METHOD AND OPTOELECTRONIC DEVICE

Abstract

In an embodiment a method includes providing a growth substrate layer, depositing a first doped [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction, and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(Al.sub.aGa.sub.1-a).sub.bIn.sub.1-b].sub.cP.sub.1-c quantum well layers and [(Al.sub.dGa.sub.1-d).sub.eIn.sub.1-e].sub.fP.sub.1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises doping with a dopant having a concentration in a range of 1e.sup.15 atoms/cm.sup.3 to 5e.sup.17 atoms/cm.sup.3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si or depositing a second doped carrier transport [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer with x in a range of [0.45;1] along the growth direction.

Claims

1.-21. (canceled)

22. A method for manufacturing an optoelectronic device, the method comprising: providing a growth substrate layer; depositing a first doped [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction; and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(Al.sub.aGa.sub.1-a).sub.bIn.sub.1-b].sub.cP.sub.1-c quantum well layers and [(Al.sub.aGa.sub.1-d).sub.eIn.sub.1-e].sub.fP.sub.1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises: doping with a dopant having a concentration in a range of 1e.sup.15 atoms/cm.sup.3 to 5e.sup.17 atoms/cm.sup.3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si; or depositing a second doped carrier transport [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer with x in a range of [0.45;1] along the growth direction.

23. The method according to claim 22, wherein the doping takes place of at least one quantum barrier layer.

24. The method according to claim 22, wherein the concentration of the dopant varies while doping.

25. The method according to claim 22, wherein doping with the dopant takes place after depositing of a material for the at least one of the barrier layer or the quantum well layer has started and ends prior to stopping depositing of the material for the at least one of the barrier layer or the quantum well layer;

26. The method according to claim 22, wherein depositing the active region comprises depositing between 3 and 30 quantum well layers, inclusive, whereas the quantum well layers each comprise a thickness between 2 nm und 15 nm, inclusive, and quantum barrier layers each comprise a thickness between 3 nm und 25 nm, inclusive.

27. The method according to claim 22, wherein depositing the active region comprises annealing, at a temperature range between 450? C. and 600? C., inclusive, the deposited plurality of alternating quantum well layers and barrier layers.

28. The method according to claim 22, wherein depositing the first doped carrier transport layer comprises depositing an un-doped [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer prior to depositing the active region.

29. The method according to claim 22, wherein at least some of the plurality of barrier layers comprise different Al content with respect to each other, wherein a Al content within each barrier layer is constant, and/or wherein a minimum and maximum Al content of the different layers within the active region is different by a factor in a range of 1.1 to 3.5.

30. The method according to claim 22, wherein at least some of the barrier layers comprise different thicknesses, and wherein a minimum and a maximum thickness of the barrier layers in the active region differ by a factor between 1.5 and 6, inclusive.

31. The method according to claim 22, wherein y and z are each in a range of [0.45;0.55] and b and c are in a range of [0.45;0.55]

32. The method according to claim 22, further comprising: depositing a structured mask layer; and depositing and diffusing a dopant through the second doped carrier transport [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer into the active region to obtain quantum well intermixed areas.

33. The method according to claim 32, wherein the dopant is deposited at a first temperature and diffused at a second temperature, the second temperature being higher than the first temperature.

34. The method according to claim 32, wherein the dopant is Zn.

35. The method according to claim 32, wherein diffusing the dopant through the second doped carrier transport layer comprises providing AsH.sub.3 or any other group V containing gas.

36. An optoelectronic device, comprising: a first doped carrier transport [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer with x in a range of [0;0.5]; an active region arranged on the first doped carrier transport layer, the active region configured to generate radiation and comprising a plurality of alternating [(Al.sub.aGa.sub.1-a).sub.bIn.sub.1-b].sub.cP.sub.1-c quantum well layers and [(Al.sub.aGa.sub.1-d).sub.eIn.sub.1-e}.sub.fP.sub.1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0]; and a second doped carrier transport [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer arranged on the active region with x in a range of [0;0.5], wherein at least one of the plurality of quantum well layers and/or the barrier layers comprise a dopant having a concentration in a range of 1e.sup.15 atoms/cm.sup.3 to 5e.sup.17 atoms/cm.sup.3 and with the dopant selected from at least one of the group consisting of Mg, Zn, Te and Si.

