Optical methods for obtaining digital data to be used in determining, shaping or testing of semiconductor or anisotropic materials, or devices, under test through all stages of manufacture or development

Abstract

Methods are described for obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test or manufacture. Optical interferometric techniques can sense a wide region, such as that passing through or reflected off a semiconductor material, which can then be analyzed. In this manner, various characteristics of the resultant transmitted or reflected probing beam, herein called the object wave, are recorded in the resultant interference pattern between the object wave and the reference beam. Likewise, when the semiconductor material, such as an integrated circuit, is stressed by applying a voltage therein by energizing a circuit fabricated therein, the same light will reflect or otherwise pass through the semiconductor material, while being affected by the changes imposed upon or acting within the interior structures or interior surfaces by an applied voltage or signal, or by an incident external stress, thereby resulting in a different pattern.

Claims

1. A method of obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test comprising: (a) providing a beam of light from a light source having a first wavelength; (b) splitting the light beam having a first wavelength into a pair of beams comprising of a reference beam and an object beam, (c) imposing the object beam on the exterior surface of the semiconductor material to generate a reflected object beam reflected from the interior structures or interior surfaces of the semiconductor or anisotropic material, or (d) imposing said object beam on the exterior surface of the semiconductor material to generate a transmitted object beam transmitted through the interior structures or interior surfaces of the semiconductor or anisotropic material, (e) in a first beam instance imposing said object beam of light on a test device over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has a first state of refractive indexes; (f) in a second beam instance imposing said object beam of light on said test device over said spatial region within said test device, wherein said test device has a second state of refractive indexes, (g) imposing the reflected or transmitted object beam and the reference beam onto a detection device to create a plurality of interference patterns of the reflected or transmitted object beam with the reference beam, (h) obtaining, displaying, transmitting, processing, or storing first electric digital data resulting from the interference of said first object beam instance within said device under test representative of voltages within said region and obtaining second electric digital data resulting from the interference of said second beam instance or within said device under test representative of the voltages within said region, and comparing by electric digital data processing said first and second electric digital data to determine operating characteristics within said device under test; (i) displaying, transmitting, processing, or storing at least one of said operating characteristics; and (j) wherein said first state of refractive indexes is at a first voltage potential or electromagnetic field state, and wherein said second state of refractive indexes is at a second voltage potential or electromagnetic field state different or electromagnetic signal from said first voltage potential or electromagnetic field state or electromagnetic signal.

2. The method of claim 1, wherein imposing a second wavelength threshold below which photo-refraction will occur or a second electromagnetic radiation of differing wavelength or intensity to bring about at least one of the following; a photo-refractive effect, a birefringence, a free carrier absorption, a photo injected carrier, a thermal emission, a photoluminescence, or an effect thereof.

3. A method of obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test comprising: (a) providing a beam of light from a light source having a first wavelength; (b) splitting the light beam into a pair of beams comprising of a reference beam and an object beam, (c) imposing the object beam on the exterior surface of the semiconductor material to generate a reflected object beam reflected from the interior structures or interior surfaces of the semiconductor or anisotropic material, or (d) imposing said object beam on the exterior surface of the semiconductor material to generate a transmitted object beam transmitted through the interior structures or interior surfaces of the semiconductor or anisotropic material, (e) imposing said object beam of light on a test device over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has at least a first state of birefringence or refraction; (f) imposing said object beam of light on said test device over said spatial region within said test device, imposing the object beam on the exterior surface of the semiconductor material to generate a reflected or transmitted object beam reflected from the interior structures of the semiconductor material, or (g) imposing the reflected or transmitted object beam and the reference beam onto a detection device to create a plurality of interference patterns of the reflected or transmitted object beam with the reference beam, (h) wherein said test device has at least a second state of birefringence or refraction; and (i) obtaining, displaying, transmitting, processing, or storing electric digital data resulting from the interference of said object beam of light within said device under test representative of voltages or electromagnetic field states or electromagnetic signals within said region; (j) wherein said first state of birefringence or refraction is at a first voltage potential or electromagnetic field state, and wherein said second state of birefringence or refraction is at a second voltage potential or electromagnetic field state or electromagnetic signal different from said first voltage potential or electromagnetic field state or electromagnetic signal.

