MULTIPHOTON ABSORPTION LITHOGRAPHY PROCESSING SYSTEM
20180196353 ยท 2018-07-12
Assignee
Inventors
Cpc classification
G02B3/0056
PHYSICS
G03F7/70291
PHYSICS
G02B3/0043
PHYSICS
G02B21/0016
PHYSICS
G03F7/70375
PHYSICS
G03F7/70275
PHYSICS
International classification
Abstract
A multiphoton absorption lithography processing system configured to process a to-be-processed object is provided. The multiphoton absorption lithography processing system includes a femtosecond laser source, a spatial light modulator, a lens array, and a stage. The femtosecond laser source is configured to emit a femtosecond laser beam. The spatial light modulator is configured to modulate the femtosecond laser beam into a modulated beam. The lens array is disposed on a path of the modulated beam and configured to divide the modulated beam into a plurality of sub-beams and make the sub-beams be focused on a plurality of position points at the to-be-processed object, so as to form multiphoton absorption reaction at the position points. The stage is configured to carry the to-be-processed object. The stage and the lens array are adapted to move with respect to each other in three dimensions.
Claims
1. A multiphoton absorption lithography processing system, configured to process a to-be-processed object, comprising: a femtosecond laser source, configured to emit a femtosecond laser beam; a spatial light modulator, disposed on a path of the femtosecond laser beam and configured to modulate the femtosecond laser beam to a modulated beam; a lens array, disposed on a path of the modulated beam and configured to divide the modulated beam into a plurality of sub-beams and respectively focus the sub-beams on a plurality of position points of the to-be-processed object, so as to generate a multiphoton absorption reaction on the position points; and a stage, configured to carry the to-be-processed object, wherein the stage and the lens array are adapted to move with respect to each other in three dimensions to move the position points, on which the sub-beams are focused, with respect to the to-be-processed object in three dimensions in the to-be-processed object, so as to three-dimensionally process the to-be-processed object.
2. The multiphoton absorption lithography processing system according to claim 1, wherein the lens array comprises a plurality of lenses arranged in an array, and focal lengths of the lenses are greater than a wavelength of the femtosecond laser beam and are less than or equal to 20 mm.
3. The multiphoton absorption lithography processing system according to claim 1, further comprising an imaging device, disposed on the path of the modulated beam, located between the spatial light modulator and the lens array, and configured to form an image of the spatial light modulator on the lens array.
4. The multiphoton absorption lithography processing system according to claim 3, wherein the imaging device comprises: a microscope, disposed on the path of the modulated beam and located between the spatial light modulator and the lens array; and at least one lens, disposed on the path of the modulated beam and located between the spatial light modulator and the microscope.
5. The multiphoton absorption lithography processing system according to claim 4, wherein the at least one lens comprises two lenses, and the imaging device further comprises an aperture stop, disposed between the two lenses.
6. The multiphoton absorption lithography processing system according to claim 1, wherein the lens array comprises a plurality of lenses arranged in an array, and areas of the lenses present an increasing tendency from a center of the lens array to an edge of the lens array, so as to equalize light energy on the position points.
7. The multiphoton absorption lithography processing system according to claim 1, further comprising a controller, electrically connected to the spatial light modulator, wherein the lens array comprises a plurality of lenses arranged in an array, areas of the lens are substantially the same as each other, the controller controls the spatial light modulator to make an effective light sending ratio provided by a bright pixel of the spatial light modulator present an increasing tendency from a center of the spatial light modulator to an edge thereof, so as to equalize light energy on the position points.
8. The multiphoton absorption lithography processing system according to claim 1, further comprising: a controller, electrically connected to the spatial light modulator; and an actuator, configured to enable the stage and the lens array to move with respect to each other in the three dimensions, wherein the controller is also electrically connected to the actuator and enables an action of the spatial light modulator to cooperate with an action of the actuator.
9. The multiphoton absorption lithography processing system according to claim 8, wherein the spatial light modulator comprises a plurality of regions, the lens array comprises a plurality of lenses arranged in an array, lights from the regions are projected to the lenses respectively, and when the controller controls the actuator to enable the stage to move along a path, the controller enables actions of the regions for presenting a bright state or a dark state to be the same, so as to process the to-be-processed object into a plurality of repeated three-dimensional structures.
10. The multiphoton absorption lithography processing system according to claim 8, wherein the spatial light modulator comprises a plurality of regions, the lens array comprises a plurality of lenses arranged in an array, lights from the regions are projected to the lenses respectively, and when the controller controls the actuator to enable the stage to move along a path, the controller enables actions of the regions for presenting a bright state or a dark state to be not completely the same, so as to enable a plurality of three-dimensional structures respectively processed by the sub-beams are spliced into a complete three-dimensional structure, and the three-dimensional structures respectively processed by the sub-beams are not completely the same.