37. The optoelectronic device according to claim 36, wherein the active region comprises between 3 and 30 quantum well layers, inclusive, whereas the quantum well layers each comprise a thickness between 2 nm und 15 nm, inclusive and the quantum barrier layers each comprise a thickness between 3 nm und 25 nm, inclusive.

38. The optoelectronic device according to claim 36, further comprising: a layer with a decreasing dopant concentration arranged between at least one of the first doped carrier transport layer and the active region; and/or a layer with an increasing dopant concentration arranged between the active region and the second doped carrier transport layer.

39. The optoelectronic device according to claim 36, wherein at least some of the plurality of barrier layers comprise different Al content with respect to each other, wherein an Al content within each barrier layer is constant, and/or wherein a minimum and a maximum Al content between the different layers within the active region is different by a factor in a range of 1.1 to 3.5.

40. The optoelectronic device according to claim 36, wherein the dopant in the active region extends over a plurality of alternating quantum well layers and barrier layers.

41. The optoelectronic device according to claim 36, further comprising a quantum well intermixed area having a dopant concentration larger than a dopant concentration in a non-intermixed area, wherein the dopant comprises Zn.

42. The optoelectronic device according to claim 41, wherein the quantum well intermixed area is adjacent to an edge interface of the optoelectronic device.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Further aspects and embodiments in accordance with the proposed principle will become apparent in relation to the various embodiments and examples described in detail in connection with the accompanying drawings in which

[0029] FIG. 1 shows an embodiment of an optoelectronic device in accordance with some aspects of the proposed principle;

[0030] FIG. 2 illustrates the dopant concentration across the active region in an embodiment of an optoelectronic device in accordance with the proposed principle;

[0031] FIGS. 3A to 3I illustrate various steps of an embodiment for manufacturing an optoelectronic device in accordance with some aspects of the proposed principle;

[0032] FIG. 4 illustrate a diagram showing the performance improvement of optoelectronic devices according to the proposed principle in comparison to optoelectronic devices with unintentional doping;

[0033] FIG. 5 illustrates an example of the doping process of an optoelectronic device to illustrate some aspects of the present disclosure; and

[0034] FIG. 6 is an exemplary embodiment of an optoelectronic device to illustrate some aspects of the present disclosure.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0035] The following embodiments and examples disclose different aspects and their combinations according to the proposed principle. The embodiments and examples are not always to scale. Likewise, different elements can be displayed enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects of the embodiments and examples shown in the Figures can be combined with each other without further ado, without this contradicting the principle according to the invention. Some aspects show a regular structure or form. It should be noted that in practice slight differences and deviations from the ideal form or shape may occur without, however, contradicting the inventive idea.

[0036] In addition, the individual figures and aspects are not necessarily shown in the correct size, nor do the proportions between individual elements have to be essentially correct. Some aspects are highlighted by showing them enlarged. However, terms such as above, below larger, smaller and the like are correctly represented with regard to the elements in the figures. So it is possible to deduce such relations between the elements based on the figures.

[0037] FIG. 1 illustrates an embodiment of an optoelectronic device 1 in the AlGaInP material system implementing a low-doped active region in accordance with the present invention. The optoelectronic device 1 comprises an n-type contact layer 10a, followed by an n-type carrier distribution and transport layer 20. Contact layer 10a can be made of metal or any other suitable material. Carrier transport layer 20 is based on the AlGaInP material system with Te or Si as dopants. An active region 30 is arranged on top of n-type carrier transport layer 20 and comprises an alternating plurality of quantum well layers 32a, 32b and barrier layers 31a, 31b and 31c.

[0038] In particular, a first barrier layer 31a of the active region is adjacent to carrier transport layer 20. Then, a quantum well layer 32a is arranged on the first barrier layer 31a, followed by a second barrier layer 31b. This structure of alternating barrier layers and quantum well layers is repeated until the last barrier layer 31c.

[0039] On top of the last barrier layer 31c, a p-type charge carrier transport layer 40 is arranged. On top of the second charge carrier transport layer 40, a p-type contact layer 50 also acting in this embodiment as a structured mask is provided.

