Organic light emitting devices

Abstract

The present invention relates to monochromatic organic light emitting devices. The organic light emitting device includes a substrate, an anode, a cathode and an organic electroluminescent medium disposed between the anode and the cathode, wherein the organic electroluminescent medium includes compound monochromatic luminescent layer; and the compound monochromatic luminescent layer includes host A doped with monochromatic dopant and host B doped with monochromatic dopant, wherein the host A is consisted of two kinds of materials with different transporting characteristics, one is hole-transporting material, and the other is electron-transporting material. In addition, the present invention further relates to white organic light emitting devices, wherein the organic electroluminescent medium is consisted of at least one compound monochromatic luminescent layer, which includes host A doped with monochromatic dopant and host B doped with monochromatic dopant. The present invention provides a design to improve the lifetime of the organic light emitting device markedly.

Claims

1. An organic light emitting device, including an anode, a cathode and an organic white-light-emitting electroluminescent medium disposed between the anode and the cathode, wherein the organic white-light-emitting electroluminescent medium comprises a compound monochromatic luminescent layer, which includes a first luminescent sublayer comprising host A doped with a monochromatic dopant and a second luminescent sublayer comprising host B doped with a monochromatic dopant, wherein the host A includes two kinds of materials with different transporting characteristics, one being a hole-transporting material, and the other being an electron-transporting material, and wherein the dopant of host A is the same as the dopant of host B.

2. The organic light emitting device of claim 1, wherein both of the first and second sublayers of the compound monochromatic luminescent layer are blue emitting layers, green emitting layers, red emitting layers, or yellow emitting layers.

3. The organic light emitting device of claim 1, wherein the hole-transporting material includes triarylamine, carbazole derivatives and pyrazolin derivatives.

4. The organic light emitting device of claim 1, wherein the electron-transporting material includes anthracene, oxadiazole derivative, metal chelates and conjugated polycyclic aromatic compounds.

5. The organic light emitting device of claim 1, wherein the host A consists of a single material with both the hole-transporting characteristic and the electron-transporting characteristic.

6. The organic light emitting device of claim 1, wherein the host B consists of a single material, and one of the two kinds of materials for host A is the same as the single material for host B.

7. The organic light emitting device of claim 1, wherein the hole-transporting material is represented by the following formula {circle around (1)}-{circle around (3)}: ##STR00011##

8. The organic light emitting device of claim 1, wherein one of the host A and the dopant thereof are the same as the host B and the dopant thereof.

9. The organic light emitting device of claim 1, wherein the organic electroluminescent medium includes a compound blue emitting layer, a green emitting layer and a red emitting layer.

10. The organic light emitting device of claim 1, wherein the organic electroluminescent medium includes a compound blue emitting layer and a yellow emitting layer.

11. The organic light emitting device of claim 1, wherein the electroluminescent medium includes compound green emitting layer, blue emitting layer and red emitting layer.

12. The organic light emitting device of claim 1, wherein the host A doped with monochromatic dopant further comprises an auxiliary material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows a cross-sectional representation of one embodiment of the structure of the blue organic light emitting device, comprising:

(2) 01 substrate, 02 anode, 03 cathode, 04 hole-injection layer, 05 hole-transporting layer, 06 blue emitting layer 1 (with host A), 07 blue emitting layer 2 (with host B), 08 electron-transporting layer, 09 luminescent layer

(3) FIG. 2 is a cross-sectional representation of one embodiment of the structure of the green organic light emitting device, comprising:

(4) 01 substrate, 02 anode, 03 cathode, 04 hole-injection layer, 05 hole-transporting layer, 06 green emitting layer 1 (with host A), 07 green emitting layer 2 (with host B), 08 electron-transporting layer, 09 luminescent layer

(5) FIG. 3 is a cross-sectional representation of one embodiment of the structure of the white organic light emitting device with two luminescent centers, comprising:

(6) 01 substrate, 02 anode, 03 cathode, 04 hole-injection layer, 05 hole-transporting layer, 12 yellow emitting layer, 06 blue emitting layer 1, 07 blue emitting layer 2, 08 electron-transporting layer, 09 luminescent layer

(7) FIG. 4 is a cross-sectional representation of one embodiment of the structure of the white organic light emitting device with three luminescent centers, comprising:

(8) 01 substrate, 02 anode, 03 cathode, 04 hole-injection layer, 05 hole-transporting layer, 11 green emitting layer, 06 blue emitting layer 1, 07 blue emitting layer 2, 13 red emitting layer, 08 electron-transporting layer, 09 luminescent layer

