Method to taylor mechanical properties on MEMS devices and nano-devices with multiple layer photoimageable dry film

Abstract

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first photoresist layer derived from a photoresist resin having a first chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density and (b) at least a second photoresist layer derived from a photoresist resin having a second chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first chemical property. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material and the composite photoresist material has varying mechanical and/or physical properties through a thickness of the 3D structure.

Claims

1. A three-dimensional (3D) structure comprising a composite photoresist material that includes: (a) a first photoresist layer derived from a photoresist resin having a first chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density and (b) at least a second photoresist layer derived from a photoresist resin having a second chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density, wherein the second chemical property is different from the first chemical property and wherein the composite photoresist material has varying mechanical and/or physical properties through a thickness of the 3D structure.

2. The 3D structure of claim 1, wherein a composite photoresist material comprises at least a third layer of photoresist material derived from a photoresist resin having a third chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first and second chemical properties.

3. The 3D structure of claim 1, wherein the composite photoresist material has a thickness ranging from about 6 to about 150 m.

4. The 3D structure of claim 1, wherein each photoresist layer of the composite photoresist material is imaged with a radiation exposure wavelength selected from the group consisting of e-line, g-line, h-line, i-line, mid ultraviolet (UV), and deep UV radiation.

5. The 3D structure of claim 1, wherein each photoresist layer of the composite photoresist material is imaged with a different radiation exposure wavelength selected from the group consisting of e-line, g-line, h-line, i-line, mid ultraviolet (UV), and deep UV radiation.

6. The 3D structure of claim 1, wherein one or more layers of the composite photoresist material comprises a hydrophobicity agent.

7. A method for making a three-dimensional (3D) structure from a composite photoresist film comprising the steps of: (A) applying a first layer of photoresist material to a carrier film, the first layer being derived from a photoresist resin having a first chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density; (B) drying the first layer to provide a dried first layer; (C) applying a second layer of photoresist material to the dried first layer, the second layer being derived from a photoresist resin having a second chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first chemical property; (D) drying the second layer to provide a composite photoresist material devoid of intermediate adhesion layer(s); (E) applying an adhesion layer to a substrate surface; (F) laminating the composite photoresist material to the adhesion layer; (G) exposing the composite photoresist material to a radiation exposure wavelength selected from the group consisting of e-line, g-line, h-line, i-line, mid ultraviolet (UV), and deep UV radiation; and (H) simultaneously developing the composite photoresist material to provide the 3D structure having varying physical and/or mechanical properties through a thickness thereof.

8. The method of claim 7, further comprising applying a third layer of photoresist material to a dried second layer to provide the composite photoresist material, wherein the third layer of photoresist material is derived from a photoresist resin having a third chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first and second chemical properties.

9. The method of claim 7, wherein the composite photoresist material has a thickness ranging from about 6 to about 150 m.

10. The method of claim 7, wherein each photoresist layer of the composite photoresist material is exposed to a different radiation exposure selected from the group consisting of e-line, g-line, h-line, i-line, mid ultraviolet (UV), and deep UV radiation.

11. The method of claim 7, wherein one or more layers of the composite photoresist material comprises a hydrophobicity agent.

12. A fluid ejection device having a fluid ejection head comprising: a semiconductor substrate containing a plurality fluid ejection actuators on a device surface thereof and one or more fluid supply vias etched therethrough; an adhesion promotion layer applied to the device surface of the semiconductor substrate; a composite photoresist material applied to the adhesion promotion layer wherein the composite photoresist material comprises (a) a first photoresist layer derived from a photoresist resin having a first chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density and (b) at least a second photoresist layer derived from a photoresist resin having a second chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first chemical property, wherein the composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material; and a controller for activating the fluid ejection head.

13. The fluid ejection device of claim 12, wherein a composite photoresist material comprises at least a third layer of photoresist material derived from a photoresist resin having a third chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first and second chemical properties.

14. The fluid ejection device of claim 12, wherein the composite photoresist material has a thickness ranging from about 6 to about 150 m.

15. The fluid ejection device of claim 12, wherein each photoresist layer of the composite photoresist material is imaged with a radiation exposure wavelength selected from a group consisting of e-line, g-line, h-line, i-line, mid ultraviolet (UV), and deep UV radiation.

