ELECTROSTATIC LENS, AND PARALLEL BEAM GENERATION DEVICE AND PARALLEL BEAM CONVERGENCE DEVICE WHICH USE ELECTROSTATIC LENS AND COLLIMATOR
20180211812 ยท 2018-07-26
Inventors
Cpc classification
H01J43/24
ELECTRICITY
G01N23/227
PHYSICS
H01J37/075
ELECTRICITY
H01J37/244
ELECTRICITY
H01J37/09
ELECTRICITY
H01J37/252
ELECTRICITY
International classification
H01J37/05
ELECTRICITY
H01J43/24
ELECTRICITY
H01J37/075
ELECTRICITY
H01J37/09
ELECTRICITY
H01J37/252
ELECTRICITY
Abstract
Provided is a compact device which captures, over a large solid angle range, electrically charged particles emitted from a point source and parallelizes the trajectories of said charged particles. The present invention is configured from: an electrostatic lens comprising a plurality of axisymmetric electrodes (10-14) and an axisymmetric aspherical mesh (2) which has a surface that is concave away from the point source; and a flat collimator plate (3) positioned coaxially with the electrostatic lens. The acceptance angle for the electrically charged particles generated from a point source (7) is 30 or greater. The shape of the aspherical mesh (2), and the potentials and the positions of a ground electrode (10) and application electrodes (11-15) are adjusted so that the trajectories of the electrically charged particles are substantially parallelized by the electrostatic lens. The electrostatic lens and the flat collimator plate are positioned on a common axis.
Claims
1. An electrostatic lens consisting of an axisymmetric or substantially axisymmetric aspherical mesh being concavely shaped against a point source or a light focusing spot and axisymmetric or substantially axisymmetric single or plurality of electrodes, comprising: said aspherical mesh being a spheroid having a major axis from the vicinity of the center of the mesh opening to the mesh center position or substantially a spheroid having a shape with the vicinity of the mesh opening expanding inwardly with a convex curvature; a ratio of an a radius of opening of a mesh electrode connected to a mesh and a ratio of opening of the first electrode said mesh electrode out of said single or a plurality of electrodes being 1.2 or more and 1.6 or less; a ratio of a major axis radius to a minor axis radius in said spheroid being more than 1.0 and 2.0 or less; an acceptance angle for charged particles generated from a point source being 60 with a trajectory of charged particles being parallelized with a deviation angle being less than +1.
2. An electrostatic lens, letting the number of electrodes being that after eliminating said mesh electrode and a reduction ratio being a ratio of a kinetic energy at a termination electrode against a kinetic energy at a time of charged particle generation, as set forth in claim 1, further satisfying either one of 1)5) below: 1) a ratio of a major axis radius to minor axis radius at said spheroid being 1.69 or more and 1.89 or less in a case wherein a number of electrodes being 1 and a reduction ratio being 0.1 or more and 0.3 or less; 2) a ratio of a major axis radius to minor axis radius at said spheroid being 1.56 or more and 1.76 or less in a case wherein a number of electrodes being 2 and a reduction ratio being 0.1 or more and 0.3 or less; 3) a ratio of a major axis radius to minor axis radius at said spheroid being 1.52 or more and 1.72 or less in a case wherein a number of electrodes being 3 and a reduction ratio being 0.1 or more and 0.3 or less; 4) a ratio of a major axis radius to minor axis radius at said spheroid being 1.49 or more and 1.69 or less in a case wherein a number of electrodes being 4 and a reduction ratio being 0.1 or more and 0.3 or less; 5) a ratio of a major axis radius to minor axis radius at said spheroid being 1.39 or more and 1.59 or less in a case wherein a number of electrodes being 5 and a reduction ratio being 0.1 or more and 0.3 or less.
3. An electrostatic lens as set forth in claim 2, further comprising: a ratio of a major axis radius to minor axis radius being more than 1.0 and less than 1.5 in said spheroid in a case wherein said reduction ratio being 0.01 or more and less than 0.1.
