INTEGRATED CIRCUIT AND ELECTRONIC APPARATUS
20180212607 ยท 2018-07-26
Assignee
Inventors
Cpc classification
International classification
Abstract
An integrated circuit according to an embodiment includes: first through third basic tiles, the second basic tile being located between the first basic tile and the third basic tile, each of the basic tiles including a first logic block configured to perform a logical operation and a first switch block, the first switch block including a first switch circuit, the first switch circuit including: two-terminal switch elements arranged in a matrix form; input terminals, each of the input terminals being connected to one of terminals of each of the two-terminal switch elements aligned in the same column; and output terminals, each of the output terminals being connected to the other one of the terminals of each of the two-terminal switch elements aligned in the same row.
Claims
1. An integrated circuit comprising: first through third basic tiles, the second basic tile being located between the first basic tile and the third basic tile, each of the basic tiles including a first logic block configured to perform a logical operation and a first switch block, the first switch block including a first switch circuit, the first switch circuit including: two-terminal switch elements arranged in a matrix form; input terminals, each of the input terminals being connected to one of terminals of each of the two-terminal switch elements aligned in the same column; and output terminals, each of the output terminals being connected to the other one of the terminals of each of the two-terminal switch elements aligned in the same row; a first wiring line connecting the first switch circuit of the first basic tile to the first logic block of the first basic tile; a second wiring line connecting the first switch circuit of the first basic tile to the first switch circuit of the second basic tile; a third wiring line directly connecting the first switch circuit of the first basic tile to the first switch circuit of the third basic tile; a fourth wiring line connecting the first switch circuit of the second basic tile to the first logic block of the second basic tile; a fifth wiring line connecting the first switch circuit of the second basic tile to the first switch circuit of the third basic tile; and a sixth wiring line connecting the first switch circuit of the third basic tile to the first logic block of the third basic tile, wherein the third wiring line is connected to one of the input terminals of the first switch circuit of the second basic tile.
2. The integrated circuit according to claim , further comprising: a fourth basic tile located between the second basic tile and the third basic tile, the fourth basic tile including a second logic block configured to perform a logical operation and a second switch block, the second switch block including a second switch circuit, the second switch circuit including: two-terminal switch elements arranged in a matrix; input terminals, each of the input terminals being connected to one of terminals of each of the two-terminal switch elements aligned in the same column; and output terminals, each of the output terminals being connected to the other one of the terminals of each of the two-terminal switch elements aligned in the same row; a seventh wiring line connecting the second switch circuit of the fourth basic tile to the second logic block of the fourth basic tile; an eighth wiring line connecting the second switch circuit of the fourth basic tile to the first switch circuit of the second basic tile; and a ninth wiring line connecting the second switch circuit of the fourth basic tile to the first switch circuit of the third basic tile, wherein the third wiring line is connected to one of the input terminals of the second switch circuit of the fourth basic tile.
3. The integrated circuit according to claim 1, wherein the two-terminal switch elements are gate oxide film breakdown anti-fuse elements.
4. The integrated circuit according to claim 1, wherein the two-terminal switch elements are resistive change elements.
5. An integrated circuit comprising: a basic tile including a logic block configured to perform a logical operation and a switch block, the switch block including a switch circuit, the switch circuit including: two-terminal switch elements arranged in a matrix form; input terminals, each of the input terminals being connected to one of terminals of each of the two-terminal switch elements aligned in the same column; and output terminals, each of the output terminals being connected to the other one of the terminals of each of the two-terminal switch elements aligned in the same row; and a wiring line connecting the switch circuit and the logic block.
6. The integrated circuit according to claim 5, wherein the two-terminal switch elements are gate oxide film breakdown anti-fuse elements.