16. The fluid ejection device of claim 12, wherein each photoresist layer of a composite photoresist material is imaged with a different radiation exposure wavelength selected from the group consisting of e-line, g-line, h-line, i-line, mid ultraviolet (UV), and deep UV radiation.

17. The fluid ejection device of claim 12, wherein one or more layers of the composite photoresist material comprises a hydrophobicity agent.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Further features and advantages of the disclosed embodiments will become apparent by reference to the detailed description when considered in conjunction with the figures, which are not to scale, wherein like reference numbers indicate like elements through the several views, and wherein:

(2) FIGS. 1-2 are flow diagrams of prior art processing steps for making a fluid ejection head;

(3) FIG. 3 is a flow diagram of process steps for making an ejection head according to an embodiment of the disclosure;

(4) FIG. 4A is a schematic cross-sectional view, not to scale of a portion of a fluid ejection head according to the disclosure;

(5) FIG. 4B is a plan schematic view, not to scale, of a portion of the fluid ejection head of FIG. 4A;

(6) FIG. 5 is a cross-sectional view, not to scale, of a double-layer photoresist material according to an embodiment of the disclosure;

(7) FIGS. 6-8 are schematic views, not to scale, of steps for making a fluid ejection head according to an embodiment of the disclosure;

(8) FIG. 9 is a cross-sectional view, not to scale, of a triple-layer photoresist material according to an embodiment of the disclosure;

DETAILED DESCRIPTION OF THE EMBODIMENTS

(9) With regard to embodiments of the disclosure, various MEMS and nano-devices may be made having the desired physical and/or mechanical properties throughout a thickness of a composite polymeric layer. An example of such a device is a fluid ejection head. Accordingly, for simplification purposes, the description is directed specifically to fluid ejection heads. However, the embodiments described herein may be adapted for use in making a wide variety of 3D MEMS and nano-devices as referenced above.

(10) FIGS. 1 and 2, graphically illustrate block flow diagrams 10 and 50 of prior art process steps for making an ejection head. With reference to FIG. 1, the first step is a DRIE process 12 to etch fluid vias through a semiconductor substrate. Next, the substrate is plasma cleaned in step 14 and an adhesion promotion layer is applied to the substrate in step 16. A dry film layer that provides a fluid flow layer is applied to the adhesion layer in step 18. The fluid flow layer is exposed to radiation through a mask in step 20, and baked in step 22 to cure the exposed areas of the layer. Next the fluid flow layer is developed in step 24 to remove the masked areas of the fluid flow layer. The fluid flow layer is then exposed to ultraviolet (UV) radiation in step 26 and baked again in step 28 to remove any residual, photoacid generator, developer and/or uncured resin. The semiconductor substrate and fluid flow layer are plasma cleaned in step 30 and a second adhesion promotion layer is applied in step 32. A second dry film layer is laminated to the fluid flow layer in step 34 to provide a nozzle layer. The nozzle layer is exposed to radiation in step 36 to form nozzle holes in the nozzle layer. A second post exposure bake is performed in step 38 to cure the unmasked material in the nozzle layer in step 38. Next the nozzle layer is developed in step 40 to form the nozzle holes. The nozzle layer is exposed to UV radiation in step 42 and post exposure baked in step 44.

(11) The primary differences between flow diagram 10 and flow diagram 50 is that in flow diagram 10, the DRIE process to form vias in the semiconductor substrate is conducted before any of the flow layers are applied to the substrate, whereas in diagram 50, the DRIE process is conducted after the fluid flow layer is applied to the substrate, exposed to radiation and developed. Since the semiconductor substrate does not already contain fluid vias, the fluid flow layer may can be spin-coated onto the substrate in step 52 rather than laminated to the adhesion layer. Otherwise, the process steps are similar to those described with reference to FIG. 1.

(12) A simplified process 60 according to an embodiment of the disclosure is shown in FIG. 3. The first three steps of the process are similar to the first three steps of the prior art process 10. However, instead of laminating a single fluid flow layer to the substrate, a composite dry film layer is laminated in step 62 to the adhesion promotion layer. Next, the composite dry film layer is exposed to a first radiation source in step 64 through a mask to provide fluid flow features in the composite dry film layer. Prior to developing the fluid flow features, the composite dry film layer is exposed to a second radiation source through a second mask in step 66 to provide nozzle holes in the composite dry film layer. The composite dry film layer is then baked in step 68 to cure the masked areas of the composite dry film layer. In step 70, the composite dry film layer is developed to form fluid flow features and nozzle holes in the composite dry film layer. As in the prior art processes, the composite film layer is then exposed to UV radiation in step 72 and baked in step 74.

