Photosensitive and heat-resistant material, method for producing same and use thereof

Abstract

A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO). The material includes at least ATO and/or ITO.

Claims

1. A tin-based material, consisting of a mixture of: from 50 to 100 wt. parts of graphene; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO); said material comprising at least one of ATO and ITO, wherein the tin-based material has a weight ratio between graphene and the at least one of ATO and ITO in the range from 1 to 5, and wherein the tin-based material comprises chemical bonds between its components affording heat resistance and photoresistance properties to the tin-based material.

2. The material of claim 1, wherein the weight ratio between graphene and the at least one of ATO and ITO is in the range from 3 to 4.

3. The material of claim 1, wherein the ATO and the ITO respectively have a Sn/Sb and Sn/In weight ratio in the range from 5 to 10.

4. The material of claim 1, wherein the ATO corresponds to formula SnO.sub.2:Sb.sub.2O.sub.3, or SnO.sub.2:Sb.sub.2O.sub.5.

5. The material of claim 1, wherein the ITO corresponds to formula SnO.sub.2:In.sub.2O.sub.3, or SnO.sub.2:In.sub.2O.sub.5.

6. A method of preparing the material based on graphene and ATO and/or ITO of claim 1, according to the steps of: preparing a graphene ink; preparing an ATO and/or ITO ink; adding the graphene ink and the ATO and/or ITO ink; adding, if need be, a mixture of metal nanoparticles and of metal oxide nanoparticles or a mixture of metal nanoparticles and of semiconductor nanoparticles; stirring the obtained mixture; drying the mixture to provide the material based on graphene and on ATO and/or ITO.

7. The method of claim 6, wherein the stirring of the obtained material is performed at a temperature in the range from 30 to 60 C.

8. The method of claim 6, wherein the drying of the mixture is performed by evaporating the solvents.

9. A photoresistor comprising the material of claim 1.

10. A thermistor comprising the material of claim 1.

11. A tin-based material, consisting of: from 50 to 100 wt. parts of graphene; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO); said material comprising at least one of ATO and ITO; and metal and/or semiconductor nanoparticles, wherein the tin-based material has a weight ratio between graphene and the at least one of ATO and ITO in the range from 1 to 5, and wherein the tin-based material comprises chemical bonds between its components affording heat resistance and photoresistance properties to the tin-based material.

12. The material of claim 11, further comprising from 1 to 10 wt. parts of a mixture of metal nanoparticles and of metal oxide nanoparticles.

13. The material of claim 12, wherein the mixture of metal nanoparticles and of metal oxide nanoparticles comprises nanoparticles selected from the group consisting of silver, In.sub.2O.sub.3, InZnO, ZnO, CuO, NiO nanoparticles, and mixtures thereof.

14. The material of claim 11, further comprising from 1 to 5 wt. parts of a mixture of metal nanoparticles and of semiconductor nanoparticles.

15. The material of claim 14, wherein the mixture of metal nanoparticles and of semiconductor nanoparticles comprises silver and InGaZnO nanoparticles.

16. A homogeneous tin-based material, consisting of a mixture of: from 50 to 100 wt. parts of graphene; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO); said material comprising at least one of ATO and ITO, wherein the tin-based material has a weight ratio between graphene and the at least one of ATO and ITO in the range from 1 to 5, and wherein the tin-based material comprises chemical bonds between its components affording heat resistance and photoresistance properties to the tin-based material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 illustrates the resistance of the material forming the object of the invention according to its exposure to visible daylight.

(2) FIG. 2 shows the resistance variation according to temperature for a material comprising 50% by weight of graphene and 50% by weight of ATO.

DETAILED DESCRIPTION OF THE INVENTION

(3) Preparation of the photoresistive and heat-resistant material according to the invention

(4) A graphene ink is prepared by dispersing 6 g of graphene (VORBECK) in 10 ml of cyclopentanone, for example.

(5) Concurrently, an ATO ink is prepared by dispersing 6 g of ATO (DUPONT) in 10 ml of cyclopentanone.

(6) The graphene and ATO inks are then mixed to obtain a graphene/ATO weight ratio of 4.

(7) This mixture is then added from 0 to 10 mg of a mixture of silver, In.sub.2O.sub.3, InZnO, ZnO, CuO, NiO nanoparticles, or of silver and InGaZnO nanoparticles according to another embodiment.

(8) The resulting mixture is then mechanically stirred at a 60 C. temperature.

(9) The obtained solution is then dried by evaporation of the solvents at 100 C., under air.

(10) Preparation of a photoresistor or of a thermistor according to the invention

(11) The mixture obtained hereabove is deposited, before evaporation of the solvents, on a substrate by silk screening.

(12) The PEN substrate has a 125-micrometer thickness while 5 micrometers of mixture have been deposited.

(13) After the deposition of the mixture, an anneal is carried out at a 100 C. temperature for 20 minutes.

(14) The photosensitivity properties of the photoresistor are illustrated in FIG. 1. Indeed, the resistance of this material varies from nearly 13,000 ohms when it is not exposed to light to 12,000 ohm when it is exposed to daylight. This material has an extremely short reaction time, in the order of from 1 microsecond to 10 ms.

(15) The resistance variation of this material according to temperature is illustrated in FIG. 2. The resistance of the material regularly decreases as the temperature increases. While the resistance of the material is greater than 32,000 ohm at 20 C., it is equal to 29,500 ohm at 90 C.