Method for producing a semiconductor module
10032743 ยท 2018-07-24
Assignee
Inventors
Cpc classification
H01L23/48
ELECTRICITY
H01L21/4853
ELECTRICITY
H01L2224/48472
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2924/13091
ELECTRICITY
H01L2924/00011
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/4903
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/00011
ELECTRICITY
H01L2924/13091
ELECTRICITY
H01L23/49861
ELECTRICITY
Y02P80/30
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L2924/00
ELECTRICITY
H01L23/053
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/48472
ELECTRICITY
International classification
H01L21/44
ELECTRICITY
H01L23/48
ELECTRICITY
H01L29/40
ELECTRICITY
H01L21/48
ELECTRICITY
Abstract
A semiconductor module is produced by providing a circuit carrier having a metallization, an electrically conductive wire and a bonding device. With the aid of the bonding device, a bonding connection is produced between the metallization and a first section of the wire. A separating location and a second section of the wire, the second section being spaced apart from the separating location, are defined on the wire. The wire is reshaped in the second section. Before or after reshaping, the wire is severed at the separating location, such that a terminal conductor of the semiconductor module is formed from a part of the wire. The terminal conductor is bonded to the metallization and having a free end at the separating location.
Claims
1. A method for producing a semiconductor module, the method comprising: providing a circuit carrier having a metallization layer, an electrically conductive wire and a bonding device; producing a bonding connection between the metallization layer and a first section of the wire at a bonding location of the first section by means of the bonding device; defining a separating location of the wire; defining a second section of the wire which is spaced apart from the separating location; reshaping the wire in the second section at a reshaping location of the second section; severing the wire at the separating location such that a terminal conductor of the semiconductor module is formed from a part of the wire, the terminal conductor being bonded to the metallization layer and having a free end at the separating location and a bonded end corresponding to the first section bonded to the metallization layer, wherein between the bonding location and the reshaping location, the wire is disposed at a first angle with respect to the metallization layer while the bonding connection is being produced, wherein between the bonding location and the reshaping location, the wire is disposed at a second angle greater than the first angle with respect to the metallization layer after being reshaped, wherein the wire has a cross-sectional area of at least 0.6 mm.sup.2 perpendicular to a direction of its course before reshaping and before the production of the bonding connection.
2. A method for producing a semiconductor module, the method comprising: providing a circuit carrier having a metallization layer; providing a terminal conductor having: a first section composed of an electrically conductive first material; a second section composed of an electrically conductive second material different than the first material, the second section being cohesively connected to the first section indirectly or directly; a first end section and a second end section opposite to the first end section, the first end section being formed by a part of the first section and the second end section being formed by a part of the second section; providing a bonding device; providing a module housing; producing a bonding connection between the metallization layer and the first section at a bonding location of the first end section by means of the bonding device in such a way that the first end section is directly connected to the metallization layer; subsequent to producing the bonding connection, bending over the second end section relative to the circuit carrier at a bending location of the second end section, wherein between the bonding location and the bending location, the terminal conductor is disposed at a first angle with respect to the metallization layer while the bonding connection is being produced, wherein between the bonding location and the bending location, the terminal conductor is disposed at a second angle greater than the first angle with respect to the metallization layer after the bending step is completed; and arranging the circuit carrier in the module housing after producing the bonding connection in such a way that the second end section projects from the module housing.
3. The method of claim 2, wherein providing the terminal conductor comprises: providing a first metal plate composed of the electrically conductive first material; providing a second metal plate composed of the second material; producing a composite by rolling the first metal plate with the second metal plate; and separating a strip, which forms the terminal conductor or from which the terminal conductor is produced before producing the bonding connection, from the composite in such a way that the strip has both a first section of the first metal plate and a second section of the second metal plate, the second section being rolled with the first section.
4. The method of claim 2, wherein the circuit carrier has a dielectric isolation carrier to which the metallization layer is applied.
