SUBSTRATE TREATMENT APPARATUS WITH FLEX-LL FUNCTION, AND SUBSTRATE TRANSFER METHOD
20220359241 · 2022-11-10
Inventors
Cpc classification
H01L21/67184
ELECTRICITY
G05B19/41815
PHYSICS
H01L21/67201
ELECTRICITY
International classification
H01L21/67
ELECTRICITY
G05B19/418
PHYSICS
Abstract
Examples of a substrate treatment apparatus include a plurality of load ports, a front-end module adjacent to the plurality of load ports, a plurality of load lock chambers adjacent to the front-end module, the plurality of load lock chambers include a plurality of wafer housing slots, a wafer handling chamber adjacent to the plurality of load lock chambers, a first wafer transfer device in the front-end module, a second wafer transfer device in the wafer handling chamber, and a controller including a processor and a memory configured to cause the processor to execute a program stored in the memory, or including a dedicated circuitry, to issue a command to a wafer moving device to move a wafer between the plurality of load lock chambers when predetermined wafer transfer conditions are satisfied.
Claims
1. A substrate treatment apparatus comprising: a plurality of load ports; a front-end module adjacent to the plurality of load ports; a first load lock chamber adjacent to the front-end module, the first load lock chamber having a plurality of wafer housing slots; a second load lock chamber adjacent to the front-end module, the second load lock chamber having a plurality of wafer housing slots; a wafer handling chamber adjacent to the first load lock chamber and the second load lock chamber; a first wafer transfer device in the front-end module; a second wafer transfer device in the wafer handling chamber; and a controller including a processor and a memory configured to cause the processor to execute a program stored in the memory, or including a dedicated circuitry, to issue a command to a wafer moving device to move a wafer between the first load lock chamber and the second load lock chamber when predetermined wafer transfer conditions are satisfied.
2. The substrate treatment apparatus according to claim 1, wherein the wafer transfer conditions include that there is a wafer of which treatment is not completed in the first load lock chamber and the second load lock chamber, and there is a wafer to be transferred to the first load lock chamber or the second load lock chamber in any one load port of the plurality of load ports; and the command causes the wafer moving device to operate so as to attain a state in which there is no wafer in any one of the first load lock chamber and the second load lock chamber.
3. The substrate treatment apparatus according claim 1, wherein the plurality of load ports include a first load port, a second load port and a third load port; the wafer transfer conditions include that there is a wafer which has been transferred from the first load port and of which treatment is not completed, in the first load lock chamber, there is a wafer which has been transferred from the second load port and of which the treatment is not completed, in the second load lock chamber, and there is a wafer to be transferred to the first load lock chamber or the second load lock chamber, in the third load port; and the command causes the wafer moving device to operate so as to attain a state in which there is no wafer in any one of the first load lock chamber and the second load lock chamber.
4. The substrate treatment apparatus according to claim 2, wherein when the program is executed by the processor, or when the processing of the dedicated circuitry is executed, the controller issues the command to the first wafer transfer device to move the wafer from one of the plurality of load ports to a load lock chamber containing no wafer, the load lock chamber containing no wafer being one of the first load lock chamber and the second load lock chamber.
5. The substrate treatment apparatus according to claim 2, wherein the command causes the wafer moving device to operate so as to move wafers housed in the first load lock chamber or wafers housed in the second load lock chamber, the moved wafers having a smaller number than the other wafers.
6. The substrate treatment apparatus according to claim 1, wherein the wafer transfer conditions include that a first wafer of which treatment has been completed and a second wafer of which the treatment is not completed are mixed in the first load lock chamber or the second load lock chamber; and the command causes the wafer moving device to operate so as to attain a state in which only the first wafer exists in any one of the first load lock chamber and the second load lock chamber.
7. The substrate treatment apparatus according to claim 1, wherein the plurality of load ports include a first load port and a second load port; the wafer transfer conditions include that first wafers which have been transferred from the first load port and of which treatment has been completed, and second wafers which have been transferred from the second load port and of which the treatment is not completed are mixed in the first load lock chamber or the second load lock chamber; and the command causes the wafer moving device to operate so as to attain a state in which only the first wafers exist in any one of the first load lock chamber and the second load lock chamber.