(9) FIG. 5 is a graph, showing the lifetime comparison of different devices of example 1

(10) FIG. 6 is a graph, showing the lifetime comparison of different devices of example 3

(11) FIG. 7 is a graph, showing the lifetime comparison of different devices of example 4

(12) FIG. 8 is a graph, showing the lifetime comparison of different devices of example 5

(13) FIG. 9 is a graph, showing the lifetime comparison of different devices of example 7

(14) FIG. 10 is a graph, showing the lifetime comparison of different devices of example 9

DESCRIPTION OF THE PREFERRED EMBODIMENTS

(15) The structure of the organic light emitting device in the present invention is shown in FIG. 1, wherein

(16) 01 is substrate which can be a glass substrate or a flexible substrate made of polyethylene terephthalate or polyimide material.

(17) 02 is anode which can be inorganic material or organic conducting polymer. The inorganic material is commonly made of metal oxide such as such as indium-tin oxide (ITO), zinc oxide and tin-zinc oxide or some metals with high work function such as aurum (Au), copper and argentums (Ag), and a preferable anode is ITO film. The preferable organic conducting polymer anode is polyethylene dioxythiophene (PEDOTPSS for short) or PANI films.

(18) 03 is cathode which can be a metal material with low work function selected from lithium (Li), magnesium (Mg), calcium (Ca), Strontium (Sr), aluminum (Al), indium (In) and their alloy with copper, aurum (Au) or argentums (Ag). The cathode can also be metal and metal fluoride alternately, and a preferable cathode layer is LiF and Al.

(19) 04 is hole-injection layer (unnecessary). The host material can be CuPc, and the inorganic material can be halide and oxide of bismuth.

(20) 05 is hole-transporting layer. The host material can be aromatic amine and graft polymer. A preferable material is NPB. The inorganic material can be halide or oxide of bismuth.

(21) 09 is the luminescent layer selected from low molecular weight compounds generally. The luminescent layer can be fluorescent materials such as Alq.sub.3, Gaq.sub.3, Al (Saph-q) or Ga (Saph-q), which is doped with either of fused-ring aromatic compounds (such as rubrene), coumarin (such as DMQA, C545T) or di-pyran (such as DCJTB, DCM), and the concentration is in the range of from 0.01 wt % to 20 wt %. In addition, the luminescent material can also be carbazole derivatives such as CBP, PVK, which is doped with phosphorescent material, such as Ir(ppy).sub.3, Ir(ppy).sub.2(acac) or PtOEP.

(22) 08 is electron-transporting layer, commonly selected from low molecular weight electron-transporting materials containing organic metal complex (such as Alq.sub.3, Gaq.sub.3, Al (Saph-q), BAlq or Ga (Saph-q)), fused-ring aromatic compounds (such as pentacene, perylene) or o-phenanthroline (such as Bphen, BCP).

(23) Next described are some examples and FIGS aimed to explain the technique scheme of the present invention, wherein the examples are only used to understand this invention well, but not limited to this invention.

EXAMPLE 1

(24) A blue light emitting device is reported in Example 1 and the device structure is shown in FIG. 1, wherein the luminescent layer 09 is compound blue emitting layer containing two layers 06 and 07. The blue emitting layer 1(06) contains host A doped with blue dopant where the host A is formed by two kinds of materials with different transporting characteristics, one of which is electron-transporting material represented by the following formula 4 (BH1 for short):

(25) ##STR00008##

(26) The other is hole-transporting material represented by the following formula {circle around (1)} (NPB for short):

(27) ##STR00009##

(28) The formula of the blue dopant is {circle around (8)} (BD1 for short):

(29) ##STR00010##

(30) The blue emitting layer 2(07) is formed by a host B and a blue dopant, where the host B is electron-transporting material and the blue dopant is BD1, and the device has the following device structure:
ITO/NPB/BH1:NPB:BD1/BH1:BD1/Alq.sub.3/LiF/Al(1)

(31) The device of device structure (1) is fabricated by the following procedures successively:

(32) 1) A transparent glass substrate is cleaned ultrasonically with boiling scour water and deionized (DI) water. Then the substrate is dried under infra-red lamp. An anode material is deposited on the cleaned glass as an anode layer and the thickness of it is 180 nm.