5. The method of claim 4, wherein the dielectric isolation carrier has a thickness of less than or equal to 2 mm.
6. The method of claim 4, wherein the dielectric isolation carrier is a ceramic.
7. A method for producing a semiconductor module, the method comprising: providing a circuit carrier having a metallization layer, an electrically conductive wire and a bonding device; producing a bonding connection between the metallization layer and a first section of the wire at a bonding location of the first section by means of the bonding device; defining a separating location of the wire; defining a second section of the wire which is spaced apart from the separating location; reshaping the wire in the second section at a reshaping location of the second section; severing the wire at the separating location such that a terminal conductor of the semiconductor module is formed from a part of the wire, the terminal conductor being bonded to the metallization layer and having a free end at the separating location and a bonded end corresponding to the first section bonded to the metallization layer, wherein between the bonding location and the reshaping location, the wire is disposed at a first angle with respect to the metallization layer while the bonding connection is being produced, wherein between the bonding location and the reshaping location, the wire is disposed at a second angle greater than the first angle with respect to the metallization layer after being reshaped, wherein the wire has in the second section in a first direction a first minimum width before reshaping and a second minimum width after reshaping, and wherein the second minimum width is less than the first minimum width by at least 30% of the first minimum width.
8. The method of claim 7, wherein a first location of the second section, at which the second section has the second minimum width after reshaping, is spaced apart from the separating location by a distance of at least the same magnitude as the first minimum width.
9. The method of claim 7, further comprising: providing a module housing; arranging the first section in an interior of the module housing; and arranging the free end outside the module housing.
10. The method of claim 7, wherein the wire is provided on a roll and that part of the wire which still situated on the roll after separation has a further first section which is bonded to the metallization layer by means of the bonding device.
11. The method of claim 7, wherein the wire has a cross-sectional area of at least 0.6 mm.sup.2 perpendicular to a direction of its course before reshaping and before the production of the bonding connection.
12. The method of claim 7, further comprising: providing a module housing; and arranging the first section and the free end in an interior of the module housing.
13. The method of claim 7, wherein a press-fit contact according to DIN EN 60352-5 is formed by the reshaping, the method further comprising: providing a connection conductor having an opening; and producing an electrically conductive connection between the connection conductor and the terminal conductor by press-fitting the press-fit contact into the opening.
14. The method of claim 13, wherein the wire at least in the region of the second section is coated with one or more of: silver (Ag), tin (Sn), nickel (Ni), and palladium (Pd).
15. The method of claim 7, wherein the wire has in the second section in a second direction a first maximum width before reshaping, and in the second direction a second maximum width after reshaping, the second maximum width being greater than the first maximum width by at least 20% of the first minimum width.
16. The method of claim 15, wherein a second location of the second section, at which the second section has the second maximum width after reshaping, is spaced apart from the separating location by a distance corresponding at least to the second maximum width.
17. The method of claim 7, wherein the terminal conductor has after reshaping a section having a convexo-concave cross-section over its entire length.
18. The method of claim 17, wherein the entire length of the terminal conductor is at least 30% of the distance between the separating location and the circuit carrier.
Description
BRIEF DESCRIPTION OF THE FIGURES
(1) The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts. The features of the various illustrated embodiments can be combined unless they exclude each other. Embodiments are depicted in the drawings and are detailed in the description which follows.
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DETAILED DESCRIPTION
A) Producing a Semiconductor Module Comprising a Terminal Conductor by Bonding a Quasi-Continuous Wire onto a Metallization Layer of a Circuit Carrier and Subsequently Separating a Section of the Quasi-Continuous Wire
(22) A method wherein a terminal conductor for a semiconductor module is produced from a quasi-continuous wire 4 is explained below with reference to
(23) The isolation carrier 20 can be, for example, a ceramic lamina, e.g. composed of aluminum oxide (Al2O3), aluminum nitride (AlN) or zirconium oxide (ZrO2). The circuit carrier 2 can be embodied, for example, as a DCB substrate (DCB=Direct Copper Bonding), as a DAB substrate (DAB=Direct Aluminum Bonding), as an AMB substrate (AMB=Active Metal Brazing) or as an IMS substrate (IMS=Insulated Metal Substrate).
