METHOD FOR OPERATING A MULTIPLE PARTICLE BEAM SYSTEM WHILE ALTERING THE NUMERICAL APERTURE, ASSOCIATED COMPUTER PROGRAM PRODUCT AND MULTIPLE PARTICLE BEAM SYSTEM

Abstract

A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.

Claims

1. An electron-beam device, comprising upper-column electron optics and lower-column electron optics comprising: an aperture array to divide an electron beam into a plurality of electron beamlets; a lens array comprising a plurality of lenses to adjust the focus of the plurality of electron beamlets, wherein respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets; and a first macro-lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array; wherein the lens array is disposed between the aperture array and the first macro-lens.

2. The electron-beam device of claim 1, further comprising a second macro-lens to collimate the plurality of beamlets and provide the plurality of beamlets to the lower-column electron optics, wherein the first macro-lens is disposed between the lens array and the second macro-lens.

3. The electron-beam device of claim 2, wherein the second macro-lens comprises a magnetic lens.

4. The electron-beam device of claim 2, wherein the lower-column electron optics comprise a field lens and an objective lens, the field lens being configured to produce a cross-over of the electron beamlets between the transfer lens and the objective lens.

5. The electron-beam device of claim 1, wherein: the lens array comprises: a first plate having a first plurality of bores corresponding to respective apertures in the aperture array, a second plate having a second plurality of bores corresponding to the first plurality of bores and the respective apertures in the aperture array, and a third plate having a bore to allow passage of the plurality of beamlets; and the first macro-lens comprises: the third plate.

6. The electron-beam device of claim 5, wherein the first plate is grounded; the second plate is configurable to be biased to provide a beam-individual focal length change to the electron beamlets; and the third plate is configurable to be positively biased.

7. The electron-beam device of claim 1, wherein the lens array is configurable to focus the electron beamlets; and the first macro lens is configurable to defocus the plurality of beamlets as focused by the lens array.

8. A method, comprising, in the upper-column electron optics of an electron-beam device: dividing an electron beam into a plurality of electron beamlets using an aperture array; adjusting the focus of the plurality of electron beamlets using a lens array comprising a plurality of lenses, comprising using respective lenses of the plurality of lenses to adjust the focus of respective electron beamlets of the plurality of electron beamlets; and adjusting the focus of the plurality of electron beamlets using a first macro-lens, wherein: the first macro-lens lens adjusts the focus of the plurality of electron beamlets in a manner opposite to the lens array; and the lens array is disposed between the aperture array and the first macro-lens.

9. The method of claim 8, further comprising, in the upper-column electron optics: collimating the plurality of beamlets; and providing the collimated plurality of beamlets to lower-column electron optics of the electron-beam device.

10. The method of claim 9, wherein: adjusting the focus of the plurality of electron beamlets using the lens array comprises focusing the plurality of electron beamlets; and adjusting the focus of the plurality of electron beamlets using the first macro-lens comprises defocusing the plurality of electron beamlets as focused by the lens array.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0101] The disclosure will be understood even better with reference to the accompanying figures, in which:

[0102] FIG. 1: shows a multi-beam particle microscope in a schematic illustration;

[0103] FIGS. 2A-2B: show two multiple particle beam systems with different multi-beam generators in a schematic illustration;

[0104] FIGS. 3A-B: illustrate the beam path of the particle beams of the system from FIG. 2A at the beginning and at the end of a setting procedure for the numerical aperture;

[0105] FIGS. 4A-4B: illustrate the beam path of the particle beams at two different working points of the system from FIG. 2B;

[0106] FIG. 5: shows the system from FIG. 2A with subsequent imaging of secondary electrons onto a particle multi-detector;

[0107] FIG. 6: shows the system from FIG. 2B with subsequent imaging of secondary electrons onto a particle multi-detector;

[0108] FIG. 7: schematically illustrates the beam path of individual particle beams when passing through a multi-lens array;

[0109] FIG. 8: schematically illustrates the change in the pitch in the intermediate image plane in the case of an altered setting of the multi-lens array from FIG. 7;

[0110] FIG. 9: schematically illustrates the beam path of individual particle beams when passing through a multi-lens array with an additional micro-lens array; and

[0111] FIG. 10: shows a flowchart for optimizing the resolution.