8. The substrate treatment apparatus according to claim 7, wherein the command causes the wafer moving device to operate so as to move the first wafers or the second wafers, the moved wafers having a smaller number than the other wafers.
9. The substrate treatment apparatus according to claim 1, wherein the wafer transfer conditions include that a process job which designates a transfer path of the wafer permits use of the first load lock chamber and the second load lock chamber.
10. The substrate treatment apparatus according to claim 1, wherein the wafer moving device is the second wafer transfer device.
11. The substrate treatment apparatus according to claim 1, wherein the wafer moving device comprises: an inter-load lock chamber configured to communicate with the first load lock chamber and the second load lock chamber via a gate valve; and an inter-load lock wafer transfer device provided in the inter-load lock chamber, in the first load lock chamber or in the second load lock chamber.
12. The substrate treatment apparatus according to claim 1, further comprising a gate valve existing between the first load lock chamber and the second load lock chamber, the first load lock chamber and the second load lock chamber being adjacent to each other, wherein the wafer moving device is a robot, an arm or a belt conveyor which moves the wafer from one of the first load lock chamber and the second load lock chamber to the other, when the gate valve is in a open state.
13. The substrate treatment apparatus according to claim 1, further comprising a plurality of reactor chambers in contact with the wafer handling chamber.
14. A substrate transfer method comprising: moving a wafer from a plurality of load ports to at least one of a first load lock chamber and a second load lock chamber; and attaining a state in which there is no wafer in the first load lock chamber or the second load lock chamber, by moving the wafer from one of the first load lock chamber and the second load lock chamber to the other, or attaining a state in which there is only a treated wafer in the first load lock chamber or the second load lock chamber by moving the wafer from one of the first load lock chamber and the second load lock chamber to the other.
15. The substrate transfer method according to claim 14, wherein the plurality of load ports include a first load port associated with first wafers, a second load port associated with second wafers, and a third load port associated with third wafers; and when the wafer is moved from one of the first load lock chamber and the second load lock chamber to the other, all of the first wafers, all of the second wafers, or all of the third wafers are moved.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0026] A substrate treatment apparatus and a substrate transfer method will be described with reference to the drawings. The same or corresponding constituent components are designated by the same reference numerals, and repeated description thereof is omitted in some cases.
EMBODIMENT
[0027]
[0028] A first load lock chamber (first LLC) 20 and a second load lock chamber (second LLC) 30 are provided adjacent to the front-end module 18. The first LLC 20 and the second LLC 30 are connected to a vacuum device, and can be set to atmospheric pressure or to a vacuum. According to one example, the first LLC 20 and the second LLC 30 are two independent chambers, and the movement of gas from one to the other is prevented. For information, in
[0029] A gate valve 22 is provided between the first LLC 20 and the front-end module (FEM) 18. A gate valve 32 is provided between the second LLC 30 and the FEM 18.
[0030] A wafer handling chamber (WHC) 40 is provided adjacent to the first LLC 20 and the second LLC 30. There is a second wafer transfer device 41 in the WHC 40. According to one example, the second wafer transfer device 4 is a robot for transferring the wafer. A gate valve 24 is provided between the first LLC 20 and the WHC 40. A gate valve 34 is provided between the second LLC 30 and the WHC 40. Reactor chambers 42, 44, 46 and 48 are adjacent to the WHC 40 via gate valves 42a, 44a, 46a and 48a, respectively.
[0031] The WHC 40 is in contact with the WHC 60 via a pass-through chamber 50. According to one example, the pass-through chamber 50 includes an upper pass-through chamber having a gate valve on the WHC 60 side, and a lower pass-through chamber having a gate valve on the WHC 40 side. In other words, in the upper pass-through chamber and also in the lower pass-through chamber, there is one gate valve between the WHC 40 and the WHC 60. Thereby, the pressures of the WHC 40 and the WHC 60 can be made different from each other.
