Laminated conductors
10062505 ยท 2018-08-28
Assignee
Inventors
Cpc classification
H01B7/0853
ELECTRICITY
H01B13/0026
ELECTRICITY
H01F27/306
ELECTRICITY
International classification
H01F27/30
ELECTRICITY
Abstract
A microfabricated laminated conductor, comprising at least two flat metallic conductors held together parallel by their edges by a first dielectric material anchor, such that there exists a gap of between several nanometers and several micrometers between most of the at least two flat metallic conductors.
Claims
1. A microfabricated laminated conductor, comprising: at least two flat metallic conductors having each at least a surface and a side wall; the side wall of each of the at least two flat metallic conductors being held by a first dielectric material anchor; the first dielectric material anchor holding the at least two flat metallic conductors parallel, such that a gap separates at least most of the surfaces of the at least two flat metallic conductors, wherein: the laminated conductor has a desired operating frequency; each of said least two flat metallic conductors are made of a material having a predetermined skin depth value at said desired operating frequency; each of said least two flat metallic conductors has a thickness that does not exceed 3 times said predetermined skin depth; and said gap is thinner than the thickness of each of said at least two flat metallic conductors.
2. The microfabricated laminated conductor of claim 1, wherein each of the at least two flat metallic conductors have first and second extremities; the first extremities of the at least two flat metallic conductors being electrically connected together and the second extremities of the at least two flat metallic conductors being electrically connected together.
3. The microfabricated laminated conductor of claim 2, wherein the first extremities of the at least two flat metallic conductors are electrically connected to a common conductor.
4. The microfabricated laminated conductor of claim 1, wherein a portion of said first dielectric material anchor is arranged between the surfaces of the at least two flat metallic conductors.
5. The microfabricated laminated conductor of claim 1, wherein the at least two flat metallic conductors comprise Au, Ag or Cu.
6. The microfabricated laminated conductor of claim 1, wherein the surfaces of said at least two flat metallic conductors separated by said gap are covered by a dielectric material coating.
7. The microfabricated laminated conductor of claim 6, wherein said dielectric material coating comprises at least BCB or Al2O3 or chemical vapor deposited poly(p-xylylene) polymers.
8. The microfabricated laminated conductor of claim 1, wherein said first dielectric material anchor holds one side wall of each of said at least two flat metallic conductors.
9. The microfabricated laminated conductor of claim 8, comprising a second dielectric material anchor that holds another side wall of each of said at least two flat metallic conductors.
10. A planar inductor comprising: a substrate; a microfabricated laminated conductor according to claim 1 attached to the substrate and forming at least one turn of a spiral having an inner end and an outer end; the inner end of the spiral being coupled to a conductive line attached to the substrate; the microfabricated laminated conductor comprising at least an inner portion running from the inner end of the spiral to a vicinity of said conductive line; and the microfabricated laminated conductor comprising at least an outer portion running from the outer end of the spiral to a vicinity of said conductive line; a coupling portion comprising a first conductive bridge locater over, and isolated from, said conductive line, the coupling portion coupling the inner portion of the conductor to the outer portion of the conductor.
11. The planar inductor of claim 10, wherein said coupling portion further comprises an additional portion of the laminated conductor, forming one loop of said spiral and a second conductive bridge located over, and isolated from, said conductive line; said first conductive bridge coupling the outer portion of the laminated conductor to the additional portion of the laminated conductor; and, said second conductive bridge coupling the additional portion of the laminated conductor to the inner portion of the laminated conductor.
12. An RF circuit, comprising: a planar inductor according to claim 10; a first waveguide coupled to said outer end of the spiral; and a second waveguide coupled to said conductive line.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The invention(s) may be better understood by referring to the following figures. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. In the figures, like reference numerals designate corresponding parts throughout the different views.