DETAILED DESCRIPTION

[0112] FIG. 1 is a schematic illustration of a particle beam system 1 in the form of a multi-beam particle microscope 1, which uses a multiplicity of particle beams. The particle beam system 1 generates a multiplicity of particle beams which impinge an object to be examined in order to generate there interaction products, e.g. secondary electrons, which emanate from the object and are subsequently detected. The particle beam system 1 is of the scanning electron microscope (SEM) type, which uses a plurality of primary particle beams 3 which are incident on a surface of the object 7 at a plurality of locations 5 and generate there a plurality of electron beam spots, or spots, that are spatially separated from one another. The object 7 to be examined can be of any desired type, e.g. a semiconductor wafer or a biological sample, and include an arrangement of miniaturized elements or the like. The surface of the object 7 is disposed in a first plane 101 (object plane) of an objective lens 102 of an objective lens system 100.

[0113] The enlarged excerpt I.sub.1 in FIG. 1 shows a plan view of the object plane 101 having a regular rectangular field 103 of sites of incidence 5 formed in the first plane 101. In FIG. 1, the number of sites of incidence is 25, which form a 5?5 field 103. The number 25 of sites of incidence is a number chosen for reasons of simplified illustration. In practice, the number of beams, and hence the number of sites of incidence, can be chosen to be significantly greater, such as, for example, 20?30, 100?100 and the like.

[0114] In the embodiment illustrated, the field 103 of sites of incidence 5 is a substantially regular rectangular field having a constant pitch P1 between adjacent sites of incidence. Exemplary values of the pitch P1 are 1 micrometer, 10 micrometers and 40 micrometers. However, it is also possible for the field 103 to have other symmetries, such as a hexagonal symmetry, for example.

[0115] A diameter of the beam spots shaped in the first plane 101 can be small. Exemplary values of the diameter are 1 nanometer, 5 nanometers, 10 nanometers, 100 nanometers and 200 nanometers. The focusing of the particle beams 3 for shaping the beam spots 5 is carried out by the objective lens system 100.

[0116] The primary particles impinging the object generate interaction products, e.g. secondary electrons, back-scattered electrons or primary particles that have experienced a reversal of movement for other reasons, which emanate from the surface of the object 7 or from the first plane 101. The interaction products emanating from the surface of the object 7 are shaped by the objective lens 102 to form secondary particle beams 9. The particle beam system 1 provides a particle beam path 11 for supplying the multiplicity of secondary particle beams 9 to a detector system 200. The detector system 200 includes a particle optical unit having a projection lens 205 for directing the secondary particle beams 9 onto a particle multi-detector 209.

[0117] The excerpt I.sub.2 in FIG. 1 shows a plan view of the plane 211, in which individual detection regions of the particle multi-detector 209 on which the secondary particle beams 9 are incident at the sites 213 are located. The sites of incidence 213 lie in a field 217 with a regular pitch P.sub.2 with respect to one another. Exemplary values of the pitch P.sub.2 are 10 micrometers, 100 micrometers and 200 micrometers.

[0118] The primary particle beams 3 are generated in a beam generating apparatus 300 including at least one particle source 301 (e.g., an electron source), at least one collimation lens 303, a multi-aperture arrangement 305 and a field lens 307, or a field lens system made of a plurality of field lenses. The particle source 301 generates a diverging particle beam 309, which is collimated or at least substantially collimated by the collimation lens 303 in order to shape a beam 311 which illuminates the multi-aperture arrangement 305.

[0119] The excerpt I.sub.3 in FIG. 1 shows a plan view of the multi-aperture arrangement 305. The multi-aperture arrangement 305 includes a multi-aperture plate 313, which has a plurality of openings or apertures 315 formed therein. Midpoints 317 of the openings 315 are disposed in a field 319 that is imaged onto the field 103 formed by the beam spots 5 in the object plane 101. A pitch P.sub.3 between the midpoints 317 of the apertures 315 can have exemplary values of 5 micrometers, 100 micrometers and 200 micrometers. The diameters D of the apertures 315 are smaller than the pitch P.sub.3 between the midpoints of the apertures. Exemplary values of the diameters D are 0.2?P.sub.3, 0.4?P.sub.3 and 0.8?P.sub.3. Particles of the illuminating particle beam 311 pass through the apertures 315 and form particle beams 3. Particles of the illuminating beam 311 which impinge the plate 313 are intercepted by the latter and do not contribute to the formation of the particle beams 3.

[0120] On account of an applied electrostatic field, the multi-aperture arrangement 305 focuses each of the particle beams 3 in such a way that beam foci 323 are formed in a plane 325. Alternatively, the beam foci 323 can be virtual. A diameter of the beam foci 323 can be, for example, 10 nanometers, 100 nanometers and 1 micrometer.

