensity characteristic value (Ig) is at a maximum, and wherein in a measuring mode, a control (50), taking into account this initial rotation angle (), calculates from the detected intensity (Ii) of the photodetectors (18) at least one characteristic value (Aq, Aq*; M) for the surface quality.

11. The device according to claim 10, characterized in that in the measuring mode, the control (50) determines further characteristic values (Aq, Aq*; M) for the surface quality, wherein a rotation angle () is set resulting from the initial rotation angle plus a correction angle.

12. The device according to claim 11, characterized in that the correction angle is 45 or 90.

13. The device according to claim 10, in which in the measuring mode, the rotary device (40) rotates the workpiece (W) by a predetermined angle () and the sensor (10) scans the surface of the workpiece (W) continuously and the curve of the characteristic value or the characteristic values is determined along the associated circular path.

14. The device according to claim 10, characterized in that in the measuring mode, at least a section of the surface of the workpiece is area-scanned, wherein dependent on the radius (r) of the measuring position on the workpiece the rotation angle () about the measuring axis (20) of the sensor (10) is changed.

15. The device according to claim 10, characterized in that the illuminated measuring spot (14) comprises a diameter of 20 to 300 m.

Description

[0019] Embodiments of the invention are explained in the following on the basis of the Figures.

[0020] FIG. 1 schematically shows the scattered light measuring principle for measuring the cross roughness.

[0021] FIG. 2a, b show the principle of back grinding and back polishing on wafers.

[0022] FIG. 3 shows grinding grooves on the wafer surface.

[0023] FIG. 4 shows a change of the scattered light distribution given a change in direction of the grinding grooves.

[0024] FIG. 5 shows a schematic determination of an initial rotation angle.

[0025] FIG. 6 shows the scanning principle for the surface of the wafer.

[0026] FIG. 7 shows various scanning strategies.

[0027] FIG. 8 shows an area-wise illustration of measuring results on wafers.

[0028] FIG. 9 shows results of waviness measurements on a CMP machined wafer surface.

[0029] FIG. 10 shows measuring results Aq as a function of radius r, and

[0030] FIG. 11 shows a device in a block diagram.

[0031] FIG. 1 schematically shows the measuring principle, as this is for example also described in the guideline VDA 2009 mentioned further above. An optical sensor 10 for the angle-resolved scattered light measurement comprises as a light source 12 an LED or a semiconductor laser that illuminates the surface O1 of a sample with a beam of rays of defined geometry and intensity distribution. On the surface, the beam of rays produces a measuring spot 14 which is approximately circular with a diameter d. The light re-scattered by the microstructure of the surface O1 is detected within the maximum measurable scattering angle range a by an optical measuring system O. A line sensor 16 comprising a discrete number of photodetectors 18 (only two photodetectors are identified) is arranged such that the individual photodetectors 18 convert, with respect to the discrete scattering angle values , the corresponding intensity values I into electrical signals that are further processed as digital values in a computer-aided control (not illustrated).

[0032] The optical measuring system O is designed as a Fourier optical system or f-theta optical system and transforms the scattering angles into a path which corresponds to the position i of the individual photodetectors 18 along the line sensor 16. Thus, one obtains a distribution H1() along the arrangement of photodetectors 18 with intensities I. By standardizing, the scattering angle distribution H() of the microstructure in the measuring spot 14 can be calculated from this intensity distribution H1().

[0033] The orientation of the sensor 10 with its measuring axis 20 is generally perpendicular to the surface O1 to be measured. In this case, the surface normal F1 of the surface O1 and the measuring axis 20 coincide. This measuring axis 20 in turn corresponds to a central axis or longitudinal axis of the sensor 10. When the surface normal F1 is tilted by an angle A1 with respect to the measuring axis 20 in the direction of the longitudinal axis 22 of the line sensor 16, then the intensity distribution H1() is shifted by a value M1 with respect to the central position of the intensity distribution. This shift M1 can be used to determine, for example, errors in form (form deviations), waviness or an out-of-roundness of the surface O1. The value M1 corresponds to the first statistic moment of the scattering angle distribution curve H1() with =tan() and thus to the center of area of this distribution curve H1().