(13) A portion of an ejection head 100 made by the foregoing process is illustrated in FIGS. 4A and 4B. The ejection head 100 includes a semiconductor substrate 110 that is preferably a silicon semiconductor substrate 110 containing a plurality of fluid ejection actuators such as piezoelectric devices or heater resistors 112 formed on a device side 114 of the substrate 110. Upon activation of heater resistors 112, fluid supplied through one or more fluid supply vias 116 in the semiconductor substrate 110 flows through a fluid supply channel 118 to a fluid chamber 120 in a portion 122 of the composite film layer 124 where the fluid is caused to be ejected through nozzle holes 126 in the composite film layer 124. Fluid ejection actuators, such as heater resistors 112, are formed on the device side 114 of the semiconductor substrate 110 by well-known semiconductor manufacturing techniques.

(14) The semiconductor substrate 110 is relatively small in size and typically has overall dimensions ranging from about 2 to about 8 millimeters wide by about 10 to about 20 millimeters long and from about 0.4 to about 0.8 mm thick. In conventional semiconductor substrates 110, the fluid supply slots 116 are grit-blasted in the semiconductor substrates 110. Such slots 116 typically have dimensions of about 9.7 millimeters long and from about 50 to about 400 microns wide. Fluid may be provided to the fluid ejection actuators by a single one of the slots 116 or by a plurality of openings in the substrate 110 made by a dry etch process selected from reactive ion etching (RIE) or deep reactive ion etching (DRIE), inductively coupled plasma etching, and the like. The composite film layer 124 may be formed from one or more layers of negative photoresist material as described in more detail below. The composite film layer 124 may have a thickness T ranging from about 6 to about 150 m or more, such as from about 10 to about 80 m.

(15) The fluid supply slot 116 directs fluid from a fluid reservoir to which the ejection head 100 is attached through the fluid supply slot 116 to the device side 114 of the substrate 110 containing heater resistors 112. The device side 114 of the substrate 110 also preferably contains electrical tracing from the heater resistors 112 to contact pads used for connecting the substrate 110 to a flexible circuit or a tape automated bonding (TAB) circuit for supplying electrical impulses from a fluid ejection controller to activate one or more heater resistors 112 on the substrate 110.

(16) Each of the layers of the composite film layer 124 may require different physical and/or mechanical properties depending configuration of ejection head 100 or the fluid being handled by the ejection head 100. For example, the fluid chambers 120 in the portion 122 of the composite film may be exposed to higher temperatures than a portion 125 of the composite film containing the nozzle holes 126. Also, it may be desirable for the fluid supply channels 118 and fluid chambers 120 to be more hydrophilic than the nozzle holes 126 so that the fluid flow easily from the fluid supply via 116 through the fluid supply channels 118 to the fluid chambers 120. Likewise, it may be necessary for the portion 125 of the composite film to have hydrophobic properties so that fluid ejection through the nozzle holes 126 does not accumulate and dry on the portion 125 causing plugging of the nozzle holes 126. Since layer 124 may be exposed to higher fluid temperatures than portion 125 of the composite film, it may be necessary for the composite film layer 124 to have varying stress relieving properties through the thickness T of the composite film layer 124.

(17) With reference to FIG. 5, there is illustrated a composite photoresist film layer 200 attached to a carrier film 212. The composite photoresist film layer 200 includes a first layer 210 that derived from a photoresist resin having a first chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density. For example, the first layer 210 may be made from a hydrophilic resin having a low cross-linked density relative to the cross-link density of a second layer 214. The first layer also contains a first photoacid generator having at least a first radiation exposure wavelength. The wavelength of the photoacid generator in the first layer 210 may be selected from e-line, g-line, h-line, i-line, mid UV, and deep UV radiation. The first radiation exposure wavelength, in some embodiments, may be greater than 350 nm. The thickness of the first layer 210 may range from about 3 to about 50 m.

