Mounting method for an integrated semiconductor wafer device, and mounting device able to be used therefor

Abstract

A mounting method for an integrated semiconductor wafer device including a glass substrate a recess, at least one semiconductor wafer that is arranged in the recess, and at least one spring element engaging in the recess for maintaining the position or orienting the semiconductor wafer, wherein the method includes providing the glass substrate with a relaxed spring element engaging in the contour space of the semiconductor wafer, providing a spring manipulator substrate with a manipulation element adapted to the contour space and/or the at least one spring element, displacing the glass substrate in relation to the spring manipulator substrate such that its manipulation element runs into the recess, placing the semiconductor wafer into the recess, and displacing the glass substrate back in relation to the spring manipulator substrate such that its manipulation element moves out of the contour space of the semiconductor wafer, releasing the spring element.

Claims

1-11. (canceled)

12. A mounting method for an integrated semiconductor wafer device as manufacturing intermediate product, which comprises a glass substrate having at least one recess formed by walls, at least one semiconductor wafer that is to be arranged in the recess, and at least one spring element engaging in the recess and formed on the glass substrate for maintaining at least one of the group comprising the position and orienting of the at least one semiconductor wafer in the recess, the method comprising: providing the glass substrate with a relaxed spring element engaging in the contour space of the semiconductor wafer to be positioned, providing a spring manipulator substrate with a manipulation element adapted to at least one of the group comprising the contour space of the semiconductor wafer to be positioned and the at least one spring element, displacing the glass substrate in relation to the spring manipulator substrate such that its manipulation element runs into the recess, pre-tensioning and deflecting the spring element out of the contour space of the semiconductor wafer, placing the semiconductor wafer into the recess, and displacing the glass substrate back in relation to the spring manipulator substrate such that its manipulation element moves out of the contour space of the semiconductor wafer, releasing the spring element, as a result of which the at least one spring element acts on the semiconductor wafer to at least one of maintain its position and orient it in the recess.

13. The mounting method according to claim 12, for an integrated semiconductor component arrangement as manufacturing intermediate product.

14. The mounting method according to claim 12, which comprises semiconductor components that are to be arranged in the recess.

15. The mounting method according to claim 12, wherein the manipulation element runs into the recess to a maximum penetration depth of less than half the thickness of the glass substrate.

16. The mounting method according to claim 12, wherein the manipulation element runs into the recess of the glass substrate from below.

17. The mounting method according to claim 12, wherein a projection having a trapezoidal cross section and having a lateral manipulation edge for the spring element is used as manipulation element.

18. The mounting method according to claim 12, wherein the semiconductor wafer in the recess is placed on the manipulation element in a raised intermediate position and lowered into its final position in the recess when the manipulation element is moved out from the recess.

19. The mounting method according to claim 16, wherein the semiconductor wafer placed on the manipulation element is fastened on the manipulation element in the intermediate position through the application of negative pressure.

20. The mounting method according to claim 12, wherein the relative displacement between glass substrate and spring manipulator substrate is achieved through the application of negative pressure between these two components.

21. A mounting device for performing the mounting method, comprising a spring manipulator substrate able to be displaced in relation to the glass substrate in the thickness direction thereof, which spring manipulator substrate is provided with at least one manipulation element adapted to at least one of the group comprising the contour space of the semiconductor wafer to be positioned and the at least one spring element.

22. The mounting device according to claim 21, wherein the spring manipulator substrate is formed from a plate-shaped base body having the at least one manipulation element arranged thereon.

23. The mounting device according to claim 21, wherein the manipulation element is designed as a projection having a trapezoidal cross section and having a lateral manipulation edge for the spring element.

24. The mounting device according to claim 21, wherein suction channels that are continuous in the thickness direction are formed in the spring manipulator substrate.