4. An electrostatic lens as set forth in claim 1, further comprising: a mesh shape of said substantially spheroid having a discrepancy from a long axis in radial direction being 5% or less in comparison with a spheroid with a same long axis radius and a short axis radius; an inflection point existing in a plot of deviation angle in said radius direction after first-order differentiation thereof at a position where an angle formed between an axis connecting a point source with a mesh shaped surface being larger than 40.
5. An electrostatic lens as set forth in claim 1, further comprising: a mesh shape of said substantial spheroid being expressed by d.sub.mesh being expressed by a polynomial function as expressed by a mathematical formula below.
6. A parallel beam generation apparatus being configured with an electrostatic lens as set forth in claim 1 and a planar collimator plate positioned coaxially with said electrostatic lens, further comprising: said electrostatic lens and said planar collimator plate being positioned coaxially with each other, with a acceptance angle of charged particles generated at a point source being 60; a trajectory of charged particles being parallelized with a deviation angle being parallelized to 1 or less so that the charged particles being incident approximately made vertical on the planar collimator plate.
7. A parallel beam generation apparatus as set forth in claim 6, further comprising: said planar collimator plate functioning as a band-pass filter for selecting only charged particles of a specific kinetic energy.
8. A parallel beam generation apparatus as set forth in claim 7, further comprising: a planar microchannel plate being a bundle of minute photomultipliers being further positioned on a plate, and; charged particles of a specific kinetic energy emitted from said planer collimator plate being amplified by an avalanche current.
9. A parallel beam generation apparatus as set forth in claim 6, further comprising: said planar collimator plate being furnished with pores of aspect ratio (a ratio of pore diameter to pore length) being from 1:5 to 1:20 at an pore opening ratio of 50% or more.
10. A parallel beam generation apparatus as set forth in claim 6, further comprising: said electrode and a sweeping means for sweeping a potential of said planar collimator plate.
11. An angle distribution measurement and analysis apparatus consisting of a parallel beam generation apparatus as set forth in claim 6, further comprising: a fluorescent screen and camera means being further provided; an angle distribution of the charged particles of a specific kinetic energy emitted from said planar collimator plate being measured as an image by said camera means after converting to bright spots on said fluorescent screen.
12. An angle distribution measurement and analysis apparatus as set forth in claim 11, further comprising: a retarding-voltage plane grid for preforming lock-in detection of change in current by charged particles passing through said grid by changing DC voltage being applied to said grid, being further provided, and charged particles of specific kinetic energy emitted from said planar collimator plate being detected.
13. An angle distribution measurement and analysis apparatus as set forth in claim 11, further comprising: a delay-line detector being further provided, a time-resolution angular distribution measurement being performed by measuring an emission angle and an arrival time of an individual charged particle of a specific kinetic energy being emitted from said collimator plate using said delay-line detector, individually.
14. An apparatus selected from an Electron Spectrometers, an Electron Diffraction Devices, a Photoemission Spectrometers, Photoelectron Diffraction Devices, Positron Spectrum Devices, Positron Diffraction Devices, Ion Detachment Angle Distribution Measurement System, Crystal Structure Analyzing Devices, Material Surface Analyzing Devices and Solid State Material Physical Properties Analyzer; including therein an angle distribution measurement and analysis apparatus of charge particle energy included in claim 11.
15. A precision ion etching apparatus for ion etching or ion sputtering, having a parallel beam generating device of claim 6, and being incorporated as a single-energy large-diameter ion-beam source.
16. A large solid angle X-ray detector for amplifying electrons generated at said planar collimator plate with said collimator plate setting as a minus potential and said fluorescent screen setting as a plus potential in an angle distribution measurement and analysis system as set forth in claim 11.
17. A parallel beam focusing apparatus, comprising: being configured with an electrostatic lens in claim 1 and said electrostatic lens and a planar collimator plate being placed coaxially to each other; said electrostatic lens and said planar collimator plate being placed coaxially so that a trajectory of a charged particle of a specific kinetic energy incident on said planar collimator plate substantially perpendicular be focused on said focusing point by said electrostatic lens.
18. A parallel beam focusing apparatus as set forth in claim 17, further comprising: said planar collimator plate being constituted with minute pores of an aspect ratio (a ratio of pore radius and pore length) from 1:5 to 1:20 at an pore opening ratio of 50% or more.
