INTEGRATED POWER SWITCHING DEVICE HEAT SINK
20230041227 · 2023-02-09
Inventors
Cpc classification
H01L23/49568
ELECTRICITY
H02K5/15
ELECTRICITY
H02K9/19
ELECTRICITY
H02K11/215
ELECTRICITY
H02K11/00
ELECTRICITY
H02K7/006
ELECTRICITY
H01L24/73
ELECTRICITY
H01L2224/92247
ELECTRICITY
H01L2924/13091
ELECTRICITY
International classification
H02K11/00
ELECTRICITY
H02K5/15
ELECTRICITY
H02K5/22
ELECTRICITY
H02K9/19
ELECTRICITY
Abstract
An electrical assembly that with an inverter that is mounted to the field windings of a stator. The inverter has a plurality of power semiconductor packages (PSP), each of which including a semiconductor die, a plurality of electric terminals, which are electrically coupled to the semiconductor die, and a heat sink with a base, which is fixedly and electrically coupled to one of the electric terminals, and a plurality of fins that extend axially from the base in a direction away from the semiconductor die. The PSP's are arranged in a circumferentially spaced apart manner. The fins are arranged in rows and are progressively longer in length from a radially-inner most fin to a radially-outer most fin. Slots are formed in the base on a radially-inner side of the base. Each slot extends toward a radially-outer side of the base and intersects a corresponding one of the rows of fins.
Claims
1. An electrical assembly comprising: a stator (32) having a plurality of field windings (36), each of the field windings (36) having an associated phase leads (294); and an inverter (204) having an inverter mount (264) and a plurality of power semiconductor packages (262), the inverter mount (264) having an annular mounting flange (295) and a plurality of phase lead bosses (288) that are coupled to the annular mounting flange (295), each of the phase leads (294) being received through a corresponding one of the phase lead bosses (288), each of the power semiconductor packages (262) having a semiconductor die (266), a plurality of electric terminals (272), and a heat sink (274), each of the electric terminals (272) being electrically coupled to the semiconductor die (266), the heat sink (274) having a base (276) and a plurality of fins (280), the base (276) being fixedly and electrically coupled to one of the electric terminals (272), each of the fins (280) extending axially from the base (276) in a direction away from the semiconductor die (266), each of the power semiconductor packages (262) being mounted to the inverter mount (264) such that at least a portion of the electric terminals (272) of each of the power semiconductor packages (262) extends through the mounting flange (295), wherein the power semiconductor packages (262) are arranged in a circumferential spaced apart manner, wherein the fins (280) of each heat sink (274) are arranged in rows, wherein the fins (280) in each row taper such that a radially-inner most one of the fins (280) in each of the rows is shorter than a radially-outer most one of the fins (280) in each of the rows, and wherein a plurality of slots are formed in the base (276) on a radially-inner side of the base (276), each of the slots extending toward a radially-outer side of the base (276) and intersecting a corresponding one of the rows of fins (280).
2. The electrical assembly of claim 1, wherein each row that is intersected by one of the slots has a first quantity of the fins (280) and each row that is not intersected by one of the slots has a second quantity of the fins (280) that is greater than the first quantity.
3. The electrical assembly of claim 1, wherein each of the fins (280) has a first end which is fixedly coupled to the base (276), and a second end that is opposite the first end, and wherein each of the fins (280) tapers between the first and second ends.
4. The electrical assembly of claim 1, wherein the fins (280) in adjacent rows are staggered from one another.
5. The electrical assembly of claim 1, wherein the base (276) tapers between the radially-inner side of the base (276) and the radially-outer side of the base (276).
6. The electrical assembly of claim 5, wherein the radially-inner side of the base (276) is thinner than the radially-outer side of the base (276).
7. The electrical assembly of claim 1, wherein the power semiconductor package (262) comprises an insulated gate bipolar transistor (IGBT), a metal oxide silicon field effect transistor (MOSFET), or a junction field effect transistor (JFET).
8. The electrical assembly of claim 1, wherein the base (276) and the one of the electric terminals (272) are integrally and unitarily formed.