4. The method of claim 3, wherein imposing a second wavelength threshold below which photo-refraction will occur or a second electromagnetic radiation of differing wavelength or intensity to bring about at least one of the following; a photo-refractive effect, a birefringence, a free carrier absorption, a photo injected carrier, a thermal emission, a photoluminescence, or an effect thereof.

5. A method of obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials device under test comprising: (a) providing a coherent beam of light from a light source having a first wavelength; (b) splitting the light beam into a pair of beams comprising of a reference beam and an object beam, (c) imposing the object beam on the exterior surface of the semiconductor material to generate a reflected object beam reflected from the interior structures of the semiconductor material, or (k) imposing said object beam on the exterior surface of the semiconductor material to generate a transmitted object beam transmitted through the interior structures or interior surfaces of the semiconductor or anisotropic material, (d) imposing said object beam of light on a test device over a spatial region within said test device greater than said first wavelength, wherein said test device has a first state; (e) imposing said coherent beam of light on said test device over said spatial region within said test device, wherein said test device has a second state; (f) imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns of the reflected or transmitted object beam with the reference beam, (g) obtaining, displaying, transmitting, processing, or storing electric digital data resulting from the interference of said object coherent beam of light within said device under test representative of the voltages or electromagnetic field states or electromagnetic signals within said region; (h) wherein said first state is at a first voltage potential or electromagnetic field state, and wherein said second state is at a second voltage potential or electromagnetic field different from said first voltage potential or electromagnetic field state or electromagnetic signal.

6. The method of claim 5, wherein imposing a second wavelength threshold below which photo-refraction will occur or a second electromagnetic radiation of differing wavelength or intensity to bring about at least one of the following; a photo-refractive effect, a birefringence, a free carrier absorption, a photo injected carrier, a thermal emission, a photoluminescence, or an effect thereof.

7. A method of obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test comprising: (a) providing a beam of light from a light source having a first wavelength; (b) imposing said beam of light on a test device transmitted through or reflected from the interior surfaces or structures over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has at least a first state of birefringence or refraction; (c) imposing said beam of light on said test device over said spatial region within said test device, wherein said test device has at least a second state of birefringence or refraction; and (d) obtaining, displaying, transmitting, processing, or storing electric digital data resulting from the interference of said beam of light transmitted through or reflected from the interior surfaces or structures within said device under test representative of voltages or electromagnetic field states or electromagnetic signals within said region; (e) wherein said first state of birefringence or refraction is at a first voltage potential or electromagnetic field state, and wherein said second state of birefringence or refraction is at a second voltage potential or electromagnetic field state different from said first voltage potential or electromagnetic field state or electromagnetic signal.

8. The method of claim 7, wherein imposing a second wavelength threshold below which photo-refraction will occur or a second electromagnetic radiation of differing wavelength or intensity to bring about at least one of the following; a photo-refractive effect, a birefringence, a free carrier absorption, a photo injected carrier, a thermal emission, a photoluminescence, or an effect thereof.

9. The method of claim 7, wherein at least one of the states of the semiconductor material is an external stress, the external stress being produced by imposing incident radio waves or signals acting upon the semiconductor or anisotropic material, or device.

10. The method of claim 7, wherein at least one of the states of the semiconductor material is an external stress, the external stress being produced by imposing incident r x-rays or an ion-beam acting upon the semiconductor or anisotropic material, or device.

11. The method of claim 7, wherein at least one of the states of the semiconductor material is an external stress, the external stress being produced by incident magnetic fields or electromagnetic signals acting upon the semiconductor or anisotropic material, or device.

12. The method of claim 7, wherein at least one of the states of the semiconductor material is an external stress, the external stress being produced by incident chemical solutions acting upon the semiconductor or anisotropic material, or device.