19. A charged particle flow direction/energy measurement apparatus comprising a plural number of parallel beam focusing apparatuses of claim 17 being positioned, further comprising: said planar collimator plate being functioning as a band-pass filter for selecting charged particles of a specific kinetic energy, and energy intensity of charged particles only of a specific energy being measured by focusing the particles to one point by said electrostatic lens by extracting a charged particle flow in a specific direction by said planar collimator plate.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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BEST MODE FOR CARRYING OUT THE INVENTION
[0088] Embodiments of the present invention will be described in detail below with reference to the drawings. The present invention is not limited to the following embodiment and examples of shown in the figure, and the present invention can be variously changed in design.
Embodiment 1
[0089]
[0090] When the sample surface 20 is irradiated by the excitation beam, charged particles (electrons or ions) are emitted from the point source 7 serving as the irradiation point with a specific opening angle.
[0091] In the parallel beam generating apparatus of this embodiment, the acceptance angle of the charged particles generated at the point source 7 is about 58 and the mesh shape of the aspherical mesh 2 and the potential and the arrangement of 5 electrodes (1014) are adjusted so that the trajectory of the charged particles is collimated by the electrostatic lens. And the electrostatic lens and the planer collimator 3 are arranged to be coaxial so that the charged particles enter perpendicularly on the planar collimator plate 3 after the trajectory of the charged particles is placed coaxially against the axis.
[0092] The excitation beam is irradiated on the sample surface 20 through the excitation beam guide 21 so that there is no interference with the charged particles generated at the point source 7. In the case where the acceptance angle of the charged particles generated at the point source 7 is about 58, the excitation beam guide tube 21 is positioned so that the incident angle of the excitation beam becomes more than 75 with respect to the sample surface 20.
[0093] As shown in
[0094] The acceptance angle from a point source and the trajectory of the charged particle are explained by referencing
[0095] For example, a case wherein a single crystal surface being as a sample surface 20, using an X-ray as an excitation beam, and electrons are emitted from a light source 7 is explained. In the parallel beam generation apparatus according to this embodiment, the electron beam can be collimated with the range of the acceptance angle range being 058 at the energy of the electron emitted for the point source 7 being 1000 eV.
[0096] One example of electrode placement and potential is explained. Each electrode 10 to 15 is a coaxial ring-shaped electrode. Among the five electrodes (1014) that constitutes the electrostatic lens, as shown in
[0097] In the case where the electron beam with energy of x keV is collimated, the potential of each electrode is 0 V for the electrode 10, 520V for the electrode 11, 780V for the electrode 12, 888V for the electrode 13, 914.5V for the electrode 14 and 950V for the electrode 15.
[0098] Next, the shape of the aspherical mesh is explained by referencing
[0099] In order to generate an electric field so that the force in the direction of the center axis increases relatively against the charged particles emitted for the point source, the shape of the mesh is not spherical but is close to spheroidal having a major axis in the axial direction.
[0100] The trajectory of electrons with energy different from 1000 eV but with the same electrode placing and the potential in the parallel beam generation apparatus shown in
[0101]
[0102] The potential of each electrode, similarly as the case shown in
[0103] As can be seen in the trajectories of electron shown in
[0104] The transmittance of the planar collimator plate is explained referencing
[0105]
Embodiment 2
[0106] Next, a case wherein the number of electrodes of the electrostatic lens is different in the parallel beam generation apparatus of the embodiment 1 is explained referencing
[0107]
[0108] As a result of the simulation, it is known that more than 5 electrodes as shown in
[0109] Next, in the parallel beam generation apparatus, optimization of the shape of the aspheric mesh was conducted according to embodiments with different number of electrodes.
[0110] As the number of electrodes increases, the ratio of the major axis to the minor axis becomes smaller and the shape becomes nearer to a sphere. By introducing a shape extending inwardly along the curvature of convex at vicinity of the mesh opening portion, it becomes possible to securely collimate from the point source to the vicinity of emitting angle 60.
