DETECTION OF SENSOR PASSIVATION FAILURE

Abstract

Embodiments described herein involve a sensor test structure, comprising a substrate. A moat structure is configured to at least partially surround a resonating structure comprising at least one piezoelectric layer. An electrode comprises an electrode path. The electrode path crosses the moat region at least one time. Each moat crossing is configured to cause a change in resistance based on passivation failure of the moat structure.

Claims

1.-20. (canceled)

21. A sensor test structure, comprising: a substrate; a moat structure configured to at least partially surround a resonating structure comprising at least one piezoelectric layer; and an electrode comprising an electrode path configured to cross the moat structure a plurality of times along a majority of the moat structure, wherein each moat crossing is configured to cause a change in resistance based on passivation failure of the moat structure.

22. The sensor test structure of claim 21, further comprising a detector configured to detect the change in resistance of the electrode path.

23. The sensor test structure of claim 22, further comprising an analyzer configured to determine passivation failure of the moat structure based on the detected change in resistance.

24. The sensor test structure of claim 21, wherein the change is resistance comprises an increase in resistance.

25. The sensor test structure of claim 21, wherein the moat structure is substantially a circular structure.

26. The sensor test structure of claim 21, wherein the electrode path is configured to cross the moat structure in a range of about 10 times to about 30 times.

27. The sensor test structure of claim 21, wherein the electrode path is configured to cross the moat structure about 12 times.

28. The sensor test structure of claim 21, wherein the electrode path is configured to cross the moat structure about 24 times.

29. The sensor test structure of claim 21, further comprising an analyzer configured to determine if the change in resistance is in a predetermined threshold range.

30. The sensor test structure of claim 29, wherein the predetermined threshold range is about 35 to about 95.

31. The sensor test structure of claim 30, wherein the predetermined threshold range is about 50 to about 80.

32. The sensor test structure of claim 29, wherein if it is determined that the change in resistance is outside of the predetermined threshold range, the analyzer is configured to determine that passivation failure has occurred.

33. A system, comprising: a sensor comprising: a substrate; a resonating structure disposed proximate the substrate comprising at least one piezoelectric layer; a moat structure at least partially surrounding the resonating structure; an electrode comprising an electrode path configured to cross the moat structure a plurality of times along a majority of the moat structure, wherein each moat crossing is configured to cause a change in resistance based on passivation of the moat structure; a detector configured to detect the change in resistance; and an analyzer configured to determine passivation failure of the moat structure based on the detected change in resistance.

34. The system of claim 33, wherein the change is resistance comprises an increase in resistance.

35. The system of claim 33, wherein the moat structure is substantially a circular structure.

36. The system of claim 33, wherein the electrode path is configured to cross the moat structure about 12 times.

37. The system of claim 33, wherein the electrode path is configured to cross the moat structure about 24 times.

38. The system of claim 33, wherein the analyzer is configured to determine if the detected change in resistance is in a predetermined threshold range.

39. The system of claim 38, wherein the predetermined threshold range is about 35 to about 95.

40. The system of claim 39, wherein the predetermined threshold range is about 50 to about 80.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG. 1 is a schematic cross-sectional view of a portion of a bulk acoustic wave (BAW) Microelectromechanical system (MEMS) resonator structure useable with embodiments disclosed herein;

[0010] FIGS. 2A and 2B show an example of a test structure for detecting passivation failure in accordance with embodiments described herein;

[0011] FIGS. 3A and 3B show another example of a test structure for detecting passivation failure in accordance with embodiments described herein;

[0012] FIG. 3C shows the moat of FIGS. 3A and 3B with added layers at the moat crossings to simulate the moat changes at the crossings in accordance with embodiments described herein;

[0013] FIG. 3D illustrates a more detailed view of the added layers shown in FIG. 3C in accordance with embodiments described herein;

[0014] FIGS. 4A and 4B show another example of a test structure for detecting passivation failure in accordance with embodiments described herein;

[0015] FIG. 5 shows the test structure impedance results for the structure of FIG. 2A, FIG. 3A, and FIG. 4A 530 in accordance with embodiments described herein; and

[0016] FIG. 6 illustrates a system capable of determining passivation failure in accordance with embodiments described herein.

[0017] The schematic drawings are not necessarily to scale. Like numbers used in the figures refer to like components, steps and the like. However, it will be understood that the use of a number to refer to a component in a given figure is not intended to limit the component in another figure labeled with the same number. In addition, the use of different numbers to refer to components is not intended to indicate that the different numbered components cannot be the same or similar.