(18) The composite film layer 200 may also contain the second layer 214 that is formulated with a photoresist resin having a second chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density that is different from the first chemical property. For example, the second layer 214 may be made from a hydrophobic or hydrophilic resin having a medium cross-linked density relative to the cross-linked density of the first layer 210. The second layer 214 may contain a second photoacid generator having a second radiation exposure wavelength that is different from the first radiation exposure wavelength. The second radiation exposure wavelength may be selected from e-line, g-line, h-line, i-line, mid UV, and deep UV radiation. In some embodiments, the second radiation exposure wavelength may be less than 350 nm. The second layer 214 may have a thickness ranging from about 3 to about 100 m.

(19) The wavelengths provided by the radiations sources that may be used according to embodiments of the disclosure are as follows:

(20) e-line=546 nm

(21) g-line=435 nm

(22) h-line=405 nm

(23) i-line=365 nm

(24) mid UV=310 nm

(25) deep UV=254 nm.

(26) The photoresist materials that contain the photoacid generators may be formulated to include one or more of a multi-functional epoxy compound, a di-functional epoxy compound, a relatively high molecular weight polyhydroxy ether, an adhesion enhancer, and an aliphatic ketone solvent. For purposes of the disclosure, difunctional epoxy means epoxy compounds and materials having only two epoxy functional groups in the molecule. Multifunctional epoxy means epoxy compounds and materials having more than two epoxy functional groups in the molecule.

(27) The di-functional epoxy component may be selected from di-functional epoxy compounds which include diglycidyl ethers of bisphenol-A, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclo-hexene carboxylate, 3,4-epoxy-6-methylcyclohexylmethyl-3,4-epoxy-6-methylcyclohexene carboxylate, bis(3,4-epoxy-6-methylcyclohexylmethyl) adipate, and bis(2,3-epoxycyclopentyl) ether. Representative difunctional epoxy compounds may be selected from, but not limited to, the following compounds:

(28) Difunction Epoxy Compound 1

(29) ##STR00001##
Difunctional Epoxy Compound 2

(30) ##STR00002##
Difunctional Epoxy Compound 3

(31) ##STR00003##
Difunctional Epoxy Compound 4

(32) ##STR00004##
Difunctional Epoxy Compound 5

(33) ##STR00005##
Difunctional Epoxy Compound 6

(34) ##STR00006##

(35) An exemplary di-functional epoxy component is a bisphenol-A/epichlorohydrin epoxy resin having an epoxide equivalent weight ranging from about 170 to about 175 Daltons. An epoxide equivalent weight is the number of grams of resin containing 1 gram-equivalent of epoxide. The epoxide equivalent weight of the first di-functional epoxy component typically ranges from about 136 to about 2300 Daltons. The amount of the first di-functional epoxy component in the photoresist formulation may range from about 30 to about 50 percent by weight based on the weight of the cured resin.

(36) A suitable multifunctional epoxy component for making a photoresist formulation used for the composite film layer 200 or 240 (FIG. 9) according to one embodiment of the disclosure, may be selected from aromatic epoxides such as glycidyl ethers of polyphenols. Exemplary multifunctional epoxy compounds may be selected from, but not limited to, the following compounds:

(37) Multifunctional Epoxy Compound 1

(38) ##STR00007##
Multifunctional Epoxy Compound 2

(39) ##STR00008##
Multifunctional Epoxy Compound 3

(40) ##STR00009##
Multifunctional Epoxy Compound 4

(41) ##STR00010##
Multifunctional Epoxy Compound 5

(42) ##STR00011##
wherein n, m, and p are integers representing the number of repeat units in each of the polymers. The aromatic content in weight percent of Compounds 3-5 is calculated based on n, m and p=1.

(43) An exemplary multi-functional epoxy resin is a polyglycidyl ether of a phenolformaldehyde novolac resin such as a novolac epoxy resin having an epoxide equivalent weight ranging from about 190 to about 250 Daltons and a viscosity at 130 C. ranging from about 10 to about 60.

(44) The multi-functional epoxy component of the photoresist formulation may have a epoxide equivalent weight ranging from about 166 to about 286 Daltons as determined by gel permeation chromatography, and an average epoxide group functionality of greater than 3, preferably from about 4 to about 10. The amount of multifunctional epoxy resin in an exemplary photoresist formulation may range from about 30 to about 50 percent by weight based on the weight of the cured thick film layer 80.