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DETAILED DESCRIPTION
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(15) According to an embodiment of this presentation, each of the two or more flat metallic conductors 12a, 12b has a thickness of between several nanometers and several micrometers, and can comprise Au, Ag or Cu (alone or in combination), as well as any metal as long as it satisfies the conditions of electroplating, and that the sacrificial layer can be selectively etched away for said metal. It is noted that even though the flat conductors 12a, 12b are shown as planar in
(16) According to an embodiment of this presentation, the first dielectric material anchor 16 holds at least a portion of one edge of each of said at least two flat conductors 12a, 12b. As detailed hereafter, at least a second dielectric material anchor can hold another portion of the same edge of conductors 12a, 12b or at least a portion of another edge of flat conductors 12a, 12b. According to an embodiment of this presentation the surfaces of said at least two flat metallic conductors 12a, 12b separated by said gap 18 can be covered by a dielectric material coating, which may comprise parylene, BCB or Al2O3 such as ALD-deposited Al2O3, or chemical vapor deposited poly(p-xylylene) polymers.
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(22) According to an embodiment of this presentation, each anchor 16 can have a portion that overlaps the top surface of a top flat conductor 12.
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(24) As illustrated in
(25) According to an embodiment of this presentation, flat conductor 12a can be made by electrodeposition. According to an embodiment of this presentation, the sacrificial material can be nickel. The layer 44 of sacrificial material can be deposited through electroplating. Nickel can be selected for laminated gold conductors 12, but generally the sacrificial conductive material should feature: 1) electroplating compatibility with the selected conductive material, 2) be very conductive; this is a requirement to sequentially electroplate a large numbers of laminations, 3) ability to be selectively etched away from the conductive material without degrading it; 4) feature low stress and low plating roughness. For laminated gold conductors, nickel satisfies all the requirements to be used as a sacrificial conductive material. According to an embodiment of this presentation, the thickness of the sacrificial material layer 44 is preferentially smaller than the thickness of the conductor material layer 12.
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(27) Preferably, the material of metallic membrane 38 provides good adhesion to the substrate 32, good adhesion to the photoresist used as a plating mold 40 for the laminated conductors, and compatibility with the metals of conductors 12 (12a, 12b, etc. . . . ). For example, in the case of laminated gold conductors 12 on a semiconductor wafer, one would preferentially select a titanium/gold membrane 38, with thicknesses of 200 A and 1000 A, respectively. In the case of laminated copper conductors 12, one would preferentially select a titanium/copper/titanium membrane 38 with thickness of 200 A, 1000 A and 200 A, respectively. For the purpose of this presentation, we will consider the fabrication of laminated gold conductors 12, but experts in the field will acknowledge the potential for fabrication of laminated conductors 12 with a variety of metals.
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(29) As illustrated in
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(32) According to an embodiment of this presentation, the flat metallic conductors 12 comprise Au, AG or Cu and the sacrificial layer comprises Ni.
(33) According to an embodiment of this presentation, the method further comprises depositing a dielectric coating 36 as shown in
(34) Test structures were microfabricated; which consisted of four layers of electroplated gold as the conductive material layers (1.5 m thickness per layer) and three layers of nickel (0.75 m thickness per layer) as the sacrificial conductive material layers. The anchor structure consisted of cured photoresist. The nickel was chemically etched away using the Transene Nickel etchant TFG solution at 25 C for 30 minutes. The test structure demonstrated that the selective etching of the sacrificial layer did not degrade the conductive material layers (i.e., gold layers).
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(36) Optionally, the method further comprises depositing (72) a dielectric coating on the two flat metallic conductors after removing the remainder of said sacrificial layer.
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(38) According to an embodiment of this presentation, planar inductor 80 comprises: a substrate 82; a microfabricated laminated conductor 84 such as described above, for example in relation with
(39) According to an embodiment of this presentation, the microfabricated laminated conductor 84 comprises at least an inner portion 92 running from the inner end 86 of the spiral to a vicinity 94 of said conductive line 90; and the microfabricated laminated conductor 84 comprises at least an outer portion 96 running from the outer end 88 of the spiral to a vicinity 98 of said conductive line 90. According to an embodiment of this presentation, outer end 88 of the spiral can be connected to a conductive conductor, such as a metallic plate or strip 91, electrically connected to the extremities of the conductors (not detailed in
(40) According to an embodiment of this presentation, the planar inductor 80 further comprises a coupling portion 100 comprising a first conductive bridge 102 that is located over, and isolated from, said conductive line 90, the coupling portion 100 coupling the inner portion 92 of the laminated conductor 84 to the outer portion 96 of the laminated conductor 84.