DETAILED DESCRIPTION

[0018] This disclosure generally relates to, among other things, methods, devices, sensors, and systems for detecting an analyte. The methods, devices, sensors, and systems use a thin film bulk acoustic wave (BAW) resonator that measures a change in frequency or phase of the resonator caused by the binding of the analyte on a surface of the resonator. An input electrical signal having a phase and having a frequency within a resonance band of the piezoelectric resonator is coupled to and transmitted through the resonator to generate an output electrical signal which is frequency-shifted or phase-shifted from the input signal due to binding, deposition, etc. of material being detected on the resonator surface. The output electrical signal received from the piezoelectric resonator is analyzed to determine the change in frequency or phase caused by the binding of analyte on the resonator surface. The measured change in frequency or phase provides quantitative information regarding the analyte (or tag-linked analyte molecule) bound to the resonator surface.

[0019] The sensors disclosed herein may include at least one thin film resonator sensor, such as a thin film bulk acoustic wave (BAW) resonator sensor. A BAW sensor includes a piezoelectric layer, or piezoelectric substrate, and input and output transducers. BAW sensors are small sensors, making the technology suitable for use in handheld devices. Accordingly, a handheld device for detecting target analytes comprising a sensor described herein is contemplated.

[0020] According to embodiments described herein, the resonator typically includes a planar layer of piezoelectric material bounded on opposite sides by two respective metal layers that form the electrodes of the resonator. The two surfaces of the resonator are free to undergo vibrational movement when the resonator is driven by a signal within the resonance band of the resonator. When the resonator is used as a sensor, at least one of its surfaces is adapted to provide binding sites for the material being detected. The binding of the material on the surface of the resonator alters the resonant characteristics of the resonator, and the changes in the resonant characteristics are detected and interpreted to provide quantitative information regarding the material being detected.

[0021] By way of example, such quantitative information may be obtained by detecting a change in the insertion or reflection coefficient phase shift of the resonator caused by the binding of the material being detected on the surface of the resonator. Such sensors differ from those that operate the resonator as an oscillator and monitor changes in the oscillation frequency. Rather such sensors insert the resonator in the path of a signal of a pre-selected frequency and monitor the variation of the insertion or reflection coefficient phase shift caused by the binding of the material being detected on the resonator surface. Of course, sensors that monitor changes in oscillation frequency may also be employed in accordance with the methods described herein.

[0022] FIG. 1 is a schematic cross-sectional view of a portion of a bulk acoustic wave (BAW) Microelectromechanical system (MEMS) resonator structure 3100 useable with embodiments disclosed herein. The resonator structure 3100 includes a substrate 3130 (e.g., typically silicon or another semiconductor material), an acoustic reflector 3140 arranged over the substrate 3130, a piezoelectric material 3160, and bottom and top side electrodes 3151, 3152. Electrodes may be formed of any suitable material, such as aluminum, tungsten, gold, titanium, molybdenum, or the like. Electrodes may be deposited by vapor deposition or may be formed by any other suitable process. The bottom side electrode 3151 is arranged along a portion of a lower surface 3161 of the piezoelectric material 3160 (between the acoustic reflector 3140 and the piezoelectric material 3160), and the top side electrode 3152 is arranged along a portion of an upper surface 3162 of the piezoelectric material 3160. An area in which the piezoelectric material 3160 is arranged between overlapping portions of the top side electrode 3152 and the bottom side electrode 3151 is considered an active region 3110 of the resonator device 3100 to which a biomolecule is preferably applied. The acoustic reflector 3140 serves to reflect acoustic waves and therefore reduce or avoid their dissipation in the substrate 3130. In certain embodiments, the acoustic reflector 3140 includes alternating thin layers 3141, 3142 of materials (e.g., silicon oxicarbide [SiOC], silicon nitride [Si.sub.3N.sub.4], silicon dioxide [SiO.sub.2], aluminum nitride [AlN], tungsten [W], and molybdenum [Mo]) having different acoustic impedance values, optionally embodied in a quarter-wave Bragg mirror, deposited over the substrate 3130. In certain embodiments, other types of acoustic reflectors may be used. Steps for forming the resonator device 3100 may include depositing the acoustic reflector 3140 over the substrate 3130, followed by deposition of the bottom side electrode 3151, followed by growth (e.g., via sputtering or other appropriate methods) of the piezoelectric material 3160, followed by deposition of the top side electrode 3152.

[0023] In certain embodiments, the piezoelectric material 3160 comprises a hexagonal crystal structure piezoelectric material (e.g., aluminum nitride or zinc oxide) that includes a c-axis having an orientation distribution that is predominantly non-parallel (and may also be non-perpendicular to) to normal of a face of the substrate 3130. Under appropriate conditions, presence of a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of a substrate enables a BAW resonator structure to be configured to exhibit a dominant shear response upon application of an alternating current signal across a distal electrode and a proximal electrode thereof (e.g., as may be desirable in the context of a BAW resonator structure providing sensing utility).