(45) Exemplary photoacid generators include compounds or mixture of compounds capable of generating a cation such as an aromatic complex salt which may be selected from onium salts of a Group VA element, onium salts of a Group VIA element, and aromatic halonium salts. Aromatic complex salts, upon being exposed to ultraviolet radiation or electron beam irradiation, are capable of generating acid moieties which initiate reactions with epoxides. The photoacid generator may be present in the photoresist formulation in an amount ranging from about 5 to about 25 weight percent based on the weight of the cured resin.

(46) Compounds that generate a protic acid when irradiated by active rays, may be used as the photoacid generator, including, but are not limited to, aromatic iodonium complex salts and aromatic sulfonium complex salts. Examples include di-(t-butylphenyl)iodonium triflate, diphenyliodonium tetrakis(pentafluorophenyl)borate, diphenyliodonium hexafluorophosphate, diphenyliodonium hexafluoroantimonate, di(4-nonylphenyl)iodonium hexafluorophosphate, [4-(octyloxy)phenyl]phenyliodonium hexafluoroantimonate, triphenylsulfonium triflate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium tetrakis(pentafluorophenyl)borate, 4,4-bis[diphenylsulfonium]diphenylsulfide, bis-hexafluorophosphate, 4,4-bis[di([beta]-hydroxyethoxy)phenylsulfonium]diphenylsulfide bis-hexafluoroantimonate, 4,4-bis[di([beta]-hydroxyethoxy)(phenylsulfonium)diphenyl sulfide-bishexafluorophosphate 7-[di(p-tolyl)sulfonium]-2-isopropylthioxanthone hexafluorophosphate, 7-[di(p-tolyl)sulfonio-2-isopropylthioxanthone hexafluoroantimonate, 7-[di(p-tolyl)sulfonium]-2-isopropyl tetrakis(pentafluorophenyl)borate, phenylcarbonyl-4-diphenylsulfonium diphenylsulfide hexafluorophosphate, phenylcarbonyl-4-diphenylsulfonium diphenylsulfide hexafluoroantimonate, 4-tert-butylphenylcarbonyl-4-diphenylsulfonium diphenylsulfide hexafluorophosphate, 4-tert-butylphenylcarbonyl-4-diphenylsulfonium diphenylsulfide hexafluoroantimonate, 4-tert-butylphenylcarbonyl-4-diphenylsulfonium diphenylsulfide tetrakis(pentafluorophenyl)borate, diphenyl [4-(phenylthio)phenyl]sulfonium hexafluoroantimonate and the like.

(47) The hydrophobicity agent that may be used in one or more layers of the composite photoresist material include silicon containing materials such as silanes and siloxanes. Accordingly, the hydrophobicity agent may be selected from heptadecafluoro-decyltrimethoxysilane, octadecyldimethylchlorosilane, ocatadecyltri-cholorsilane, methytrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, t-butylmethoxysilane, tetraethoxysilane, sodium methyl siliconate, vinytri-methoxysilane, N-(3-(trimethoxylsilyl)propyl)ethylenediamine polymethylmethoxy-siloxane, polydimethylsiloxane, polyethylhydrogensiloxane, and dimethyl siloxane. The amount of hydrophobicity agent in the cured composite film may about 0.5 to about 2 weight percent, such as from about 1.0 to about 1.5 weight percent based on total weight of the cured resin, including all ranges subsumed therein.

(48) An exemplary solvent for use in the photoresist formulation is a solvent which is non-photoreactive. Non-photoreactive solvents include, but are not limited gamma-butyrolactone, C.sub.1-6 acetates, tetrahydrofuran, low molecular weight ketones, mixtures thereof and the like. The non-photoreactive solvent is present in the formulation mixture used to provide the composite film layer 124 in an amount ranging from about 20 to about 90 weight percent, such as from about 40 to about 60 weight percent, based on the total weight of the photoresist formulation. In an exemplary embodiment, the non-photoreactive solvent does not remain in the cured composite film layer and is thus removed prior to or during the composite film layer curing steps.