[0034] As a first statistic moment of a distribution curve H(), M in general calculates to

M=.Math.H()

with

H()=I()/I().

[0035] With respect to the discrete photodetectors i, M calculates to

M=.sub.i=1.sup.n(i).Math.Ii/.sub.i=1.sup.nIi,

where

[0036] i is the control variable from 1 to n,

[0037] n is the maximum number of photodetectors,

[0038] Ii is the measured intensity of the photodetector i, and

[0039] i is the scattering angle assigned to the photodetector i.

[0040] The expression .sub.i=1.sup.n Ii characterizes the total intensity Ig that is incident on the photodetectors 18 of the line detector. This total intensity Ig, which emerges as a by-product in the calculation of M, is used as an intensity characteristic value in the set-up mode, as will be explained in more detail further below.

[0041] When calculating M, a standardization is performed which means that the characteristic value M is independent of the reflectivity of the surface of the workpiece. Based on the characteristic value M, also a fine adjustment of the sensor with respect to a surface normal of the surface to be measured can take place.

[0042] In the left part of the image of FIG. 1, the surface O1 has a stochastic grinding profile. In the right part of the image, a further surface O2 has an asymmetric roughness profile. Accordingly, there results a curve of the intensity distribution H2() and, due to a tilt angle 2 of the surface normal F1 of the surface O2 with respect to the measuring axis 20 in the direction of the longitudinal axis 22 of the line sensor 16, there results a shifting of the scattered light distribution H2() by M2.

[0043] Typical values for the sensor 10 are for the diameter d of the measuring spot 14 approximately 0.03 to 0.9 mm. The aperture angle of the lens O is for example 32. A corresponding number of photodetectors 18 is chosen such that there results a resolution for of 1. The number of measuring and calculation of characteristic values is greater than 1000/second.

[0044] In the angle-resolved scattered light method, one advantage is the insensitiveness with respect to variations in the distance, which may amount to up to 2 mm on plane surfaces.

[0045] An optical center OM of the sensor 10 lies on the measuring axis 20 in the area of the center of the lens O. In order to orient the sensor 10 in normal direction to the surface O1, O2, it is pivoted about the center OM until the characteristic value M is approximately 0 or minimal. From the intensity distribution H1(), a plurality of characteristic values can be determined (see VDA 2009), such as the variance of the scattering angle distribution Aq as a measure for the microstructure of the surface, the characteristic value Aq* as a defect detection signal, e.g. for microcracks, the skewness of the scattering angle distribution Ask as a measure for the profile skewness of the microstructure and numerous other individual characteristic values and multiple characteristic values.

[0046] FIG. 2a shows an important application in which the workpiece is a wafer W, the back of which is thinned by grinding. The wafer W is arranged in a numerical machine tool (not illustrated) on a rotary table DT centrically with respect to the central axis m1 and rotates in arrow direction P1 when machined. A grinding wheel S on which pressure D is applied and which is tilted with its central axis m2 about the central axis m1 of the rotary table DT, rotates in arrow direction P2 and removes material from the back of the wafer W by machining. Due to the mutual rotation of wafer W and grinding wheel S, S-shaped grinding grooves are formed on the surface of the wafer W, which are partially still visible with the naked eye. The material removal shall be implemented such that the grinding forces are distributed on the surface of the wafer W as homogenously as possible, and the surface roughness resulting from the grinding process and the surface deformation shall be as little as possible so that the function of the ICs present in the wafer W is not affected.

[0047] As already mentioned, FIG. 2b shows the CMP production process which effects a further leveling of the grinding structure. Due to the relative movement of wafer W and polishing wheel PS, a polishing pattern superimposes on the grinding pattern, which further complicates the nanotopography of the surface.

