Manufacturing Method of Micro-Electro-Mechanical System Device

Abstract

A manufacturing method for a Micro-Electro-Mechanical Systems (MEMS) structure includes implementing a surface modification process, to form a transformation layer on the surfaces of the MEMS structure; implementing an anti-stiction coating clean process, to clean the transformation layer on the surfaces towards a particular direction; and implementing an anti-stiction coating process, to coat a monolayer on the surfaces of the MEMS structure.

Claims

1. A manufacturing method for a Micro-Electro-Mechanical System (MEMS) structure, comprising: implementing a surface modification process to a structured wafer, to form a transformation layer on the surfaces of the MEMS structure; implementing an anti-stiction coating clean process to the structured wafer, to clean the transformation layer on the surfaces towards a particular direction; and implementing an anti-stiction coating process to the structured wafer, to coat a monolayer layer on the surfaces of the MEMS structure.

2. The manufacturing method of claim 1, wherein the structured layer comprises a bonding ring of the MEMS structure, and the anti-stiction coating clean process cleans the transformation layer of the bonding ring towards the particular direction.

3. The manufacturing method of claim 1, wherein the surface modification process is isotropic.

4. The manufacturing method of claim 3, wherein the surface modification process is an oxygen plasma treatment process without substrate bias.

5. The manufacturing method of claim 1, wherein the transformation layer is an oxide layer.

6. The manufacturing method of claim 1, wherein the anti-stiction coating clean process is anisotropic.

7. The manufacturing method of claim 6, wherein the anti-stiction coating clean process is a plasma-cleaning process of inert gas with substrate bias.

8. The manufacturing method of claim 1, wherein the anti-stiction coating process is a chemical vapor deposition process using one of dichlorodimethylsilane, octadecyltrichlorosilane, 1H 1H 2H 2H-perfluorodecyltrichlorosilane and 1H, 1H, 2H, 2H-perfluorooctyltrichlorosilane.

9. The manufacturing method of claim 1, further comprising: before implementing the surface modification process, implementing a structure clean process to the structured layer.

10. The manufacturing method of claim 1, further comprising: after implementing the anti-stiction coating process, implementing a sealing process so as to bond a cap wafer and the structured wafer.

11. The manufacturing method of claim 10, further comprising: before implementing the sealing process, implementing a cap wafer clean process to the cap wafer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] FIG. 1 illustrates a process of a conventional manufacturing method of an MEMS device.

[0012] FIG. 2 illustrates a process of a conventional manufacturing method of an MEMS device.

[0013] FIG. 3 illustrates a process of a manufacturing method according to an embodiment of the present invention.

[0014] FIG. 4 illustrates a process of a manufacturing method of an MEMS device according to an embodiment of the present invention.

[0015] FIG. 5 is a schematic diagram of an MEMS structure according to an embodiment of the present invention.

[0016] FIG. 6 is a schematic diagram of an MEMS structure according to an embodiment of the present invention.

DETAILED DESCRIPTION

[0017] Please refer to FIG. 3, which illustrates a process of a manufacturing method 30 according to an embodiment of the present invention. The manufacturing method 30 may be applied for Micro-Electro-Mechanical System (MEMS) devices in the electronic products. For example, the MEMS device may be utilized to sense pressure, acoustic wave or acceleration, etc., and is not limited herein. As shown in FIG. 3, the manufacturing method 30 comprises:

[0018] Step 302: Implement a surface modification process.

[0019] Step 304: Implement an anti-stiction coating clean process.

[0020] Step 306: Implement an anti-stiction coating process.

[0021] About the detailed description of the manufacturing method 30, please refer to FIG. 4 and the following statements. First, in order to coat a monolayer for anti-stiction on a MEMS structure on a structured wafer more easily, the isotropic surface modification process is implemented to change the surface materials of the MEMS structure on the structured wafer. In one embodiment, the surface modification process is an oxygen plasma treatment process without substrate bias, and is not limited herein.

[0022] Because the substrate in the surface modification process is not biased, the air particles used by the surface modification process does not move towards a particular direction, i.e. the air particles are isotropic, such that the surface modification process changes all of the surface materials of the MEMS structure to form a transformation layer. Taking the oxygen plasma treatment process stated above as an example, because the substrate of the structured wafer is not biased, there are more collisions between the oxygen ions used by the surface modification process, such that the oxygen ions move with worse linearity and shorter mean free path. Therefore, the oxygen ions may effectively modify the surfaces of the MEMS structure in different directions (including the surfaces on the side and the surfaces being shaded). Please refer to FIG. 5, which is a schematic diagram of an MEMS structure manufactured by an embodiment of the present invention, wherein the MEMS structure on the structured wafer comprises a movable component and a bonding ring for bonding a cap wafer. As shown in FIG. 5, after implementing the surface modification process, the surfaces of the MEMS structure in different directions (including the surfaces on the side, the surfaces being shaded by the movable component and the bonding ring) are able to be modified to the transformation layer (e.g. an oxide layer).