7. The integrated circuit according to claim 5, wherein the two-terminal switch elements are resistive change elements.
8. An electronic apparatus comprising: the integrated circuit according to claim 1; a memory storing a program; and a processor configured to perform processing on the integrated circuit in accordance with the program stored in the memory.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0028] An integrated circuit according to an embodiment includes: first through third basic tiles, the second basic tile being located between the first basic tile and the third basic tile, each of the basic tiles including a first logic block configured to perform a logical operation and a first switch block, the first switch block including a first switch circuit, the first switch circuit including: two-terminal switch elements arranged in a matrix form; input terminals, each of the input terminals being connected to one of terminals of each of the two-terminal switch elements aligned in the same column; and output terminals, each of the output terminals being connected to the other one of the terminals of each of the two-terminal switch elements aligned in the same row; a first wiring line connecting the first switch circuit of the first basic tile to the first logic block of the first basic tile; a second wiring line connecting the first switch circuit of the first basic tile to the first switch circuit of the second basic tile; a third wiring line directly connecting the first switch circuit of the first basic tile to the first switch circuit of the third basic tile; a fourth wiring line connecting the first switch circuit of the second basic tile to the first logic block of the second basic tile; a fifth wiring line connecting the first switch circuit of the second basic tile to the first switch circuit of the third basic tile; and a sixth wiring line connecting the first switch circuit of the third basic tile to the first logic block of the third basic tile, wherein the third wiring line is connected to one of the input terminals of the first switch circuit of the second basic tile.
[0029] Before embodiments of the present invention are described, the course of events before the present inventor achieved the present invention will be described below.
[0030] First, the configuration of a typical FPGA is described. As shown in
[0031] Also, each switch block 130 connects to each corresponding logic block 120. The logic blocks 120 and the switch blocks 130 can perform connection control in accordance with the data stored in the respective configuration memories.
[0032] As shown in
[0033] In addition to that, the logic block 120 may include flip flop circuits 126a and 126b, and a hard macro 128. The flip-flop circuit 126a is connected to an output terminal of the LUT circuit 122, and the flip-flop circuit 126b is connected directly to an input terminal of the logic block 120. Here, the hard macro 128 is a group of circuits that are designed in advance. For example, as shown in
[0034] Each switch block 130 includes multiplexer circuits (hereinafter also referred to as MUX circuits), for example. Each MUX circuit has a function to select one of the inputs connected thereto, and connect the selected input to an output. The switch block 130 includes the same number of MUX circuits as the number of the output terminals of the switch block 130. Also, the MUX circuits in the switch block 130 are connected to the output terminals of the logic block 120, to connect the output terminals of the logic block 120 to wiring lines. Inputting to the logic block 120 is achieved by inputting one or all of the output terminals of the MUX circuits to the logic block 120.
[0035]
[0036] The input terminals of the MUX circuit 131.sub.1 are connected to a wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, a wiring line 135.sub.S1 through which a signal input from the lower side is transferred, a wiring line 135.sub.N2 through which a signal input from the upper side is transferred, and a wiring line 135.sub.W2 through which a signal input from the left side is transferred, and the output terminal is connected to a wiring line 136.sub.E1 through which a signal to be transferred to the right side is output.
[0037] The input terminals of the MUX circuit 131.sub.2 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, a wiring line 135.sub.S2 through which a signal input from the lower side is transferred, a wiring line 135.sub.N1 through which a signal input from the upper side is transferred, and a wiring line 135.sub.W1 through which a signal input from the left side is transferred, and the output terminal is connected to a wiring line 136.sub.E2 through which a signal to be transferred to the right side is output.
[0038] The input terminals of the MUX circuit 131.sub.3 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, a wiring line 135.sub.S2 through which a signal input from the lower side is transferred, a wiring line 135.sub.E1 through which a signal input from the right side is transferred, and the wiring line 135.sub.W2 through which a signal input from the left side is transferred, and the output terminal is connected to a wiring line 136.sub.N1 through which a signal to be transferred to the upper side is output.
[0039] The input terminals of the MUX circuit 131.sub.4 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, the wiring line 135.sub.S1 through which a signal input from the lower side is transferred, a wiring line 135.sub.E2 through which a signal input from the right side is transferred, and the wiring line 135.sub.W1 through which a signal input from the left side is transferred, and the output terminal is connected to a wiring line 136.sub.N2 through which a signal to be transferred to the upper side is output.
[0040] The input terminals of the MUX circuit 131.sub.5 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, the wiring line 135.sub.E2 through which a signal input from the right side is transferred, the wiring line 135.sub.N1 through which a signal input from the upper side is transferred, and the wiring line 135.sub.S2 through which a signal input from the lower side is transferred, and the output terminal is connected to a wiring line 136.sub.W1 through which a signal to be transferred to the left side is output, and a wiring line 138 extending to an input terminal of the logic block 120.
[0041] The input terminals of the MUX circuit 131.sub.6 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, the wiring line 135.sub.E1 through which a signal input from the right side is transferred, the wiring line 135.sub.N2 through which a signal input from the upper side is transferred, and the wiring line 135.sub.S1 through which a signal input from the lower side is transferred, and the output terminal is connected to a wiring line 136.sub.W2 through which a signal to be transferred to the left side is output, and the wiring line 138 extending to an input terminal of the logic block 120.