[0048] FIG. 3 shows in a further schematic illustration, the surface of the wafer W with S-shaped grinding grooves SR. When the rotation in direction P1 and P2 is exactly kept, the course of the grinding grooves is clearly defined as an analytic function and known from the set-up parameters for the numerical machine tool.

[0049] FIG. 4 schematically shows the measuring principle on a surface section for a surface O3 with grinding grooves extending in a straight manner in longitudinal direction L. At right angles thereto, the cross roughness is defined in cross direction Q. The reflected intensity of the radiation originates from the illuminated measuring spot 14, and is incident on the line sensor 16 in the plane E1 (or in the Fourier plane of the measuring lens O), which line sensor has been omitted for reasons of clarity. The scattered light distribution, in which the distribution H1 is included, has an elliptical structure in this plane E1, wherein the long semiaxis runs in cross direction Q and the short semiaxis runs in longitudinal direction L. When the longitudinal axis 22 of the line sensor 16 coincides with the long semiaxis of the scattered light distribution, then substantially the scattered light originating from the cross roughness is detected. In the right part of the image, the surface section O3 has been rotated anti-clockwise by a horizontal angle , which results in that in the case of an approximately perpendicular measuring axis 20 of the optical sensor 10 also the scattering light distribution rotates by this angle in the plane E1. Now, no longer the entire scattered light distribution associated to the cross roughness is detected along the longitudinal axis 22 of the line sensor 16 but only a part thereof. This in turn means that the characteristic values calculated from the measured intensities of the photodetectors 18 are not clearly related to the surface structure and contain measuring errors. In the practical application of the angle-resolved scattering light measuring technique, the characteristic values for roughness, error of form, waviness etc. are usually referred to the cross roughness or the longitudinal roughness.

[0050] FIG. 5 shows in a schematic illustration the method used in the set-up mode for determining an initial rotation angle for the optical sensor 10. In the upper left part of the image, the top view of the surface of the wafer W with S-shaped grinding structure SR is illustrated. The optical sensor 10 is oriented with its measuring axis 20 perpendicular to the surface of the wafer W at a predetermined measuring position of the wafer W. The scattered light distribution H1 starting from the measuring spot 14 is illustrated in an enlarged detail with respect to the grinding grooves SR. As can be seen, the long semiaxis of the scattered light ellipse extend transversely to the direction of the grinding grooves.

[0051] In the lower image sections A and B, two states are illustrated. In state A, the optical sensor 10 with its line sensor 16 is rotated such that the longitudinal axis 22 of the line sensor 16 does not coincide with the long semiaxis of the elliptic scattered light distribution H1. To establish a correspondence, the line sensor 16 with its longitudinal axis 22 is to be rotated by an horizontal angle about the measuring axis 20. In state B, this is the case, and the intensity distribution H1 is completely detected by the photodetectors of the line sensor 16.

[0052] In the right part of the image, a diagram 30 is illustrated in which the intensity characteristic value Ig is entered as a sum of the intensities of all photodetectors 18 over the rotation angle . In the state B, where the long semiaxis of the elliptic intensity distribution H1 coincides with the longitudinal axis 22 of the line detector 16, the intensity characteristic value Ig is at a maximum. The associated initial rotation angle defines the initial rotary position for the optical sensor 10 in the predetermined measuring position. In radial direction of the surface of the wafer W, the initial rotation angle varies due to the S-shape of the grinding grooves.

