MEMS structure with improved shielding and method

Abstract

A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Claims

1. A method for fabricating an integrated MEMS-CMOS device comprising: providing a substrate member having a surface region; forming a CMOS IC layer overlying the surface region, the CMOS IC layer having at least one CMOS device; depositing a bottom isolation layer overlying the CMOS IC layer; depositing a shielding layer overlying a portion of the bottom isolation layer, wherein a top surface of the shielding layer is coplanar to a top surface of the bottom isolation layer; depositing a top isolation layer overlying a portion of the bottom isolation layer, wherein the bottom isolation layer comprises an isolation region between the top isolation layer and the shielding layer; forming a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer; and etching the MEMS layer to form at least one MEMS structure having at least one movable structure and at least one anchored structure, wherein the at least one anchored structure is coupled to a portion of the top isolation layer, wherein the at least one movable structure is formed overlying the shielding layer; wherein the shielding layer is grounded to short plasma to the shielding layer to provide protection from charging during etching the MEMS layer.

2. The method of claim 1 wherein the shielding layer is formed within a portion of the bottom isolation layer.

3. The method of claim 1 wherein the shielding layer comprises a single-sided partial shielding layer underlying at least a portion of the movable structure.

4. The method of claim 1 wherein the shielding layer comprises a full shielding layer underlying at least a portion of the movable structure and at least a portion of the anchored structure.

5. The method of claim 4 further comprising etching the top isolation layer to form the isolation region between the top isolation layer and the bottom isolation layer.

6. The method of claim 1 wherein the shielding layer comprises a polysilicon material.

7. The method of claim 1 wherein the shielding layer comprises an aluminum material.

8. The method of claim 1 wherein the at least one MEMS structure comprises an accelerometer, a gyrometer, a magnetometer, or a pressure sensor.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In order to more fully understand the present invention, reference is made to the accompanying drawings. Understanding that these drawings are not to be considered limitations in the scope of the invention, the presently described embodiments and the presently understood best mode of the invention are described with additional detail through use of the accompanying drawings in which:

(2) FIG. 1 is a diagram illustrating a side view of a conventional embodiment of a MEMS structure without shielding.

(3) FIG. 2 is a diagram illustrating a side view of a MEMS structure with full shielding according to an embodiment of the present invention.

(4) FIG. 3 is a simplified diagram illustrating a side view of a MEMS structure with single-sided partial shielding according to an embodiment of the present invention.

(5) FIG. 4 is a simplified diagram illustrating a side view of a MEMS structure with full shielding and retrograde isolation according to an embodiment of the present invention.

(6) FIG. 5 is a simplified flow diagram illustrating a method for fabricating a MEMS structure with full shielding and retrograde isolation according to an embodiment of the present invention.

(7) FIG. 6 is a simplified diagram illustrating a cross-sectional view of an integrated MEMS-CMOS device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

(8) The present invention is directed to MEMS (Micro-Electro-Mechanical-Systems). More specifically, embodiments of the invention provide methods and structure for improving integrated MEMS devices, including inertial sensors and the like. Merely by way of example, the MEMS device can include at least an accelerometer, a gyroscope, a magnetic sensor, a pressure sensor, a microphone, a humidity sensor, a temperature sensor, a chemical sensor, a biosensor, an inertial sensor, and others. But it will be recognized that the invention has a much broader range of applicability.

(9) FIGS. 1-4 use the numerals listed in the following table:

(10) TABLE-US-00001 1 Movable structure layer (e.g. Si, poly-Si) 2 Anchored structure layer (e.g. Si, poly-Si) 3 Bottom isolation layer (e.g. SiO2, Si3N4) 4 Top isolation layer (e.g. SiO2, Si3N4) 5 Bottom edges of structure layer 6 Sidewalls of top isolation layer 7 Shielding layer (e.g. Al, poly-Si) 8 Edge of the shielding layer 3a Exposed bottom isolation layer 3b Isolative path of Embodiment 1 3c Isolative path of Embodiment 2 7a Exposed shielding layer

(11) FIG. 1 is a diagram illustrating a side view of a conventional embodiment of a MEMS structure without shielding. As shown, a MEMS structure 100 having a movable structure layer 1 and an anchored structure layer 2 disposed overlying a bottom isolation layer 3. The anchored structure layer 2 is coupled to top isolation layer 4, which is also coupled to the bottom isolation layer 3. For reference, the exposed portion of the bottom isolation layer 3a, the bottom edges 5 of the structure layers 1 and 2, and the side walls 6 of the top isolation layer 4 are shown. This configuration results in structural damage at the bottom edges 5 due to back-etching induced by accumulated charging at the exposed bottom isolation layer 3a during an over-etching stage of the structure layers 1 and 2.

(12) FIG. 2 is a diagram illustrating a side view of a MEMS structure with full shielding according to an embodiment of the present invention. Compared to MEMS structure 100, MEMS structure 200 additionally has a shielding layer 7, which is grounded, to prevent the charging at the exposed bottom layer. However, this configuration results in a leakage path at the sidewalls 6 of the top isolation layer 4 between the anchored structure layer 2 and the shielding layer 7. The leakage path is due to the back-sputtering induced by plasma bombardments at the exposed shielding layer 7a during an over-etching stage of the structure layers 1 and 2, which deposits conductive shielding materials at adjacent sidewalls 6 of the top isolation layer 4 and bottoms of the structure layers 1 and 2. As an example, some residue of a plasma etching process can splash up on sidewalls 6 and can intermittently cause a short in the region between structure layer 2 and the shielding layer 7.