11. The multiphoton absorption lithography processing system according to claim 1, wherein a material of the to-be-processed object is a light sensitive material, the multiphoton absorption reaction is a two-photon absorption reaction, and one half of the wavelength of the femtosecond laser beam falls within a light sensitive wavelength band of the light sensitive material.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DESCRIPTION OF THE EMBODIMENTS
[0017]
[0018] The spatial light modulator 200 is disposed on a path of the femtosecond laser beam 112 and configured to modulate the femtosecond laser beam 112 to a modulated beam 210. In this embodiment, the spatial light modulator 200, for example, is a digital micro-mirror device (DMD). However, in other embodiments, the spatial light modulator 200 may also be a liquid crystal spatial light modulator (LC-SLM), a liquid-crystal-on-silicon panel (LCOS), a micro-electromechanical-system lens array, or another suitable spatial light modulator.
[0019] The lens array 300 is disposed on a path of the modulated beam 210 and configured to divide the modulated beam 210 into a plurality of sub-beams 212 and respectively focus the sub-beams 212 on a plurality of position points P of the to-be-processed object 50, so as to generate a multiphoton absorption reaction on the position points P. The multiphoton absorption reaction in the invention includes: a two-photon absorption reaction, a three-photon absorption reaction, a four-photon absorption reaction, or the like, that is, the multiphoton absorption reaction means an N-photon absorption reaction, where N is an integer greater than or equal to 2. In this embodiment, the sub-beams 212 generate a two-photon absorption reaction on the position points P, that is, one half of the wavelength of the femtosecond laser beam 112 falls within a light sensitive wavelength band of the light sensitive material of the to-be-processed object 50. If a three-photon absorption reaction is generated on the position points P, one third of the wavelength of the femtosecond laser beam 112 falls within the light sensitive wavelength band of the light sensitive material. Similarly, if an N-photon absorption reaction is generated on the position points P, one Nth of the wavelength of the femtosecond laser beam 112 falls within the light sensitive wavelength band of the light sensitive material.
[0020] The stage 120 is configured to carry the to-be-processed object 50. The stage 120 and the lens array 300 are adapted to move with respect to each other in three dimensions to move the position points P, on which the sub-beams 212 are focused, with respect to the to-be-processed object 50 in three dimensions in the to-be-processed object 50, so as to three-dimensionally process the to-be-processed object 50.
[0021] In the multiphoton absorption lithography processing system 100 of this embodiment, a lens array 300 is used to divide a modulated beam 210 into a plurality of sub-beams 212, and the sub-beams 212 are respectively focused onto a plurality of position points P of a to-be-processed object 50, so as to generate a multiphoton absorption reaction on the position points P. In this way, a speed of lithography processing can be effectively redoubled, a processing time can also be effectively shortened, and meanwhile, processing with high precision can be maintained. After the to-be-processed object 50 generates a multiphoton absorption reaction on the position points P, a multiphoton polymerization reaction is generated, and further, after the position points P move, with respect to the to-be-processed object 50, in the three dimensions in the to-be-processed object 50, the to-be-processed object 50 is thus three-dimensionally processed. The part, which does not generate a multiphoton polymerization reaction, in the to-be-processed object 50 may be removed by using a developer, so as to further enable the to-be-processed object 50 to be processed into an object with a three-dimensional structure.