(33) 2) The cleaned anode film-coated glass substrate is put in the vacuum of about 110.sup.5 Pa, then a NPB film is vapor-deposited as a hole-transporting layer on the anode layer. The deposition rate is about 0.1 nm/s and the resulting NPB layer thickness is about 20 nm

(34) 3) The blue emitting layer 1 is vapor-deposited on the hole-transporting layer through the method of evaporating three materials at the same time. The weight ratio of NPB and BD1 to BH1 is respectively 20% and 3% and the thickness of this layer is 10 nm

(35) 4) The blue emitting layer 2 is subsequently vapor-deposited on the blue emitting layer 1 through the method of evaporating two materials at the same time. The deposition rate of BH1 is 0.2 nm/s and the weight ratio of BD1 to BH1 is 3%, and the thickness of this layer is 20 nm

(36) 5) An Alq.sub.3 film is subsequently vapor-deposited on the blue emitting layer 2 as electron-transporting layer. The deposition rate is 0.2 nm/s and the thickness of it is 50 nm.

(37) 6) Finally, a LiF layer and an Al layer, in sequence, are vapor-deposited as cathode on the above layers. The deposition rate of LiF is 0.010.02 nm/s, and the layer thickness is 0.7 nm The deposition rate of Al is 2.0 nm/s, and the thickness of it is 150 nm

COMPARATIVE EXAMPLE 1

(38) The device has the following device structure:
IOT/NPB/BH1:BD1/Alq.sub.3/LiF/Al(2)

(39) The device of device structure (2) is fabricated by the following procedures successively:

(40) The device of device structure (2) is fabricated with the same procedures as above described towards the device structure (1), except for cancelling the blue light emitting layer 1.

COMPARATIVE EXAMPLE 2

(41) The device has the following device structure:
ITO/NPB/BH1:NPB:BD1/Alq.sub.3/LiF/Al(3)

(42) The device of device structure (3) is fabricated by the following procedures successively:

(43) The device of device structure (3) is fabricated with the same procedures as above described towards the device structure (1), except for cancelling the blue light emitting layer 2.

(44) The following Table 1 exhibits the characteristics of these devices of Example 1 and Comparative example 1 and 2, and the corresponding graphs are shown in FIG. 5.

(45) TABLE-US-00001 TABLE 1 Lifetime at the same initial Device structure of luminance Efficiency Devices the luminescent layer (h) (cd/A) Example 1 BH1:20%NPB:5%BD1(10 nm)/ 428 5.9 BH1:5%BD1(15 nm) Comparative BH1:20%NPB:5%BD1(25 nm) 132 4.5 example 1 Comparative BH1:5%BD1(25 nm) 77 6.1 example 2

(46) It can be seen from Table 1 and FIG. 5 that the device lifetime of Example 1 is improved markedly compared to that of Comparative example 1 wherein the device has only blue luminescent layer 1 with host A, and Comparative example 2 wherein the device has only blue luminescent layer 2 with host B. Additionally, the efficiency of Example 1 is not decreased so much as higher than the devices with only blue luminescent layer 1 or 2.

EXAMPLE 2

(47) The device has the following device structure:
ITO/NPB/BH1:NPB(X %):BD1(Ynm)/BH1:BD1/Alq.sub.3/LiF/Al(4)

(48) The device of device structure (4) is fabricated by the following procedures successively:

(49) The device of device structure (4) is fabricated with the same procedures as above described towards the device structure (1), except for the weight ratio of NPB and BD1 to BH1 and the total thickness of the blue light emitting layer 1, wherein the weight ratio of NPB to BH1 is X % and the layer thickness is Ynm.

(50) The following Table 2 exhibits the characteristics of these devices with different weight ratio and thickness of Example 2.

(51) TABLE-US-00002 TABLE 2 Lifetime Efficiency Device structure of the luminescent layer Xwt % Y (nm) (h) (cd/A) BH1:NPB(20%):BD1(3%)(10 nm)/BH1:BD1 20 10 500 6 BH1:NPB(40%):BD1(3%)(10 nm)/BH1:BD1 40 10 200 5.6 BH1:NPB(60%):BD1(3%)(10 nm)/BH1:BD1 60 10 200 4 BH1:NPB(20%):BD1(3%)(20 nm)/BH1:BD1 20 20 250 5 BH1:NPB(40%):BD1(3%)(20 nm)/BH1:BD1 40 20 200 4.5 BH1:NPB(60%):BD1(3%)(20 nm)/BH1:BD1 60 20 150 3.5

(52) It can be seen from Table 2, the longest lifetime is obtained at the following condition: the weight ratio of NPB and BD1 to BH1 is 20% and 3% respectively, and the layer thickness of the blue light emitting layer 1 is 10 nm