[0032] Reactor chambers 64, 66, 68 and 70 are adjacent to the WHC 60 via gate valves 64a, 66a, 68a and 70a, respectively. According to one example, the reactor chamber 42 44, 46 and 48 and the reactor chambers 64, 66, 68 and 70 can be provided as apparatuses for forming an epitaxial growth film on the wafer by single-wafer treatment. According to one example, each of the second wafer transfer device 41 and the third wafer transfer device 62 has perpendicularly arranged two arms. According to another example, the number of arms can be any number.
[0033] The transferring of the wafer is controlled by a controller 28. According to one example, the controller 28 controls the first wafer transfer device 19, the second wafer transfer device 41, the third wafer transfer device 62, and each of the gate valves described above, and makes the wafer transfer devices transfer the wafer along a transfer path of the wafer, which is designated by the control job.
[0034] The substrate treatment apparatus 10 of
[0035]
[0036] As the second LLC 30, the same configuration as that of the first LLC 20 can be adopted. In this example, each of the first LLC 20 and the second LLC 30 has a plurality of wafer housing slots.
[0037] By the control of the controller 28, the transferring of the wafer is executed, for example, as follows.
(1) Wafer transfer from any one of the load ports 12, 14 and 16 to the first LLC 20 or the second LLC 30, by the first wafer transfer device 19.
(2) Wafer transfer from the first LLC 20 or the second LLC 30 to any one of the reactor chambers 42, 44, 46 and 48 or to the pass-through chamber 50, by the second wafer transfer device 41.
(3) Wafer transfer from the pass-through chamber 50 to any one of the reactor chambers 64, 66, 68 and 70, by a third wafer transfer device 62.
(4) Wafer transfer from any one of the reactor chambers 64, 66, 68 and 70 to the pass-through chamber 50, by a third wafer transfer device 62.
(5) Wafer transfer from any one of the reactor chambers 42, 44, 46 and 48, or the pass-through chamber 50, to the first LLC 20 or the second LLC 30, by the second wafer transfer device 41.
(6) Wafer transfer from the first LLC 20 or the second LLC 30 to any one of the load ports 12, 14 and 16, by the first wafer transfer device 19.
[0038] According to one example, the wafer is transferred along a wafer transfer path which has been designated by a control job. In addition to the above-described wafer transfer, this substrate treatment apparatus has a function called FLEX-LL. The FLEX-LL is a function of enhancing the throughput through the movement of wafers between the load lock chambers.
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Example 1
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[0042] In the step S5, the controller 28 issues a command to a “wafer moving device”, and causes the “wafer moving device” to operate so as to attain a state in which there is no wafer in any one of the first LLC 20 and the second LLC 30.
[0043] In
[0044] According to an example, in the step S5, it is possible to move the wafers housed in the first LLC 20 or the wafers housed in the second LLC 30, the moved wafers having a smaller number than the other wafers. In the example of
[0045] Next, the process proceeds to step S6. In the step S6, the controller 28 issues a command to the first wafer transfer device 19, and makes the first wafer transfer device move the wafer from any one of the plurality of load ports, to a load lock chamber containing no wafer which is one of the first LLC 20 and the second LLC 30. In the example of
[0046] As is illustrated in
[0047] The examples of
[0050] In other words, in the examples of
Example 2
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[0053] In the step S8, the controller issues a command to the wafer moving device, and causes the wafer moving device to operate so as to attain a state in which there are only the wafers A′ in any one of the first LLC 20 and the second LLC 30. In order to obtain the state in which there are only the wafers A′ in the first LLC 20, nine wafers B in the first LLC 20 are moved to the second LLC 30 by the wafer moving device. The wafer moving device is the second wafer transfer device 41 or the dedicated wafer transfer device, as described above. In
[0054] Next, the process proceeds to step S9. In the step S9, the wafers A′ which are treated wafers are returned to the load port. In
[0055] Next, the process proceeds to step S10. In the step S10, a FOUP housing the wafers A′ is retracted from the load port 12. In this way, by using the FLEX-LL, the treated wafer can be moved from the LLC to the load port at an early stage, accordingly the number of empty slots in the LL can be increased, and the transfer of the treated wafer can be accelerated. It enables charging of a new wafer from the load port into the LLC to move the treated wafer from the LLC to the load port in an early stage.