[0022] In this embodiment, distances from the lens array 300 to the position points P may be far-field optics distances instead of near-field optics distances. For example, the lens array 300 includes a plurality of lenses 310 arranged in an array, and focal lengths of the lenses 310 are greater than a wavelength of the femtosecond laser beam 112 and are less than or equal to 20 millimeter (mm). A lower limit of the focal lengths of the lenses 310 has different values according to the system. For example, when the light sensitive wavelength band of the photoresist of the to-be-processed object 50 is about 400 nanometer (nm), a femtosecond laser beam 112 with a wavelength of 800 nm may be used to perform exposure. Moreover, the definition of the near-field optics is that the focal lengths of the lenses 310 are less than a use wavelength (that is, the indicated 800 nm in this embodiment). However, the focal lengths of the lenses 310 in this embodiment are greater than the use wavelength. Therefore, the optical system performs processing under the far-field optics. In this way, the position points P may move drastically, with respect to the to-be-processed object 50, in a depth direction (that is, being parallel to a direction of an optical axis of the lens 310, i.e. the z-direction in
[0023] In this embodiment, the multiphoton absorption lithography processing system 100 further includes an imaging device 400, disposed on a path of the modulated beam 210 and located between the spatial light modulator 200 and the lens array 300, so as to form an image of the spatial light modulator 200 on the lens array 300. The imaging device 400 may include a microscope 410 and at least one lens 420 (in
[0024] In addition, in this embodiment, the multiphoton absorption lithography processing system 100 further includes a reflecting mirror 150, disposed on a path of the femtosecond laser beam 112 and located between the femtosecond laser source 110 and the spatial light modulator 200, so as to reflect the femtosecond laser beam 112 from the femtosecond laser source 110 to the spatial light modulator 200. The reflecting mirror 150 may be configured to reduce the volume of the multiphoton absorption lithography processing system 100. However, in other embodiments, the multiphoton absorption lithography processing system 100 may not include a reflecting mirror 150, and the femtosecond laser source 110 emits a femtosecond laser beam 112 toward the spatial light modulator 200 and transmits the femtosecond laser beam 112 to the spatial light modulator 200.
[0025] In this embodiment, the multiphoton absorption lithography processing system 100 further includes a controller 130 and an actuator 140. The controller 130 is electrically connected to the spatial light modulator 200, and the actuator 140 is configured to enable the stage 120 and the lens array 300 to move, with respect to each other, in the three dimensions. In this embodiment, the actuator 140, for example, is a motor, which is connected to the stage 120, so as to enable the stage 120 to move in the three dimensions, and in this embodiment, the stage 120 is only connected to the to-be-processed object 50 and does not move the lens array 300, and the lens array 300 is fixed onto a platform of the microscope 410. However, in other embodiments, the actuator 140 may be connected to a whole optical system before the lens array 300 (for example, a whole optical system including the lens array 300, the imaging device 400, the spatial light modulator 200, the reflecting mirror 150, the femtosecond laser source 110), so as to enable the whole optical system before the lens array 300 to move in the three dimensions and the stage 120 to keep still. The foregoing three dimensions, for example, are three dimensions including an x-direction, a y-direction, a z-direction in
[0026] The controller 130 is also electrically connected to the actuator 140 and enables an action of the spatial light modulator 20 to cooperate with an action of the actuator 140. Specifically, in this embodiment, a digital micro-mirror device (DMD) is used as an example of the spatial light modulator 200 and includes a plurality of micro-mirrors 220, the micro-mirror 220 may be turned over to an angle as an on-state of the micro-mirror 220 on the left of
[0027] In an embodiment, the controller 130 is, for example, a central processing unit (CPU), a microprocessor, a digital signal processor (DSP), a programmable controller, a programmable logic device (PLD), or other similar devices, or a combination of the said devices, which are not particularly limited by the invention. Further, in an embodiment, each of the functions of the controller 130 may be implemented as a plurality of program codes. These program codes will be stored in a memory, so that these program codes may be executed by the controller 130. Alternatively, in an embodiment, each of the functions of the controller 130 may be implemented as one or more circuits. The invention is not intended to limit whether each of the functions of the controller 130 is implemented by ways of software or hardware.
[0028] In this embodiment, as shown in
[0029] In another embodiment, as shown in
[0030] In this embodiment, the spatial light modulator 200 has a plurality of regions 230, and each region 230 may include one or more micro-mirrors 220. Lights from the regions 230 are respectively projected to the lenses 310 of the lens array 300. When the controller 130 controls the actuator 140 to make the stage 120 move along a path (which, for example, is an indirect path to arrive at a plurality of positions in a specific three-dimensional space), the controller 130 enables actions of the regions 230 for presenting a bright state or a dark state to be the same (the bright state may be contributed by the micro-mirror 220 located on the on-state, and the dark state may be formed by the micro-mirror 220 located on the off-state), so as to process the to-be-processed object into a plurality of repeated three-dimensional structures, for example, a plurality of repeated needle-shaped structures 60 in
[0031] However, in another embodiment, as shown in
[0032] Further referring to
[0033] In conclusion, in the multiphoton absorption lithography processing system of the embodiments of the invention, a lens array is used to divide a modulated beam into a plurality of sub-beams, and the sub-beams are respectively focused onto a plurality of position points of a to-be-processed object, so as to generate a multiphoton absorption reaction on the position points. In this way, a speed of lithography processing can be effectively redoubled, a processing time can also be effectively shortened, and meanwhile, processing with high precision can be maintained.
[0034] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the invention covers modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.