Process for fabrication of ytterbium doped optical fiber

Abstract

The present invention provides a process for fabrication of ytterbium (Yb) doped optical fiber through vapor phase doping technique. The method comprises deposition of Al2O3 and Yb2O3 in vapor phase simultaneously in combination with silica during formation of sintered core layer. This is followed by collapsing at a high temperature in stepwise manner to produce the preform and drawing of fibers of appropriate dimension. The process parameters have been optimized in such a way that Al and Yb-chelate compounds can be transported to the reaction zone without decomposition and condensation of precursor materials. Thus variations of dopants concentration along the length of the preform have been minimized to <1% and good repeatability of the process has also been achieved. The resulting fibers also have smooth core-clad boundary devoid of any star-like defect. The process can be reliably adopted for fabrication of large core Yb doped optical fibers. The fibers also show low loss, negligible center dip and good optical properties suitable for their application as fiber lasers.

Claims

1. A process for fabrication of ytterbium (Yb) doped optical fiber through vapor phase doping technique, said process comprising the steps of: (i) depositing pure silica cladding layers inside a silica glass substrate tube at a main burner temperature in the range of 1900 to 1980 C. using MCVD process; (ii) sublimating AlCl.sub.3 and Yb(thd).sub.3 in their respective sublimator chambers at a temperature in the range of 100 to 170 C. and 180 to 260 C. respectively to obtain vapors of Al-precursors and Yb-precursors; (iii) introducing preheated Helium in the sublimator chambers of step (ii) at a flow rate in the range of 10 to 50 sccm for Al precursors and 100 to 300 sccm for Yb precursors; (iv) transporting Al and Yb precursors with Helium obtained in step (iii) to the silica glass substrate tube with the adjustment of temperature of a ribbon burner in the range of 180-370 C., wherein the ribbon burner is fixed before the input end of the silica glass substrate tube; (v) passing O.sub.2 gas into a SiCl.sub.4 bubbler at a temperature in the range of 15 to 40 C. and a flow rate in the range of 80 to 150 sccm to transport SiCl.sub.4O.sub.2 gas mixture to the silica glass substrate tube; (vi) mixing SiCl.sub.4, O.sub.2, Al precursors, Yb-precursors, and Helium in the silica glass substrate tube followed by concurrent oxidation to form SiO.sub.2, Al.sub.2O.sub.3 and Yb.sub.2O.sub.3; (vii) depositing a sintered core layer comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 with targeted Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 concentrations to obtain a deposited tube; (viii) collapsing the deposited tube at a temperature in the range of 1900 to 2300 C. to obtain a fabricated preform; and (ix) drawing fibers from the fabricated preform obtained in step (viii) to obtain ytterbium (Yb) doped optical fiber.

2. The process as claimed in claim 1, wherein in step (i) 4-10 pure silica cladding layers are deposited in the silica glass substrate tube.

3. The process as claimed in claim 1, wherein in step (i) the main burner temperature is in the range of 1910-1960 C.

4. The process as claimed in claim 1, wherein in step (ii) the sublimating temperature for AlCl.sub.3 is in the range of 120 to 160 C.

5. The process as claimed in claim 1, wherein in step (ii) the sublimating temperature for Yb(thd).sub.3 is in the range of 200 to 240 C.

6. The process as claimed in claim 1, wherein in step (iv) the temperature of the ribbon burner is in the range of 200-350 C.

7. The process as claimed in claim 1, wherein in step (vii) the number of core layers is in the range of 1 to 40.

8. The process as claimed in claim 1, wherein in step (vii) the main burner temperature of deposition of sintered core layer is in the range of 1770 to 1920 C.

9. The process as claimed in claim 8, wherein in step (vii) the main burner temperature of deposition of sintered core layer is in the range of 1820-1880 C.

10. The process as claimed in claim 1, wherein in step (vii) the sintered core layer is deposited with the main burner traverse speed in the range of 9 to 14 cm/min, wherein the main burner traverses along the length of the silica glass substrate tube.