(24) The upper metallization layer 21 and/or the lower metallization layer 22 can consist of copper, e.g. completely or to the extent of at least 90% by weight (percent by weight), or of aluminum completely or to the extent of at least 90% by weight. Optionally, the upper metallization layer 21 and/or the lower metallization layer 22 can have one or a plurality of thin metallic coatings at least on its/their sides facing away from the isolation carrier 20, for example in order to improve solderability or sinterability there. Suitable materials for such metallic coatings are e.g. nickel, silver, gold, and palladium.
(25) One or a plurality of semiconductor components 1 and optionally further components can be mounted on the upper metallization layer 21. The interconnection of the upper metallization layer 21, conductor tracks and/or conductor areas 211, 212, 213 possibly formed therefrom, and also semiconductor components 1 or other components mounted on the circuit carrier 2, can be carried out for example with the aid of bonding wires 3. Flexible printed circuit boards, metallic busbar arrangements, pressure contact connections or spring contact connections can likewise be used, including in any desired combinations with one another.
(26) The upper and/or the lower metallization layer 21 and/or 22 can each have a thickness in the range of 0.05 mm to 2 mm, or of 0.25 mm to 2.5 mm. The thickness of the isolation carrier 20 can be less than or equal to 2 mm, and it can be e.g. in the range of 0.1 mm to 2 mm or in the range of 0.25 mm to 1 mm.
(27) The semiconductor components 1 can be e.g. MOSFETs, IGBTs, junction field effect transistors, thyristors, diodes or any other semiconductor components in any desired combinations.
(28) A wire 4 is used for producing a terminal conductor, said wire being provided as quasi-continuous material. The wire is expediently situated on a roll from which it can be unrolled in order to produce one or a plurality of terminal conductors.
(29) With the aid of a bonding tool 5, for example an ultrasonic wire bonder, a first section 41 of the wire 4 is bonded to the upper metallization 21, heremerely by way of exampleto the conductor track 211. Since a terminal conductor is intended to be produced from the wire 4, it must have a certain minimum stability, which can be achieved, for example, by the wire 4 provided having a large cross-sectional area. By way of example, the wire 4 provided can have a cross-sectional area of at least 0.6 mm.sup.2 before it is deformed by a bonding device 5 having a sonotrode or in some other way. The production of the bonding connection between the first section 41 and the metallization 21 gives rise to a cohesive connection between the wire 4 and the metallization 21, in the case of which the wire 4 in the first section 41 is directly connected to the metallization 21.
(30) After the wire 4 has been bonded on, it is connected to the metallization 21 in the region of the first section 41, such that its course can be brought to a desired shape with the aid of a wire guide 9 that is movable relative to the wire. Optionally, while a desired course of the wire 4 is set with the aid of the movable wire guide 9, the bonding location can be secured by means of a press-on device 11, by virtue of the press-on device 11 pressing the wire 4 in the region of the first section 41 and thus in the region of the bonding location against the conductor track 21.
(31) As is shown in
(32) In this case, the reshaping process can optionally be carried out cold (that is to say at room temperature), or hot, that is to say at a temperature with the second section 42 being heated to a temperature above the recrystallization temperature of the material of the wire 4, or semi-hot, that is to say at a temperature with the second section 42 being heated during the reshaping process to a temperature that is above 150 C. but below the recrystallization temperature of the material of the wire 4.
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(34) After the reshaping process, the wire 4, as is shown in
(35) As is evident from a comparison of
(36) Correspondingly, as is evident from a comparison of
(37) In a departure from the method described with reference to
(38) In accordance with yet another method, explained with reference to
(39) A further advantage of the invention is explained below on the basis of an example shown in
(40) In the example shown, the semiconductor module comprises a baseplate 12, on which two identically constructed and identically populated circuit carriers 2, 2 are mounted. The reference signs of identical components of the two circuit carriers 2, 2 differ merely in a prime. In order to enable a higher current to be switched by the semiconductor module, the two circuits realized on the circuit carriers 2 and 2 are electrically connected in parallel. For this purpose, the corresponding conductor tracks 211 and 211 of the metallization layers 21 and 21, respectively, are electrically conductively connected to one another with the aid of the wire 4. As is shown in
(41) After the production of the bonding connection between the further first section 41 and the conductor track 211, proceeding from the further first section 41, a terminal conductor 49 is produced in the manner explained above with reference to
(42) In principle, two or more module-internal connections with subsequent production of a terminal conductor 49 can be used for any other purposes as well as for electrically connecting in parallel two identically populated circuit carriers 2, 2. Moreover, the two first sections 41 and 41 need not necessarily be bonded onto different circuit carriers 2, 2. By way of example, the two first sections 41 and 41 can also be bonded onto different conductor tracks of the same circuit carrier or onto the same conductor track.