[0121] The field lens 307 and the objective lens 102 provide a first imaging particle optical unit for imaging the plane 325, in which the beam foci 323 are formed, onto the first plane 101 such that a field 103 of sites of incidence 5 or beam spots arises there. Should a surface of the object 7 be disposed in the first plane, the beam spots are correspondingly formed on the object surface.

[0122] The objective lens 102 and the projection lens arrangement 205 provide a second imaging particle optical unit for imaging the first plane 101 onto the detection plane 211. The objective lens 102 is thus a lens which is part of both the first and the second particle optical unit, while the field lens 307 belongs only to the first particle optical unit and the projection lens 205 belongs only to the second particle optical unit.

[0123] A beam switch 400 is disposed in the beam path of the first particle optical unit between the multi-aperture arrangement 305 and the objective lens system 100. The beam switch 400 is also part of the second optical unit in the beam path between the objective lens system 100 and the detector system 200.

[0124] Further information relating to such multiple particle beam systems and components used therein, such as, for instance, particle sources, multi-aperture plate and lenses, can be obtained from the international patent applications WO 2005/024881, WO 2007/028595, WO 2007/028596, WO 2011/124352 and WO 2007/060017 and the German patent applications having the application numbers DE 10 2013 026 113.4 and DE 10 2013 014 976.2, the disclosure of which in the full scope thereof is incorporated by reference in the present application.

[0125] The multiple particle beam system furthermore has a computer system 10 configured both for controlling the individual particle-optical components of the multiple particle beam system and for evaluating and analyzing the signals obtained by the multi-detector 209. In this case, the computer system 10 can be constructed from a plurality of individual computers or components.

[0126] FIGS. 2A-2B show two multiple particle beam systems with different multi-beam generators in a schematic illustration. Here, FIG. 2A shows a system with a multi-beam generator 350, which has a multi-lens array consisting of a multi-aperture plate 351 and a counter electrode 352. By contrast, the system as per FIG. 2B includes a multi-beam generator 360, which has a multi-aperture plate 361 and a multi-deflector array 362.

[0127] Initially, the beam path of the particles is similar in both cases: particles, e.g., electrons, emerge from the particle beam source 301, the so-called tip. Here, proceeding from the particle source 301 in FIGS. 2A-2B (and in subsequent FIGS. 3 to 6), the optical axis of the system extends in perpendicular fashion from top to bottom. The particles emerging from the particle beam source 301 pass through a condenser lens system 303 and then arrive as a substantially parallelized particle beam bundle at the multi-beam generator 350 (FIG. 2A) or as a slightly divergent or convergent particle beam bundle at the multi-beam generator 360 (FIG. 2B shows the divergent case). Thus, the individual particle beams are generated in the multi-beam generator 350, 360. The generation mechanism is different, depending on the multi-beam generator type 350, 360 employed.

[0128] In the multi-beam generator 350, which includes the multi-lens array consisting of a multi-aperture plate 351 and a counter electrode 352, the individual particle beams 3 formed when passing through the multi-aperture plate 351 are focused and pulled apart slightly. To this end, a voltage difference is applied between the multi-aperture plate 351 and a counter electrode 352. In the process, the individual particle beams are focused on the foci 323 in a plane E1 that is disposed downstream (on the side facing away from the particle beam source 301) of the multi-aperture plate 350 as seen in the beam propagation direction and a real intermediate image of the foci 323 arises in the plane E1. Here, the foci 323 form multiple images of the real particle beam source 301. Below, these images can be considered to be virtual particle beam sources 323. It is the functionality of pulling apart the individual particle beams 3 that allows the multi-beam generator 350 to change the beam pitch of the individual particle beams in the plane E1 or, expressed differently, the pitch between the foci 323.

[0129] Below, the first plane E1 with the foci 323 is imaged in particle-optical fashion into the second plane E2, which is formed here by the surface of the sample 7. In addition to a field lens system 307, which has three mutually independently adjustable lenses, the beam switch 400 and the objective lens 102, an additional field lens 370 is located in the beam path between the planes E1 and E2.