[0042] The input terminals of the MUX circuit 131.sub.7 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, the wiring line 135.sub.E2 through which a signal input from the right side is transferred, the wiring line 135.sub.N2 through which a signal input from the upper side is transferred, and the wiring line 135.sub.W1 through which a signal input from the left side is transferred, and the output terminal is connected to a wiring line 136.sub.S1 through which a signal to be transferred to the lower side is output, and the wiring line 138 extending to an input terminal of the logic block 120.
[0043] The input terminals of the MUX circuit 131.sub.8 are connected to the wiring line group 137 through which signals from the output terminals of the logic block 120 in the same basic tile are transferred, the wiring line 135.sub.E1 through which a signal input from the right side is transferred, the wiring line 135.sub.N1 through which a signal input from the upper side is transferred, and the wiring line 135.sub.W2 through which a signal input from the left side is transferred, and the output terminal is connected to a wiring line 136.sub.S2 through which a signal to be transferred to the lower side is output, and the wiring line 138 extending to an input terminal of the logic block 120. Each of these MUX circuits 131 is formed with a CMOS circuit shown in
[0044] Each memory M.sub.i (i=1, . . . , 4) stores data 0 or data 1. Such data is stored into each memory M.sub.i from outside when the FPGA is used. The input terminals of the inverters 144a.sub.i and inverters 144c.sub.i (i=1, . . . , 4) are connected to the respective memories M. The input terminals of the inverters 144b.sub.i (i=1, . . . , 4) are connected to the output terminals of the inverters 144a.sub.i.
[0045] Each transfer gate 146.sub.ij (i=1, . . . , 4, j=1, . . . , 2.sup.4-i) includes a p-channel MOS transistor and an n-channel MOS transistor connected in parallel.
[0046] In the select circuit 142.sub.1, the gate of the p-channel MOS transistor of each of the transfer gates 146.sub.11, 146.sub.13, 146.sub.15, and 146.sub.17 is connected to the output terminal of the inverter 144c.sub.1, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144b.sub.1. Also, in the select circuit 142.sub.1, the gate of the p-channel MOS transistor of each of the transfer gates 146.sub.12, 146.sub.14, 146.sub.16, and 146.sub.18 is connected to the output terminal of the inverter 144b.sub.1, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144c.sub.1. The input terminals of the respective transfer gates 146.sub.1j (j=1, . . . , 8) are connected to the output terminals of the inverters 145.sub.j.
[0047] In the select circuit 142.sub.2, the gate of the p-channel MOS transistor of each of the transfer gates 146.sub.21 and 146.sub.23 is connected to the output terminal of the inverter 144c.sub.2, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144b.sub.2. Also, in the select circuit 142.sub.2, the gate of the p-channel MOS transistor of each of the transfer gates 146.sub.22 and 146.sub.24 is connected to the output terminal of the inverter 144b.sub.2, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144c.sub.2. The input terminals of the respective transfer gates 146.sub.2j (j=1, . . . , 4) are connected to the output terminals of the transfer gates 146.sub.12j-1 through 146.sub.12j.
[0048] In the select circuit 142.sub.3, the gate of the p-channel MOS transistor of the transfer gate 146.sub.31 is connected to the output terminal of the inverter 144c.sub.3, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144b.sub.3. Also, in the select circuit 142.sub.3, the gate of the p-channel MOS transistor of the transfer gate 146.sub.32 is connected to the output terminal of the inverter 144b.sub.3, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144c.sub.3. The input terminals of the respective transfer gates 146.sub.3j (j=1, 2) are connected to the output terminals of the transfer gates 146.sub.22j-1 through 146.sub.22j.
[0049] In the select circuit 142.sub.4, the gate of the p-channel MOS transistor of the transfer gate 146.sub.41 is connected to the output terminal of the inverter 144c.sub.4, and the gate of the n-channel MOS transistor is connected to the output terminal of the inverter 144b.sub.4. The input terminal of the transfer gate 146.sub.41 is connected to the output terminals of the transfer gates 146.sub.31 and 146.sub.32, and a signal Out is output from the output terminal of the transfer gate 146.sub.41.