[0056] The examples of
[0060] Specifically, in the example of
Example 3
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[0062] Firstly, in step S7, it is checked whether the first wafer of which the treatment has been completed and the second wafer of which the treatment is not completed are mixed in the first LLC 20 or the second LLC 30. In
[0063] Next, in the step S8, nine wafers B are moved to the second LLC 30. In
[0064] Next, in step S9, nine wafers A′ are moved from the first LLC 20 to the load port 12. In
[0065] Next, in step S10, the FOUP is carried out from the load port 12. In this way, the wafers A′ can be moved from the LLC to the load port at an early stage by the processing of the FLEX-LL.
[0066] It is also acceptable to perform the wafer transfer between LLCs in a mode different from the first to third examples and realize an improvement of the throughput. Specifically, the function of the FLEX-LL is not limited to the specific examples described above, and can also have another aspect. All embodiments can be adopted which enable improvement of the throughput, for example, by moving the wafer from the plurality of load ports to at least one of the first LLC and the second LLC; and by attaining a state in which there is no wafer in the first LLC or the second LLC, or by attaining a state in which there is only a treated wafer in the first LLC or the second LLC, by moving the wafer from one of the first LLC and the second LLC to the other.
[0067] According to one example, it is possible to add the following restriction condition to the wafer transfer conditions illustrated in each of the above-described examples.
[0068] Restriction Condition 1:
[0069] A process job which designates a transfer path of the wafer shall permit the use of both of the first LLC and the second LLC.
[0070] More specifically, a control job which is being executed or a control job which serves as a trigger for the execution of the FlexLL can add such a restriction condition that both of the LLCs need to be available. In other words, in the case where a control job with which a user intentionally designates any one of the LLC 1 and the LLC 2 is being executed or is scheduled to be executed, such designation may not be achieved due to the function of the FLEX-LL, and accordingly it is determined that the wafer transfer conditions of the FLEX-LL are not satisfied.
[0071] According to another example, the following restriction condition can be added.
[0072] Restriction Condition 2:
[0073] One control job shall not transfer wafers belonging to a plurality of load ports.
[0074] Specifically, when the FLEX-LL is used in the case where the substrate treatment apparatus handles a control job of simultaneously transferring a wafer taken in or out from a certain load port and a wafer taken in or out from another load port, a logic (computation) for the transfer becomes complicated, and accordingly the above-described restriction condition is added.
[0075] According to another example, the following restriction condition can be added.
[0076] Restriction Condition 3:
[0077] Wafers taken in and out from one load port do not exist both in the first LLC and the second LLC.
[0078] For example, when the wafers A exist in both of the first LLC and the second LLC, the logic of the FLEX-LL becomes complicated, and accordingly, in such a case, the FLEX-LL can be not executed. As a modified example of the restriction condition 3, when wafers taken in and out from one load port are scheduled to be transferred to the first LLC and the second LLC by the control job, it is acceptable that the wafers taken in and out from one load port proceed only to the first LLC or the second LLC by the FLEX-LL.
[0079] According to another example, the following restriction condition can be added.
[0080] Restriction Condition 4:
[0081] There is not such a dedicated condition that one LLC can accept only wafers taken in and out from one load port.
[0082] For example, in the case where only the wafers A can be loaded into one LLC, it is not preferable to move the wafers A to another LLC; and accordingly, this restriction condition can be added.
[0083] By the way, when wafers are moved between the LLCs, if the sum of the number of wafers to be moved in a source LLC and the number of wafers in a destination LLC is greater than 25, the movement of wafers between the LLCs cannot be completed. Then, it is acceptable that the controller executes the movement of the wafer between the LLCs, after having confirmed that such a problem does not occur.
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[0087] Thus, each function described above is implemented by the execution of a program stored in a memory by a processor, or by the processing of the dedicated circuitry.
[0088] In the above-described example, the second wafer transfer device 41 is structured so as to move the wafer from one of the first LLC 20 and the second LLC 30 to the other. However, it is possible to move the wafer between the LLCs with the use of a dedicated device.
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[0092] As illustrated in