13. The method of claim 7, wherein at least one or more detector devices records a plurality of interference patterns of a plurality of one or more external stresses which produce a change in the state of the refractive indexes or birefringence states of the semiconductor or anisotropic material, or device.

14. The method of claim 7, wherein at least one of the states of the semiconductor material is a plurality of one or more external stresses are caused being produced by imposing a plurality of electromagnetic radiation stresses of one or more beams of differing wavelengths shorter than the characteristic threshold for the semiconductor material or anisotropic material, or device.

15. The method of claim 7, wherein one or more beams incident to the semiconductor acting upon the semiconductor or anisotropic material, or device, and the interference pattern of each beam are recorded or detected by one or more recording or detector devices.

16. The method of claim 7, wherein at least one of the states of the semiconductor material is an external stress detected by means of triggering the recording or storage device of a plurality of interference patterns in synchrony with the imposition of a plurality of one or more external or internal stresses or electromagnetic signals or external stresses acting upon the semiconductor or anisotropic material, or device.

17. A method of obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test comprising: (a) providing a beam of light from a light source having a first wavelength; (b) in a first beam instance imposing said beam of light on a test device transmitted through or reflected from the interior surfaces or structures over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has a first state of refractive indexes; (c) in a second beam instance imposing said beam of light on said test device over said spatial region within said test device, wherein said test device has a second state of refractive indexes; (d) obtaining, displaying, transmitting, processing, or storing first electric digital data resulting from the interference of said first beam instance of light transmitted through or reflected from the interior surfaces or structures within said device under test representative of voltages or electromagnetic signals within said region and obtaining second electric digital data resulting from the interference of said second beam instance within said device under test representative of the voltages or electromagnetic signals within said region, and comparing by electric digital data processing said first and second electric digital data to determine operating characteristics within said device under test; (e) displaying, transmitting, processing, or storing at least one of said operating characteristics; and (f) wherein said first state of refractive indexes is at a first voltage potential or electromagnetic field state, and wherein said second state of refractive indexes is at a second voltage potential or electromagnetic field state different from said first voltage potential or electromagnetic field state or electromagnetic signal.

18. The method of claim 17, wherein imposing a second wavelength threshold below which photo-refraction will occur or a second electromagnetic radiation of differing wavelength or intensity to bring about at least one of the following; a photo-refractive effect, a birefringence, a free carrier absorption, a photo injected carrier, a thermal emission, a photoluminescence, or an effect thereof.

19. A method of obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials device under test comprising: (a) providing a coherent beam of light from a light source having a first wavelength; (b) imposing said coherent beam of light on a test device transmitted through or reflected from the interior surfaces or structures over a spatial region within said test device greater than said first wavelength, wherein said test device has a first state; (c) imposing said coherent beam of light on said test device over said spatial region within said test device, wherein said test device has a second state; (d) obtaining, displaying, transmitting, processing, or storing electric digital data resulting from the interference of said coherent beam of light transmitted through or reflected from the interior surfaces or structures within said device under test representative of the voltages or electromagnetic field states or electromagnetic signals within said region; (e) wherein said first state is at a first voltage potential or electromagnetic field state, and wherein said second state is at a second voltage potential or electromagnetic field different from said first voltage potential or electromagnetic field state or electromagnetic signal.

20. The method of claim 19, wherein imposing a second wavelength threshold below which photo-refraction will occur or a second electromagnetic radiation of differing wavelength or intensity to bring about at least one of the following; a photo-refractive effect, a birefringence, a free carrier absorption, a photo injected carrier, a thermal emission, a photoluminescence, or an effect thereof.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0015] FIG. 1 illustrates an electro-optic sampling technique using electro-optic light modulator.

[0016] FIG. 2 illustrates a single point detection system.

[0017] FIGS. 3A and 3B illustrate the beams of FIG. 2.

[0018] FIG. 4 illustrates one optical system for non-destructive wave front testing of a device under test.

[0019] FIG. 5 illustrates another optical system for non-destructive wave front testing of a device under test.

