Semiconductor laser diode and method of fabricating the same

Abstract

Provided are a semiconductor laser diode and a method for fabricating the same. The semiconductor laser diode includes a c-plane substrate, a group III nitride layer disposed on the c-plane substrate, and a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the group III nitride layer in the stated order, wherein each of the first semiconductor layer and the second semiconductor layer is exposed to the outside of the semiconductor laser diode.

Claims

1. A semiconductor laser diode comprising: a c-plane substrate; a group III nitride layer disposed on the c-plane substrate; a mask pattern disposed on the group III nitride layer, the mask pattern being formed by forming a mask layer by using plasma enhanced chemical vapor deposition (PECVD) and using a photolithography method with respect to the mask layer; a first semiconductor layer, an active layer, and a second semiconductor layer disposed, in order, on the group III nitride layer, the first semiconductor layer having a pair of faces to face each other, and the active layer and the second semiconductor layer are disposed on a first face of the pair of faces, and a second face of the pair of faces is not covered by the active layer and the second semiconductor layer; a first electrode disposed on the second face of the first semiconductor layer, such that the first electrode is not disposed on any other face of the first semiconductor layer; and a second electrode disposed on the first face of the first semiconductor layer with the active layer and the second semiconductor layer therebetween, such that the second electrode is not disposed on any other face of the first semiconductor layer, wherein each of the first semiconductor layer and the second semiconductor layer is exposed to an outside of the semiconductor laser diode, wherein the first semiconductor layer is selectively grown on at least one predetermined portion of the group III nitride layer based on the mask pattern, and wherein the first semiconductor layer forms a (11-22) plane which is a semi-polar plane.

2. The semiconductor laser diode according to claim 1, wherein the first semiconductor layer includes an n-type semiconductor layer, the second semiconductor layer includes a p-type semiconductor layer, the first electrode includes an n-type electrode, and the second electrode includes a p-type electrode.

3. The semiconductor laser diode according to claim 1, wherein the first semiconductor layer includes a p-type semiconductor layer, the second semiconductor layer includes an n-type semiconductor layer, the first electrode includes a p-type electrode, and the second electrode includes an n-type electrode.

4. The semiconductor laser diode according to claim 1, wherein the mask pattern comprises at least one from among a SiO.sub.2-based material and a SiN.sub.x-based material.

5. The semiconductor laser diode according to claim 1, wherein each of the first semiconductor layer, the active layer, and the second semiconductor layer comprises a GaN-based material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) These and/or other aspects will become apparent and more readily appreciated from the following description of exemplary embodiments, taken in conjunction with the accompanying drawings in which:

(2) FIG. 1A illustrates non-polar planes (i.e., an a-plane and an m-plane) of a crystal structure of GaN;

(3) FIG. 1B illustrates a semi-polar plane in a crystal structure of GaN;

(4) FIG. 2 is a sectional view that schematically illustrates a structure of a semiconductor laser diode, according to an exemplary embodiment;

(5) FIG. 3 is a sectional view that schematically illustrates a structure of a semiconductor laser diode, according to an exemplary embodiment; and

(6) FIGS. 4A, 4B, 4C, and 4D are sectional views that illustrate a process for fabricating a semiconductor laser diode, according to an exemplary embodiment.

DETAILED DESCRIPTION

(7) Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present exemplary embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the exemplary embodiments are merely described below, by referring to the figures, to explain aspects of the detailed description.

(8) Throughout the specification, when a region is referred to as being connected to another region, the region may be directly connected to the other region or may be electrically connected to the other region via an intervening device. In addition, when a region is referred to as including an element, unless otherwise stated, the region may further include other elements.

(9) FIG. 1A illustrates non-polar planes (i.e., an a-plane and an m-plane) of a crystal structure of GaN, and FIG. 1B illustrates a semi-polar plane in a crystal structure of GaN.

(10) Referring to FIGS. 1A and 1B, the non-polar plane is a plane, such as an a-plane or an m-plane, that has a crystal orientation which is perpendicular to a c-axis.