25. The mounting device according to claim 21, wherein suction channels that are continuous in the thickness direction are formed in at least one of the base body and the manipulation element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG. 1 shows a vertical sectional illustration of a glass substrate having recesses and through glass vias (TGV) in an embodiment not according to the invention,

[0041] FIG. 2 shows a horizontal sectional illustration of a glass substrate having recesses and through glass vias in an embodiment likewise not according to the invention,

[0042] FIG. 3 shows a vertical sectional illustration of an integrated semiconductor wafer package,

[0043] FIG. 4 shows a schematic sectional plan view of one embodiment of an integrated semiconductor wafer device with spring elements for orienting the semiconductor wafer,

[0044] FIGS. 5 and 6 show schematic sectional plan views of a glass substrate in a further embodiment having spring elements in two different mounting positions,

[0045] FIG. 7 shows a schematic vertical sectional illustration of a mounting device with a glass substrate, with glass substrate and a spring manipulator substrate being in a relative position extended from one another,

[0046] FIG. 8 shows an illustration similar to FIG. 7, with spring manipulator substrate retracted into the glass substrate, and

[0047] FIGS. 9a-9d show illustrations similar to FIGS. 7 and 8, with successive mounting intermediate steps for the mounting device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0048] FIG. 1 shows the most important features of the glass substrate 1, intended for the mounting method that is described later on. A glass substrate 1 of thickness D is provided with a plurality of recesses 2 and a spacing b. Through-holes 4, which are known as “through glass vias”, TGV for short, are formed in the walls 3, surrounding the recesses 2, of the glass substrate 1, in which through glass vias a metallization 5 is introduced, as is conventional. The glass substrate 1 consists at least substantially of an alkali-free glass, in particular an aluminoborosilicate glass or borosilicate glass.

[0049] FIG. 2 illustrates the plan view of a similar glass substrate 1 that again has recesses 2 that are rectangular in plan view. In the region of the walls 3, through-holes 4 are introduced on both sides of the recess 2 illustrated on the left in FIG. 2, flanking its narrow sides 6, 7 at a distance. Further through-holes 4 of this type are located in two rows in parallel below the recess 2 illustrated on the right in FIG. 2.

[0050] The recesses 2—as illustrated in FIG. 1—may be designed as through-openings, but also as blind holes.

[0051] The further geometric ratios in the case of the glass substrates 1 according to FIGS. 1 and 2 are as follows: its material thickness D may be for example <500 μm, preferably <300 μm or even more preferably <100 μm. The wall thickness b of the walls 3 is <500 μm, and preferred gradations are <300 μm, <200 μm, <100 μm or <50 μm, and is preferably less than the material thickness D of the glass substrate 1.

[0052] The ratio b/D of the maximum remaining wall thickness b between two recesses 2 in the glass substrate 1 to its material thickness may accordingly be D<1:1, preferably <2:3, <1:3 or <1:6.

[0053] As is apparent from FIG. 3, the size of the recesses 2 in the glass substrate 1 is selected in principle such that semiconductor components 9 are able to be received therein at the smallest possible distance from the side wall surfaces 8. The positions of the recesses 2 are selected such that they correspond to the desired subsequent positioning of the semiconductor components 9, formed as semiconductor wafers, in an integrated semiconductor component arrangement—what is known as a “chip package” or “fanout package”.

[0054] FIG. 3 now schematically shows how a glass substrate 1 may be used in the manufacture of a chip package. The distance between the side wall surfaces 8 of the walls 3 and the sides, opposite these, of the semiconductor components 9 is in this case for instance <30 μm, preferably <20 μm, <10 μm or <5 μm.

[0055] A casting compound 12 is cast into the recesses 2 in order to fasten the semiconductor components 9 in their position within the glass substrate 1. This results in a compact unit of the glass substrate 1, through-holes 4 introduced therein with a metallization 5 and semiconductor components 9 embedded in the casting compound 12. The further processing of the arrangement according to FIG. 3 by applying a redistribution layer and solder balls positioned thereon for making contact with the semiconductor components 9 is not the subject of the present invention and is described in detail in WO 2019/091728 A1.

[0056] In order to counter tilting of the component 9 during the tight fitting of semiconductor components 9 in the respective recesses 2 of the glass substrate 1, it is possible—as illustrated in FIG. 4—to form cutouts 17 for the corners of the components 9 in the glass substrate 1 in the corner regions of the respective recess 2.