[0040] In accordance with the present invention, the aluminium content of the barrier layers 31a, 31b and 31c in the active region lies in the range for [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y)].sub.zP.sub.1-z with x between [0.60 and 1.00], and in this particular embodiment is around x=0.8. This will raise the energy bandgap level to approximately 2.4 eV, while the aluminium content of the quantum well layer 30a and 30b corresponds to [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-x)].sub.zP.sub.1-z with x below 0.5, corresponding to bandgap of 1.8 to 1.9 eV.

[0041] In accordance with the proposed principle, the active region 30, in particular, the barrier layers 31a, 31b and 31c are now doped with a low concentration dopant of magnesium, Mg during the growth of the respective barrier layers. Other dopants like Zn or also n-type dopants Te or Si may be suitable as well. A low concentration of dopants is referred to as low doping and is an intentional doping compared to unintentional doping or unintentional impurities. The low concentration of dopants for low doping may be in the range of about 1e16 to 3e17 atoms/cm.sup.3. As a consequence thereof, the low dopant provides a significant improvement of the quantum efficiency and thus of the device at low as well as higher current levels. Consequently, an un-doped or non-doped layer refers to a layer that is not intentionally doped. It may however still contain dopants and other impurities, which are inevitable part of the manufacturing process and cannot be avoided. Further, some diffusion of dopants from a doped region to an undoped region may take place resulting in a dopant gradient in said region.

[0042] In addition to this measure, a quantum well intermixing, QWI may be performed at the outer side edges of the respective device 1 as illustrated in FIG. 1. The dotted lines close to the edges of the device illustrate Zn diffused areas, in whose quantum well structures the QWI will take place. After structuring the contact layer 50 or deposition of a structured dielectric diffusion mask the quantum well intermixing is achieved by depositing and subsequently diffusing a p-type dopant, in particular Zn, into the p-type transport carrier layer 40 and the various quantum well layers and barrier layers of active region 30. The induced quantum well intermixing causes an increase of the energy bandgap in the area located closer to the edges of the device, thus preventing the charge carriers within the active region 30 from recombining at the sidewalls due to non-radiative surface recombination. Consequently, the ratio between radiative recombination and non-radiative recombination is shifted towards the radiative recombination.

[0043] FIG. 2 shows the variation of the dopant concentration across the various barrier and quantum well layers within the active region 30 of the device. In contrast to FIG. 1, the various layers are turned by 90? with the utmost left layer being layer 20a arranged between a doped charge transport layer 20 and active region 30. The first layer 20a comprises AlGaInP material with an aluminium content close to the first barrier layer 31a. The undoped carrier transport layer 20a is not shown in the embodiment of FIG. 1, but can be grown on the n-doped, charge carrier transport layer 20 and made of the same material.

[0044] Adjacent to the first barrier layer 31a, a first quantum well layer 32a is arranged. Following these two layers, a plurality of barrier and quantum well layers are alternating positioned on top of each other. Finally, the last barrier layer 31c is adjacent to a second charge transport layer 40.

[0045] On top of the shown structure, the concentration of the dopant is illustrated. During the growth of the various barrier and quantum layers a dopantin particular magnesiumhas been added into the respective barrier layer material. As a result, the dopant concentration is relatively large at the location of the barrier layers. No adding with magnesium or any other dopant occurs in this example during the growth of the quantum well layers, but only during the deposition of the respective barrier layers. However, due to diffusion of the respective dopant, the concentration of the dopant inside the quantum well layer is not zero but drops to a smaller level. This level is depending on the diffusion, which in turn can be controlled by the growth process and/or any subsequent annealing step. As a result, the dopant concentration becomes modulated across the active region and only decreases in the adjacent carrier transport layers 20a and 40.

[0046] The modulation of a concentration due to the illustrated diffusion can be adjusted in accordance with the needs and desires for the respective device. For example, doping can occur only during the growth of the respective barrier layers as illustrated. However, it is also possible to add dopant during the growth of the quantum well layers. The doping material can be the same but can also vary in the different barriers. In some aspects doping with magnesium, Mg or any other suitable dopants is performed only during a deposition of certain layers within active region and not, as illustrated in each barrier layer. For example, adding of dopant may occur only in the central layer of the active region, only in the layers adjacent to the carrier transport layers or only in each third or fourth layer.

