Measurement object, method for the production thereof and device for the thermal treatment of substrates

Abstract

A measuring object for use in a heating apparatus for the thermal treatment of substrates is described, wherein the measuring object is the substrate to be treated or an object which in use has a substantially known temperature relation to the substrate to be treated, wherein the measuring object comprises a surface having at least one surface area, which acts as a measuring surface for an optical temperature measurement. A predetermined structure in the form of a plurality of recessions is formed in the surface area, in order to influence the emissivity of the surface area.

Claims

1. A substrate carrier for the use in an apparatus for the thermal treatment of substrates, wherein in use the substrate carrier comprises: a substantially known temperature relation to the substrate to be treated, wherein a measuring object comprises a surface having at least one surface area, which acts as a measuring surface for an optical temperature measurement, and wherein at least one predetermined structure having a plurality of recessions is formed in the at least one surface area, in order to increase the emissivity of the substrate carrier at this surface area compared to the surrounding surface area.

2. The substrate carrier according to claim 1, wherein the substrate carrier is a susceptor for use in a rapid heating apparatus.

3. The substrate carrier according to claim 1, wherein the recessions are arranged such that they form a plurality of pyramids.

4. The substrate carrier according to claim 3, wherein the recessions in cross section comprise inclined surfaces, which are arranged with respect to each other such that they form an opening angle of 60.

5. The substrate carrier according to claim 1, wherein the recessions are arranged such that they form a saw-tooth structure.

6. The substrate carrier according to claim 5, wherein the recessions in cross section comprise inclined surfaces, which are arranged with respect to each other such that they form an opening angle of 60.

7. An apparatus for the thermal treatment of substrates, comprising: a process chamber for receiving at least one substrate; a substrate carrier according to claim 1 in the process chamber; at least one heating device, which is directed onto at least one of the structure of the substrate carrier and the at least one substrate; and an optical temperature measurement unit, which is directed onto the structure of the substrate carrier, for capturing the optical temperature measurement.

8. The apparatus according to claim 7, wherein the apparatus is a cold wall reactor having a plurality of heating lamps, and wherein the substrate carrier is a susceptor, which supports the at least one substrate.

9. The apparatus according to claim 7, wherein the apparatus is a hot wall reactor.

10. A method for manufacturing a substrate carrier according to claim 1, wherein a predetermined structure in the form of a plurality of recessions is formed in a planar surface of the substrate carrier.

Description

BRIEF DESCRIPTIONS OF THE DRAWINGS

(1) FIG. 1 is a schematic side sectional view through an apparatus for the thermal treatment of semiconductor wafers;

(2) FIG. 2 is a schematic top view onto a susceptor;

(3) FIGS. 3 (a) to (c) are schematic sectional views through a partial area of different embodiments of the susceptor according to FIG. 2.

(4) FIGS. 4(a) to 4(c) are top views onto the respective partial areas of FIGS. 3(a) to 3(c).

DESCRIPTION

(5) In the following description, terms such as above, below, left and right and similar terms relate to the figures and should not be seen in a limiting matter, even though they may refer to a preferred embodiment. The term substantially with respect to angles and arrangements should encompass deviations of at most 10, preferably at most 5, unless other specifications are made. The term substance with respect to other information should encompass deviations of at most 10%, preferably at most 5%, unless other specifications are made.

(6) FIG. 1 shows a schematic side sectional view of an apparatus 1 for the thermal treatments of semiconductor wafers W. The apparatus 1 has a housing 2 having an inner chamber, which inter alia forms a process chamber 3. The process chamber 3 is bounded at its upper and lower sides by wall elements 5 and 6, respectively and at its sides by the housing 2. Above the wall element 5, a lamp chamber 7 is provided within the housing 2, which may be mirrored and in which heating source in the form of a plurality of lamps 8 is provided. Below the wall element 6 also a lamp chamber 9, similar to lamp chamber 7, is provided, in which a heating source in the form of a plurality of lamps 10 is provided.

(7) The side walls of the process chamber 3 may also have a certain mirror effect for at least a portion of the electromagnetic radiation present within the process chamber 3. Furthermore, at least one of the side walls of the process chamber 3 has a not shown process chamber door, in order to enable insertion and removal of the semiconductor wafer W. Furthermore, gas inlets and gas outlets (not shown) may be provided for the process chamber 3.