B) Producing a Semiconductor Module Comprising a Terminal Conductor by Bonding a Prefabricated Individual Terminal Conductor onto a Metallization Layer of a Circuit Carrier
(43) With reference to
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(45) The terminal conductor 49 additionally has a shaft 40, relative to which the end section 41 can be pre-bent by an angle that is greater than 0 and less than 90. Such a pre-bend makes it possible to prevent the shaft 40 and/or the end section 42 from making the later positioning of a bonding device 5 more difficult. The angle can be, for example, in the range of 10 to 70 or in the range of 20 to 70. In a departure therefrom, however, it is also possible, in principle, to choose a pre-bend of =90, or else to dispense with a pre-bend, which corresponds to =0.
(46) In order to bond the terminal conductor 49 onto the metallization layer 21 in the region of a later bonding location 410 of the terminal conductor 49, as is shown in
(47) After the production of this bonding connection, the second end section 42 of the terminal conductor 49 bonded onto the metallization layer 21 is bent over relative to the circuit carrier 2 by a bending angle 1 that is greater than or equal to 20 and less than or equal to 80. The bending angle 1 can also be greater than or equal to 20 and less than or equal to 70.
(48) After the production of the bonding connection and before the bending-over process, the shaft 40, as is shown in
(49) Within the meaning of the present invention, shaft 40 is understood to be a section of the terminal conductor 49 which extends along a longitudinal axis identified by g in
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(51) The holding tool 19 can be used, as shown, to accommodate the prefabricated terminal conductor 49, bring it to the bonding position, hold it during the bonding process, and perform the bending-over by the bending angle 1. Alternatively, the bending-over by the bending angle 1 can also be carried out by means of a separate bending tool.
C) Examples of Prefabricated Individual Terminal Conductors which are Provided in a Magazine
(52) As will be explained by way of example below with reference to
(53) In the examples shown in
(54) For the purpose of subsequently populating a circuit carrier 2 with one of the terminal conductors 49 provided in the magazine, for example by means of a method explained with reference to
D) Various Configurations and Arrangements of One or a Plurality of Terminal Conductors Bonded onto a Circuit Carrier
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(56) As is likewise illustrated schematically in
(57) As is shown in a modification in
(58) As is furthermore illustrated with reference to
(59) As an alternative thereto, a connection conductor 8 can also be situated within a module housing 10. In this case, firstly the second sections 42 or the second end sections 42 of the terminal conductors 49 are press-fitted into the press-fit openings 81 in the connection conductor 8 and then the module housing 10 is connected to the circuit carrier 2. Such an arrangement is shown in
(60) By connecting in parallel two, three or more of such terminal conductors 49, as shown by way of example in
(61) As has been shown above, the arrangement or mounting of the circuit carrier 2 in the module housing 10 can be carried out after the production of the bonding connection between the terminal conductor 49 and the metallization layer 21, and thus also after the population of the circuit carrier 2 with the terminal conductor. In this case, the mounting can be carried out such that the second section or the second end section 42 projects from the module housing 10 and is thus situated outside the module housing 10.
(62) If the connection conductor 8 is situated in the interior of the module housing 10 in the finished semiconductor module, the production of the electrically conductive connection between a connection conductor 8 and a terminal conductor 49 is carried out by the press-fit contact being press-fitted into the press-fit opening 81 before the mounting of the circuit carrier 2 in the module housing 10.
(63) If, otherwise, the connection conductor 8 is situated outside the module housing 10 in the finished semiconductor module, the production of the electrically conductive connection between a connection conductor 8 and a terminal conductor 49 is carried out by the press-fit contact being press-fitted into the press-fit opening 81 after the mounting of the circuit carrier 2 in the module housing 10.