11. The process as claimed in claim 1, wherein in step (ix) the NA (Numerical aperture) of the core glass is in the range of 0.06 to 0.32.

12. The process as claimed in claim 1, wherein in step (ix) the Al.sub.2O.sub.3 content of the fiber is in the range of 0.5 to 18 mol %.

13. The process as claimed in claim 1, wherein in step (ix) the Yb.sub.2O.sub.3 concentration of the fiber is in the range of 0.2 to 2.0 mol %.

14. The process as claimed in claim 1, wherein in step (ix) the Yb.sub.2O.sub.3 concentration of the fiber is in the range of 0.25 to 1.25 mol %.

15. The process as claimed in claim 1, wherein in step (viii) the collapsing temperature is in the range of 2050-2250 C.

16. The process as claimed in claim 1, wherein the length of the fabricated preforms is up to 45 cm.

17. The process as claimed in claim 1, wherein the core diameter of the fabricated fiber is in the range of 10 to 50 m out of 125 m overall diameter.

Description

BRIEF DESCRIPTION OF ACCOMPANYING DRAWINGS

(1) FIG. 1 represents OFC-12 MCVD system with high temperature vapor delivery unit.

(2) FIG. 2 represents flowchart for fabrication of Yb doped optical fiber by the present invention.

SUMMARY OF THE INVENTION

(3) Accordingly, present invention provides a process for fabrication of ytterbium (Yb) doped optical fiber through vapor phase doping technique, said process comprising the steps of: (i) depositing pure silica cladding layers inside a silica glass substrate tube at a temperature in the range of 1900 to 1980 C. using Modified chemical vapor deposition (MCVD) process; (ii) sublimating Aluminum (Al) salt and Yb-chelate in their respective sublimator chamber at a temperature in the range of 100 to 170 C. and 180 to 260 C. respectively to obtain Al-precursors and Yb-precursors; (iii) introducing preheated inert carrier gas in the sublimator chamber of step (ii) at a flow rate in the range of 10 to 50 sccm for Al precursors and 100 to 300 sccm for Yb precursors; (iv) transporting Al and Yb precursors with inert gas obtained in step (iii) to the substrate tube with the adjustment of temperature of ribbon burner in the range of 180-370 C.; (v) passing O.sub.2 gas into a SiCl.sub.4 bubbler at a temperature in the range of 15 to 40 C. and a flow rate in the range of 80 to 150 sccm to transport SiCl.sub.4O.sub.2 gas mixture to the substrate tube; (vi) mixing SiCl.sub.4, O.sub.2, Al precursors, Yb-precursors, and inert gas in the substrate tube followed by concurrent oxidation to form SiO.sub.2, Al.sub.2O.sub.3 and Yb.sub.2O.sub.3; (vii) depositing a sintered core layer comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 with targeted Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 concentrations to obtain a deposited tube; (viii) collapsing the deposited tube at a temperature in the range of 1900 to 2300 C. to obtain fabricated preform; and (ix) drawing fibers from the fabricated preform obtained in step (viii) to obtain ytterbium (Yb) doped optical fiber.

(4) In an embodiment of the present invention, 4-10 pure silica cladding layers are deposited in the substrate tube.

(5) In yet another embodiment of the present invention, the temperature is in the range of 1910-1960 C.

(6) In another embodiment of the present invention, the Al salt is AlCl.sub.3.

(7) In yet another embodiment of the present invention, the sublimating temperature for Al salt is in the range of 120 to 160 C.

(8) In yet another embodiment of the present invention, the Yb-chelate is Yb(thd).sub.3.

(9) In yet another embodiment of the present invention, the sublimating temperature for Yb-chelate is in the range of 200 to 240 C.

(10) In yet another embodiment of the present invention, the inert carrier gas is helium.

(11) In yet another embodiment of the present invention, the temperature of ribbon burner is in the range of 200-350 C.