DETAILED DESCRIPTION OF THE INVENTION

[0020] The present inventors came to the realization that the single point non-invasive probing technique of semiconductor materials could be enhanced if an area significantly greater than a wavelength of the optical test signal could be transmitted through or reflected off of a semiconductor material. Semiconductor materials generally exhibit electro-optic or photo-refractive effects, which can be made to become birefringent by the application of an electric field, either as such or as embodied in electromagnetic radiation. The present inventors then came to the realization that if an object in a state in which it is not birefringent, but such birefringence can then be brought about by electrical or electromagnetic techniques, the nature of the birefringence so introduced can be studied to determine characteristics of the material. Upon further consideration the present inventors then came to the realization that interferometry techniques can sense a wide region, such as that passing through or reflected off a semiconductor material, which can then be analyzed.

[0021] An interference pattern is created by a coherent light beam being transmitted through or reflected from an object onto a recording medium or otherwise a sensing device, which at the same time the original beam is also directed onto that recording medium or otherwise sensing device as a reference beam. Various characteristics of the resultant transmitted or reflected beam, herein called the object wave, are recorded in the resultant interference pattern between the object wave and the reference beam. That is to say, inasmuch as the intensities of the reference beam and the object wave have been recorded in that interference pattern, the resulting pattern typically includes a set of fringes as a result of the applied voltage. Those characteristics are in part a consequence of the physical structure (i.e., appearance) of the object, hence the interference pattern is related to the structure of the object.

[0022] The present inventors also realized that particular semiconductor materials are generally transparent to light of particular wavelengths so that the light may freely pass through and reflect back though the semiconductor, or otherwise pass through the semiconductor, substantially unaffected when the semiconductor is not stressed, such as by no applied voltage. Likewise, when the semiconductor material, such as an integrated circuit, is stressed by applying a voltage therein by energizing a circuit fabricated therein, the same light will reflect or otherwise pass through the semiconductor material, while being affected by the changes imposed by the applied voltage, such as birefringence, thereby resulting in a different pattern. The stressed and unstressed states can be recorded as different interferometry images. The two interferometry images may then be compared to one another to determine the actual operating characteristics within the semiconductor material. Also, two different stressed states of the semiconductor material may be obtained and thereafter two interferometry images, both from stressed states, may be compared to one another. In addition, by its nature, interferometry techniques record a significant spatial region much larger than a single wavelength simultaneously which is important for characterizing regions of the semiconductor material. For example, the operational characteristics of two different regions may be interrelated which is unobtainable using techniques limited to a single wavelength in spot size. The present inventor's realization that the application of interferometry techniques for the testing of semiconductor devices was only after at least the culmination of all of the aforementioned realizations.

[0023] Of particular interest is the real time characterization of operating characteristics of integrated circuits where such birefringence is introduced by the electro-optic effect, i.e., the imposition of a voltage onto the object (as in the ordinary operation of the integrated circuit) causes birefringence therein. In other words, upon application of an electric field the material, such as GaAs or silicon, introduces an anisotropy and the ordinary complex refractive index n* of the material is decomposed into n.sub.o* and n.sub.e* components. Another technique applicable to appropriate substrates whether or not any operational voltages are also applied thereto, lies in utilization of the photo-refraction effect, wherein electromagnetic radiation of a required intensity is illuminated onto the substrate, and a birefringence or change in birefringence is then brought about. Inasmuch as semiconductor and like materials are generally characterized by a wavelength threshold below which photo-refraction will occur, but above which no photo-refraction takes place, this latter mode of operation employs electromagnetic radiation of differing wavelengths, first to bring about a desired photo-refractive effect, and then secondly to analyze the effect so brought about.