(49) The photoresist formulation may optionally include an effective amount of an adhesion enhancing agent such as a silane compound. Silane compounds that are compatible with the components of the photoresist formulation typically have a functional group capable of reacting with at least one member selected from the group consisting of the multifunctional epoxy compound, the difunctional epoxy compound and the photoinitiator. Such an adhesion enhancing agent may be a silane with an epoxide functional group such as 3-(guanidinyl)propyltrimethoxysilane, and a glycidoxyalkyltrialkoxysilane, e.g., gamma-glycidoxypropyltrimethoxysilane. When used, the adhesion enhancing agent can be present in an amount ranging from about 0.5 to about 2 weight percent, such as from about 1.0 to about 1.5 weight percent based on total weight of the cured resin, including all ranges subsumed therein. Adhesion enhancing agents, as used herein, are defined to mean organic materials soluble in the photoresist composition which assist the film forming and adhesion characteristics of the composite film layer 200 or 240 adjacent the device surface 114 of the substrate 110.

(50) Representative formulations for layers 210 and 214 are illustrated below in Tables 1-9. The amount of each component in the formulation is given in pounds per hundred pounds of resin (phr). All of the formulations in the following tables contained an iodonium complex salt as the photoacid generator. The phenoxy resin that was used was a compound of the formula

(51) ##STR00012##
wherein x is the number of repeat units in the polymer. The phenoxy resin had a number average molecular weight of 52,000 Daltons.

(52) TABLE-US-00001 TABLE 1 Multi- Di- Epoxide Average Cross- Cross- functional functional Equivalent Aromatic Link Density Link Density Formula Phenoxy Epoxy Epoxy Photoacid weight content (10 C. (30 C. No. Resin Comp. 2 Comp. 2 generator (EEW) (wt. %) Tan Delta) Tan Delta) 1 40 30 30 22.2 249-273 48.0 22.4 11.3 2 40 40 20 22.2 254-285 48.0 21.6 5.8 3 40 35 25 22.2 252-279 48.0 13.3 4.4 4 30 45 25 22.2 244-271 42.6 49.4 30.7 5 20 55 25 11.1 212-238 37.2 125.1 87.1 6 20 55 25 22.2 238-267 37.2 5.6 0.2 7 40 0 60 22.2 233-239 48.0 5.5 3.3

(53) TABLE-US-00002 TABLE 2 Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 2 Comp. 4 generator (EEW) (wt. %) Tan Delta) Tan Delta) 8 40 30 30 22.2 220-248 48.6 18.8 10.2 9 40 0 60 22.2 186-203 49.2 5.2 2.1 10 40 20 40 22.2 207-230 48.8 28.6 12.5 11 40 20 40 11.1 179-199 48.8 13.8 0.6

(54) TABLE-US-00003 TABLE 3 Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 5 Comp. 4 generator (EEW) (wt. %) Tan Delta) Tan Delta) 12 40 30 30 22.2 250-268 45.6 20.7 9.7 13 40 40 20 22.2 281-299 44.4 12.8 6.1

(55) TABLE-US-00004 TABLE 4 Multi- Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 2 Comp. 5 Comp. 2 generator (EEW) (wt. %) Tan Delta) Tan Delta) 14 40 35 10 15 22.2 271-301 47.0 24.5 14.5

(56) TABLE-US-00005 TABLE 5 Di- Di Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 2 Comp. 5 generator (EEW) (wt. %) Tan Delta) Tan Delta) 15 40 30 30 22.2 423-447 51.9 2.0 1.2

(57) TABLE-US-00006 TABLE 6 Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 1 Comp. 2 generator (EEW) (wt. %) Tan Delta) Tan Delta) 16 40 30 30 22.2 226-234 48.3 21.7 14.0

(58) TABLE-US-00007 TABLE 7 Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 1 Comp. 4 generator (EEW) (wt. %) Tan Delta) Tan Delta) 17 40 30 30 22.2 205-215 48.9 25.0 13.3

(59) TABLE-US-00008 TABLE 8 Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 3 Comp. 4 generator (EEW) (wt. %) Tan Delta) Tan Delta) 18 40 30 30 22.2 239-256 45.0 66.8 9.5

(60) TABLE-US-00009 TABLE 9 Multi- Di- Epoxide Average Cross-Link Cross-Link functional functional Equivalent Aromatic Density Density Formula Phenoxy Epoxy Epoxy Photoacid weight Content (10 C. (30 C. No. Resin Comp. 4 Comp. 4 generator (EEW) (wt. %) Tan Delta) Tan Delta) 19 40 30 30 22.2 226-242 48.6 39.6 18.9

(61) Using the formulas from the foregoing tables 1-9, the properties of each photoresist layer may be selected in order to provide the composite film 200 having the desired chemical resistance, flexibility, stability, and the like when cured. Thus, each layer of the composite film 200 may be provided with different properties as desired for the particular MEMS or nano-device application through the thickness T of the composite layer 200.