[0130] The system illustrated in FIG. 2B has a multi-deflector array in the multi-beam generator 360 for generating a multiplicity of divergent individual particle beams 3. If the individual particle beams 3 are tracked back in the direction of the particle beam source 301, these appear to have their origin in the foci 323 in an image plane E1, which is situated on the side of the particle beam source 301 as seen from the multi-aperture plate 360. Therefore, this case is referred to as having virtual foci 323 and a virtual intermediate image plane E1. Like in the exemplary embodiment of FIG. 2A, the foci 323 can be considered to be virtual particle sources and images of the real particle beam source 301. In the embodiment variant as per FIG. 2B, too, the virtual particle sources 323 are imaged onto the plane E2, in which the surface of the object 7 should be positioned, by particle-optical imaging. Here, too, an additional field lens 370 is provided in the beam path of the individual particle beams 3 in addition to a field lens system 307. In the embodiment in FIG. 2B, setting the deflection strength of the individual deflectors in the multi-deflector array allows the beam pitch of the individual particle beams to be altered in the plane E1 or, expressed differently, allows the pitch between the foci 323 to be altered.

[0131] The multi-beam generator can also have a combination of a multi-lens array and a multi-deflector array (not illustrated). It is also possible for real foci 323 to be formed with the aid of a multi-deflector array, for example by virtue of the primary individual particle beam impinging the multi-beam generator 360 in convergent fashion. However, it is important that the multi-beam generator 350, 360 allows the pitches of the foci 323 of the individual particle beams 3 to be changed.

[0132] The numerical aperture in the object plane E2 is adjustable in the two cases shown in FIGS. 2A and 2B. Here, the pitch between the foci 323 in the intermediate image plane E1 is set with the aid of the multi-beam generator 350, 360. In the embodiment shown in FIG. 2A, the pitches of the foci 323 are set by a suitable change in the lens effect of the electrostatic lens, which is formed by the multi-aperture plate 351 and the counter electrode 352, by way of changing the potential difference between the multi-aperture plate 351 and the counter electrode 352. In the embodiment illustrated in FIG. 2B, setting the pitches between the foci 323 is implemented by a suitable change of the deflections by the multi-deflector array 362. At the same time, at least one particle-optical component in the system is set in such a way that there is no change in the beam pitch in the object plane E2, i.e., in Pitch2.

[0133] In the shown example, the additional field lens 370 serves to set or keep the focus in the object plane E2. Generally, changing the pitches of the foci 323 is also accompanied by a displacement in the real or virtual intermediate image plane E1. However, this displacement of the real or virtual intermediate image plane E1 along the optical axis is small in comparison with the obtained change in the pitches of the foci 323. The degree of freedom involved to ensure the imaging of the intermediate image plane E1 into the object plane E2 while simultaneously maintaining the orientation of the foci in the object plane (rotation), the pitch of the foci in the object plane (Pitch2) and the telecentricity conditions of the individual particle beams 3, 3a incident in the object plane E2 is obtained by the additional field lens 370. Here, the position of the additional field lens 370 in the beam path is not fixedly prescribed.

[0134] In the present disclosure, the product of numerical aperture and pitch can be changed in the intermediate image plane E1 by changing the lens effect of the lens consisting of the multi-aperture plate 351 and the counter electrode 352. This is possible because the otherwise conventional paraxial approximations are not applicable to the effect of this system made of multi-aperture plate 351 and counter electrode 352.

[0135] FIGS. 3A-3B illustrate the beam path of the particle beams in the case of two differently set numerical apertures of the system from FIG. 2A. In the example shown, these two different numerical apertures are present at the start of a setting procedure and at the end of a setting procedure for the numerical aperture. Alternatively, optimally set numerical apertures could be found at two different working points of the system using the examples shown in FIGS. 3A and 3B.

[0136] The multi-beam generator 350 has a multi-lens array consisting of a multi-aperture plate 351 and a counter electrode 352. FIG. 3A illustrates the beam path of the individual particle beams 3 at the start of the setting procedure; the example shown in FIG. 3B shows the illustrated system at the end of the setting procedure. The beam path at the end of the setting procedure is illustrated for the individual particle beams 3a, which are drawn using dash-dotted lines. At the end of the setting procedure, the numerical aperture should be set in such a way that a best-possible resolution is obtained within the scope of the particle-optical imaging. Here, the focal diameter of the individual particle beams 3a on the object is minimized for an optimal setting. A person skilled in the art is aware of various procedures for determining the resolution. By way of example, work can be carried out with the aid of a test sample which has a defined sharp edge. In a particle-optical image, this edge no longer appears quite as sharp but is smeared on account of the finite focal diameter of the individual particle beams, from which it is possible to draw conclusions about the focal diameter of the individual particle beams. The resolution achievable by the multiple particle beam system can be defined by the focal diameter of the individual particle beams.