Embodiment 3
[0111] An ion etching apparatus in which a parallel beam generating apparatus shown in
[0112] Ion etching apparatus is used for semiconductor micro device manufacturing, tools cutting, removal of coating on electric and electronic devices, removal of micro size burr, advanced profiling, removal of smear adhered at the metal material surface and activation of metal surface, and an ion beam emitted from an ion beam source is chemically reacted with atoms at the etching surface, or material surface for etching is scraped by a physical chemistry method, thus etches the shape of the material surface.
[0113] As described above, a large-diameter parallel ion beam of single kinetic energy can be generated after taking in ions in a large solid angle range by using the parallel beam generation apparatus in Embodiment 1 or Embodiment 2. Namely, it becomes possible to make the ion beam source of the ion etching apparatus the large-diameter parallel-ion-beam source by using the parallel beam generation apparatus in Embodiment 1 or Embodiment 2. Resultantly, a precise shape control etching becomes possible by achieving molding of high aspect ratio without processing sag at edges even in the pattern processing using masks because an ion beam irradiates the sample surface vertically even in places far away from the ion beam center. Also, it becomes possible to control the thickness of the thin film to be etched because controlling of the etching speed becomes easier when an ion of single energy is employed.
Embodiment 4
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[0115] In the conventional blocking electric field type apparatus, the S/B ratio (Signal/Background ratio) is poor and the amplification by the planar microchannel plate is difficult. For the lock-in detection, in contrast to the fact that the electric-field modulation of 1 V to 10 V is employed, the angle distribution measurement and analysis apparatus in
Embodiment 5
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[0117] When the core level is excited using X-rays and electrons, valence electrons and so on are decay into the generated core hole, and Auger electrons and fluorescent X-rays are released by gaining that excess energy. Auger electrons having short mean free path is released from the vicinity of the sample surface, and fluorescent X-ray having long mean free path is released also from the inside of the crystal. In the X-ray absorption spectroscopy measurement, Auger electrons and fluorescent X-rays are released in proportion to the X-ray absorption intensity, and Auger electron yield method X-ray absorption measurement and fluorescent X-ray yield method X-ray absorption measurement have been conducted so far using separate detectors. The fluorescent X-rays propagate linearly regardless of an electric field, all the fluorescent X-rays reach the fluorescent screen and cannot be removed in the retarding-voltage-type electron analyzer using the conventional spherical mesh.
[0118] In the embodiment 4 described above, fluorescent X-ray can be eliminated at the time of Auger electron analysis by blocking the path of the fluorescent X-ray that travels in a straight line by combining the planar collimator plate 3 and the retarding-voltage plane grid 32. Contrarily, in the embodiment 5, the signal intensity of the fluorescent X-ray can be converted to electron by the planar collimator plate 3, making it possible to be put to use as a large-solid-angle X-ray detector, by applying a plus potential at the retarding-voltage plane grid 32 and the fluorescent screen 4 and preventing Auger electron by applying a negative potential at the planar collimator plate 3.
[0119] As have been described above, Auger electrons and fluorescent X-rays can be measured by the same detector only by reversing the electric field direction to be applied according to the present invention, converting to another detector that provides information regarding X-ray absorption information depending on the surface and the bulk deep inside the crystal.
[0120] Here, at the time of X-ray detection, a planar micro-channel plate 31 is positioned to amplify electrons because it is necessary to amplify after converting the X-ray to electrons by the planar collimator plate 3. On the other hand, the retarding-voltage plane grid 32 which is necessary to conversely bounce back the electrons generated from the X-ray at the time of X-ray elimination. Note that electrodes 1114 are connected to earth and the electrode 15 is set to a negative potential in the configuration of
Embodiment 6
[0121] A parallel beam converging apparatus capable of measuring the intensity of the charged particles by a process of reversing the entrance and the exit of the parallel beam generation apparatus shown in
[0122] The parallel beam converging apparatus, similar to the configuration shown in
[0123] However, in the parallel beam converging apparatus, the doorway is reversed when compared with the parallel beam generating apparatus. Also, the fluorescent screen 4 and the excitation beam induction pipe 21 are not necessary in the parallel beam converging apparatus compared with the case of the parallel beam generation apparatus.