[0047] Alternatively, the dopant concentration can also vary during the adding of the dopant itself. For example, the doping level can increase or decrease within the respective layers when starting from the first barrier layer 31a. It has been found that a dopant concentration in the range of 1e16 atoms/cm.sup.3 to 3e17 atoms/cm.sup.3 provides an improvement of the device and performance increase while higher doping concentrations in the range of 1e18 atoms/cm.sup.3 is detrimental.

[0048] FIG. 3A to 3I illustrates the manufacturing of an optoelectronic device in accordance with the proposed principle.

[0049] In FIG. 3A, a growth substrate 10 is provided on which the first charge carrier transport layer 20 is grown. In this embodiment, the charge carrier transport layer 20 is an n-type doped AlGaInP base with [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z having an aluminium content of approximately x between 0.5 and 1.0). Parameter y and z are in the range of 0.47 to 0.53. Between the first of transport layer 20 and growth substrate 10, a couple of sacrificial or other layers can be grown adjusting the lattice constant but also providing a smooth surface for the subsequently grown semiconductor layers.

[0050] On top of the first n-type doped carrier transport layer 20 an undoped layer 20a is arranged. The deposition can be easily achieved by reducing or otherwise changing the dopant concentration when growing the AlGaInP layer 20. It should be noted that other dopant concentrations for layer 20a can be easily adjusted to reflect the needs for the device.

[0051] In FIG. 3C, the first barrier layer 31a of the active region is grown on the undoped layer 20a with [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z having an aluminium content of x between 0.7 and 0.8). The growth speed for the respective barrier layer 31a can be reduced such that only a few layers of atoms are grown per minute. The overall thickness of the first barrier layer may be in the range of 3 to 20 nm. During the growth of the material of the first barrier layer, a dopant (in this particular example magnesium) is added, thus providing a low dopant concentration in the first barrier layer 31a. The dopant concentration is set to be around to 2e16 atoms/cm.sup.3.

[0052] On top of the first barrier layer 31a, as shown in FIG. 3D, a first quantum well layer 32a is grown. The aluminium content of this first quantum well layer 32a is significantly lower than the aluminium content of the first barrier layer 31a and may be in the range lower than x=0.5. Furthermore, no further dopant is added during the deposition of the material forming the first quantum well layer. The thickness of the quantum well layer 32a is selected to be in the same range as the barrier layer but can also be slightly smaller than the respective first barrier layer 31a. The reduced aluminium content results in a slimmer bandgap level of approximately 1.9 eV to 2.0 eV, compared to the barrier layer, which has a bandgap in the range of 2.4 eV.

[0053] In a subsequent step illustrated in FIG. 3E, a second barrier layer 31b is grown on the first quantum well layer while the dopant element is added during the deposition phase. The thickness of the second barrier layer 31b is in this example in the same range as the thickness of the first barrier layer, but may also be adjusted, for example can be larger or smaller than the first barrier layer 31a. In a subsequent step illustrated in FIG. 3F, a second quantum well layer 32b is grown again with no additional dopant being added during the deposition of the material.

[0054] The steps of the stacking alternating barrier and quantum well layers can be repeated until the desired structure of the active region is formed. As shown in this example, during the growth of the respective barrier layers, magnesium, Mg is added as a dopant during the deposition phases of the barrier layer material. In the particular embodiment, the adding of magnesium, Mg takes place slightly after the growth of the material of the respective barrier layers has begun and a first atomic layer has been grown. In other words, the adding of magnesium as a dopant is slightly delayed during the growth and will terminate slightly before ending the deposition of the respective barrier layer material.

[0055] FIG. 3G shows as a structure of the active region formed on the carrier transport layer 20 with exemplary three quantum well layers 32a, 32b and 32c, and in total four barrier layers 31a to 31d. On top of the last barrier layer 31d, the second p-type carrier transport layer 40 is grown. A contact layer 50 with a high p-dopant concentration is arranged on top of that second carrier transport layer 40.

[0056] The now existing structure resembles an optoelectronic device with an improved performance due to the low but well-defined concentration of dopant within certain layers of the active region. Similar to the previous embodiment, a modulation of the dopant concentration across the active region is achieved due to the diffusion of the dopant material Mg in adjacent quantum well layers. Said diffusion can be controlled to some extent by an annealing step either after the generation of the active region or after certain steps during the growth of the barrier layers and the quantum well layers, respectively.