[0137] In FIG. 3B, it is possible to identify the following: The images 323a of the particle beam source 301 generated in the plane E1 are now situated further apart than in FIG. 3A. Here, the virtual particle sources 323a are identified by stars and their displaced position with respect to the beam foci 323 at the start of the setting procedure of the system is illustrated. The system made of the additional field lens 370 with the three-lens field lens system 307 (thus, the system has four lenses overall in this case) is set such that the individual particle beams 3a are incident in the plane E2 or object plane while maintaining the telecentricity conditions (FIG. 3B illustrates telecentric incidence of the individual particle beams 3a), albeit with a greater numerical aperture (identifiable from the expanded beam cone of the individual particle beams 3a between the objective lens 102 and the plane E2). This expansion of the beam cone corresponds to the change in the numerical aperture, which is indicated in the figure by the double-headed arrow and the NAV label. Nevertheless, the beam pitch between the individual particle beams 3, 3a in the plane E2 remains unchanged (Pitch2 remains constant). Furthermore, the orientation of the individual particle beams 3, 3a around the optical axis in the plane E2 and the focusing of the individual particle beams 3, 3a in the plane E2 can optionally be maintained unchanged.

[0138] Moreover, all other particle-optical parameters p, not explicitly mentioned, which characterize the particle-optical imaging, in particular characterize this completely, can also be kept constant. Thus, in that case, all that is changed is the beam pitch between adjacent individual particle beams in the first plane E1 and the numerical aperture of the multi-beam particle optical unit in relation to the second plane E2 and, optionally, variables dependent thereon.

[0139] Except for the effect settings on the particle-optical components, no further changes were undertaken in the system in FIGS. 3A-3B. Thus, the change in the numerical aperture can be brought about purely by setting the effects or excitations. In particular, no structural modifications are involved; in particular, no multi-beam generator or any of its components need(s) to be structurally modified, moved or even replaced.

[0140] FIG. 4A-4B illustrate the beam path of the particle beams at two different working points of the system from FIG. 2B, each with a finally set numerical aperture. Here, a multi-deflector array 362 in combination with a multi-aperture plate 361 is used as a multi-beam generator 360. The beam path at the first working point is illustrated using a solid line (individual particle beams 3); the beam path at the second working point is illustrated once again using a dash-dotted line (individual particle beams 3a).

[0141] In this embodiment variant of the disclosure, too, the pitch of the individual particle beams in the virtual intermediate image plane E1 is varied by a change in the deflections obtained by the multi-deflector array 362 (Pitch1 is varied). The foci 323a at the second working point are indicated by stars. The foci 323a are imaged in particle-optical fashion onto the surface of the sample 7 or into the plane E2. The system made of the additional field lens 370 with the two-lens field lens system 307 (thus, the system has three lenses overall in this case) is set such that the individual particle beams 3a are incident on the plane E2 or object surface while maintaining the telecentricity conditions (FIG. 4B once again illustrates telecentric incidence of the individual particle beams 3a), albeit with a greater numerical aperture. Here, the beam pitch between the individual particle beams 3, 3a remains unchanged (Pitch2 is constant). Here, too, the particle beam cone impinging the sample 7 is expanded in comparison with the first working point. Here, too, the numerical aperture is thus altered, as indicated by the double-headed arrow or the label NAV in the drawing. Furthermore, the orientation of the individual particle beams 3, 3a around the optical axis in the plane E2 and the focusing of the individual particle beams 3, 3a in the plane E2 can optionally once again be maintained unchanged.

[0142] The working point setting is altered in the system of FIGS. 4A-4B. Here, for example, a working point can be defined by the beam current intensity, the landing energy, the position of the object (as a result of altering the stage position) and/or the employed individual beam source (the tip). In general, other definitions are also conceivable and apparent to a person skilled in the art. However, with the exception of settings of the working point, no further alterations are then undertaken at the particle-optical components, apart from the effect settings, for the purposes of setting the numerical aperture. Thus, the change in the numerical aperture can be brought about at a different working point, too, purely by setting the effects or excitations. No structural modifications are involved; in particular, no multi-beam generator or any of its components need(s) to be structurally modified, moved or even replaced.

[0143] FIGS. 5 and 6 show, once again, the multiple particle beam systems of FIGS. 3 and 4, respectively, to be precise in combination with a particle multi-detector 209 in each case. The secondary electrons emerging from the sample 7 are deflected in spatially resolved fashion in the direction of the particle multi-detector 209 by way of the beam switch 400. In the process, the secondary particle beams 9 are incident on the particle multi-detector 209 after having passed through the projection lens system 205 and after having passed through an aperture stop 210. It should be noted that this is a very schematic illustration. With respect to details, reference is made to the documents cited at the outset.