(41) According to an embodiment of this presentation, the coupling portion 100 further comprises: an additional portion 104 of the laminated conductor 84, forming one loop of said spiral; and a second conductive bridge 106 located over, and isolated from, said conductive line 90; the first conductive bridge 102 coupling the outer portion 96 of the laminated conductor 84 to the additional portion 104 of the laminated conductor; and the second conductive bridge 106 coupling the additional portion 104 of the laminated conductor 84 to the inner portion 92 of the laminated conductor 84. It is to be understood that the coupling portion 100 is illustrated with one additional portion of the laminated conductor forming one loop of the spiral and one second conductive bridge, but that the coupling portion 100 can according to an embodiment of this presentation comprise a plurality of additional portions of the laminated conductor 84 forming each one loop of the spiral, and a corresponding plurality of second conductive bridges.
(42) According to an embodiment of this presentation, each portion 92, 96, 104 of the laminated conductor 84 comprises a plurality of flat conductors 12 (as shown on
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(47) According to an embodiment of this presentation, the method further comprises forming (116) a photoresist layer covering at least the second waveguide in the radial cut in the spiral without covering the top portions of the conductive stacks, and forming (118) on the photoresist layer a conductive bridge connecting the top portion of the conductive stacks above the radial cut in the spiral; removing (120) the photoresist layer; etching (122) a peripheral portion of the sacrificial layer of the conductive stacks, thus forming a gap between the edges of the first and second flat conductors of the conductive stacks; forming (124) a dielectric material anchor on at least one side of said first and second flat conductors of the conductive stacks such that a portion of the dielectric material anchor is arranged in said gap between said first and second flat conductors; and removing (126) the remainder of said sacrificial layer of the conductive stacks.
(48) According to an embodiment of this presentation, the bridge can be formed by electroplating on a sputtered layer. According to an embodiment of this presentation, the bridge can have a thickness of one micron.
(49) According to an embodiment of this presentation, in the method above, said forming (112) said sacrificial mold exposing the conductive pad layer along at least two recesses in the shape of one turn of a spiral interrupted by a radial cut comprises forming: a first recess developing from an inner end of the spiral to a first side of said radial cut, at a first distance from the center of the spiral; a second recess developing from a second side of the radial cut, at a second distance from the center of the spiral, to an outer end of the spiral; and at least a third recess developing along one loop of the spiral between the second side of said radial cut, at said first distance from the center of the spiral and the first side of said radial cut, at said second distance from the center of the spiral; and said forming (118) said conductive bridge above said radial cut comprises forming a first conductive bridge above the radial cut at said first distance from the center of the spiral and forming a second conductive bridge above the radial cut at said second distance from the center of the spiral.
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(51) It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents. Reference to an element in the singular is not intended to mean one and only one unless explicitly so stated, but rather means one or more. Moreover, no element, component, nor method step in this presentation is intended to be dedicated to the public regardless of whether the element, component, or method step is explicitly recited in the following claims. No claim element herein is to be construed under the provisions of 35 U.S.C. Sec. 112, sixth paragraph, unless the element is expressly recited using the phrase means for . . . .
(52) It should be understood that the figures illustrated in the attachments, which highlight the functionality and advantages of the present invention, are presented for example purposes only.
(53) Furthermore, the purpose of the foregoing Abstract is to enable the U.S. Patent and Trademark Office and the public generally, and especially the scientists, engineers and practitioners in the art who are not familiar with patent or legal terms or phraseology, to determine quickly from a cursory inspection the nature and essence of the technical disclosure of this presentation. The Abstract is not intended to be limiting as to the scope of the present invention in any way. It is also to be understood that the steps and processes recited in the claims need not be performed in the order presented.