(11) The semi-polar plane is a plane that has a crystal orientation between 0 and 90 with respect to a (0001) plane or a (000-1) plane. The semi-polar plane extends diagonally across a hexagonal unit cell and forms a non-90 angle with respect to the c-axis. In particular, as compared with the (0001) plane which is a polar plane, since a polar vector is inclined with respect to a growth direction, an influence of polarity on the semi-plane is reduced. Non-limiting examples of the semi-polar plane that are generally observed in group III nitrides may include (11-22), (1-101), (10-11), (10-13), (10-12), (20-21), and (10-14) planes, and the like. The semi-polar plane may be arranged as illustrated in FIG. 1B, and for example, as illustrated in FIG. 1B, a (11-22) semi-polar GaN plane is inclined at about 58 with respect to the (0001) plane.

(12) FIG. 2 is a sectional view that schematically illustrates a structure of a semiconductor laser diode 100, according to an exemplary embodiment.

(13) Referring to FIG. 2, the semiconductor laser diode 100 may include a c-plane substrate 110, a group III nitride layer 120, a mask pattern 130, a first semiconductor layer 140, a first electrode 145, a second semiconductor layer 150, a second electrode 155, and an active layer 160.

(14) The c-plane in the c-plane substrate 110 is a (0001) plane. The c-plane substrate 110 may include at least one from among sapphire, silicon carbide (SiC), lithium aluminate, spinel and the like. According to at least one other exemplary embodiment, the c-plane substrate 110 may further include group III nitrides and alloys thereof (such as, for example, any one or more of gallium nitride (GaN), aluminum nitride (AlN), and the like).

(15) The group III nitride layer 120 may be grown on the c-plane substrate 110. The group III nitride may refer to semiconductor compounds formed from a group III element and nitrogen. Examples of the group III element may include aluminum (Al), gallium (Ga), Indium (In), and the like, which may be used alone or in combination. The group III nitride may include GaN, AlN, InN, AlGaN, AlInN, GaInN, AlInGaN, and the like.

(16) The group III nitride layer 120 may be formed to a thickness of, for example, about 1 m to about 10 m, or about 2 m to about 5 m. To form the group III nitride layer 120, growth may be performed, for example, at a temperature of about 800 C. to about 1100 C. and at a pressure of about 200 torr to about 500 torr, for a duration of about 60 minutes to about 300 minutes. The above specific growth conditions are examples that are provided for illustrative purposes, and may be modified based on various characteristics, such as, for example, sizes of the substrate and the like.

(17) According to an exemplary embodiment, before the group III nitride layer 120 is grown on the c-plane substrate 110, an intermediate layer or a buffer layer may be formed. The intermediate layer (buffer layer) may be optionally formed in order to obtain better properties of the group III nitride layer 120. The intermediate layer may include other materials which are suitable for promoting growth of the non-polar, particularly semi-polar group III nitride layer 120 as well as III-V compounds, such as AlN, AlGaN, and the like. As such, when the group III nitride layer 120 is grown on the intermediate layer, high-density nuclei can be generated due to reduction in an interfacial energy, as compared with the case of growing the group III nitride layer directly on a heterogeneous substrate. In addition, since plane growth is expedited due to promotion of lateral growth, lattice mismatch can be somewhat mitigated. Deposition or epitaxial growth techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) and the like, can be utilized to grow the group III nitride layer.

(18) The optionally introduced intermediate layer may have a thickness of at least about 10 nm to about 50 nm, without being limited thereto. In addition, to form the intermediate layer, process conditions may be adjusted to the atmospheric pressure and a temperature of about 550 C. to about 750 C. However, it should be understood that the above process conditions are just an example and are not limited to the above numerical range.

(19) The mask pattern 130 may be formed on the group III nitride layer 120. The mask pattern may include an insulating material and at least one from among SiO.sub.2, SiN.sub.x (for example, Si.sub.3N.sub.4), and the like. The mask pattern 130 may be formed in a <11-20> direction. A process of forming the mask pattern 130 will be described in detail below.

(20) The first semiconductor layer 140, the active layer 160, and the second semiconductor layer 150 may be formed on the group III nitride layer 120 in the stated order. The first semiconductor layer 140 may be grown on the group III nitride layer 120 by a lateral growth or overgrowth method. Due to the presence of the mask pattern 130, the first semiconductor layer 140 can be selectively grown on at least one predetermined portion of the group III nitride layer 120. The first semiconductor layer 140, which is selectively grown, can form a (11-22) plane, which is a semi-polar plane. After the first semiconductor layer 140 is formed, the active layer 160 and the second semiconductor layer 150 may be grown on the first semiconductor layer 140 in the stated order. After the active layer 160 and the second semiconductor layer 150 are grown, the active layer 160 and the second semiconductor layer 150 that are disposed on one plane out of two semi-polar planes of each structure formed by the first semiconductor layer 140 may be etched. According to the etching process described above, a structure in which both the first semiconductor layer 140 and the second semiconductor layer 150 are exposed to the outside of the semiconductor laser diode 100 can be obtained. in particular, both the first semiconductor layer 140 and the second semiconductor layer 150 may be in direct contact with the outside atmosphere after etching.