[0053] FIG. 6 shows in an illustration the scanning of the surface of the wafer W. The sensor 10 is oriented with its measuring axis 20 at a measuring position of the wafer W perpendicular to the surface and illuminates the measuring spot 14. The re-scattered radiation results in the intensity distribution H1 in the plane E1. As a result of the Fourier-optical imaging with the measuring lens O, the intensity distribution H1 is transformed into the plane of the line sensor 16. By rotating the sensor 10 about its measuring axis 20, the initial rotation angle is determined, in which the intensity characteristic value Ig is at a maximum. In the subsequent measuring mode, then the scanning of the surface of the wafer W takes place, wherein the wafer W is rotated by the rotation angle about its axis m1. Upon each full rotation of the wafer W, the sensor 10 is moved by a small step in radial direction r to the axis m1. In general, the S-shape of the grinding grooves is known from the parameters of the back grinding and with regard thereto, there exists an analytic function F(r, ). With every step, the sensor 10 is rotated such as a result of the known change of the groove direction of the S-shaped grinding grooves SR that the intensity distribution H1 is always fully incident on the line sensor 16 with its long semiaxis. In this way, the entire surface of the wafer W can be scanned. In the right part of the image of FIG. 6, for various radius values r it can be seen based on the double arrows how the longitudinal axis 22 of the line sensor 16 is to be oriented to detect the intensity distribution H1.

[0054] In the case of an unknown change of the grinding direction or the polishing direction, i.e. the exact S-shape of the grinding grooves SR is not known, an associated initial rotation angle can be determined for the associated radius value r at any measuring position on the surface of the wafer W. This initial rotation angle is then true for a certain circular path. For other radius values r, this procedure is to be repeated, or a check of the correct initial rotation angle may be performed. These processes normally run automatically. It is also possible to determine in a forerun-phase at different positions of the surface initial rotation angles corresponding to radius values and a function F(r, ) by interpolation. This function F(r, ) can then be used in the measuring mode to scan a section or the entire surface.

[0055] FIG. 7 shows different strategies when scanning the surface of the wafer W. According to illustration a, the scanning may take place in a circular manner starting from a specific measuring position. In illustration b, the scanning may take place in a star-shaped manner according to the direction arrows shown. In the illustration c, a scanning in the form of a segment of a circle may take place. If desired, also a scanning of a section with Cartesian coordinates x, y is possible.

[0056] In FIG. 8, an illustration of measuring results is shown on two wafers W, each of which having a diameter of 300 mm. The wafer in the illustrations a-c has been ground, and the wafer in the illustrations d-f has additionally been polished. Each time, the scanning was done in a circular manner. In the illustration a and d, Aq values are illustrated measured over the entire surface. Bright areas show high Aq values, equivalent to increased roughness. Dark areas characterize low Aq values. It can be seen that in the boundary area of the wafer in illustration a, the Aq values are higher than in the middle and central area. The mean roughness values Ra fluctuate in the illustration a between 10-6 nm. In the illustration d (polished wafer) between 0.6-1.2 nm. In the illustrations b and e, errors of form in the macro range (warpage) are illustrated over the entire surface of the wafer W. Here, too, bright areas mean high warpage values and dark areas mean low warpage values. As viewed over the entire surface, the flatness or the warpage is in the illustration b in the range from 60 to +60 m (peak to valley) and in the illustration e in the range from 10 to +10 m. In the illustrations c and f, the waviness of the surface measured over the entire surface is illustrated as levels of grey. In the illustration c, it is in the range from 50 to +50 nm and in the illustration f, it is in the range from 5 to +5 nm. The improvement of the surface by the CMP method can clearly be seen (grey scale has been adapted). The roughness values Ra are based on a comparison measurement with a confocal measuring microscope, which, in the case of 1 nm, already operates at its lower tolerance limit. Also the form and the waviness were further improved by the CMP process. The measured waviness amplitudes are under 10 nm in the CMP process.

[0057] FIG. 9 shows results of waviness measurements on a CMP machined wafer surface which had been obtained with a small measuring spot diameter of 30 m and a scanning with a x/y scanning table. The radial structures that can be seen are remainders of the previous grinding and the circular structures are textures from the CMP machining. The amplitudes are under 10 nm.