(62) In order to provide the composite film layer 200, the first layer 210 of photoresist resin may be coated onto the carrier film 212 and dried. Next the second layer 214 of photoresist resin may be coated onto the first layer 210 and dried. The composite dry film layer 200 may then be removed from the carrier film 212 and laminated to the device surface 114 of the substrate 110 as shown in FIG. 6 according to step 62 (FIG. 3).

(63) With reference to FIG. 7, the first layer 210 may be exposed to e-line, g-line, K-line, i-line, mid UV, or deep UV radiation 220 through a mask 222 to provide formation of the flow features in the first layer 210 of the composite film layer 200. Next, as shown in FIG. 8, the second layer 214 of the composite film layer 200 is exposed to e-line, g-line, h-line, i-line, mid UV, or deep UV radiation 224 through a second mask 226 to provide the nozzle features in the second layer 214 of the composite film. FIG. 8 illustrates the undeveloped flow features 228 and undeveloped nozzle features 230 in the composite film layer 200.

(64) After exposing the composite film 200 to radiation, the composite film layer 200 is heated to cross-link the photoresist material in the exposed areas thereof. A developer solvent is then applied to the substrate 110 and composite film layer 200 to remove uncured photoresist material thereby forming the fluid supply channels 118 (FIGS. 4A-4B), fluid chambers 120, and nozzle holes 126 therein. In one embodiment, the substrate 110 containing the radiation exposed composite film layer 200 is placed in a developer bath using megasonic agitation to dissolve the uncross-linked materials in both the first layer 210 and the second layer 214 so that the uncrosslinked material from the layer 210 is dissolved through the previously formed via 116 and the uncrosslinked material from 214 is dissolved to form the nozzle holes 126 in layer 214. Illustrative developers used in the developer bath include, for example, butyl cellosolve acetate, cyclohexanone, methyl ethyl ketone, a xylene and butyl cellosolve acetate mixture, and C.sub.1-6 acetates like butyl acetate, or a combination of two or more of the foregoing. A third heating step at a temperature of about 200 C. for about 2 hours may be used to remove any residual photoacid generator that may be in the composite film layer 200.

(65) In an alternative embodiment illustrated in FIG. 9, the composite film layer 240 may attached to the carrier film 212. The composite photoresist film layer 240 includes the first layer 210 described above. The thickness of the first layer 210 may range from about 3 to about 50 m. The composite film layer 240 may also contain the second layer 242 described above. The second layer 242 may have a thickness ranging from about 3 to 50 m. In one embodiment, a third layer 244 formulated from a hydrophilic third photoresist resin having a high cross-linked density may be applied to the second layer 242. The third layer 244 may have a thickness ranging from about 3 to about 50 m and may be exposed to e-line, g-line, h-line, i-line, mid UV, or deep UV radiation through a mask to form flow features in the third layer 244.

(66) By using the composite film layers 200 and 240 described above, the use of multiple adhesion promotion steps for making the fluid ejection head may be avoided. Also, as shown above, each layer may have different physical properties due to the chemical properties of the formulations used to make the layers. Since the formulations of each layer are similar, except for the chemical properties of epoxide equivalent weight, crosslink density or aromatic content, the layers will mix and adhere to each other at the interface between the layers without the need for an adhesion promotion layer. The type of photoacid generator and amount of green dye may be varied in the layers to further enhance the radiation wavelengths needed to image the layers.

(67) As described above, each layer may have a different mechanical property depending on the chemical properties of the photoresist resin used in each layer. Accordingly, a MEMS or nano-device having multiple physical properties may enable tailoring of specific layers' physical properties to help create micro-filters, micro-separators, micro-sieves and other micro and nano scale fluid handling structures.

(68) Having described various aspects and embodiments of the disclosure and several advantages thereof, it will be recognized by those of ordinary skills that the embodiments are susceptible to various modifications, substitutions and revisions within the spirit and scope of the appended claims.