9. The electrical assembly of claim 1, wherein each heat sink (274) is integrally and unitarily formed.
10. The electrical assembly of claim 1, wherein the heat sink (274) and the one of the electric terminals (272) are unitarily and integrally formed.
Description
DRAWINGS
[0011] The drawings described herein are for illustrative purposes only of selected embodiments and not all possible implementations, and are not intended to limit the scope of the present disclosure.
[0012]
[0013]
[0014]
[0015]
[0016]
[0017]
[0018]
[0019]
[0020]
[0021]
[0022]
[0023]
[0024]
[0025]
[0026]
[0027]
[0028]
[0029] Corresponding reference numerals indicate corresponding parts throughout the several views of the drawings.
DETAILED DESCRIPTION
[0030] With reference to
[0031] The housing assembly 12 can house the motor 14, the control unit 16, the transmission and the differential assembly 20. The electric motor 14 can be any type of electric motor and can have a stator 32 and a rotor 34. The stator 32 can include field windings 36, whereas the rotor 34 can include a rotor shaft 38 that can be disposed within the stator 32 for rotation about a first rotational axis 40.
[0032] The transmission 18 can include a planetary reduction 42, a shaft 44 and a transmission output gear 46. The planetary reduction can have a sun gear, which can be unitarily and integrally formed with the rotor shaft 38 to keep pitch line velocity as low as possible, a ring gear, which can be grounded to or non-rotatably coupled to the housing assembly 12, a planet carrier and a plurality of planet gears that can be journally supported by the planet carrier and which can be meshingly engaged with both the sun gear and the ring gear. The sun gear, the ring gear and the planet gears can be helical gears. The shaft 44 can be mounted to a set of bearings 60 that support the shaft for rotation about the first rotational axis 40 relative to the housing assembly 12. The transmission output gear 46 can be coupled to (e.g., unitarily and integrally formed with) the shaft 44 for rotation therewith about the first rotational axis 40.
[0033] The differential assembly 20 can include a final drive or differential input gear 70 and a differential. The differential input gear 70 can be rotatable about a second rotational axis 80 and can be meshingly engaged to the transmission output gear 46. In the example provided, the transmission output gear 46 and the differential input gear 70 are helical gears. The differential can be any type of differential mechanism that can provide rotary power to the output shafts 22a and 22b while permitting (at least in one mode of operation) speed differentiation between the output shafts 22a and 22b. In the example provided, the differential includes a differential case, which is coupled to the differential input gear 70 for rotation therewith, and a differential gearset having a plurality of differential pinions, which are coupled to the differential case and rotatable (relative to the differential case) about one or more pinion axes that are perpendicular to the second rotational axis 80, and a pair of side gears that are meshingly engaged with the differential pinions and rotatable about the second rotational axis 80. Each of the output shafts 22a and 22b can be coupled to an associated one of the side gears for rotation therewith. In the example provided, the output shaft 22b is formed as two distinct components: a stub shaft 90 and a half shaft 92. The stub shaft 90 is drivingly coupled to an associated one of the side gears and extends between an associated gear and the half shaft 92 and is supported by a bearing 94 in the housing assembly 12 for rotation about the second rotational axis 80. Each of the output shaft 22a and the half shaft 92 has a constant velocity joint 100 with a splined male stem. The splined male stem of the constant velocity joint on the output shaft 22a is received into and non-rotatably coupled to an associated one of the side gears. The splined male stem of the constant velocity joint on the half-shaft 92 is received into and non-rotatably coupled to the stub shaft 90.
[0034] In
[0035] Each field capacitor 202 electrically couples an associated one of the power leads 210 to the inverter 204. In the example provided, each field capacitor 202 is relatively small and is disposed in an annular space between the inverter 204 and the housing assembly 12. The annular space can be disposed adjacent to an end of a body of the stator 32 from which the field windings 36 extend. Each field capacitor 202 can be mounted to the inverter 204.