(8) Within the process chamber 3 a substrate receptacle in the form a susceptor 12 having supports 13 is provided, on which the semiconductor wafer W may be placed. The semiconductor wafer W is positioned with respect to the susceptor 12 such that they have the same temperature or at least have a substantially known temperature relation to each other. Above the semiconductor wafer W an optional further susceptor 15 may be provided, such that the semiconductor wafer W is, as shown, received between two susceptors 12, 15. The susceptor 15 may be fixedly provided within the process chamber or it may also be supported via supports 16 on the susceptor 12. Alternatively it is also possible to only provide a susceptor 15 above the semiconductor wafer W and to for example receive the semiconductor W on a holder which is in substance transparent to the lamp radiation. The susceptor 15 may also be a substantially closed box, in which the semiconductor to be treated is received.

(9) The susceptors 12, 15 each have a disk shaped configuration and they may have a circumferential shape corresponding to the circumferential shape of the semiconductor wafer W. On its bottom face the susceptor 12 has a predetermined structure 30, which is formed in the surface thereof. The structure may extend over the complete bottom face or may be formed only in a limited surface area thereof.

(10) The FIGS. 3(a) to 3(c) each show respective sectional views of different susceptors 12 at the structure 30, while FIGS. 4(a) to 4(c) show respective top views onto the respective different structures 30.

(11) The structure 30 according to FIGS. 3(a) and 4(a) is formed by a plurality of parallel extending first V-shaped channels 35 and a plurality of parallel extending second V-shaped channels 35, wherein the second V-shaped channels extend perpendicular to the first V-shaped channels 35. The first and second V-shaped channels are formed and spaced uniformly, such that a plurality of pyramid shaped protrusions (extending from the bottom of the respective channels) is formed. The V-shaped channels each comprise an opening angle , wherein 60, preferably, 40.

(12) The structure 30 according to FIGS. 3(b) and 4(b) is formed by a plurality of circular channels 45, which are arranged concentrically with respect to each other. The channels 45 in cross section form a saw-tooth configuration. In particular, the channels 45 each have a first side wall 47, which extends in substance perpendicular to the surface of the susceptor 12, as well as a second side wall 48, which extends with respect to the first side wall 47 under an angle , wherein 40, preferably, 20. The channels 45 are formed and spaced uniformly such that a uniform saw-tooth configuration is formed.

(13) The structure 30 according to FIGS. 3(c) and 4(c) is formed by a plurality of parallel channels 55. The channels 55 in cross section form a saw-tooth configuration. In particular, the channels 55 each comprise a first side wall 57, which extends in substance perpendicular to the surface of the susceptor 12, as well as a second side wall 58, which extends with respect for the first side wall 57 under an angle , wherein 40, preferably 23 20.

(14) The channels 45 are formed and spaced uniformly, such that a uniform saw-tooth configuration is formed.

(15) The susceptor 12 may optionally be connected to a rotation mechanism (not shown) in order to rotate a semiconductor wafer W received thereon, around an axis, which extends in substance perpendicular to the surface of the semiconductor wafer W. In this case, the structure 30 in the susceptor 12 should be provided over the whole bottom surface or in a ring shaped or annular surface area thereof, as indicated in FIG. 2. The rotation may enable homogenizing the temperature of the susceptor 12 and thus the semiconductor wafer W, as is known in the art, in the process chamber 3 a compensation ring may be provided which radially surrounds the semiconductor wafer in its plane, as is known in the art of RTP devices.

(16) The wall elements 5 and 6, which bound the process chamber above and below are each made of quartz and are in substance transparent to the radiation of the lamps 8 and 10, respectively.

(17) The lamps 8 and 10 may be so called flash lamps, which are typically operated in a flash mode, or may be tungsten-halogen lamps, which are typically operated continuously. The lamps may obviously also be arranged in a different manner and it is also possible to combine the lamp types with each other or to also use different lamp types either alone or in combination. In particular, it is also possible, to dispense with the lower lamp chamber 9 and lamps 10 and to provide only the upper lamp chamber 7 with lamps 8 or to dispense with the upper lamp chamber 7 and lamps 8 and to provide only the lower lamp chamber 9 with lamps 10.