(53) The marked lifetime improvement of the device having compound blue luminescent layer according to the above examples and comparative examples, may be attributed to the following reasons:

(54) The first, effectively widening the blue emission zone can frequently prolong the lifetime of devices. Commonly, there is energy barrier, carriers mainly accumulated at the interface of HTL/BH1:BD (hole-transporting layer represented by HTL, blue host represented by BH1, blue dopant represented by BD), and uncommonly, a compound blue luminescent layer is introduced in the present invention, wherein the blue luminescent layer 1 can transport holes and electrons to the interface of BH.sub.1:BH.sub.2:BD/BH.sub.1:BD, due to the host A of blue luminescent layer 1 containing not only hole-transporting material but also electron-transporting material (hole-transporting layer represented by HTL, blue host with electron-transporting characteristics represented by BH1, blue host with hole-transporting characteristics represented by BH2, and blue dopant represented by BD), so the recombination zone was extended to two interfaces of HTL/BH.sub.1:BH.sub.2:BD and BH.sub.1:BH.sub.2:BD/BH.sub.1:BD, and the broadening of the emission zone resulted in the device having the longest lifetime. Meanwhile, the concentration of the dopant of blue light emitting layer 1 is high enough for forming continuous energy level, which effectively increase the carriers transporting, and thus, improving the device lifetime and efficiency.

(55) Secondly, if the unrecombined holes enter the electron transporting layer Alq.sub.3, they will form the unstable Alq.sub.3 cationic species that will decrease the stability of the device. But in the present invention, the blue luminescent layer 2 is inserted between the Alq.sub.3 layer and the blue luminescent layer 1 and the holes could be blocked and consumed by recombination in the blue light emitting layer 2. There are fewer holes to inject into Alq.sub.3, which prevents the formation of Alq3.sup.+, so the stability and efficiency was enhanced.

(56) Thirdly, comparing to comparative example 1 or 2 only with either blue light emitting layer 1 or blue light emitting layer 2, the blue emission of the device of example 1 came from the compound blue emitting structure which consisted of the blue luminescent layer 1 and 2, thus both of that were complementary to each other during the course of device decay which prolonged the device lifetime.

(57) Finally, the introducing of the host A caused the enhancement of vitrification temperature. Such as NPB, its vitrification temperature is low generally, however, that was enhanced because of the doping with other materials in the blue luminescent layer 1, which improved the heat stability of the whole device.

EXAMPLE 3

(58) Another blue light emitting device using different blue material is reported in Example 3, and the device structure, same as Example 1, is showed in FIG. 1. The devices also employ compound luminescent layer, wherein the electron-transporting material of blue luminescent layer 1 makes use of BAlq, and the hole-transporting material makes use of NPB, while blue dopant is TBPe. The BAlq and TBPe are also used in blue luminescent layer 2 as host and dopant respectively. The device has the following device structure:
ITO/NPB/BAlq:NPB:TBPe/BAlq:TBPe/Alq.sub.3/LiF/Al(5)

(59) The device of device structure (5) is fabricated by the procedure similar to Example 1

COMPARATIVE EXAMPLE 3

(60) The device has the following device structure:
ITO/NPB/BAlq:TBPe/Alq.sub.3/LiF/Al(6)

(61) The device of device structure (6) is fabricated by the following procedures successively:

(62) The device of device structure (6) is fabricated with the same procedures as above described towards the device structure (5), except for cancelling the blue light emitting layer 1.

COMPARATIVE EXAMPLE 4

(63) The device has the following device structure:
ITO/NPB/BAlq:NPB:TBPe/Alq.sub.3/LiF/Al(7)

(64) The device of device structure (7) is fabricated by the following procedures successively:

(65) The device of device structure (7) is fabricated with the same procedures as above described towards the device structure (5), except for cancelling the blue light emitting layer 2.

(66) The following Table 3 exhibits the characteristics of these devices of Example 3 and Comparative example 3 and 4, and the corresponding graphs are shown in FIG. 6.

(67) TABLE-US-00003 TABLE 3 Lifetime at the same initial Device structure of luminance Efficiency Devices the luminescent layer (h) (cd/A) Example 3 BAlq:20%NPB:3%TBPe(10 nm)/ 125 4.3 BAlq:3%TBPe(15 nm) Comparative BAlq:3%TBPe(25 nm) 16.3 4.4 example 3 Comparative BAlq:20%NPB:3%TBPe(25 nm) 35 2.3 example 4

(68) It can be seen from Table 3 and FIG. 6 that the device lifetime of example 3 is improved markedly compared to that of Comparative example 3 and 4. Additionally, the efficiency of Example 3 is not decreased.