[0057] A further improvement of the optoelectronic device can be achieved by additionally providing quantum well intermixing in certain areas of the active region. The areas selected for quantum well intermixing are closer to edges of the subsequently finalised optoelectronic device. For this purpose, the contact layer 50 is structured to provide openings 60 thereby exposing the surfaces of the p-type doped second carrier transport layer 40. Then in a subsequent step, dopant material Zn is deposited on the surfaces of the second carrier transport layer 40 as well as on the surface of the structured contact layer 50.

[0058] The deposition of Zn as a dopant is performed at a first relatively low temperature. This will prevent unintentional diffusion into the various layer and thus a better control of the diffusion depth is achieved. Subsequently the Zn dopant is diffused into the p-type carrier transport layer 40 as well as the active region 30 and the respective barrier and quantum well layers at a second temperature larger than the first temperature.

[0059] Due to the structured contact layer 50, the area in which such a quantum well intermixing takes place does not expand in the quantum well and barrier layers below the structured contact layer 50. To this extent, contact layer 50 acts as a diffusion mask. As a result, illustrated in FIG. 3I, the quantum well intermixed areas 70 are located at certain positions within the semiconductor material and the active region 30. The zinc diffused areas extend through the active region 30 close to the undoped layer 20a. The areas selected for quantum well intermixing are positioned at locations later used to separate the various devices thus forming the side edges of the respective devices. The bandgap in the quantum well intermixed areas increases such that charge carriers are facing a repelling electrical field preventing them from reaching the outer edges of the device, at which the surface recombination is highest. Together with the intentional low doping of the active region, the performance and quantum efficiency of the device can be increased further.

[0060] FIG. 4 shows a diagram illustrating the performance increase of an optoelectronic device and the method of manufacturing the same in accordance with the proposed principle in comparison with devices fabricated without intentional doping of the active layer. The y-axis of the diagram shows the light output power in arbitrary units starting from approximately 1200 units as its lower end and ending at about 1800 units.

[0061] Three examples are presented corresponding to a plurality of optoelectronic devices manufactured in the different ways. The first two optoelectronic device examples are based on the AlGaInP material system using an aluminium content in the barrier layers of x=0.8, as well as 12 unintentionally doped quantum well layers, each layer 3.6 nm wide. The optoelectronic devices measured in these instances comprise roughly a median illumination value of 1400 units with its 95% confidence interval reaching from approximately 1250 units to 1550 units. As a result, without the additional doping in the active region about 50% of the optoelectronic devices manufactured by this conventional method have an illumination of 1400 units.

[0062] In contrast, utmost right element corresponds to optoelectronic devices with the same aluminium content in the barrier layers as well as 12 quantum well layers, each of them having a thickness of 4 nm. In addition, the active region has been doped in the barrier layers with magnesium as a dopant. As shown in this illustration, the majority of electronic devices manufactured in this way have an illumination value roughly 200 units larger than the devices without magnesium doping with a median at approximately 1600 unit. The 95% confidence interval reaches from 1400 units to approximately 1800 units. This means that the additional doping provides a performance improvement of about 14%.

[0063] Apart from the additional dopant in the active region, it is also noted that the thickness of the quantum well layers are with 4 nm about 10% larger than in the two previous examples with 3.6 nm. However, that additional thickness should usually result in a lower illumination value and notas it is illustratedin a significantly increased illumination. Consequently, one can assume that quantum well layer thickness of 3.6 nm will even boost the performance further when intentionally doping the active region with a low concentration. In fact, it has been observed that an increase of Mg in the active region does improve the internal quantum efficiency until a maximum is reached beyond that a detrimental effect kicks in, increasing the non-radiative recombination.

[0064] FIG. 5 illustrates an example of a doping process in an optoelectronic device in accordance with the proposed principle together. The diagram also illustrates the course of the doping over the thickness of the various layers, the respective bandgap and the concentration level of the dopant. Actual doping levels may vary as the dopants may diffuse into adjacent layers. Consequently, the embodiment is an exemplary embodiment and can be varied with different layers, dopant levels and so forth.