(12) In yet another embodiment of the present invention, the number of core layers is in the range of 1 to 40.

(13) In yet another embodiment of the present invention, the temperature of deposition of sintered core layer is in the range of 1770 to 1920 C.

(14) In still another embodiment of the present invention, the temperature of deposition of sintered core layer is in the range of 1820-1880 C.

(15) In yet another embodiment of the present invention, the sintered core layer is deposited with a burner traverse speed in the range of 9 to 14 cm/min.

(16) In yet another embodiment of the present invention, the NA (Numerical aperture) of the core glass is in the range of 0.06 to 0.32.

(17) In yet another embodiment of the present invention, the Al.sub.2O.sub.3 content of the fiber is in the range of about 0.5 to 18 mol %.

(18) In yet another embodiment of the present invention, the Yb.sub.2O.sub.3 concentration of the fiber is in the range of 0.2 to 2.0 mol %.

(19) In still another embodiment of the present invention, Yb.sub.2O.sub.3 concentration of the fiber is in the range of 0.25 to 1.25 mol %.

(20) In yet another embodiment of the present invention, the collapsing temperature is in the range of 2050-2250 C.

(21) In yet another embodiment of the present invention, the length of the fabricated preforms is up to 45 cm.

(22) In yet another embodiment of the present invention, the core diameter of the fabricated fiber is in the range of 10 to 50 m out of 125 m overall diameter.

(23) In still another embodiment of the present invention, the fabricated fiber exhibits uniform Yb distribution along the longitudinal as well as the radial direction of the preform/fiber with minimal core-clad interface problem.

(24) In yet another embodiment of the present invention, variation of Al concentration at the two ends of the fabricated fiber is negligible.

(25) In yet another embodiment of the present invention, variation in Yb concentration at the two ends of the fabricated fiber is less than <1%.

DETAILED DESCRIPTION OF THE INVENTION

(26) The invention disclosed in the present specification provides a process for fabrication of Yb doped optical fiber through vapor phase doping technique which comprises: (i) deposition of pure silica cladding layers inside a silica glass substrate tube to obtain matched clad type structure; (ii) evaporating anhydrous Al-salt and Yb-chelate by heating them in their respective sublimator chamber; (iii) introducing heated inert gas to transport vapors of Al-salt and Yb-compound to the substrate silica tube; (iv) passing O.sub.2 gas into SiCl.sub.4 bubbler to transport SiCl.sub.4O.sub.2 gas mixture to the substrate tube; (v) mixing of different transported gases viz. SiCl.sub.4O.sub.2AlCl.sub.3Yb-chelate and inert gas into the substrate tube; (vi) concurrent oxidation of introduced vapors to form corresponding oxides viz. SiO.sub.2, Al.sub.2O.sub.3 and Yb.sub.2O.sub.3; (vii) deposition of sintered core layer comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 with targeted Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 concentrations at an appropriate temperature; (viii) collapsing of the tube in steps to obtain preform; and (ix) drawing of fibers from the preform.

(27) The novelty of the present invention lies in fabrication of large core preform/fiber containing Yb.sup.3+ and Al.sup.3+ ions with superior longitudinal and radial uniformity and reduced core-clad interface problem due to which the fiber exhibits improved optical properties and better lasing performance.

(28) In case of vapor phase doping technique, decomposition and condensation of Al and Yb-chelate compounds prior to the reaction zone resulting in variation of dopant concentration along the length of the preform are the two major problems. As a result, the process has not yet been adopted for commercial production.

(29) In the present invention, the process parameters of the vapor phase doping technique have been optimized in such a way that Al and Yb-chelate compounds can be transported to the reaction zone without decomposition and condensation of precursor materials. Thus variation of dopants concentrations along the length and radial direction of the preform, have been minimized and deposition of more than forty core layers without any problem have also been achieved with good repeatability. As deposition of Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 takes place simultaneously in presence of silica during formation of core layer in vapor phase, core-clad interface problem has also been eliminated due to better distribution of dopants into silica network.