EXAMPLE 4

(69) A green light emitting device is reported in Example 4 and the device structure is shown in FIG. 2, wherein the luminescent layer 09 is compound green emitting layer containing two layers: layer 10 and layer 11. The green emitting layer 1(10) contains host A doped with green dopant where the host A is formed by two kinds of materials with different transporting characteristics, one of which is electron-transporting material BAlq, the other is hole-transporting material NPB, and the green dopant is C545T. The green emitting layer 2(11) is formed by a host B and a green dopant, where the host B is electron-transporting material BAlq and the green dopant is C545T, and the device has the following device structure:
ITO/NPB/BAlq:NPB:C545T/BAlq:C545T/Alq.sub.3/LiF/Al(8)

(70) The device of device structure (8) is fabricated by the procedure similar to Example 1.

COMPARATIVE EXAMPLE 5

(71) The device has the following device structure:
ITO/NPB/BAlq:C545T/Alq.sub.3/LiF/Al(9)

(72) The device of device structure (9) is fabricated by the following procedures successively:

(73) The device of device structure (9) is fabricated with the same procedures as above described towards the device structure (8), except for cancelling the green emitting layer 1.

COMPARATIVE EXAMPLE 6

(74) The device has the following device structure:
ITO/NPB/BAlq:NPB:C545T/Alq.sub.3/LiF/Al(10)

(75) The device of device structure (10) is fabricated by the following procedures successively:

(76) The device of device structure (10) is fabricated with the same procedures as above described towards the device structure (8), except for cancelling the green emitting layer 2.

(77) The following Table 4 exhibits the characteristics of these devices of Example 4 and Comparative example 5 and 6, and the corresponding graphs are shown in FIG. 7.

(78) TABLE-US-00004 TABLE 4 Lifetime at the same initial Device structure of luminance Efficiency Device the luminescent layer (h) (cd/A) Example 4 BAlq:20%NPB:2%C545T(10 nm)/ 895 10.1 BAlq:2%C545T(15 nm) Comparative BAlq:2%C545T(25 nm) 118 10.5 example 5 Comparative BAlq:20%NPB:2%C545T(25 nm) 252 8.1 example 6

(79) It can be seen from Table 4 and FIG. 7 that the device lifetime of Example 4 is improved markedly compared to that of Comparative example 5 and 6. Additionally, the efficiency of Example 4 is not decreased.

EXAMPLE 5

(80) A white organic light emitting device with two luminescent centers is reported in Example 5 and the device structure is shown in FIG. 3, wherein the luminescent layer 09 includes yellow emitting layer 12 and compound blue emitting layer containing two layers: blue emitting layer 1(06) and blue emitting layer 2(07). The yellow emitting layer 12 is formed by hole-transporting material NPB and yellow dopant (such as rubrene). The blue emitting layer 2(07) includes electron-transporting material BH1 and blue dopant BD1, and the blue emitting layer 1(06) includes host A doped with green dopant where the host A is formed by two kinds of materials with different transporting characteristics, one of which is electron-transporting material BH1, the other is hole-transporting material NPB. The preferable device has the following device structure:
ITO/NPB/NPB:rubrene/BH1:NPB:BD1/BH1:BD1/Alq.sub.3/LiF/Al(11)

(81) The white organic light emitting device of device structure (11) is fabricated by the following procedures successively:

(82) 1) A transparent glass substrate is cleaned ultrasonically with boiling scour water and deionized (DI) water. Then the substrate is dried under infra-red lamp. An anode material is deposited on the cleaned glass as an anode layer and the thickness of it is 180 nm.

(83) 2) The cleaned anode film-coated glass substrate is put in the vacuum of about 110.sup.5 Pa, then a NPB film is vapor-deposited as a hole-transporting layer on the anode layer. The deposition rate is about 0.1 nm/s and the resulting NPB layer thickness is about 20 nm And then a yellow emitting film is vapor-deposited on the hole-transporting layer through the method of evaporating two materials at the same time. The deposition rate of NPB is 0.2 nm/s and the weight ratio of rubrene to NPB is 2 wt %, and the thickness of this layer is 15 nm.

(84) 3) The blue emitting layer 1 is vapor-deposited on the yellow emitting layer through the method of evaporating three materials at the same time. The weight ratio of NPB and BD1 to BH1 is respectively 20% and 3% and the thickness of this layer is 10 nm.