[0065] The n-type side comprises a thickness of approximately 1500 nm and includes an aluminium content in the material with x in the range of 0.7 to 1.0. The n-doped layer comprises a dopant level with an n-type dopant DP1, using for instance tellurium or silicon. As shown in the diagram, the dopant concentration may vary and generally decreases when getting closer to the active region, starting with a dopant level of approximately 2e18 atoms/cm.sup.3. Following the n-type carrier transport layer 20 and 20a on the n-side, the active region 30 starts at approximately 2,500 nm. The active region 30 comprising a plurality of quantum barrier and quantum well layers is located adjacent to the undoped region.

[0066] As shown in the diagram, a second dopant DP2 with a lower concentration in the range of a few 10.sup.16 atoms/cm.sup.3 is added during the deposition and manufacturing of the active region, that is during growth of the various barrier and quantum well layers. This additional dopant comprises a slightly larger concentration than the unintentional existing dopant DP4, which mainly comprises of impurities and crystal defects. The unintentional doping DP4 lies in the range below 1e16 atoms/cm.sup.3 and as such this is an order of magnitude lower than the intentional low doping level of material DP2.

[0067] The material used for DP2 may comprise Zn or Mg for p-type dopants as well as silicon, Si or tellurium Te as n-type dopants. It has been found that magnesium as a p-type dopant is beneficial in terms of performance increase of the respective device. Adjacent to the active region 30, a p-doped layer structure is grown. The p-type layer structure includes a second dopant DP3 which raises from an initial concentration level of approximately 1e17 atoms/cm.sup.3 to about 1e18 atoms/cm.sup.3. Consequently the doping concentration between the n-side 30, 30a and the p-side 40,40a may not only vary with regards to their minimum and maximum level, but may also differ in this actual course of doping as illustrated.

[0068] FIG. 6 illustrates a more detailed view of an active region with a plurality of barrier and quantum well layers in accordance with some aspects of the proposed principle. The thickness of the quantum well layers as well as barrier layers are approximately 7 nm, and as such, barrier layers and quantum well layer have equal distance to each other. However, in some instances and embodiments, the thickness of the quantum well layers can be smaller than the corresponding thickness of adjacent barrier layers.

[0069] The aluminium content in the quantum well layer comprises a value x in the range between 0 and 0.5, while the aluminium content in the barrier layers reaches about x=0.8. Consequently, the AlGaInP barrier layers with the large Al content provides a band gap of approximately 2.4 eV, while the band gap within the quantum well layers lies at about 1.9 eV.

[0070] In the lower portion of the FIG. 6, the doping level for the various barrier and quantum well layers is illustrated. As in the previous examples, the doping with Mg, Zn, Te or Si is only performed during growth of the respective barrier layers, with adding the dopant shortly after growth of the respective layer has begun and stopping the dopant shortly before end of growth.

[0071] No dopant is added during the growth of the material forming the quantum well layer. Consequently, the concentration of the dopant varies between the different layers. Furthermore, different dopant concentrations were selected for the barrier layers. In particular, the first two barrier layers 31b and 31c on the left side (close to layer 20a) comprises the same doping level as the barrier layer 31c and 31b at the right side adjacent to the p-type doped carrier layer. The concentration level of dopant for those barrier layers is in the range of 2e16 atoms/cm.sup.3. The two centrally arranged barrier layers 31d comprise a higher concentration of dopant in the range of about 4e16 atoms/cm.sup.3. It becomes apparent that the doping level in the quantum well layer changes due to diffusion of the dopant from the barrier layers into the quantum well layers. As a result, the dopant concentration in the quantum well layer 32b decreases from the adjacent dopant concentration 2016 atoms/cm.sup.3 to approximately 1e16 atoms/cm.sup.3. The adjacent quantum well layers 32c comprise an increasing dopant concentration in a substantial linear manner from 2e16 atoms/cm.sup.3 to 4e16 atoms/cm.sup.3. This is due to the different doping level between the barrier layer 31d and 31c, respectively. Outside of the outermost quantum well layer 32a the dopant concentration continuously decreases.

[0072] This example illustrates the various implementation possibilities for a lower level of doping in the active region of an optoelectronic device in accordance with the present invention. As can be seen from the examples, due to diffusion the dopant concentration may vary in the respective individual barrier and quantum well layers and is inhomogeneous throughout the barrier. Still, the diffusion can be used to provide a desired concentration profile, as illustrated in FIG. 6 and FIG. 2, respectively.