[0124] The potentials of electrodes 10 to 15 are the same as in the embodiment 1, with the electrode 10 being 0 V (fixed to the ground potential), the electrode 11 being 520 V, the electrode 12 being 780 V, the electrode 13 being 888 V, the electrode 14 being 914.5 V and the electrode 15 is 950 V.
[0125] Here, the planar collimator plate 3 functions as a band-pass filter that selects only charged particles of specific energy, and extracts a charged particle flow in a specific direction. The planar collimator plate 3 is furnished with pores of the aspect ratio (the ratio of the pore size to the pore length) being 1:10.
[0126] The shape of the aspheric mesh is a substantial spheroid whose major axis is from the vicinity of the center of the mesh opening to the mesh center and the vicinity of the mesh opening widens with an inwardly convex curvature.
Embodiment 7
[0127] In embodiments 7 and 8, an embodiment of an electrostatic lens is described.
[0128] In the electrostatic lens according to the present invention, the optical system comprised of a plural number of electrodes, at least one of which is provided with an aspherical mesh having a concave with respect to the object plane. This aspherical mesh captures charged particles from a point source over a large solid angle and collimates the trajectory of captured charges with high parallelism.
[0129] The shape of the aspherical mesh can be designed using the surface of spheroid, in the case where the acceptance angle for charged particles generated at the point source is 60 and having the deviation angle of the trajectory of the charged particle equal or less than 1 for parallelization, not necessitating such a high parallelism.
[0130] Furthermore, the number of electrodes excepting the mesh electrodes fixed to the ground potential, can be a minimum of 1 in cases where the acceptance angle for parallelizing can be less than around 50 or such a high parallelism is not needed.
[0131] In the following, the shape of the aspheric mesh is designed by a surface of spheroid, and for the electrostatic lens with 1 to 5 electrodes, the trajectory and parallelism of these charged particles will be explained.
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[0134] A mesh of spheroid shape is connected to the mesh electrode (G). The major axis to minor axis ratio of the spheroid is set at 1.79. The termination of the first electrode (EL1) corresponds to the planar collimator. The voltages applied to the mesh electrode (G) and the first electrode (EL1), respectively are 0 V and 775 V, against an electron of 1 KeV.
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[0136] For collimation, the way to position the electrodes in addition to the shape of the mesh is important. In particular, the positional relationship between the mesh electrode (G) and the first electrode (EL1) becomes important. According to the calculations, assuming that the opening radiuses of the mesh electrode (G) and the first electrode (E1) are R1 and R2 (Refer to
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[0138] The electrostatic lens shown in
[0139] Also,
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[0141] The electrostatic lens having 3 electrodes shown in
[0142] Also, in
[0143] As has been explained, in the cases of the electrostatic lens with 2 electrodes (
[0144] When an attention is paid to the shape of the aspheric mesh, it is known that the proper aspheric mesh shape changes to spheroid having smaller major axis to minor axis ratio by changing the number of electrodes. In the examples of
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[0146] The electrostatic lens having 4 electrodes in
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[0148] In the electrostatic lens having 5 electrodes as shown in
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[0150] In electrostatic lenses in
[0151] The reduction ratios in
[0152] In
Embodiment 8
[0153] Next, in the electrostatic lens according to the present invention, the mesh shape is not designed by the spherical surface but by an aspherical surface mesh having a shape different from the spherical surface is used, in a case where the acceptance angle for the charged particles generated at the point source is 60, and the trajectory of the charged particles is parallelized with the deviation angle from the analyzer symmetric axis being 1 or less, and further when higher parallelism is needed in comparison with the electrostatic lens shown in Embodiment 7 described above.
[0154] More specifically, the shape of the aspherical mesh is designed with the radius direction deviation from the major axis being 5% or less and also, an inflection point exists in the plot of first-order angle differentiation of the deviation in the radius direction described above, at the position where the angle formed by the axis connecting the point source and the mesh-shaped surface and the major axis being larger than 40.
[0155] Specifically, the aspherical mesh shape can be represented by d.sub.mesh expressed by the following polynomial function equation.
[0156] In the equation of the polynomial function above, as shown in
[0157]
[0158] The dimension n of the polynomial function is 5, and the value of each parameter is as shown in Table 1 below.