(85) 4) The blue emitting layer 2 is subsequently vapor-deposited on the blue emitting layer 1 through the method of evaporating two materials at the same time. The deposition rate of BH1 is 0.2 nm/s and the weight ratio of BD1 to BH1 is 3%, and the thickness of this layer is 20 nm.

(86) 5) An Alq.sub.3 film is subsequently vapor-deposited on the second blue emitting layer as electron-transporting layer. The deposition rate is 0.2 nm/s and the thickness of it is 50 nm.

(87) 6) Finally, a LiF layer and an Al layer, in sequence, are vapor-deposited as cathode on the above layers. The deposition rate of LiF is 0.010.02 nm/s, and the layer thickness is 0.7 nm The deposition rate of Al is 2.0 nm/s, and the thickness of it is 150 nm.

COMPARATIVE EXAMPLE 7

(88) The device has the following device structure:
ITO/NPB/NPB:rubrene/BH1:BD1/Alq.sub.3/LiF/Al(12)

(89) The white organic light emitting device of device structure (12) is fabricated by the following procedures successively:

(90) The device of device structure (12) is fabricated with the same procedures as above described towards the device structure (11), except for cancelling the green emitting layer 1.

COMPARATIVE EXAMPLE 8

(91) The device has the following device structure:
ITO/NPB/NPB:rubrene/BH1:NPB:BD1/Alq.sub.3/LiF/Al(13)

(92) The white organic light emitting device of device structure (13) is fabricated by the following procedures successively:

(93) The device of device structure (13) is fabricated with the same procedures as above described towards the device structure (11), except for cancelling the green emitting layer 2.

(94) The following Table 5 exhibits the characteristics of these devices of Example 5 and Comparative example 7 and 8, and the corresponding graphs are shown in FIG. 8.

(95) TABLE-US-00005 TABLE 5 Lifetime Efficiency Device Device structure of the luminescent layer (h) (cd/A) Color Example 5 NPB:rubrene/BH1:20%NPB:3%BD1(10 nm)/ 312 10 White BH1:3%BD1(20 nm) Comparative NPB:rubrene/BH1:3%BD1(20 nm) 66 10.3 White example 7 on the yellow side Comparative NPB:rubrene/BH1:20%NPB:3%BD1(20 nm) 142 8.3 White example 8

EXAMPLE 6

(96) The device has the following device structure:
ITO/NPB/NPB:DCM/BAlq:NPB(X %):TBPe(Ynm)/BAlq:TBPe/Alq.sub.3/LiF/Al(14)

(97) The white organic light emitting device of device structure (14) is fabricated by the following procedures successively:

(98) The device of device structure (14) is fabricated with the same procedures as above described towards Example 5, except for different materials' weight ratio and total thickness, wherein the weight ratio of NPB and TBPe to BAlq is X % and 3% respectively, and the layer thickness is Ynm.

(99) The following Table 6 exhibits the characteristics of these devices with different weight ratio and thickness of Example 6.

(100) TABLE-US-00006 TABLE 6 Device structure of the compound blue Lifetime Efficiency emitting layer Xwt % Y (nm) (h) (cd/A) Color BAlq:NPB(20%):TBPe(3%)(10 nm)/BAlq:TBPe 20 10 803 8 White BAlq:NPB(40%):TBPe(3%)(10 nm)/BAlq:TBPe 40 10 507 7.5 White BAlq:NPB(60%):TBPe(3%)(10 nm)/BAlq:TBPe 60 10 411 6 White on the blue side BAlq:NPB(20%):TBPe(3%)(20 nm)/BAlq:TBPe 20 20 453 7 White BAlq:NPB(40%):TBPe(3%)(20 nm)/BAlq:TBPe 40 20 387 6.5 White BAlq:NPB(60%):TBPe(3%)(20 nm)/BAlq:TBPe 60 20 344 5.5 White on the blue side

(101) It can be seen from Table 6 that the longest lifetime is obtained at the following condition: the weight ratio of NPB and TPBe to BAlq is 20% and 3% respectively, and the layer thickness of the blue light emitting layer 1 is 10 nm