(13) FIG. 3 is a simplified diagram illustrating a side view of a MEMS structure with single-sided partial shielding according to an embodiment of the present invention. In this embodiment, the shielding layer 7 is configured such that it does not reach the sidewall 6 of the top isolation layer. This configuration provides protection from charging and provides an isolative path (3b) between the edges 8 of the shielding 7 and the sidewalls 6 of the top isolation layer 4. This isolation path provides isolation without back-sputtered materials. As an example, plasma will still short to the shielding 7 and region 3b still be protected from plasma damage. By reducing the shielding layer 7, no residue will be splashed onto sidewall 6.

(14) FIG. 4 is a simplified diagram illustrating a side view of a MEMS structure with full shielding and retrograde isolation according to an embodiment of the present invention. This embodiment uses shielding layer 7 similar to that shown in FIG. 2, however, the top isolation layer is cut back, through an etching process or the like. As an example, plasma residue and/or other materials will not stick to the sidewall 6, and the MEMS device will not intermittently short out.

(15) FIG. 5 is a simplified flow diagram illustrating a method for fabricating a MEMS structure with full shielding and retrograde isolation according to an embodiment of the present invention. Referring to FIG. 5, an example of a manufacturing process 500 can be briefly described below: 1. Start; (step 502) 2. Provide a substrate member having a surface region; (step 504) 3. Form a CMOS IC layer overlying the surface region, the CMOS IC layer having at least one CMOS device; (step 506) 4. Form a bottom isolation layer overlying the CMOS IC layer; step (508) 5. Form a shielding layer overlying a portion of the bottom isolation layer; (step 510) 6. Form a top isolation layer overlying a portion of the bottom isolation layer, wherein the bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer; (step 512) 7. Form a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer; (step 514) 8. Etch the MEMS layer to form at least one MEMS structure having at least one movable structure and at least one anchored structure, wherein the at least one anchored structure is coupled to a portion of the top isolation layer, wherein the at least one movable structure is formed overlying the shielding layer; (step 516) and 9. Perform other steps, as desired. (step 518)

(16) The aforementioned steps are provided for the formation of an integrated MEMS-CMOS device using an improved shielding configuration. Of course, depending upon the embodiment, steps or a step can be added, removed, combined, reordered, or replaced, or has other variations, alternatives, and modifications. Further details of the present manufacturing process can be found throughout the present specification, and more particularly below.

(17) As shown in FIG. 5, the method begins with providing a substrate member having a surface region. This substrate member can include silicon materials, such as single crystal and polycrystalline silicon. The method can include forming a CMOS IC layer overlying the surface region, with the CMOS IC layer having at least one CMOS device. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer can be formed overlying a portion of the bottom isolation layer. In a specific embodiment, the shielding layer can be formed within a portion of the bottom isolation layer.

(18) In an embodiment, the method can include forming a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer can include an isolation region configured between the top isolation layer and the shielding layer. In an embodiment, the isolation region is an exposed portion of the bottom isolation layer free from contact with the top isolation layer and the shielding layer. A MEMS layer can be formed overlying the top isolation layer, the shielding layer, and the bottom isolation layer.

(19) The MEMS layer can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure. In a specific embodiment, the etching process can include a plasma etching, a deep reactive-ion etching (DRIE), or other like process. The at least one anchored structure can be coupled to a portion of the top isolation layer and the at least one movable structure is formed overlying the shielding layer. This MEMS structure can include an accelerometer, a gyrometer, a magnetometer, a pressure sensor, or the like.

(20) In a specific embodiment, the shielding layer can include a polysilicon, aluminum, or other like materials. The movable structure and anchored structure layers can include silicon, polysilicon, or other like materials. The top and bottom isolation layers can include silicon dioxide, silicon nitride, or other like materials. The shielding layer can include aluminum, polysilicon, or other like materials. Those of ordinary skill in the art will recognize other variations, modifications, and alternatives.

(21) In a specific embodiment, the shielding layer can include a shielding layer having a single sided partial shielding layer underlying at least a portion of the movable structure. This configuration is similar to the embodiment shown in FIG. 3.

(22) In a specific embodiment, the shielding layer can include a full shielding layer underlying at least a portion of the movable structure and at least a portion of the anchored structure. In this embodiment, the method can further include etching the top isolation layer to form the isolation region between the top isolation layer and the bottom isolation layer. This configuration is similar to the embodiment shown in FIG. 4.

(23) Many benefits are achieved by way of embodiments of the present invention over conventional techniques. For example, embodiments of the present technique provide an easy to use process to integrated MEMS and CMOS circuits on a single die. In some embodiments, the method provides a fabrication process that protects exposed CMOS ICs from PID, leakage path, and other damage issues. Additionally, the method provides a process and system that are compatible with conventional semiconductor and MEMS process technologies without substantial modifications to conventional equipment and processes. Depending upon the embodiment, one or more of these benefits may be achieved.

(24) FIG. 6 is a simplified diagram illustrating a cross-sectional view of an integrated MEMS-CMOS device according to an embodiment of the present invention. This device 600 includes a fully processed CMOS substrate 610 with CMOS circuits 620. An oxide layer 630 and a MEMS structure 640 overly the CMOS substrate 610. A cap structure 650 encapsulates the MEMS structure 640. The region where the cap structure 650 meets the oxide layer 630 is configured with metal stress buffers 631. Here, a metal stress buffer 631 is provided underlying the contact regions of the cap. This arrangement has the advantages of reducing the risk of stress-induced oxide crack and circuit damages.

(25) It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.