Plating method, plating system and storage medium

Abstract

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

Claims

1. A plating method of performing a plating process on a substrate, the plating method comprising: a substrate preparing process of preparing the substrate; an adhesion layer forming process of forming an adhesion layer by adsorbing a coupling agent onto the substrate; a catalyst adsorption layer forming process of forming a catalyst adsorption layer by adsorbing a catalyst onto the adhesion layer; and a diffusion barrier film forming process of forming a diffusion barrier film, as a plating layer stacked body, onto the catalyst adsorption layer; wherein the diffusion barrier film forming process comprises: a first plating layer forming process of forming a first plating layer on the catalyst adsorption layer by performing a plating process on the substrate; a first plating layer baking process of baking the first plating layer by heating the substrate to enhance bond between metals within the first plating layer; a second plating layer forming process of forming a second plating layer on the first plating layer by performing a plating process on the substrate; and a second plating layer baking process of baking the second plating layer by heating the substrate to enhance bond between metals within the second plating layer, wherein the first plating layer and the second plating layer form the plating layer stacked body, and the plating layer stacked body functions as the diffusion barrier film, a thickness of the first plating layer is set to be smaller than a thickness of the second plating layer to enhance an adhesivity between the first and second plating layers and the catalyst adsorption layer, and a baking temperature for the first plating layer is set to be higher than a baking temperature for the second plating layer, and a baking time for the first plating layer is set to be longer than a baking time for the second plating layer.

2. The plating method of claim 1, wherein each of the plating layers of the plating layer stacked body functions as a Cu diffusion barrier film.

3. The plating method of claim 1, wherein the first plating layer of the plating layer stacked body is formed on the catalyst adsorption layer, and the second plating layer of the plating layer stacked body is formed on the first plating layer through a autocatalytic plating.

4. The plating method of claim 1, wherein a component of the plating liquid in the first plating layer forming process is the same as in the second plating layer forming process.

5. The plating method of claim 1, wherein a component and a temperature of the plating liquid in the first plating layer forming process are different from those in the second plating layer forming process.

6. The plating method of claim 1, wherein the plating layer baking process is performed under an inert-gas atmosphere or a vacuum.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a block diagram illustrating a plating system in accordance with an example embodiment.

(2) FIG. 2 is a flowchart for describing a plating method in accordance with the example embodiment.

(3) FIG. 3A to FIG. 3F are diagrams illustrating a substrate on which the plating method of the example embodiment is performed.

(4) FIG. 4 is a cross sectional view illustrating a plating layer stacked body as a Cu diffusion barrier film.

(5) FIG. 5 is a side cross sectional view illustrating a plating layer forming unit.

(6) FIG. 6 is a plane view illustrating the plating layer forming unit.

(7) FIG. 7 is a side cross sectional view illustrating a plating layer baking unit.

(8) FIG. 8 is a cross sectional view showing a plating layer stacked body as a seed film, which is illustrated as a modification example of the example embodiment.

DETAILED DESCRIPTION

(9) Plating System

(10) Referring to FIG. 1 to FIG. 7, an example embodiment will be described.

(11) First, a plating system in accordance with the example embodiment will be elaborated with reference to FIG. 1.

(12) As depicted in FIG. 1, the plating system 10 is configured to perform a plating process on a substrate (silicon substrate) 2, such as a semiconductor wafer, having a recess 2a.

(13) The plating system 10 includes a cassette station 18 configured to mount thereon a cassette (not shown) which accommodates the substrate 2; a substrate transfer arm 11 configured to take out the substrate 2 from the cassette on the cassette station 18 and transfer the substrate 2; and a moving path 11a along which the substrate transfer arm 11 is moved.