EXAMPLE 7

(102) Another white organic light emitting device with three luminescent centers is reported in Example 7 and the device structure is shown in FIG. 4, wherein the luminescent layer 09 includes green emitting layer 11, compound blue luminescent layer containing the blue emitting layer 1(06) and the blue emitting layer 2(07), and the red emitting layer 13. wherein the green emitting layer 11 includes NPB as host and Ir(ppy).sub.3 as green dopant; the blue emitting layer 2(07) includes electron-transporting material BAlq as host and TBPe as blue dopant; the emitting layer 1(06) includes host A doped with blue dopant and the host A is formed by two kinds of materials with different transporting characteristics; the red emitting layer includes Alq.sub.3 as host and DCJTB or Ir(piq).sub.2(acac) as red dopant. The preferable device has the following device structure:
ITO/NPB/NPB:C545T/BAlq:NPB:TBPe/BAlq:TBPe/Alq.sub.3:Ir(piq).sub.2(acac)/Alq.sub.3/LiF/Al(15)

(103) The white organic light emitting device of device structure (15) is fabricated by the following procedures successively:

(104) 1) A transparent glass substrate is cleaned ultrasonically with boiling scour water and deionized (DI) water. Then the substrate is dried under infra-red lamp. An anode material is deposited on the cleaned glass as an anode layer and the thickness of it is 180 nm.

(105) 2) The cleaned anode film-coated glass substrate is put in the vacuum of about 110.sup.5 Pa, then a NPB film is vapor-deposited as a hole-transporting layer on the anode layer. The deposition rate is about 0.1 nm/s and the resulting NPB layer thickness is about 20 nm And then a green emitting film is vapor-deposited on the hole-transporting layer through the method of evaporating two materials at the same time. The deposition rate of NPB is 0.2 nm/s and the weight ratio of C545T to NPB is 2 wt %, and the thickness of this layer is 15 nm.

(106) 3) The blue emitting layer 1 is vapor-deposited on the green emitting layer through the method of evaporating three materials at the same time. The weight ratio of NPB and TBPe to BAlq is respectively 20% and 3% and the thickness of this layer is 20 nm.

(107) 4) The blue emitting layer 2 is subsequently vapor-deposited on the blue emitting layer 2 through the method of evaporating two materials at the same time. The weight ratio of TBPe to BAlq is 3%, and the thickness of this layer is 20 nm.

(108) 5) A red emitting film is vapor-deposited on the blue emitting layer 2 through the method of evaporating two materials at the same time. The weight ratio of Ir(piq).sub.2(acac) to Alq.sub.3 is 5%, and the thickness of this layer is 10 nm.

(109) 6) An Alq.sub.3 film is subsequently vapor-deposited on the red emitting layer as electron-transporting layer. The deposition rate is 0.2 nm/s and the thickness of it is 50 nm.

(110) 7) Finally, a LiF layer and an Al layer, in sequence, are vapor-deposited as cathode on the above layers. The deposition rate of LiF is 0.010.02 nm/s, and the layer thickness is 0.7 nm. The deposition rate of Al is 2.0 nm/s, and the thickness of it is 150 nm.

COMPARATIVE EXAMPLE 9

(111) The device has the following device structure:
ITO/NPB/NPB:C545T/BAlq:TBPe/Alq.sub.3:Ir(piq).sub.2(acac)/Alq.sub.3/LiF/Al(16)

(112) The white organic light emitting device of device structure (16) is fabricated by the following procedures successively:

(113) The device of device structure (16) is fabricated with the same procedures as above described towards device (15), except for cancelling the blue emitting layer 1.

COMPARATIVE EXAMPLE 10

(114) The device has the following device structure:
ITO/NPB/NPB:C545T/BAlq:NPB:TBPe/Alq.sub.3:Ir(piq).sub.2(acac)/Alq.sub.3/LiF/Al(17)

(115) The device of device structure (17) is fabricated with the same procedures as above described towards device (15), except for cancelling the blue emitting layer 2.

(116) The following Table 7 exhibits the characteristics of these devices of Example 7 and Comparative example 9 and 10, and the corresponding graphs are shown in FIG. 9.

(117) TABLE-US-00007 TABLE 7 Lifetime Efficiency Device Device structure of the luminescent layer (h) (cd/A) Color Example 7 NPB:C545T/BAlq:20%NPB:3%TBPe(20 nm)/ 248 14.8 White BAlq:3%TBPe(20 nm)/Alq.sub.3:Ir(piq).sub.2(acac) Comparative NPB:C545T/BAlq:3%TBPe(20 nm)/ 72 15 White example 9 Alq.sub.3:Ir(piq).sub.2(acac) Comparative NPB:C545T/BAlq:20%NPB:3%TBPe(20 nm)/ 128 11 White example Alq.sub.3:Ir(piq).sub.2(acac) on the 10 red side

(118) It can be seen from Table 7 and FIG. 9 that the device lifetime of Example 7 is improved markedly compared to that of Comparative example 9 and 10. Additionally, the device efficiency of Example 7 is not decreased.