(21) Materials for forming the first semiconductor layer 140 and the second semiconductor layer 150 are not particularly limited and may include any of various semiconductor materials (III-V, II-VI and the like) known in the art, such as, for example, GaN, InN, AlN, InP, InS, GaAs, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, Zno, Al.sub.xGa.sub.1-xN, In.sub.xGa.sub.1-xN, In.sub.xGa.sub.1-xAs, Zn.sub.xCd.sub.1-xS (0<x<1) and the like. These materials may be used alone or in combination. In addition, the first semiconductor layer 140 and the second semiconductor layer 150 may be of different types. However, a group III nitride may be used for both the first and second semiconductor layers in order to effectively realize homoepitaxy properties.

(22) The active layer 160 may include at least two materials selected from among, for example, GaN, AlN, InN, InGaN, AlGaN, InAlGaN, and the like. Among these materials, a material having a small energy bandgap may become a quantum well and a material having a large energy bandgap may become a quantum barrier, and both single and multiple quantum well structures may be realized.

(23) The first semiconductor layer 140 may be of an n-type and the second semiconductor layer 150 may be of a p-type, and thus have opposite conductive properties. When the first semiconductor layer 140 is an n-type semiconductor layer, the second semiconductor layer 150 may be a p-type semiconductor layer, and when the first semiconductor layer 140 is a p-type semiconductor layer, the second semiconductor layer 150 may be an n-type semiconductor layer.

(24) The first electrode 145 may be formed on the first semiconductor layer 140, and then exposed to the outside of the of the semiconductor laser diode 100 by etching. The second electrode 155 may be formed on the second semiconductor layer 150. Each of the electrodes 145, 155 may include, for example, any of platinum (Pt), palladium (Pd), aluminum (Al), gold (Au), nickel/gold (Ni/Au), and the like. These materials may be used alone or in combination.

(25) When the first semiconductor layer 140 is an n-type semiconductor layer and the second semiconductor layer 150 is a p-type semiconductor layer, the first electrode 145 may be an n-type electrode and the second electrode 155 may be a p-type electrode, and when the first semiconductor layer 140 is a p-type semiconductor layer and the second semiconductor layer 150 is an n-type semiconductor layer, the first electrode 145 may be a p-type electrode and the second electrode 155 may be an n-type electrode.

(26) FIG. 3 is a sectional view that schematically illustrates a structure of a semiconductor laser diode, according to another exemplary embodiment. Referring to FIG. 3, a semiconductor laser diode 200 according to the current exemplary embodiment may include a c-plane substrate 210, a group III nitride layer 220, a first semiconductor layer 240, a first electrode 245, a second semiconductor layer 250, a second electrode 255, and an active layer 260. The c-plane substrate 210 and the group III nitride layer 220 may include the same material and be formed by the same method, as described above with reference to FIG. 2.

(27) A mask pattern (not shown) may be formed in a <11-20> direction on the group III nitride layer 220. After the mask pattern is formed, the first semiconductor layer 240, the active layer 260, and the second semiconductor layer 250 may be formed on the group III nitride layer 220 in the stated order. As described above, the first semiconductor layer 240 may be selectively grown on at least one predetermined portion of the group III nitride layer 220, and the first semiconductor layer 240, which is selectively grown, may form a (11-22) plane, which is a semi-polar plane. Then, the active layer 260 and the second semiconductor layer 250 may be grown on the first semiconductor layer 240 in the stated order.

(28) Next, the mask pattern formed on the group III nitride layer 220 may be removed by etching, and the first electrode 245 may be formed at the position where the mask pattern was etched. In addition, the second electrode 255 may be formed on the second semiconductor layer 250.

(29) When the first semiconductor layer 240 is an n-type semiconductor layer and the second semiconductor layer 250 is a p-type semiconductor layer, the first electrode 245 may be an n-type electrode and the second electrode 255 may be a p-type electrode, and when the first semiconductor layer 240 is a p-type semiconductor layer and the second semiconductor layer 250 is an n-type semiconductor layer, the first electrode 245 may be a p-type electrode and the second electrode 255 may be an n-type electrode.