(14) Arranged at one side of the moving path 11a are an adhesion layer forming unit 12 configured to form an adhesion layer 21 to be described later by adsorbing a coupling agent such as a silane coupling agent onto the substrate 2; a catalyst adsorption layer forming unit 13 configured to form a catalyst adsorption layer 22 to be described later by adsorbing a catalyst onto the adhesion layer 21 of the substrate; and a plating layer forming unit 14 configured to form plating layers 23a and 23b serving as a Cu diffusion barrier film (barrier film) to be described later on the catalyst adsorption layer 22 of the substrate 2.

(15) Further, arranged at the other side of the moving path 11a are a plating layer baking unit 15 configured to bake the plating layers 23a and 23b formed on the substrate 2; and an electroless Cu plating layer forming unit 16 configured to form an electroless copper (Cu) plating layer 24, serving as a seed film to be described later, on the plating layers 23a and 23b formed on the substrate 2.

(16) Further, an electrolytic Cu plating layer forming unit 17 configured to fill the recess 2a of the substrate 2 with an electrolytic Cu plating layer 25 while using the electroless Cu plating layer 24 as a seed film is provided adjacent to the plating layer baking unit 15.

(17) After the first plating layer 23a is formed in the plating layer forming unit 14, the first plating layer 23a is baked in the plating layer baking unit 15. Then, in the plating layer forming unit 14, the second plating layer 23b is formed on top of the baked first plating layer 23a, and the second plating layer 23b is then baked in the plating layer baking unit 15.

(18) Through these processes, the plating layer stacked body 23 in which the first plating layer 23a and the second plating layer 23b are stacked is formed on the catalyst adsorption layer 22 of the substrate 2.

(19) Each of the first plating layer 23a and the second plating layer 23b of the plating layer stacked body 23 having the above-described structure serves as a Cu diffusion barrier film (barrier film).

(20) Further, the respective constituent components of the above-described plating system, for example, the cassette station 18, the substrate transfer arm 11, the adhesion layer forming unit 12, the catalyst adsorption layer forming unit 13, the plating layer forming unit 14, the plating layer baking unit 15, the electroless Cu plating layer forming unit 16 and the electrolytic Cu plating layer forming unit 17 are controlled by a controller 19 according to various types of programs recorded in a storage medium 19A provided in the controller 19, so that various processes are performed on the substrate 2. Here, the storage medium 19A stores thereon various kinds of setup data or various kinds of programs such as a plating method to be described later. The storage medium 19A may be implemented by a computer-readable memory such as a ROM or a RAM, or a disk-type storage medium such as a hard disk, a CD-ROM, a DVD-ROM or a flexible disk, as commonly known in the art.

(21) Below, the plating layer forming unit 14 and the plating layer baking unit 15 configured to form the first plating layer 23a and the second plating layer 23b, which serve as the Cu diffusion barrier film (barrier film), and the electroless Cu plating layer forming unit 16 will be further elaborated.

(22) Among these, each of the plating layer forming unit 14 and the electroless Cu plating layer forming unit 16 may be implemented by a plating apparatus as illustrated in FIG. 5 and FIG. 6.

(23) These plating apparatuses 14 and 16 are as depicted in FIG. 5 and FIG. 6.

(24) That is, each of the plating apparatuses 14 and 16 includes, as shown in FIG. 5 and FIG. 6, a substrate holding/rotating device (substrate accommodating unit) 110 configured to hold and rotate the substrate 2 within a casing 101; liquid supplying devices 30 and 90 configured to supply a plating liquid, a cleaning liquid or the like onto a surface of the substrate 2; a cup 105 configured to collect the plating liquid, the cleaning liquid or the like dispersed from the substrate 2; draining openings 124, 129 and 134 configured to drain the plating liquid or the cleaning liquid collected by the cup 105; liquid draining devices 120, 125 and 130 configured to drain the liquids collected in the draining openings; and a controller 160 configured to control the substrate holding/rotating device 110, the liquid supplying devices 30 and 90, the cup 105 and the liquid draining devices 120, 125 and 130.