[0050]
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[0052] A case where a signal is sent from the logic block 120.sub.1 to the logic block 120.sub.3 in this FPGA is now described. There are several possible paths for sending this signal. However, the shortest route of any of the paths passes through the MUX circuits surrounded by dashed lines in the switch blocks 130.sub.1, 130.sub.2, and 130.sub.3, as indicated by the bold line in
[0053] To counter the problem of the delay, there has been a known technique of connecting to a basic tile located at a long distance without passing through any CMOS circuit (any MUX circuit in
[0054] However, not all the paths between logic blocks necessarily have destinations at the ends of long-distance wiring lines. Therefore, an FPGA is designed so that a connection can be established from a long-distance wiring line to a short-distance wiring line, or a connection can established from a switch block through which a long-distance wiring line passes to another long-distance wiring line. However, the area of a MUX circuit or the like greatly increases with an increase in the number of input terminals. Therefore, in a case where MUX circuits are used, connection destinations are normally limited. As can be seen from the circuit shown in
[0055] In view of this, the inventor has made intensive studies, and discovered an integrated circuit that can reduce or prevent the signal delay even when a signal is transmitted via a large number of switch blocks. This integrated circuit will be described below as an embodiment.
[0056] The following is a description of embodiments, with reference to the accompanying drawings.
First Embodiment
[0057]
[0058] The switch block 130 of the first embodiment includes a switch circuit 130A.
[0059] This switch circuit 130A includes a switch circuit 130B shown in
[0060] The switch circuit 130A receives all the signals 180a through 180e that are input to the switch block 130, and signals 185a through 185h that are transferred through all the long-distance wiring lines passing through the switch block 130.
[0061] The switch circuit 130B shown in
[0062] In this manner, all the inputs to the switch circuit 130B shown in
[0063] In this embodiment, each switch element circuit 140 has a two-terminal switch element.
[0064] A two-terminal switch element occupies a smaller area than a MUX circuit, and accordingly, the area occupied by the entire integrated circuit can be made smaller. Each two-terminal switch element may be a variable resistance element such as a magnetic tunnel junction (MTJ) element, a resistive random-access memory (ReRAM) element, an oxidation-reduction resistive change element, an ion-conduction resistive change element, or a phase-change element, or an anti-fuse element such as a gate oxide film breakdown transistor. In this manner, an increase in the area can be prevented.
[0065] A ReRAM element (resistive change element) has a structure in which a resistive change layer is interposed between two electrodes. As a voltage is applied between the two electrodes, the electrical resistance of the resistive change layer interposed between the two electrodes changes. A gate oxide film breakdown anti-fuse element is a MOS transistor having a gate oxide film. At least the source or the drain of the anti-fuse element serves as a first terminal, and the gate serves as a second terminal.
[0066]
[0067] The wiring lines 34.sub.1 and 34.sub.2 intersect with the wiring lines 35.sub.1 and 35.sub.2. The two-terminal switch elements 10.sub.11 through 10.sub.22 are disposed in the cross regions between the wiring lines 34.sub.1 and 34.sub.2 and the wiring lines 35.sub.1 and 35.sub.2. The first terminal of each two-terminal switch element 10, (i, j=1, 2) is connected to the wiring line 34.sub.j, and the second terminal is connected to the wiring line 35.sub.i.
[0068] Each inverter 22.sub.j (j=1, 2) receives an input signal In.sub.j at the input terminal, and the output terminal thereof is connected to the wiring line 34.sub.j. As for each cutoff transistor 26.sub.i (i=1, 2), one of the source and the drain is connected to the wiring line 35.sub.i, the other one of the source and the drain is connected to the input terminal of the inverter 28.sub.i, and the gate is subjected to a control voltage V.sub.i. An output signal Out.sub.i is output from the output terminal of each inverter 28.sub.i (i=1, 2).
[0069] In the switch circuit 130B shown in
[0070] When input signals In.sub.1 and In.sub.2 are input to the switch circuit 130B having the above configuration, signals corresponding to the resistance states of the switch elements 10.sub.11 through 10.sub.22 are output as output signals Out.sub.1 and Out.sub.2.
[0071] In a case where gate oxide film breakdown anti-fuse elements are used as the switch elements 10.sub.ij (i, j=1, 2), if the write voltage of the switch elements 10.sub.ij (i, j=1, 2) is higher than the breakdown voltage of the gate oxide films of the anti-fuse elements, the cutoff transistors 26.sub.1 and 26.sub.2 are preferably used for protecting the gate oxide films of the anti-fuse elements on which writing is not being performed. The cutoff transistors 26.sub.1 and 26.sub.2 are also used for protecting the inverters 28.sub.1 and 28.sub.2.