[0024] The bulk acoustic wave MEMS resonator structure 3100 shown in FIG. 2A lacks any layers (e.g., including functionalization material) overlying the active region 3110 that may permit the resonator device 3100 to be used as a biochemical sensor. If desired, at least portions of the resonator device 3100 shown in FIG. 1 (e.g., including the active region 3110) may be overlaid with various layers, such as one or more of: a hermeticity layer, an interface layer, a self-assembled monolayer (SAM), a passivation layer and/or a functionalization material layer (which may include specific binding material or non-specific binding material). A passivation layer may function as a moisture barrier layer for example. Illustrative passivation layers can include silicon nitride, and aluminum oxide (e.g., ALD deposited AlO) for example. Passivation layers may provide moisture barrier properties that could serve to protect the device.

[0025] Embodiments described herein involve a test structure designed to detect the presence of bottom electrode attack, due to passivation failure. This may be done during an acid test, for example. Detection of acid attack may be accomplished by measuring an increased resistance of the electrode path during electrical test post acid dip. For example the system may be submersed in a phosphoric-acetic-nitric acid mix to see if underlying metal structure is not protected by the passivation.

[0026] In general, some biosensor designs may include a moat that at least partially surrounds the resonator. According to various configurations, the moat may be etched. The moat region may be susceptible to bottom electrode (BE) attack during final use if the passivation fails. Embodiments described herein involve systems and methods for testing the integrity of the passivation at the wafer level. Specifically, an electrical test may be used to detect the passivation failure and subsequent BE metal attack post acid dip. The proposed test structure may be used when visual inspection is not possible and/or not practical.

[0027] The test structure uses a BE path that meanders across the moat structure providing multiple opportunities to detect metal attack of the thin BE lines as they cross the moat structure. Each crossing BE line which is attacked may change the resistance of the structure. For example, each crossing which is attacked may increase the resistance of the structure. In some cases, each crossing substantially opens the resistance when it is attacked. This allows for detection during an electrical test without visual inspection.

[0028] FIGS. 2A and 2B show an example of a test structure for detecting passivation failure in accordance with embodiments described herein. A BE path 220 has a plurality of intersections 230 with a moat structure 210. In this example, the BE path 220 crosses 230 the moat structure 12 times. Therefore, the system shown in FIGS. 2A-2B provides 12 opportunities to detect BE attack due to passivation failure. If adequate passivation of the BE has occurred, the measured resistance of the electrode path may be in a range of about 50 to about 80. If the measured resistance is outside of this range, it may be determined that the passivation has failed at one or more of the moat crossings 230. In some cases, if the calculated resistance of the electrode path is more than a predetermined threshold beyond an estimated resistance (e.g., 65), it may be determined that the passivation has failed. DC probe pads 250, 255 may be used to enable both RF and DC probing. According to various embodiments, a four-point probe DC resistance test may be used with the four pad 250, 255, 252, 257 configuration shown here. In some cases, the two central pads 250, 255 can serve as signal-ground for an RF probe.

[0029] FIGS. 3A and 3B show another example of a test structure for detecting passivation failure in accordance with embodiments described herein. A BE path 320 has a plurality of intersections 330 with a moat structure 310. In this example, the BE path 320 crosses 330 the moat structure 24 times. Therefore, the system shown in FIGS. 3A-3B provides 24 opportunities to detect BE attack due to passivation failure. This is two times the opportunity to detect BE attack than the example shown in FIGS. 2A and 2B If adequate passivation of the BE has occurred, the measured resistance of the electrode path may be in a range of about 65 to about 95. If the measured resistance outside of this range, it may be determined that the passivation has failed at one or more of the moat crossings 330. In some cases, if the calculated resistance of the electrode path is more than a predetermined threshold beyond an estimated resistance (e.g., 80), it may be determined that the passivation has failed. DC probe pads 350, 355 may be used to enable both RF and DC probing