[0144] In the dashed circle in both FIG. 5 and FIG. 6, an excerpt from the beam path in the multiple particle beam system is additionally shown in a magnified illustration, which once again elucidates the variation in the numerical aperture by the expansion of the particle beam cone. Thus, the numerical aperture is altered; this is indicated by the double-headed arrow labeled NAV. However, the points of incidence of the beams 3 and 3a on the sample 7 remain unchanged in the process. Pitch2 is not varied.

[0145] Further embodiments of the disclosure are described below and, in particular, explanations are provided as to how the Helmholtz-Lagrange invariant HLI can be altered according to the disclosure.

[0146] It is the object to alter the numerical aperture (NA) of the individual beams without changing the beam pitch of the individual particle beams in the object plane as a result thereof. The selective increase of the numerical aperture has the desirable effect of achieving a smaller spot size of the illumination spots of the individual beams on the sample in the process, and hence of improving the resolution during the imaging if the aberrations in the imaging optical unit do not become too large. Therefore, altering the numerical aperture, in particular increasing the latter, is advantageous, in particular, for particle beam systems with an improved correction, for example with reduced beam dispersion or reduced spherical aberration.

[0147] Unlike in individual beam systems, the numerical aperture or the pitch of the individual beams cannot simply be altered in multi-beam systems with a multiplicity of individual beams in a grid arrangement. The beam pitch or pitch of the grid arrangement of the multiplicity of individual beams is fixedly specified by way of a multi-aperture plate. The multi-aperture plate generates a multiplicity of beam focus points in an intermediate image plane, for example N focus points in one direction with pitch P1 and a numerical aperture of an individual beam NA1. If the imaging system disposed downstream of the multi-aperture plate has an imaging scale M1, the numerical aperture in the image plane is NA2=NA1/M1??{square root over (U1/U2)} and the pitch P.sub.2 on the sample is P2=M1*P1. Thus, pitch and NA are coupled to one another and cannot be altered independently of one another. Therefore, the problem of NA change occurs in the case of multi-beam microscopes, which image a multiplicity of individual beams through a common optical unit. An NA change generally leads to a change in the beam pitch, which is undesirable. Therefore, conventional multi-beam microscopes do not allow changing the numerical aperture without changing the pitch at the same time.

[0148] It is advantageous to distribute as many beams as possible over a specified area. However, the detection path must separate the associated secondary beams, in particular while taking account of the energy spectra of the secondary electrons (SE). This yields a minimum pitch. This minimum pitch depends on the performance (aberrations) of the imaging optical unit, the sample (energy spectrum of the SE) and the contrasts to be imaged (filtering of the energy spectra of the SE). There are critical samples involving a greater pitch and good-tempered samples where work can be carried out with a smaller pitch. Flexibility that is adaptable to the sample is also advantageous here and the exemplary embodiments of the disclosure render it possible to set the pitch of the grid arrangement and the numerical aperture of the individual beams independently of one another. A special case where the pitch is kept constant is considered below. In an equivalent embodiment, the numerical aperture is kept constant and the pitch is altered. In a further equivalent embodiment, the numerical aperture and pitch are altered independently of one another; for example, both are increased or reduced.

[0149] A description with U1=U2 follows, which is why the factor ?{square root over (U1/U2)} is dispensed with in the following. An extension with U1 not equal to U2 is within the grasp of a person skilled in the art without involving an inventive step.

[0150] Beyond the multi-aperture plate there is an imaging system, which images the multiplicity of beam focus points into an image plane in which the object is disposed. The imaging system consists of successively disposed electron-optical imaging components and forms a conservative system with the Helmholtz-Lagrange invariant HLI=NA1?N?P1??{square root over (U1)} as conserved quantity. A characteristic of a so-called conservative imaging system is that the HLI remains unchanged; i.e., a change in the numerical aperture on the sample as a result of changing the imaging scale always also changes the pitch of the multiplicity of individual beams in the case of an unchanged voltage.

[0151] Changing the NA without changing the pitch and without changing the voltage ratios U1/U2 therefore involves changing HLI1 into HLI2.

[0152] One solution for changing the HLI1 lies in providing a multi-aperture plate with a different pitch, for example by way of an exchange. It is an object of the disclosure to provide an NA change, for example, without changing the pitch and without exchanging the multi-aperture plate.

[0153] According to the disclosure, the object is achieved by an inventive combination of a novel multi-aperture plate or a novel multi-aperture plate arrangement (a novel multi-beam generator) with a downstream electron beam optical unit which has been configured according to the disclosure.