[0058] FIG. 10 shows in a diagram 32 the curve of the roughness Aq of a ground wafer from the wafer edge (r=0) to the wafer center (r=140 mm). In the characteristic line 34 reference is, for example, made to the arithmetic mean roughness values Ra measured by a confocal microscope; they amount to 16 nm at the edge and 9 nm near the center.

[0059] FIG. 11 shows in a block diagram functional units of a device for performing the described method. The wafer W is arranged centrically on a rotary table 40 and is rotated by a rotary table control 42 by a rotation angle , this rotation angle being detected by a rotation angle sensor 44. A positioning device 46 positions the optical sensor preferably in x, y, z direction so that its measuring axis 20, which coincides with the central axis or longitudinal axis of the sensor 10, is perpendicular to the surface of the wafer W at a predetermined measuring position. Typically, the x axis runs in radial direction of the rotary table 40 so that x values correspond to radius values r of the wafer. The positioning device 46 mounts the sensor 10 rotatably about its measuring axis 20, as a result whereof a horizontal rotation angle can be set. Preferably, the rotary table 40 comprises a vacuum clamping device (not illustrated) which is connected to a vacuum pump and which holds the wafer W. In this way, a fast clamping and changing of a wafer W is possible.

[0060] A computer-aided control 50 controls the positioning device 46 as well as the rotary table 40, the various setting axes , x, y, z, are adjusted by motors. The control 50 is also connected to the sensor 10 and evaluates its signals. The control 50 calculates the various characteristic values from these signals according to VDA 2009 and their curves over the rotation angle and the radius r. The device is suitable for automatic surface testing in the laboratory and in the production of wafers. With the technology currently available, up to 10000 scattered light distributions per second can be detected by the line sensor and the associated characteristic values Ig, Aq and M for roughness, flatness and waviness be calculated. Higher scanning rates are to be expected in the future. In order to scan 100000 measuring positions on a wafer, one only requires 10 s, as a result whereof a comprehensive overall assessment of the wafer on the front and/or back is made possible. This is a considerable advantage of the method described herein. In addition, there is the extremely high lateral and vertical spatial resolution up into the subnanometer range.

LIST OF REFERENCE SIGNS

[0061] 10 sensor [0062] 12 light source [0063] 14 measuring spot [0064] D diameter of the measuring spot [0065] O1 surface [0066] a maximally measurable scattering angle range [0067] O measuring lens [0068] 16 line sensor [0069] 18 photodetectors [0070] scattering angle values [0071] I intensity values [0072] H1() intensity distribution [0073] H() scattering angle distribution [0074] F1 surface normal [0075] 20 measuring axis [0076] 1 angle [0077] 22 longitudinal axis of the line sensor [0078] M1 shift with respect to the central position of the intensity distribution [0079] O2 surface [0080] H2() intensity distribution [0081] 2 tilt angle [0082] M2 shift [0083] Aq variance of the scattering angle distribution; roughness value [0084] Ask profile skewness of the microstructure [0085] Aq* defect detection signal [0086] i running variable [0087] Ii measured intensity of the photodetector i [0088] Ig total intensity, intensity characteristic value [0089] OM optical center of the sensor [0090] W wafer [0091] DT rotary table [0092] m1 central axis of the wafer [0093] P1, P2 arrow directions [0094] D pressure [0095] S grinding wheel [0096] M2 central axis of the grinding wheel [0097] RE rotation unit [0098] PS polishing wheel [0099] E emulsion [0100] RA mean roughness value [0101] SR grinding grooves [0102] L longitudinal direction [0103] Q cross direction [0104] E1 level [0105] horizontal rotation angle [0106] r radius [0107] 30 diagram [0108] 32 diagram for the Aq value [0109] 40 rotary table [0110] 42 rotary table control [0111] rotation angle [0112] 44 rotation angle sensor [0113] 46 positioning device [0114] 50 control