[0030] FIG. 3C shows the moat with added layers at the moat crossings to simulate the moat changes at the crossings. A more detailed view of the added layers at location 350 of FIG. 3C is shown in FIG. 3D. In this example, the additional layers include a under-bump (UB) metal layer 360, a top electrode layer (TE) 370, and a passivation (PA) layer 380. According to various embodiments, the UB metal layer comprises Au. In some cases, the PA layer comprises SiN. Various dimensions (W.sub.1, W.sub.2, W.sub.3, W.sub.4, W.sub.5, W.sub.6, W.sub.7, W.sub.8) of the different layers and between the different layers are shown. W.sub.1 may be in a range of about 1 m to about 3 m. In some cases, W.sub.1 is about 2 m. W.sub.2 may be in a range of about 1 m to about 3 m. In some cases, W.sub.2 is about 2 m. W.sub.3 may be in a range of about 2 m to about 4 m. In some cases, W.sub.3 is about 3 m. W.sub.4 may be in a range of about 3 m to about 7 m. In some cases, W.sub.4 is about 5 m. W.sub.5 may be in a range of about 1 m to about 3 m. In some cases, W.sub.5 is about 2 m. W.sub.6 may be in a range of about 7 m to about 13 m. In some cases, W.sub.6 is about 10 m. W.sub.7 may be in a range of about 7 m to about 13 m. In some cases, W.sub.7 is about 10 m. W.sub.8 may be in a range of about 3 m to about 7 m. In some cases, W.sub.8 is about 5 m. A width of the BE path, W.sub.BE, may be in a range of about 4 m to about 8 m. In some cases, W.sub.BE is about 6 m. W.sub.BE may be substantially constant throughout the BE path as shown in the examples of FIGS. 3A-3D. In some cases, W.sub.BE may vary depending on a location of the BE path.

[0031] FIGS. 4A and 4B show another example of a test structure for detecting passivation failure in accordance with embodiments described herein. A BE path 420 has a plurality of intersections 430 with a moat structure 410. Similarly to FIGS. 3A-3D, the BE path 420 crosses 430 the moat structure 24 times. Therefore, the system shown in FIGS. 4A-4B provides 24 opportunities to detect BE attack due to passivation failure. If adequate passivation of the BE has occurred, the measured resistance of the electrode path may be in a range of about 35 to about 65. If the measured resistance outside of this range, it may be determined that the passivation has failed at one or more of the moat crossings 430. In some cases, if the calculated resistance of the electrode path is more than a predetermined threshold beyond an estimated resistance (e.g., 50), it may be determined that the passivation has failed. DC probe pads 450, 455 may be used to enable both RF and DC probing

[0032] FIG. 5 shows the test structure impedance results for the structure of FIG. 2A 510, FIG. 3A 520, and FIG. 4A 530 in accordance with embodiments described herein.

[0033] FIG. 6 illustrates a system capable of determining passivation failure in accordance with embodiments described herein. A sensor 610 is coupled to a sensor test structure. The sensor test structure includes a detector 620 configured to detect the change in resistance of the electrode path. An analyzer 630 may be configured to determine passivation failure of the moat structure based on the detected change in resistance. In some cases, the analyzer is configured to determine if the sensed resistance is in a predetermined threshold range (e.g., about 35 to about 95). According to various embodiments, if it is determined that the sensed resistance is outside of the predetermined threshold range, the analyzer is configured to determine that passivation failure has occurred.

[0034] Illustrative embodiments are described and reference has been made to possible variations of the same. These and other variations, combinations, and modifications will be apparent to those skilled in the art, and it should be understood that the claims are not limited to the illustrative embodiments set forth herein.

[0035] All scientific and technical terms used herein have meanings commonly used in the art unless otherwise specified. The definitions provided herein are to facilitate understanding of certain terms used frequently herein and are not meant to limit the scope of the present disclosure.

[0036] As used in this specification and the appended claims, the singular forms a, an, and the encompass embodiments having plural referents, unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term or is generally employed in its sense including and/or unless the content clearly dictates otherwise. The term and/or means one or all of the listed elements or a combination of any two or more of the listed elements.

[0037] As used herein, have, having, include, including, comprise, comprising or the like are used in their open-ended sense, and generally mean including, but not limited to. It will be understood that consisting essentially of, consisting of, and the like are subsumed in comprising and the like. As used herein, consisting essentially of, as it relates to a composition, product, method or the like, means that the components of the composition, product, method or the like are limited to the enumerated components and any other components that do not materially affect the basic and novel characteristic(s) of the composition, product, method or the like.

[0038] The words preferred and preferably refer to embodiments of the invention that may afford certain benefits, under certain circumstances. However, other embodiments may also be preferred, under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, and is not intended to exclude other embodiments from the scope of the disclosure, including the claims.

[0039] Also herein, the recitations of numerical ranges by endpoints include all numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3, 2.9, 1.62, 0.3, etc.). Where a range of values is up to a particular value, that value is included within the range.

[0040] Any direction referred to herein, such as top, bottom, left, right, upper, lower, and other directions and orientations are described herein for clarity in reference to the figures and are not to be limiting of an actual device or system or use of the device or system. Devices or systems as described herein may be used in a number of directions and orientations.