(30) The inventive step lies in: 1. Delivery of Al and Yb-chelate compounds in vapor phase without decomposition and/or condensation of the precursor materials prior to the reaction zone. 2. Formation and deposition of Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 simultaneously in presence of silica and/or other refractive index modifying dopants during core layer deposition, so that the dopants are easily incorporated into silica network. 3. Main burner temperature has been optimized in such a way that complete sintering of the deposited layers takes place with negligible decomposition of the precursor materials, leading to enhanced process repeatability.

(31) The present invention is illustrated in FIG. 1 of the drawing accompanying this specification. In the drawing, there is one Main Gas cabinet and one High Temperature cabinet. Main gas cabinet is used to deliver normal MCVD gases (SiCl.sub.4, GeCl.sub.4, He, O.sub.2) while high temperature cabinet is used to supply solid Yb and Al precursor materials in vapor phase. There are three separate delivery lines; one is for normal MCVD gases delivered from main gas cabinet and other two are from high temperature cabinet to transport Al and Yb precursor materials separately. The delivery lines from high temperature cabinet as well as all the lines that pass through the rotary union are kept heated and then the mixture of gases and vapors enters the silica tube. There is one ribbon burner at the input end of the silica tube which provides sufficient temperature for the flow of Yb precursor materials without condensation; but the temperature is not so high that it could be decomposed.

(32) The process starts with flame polishing of the pure silica tube (Type: Heraeus F-300, Size: 24/28 mm or 17/20 mm) at around 1800-1900 C. to remove defects on the inner surface of the tube. Then deposition of pure SiO.sub.2 sintered layers takes place to form matched clad type geometry at a temperature range of 1900-1980 C. using normal MCVD technique. The dopant precursor materials of Al and Yb which are in solid form, sublimated and transformed into their respective vapor phase by heating within the sublimators at the temperature range of 100-170 C. and 180-260 C. respectively. Controlled amount of preheated inert gas, such as Helium is added to the respective sublimator at the flow rates of 10-50 sccm for Al and 100-300 sccm for Yb respectively. Vapors of Al and Yb precursor materials are transported to the reaction zone by a system of highly heated delivery lines with temperature above 200 C., one high-temperature rotary union (temperature >200 C.) and one ribbon burner at the input end of the silica tube. The temperature of the ribbon burner is adjusted in such a way that the decomposition and/or condensation of the dopant precursor materials do not take place at the upstream end of the main burner. Controlled amount of O.sub.2 is added to the SiCl.sub.4 bubbler (maintained at a temperature varying in between 15-40 C.) at the flow rates of 80-150 sccm to supply SiCl.sub.4O.sub.2 gas mixture to the reaction zone. The deposition of Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 takes place simultaneously in presence of silica through vapor phase doping technique. The main burner temperature is adjusted to ensure complete sintering of the core layers with minimal decomposition of the RE compounds prior to the reaction zone. The sintered core layer deposition takes place at a temperature range of 1770-1920 C. with carriage traverse speed of 9-14 cm/min. About 1 to 40 core layers are deposited simultaneously to form large core preform. After completion of the deposition, the tube is collapsed in stepwise manner at a temperature between 1900-2300 C. to obtain the final preform. Fiber is drawn from the two ends of the preforms with diameter of 1250.2 m using a Fiber Drawing Tower. The fibers are characterized in order to determine their geometrical properties, numerical aperture (NA), Yb concentration and to estimate the variation in dopant concentrations over the length of the preforms. Yb concentration is estimated from the absorption peak at 915 nm determined by cut-back method. The dopant concentrations were also evaluated by Electron Probe Micro Analysis (EPMA) to check the dopant uniformity.