[0024] FIG. 4 shows an interferometry apparatus 200 comprising a laser 202 such as a infrared DFB laser diode or the like, from which is derived a plane wave of linearly polarized light 204. The optical path thus defined may optionally include a selected first neutral density filter 206 that permits convenient adjustment of the laser power level. Likewise, the beam intensity may be varied by the applied voltage level. The beam 204 from the laser 202 (or from the filter 206, if used) may then be passed into a first broad band polarization rotator 208 for purposes of placing the plane of polarization of the laser beam at a desired orientation. Whether or not the polarization rotator 208 is used, the beam may then be passed through one or more first wave plates 210 that may optionally be used to establish a desired degree of ellipticity in the beam. Further, the wave plates may likewise establish with the beam is non-diverging/non-converging, diverging, or converging. In any case, the resultant beam 212 is then separated into a pair of beams 214 and 216 by a beam splitter 218. The beam splitter 218 may alternatively be any device suitable to separate the beam 212 into multiple beams. Likewise, components or beams 214 and 216 are interchangeable.

[0025] The beam 214 may pass through a first lens 220 that will then yield an expanded and/or expanding plane wave 222. The plane wave 222 is then incident on a device under test 230. The plane wave 218, having a wavelength suitable to pass through semiconductor material, passes through either the front side or the back side (or the edge) of the surface of the device under test 230 and reflects from the interior structures within the device under test 230. As a result of beam 222 being reflected back from the device under test 230, the reflected beam will pass back onto beam splitter 218 so as to be passed towards and ultimately impinge upon a recording device 250. The recording device 250 may be any suitable type of sensing device, such as for example, a charge coupled device.

[0026] Similarly, the beam 216 may pass through a second lens 232 that will then yield an expanded and/or expanding plane wave 234. The plane wave 234 is then incident on a reflecting device 236. The plane wave 218, having a wavelength suitable to pass through semiconductor material, reflects from a reflecting device 236. As a result of beam 234 being reflected back from the reflecting device 236, the reflected beam will be reflected by the beam splitter 218 so as to be passed towards and ultimately impinge upon the recording device 250.

[0027] Since both the reference beam (second beam 234) and the object beam (object beam 222) derive from a common, preferably coherent source (laser 202) and are simultaneously, or substantially simultaneously, incident on the recording device 250, the favorable conditions for forming an interference pattern are present. One or more of the lenses may be omitted, as desired. Also, the object and reference beams may be reversed relative to the beam splitter, as desired. It is likewise to be understood that one or more light sources may be used, as desired. Also, it is to be understood that more or more recording devices may be used, as desired. In addition, it is to be understood that the recording device(s) may record the object beam and the reference beam independently of one another, which are thereafter combined in a suitable manner to generate an interference wave front pattern.

[0028] For purposes of the present invention, and in taking an initial interference, the device under test may be any suitable device to which the characteristics are desired, such as for example, a functional integrated circuit on which the surface has been exposed (i.e., potting is not present) but to which no voltages or other external stimuli have been applied, a semiconductor material such as a wafer taken from or existent within a wafer manufacturing line, a semiconductor wafer taken from or existent within a chip manufacturing line at any of various stages of manufacture (deposition, etching, metallization, etc.) or the like, the recording device may be taken to be any suitable material for recording or otherwise sensing an interference image, such as for example, a photographic film, charge coupled device, or thermoplastic plate onto which the initial interference pattern is recorded in the graphic film, charge coupled device, or thermoplastic plate onto which the initial interference is sensed and/or recorded.

[0029] As to the case in which the device under test is a functional but not energized integrated circuit, a first interference may be recorded therefrom using the apparatus as shown in FIG. 4, i.e., the interference pattern is recorded either onto photographic film, charge coupled device, or within a thermoplastic plate. A second interference may then be made of that same to recording device while either being energized with a voltage or current, or illuminated with light of a wavelength shorter than the characteristic threshold wavelength for the material. In the case in which the device under test is a semiconductor wafer, a first interference may similarly be recorded/sensed and then a second interference may be recorded/sensed while illuminating the wafer in the manner just stated. In either case, any birefringence effects brought about either by the electro-optic effect or by the photo-refractive effect will then be recorded/sensed. A comparison of the two interferences, both taken from one or the other instance of the device under test, will isolate such electro-optically or photo-refractively produced birefringence.