[0072]
[0073] One of the source and the drain (the drain, for example) of each of the transistors 20.sub.i (i=1, . . . , 4) is connected to the corresponding wiring line 35.sub.i, the other one of the source and the drain (the source, for example) is subjected to a write voltage VR.sub.i, and the gate receives a row select signal Rselect. One of the source and the drain (the drain, for example) of each of the transistors 25.sub.j (j=1, . . . , 4) is connected to the corresponding wiring line 34.sub.j, the other one of the source and the drain (the source, for example) is subjected to a voltage VC.sub.j, and the gate receives a column select signal Cselect.sub.j. Each row select signal Rselect.sub.i (i=1, . . . , 4) and each column select signal Cselect.sub.j (j=1, . . . , 4) are sent from a row select driver 260 and a column select driver 270, respectively. The write voltage VR.sub.i (i=1, . . . , 4) is a power source selected by a row write power source select circuit 280, and the write voltage VC.sub.j (j=1, . . . , 4) is a power source selected by a column write power source select circuit 290. The write inhibition voltage Vinhibit that will be described later is also given by the row write power source select circuit 280 or the column write power source select circuit 290.
[0074] Referring now to
[0075] The writing described herein is an example case where writing is performed on the switch element 10.sub.11. A voltage to put the transistor 20.sub.1 into an on-state, such as Vss, is applied as the row select signal Rselect.sub.1, and a voltage to put the transistor 25.sub.1 into an on-state, such as Vdd, is applied as the column select signal Cselect.sub.1. The write voltage VR.sub.1 is then applied to the source of the transistor 20.sub.1 in an on-state, and the voltage VC.sub.1 is applied to the source of the transistor 25.sub.1 in an on-state. This voltage VC.sub.1 is such a voltage that the voltage (=VR.sub.1VC.sub.1) to be applied between the two terminals of the switch element 10.sub.11 becomes higher than the threshold voltage for performing writing on the switch element 10.sub.11. That is, the threshold voltage is lower than VR.sub.1VC.sub.1. With this, writing on the switch element 10.sub.11 can be performed. A write inhibition voltage Vinhibit is applied to the two terminals of each of the other switch elements, to prevent wrong writing on any switch element other than the switch element on which writing is to be performed. Here, the write inhibition voltage Vinhibit satisfies the following conditions:
[0076] threshold voltage>VR.sub.1Vinhibit, and
[0077] threshold voltage>VinhibitVC.sub.1.
[0078] Since these voltages leak from the inverters 22.sub.1 through 22.sub.4 on the input side, the transistors 24.sub.1 through 24.sub.4 are necessary. At a time of writing, these transistors 24.sub.1 through 24.sub.4 are put into an off-state, and thus, are disconnected from the inverters 22.sub.1 through 22.sub.4. There is no possibility of the voltages leaking from the inverters 28.sub.1 through 28.sub.4 on the output side, because the gates of the transistors forming these inverters are connected to the wiring lines 35.sub.1 through 35.sub.4. However, in a case where the write voltages VR.sub.1 through VR.sub.4 are higher than the gate breakdown voltages of the transistors forming the above inverters, the inverters 22.sub.1 through 22.sub.4 break due to write operations.
[0079] To counter this, the cutoff transistors 26.sub.i (i=1, 2, 3, 4) are provided between the wiring lines 35.sub.i and the inverters 28.sub.i, as shown in
[0080] As described above, in the integrated circuit of the first embodiment, each switch block 130 includes a cross-point switch circuit 130A. As shown in
[0081] Referring now to
[0082]
[0083] In this embodiment, on the other hand, each switch block includes a cross-point switch circuit 130A, and a signal that is input to the switch block 130 can be output from any desired output terminal of the switch circuit 130A. Therefore, as shown in
[0084] In an integrated circuit of a first modification shown in
[0085] In
[0086] As described so far, according to the first embodiments and the modifications thereof, it is possible to provide an integrated circuit that can reduce or prevent signal delays between logic blocks.
Second Embodiment
[0087]
[0088] The MPU 320 operates in accordance with a program. The program for the MPU 320 to operate is stored beforehand into the memory 340. The memory 340 is also used as a work memory for the MPU 320 to operate. The I/F 360 communicates with an external device, under the control of the MPU 320.
[0089] The second embodiment can achieve the same effects as those of the first embodiment and the modifications thereof.
[0090] While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.