(33) The different steps of the process are as follows: (i) deposition of pure silica cladding layers inside a silica glass substrate tube to obtain matched clad type structure; (ii) evaporating anhydrous Al-salt and Yb-chelate by heating them in their respective sublimator chamber; (iii) introducing heated inert gas to transport vapors of Al-salt and Yb-compound to the substrate silica tube; (iv) passing O.sub.2 gas into SiCl.sub.4 bubbler to transport SiCl.sub.4O.sub.2 gas mixture to the substrate tube; (v) mixing of different transported gases viz. SiCl.sub.4O.sub.2AlCl.sub.3Yb-chelate and inert gas into the substrate tube; (vi) concurrent oxidation of introduced vapors to form corresponding oxides viz. SiO.sub.2, Al.sub.2O.sub.3 and Yb.sub.2O.sub.3; (vii) deposition of sintered core layer comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 with targeted Al.sub.2O.sub.3 and Yb.sub.2O.sub.3 concentrations at an appropriate temperature; (viii) collapsing of the tube in steps to obtain preform; and (ix) drawing of fibers from the preform.

(34) The inventive step lies in incorporation of Yb.sub.2O.sub.3 and Al.sub.2O.sub.3 simultaneously in combination with SiO.sub.2 during formation of core layer so that the dopants are easily incorporated into silica network. The process provides good homogeneity with reduced chances of forming RE cluster. Compared to the known techniques, the present method also enables to fabricate larger core preforms with better longitudinal and radial RE uniformity and smooth core-clad boundary with no star like defects. There is also no central dip in the refractive index profile of the fiber. The resulting preform/fiber contains about 0.5 mol % to 18 mol % of Al.sub.2O.sub.3 and about 0.1 mol % to 2.0 mol % of Yb.sub.2O.sub.3.

(35) Thus, the present invention is directed to make large core Yb doped preforms with pre-determined NA to achieve the designed single mode or multimode configurations.

EXAMPLES

(36) The following examples are given by way of illustration and therefore should not be construed to limit the scope of the present invention.

Example 1

(37) Deposition of sintered silica cladding layer was carried out inside a high quality silica tube at a temperature of 1940 C. using MCVD process.

(38) Deposition of sintered core layer (MCVD process) comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 was carried out by maintaining the following parameters: SiCl.sub.4 bubbler temperature: 25 C. Oxygen flow rate through SiCl.sub.4 bubbler: 120 sccm AlCl.sub.3 sublimator temperature: 140 C. Helium flow rate through AlCl.sub.3 sublimator: 20 sccm Yb(thd).sub.3 sublimator temperature: 220 C. Helium flow rate through Yb(thd).sub.3 sublimator: 200 sccm Deposition temperature: 1845 C. Carriage traverses speed: 12.5 cm/min Ribbon burner temperature: 280 C.

(39) The collapsing was carried out in stepwise manner (4 forward collapsing steps at a temperature of 2060, 2130, 2175 and 2210 C. and a back collapsing at 2260 C.) to obtain the final preform.

(40) The fiber was drawn from fabricated preform (length 400 mm) having the following specifications: Core diameter: 12.0 m out of 125 m overall diameter NA: 0.12 Yb.sub.2O.sub.3 concentration: 0.32 mol % Al.sub.2O.sub.3 concentration: 2.6 mol % Variation in Yb concentration at the two ends of the preform: 0.8%

Example 2

(41) Deposition of sintered silica cladding layer was carried out inside a high quality silica tube at a temperature of 1930 C. using MCVD process.

(42) Deposition of sintered core layer (MCVD process) comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 was carried out by maintaining the following parameters: SiCl.sub.4 bubbler temperature: 30 C. Oxygen flow rate through SiCl.sub.4 bubbler: 90 sccm AlCl.sub.3 sublimator temperature: 160 C. Helium flow rate through AlCl.sub.3 sublimator: 25 sccm Yb(thd).sub.3 sublimator temperature: 230 C. Helium flow rate through Yb(thd).sub.3 sublimator: 140 sccm Deposition temperature: 1830 C. Carriage traverses speed: 12.0 cm/min Ribbon burner temperature: 295 C.