[0154] According to an embodiment, a multi-aperture plate with an array of deflectors enables an alteration of the beam pitch without a change in NA. The deflectors set a pitch P3 without changing NA1. This yields HLI3=P3?N?NA1. As a result of the downstream electron beam optical unit which is configured according to the disclosure, a change in the imaging scale from M1 to M2=P2/P3 sets the pitch P2, desired constant, on the sample and, in the process, an altered NA3=NA1/M2 is set at the same time, where NA3=HLI3/(N?P3).

[0155] According to an embodiment, the multi-aperture plate enables an NA change without a pitch change by way of beam shaping with a variable NA.

[0156] In one configuration, the multi-aperture plate enables an NA change without a pitch change by way of an electron-optical lens, which is disposed downstream of the multi-aperture plate. The lens disposed downstream of the multi-aperture plate simultaneously brings about a change, for example an increase, in the numerical aperture to NA6 and an aligned change, for example an increase, in the pitch to P6 such that HLI6=P6?N?NA6 arises, wherein HLI6 is not equal to HLI1. The subsequent electron-optical imaging system is used to set an imaging scale M6 such that a pitch of P2=P6?M6 arises in the image plane, with the correspondingly modified aperture NA7=NA6/M6 being obtained.

[0157] FIG. 7 schematically illustrates the beam path of individual particle beams 3 when passing through a multi-lens array with a multi-aperture plate 351 and with an electronic lens 352 as a counter electrode and FIG. 8 schematically illustrates the change in the pitch in the intermediate image plane E1 in the case of an altered setting of the multi-lens array of FIG. 7. According to this exemplary embodiment, the pitch is changed, increased in this case, from P1 to P6 by way of an altered actuation of the combined lens. The pitch and the numerical aperture change in the same direction; if the pitch increases, so does the numerical aperture. According to the example shown, the multi-aperture plate 351 can be at ground potential, for example, and a high voltage of a few kV, for example a voltage between 10 kV and 20 kV, for instance approximately 13 kV, 14 kV, 15 kV, 16 kV or 17 kV can be applied to the electronic lens 352. If this high voltage is increased, there is increase both in the refractive power of the micro-lenses 351 and in the refractive power of the macro-lens 352; consequently, the focal length of the micro-lenses 351 shortens (NA increase) and the pitch P1 increases to the pitch P6 by way of the macro-lens 352. The negative macro-lens 352 slightly increases the focal length again and there is a slight shift in the intermediate image plane E1; however, the change in pitch from P1 to P6 is dominant. As a result, the Helmholtz-Lagrange invariant increases.

[0158] In one configuration, the multi-aperture plate 351 enables an NA change without a change in pitch by way of an additional independent focal length change via a multiplicity of micro-lenses 353 in the micro-optical unit. FIG. 9 schematically illustrates the beam path of individual particle beams 3 when passing through a multi-lens array with an additional micro-lens array 353. To this end, a micro-lens array 353 is provided in the micro-optical unit in addition to the multi-aperture plate 351 and in addition to the electron-optical lens 352. NA5 is obtained following a change in focal length. By way of example, using the macro-lens 352 with a voltage HV5, the pitch in the intermediate image plane E1 is set to P5 and HLI5=P5?N?NA5 is obtained; the change in focal length is accompanied at the same time by a change in the focal position. By way of example, the additional micro-lenses of the micro-lens array 353 shorten the focal length of the individual particle beams 3 in the case of the same design of the combined lens of multi-aperture plate 351 and counter electrode 352; hence, this leads to an independent pitch and NA change. The pitch P2=M1?P1, desired constant, is set by way of suitable afocal refocusing via variable electron-optical lenses of a downstream electron beam optical unit which is configured according to the disclosure, with the correspondingly modified aperture NA4=NA5/M1 being obtained.

[0159] In the embodiment variant illustrated in FIG. 9, it is additionally or alternatively also possible that the variation of the pitch of the individual particle beams 3 in the first plane E1 is substantially set by setting an effect at the micro-lens array 353. Thus, voltages of, e.g., several hundred volts can be applied to the micro-lens array 353, for example approximately 100 V, 200 V or 300 V. A variation in these voltages changes the lens effects and also changes the pitch set in the intermediate image plane E1. Even though high voltages are not normally used in micro-optics, it is possible to obtain desired focal length changes and desired changes in the pitch in the intermediate image plane E1 since there are electron-optical lenses which have a comparatively high refractive power despite relatively low voltages applied. By way of example, an option for realization is represented by quadrupole lens sequences as disclosed, for example, in the German patent application with the application number 10 2020 107 738.6; the disclosure of the German patent application 10 2020 107 738.6 is incorporated, in the entirety thereof, in this patent application by reference. Other realizations are also possible.