[0030] It is preferred to employ a CCD camera as the sole recording device whereby the first and indeed a multiplicity of subsequent interference patterns may be recorded, at rates commensurate with the rates of operation of an integrated circuit itself, i.e., 50 MHZ or more in terms of charge coupled device operation. An additional advantage in using only the CCD camera for recording interference is that the reference interference, i.e., the interference recorded from the device under test (either as an IC or as a semiconductor wafer) at a time that no voltages or birefringence-inducing laser light was applied thereto, will be recorded digitally as well, and comparisons between the reference and subsequent interferences may be made by means other than within the experimental apparatus itself. i.e., by ordinary digital signal processing (DSP).

[0031] For the purpose of processing such a data stream an analyzer connected to the recording device, and then a monitor connecting to analyzer. Inasmuch as the laser source in the present embodiment is preferably a DBF infrared laser diode (e.g., 900 nm-1600 nm, or 1000 nm-1500 nm, or 2000 nm-14,000 nm), the data to be analyzed may be generated by means of triggering the recording of CCD images in synchrony with the imposition of particular voltage data onto the test object, which may be an IC or possibly an entire printed circuit. As noted previously, the Springer patent describes the use of a digital kernel comprising a predetermined test program together with the digital data to be employed by that program, both of which are stored in ROM. The Springer apparatus then uses voltage probes and the like applied to various circuit nodes to test circuit performance in a manual fashion; the present invention, of course, in addition permits an automatic process of testing an entire IC, circuit board or a semiconductor wafer at any desired stage of manufacture.

[0032] During operation a first interference pattern, stressed or unstressed, may be obtained with the fringes around a particular feature of interest identified. With changes in the applied voltage and/or field the location and/or density of the fringes will vary. However, with slight changes in the fields the exact applied field and/or voltage may be difficult at times to determine. The determination may be assisted by understanding the material's optical properties and physical characteristics (e.g., thickness, layout, doping profile, shape, etc.). Accordingly, the reflecting device 236 may include an adjustment mechanism to vary the location and/or angle of the reflecting device 236 with respect to the beam incident thereon. By varying the position of the reflecting device 236 the location of the fringes may be modified, such as to line up with respect to a feature, such as a conductor. Thereafter a second interference pattern, stressed or unstressed, may be obtained with the fringes around a particular feature of interest identified. The change in the fringes between the two states, together with known characteristics of the particular materials within the device under test in the region of interest, may be used to determine the voltage or relative voltage change within the material in the region of interest. Similarly, the change in the wave front fringes between the two states, together with known voltages or relative voltage change, may be used to characterize the particular materials within the device under test in the region of interest. The change in the wave front fringes may be determined, for example, by subtraction, by addition, or any other suitable image comparison operation. It would likewise be noted that many such operations, such as subtraction, are capable of resolving features less than one wavelength in size. In addition, changes in the wave front fringes with known devices, using VLSI or VHDL circuit coordinate maps (or the like) may be used to characterize voltages and voltage changes. This permits for the observation of voltages within individual devices such as transistors or analysis of device registers or individual values of larger structures such as a micro-controller, or characterize fringes within the doped and non-doped conductive, semi-conductive, and non-conductive material (e.g., dielectric material) adjacent conductors, non-conductors, or semi-conductor material, or the like. Also, this technique may be used to study the effects of incident radiation, such as radio waves, x-rays, magnetic fields, chemical solutions upon the materials, etc.

[0033] It will be understood by those of ordinary skill in the art that other arrangements and disposition of the aforesaid components, the descriptions of which are intended to be illustrative only and not limiting, may be made without departing from the spirit and scope of the invention, which must be identified and determined only from the following claims and equivalents thereof.

[0034] Referring to FIG. 5, another alternative design for the optical system is illustrated for introducing an additional spatial shifting feature to the system. In the reference beam path an spatial beam adjustment member 300 is included. The spatial beam adjustment member 300 spatially offsets the reflected beam relative to the incident beam. In addition, the spatial beam adjustment member 300 may likewise be adjustable to any suitable angle. By recording the interference patterns at multiple different angles, for the same object beam, and processing the same as previously described you may obtain parallax information. In essence, this parallax information provides some three-dimensional information with respect to the structure and voltages within the device under test.