(64) Provided that a second section 42 of a terminal conductor 49 is arranged outside a module housing 10, the housing 10 can have a guide channel into which the terminal conductor 49 is threaded with its second section 42 ahead when the housing 10 is placed onto the circuit carrier 2 populated with the terminal conductor 49. Such a guide channel then opens at the outer side of the housing in an opening through which the second section 42 is led, such that it is situated outside the housing 10. A fine adjustment of the terminal conductor 49 can be achieved by means of such a guide channel. Optionally, the guide channel can be widened in a funnel-shaped fashion in order to make it easier for the terminal conductor 49 to be threaded in. Moreover, the risk of the terminal conductor 49 buckling can be reduced with a guide channel. This may be relevant particularly if the terminal conductor 49 is intended to be press-fitted into a press-fit opening 81.
E) The Construction of Terminal Conductors
(65) Various examples of geometries with which a terminal conductor 49 can be equipped by means of the reshaping of the wire 4 in the second section 42 thereof or by means of the reshaping of the terminal conductor 49 in the second end section 42 thereof are shown below with reference to
(66) With reference to
(67) In accordance with a further configuration shown in
(68) Generally, in the present invention, the distance d49 is given by the distance between the free end of the terminal conductor 49 (i.e. the free end situated at the second end section 42) and the circuit carrier 2. In the configurations of the invention wherein the terminal conductor 49 is also bent over by a bending angle 1 after the bonding process, the distance d49 should be determined after the bending-over process. In all the configurations of the invention wherein the circuit carrier 2 is mounted in a module housing 10, the distance d49 is also present after the mounting of the circuit carrier 2 in the module housing 10. Generally, the distance d49 can be at least 4 mm, for example.
(69) As already explained, all of the wire bonds at which a first section or end section 41, 41 is bonded onto a constituent part of a semiconductor module can be produced by means of ultrasonic wire bonding.
(70) One advantage of a terminal conductor 49 produced according to the present invention or regarding a terminal conductor 49 is, moreover, that it can also be embodied in an integral fashion. In this case, it can optionally consist of a homogeneous material.
(71) In principle, a quasi-continuous wire 4 and a terminal conductor 49 produced therefrom or a prefabricated terminal conductor 49 can consist of an arbitrary metal. One possible metal is e.g. copper, or a copper alloy comprising a copper proportion of at least 96% by weight. A further suitable metal is silver or a silver alloy comprising a silver proportion of at least 99.5% by weight. In the case of a copper alloy, a copper wire doped with zirconium (Zr) can be used, for example.
(72) In accordance with one optional configuration of the invention, a terminal conductor 49, for example if its second section or end section 42 is intended to be press-fitted into a press-fit opening 81, in the region of the second section or end section 42, before the production of the bonding connection, or else after the production of the bonding connection and before possible reshaping, or else after possible reshaping and before press-fitting, can be coated with a layer composed of exactly one or a plurality of the materials silver (Ag), nickel (Ni), palladium (Pd) or tin (Sn). In particular, the wire 4 provided or the prefabricated terminal conductor 49 provided can already be provided with such a coating. The coating can be produced by electrodeposition, for example.
(73) Instead of a prefabricated terminal conductor 49 consisting of one piece, a prefabricated terminal conductor 49, as is shown for example in
(74) Such a terminal conductor 49 comprising two or more parts cohesively connected to one another has a first section 491 composed of an electrically conductive first material, and also a second section 492 composed of an electrically conductive second material different than the first material, a first end section 41 and a second end section 42 opposite to the first end section 41. The second section 492 is cohesively connected to the first section 491 indirectly or directly. The first end section 41 is formed by a part of the first section 491, and the second end section 42 is formed by a part of the second section 492.