[0036] With reference to
[0037] The power semiconductor package 262 has a semiconductor die 266 that includes a power semiconductor device 268. The power semiconductor device 268 can be any suitable power semiconductor device, such as an insulated gate bipolar transistor (IGBT). In the example provided, the power semiconductor device is a field effect transistor 269, which may be a metal oxide silicon field effect transistor (MOSFET), or a junction field effect transistor (JFET). The power semiconductor package 262 has a plurality of terminals 270 and a plurality of electrically conductive leads 272a, 272b, 272c, 272d (collectively referred to hereinafter as “electrically conductive leads 272”). Each of the electrically conductive leads 272 is electrically coupled to an associated one of the terminals 270.
[0038] The power semiconductor package 262 has a heat sink 274 that is formed of an electrically and thermally conductive material, such as copper or aluminum. The heat sink 274 has a base 276, a mount 278, and a plurality of fins 280. The mount 278 extends from a first side 276a of the base 276 and is coupled to the semiconductor die 266. The plurality of fins 280 are fixedly coupled to the base 276 and extend from a second side 276b of the base 276 that is opposite the first side 276a of the base 276. The base 276 and the mount 278 can be integrally and unitarily formed.
[0039] The power semiconductor package 262 has a case 281 having a first side 281a and a second side 281b that is opposite the first side 281a of the case 281. The case 281 is formed of a first electrically insulating material, such as a resin material. The semiconductor die 266 and the mount 278 are encapsulated in the case 281 during, for example, an overmolding process. The plurality of fins 280 extend from the second side 281b of the case 281.
[0040] The plurality of fins 280 are fixedly coupled to (e.g., unitarily and integrally formed with) the base 276. The fins 280 can be disposed in any desired orientation, such as orthogonal to the electrically conductive leads 272. In one form, the first side 276a has a corrugated shape, and the second side 276b has a linear (or substantially linear) shape. It should be understood that the first side 276a and the second side 276b can have various shapes and are not limited to the examples described herein. The length of the base 276 can gradually (or nongradually) increase from the first side 276a to the second side 276b. Likewise, the length of the fins 280 can gradually (or nongradually) increase from the first side 276a to the second side 276b (i.e., along the x-axis). The power semiconductor packages 262 of the power semiconductor assembly 250 can be arranged in an annular manner as shown in
[0041] Each of the fins 280 on each heat sink 274 can be shaped as desired. For example, some or all of the fins 280 can be shaped as rods, such as the fins 280a shown in
[0042] The semiconductor die 266 is coupled to the mount 278 using a bonding material 282, which may be at least one of a solder material and a sinter material. One of the electrically conductive leads 272 (e.g., the electrically conductive lead 272a) is integrally and unitarily formed with the mount 278. The remaining electrically conductive leads 272 (e.g., electrically conductive leads 272b, 272c, 272d) that are not unitarily and integrally formed with the mount 278 are electrically coupled to an associated terminal 270 via a bond wire 284.
[0043] The power semiconductor package 262 has phase lead bosses 288, which can accept phase leads 294 (
[0044] A method for fabricating the power semiconductor package 262 includes providing the heat sink 274 and attaching the semiconductor die 266 including the power semiconductor device 268 to the mount 278 of the heat sink 274. The method includes coupling each of the leads that is not unitarily and integrally formed with the mount 278 (e.g., electrically conductive leads 272b, 272c, 272d) to an associated terminal 270 via the bond wires 284 and encapsulating the semiconductor die 266 and the mount 278 with the case 281 using an overmolding process.
[0045] With reference to
[0046] With reference to
[0047] In
[0048] With reference to
[0049] With reference to
[0050] In
[0051] In
[0052] In
[0053] In
[0054] With reference to
[0055] In
[0056] With reference to
[0057]
[0058]
[0059] In
[0060]
[0061] The foregoing description of the embodiments has been provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, are interchangeable and can be used in a selected embodiment, even if not specifically shown or described. The same may also be varied in many ways. Such variations are not to be regarded as a departure from the disclosure, and all such modifications are intended to be included within the scope of the disclosure.