[0023] Then, the anti-stiction coating clean process is implemented, which the anti-stiction coating clean process is anisotropic, to further clean the transformation layer on the surfaces of the MEMS structure towards a particular direction (e.g. facing up). For example, the anti-stiction coating clean process may be the plasma-cleaning process of inert gas (e.g. argon) with substrate bias.

[0024] It is noted that because the substrate is biased, the air particles used by the anti-stiction coating clean process move towards a particular direction, i.e. the air particles are anisotropic, such that the anti-stiction coating clean process cleans the transformation layer on the surfaces towards the particular direction. Taking the plasma-cleaning process of inert gas stated above as an example, through applying the substrate bias (e.g. a negative voltage) under the MEMS structure, there are less collisions between the argon ions used by the anti-stiction coating clean process, such that the argon ions move with better linearity and longer mean free path. Therefore, the argon ions may effectively clean the surfaces of the MEMS structure towards the particular direction, such that the surfaces of the MEMS structure towards other directions are not affected. Please refer to FIG. 6, which is a schematic diagram of an MEMS structure according to an embodiment of the present invention. According to the embodiment shown in FIG. 6, through applying the substrate bias under the MEMS structure, the air particles move downward, such that the anti-stiction coating clean process cleans the transformation layer of the surfaces of the MEMS structure which faces upward. Under such a circumstance, since the transformation layer of the surfaces of the bonding ring of the MEMS structure which faces upward is cleaned, the bonding ring may be properly bonded to the cap wafer. In addition, the transformation layer on the surfaces which face other directions (i.e. the surfaces on the side) or the surfaces which are shaded by other objects (i.e. the surfaces shaded by the movable component) is not substantially affected. Therefore, when the anti-stiction coating process is implemented to the MEMS structure, the monolayer may be properly coated on the surfaces of the MEMS structure, such that the stiction failure is avoided on the MEMS structure.

[0025] Please refer to FIG. 4 again to implement an anti-stiction coating process on the structured wafer to form the monolayer on the surfaces of the MEMS structure. The anti-stiction coating process may be a chemical vapor deposition (CVD) process using dichlorodimethylsilane (DDMS), octadecyltrichlorosilane (OTS), 1H 1H 2H 2H-perfluorodecyltrichlorosilane (FDTS) or 1H, 1H, 2H, 2H-perfluorooctyltrichlorosilane (FOTS). The CVD process may be an atmospheric pressure CVD (APCVD) process, a low-pressure CVD (LPCVD) process, a plasma-enhanced CVD (PECVD) process, and is not limited herein.

[0026] After forming the monolayer on the surfaces of the MEMS structure, a sealing (Hermeticity seal) process (e.g. the eutectic bonding process using the material of Al/Ge) is implemented to bond the cap wafer with the structured wafer, so as to manufacture the MEMS device. Moreover, a cap wafer clean process may be preferably implemented on the cap wafer before the sealing process is implemented, wherein the cap wafer clean process may as well be the plasma-cleaning process of inert gas with substrate bias. Accordingly, the bonding ring on the cap wafer may be cleaned before implementing the sealing process, which is beneficial to the implementation of the following sealing process to further elevate the air tightness of the MEMS device.

[0027] Through adopting the manufacturing method 30 shown in FIG. 3, the monolayer on the surfaces of the MEMS structure is not damaged by the following process, such that the stiction failure is avoided on the MEMS device. In addition, the bonding ring on the MEMS structure for bonding the cap wafer may be bonded to the cap wafer tightly, such that the hermeticity failure of the MEMS device is more unlikely to occur. In other words, the manufacturing method 30 of the present invention may improve the stiction failure and the hermeticity failure issues of the MEMS device. According to different applications and design concepts, the manufacturing method 30 may be adaptively modified or adjusted. For example, before implementing the surface modification process, a clean process may be implemented to the structured wafer to improve the hermeticity failure of the MEMS device.

[0028] Furthermore, according to another embodiment of the present invention, a structure clean process may be implemented before the surface modification process, wherein the structure clean process may as well be a plasma-cleaning process of inert gas with substrate bias. Accordingly, the surfaces and the bonding ring of the MEMS structure on the structured wafer may be cleaned before implementing the surface modification process, which is beneficial to the implementation of the following sealing process to further elevate the air tightness of the MEMS device.

[0029] In summary, the manufacturing method disclosed in the above embodiments implement an additional anti-stiction coating clean process between implementing the surface modification process and the anti-stiction coating process to the MEMS structure, such that the bonding ring is not affected by the surface modification process and bonds tightly in the following bonding process. In addition, after implementing the anti-stiction coating clean process, the anti-stiction coating process may properly coat the monolayer on the surfaces of the MEMS structure. Therefore, the manufacturing method disclosed in the above embodiments may improve the stiction failure and the hermeticity failure issues of the MEMS device simultaneously.

[0030] Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.