(25) (Substrate Holding/Rotating Device)

(26) The substrate holding/rotating device 110 includes, as illustrated in FIG. 5 and FIG. 6, a hollow cylindrical rotation shaft 111 vertically extended within the casing 101; a turntable 112 provided on an upper end portion of the rotation shaft 111; a wafer chuck 113 disposed on a peripheral portion of a top surface of the turntable 112 to support the substrate 2; and a rotating device 162 configured to rotate the rotation shaft 111. The rotating device 162 is controlled by the controller 160, and the rotation shaft 111 is rotated by the rotating device 162. As a result, the substrate 2 supported on the wafer chuck 113 is rotated.

(27) (Liquid Supplying Device)

(28) Now, the liquid supplying devices 30 and 90 configured to supply a plating liquid, a cleaning liquid, or the like onto the surface of the substrate 2 will be explained with reference to FIG. 5 and FIG. 6. The liquid supplying device 30 is a plating liquid supplying device configured to supply a plating liquid for performing a plating process on the surface of the substrate 2. The liquid supplying device 90 is a cleaning liquid supplying device configured to supply a cleaning liquid onto the surface of the substrate 2.

(29) As depicted in FIG. 5 and FIG. 6, a discharge nozzle 32 is provided at a nozzle head 104. The nozzle head 104 is provided at a leading end portion of an arm 103. The arm 103 is provided at a supporting shaft 102 rotated by a rotating device 165 to be moved in a vertical direction. A plating liquid supplying line of the plating liquid supplying device 30 is embedded within the arm 103. With this configuration, it is possible to discharge the plating liquid onto a target position on the surface of the substrate 2 through the discharge nozzle 32 from a required supply height.

(30) (Cleaning Liquid Supplying Device 90)

(31) The cleaning liquid supplying device 90 is configured to perform a cleaning process on the substrate 2 as will be described later. As illustrated in FIG. 5, the cleaning liquid supplying device 90 includes a nozzle 92 provided at the nozzle head 104. In this configuration, either a cleaning liquid or a rinse liquid is selectively discharged onto the surface of the substrate 2 from the nozzle 92.

(32) (Liquid Draining Device)

(33) Now, the liquid draining devices 120, 125 and 130 configured to drain out the plating liquid or the cleaning liquid dispersed from the substrate 2 will be elaborated with reference to FIG. 5. As shown in FIG. 5, the cup 105, which can be moved up and down by an elevating device 164 and has the draining openings 124, 129 and 134, is disposed within the casing 101. The liquid draining devices 120, 125 and 130 are configured to drain out the liquids collected in the draining openings 124, 129 and 134, respectively.

(34) As depicted in FIG. 5, the plating liquid draining devices 120 and 125 include collecting flow paths 122 and 127 and waste flow paths 123 and 128, which are switched by flow path switching devices 121 and 126, respectively. Here, the plating liquid is collected and reused through the collecting flow paths 122 and 127, while the plating liquid is drained out through the waste flow paths 123 and 128. Further, as shown in FIG. 5, the processing liquid draining device 130 is only equipped with a waste flow path 133.

(35) Further, as depicted in FIG. 5 and FIG. 6, the collecting flow path 122 of the plating liquid draining device 120 configured to drain the plating liquid is connected to an outlet side of the substrate accommodating unit 110, and a cooling buffer 120A configured to cool the plating liquid is provided at a portion of the collecting flow path 122 in the vicinity of the outlet side of the substrate accommodating unit 110.

(36) Now, the plating layer baking unit 15 will be elaborated.

(37) The plating layer baking unit 15 includes, as illustrated in FIG. 7, an airtightly sealed casing 15a; and a hot plate 15A provided within the airtightly sealed casing 15a.

(38) The airtightly sealed casing 15a of the plating layer baking unit 15 is provided with a transfer opening (not shown) through which the substrate 2 is transferred. An N.sub.2 gas is supplied into the airtightly sealed casing 15a through an N.sub.2 gas supply opening 15c.