TABLE-US-00001 TABLE 1 Parameter Value d1 27.1 (mm) d2 14.3 (mm) max 65.2 () a1 0.012 a2 0.365 a3 0.38 a4 0.307 a5 0.008
[0159] In
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[0162] From the above, in electrostatic lenses in Embodiment 7 and 8, it was confirmed that the more adequate mesh shape is a smooth curve having an inflection point on the higher angle side with a discrepancy of less than about 5% in various designs with different a number of electrodes, acceptance angles and reduction ratios. Note, however, that the position of the inflection point and the discrepancy from the spheroid changes depending on the number of electrodes, the major axis minor axis ratio, or a design of parameters polynomial function. The main points of designing of electrostatic lenses in embodiments 7 and 8 are summarized as follows.
[0163] (1) In a case where the acceptance angle can be around or less than 50, or a parallelism required in not so high, more specifically in a case where the parallelism can be about 0.5, the shape of the aspherical mesh can be a spheroid.
[0164] (2) The ratio (R2/R1) of the opening radius R1 of the mesh electrode connected to the aspherical mesh and fixed to the ground potential to the opening radius R2 of the first electrode adjacent to the mesh electrode is preferably equal to or more than 1.2 and equal to or less than 1.6.
[0165] (3) The number of electrodes excluding the mesh electrode (hereinafter the same) is 1 and the reduction ratio is equal to or more than 0.1 and equal to or less than 0.3, the major axis to minor axis ratio of the spheroid is preferably equal to or more than 1.69 or equal to or less than 1.89.
[0166] (4) When the number of electrodes is 2 and the reduction ratio is equal to or more than 0.1 and equal to or less than 0.3, the major axis to short axis ratio of the spheroid is preferably equal to or more than 1.56 and equal to or less than 1.76.
[0167] (5) When the number of electrodes is 3 and the reduction ratio is equal to or more than 0.1 and equal to or less than 0.3, the major axis to short axis ratio of the spheroid is preferably equal to or more than 1.52 and equal to or less than 1.72.
[0168] (6) When the number of electrodes is 4 and the reduction ratio is equal to or more than 0.1 and equal to or less than 0.3, the major axis to short axis ratio of the spheroid is preferably equal to or more than 1.49 and equal to or less than 1.69.
[0169] (7) When the number of electrodes is 5 and the reduction ratio is equal to or more than 0.1 and equal to or less than 0.3, the major axis to short axis ratio of the spheroid is preferably equal to or more than 1.39 and equal to or less than 1.59.
[0170] (8) Regardless the number of electrodes, when reduction ratio is equal to or more than 0.01 and less than 0.1, the major axis to minor axis of the spheroid is preferably more than 1.0 and less than 1.5.
[0171] (9) When a higher parallelism, concretely a parallelism of 0.3 or less is required, the aspherical mesh shape is not a spheroid but is preferably designed by a smooth curve having an inflection point on the higher angle side with a deviation from that of the spheroid is about 5% or less.
INDUSTRIAL APPLICABILITY
[0172] The electrostatic lens and the parallel beam generating apparatus using the same according to the present invention are useful for a measurement of band dispersion at the crystal surface by the angle-resolved photoelectron spectroscopy, Fermi surface mapping, depth direction composition analysis, atomic structure analysis by electron diffraction and photoelectron diffraction, adsorbed molecular structure analysis by angle distribution of ion emission.
[0173] Also, the parallel beam focusing apparatus according to the present invention is useful for a charge particle flow direction and energy measurement which measures the energy intensity of a specific energy particle after focusing to one point by an electrostatic lens.
DESCRIPTION OF SYMBOLS
[0174] 1. Parallel beam generating apparatus [0175] 2. Aspherical mesh [0176] 3. Planar collimator plate [0177] 4. Fluorescent screen [0178] 5. Axis [0179] 6. Trajectory [0180] 7. Point source [0181] 8. Magnetic shielding cover [0182] 10-17. Electrode [0183] 20. Sample surface [0184] 21. Excitation beam guide [0185] 30. Lock-in modulation electric field [0186] 31. Planar microchannel plate [0187] 32. Retarding-voltage plane grid