(75) The production of such a terminal conductor 49 is explained below with reference to
(76) Firstly, a first metal plate 141 composed of the electrically conductive first material and a second metal plate 142 composed of the second material are provided and then rolled with one another. For this purpose, the metal plates 141 and 142 are placed against one another in a manner overlapping one another and are rolled with one another, for example between two rollers 151, 152 pressed against one another, this being shown in cross section in
(77) A plurality of strips 1401 can then be separated from the composite 140, for example by stamping or cutting, each of which strips has both a first section 491 of the first metal plate 141 and a second section 492 of the second metal plate 142, said second section being rolled with the first section 491. Each of the strips 1401 can then form a prefabricated terminal conductor 49, or a prefabricated terminal conductor 49 can be produced from each of the strips 1401.
(78) Optionally, the second section 492 can also be reshaped at its free end, thus giving rise to a second end section 42 which is embodied as a press-fit contact or as a soldering terminal, or which has a screw-on opening.
(79) Instead of the metal plates 141 and 142 being rolled with one another, they can also be cohesively connected to one another by any other connection techniques, for example welding, soft soldering, hard soldering, resistance welding or sintering. All further processing steps can be carried out in the manner as described for the rolling.
(80) In the case of sintering, for this purpose, in the overlap region of the metal plates 141 and 142, a connection medium is introduced between the metal plates 141 and 142. While the metal plates 141 and 142 are then pressed against one another, connection medium situated between them is sintered. The connection medium can be for example a paste containing a metal powder, e.g. silver or copper, and also a solvent.
(81) Likewise optionally, the terminal conductor 49 can also be pre-bent by an angle in the region of the second section 492, thus giving rise to a prefabricated terminal conductor 49 which fulfils the criteria explained above with reference to
(82) A prefabricated terminal conductor 49 explained above with reference to
(83) Further examples of such prefabricated terminal conductors 49 are shown in
(84) Moreover, the joint at which the cohesive connection between the sections 491 and 492 is situated can be arranged either at the same side of the first section 491 at which the later bonding location 410 is also situated (
(85) Furthermore, the terminal conductor 49, in the region of the first section 491, as already explained, can have a pre-bend by an angle 0<90, this being shown in
(86) With a terminal conductor composed of two or more parts of different materials, what can be achieved, for example, is that the terminal conductor 49 predominantly has a low electrical resistance, e.g. by virtue of the first material having an electrical resistivity of less than 19E-05 ohms.Math.cm or of less than 17*E-05 ohms.Math.cm. By way of example, high-purity copper (Cu) or copper having small impurities is suitable as suitable material for the first section 491. Independently thereof, by way of example, Cu having small additives which bring about a higher stiffness, e.g. CuZr or CuFe2P, is suitable as material for the second section 492, with the proviso that the sections 491 and 492 consist of different materials.
(87) Independently thereof, what can be achieved is that the terminal conductor 49 has a good bondability for bonding onto the metallization layer 21, which can be achieved for example by means of a coating with high-purity Cu or Cu having small impurities (see conductivities above). In addition, what can be achieved is that the terminal conductor 49, if its second end section 42 has a press-fit contact, has a high mechanical stability, for example by the press-fit zone 42 being produced from Cu having small impurities which lead to a higher stiffness and hardness (e.g. CuZr, CuFe2P).
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(89) Within the meaning of the present invention, a prefabricated terminal conductor 49 is understood to be, in particular, such terminal conductors 49 which, in the region of the second end section 42 at which an electrical connection of the finished semiconductor module is produced, are no longer altered geometrically after the terminal conductor has been bonded onto the metallization layer 21.
(90) Insofar as one of the terminal conductors 49 explained above is intended to be press-fitted into a press-fit opening 81 and is accordingly intended to be equipped with a press-fit contact, the press-fit contact, the associated press-fit opening 81 and the production of a press-fit connection can optionally be configured and carried out according to DIN EN 60352-5, version as of April 2004.
(91) Terms such as first, second, and the like, are used to describe various elements, regions, sections, etc. and are also not intended to be limiting. Like terms refer to like elements throughout the description.
(92) As used herein, the terms having, containing, including, comprising and the like are open ended terms that indicate the presence of stated elements or features, but do not preclude additional elements or features. The articles a, an and the are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.
(93) It is to be understood that the features of the various embodiments described herein may be combined with each other, unless specifically noted otherwise.
(94) Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.