(39) Concurrently, the inside of the airtightly sealed casing 15a is evacuated through an exhaust opening 15b, and by supplying the N.sub.2 gas into the airtightly sealed casing 15a, the inside of the airtightly sealed casing 15a can be maintained under an inert gas atmosphere.

(40) An operation of the example embodiment having the above-described configuration will be explained with reference to FIG. 2 to FIG. 3F.

(41) First, in a pre-process, a recess 2a is formed on a substrate (silicon substrate) 2 such as a semiconductor wafer or the like. The substrate 2 having thereon the recess 2a is then transferred into the plating system 10 in accordance with the example embodiment.

(42) Within the adhesion layer forming unit 12 of the plating system 10, an adhesion layer 21 is formed on the substrate 2 having the recess 2a (FIG. 2 and FIG. 3A).

(43) Here, as a method of forming the recess 2a on the substrate 2, a commonly known method in the art may be appropriately employed. Specifically, as a dry etching technique, for example, a general-purpose technique using a fluorine-based gas or a chlorine-based gas may be employed. Especially, in order to form a hole having a high aspect ratio (a hole depth/a hole diameter), a method using an ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) technique, which can perform a deep etching process with a high speed, may be more appropriately adopted. Especially, a Bosch process in which an etching process using sulfur hexafluoride (SF.sub.6) and a protection process using a teflon-based gas such as C.sub.4F.sub.8 are repeatedly performed may be appropriately utilized.

(44) Further, the adhesion layer forming unit 12 has a decompression chamber (not shown) equipped with a heating unit. Within the adhesion layer forming unit 12, a coupling agent such as a silane coupling agent is adsorbed onto the substrate 2 having the recess 2a, so that the adhesion layer 21 is formed on the substrate 2 (SAM process). The adhesion layer 21 formed by adsorbing the silane coupling agent is configured to improve adhesivity between the substrate 2 and a catalyst adsorption layer 22 to be described later.

(45) The substrate 2 on which the adhesion layer 21 is formed in the adhesion layer forming unit 12 is then transferred into the catalyst adsorption layer forming unit 13 by the substrate transfer arm 11. In the catalyst adsorption layer forming unit 13, Pd ions that may serve as a catalyst are adsorbed on the adhesion layer 21 of the substrate 2, so that the catalyst adsorption layer 22 is formed (FIG. 3B).

(46) As the catalyst adsorbing process, a process of discharging an aqueous solution of palladium chloride through a nozzle and adsorbing Pd ions serving as the catalyst onto the surface of the substrate 2 may be employed. To elaborate, tin ions are adsorbed onto the surface of the substrate 2 by discharging a stannous chloride solution onto the substrate 2, and, then, by discharging the palladium chloride solution onto the surface 2 to replace the tin ions, the Pd ions are adsorbed onto the substrate 2. Then, by discharging sodium hydroxide onto the substrate 2, the tin ions remaining on the substrate 2 are removed.

(47) After the catalyst adsorption layer 22 is formed on the substrate 2 in the catalyst adsorption layer forming unit 13 as stated above, the substrate 2 is then transferred into the plating layer forming unit 14 by the substrate transfer arm 11.

(48) Subsequently, in the plating layer forming unit 14, a first plating layer 23a serving as a Cu diffusion barrier film (barrier film) is formed on the catalyst adsorption layer 22 of the substrate 2 (FIG. 3C and FIG. 4).

(49) In this case, the plating layer forming unit 14 is implemented by the plating apparatus as illustrated in FIG. 5 and FIG. 6. The first plating layer 23a can be formed by performing an electroless plating process on the catalyst adsorption layer 22 of the substrate 2.

(50) When forming the first plating layer in the plating layer forming unit 14, a plating liquid containing, for example, CoWB may be used, and a temperature of the plating liquid is maintained at 40 C. to 75 C. (desirably, 65 C.).