EXAMPLE 8

(119) A white organic light emitting device with two luminescent centers is reported in Example 8, wherein the luminescent layer includes yellow emitting layer, the blue emitting layer 1 and the blue emitting layer 2, wherein the blue emitting layer 1 contains a host B with both the hole-transporting characteristic and the electron-transporting characteristic.

(120) The preferable device has the following device structure:
ITO/NPB/NPB:rubrene/CBP:TBPe/BAlq:TBPe/Alq.sub.3/LiF/Al(18)

(121) The device of device structure (18) is fabricated with the same procedures as above described towards Example 5, except for changing the blue emitting layer 1 which contains a host B CBP. The deposition rate of CBP is 0.1 nm/s and the weight ratio of TBPe is 3%. The thickness of the blue emitting layer 1 and the blue emitting layer 2 is 10 nm and 20 nm respectively.

(122) Meanwhile, the following comparative devices are fabricated with the same procedures:
ITO/NPB/NPB:rubrene/BAlq:TBPe/Alq.sub.3/LiF/Al(19)
ITO/NPB/NPB:rubrene/CBP:TBPe/Alq.sub.3/LiF/Al(20)

(123) The following Table 8 exhibits the characteristics of these devices.

(124) TABLE-US-00008 TABLE 8 Device structure of Lifetime Efficiency the luminescent layer (h) (cd/A) color NPB:rubrene/CBP:3%TBPe(10 nm)/ 775 9 White BAlq:3%TBPe(20 nm) NPB:rubrene/CBP:3%TBPe(20 nm)/ 601 7.9 White BAlq:3%TBPe(20 nm) NPB:rubrene/BAlq:3%TBPe(20 nm) 497 9 White NPB:rubrene/CBP:3%TBPe(10 nm) 452 7.5 White on the yellow side

(125) It can be seen from Table 8 that the lifetime of the device using a host B with both the hole-transporting characteristic and the electron-transporting characteristic in the blue emitting layer 1 and blue emitting layer 2 is improved markedly compared to that of comparative devices, meanwhile, the device efficiency of Example 8 is not decreased. The longest lifetime is obtained at the following condition: the weight ratio of TBPe is 3%, and the layer thickness of the blue light emitting layer 1 is 10 nm.

(126) Additionally, the dopant of the blue emitting layer can also be either BCzVBi, BCzVB, DPAVBi, DPAVB, BDAVBi or N-BDAVBi.

EXAMPLE 9

(127) A white organic light emitting device including a compound blue emitting layer is reported in Example 9, wherein the blue emitting layer 1 and blue emitting layer 2 both contain a yellow dye. The blue emitting layer 1 contains host A and a blue dopant, and the host A includes an electron-transporting material and a hole-transporting material. The blue emitting layer 2 contains an electron-transporting material and a blue dopant.

(128) The preferable device has the following device structure:
ITO/NPB/BH1:NPB:BD1:rubrene/BH1:BD1:rubrene/Alq.sub.3/LiF/Al(21)

(129) The white organic light emitting device of device structure (21) is fabricated by the following procedures successively:

(130) The device above is fabricated with the same procedures as above described towards Examples, and the differences are the blue emitting layer 1 through the method of evaporating four materials at the same time and the thickness of it is 10 nm. The blue emitting layer 2 through the method of evaporating three materials at the same time and the thickness of it is 15 nm.

(131) Meanwhile, the following comparative devices are fabricated with the same procedures:
ITO/NPB/BH1:BD1:rubrene/Alq.sub.3/LiF/Al(22)
ITO/NPB/BH1:NPB:BD1:rubrene/Alq.sub.3/LiF/Al(23)

(132) The following Table 9 exhibits the characteristics of these devices of Example 9 and Comparative examples, and the corresponding graphs are shown in FIG. 10.

(133) TABLE-US-00009 TABLE 9 Lifetime at the same initial luminance Efficiency Device Device structure of the luminescent layer (h) (cd/A) Color Example 9 BH1:20%NPB:5%BD1:0.5%rubrene(10 nm)/ 1400 11.3 White BH1:5%BD1:0.5%rubrene(15 nm) Comparative BH1:5%BD1:1%rubrene(25 nm) 663 11.8 White example 11 Comparative BH1:20%NPB:5%BD1:1%rubrene(25 nm) 834 9.6 White example 12