(54) Also, it is noted that the embodiments may be described as a process that is depicted as a flowchart, a flow diagram, a structure diagram, or a block diagram. Although a flowchart may describe the operations as a sequential process, many of the operations can be performed in parallel or concurrently. In addition, the order of the operations may be re-arranged. A process is terminated when its operations are completed. A process may correspond to a method, a function, a procedure, a subroutine, a subprogram, etc. When a process corresponds to a function, its termination corresponds to a return of the function to the calling function or the main function.
(55) The various features of the invention described herein can be implemented in different systems without departing from the invention. It should be noted that the foregoing embodiments are merely examples and are not to be construed as limiting the invention. The description of the embodiments is intended to be illustrative, and not to limit the scope of the claims. As such, the present teachings can be readily applied to other types of apparatuses and many alternatives, modifications, and variations will be apparent to those skilled in the art.
(56) For example, embodiments comprising a planar inductor have been detailed but this presentation can also be used to make an antenna or a transmission line or an interconnect, for example.
(57) Also, embodiments of this presentation relate to a method for microfabricating laminated metallic conductors, the method comprising: deposition of a seed layer on a substrate; coating of photodefinable resist and patterning; deposition of at least a first layer of a conductive material; deposition of at least a first layer of a sacrificial conductive material, which must be low resistivity and compatible with selective etching of the conductive material; deposition of at least a second layer of a conductive material; partial and selective removal of the sacrificial conductive material; removal of the photodefinable resist and seed layer; fabrication of an anchor structure formed by a polymeric material; complete removal of the sacrificial conductive material, thereby leaving the at least first layer of conductive material and a second layer of conductive material mechanically supported by the anchor structure; optional coating of interlamination air gaps with a dielectric.
(58) According to embodiments of this presentation, the metallic interconnects can comprise Au, or Ag, or Cu, as well as any metal as long as it satisfies the conditions of electroplating, and that the sacrificial layer can be selectively etched away for said metal.
(59) A method according to an embodiment of this presentation comprises: deposition of a membrane on top of a substrate, the membrane being Ti/Au (200 A/3000 A) or Ti/Cu (200 A/3000 A) or Ti/Ag (200 A/3000 A); deposition and patterning of a photodefinable resin mold for pad and underpass fabrication; electrodeposition of a conductive material (Cu, Ag, or Au) to form coplanar waveguide launchers and inductor underpass for inductor to pad interconnections, the plated metal being no less than 1 micron; deposition and patterning a photodefinable resist mold on top of the launchers and inductor underpass to form the laminated conductors; deposition/electrodeposition of at least a first layer of a conductive material, at least a first layer of a sacrificial conductive material, and at least a second layer of a conductive material through the photodefinable resist mold; removal of the photoresist mold; removal of the membrane; partial removal of the sacrificial conductive material; deposition of a membrane; deposition and patterning of a photodefinable resin mold to form interconnects; electrodeposition of a conductive material (Cu, Ag, or Au) to form interconnects, the plated metal being no less than 1 micron; removal of the photoresist mold; removal of the membrane; fabrication of an anchor structure formed by a polymeric material; complete removal of the sacrificial conductive material, thereby leaving the at least a first layer of conductive material and a second layer of conductive material mechanically supported by the anchor structure; optional coating of interlamination air gaps with a dielectric.
(60) An embodiment of this presentation comprises a laminated metallic conductor having: at least two layers of metallic conductor separated by a dielectric and anchored by non-removable photodefinable resin formed on a substrate.
(61) An embodiment of this presentation comprises a planar inductor with laminated conductors comprising: metallic coplanar waveguide pads and an underpass to connect the inductor trace to inductor pads, and at least two layers of metallic conductors separated by a dielectric and anchored on a substrate, and metallic interconnects to connect the pads to the laminated conductors.
(62) The embodiments described above preferably comprise flat metallic conductors, but other embodiments of this presentations can comprise other electricity conducting materials, such as semiconductors or light conducting materials, as long as the sacrificial layer can be selectively etched away for said materials.