(51) By supplying the plating liquid containing the CoWB onto the substrate 2, the first plating layer 23a containing the CoWB is formed on the catalyst adsorption layer 22 of the substrate 2 through the electroless plating process.

(52) Thereafter, the substrate 2 in which the first plating layer 23a is formed on the catalyst adsorption layer 22 is transferred from the plating layer forming unit 14 into the airtightly sealed casing 15a of the plating layer baking unit 15 by the substrate transfer arm 11. Within the airtightly sealed casing 15a of the plating layer baking unit 15, the substrate 2 is heated on the hot plate 15A under an inert gas atmosphere of N.sub.2 gas in order to suppress the substrate 2 from being oxidized. Accordingly, the first plating layer 23a of the substrate 2 is baked (baking process).

(53) When baking the first plating layer 23a in the plating layer baking unit 15, a baking temperature may be set to be in the range from, e.g., 150 C. to 200 C., and a baking time is set to be in the range from, e.g., 10 minutes to 30 minutes.

(54) By baking the first plating layer 23a on the substrate 2 as described above, moisture within the first plating layer 23a can be removed, and, at the same time, the bond between metals within the first plating layer 23a can be enhanced. The substrate 2 heated in the plating layer baking unit 15 is delivered back to the plating layer forming unit 14 by the substrate transfer arm 11. Then, within the plating layer forming unit 14, an electroless plating process is performed on the substrate 2. Accordingly, the second plating layer 23b is formed on the first plating layer 23a through the autocatalytic plating.

(55) When forming the second plating layer 23b on the first plating layer 23a, a plating liquid containing CoWB may be used, as in the case of forming the first plating layer 23a. A temperature of the plating liquid is maintained at 40 C. to 75 C. (desirably, 65 C.), as in the case of forming the first plating layer 23a.

(56) Alternatively, when forming the second plating layer 23b in the plating layer forming unit 14, unlike when forming the first plating layer 23a, a plating liquid containing CoWP may be used instead of the plating liquid containing the CoWB, and a temperature of the plating liquid may be in the range from, e.g., 40 C. to 80 C., desirably, 70 C.

(57) In any cases, when forming the second plating layer 23b, a plating liquid containing the same metals (CoW) as the first plating layer 23a is used, and the second plating layer 23b formed as described above serves as a Cu diffusion barrier film (barrier film).

(58) Further, in the above, though the plating liquids containing the CoW are used when forming the first plating layer 23a and the second plating layer 23b, the example embodiment may not be limited thereto. By way of example, a plating liquid containing Co may be used to form the first plating layer 23a, while using a plating liquid containing CoW to form the second plating layer 23b. Alternatively, a plating liquid containing CoW may be used to form the first plating layer 23a, while using a plating liquid containing Co to form the second plating layer 23b. A combination of a plating liquid for forming the first plating layer 23a and a plating liquid for forming the plating liquid for forming the second plating layer 23b can be selected among any of plating liquids containing cobalt-based materials, e.g., a CoP containing plating liquid, a CoB containing plating liquid, a CoW containing liquid, a CoWP containing plating liquid, a CoWB containing plating liquid, and so forth.

(59) Subsequently, the substrate 2 on which the second plating layer 23b is formed in the plating layer forming unit 14 is delivered back to the plating layer baking unit 15 from the plating layer forming unit 14 by the substrate transfer arm 11. The substrate 2 is heated on the hot plate 15A within the airtightly sealed casing 15a of the plating layer baking unit 15, so that the second plating layer 23b is baked.

(60) A baking temperature and a baking time for baking the second plating layer 23b are set to be the substantially same as the baking temperature and the baking time for baking the first plating layer 23a. However, the baking temperature and the baking time for the second plating layer 23b may be set to be different from the baking temperature and the baking time for the first plating layer 23a. By baking the second plating layer 23b on the substrate 2, moisture within the second plating layer 23b can be removed, and, at the same time, the bond between metals within the second plating layer 23b can be enhanced.