[0057] Stops 18 projecting from the side wall surface 8 are additionally arranged on the glass substrate 1, thereby avoiding what is known as “overdeterminacy” in the fastening of the position of the semiconductor component 9 in the recess 2.

[0058] Finally, the preliminary fastening of the semiconductor component 9 is also additionally further optimized by two spring elements 19 in the side wall surfaces 8, opposite the stops 18, of the glass substrate 1. It should however be pointed out that the construction elements recess 17, stop 18 and spring element 19 may also be inserted separately, in each case on their own or else in various combinations, into different recesses 2 of an integrated semiconductor wafer device.

[0059] The mounting method implementing the actual invention and the mounting device accordingly used therein is described in more detail below. In this case, FIGS. 5 and 6, similarly to FIG. 4, again show a glass substrate 1 with a recess 2 for receiving a semiconductor wafer, not illustrated here. The latter is indicated only by its contour space K marked in dashed form in FIGS. 5 and 6 and which represents the outer profile taken up by the semiconductor wafer with respect to its plan view. In this embodiment, two spring elements 19 are each formed by spring arms 20 that are connected at one of their ends to the glass substrate and oriented towards one another at their other end, and which project slightly obliquely into the recess 2 in their relaxed position shown in FIG. 5. The spring arms 20 thereby engage in the contour space K. FIG. 6 illustrates the deflected, tensioned position of the spring arms 20 in which these are moved out from the contour space K and no longer intersect same.

[0060] With reference to FIGS. 7 and 8, an explanation is now given of a mounting device 21 according to the invention, whose core component is the spring manipulator substrate 22. This is manufactured similarly to the glass substrate 1 using a corresponding filigree process and has a plate-shaped base body 23 and manipulation elements 25 formed on its upper side 24 in the form of pedestal-shaped projections having a trapezoidal cross section and having lateral manipulation edges 26. The profile and the height of these manipulation elements 25 are selected such that they are able to interact in a suitable manner with the spring arms 20 of the spring elements 19. In detail, in order to displace the glass substrate 1 in relation to the spring manipulator substrate 22, the latter is moved from below counter to the glass substrate 1 such that the manipulation elements 25 run into the recess 2 and, with their manipulation edges 26, gradually grasp the spring arms 20 and bring them out of the relaxed position shown in FIGS. 5 and 7 into the tensioned, outwardly pressed position shown in FIGS. 6 and 8. This step is also shown in FIGS. 9a and 9b.

[0061] In this position, the spring arms 20 are pressed outwardly to such an extent that the contour space K is clear and a semiconductor component 9 is thus able to be placed into the recess 2 on the manipulation element 25 located therein from above without any hindrance—see FIG. 9c.

[0062] The spring manipulator substrate 22 is then lowered again, as a result of which firstly the respective semiconductor component 9 is lowered back into the recess 2 and secondly the spring aims 20 are released. These thus act on the semiconductor components 9 and orient them positionally accurately in the recess 2. Based on this manufacturing intermediate step, it is then once again possible—as described above and similarly to the prior art—to cast the semiconductor components 9 in the recesses 2 and to apply a redistribution layer and solder balls.

[0063] In terms of the device, the spring manipulator substrate 22 still needs to be supplemented by being provided with suction channels 27, 28 that are continuous in the thickness direction DR in the region of the manipulation elements 25 and between them. The suction channels 27 illustrated in the middle in FIGS. 9a-9d are flush with the walls 3 between the recesses 2 and serve to drive the movement during the relative displacement between glass substrate 1 and spring manipulator substrate 22 through the application of negative pressure p. The semiconductor components 9 are likewise fastened in their position on the manipulation elements 25 via the other suction channels 28 through the application of negative pressure p.

[0064] The deflection of the spring arms 20 is of an order of magnitude of 5-100 μm. The height h of the manipulation elements 25 and therefore its maximum penetration depth t into the recess is considerably lower, preferably less than half the thickness D of the glass substrate 1.