(30) FIGS. 4A, 4B, 4C, and 4D are sectional views which illustrate a process for fabricating the semiconductor laser diode 100, according to an exemplary embodiment.

(31) Referring to FIG. 4A, a group III nitride layer 120 may be grown on a c-plane substrate 110. The group III nitride layer 120 may be grown by using a general layer growth technique, for example, any of metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), or the like.

(32) A mask pattern 130 may be formed on the group III nitride layer 120. To form the mask pattern 130, a mask layer (not shown) may be formed first, for example, by using plasma enhanced chemical vapor deposition (PECVD). Next, the mask pattern 130 may be formed in a <11-22> direction on the group III nitride layer 120 by using a general photolithography method. A region between the mask patterns 130 may be referred to as a window region.

(33) According to an exemplary embodiment, the mask pattern 130 may have a width that falls within a range of between about 2 m and about 50 m (or about 2 m to about 10 m), and the window region may have a width that falls within a range of between about 2 m and about 20 m (or between about 2 m and about 10 m). In addition, according to an exemplary embodiment, the mask pattern 130 may have a thickness that falls within a range of between about 500 and about 2000 , without being limited thereto.

(34) Referring to FIG. 4B, a first semiconductor layer 140 is grown on the group III nitride layer 120. Due to the presence of the mask pattern 130, the first semiconductor layer 140 can be selectively grown on at least one predetermined portion of the group III nitride layer 120. The first semiconductor layer 140, which is selectively grown, can form a (11-22) plane, which is a semi-polar plane.

(35) Referring to FIG. 4C, after the first semiconductor layer 140 is formed, an active layer 160 and a second semiconductor layer 150 may be grown on the first semiconductor layer 140 in the stated order. The first semiconductor layer 140, the active layer 160, and the second semiconductor layer 150 form a (11-22) plane, which is a semi-polar layer. In addition, the first semiconductor layer 140, the active layer 160, and the second semiconductor layer 150 may form a plurality of structures. The plurality of structures may have the same shape and a repetitive pattern.

(36) The first semiconductor layer 140 may be of an n-type and the second semiconductor layer 150 may be of a p-type, and as a result, the two semiconductor layers 140 and 150 may have opposite conductive properties. When the first semiconductor layer 140 is an n-type semiconductor layer, the second semiconductor layer 150 may be a p-type semiconductor layer, and when the first semiconductor layer 140 is a p-type semiconductor layer, the second semiconductor layer 150 may be an n-type semiconductor layer.

(37) Referring to FIG. 4D, in the plurality of structures described above, the active layer 160 and the second semiconductor layer 150 that are disposed on one plane out of two planes of each of the plurality of structures may be etched. According to the above etching process, a structure in which both the first semiconductor layer 140 and the second semiconductor layer 150 are exposed to the outside of the semiconductor laser diode 100 can be obtained.

(38) A first electrode 145 may be formed on the first semiconductor layer 140, which is exposed to the outside of the semiconductor laser diode 100 by etching. A second electrode 155 may be formed on the second semiconductor layer 150. The first electrode 145 and the second electrode 155 may include, for example, any of platinum (Pt), palladium (Pd), aluminum (Al), gold (Au), nickel/gold (Ni/Au), and the like. These materials may be used alone or in combination.

(39) When the first semiconductor layer 140 is an n-type semiconductor layer and the second semiconductor layer 150 is a p-type semiconductor layer, the first electrode 145 may be an n-type electrode and the second electrode 155 may be a p-type electrode, and when the first semiconductor layer 140 is a p-type semiconductor layer and the second semiconductor layer 150 is an n-type semiconductor layer, the first electrode 145 may be a p-type electrode and the second electrode 155 may be an n-type electrode.

(40) According to the disclosed exemplary embodiments, a high-quality non-polar or semi-polar plane is formed at low cost through patterning and regrowth processes on a c-plane sapphire substrate, so that an internal quantum efficiency of a semiconductor laser diode can be improved by mitigating problems due to growth of a polar nitride. In addition, a stable green laser diode not suffering from a wavelength shift at high current density can be formed.

(41) It should be understood that exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each exemplary embodiment should typically be considered as available for other similar features or aspects in other exemplary embodiments.

(42) While one or more exemplary embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present inventive concept as defined by the following claims.