(61) Through the above-described processes, it is possible to obtain a plating layer stacked body 23 having the first plating layers 23a and the second plating layer 23b and serving as a Cu diffusion barrier film (barrier film).

(62) In general, although the bonds between the metals in the first plating layer 23a and the second plating layer 23b can be enhanced by baking the plating layers 23a and 23b, if the thicknesses of the baked plating layers are large, a stress accompanied by deformation of the plating layers may be generated between an underlying layer and the plating layers.

(63) In accordance with the present example embodiment, however, the plating layer stacked body 23 serving as the barrier film is formed of the first plating layer 23a obtained by the first plating layer forming process and the first plating layer baking process and the second plating layer 23b obtained by the second plating layer forming process and the second plating layer baking process. Thus, the thickness of the plating layer baked in the first baking process or in the second baking process can be made small, as compared to the entire thickness of the plating layer stacked body 23.

(64) Accordingly, when baking the respective plating layers 23a and 23b, a stress generated between these layers and the underlying layer (for example, the catalyst adsorption layer 22) can be decreased, so that adhesivity between the plating layers 23a and 23b and the underlying layer can be increased.

(65) Further, in order to enhance the adhesivity between the plating layers 23a and 23b and the underlying layer 22 by reducing the stress generated therebetween, it may be desirable to set the thickness of the first plating layer 23a to be smaller than the thickness of the second plating layer 23b. Further, in the baking processes of the plating layers 23a and 23b, it is desirable to remove moisture sufficiently by setting the baking temperature for the first plating layer 23a to be higher than the baking temperature for the second plating layer 23b or by setting the baking times for the first plating layer 23a to be longer than the baking times for the second plating layer 23b.

(66) Further, the plating layer stacked body 23 may not be limited to the structure including the first plating layer 23a and the second plating layer 23b. For example, the plating layer stacked body 23 may include a third plating layer and a fourth plating layer in addition to the first plating layer 23a and the second plating layer 23b.

(67) The substrate 2 having the plating layer stacked body 23 serving as the barrier film is then sent to the electroless Cu plating layer forming unit 16 by the substrate transfer arm 11.

(68) Subsequently, in the electroless Cu plating layer forming unit 16, an electroless Cu plating layer 24 serving as a seed film for forming an electrolytic Cu plating layer 25 is formed on the plating layer stacked body 23 of the substrate 2 (FIG. 3D).

(69) Here, the electroless Cu plating layer forming unit 16 is implemented by the plating apparatus as illustrated in FIG. 5 and FIG. 6. By performing the electroless plating process on the plating layer stacked body 23 of the substrate 2, the electroless Cu plating layer 24 can be formed.

(70) The electroless Cu plating layer 24 formed in the electroless Cu plating layer forming unit 16 serves as the seed film for forming the electrolytic Cu plating layer 25. A plating liquid used in the electroless Cu plating layer forming unit 16 may contain a copper salt as a source of copper ions, such as copper sulfate, copper nitrate, copper chloride, copper bromide, copper oxide, copper hydroxide, copper pyrophosphate, or the like. The plating liquid may further contain a reducing agent and a complexing agent for the copper ions. Further, the plating liquid may further contain various kinds of additives for improving stability or speed of the plating reaction.

(71) The substrate 2 on which the electroless Cu plating layer 24 is formed as described above is then sent to the electrolytic Cu plating layer forming unit 17 by the substrate transfer arm 11. Here, the substrate 2 on which the electroless Cu plating layer 24 is formed may be sent to the electrolytic Cu plating layer forming unit 17 after baked in the baking unit 15. Subsequently, an electrolytic Cu plating process is performed on the substrate 2 within the electrolytic Cu plating layer forming unit 17, so that the electrolytic Cu plating layer 25 is buried within the recess 2a of the substrate 2 while using the electroless Cu plating layer 24 as the seed film (FIG. 3E).