[0160] Equivalently, the presented approach can also bring about a change in the pitch P while the numerical aperture remains unchanged. Characteristic of the disclosure is a second change from a first numerical aperture NA1 into a second numerical aperture NA2 with a simultaneous first change of a first pitch P1 into a second pitch P2, wherein the first ratio of the first change of the pitch P2/P1 from the inverted, second ratio of the second change in the numerical apertures NA1/NA2 from the imaging scale M of the projection system disposed downstream of a multi-aperture plate changes by more than the ratio of the roots of the second voltage in the image plane and of the first voltages in a field plane disposed downstream of the multi-aperture plate:

[0161] By contrast, in the case of a simple change of the imaging scale M, the second change is implemented precisely with the ratio of the roots of the second voltage in the image plane and of the first voltages in a field plane disposed downstream of the multi-aperture plate, since the following applies to the projection system with an imaging scale M:

P2=M?P1 and

NA2??{square root over (U2)}=NA1??{square root over (U1)}/M [0162] and consequently the following applies to the first ratio P2/P1=M [0163] and the following applies to the second ratio NA1/NA2=M??{square root over (U2/U1)}.

[0164] FIG. 10 shows a flowchart for optimizing the resolution during particle-optical imaging using the method according to the disclosure. In the process, the numerical aperture is also changed automatically. The assumption is initially made that the overall system has already been set for a first working point. Thus, in this case, all effects of the particle-optical components are already known for the first working point which, for example, may be characterized by the beam current intensity and/or the landing energy of the particles on the sample.

[0165] In a first step S1, the working point is now changed; i.e., a second or further working point is defined and set accordingly. Then, the resolution which is obtained with the already preset effects of the particle-optical components is measured in step S2. Now, in a further step S3, the beam pitch between adjacent individual particle beams in the first plane E1, i.e., in the intermediate image, is varied (variation Pitch1). The intermediate image can be either a virtual intermediate image or a real intermediate image. Here, the beam pitch is varied by way of appropriate settings on the multi-beam generator 350, 360.

[0166] Now, the remaining particle-optical components of interest are set at the second working point in a further method step S4 such that these remaining particle-optical parameters remain constant or have the same values as when setting the overall system at the first working point. The setting (readjustment) of the remaining particle-optical components, involved to this end, for keeping constant all remaining particle-optical parameters is advantageously implemented by way of an iterative process. A plurality of steps of this iterative process are shown in exemplary fashion in the large box of FIG. 10. The object of this setting is that the beam pitch between adjacent individual particle beams in the second plane E2, i.e., on the sample, remains unchanged in comparison with the beam pitch at the first working point (Pitch2 constant). Further objects can be that the focusing of the individual particle beams in the plane E2 and/or the telecentricity conditions of the individual particle beams upon incidence of the individual particle beams into the objective lens 102 and/or the orientation of the individual particle beams about the optical axis (rotation) remain constant; the readjustment is implemented in step S5 of the flowchart. The telecentricity is set in step S6, if desired, the rotation is set in step S7, if desired, and the focus is set in step S8, if desired.

[0167] By varying the beam pitch between the individual particle beams 3, 3a at the intermediate image plane E1 (variation Pitch1) and by simultaneously keeping constant the other particle-optical parameters (in particular the beam pitch of the individual particle beams on the object (Pitch2), the numerical aperture at the intermediate image (no structural modification of the multi-beam generator) and the electric potentials U1 and U2), the numerical aperture NA2 is varied in the plane E2 and consequently at the object in the process, and the numerical aperture can be optimized.

[0168] Following each iteration pass as described above, a check is carried out by measurement as to whether the resolution is now optimal (step S9). If this is the case, the found effects for the second working point are stored in a lookup table. Should the resolution not be optimal yet, the beam pitch between adjacent individual particle beams in the first plane E1 is varied anew in step S3. Subsequently, different settings are then set for the particle-optical components and the resolution obtained in that case is measured. This is repeated until a setting is found in which the resolution is optimal and consequently maximal or at least meets predefined target desired properties.

[0169] It is possible to omit one or more method steps from FIG. 10 or to carry out method steps in a different sequence. In this respect, the example shown in FIG. 10 should not be construed as restrictive.