(43) The collapsing was carried out in stepwise manner (5 forward collapsing steps at a temperature of 2045, 2090, 2125, 2160 and 2190 C. and a back collapsing at 2230 C.) to obtain the final preform.

(44) The fiber was drawn from fabricated preform (length 350 mm) having the following specifications: Core diameter: 20.0 m out of 125 m overall diameter NA: 0.20 Yb.sub.2O.sub.3 concentration: 0.22 mol % Al.sub.2O.sub.3 concentration: 7.7 mol %

Example 3

(45) Deposition of sintered silica cladding layer was carried out inside a high quality silica tube at a temperature of 1945 C. using MCVD process.

(46) Deposition of sintered core layer (MCVD process) comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 was carried out by maintaining the following parameters: SiCl.sub.4 bubbler temperature: 20 C. Oxygen flow rate through SiCl.sub.4 bubbler: 80 sccm AlCl.sub.3 sublimator temperature: 130 C. Helium flow rate through AlCl.sub.3 sublimator: 38 sccm Yb(thd).sub.3 sublimator temperature: 240 C. Helium flow rate through Yb(thd).sub.3 sublimator: 270 sccm Deposition temperature: 1860 C. Carriage traverses speed: 11.5 cm/min Ribbon burner temperature: 210 C.

(47) The collapsing was carried out in stepwise manner (3 forward collapsing steps at a temperature of 2110, 2170 and 2210 C. and a back collapsing at 2255 C.) to obtain the final preform.

(48) The fiber was drawn from fabricated preform (length 370 mm) having the following specifications: Core diameter: 9.5 m out of 125 m overall diameter NA: 0.14 Yb.sub.2O.sub.3 concentration: 0.85 mol % Al.sub.2O.sub.3 concentration: 3.8 mol %

Example 4

(49) Deposition of sintered silica cladding layer was carried out inside a high quality silica tube at a temperature of 1950 C. using MCVD process.

(50) Deposition of sintered core layer (MCVD process) comprising SiO.sub.2Al.sub.2O.sub.3Yb.sub.2O.sub.3 was carried out by maintaining the following parameters: SiCl.sub.4 bubbler temperature: 25 C. Oxygen flow rate through SiCl.sub.4 bubbler: 130 sccm AlCl.sub.3 sublimator temperature: 148 C. Helium flow rate through AlCl.sub.3 sublimator: 12 sccm Yb(thd).sub.3 sublimator temperature: 200 C. Helium flow rate through Yb(thd).sub.3 sublimator: 160 sccm Deposition temperature: 1890 C. Carriage traverses speed: 10.5 cm/min Ribbon burner temperature: 330 C.

(51) The collapsing was carried out in stepwise manner (5 forward collapsing steps at a temperature of 1980, 2040, 2090, 2150 and 2210 C. and a back collapsing at 2260 C.) to obtain the final preform.

(52) The fiber was drawn from fabricated preform (length 420 mm) having the following specifications: Core diameter: 40.0 m out of 125 m overall diameter NA: 0.11 Yb.sub.2O.sub.3 concentration: 0.08 mol % Al.sub.2O.sub.3 concentration: 2.3 mol % Variation in Yb concentration at the two ends of the preform: 1.7%

Advantages of the Invention

(53) The main advantages of the present invention are: 1. In-situ RE incorporation, free from any mechanical alteration problem during the preform fabrication run. 2. Higher amount of dopants incorporation efficiency as compare to prior art. 3. RE clustering problem is much lower as compared to other conventional preparation methods. 4. The process provides smooth core-clad boundary, without generation of star-like defects which appear for high concentration of Al.sub.2O.sub.3 doping in silica network. 5. Fabrication of large core diameter in preform stage is possible to achieve. 6. Uniform longitudinal and radial distribution of dopants in the core of fiber is also achievable. 7. Larger preform length is achievable as compared to prior art. 8. Process repeatability is much higher as compared to other conventional MCVD methods.