(72) Thereafter, the substrate 2 is unloaded from the plating system 10, and a rear surface side of the substrate 2 (opposite side to the side where the recess 2a is formed) is polished chemically and mechanically (FIG. 3F).

(73) In accordance with the present example embodiment as stated above, the plating layer stacked body 23 serving as the barrier film is formed of the first plating layer 23a obtained by the first plating layer forming process and the first plating layer baking process and the second plating layer 23b obtained by the second plating layer forming process and the second plating layer baking process. Accordingly, a stress between these plating layers and the underlying layer generated when baking the plating layers 23a and 23b can be reduced, so that adhesivity between the plating layers and the underlying layer can be enhanced.

Modification Examples

(74) Now, modification examples of the example embodiment will be explained. In the above-described example embodiment, the plating layer stacked body 23 serving as the Cu diffusion barrier film (barrier film) is formed of the first plating layer 23a and the second plating layer 23b. However, the example embodiment may not be limited thereto, and the electroless Cu plating layer 24 serving as the seed film may be formed of a plating layer stacked body 23 having a first plating layer 24a and a second plating layer 24b (FIG. 8).

(75) In such a case, the first plating layer 24a of the electroless Cu plating layer 24 is formed through a first plating layer forming process in the electroless Cu plating layer forming unit 16, and, then, baked through a first plating layer baking process in the plating layer baking unit 15. Further, the second plating layer 24b is formed through a second plating layer forming process in the electroless Cu plating layer forming unit 16 and, then, baked through a second plating layer baking process in the plating layer baking unit 15. Accordingly, the plating layer stacked body 24 having the first plating layer 24a and the second plating layer 24b and serving as the seed film for the electrolytic Cu plating layer 25 is obtained.

(76) Further, the above-described example embodiment has been described for the case of burying the electrolytic Cu plating layer through the electrolytic Cu plating process. However, the example embodiment may not be limited thereto, and it may be possible to form the Cu plating layer through the electroless Cu plating process instead of the electrolytic Cu plating process.

(77) Additionally, in the above-described example embodiment, when baking the first plating layer 23a and the second plating layer 23b, the substrate 2 is heated on the hot plate 15A under the inert-gas atmosphere of N.sub.2 gas within the airtightly sealed casing 15a of the plating layer baking unit 15. However, the example embodiment may not be limited thereto, and the substrate 2 may be heated on the hot plate 15A after evacuating the inside of the airtightly sealed casing 15a to a vacuum level, for in order to lower the temperature or shorten the processing time.

(78) Furthermore, in the above-described example embodiment, the plating layer forming unit 14 and the plating baking unit 15 are configured as separate apparatuses. However, the example embodiment may not be limited thereto. By way of example, by providing a heating source such as a lamp irradiator 200 (UV light or the like) above the substrate 2 or a hot plate (not shown) covering the substrate 2 in the plating layer forming unit 14 shown in FIG. 5, it may be possible to bake the plating layers within the plating layer forming unit 14.

EXPLANATION OF CODES

(79) 2: Substrate 2a: Recess 10: Plating system 11: Substrate transfer arm 12: Adhesion layer forming unit 13: Catalyst adsorption layer forming unit 14: Plating layer forming unit 15: Plating layer baking unit 15A: Hot plate 15a: Airtightly sealed casing 15b: Exhaust opening 15c: N.sub.2 gas supply opening 16: Electroless Cu plating layer forming unit 17: Electrolytic Cu plating layer forming unit 18: Cassette station 19: Controller 19A: Storage medium 21: Adhesion layer 22: Catalyst adsorption layer 23: Plating layer stacked body 23a: First plating layer 23b: Second plating layer 24: Electroless Cu plating layer 25: Electrolytic Cu plating layer