(18) The apparatus 1 further comprises a first pyrometer 20, which is directed onto the bottom face of the susceptor 12. Optionally, also a second pyrometer may be provided which may be directed onto at least one of the lamps 10, which may herein below be called lamp pyrometer 25. If an upper susceptor 15 is provided, the first pyrometer 20 could also be directed onto the upper face of the susceptor 15 and the lamp pyrometer 25 could be directed onto one of the lamps 8.

(19) The first pyrometer 20 has a field of view 20a (see FIG. 2), which is directed onto the surface area of the susceptor 12, in which the structure 30 is formed. In the presentation in FIG. 2, the surface area is formed in the shape of a ring or annulus, since it is assumed that the susceptor 12 is supported in a rotatable manner. With a stationary susceptor, the surface area may also have a shape corresponding to the field of view 20a. By using a corresponding predetermined structuring of the surface area, the emissivity of the thus structured surface area may be influenced in a predetermined manner and may particularly be increased. The emissivity of the surface area having the structure 30 may be determined and is substantially more robust with respect to temperature changes of the susceptor and process reactions at the surface thereof.

(20) In particular, the emissivity at the area of the structure may approach an emissivity of 1. Tests with a measuring object made of graphite showed for example a significant increase in the emissivity by forming a pyramid structure in comparison to the emissivity of a corresponding measuring object having an unstructured surface. Thus, the predetermined structuring of the surface area of the measuring object may in particular influence the reflectivity of the surface area of the measuring object.

(21) In the representation of FIG. 1, the first substrate pyrometer 20 is shown such that it extends into the lower lamp chamber 9 and is directed in a perpendicular manner from below onto the susceptor 12. It would also be possible, to attach the first substrate pyrometer at a side of the housing 2 and to direct the same from the side onto a surface area of the susceptor 12 (or 15), which comprises a respective structure 30. The structure 30 could also be formed on a side of the susceptor 12 (or 15) facing the semiconductor wafer W.

(22) The first substrate pyrometer 20 is thus capable of detecting radiation coming from the susceptor (at an in substance known, high emissivity) to detect the temperature of the susceptor and thus indirectly of the semiconductor wafer W. Components of lamp radiation which may directly or indirectly (via reflection) have fallen onto the pyrometer may if needed be compensated for using the Ripple-Technique or variations thereof.

(23) The structure 30 may be formed in any manner in the susceptor 12 (or 15) or any other measuring object, which manner is suitable for obtaining a corresponding predetermined structure.

(24) The invention was previously described with respect to a specific example of a susceptor as a measuring object in a rapid heating device, in which the substrate is directly or indirectly (via the susceptor) heated by lamp radiation. Such devices are also often called cold wall reactors, as they operate without a substantial heating of the chamber walls. The concept of providing a predetermined structure in a measuring object, in order to influence the emissivity of the measuring object in the area of the structure and to thus enable and simplify, respectively, an optical temperature measurement, may also be used in other thermal treatment devices, in particular in so called hot wall reactors. It is for example possible to provide a respective structure in a surface area of any element in a hot wall reactor. In particular, such a respective structure could for example be provided in a substrate carrier for supporting at least one substrate, in particular the structure may be provided in a wafer boat, which supports a plurality of substrates. A respective structure could also be formed in a wall element of a hot wall reactor, in order to for example enable a reliable optical (contactless) temperature measurement of an inner wall of the same. Even thought the measuring object having the predetermined structure is described in the above embodiment as an object which is separate from the substrate to be treated, such a respective structuring could possibly also be formed directly in the substrate to be treated. In so doing, the structure should preferably be formed such that it does not negatively influence the operational characteristics of the substrate later. In the case of a semiconductor wafer, for example formation of a corresponding structure as a micro- or nano-structure by means of a laser on a backside thereof may be feasible. Rather than forming a structure into the measuring object it is also possible to form a respective structure on the surface of the measuring object, for example by means of growing a respective layer or by deposition.

(25) The features of individual embodiments may freely be combined with features of other embodiments, or such features may replace each other, as long as a respective compatibility is given. Instead of upper and lower lamp arrangements, as shown in FIG. 1, a configuration may be provided, wherein one or both of the lamp arrangements are replaced by a microwave plasma arrangement, wherein in such a case typically the upper and lower wall elements made of quartz would be dispensed with.