INTEGRATED CIRCUIT WITH COOLING ARRAY

Abstract

The invention relates to an integrated circuit cooling array, preferably for a microprocessor or cooling apparatus, consisting of a dielectric substrate with doped and distinguished areas for the realization of at least one microelectronic component forming an integrated circuit, and at least one thermoelectric component forming a cooling array. The cooling array is characterized in that the thermoelectric component 1 comprises at least one first contact area, at least one second contact area and at least one cooling section whereat the cooling section is arranged between the first and the second contact area and consists of at least one thermal element 29, which is supplied with voltage by the first contact area and the second contact area through a control unit, whereat the thermal element 29 consists of at least one doped layer and a second doped layer, which are in such a way connected by a bridge element 53, 58, 59, 73, 83, 84, 92 that the bridge element 53, 58, 59, 73, 83, 84, 92 rests only partially on the first doped layer and/or the second doped layer. By means of the cooling array according to the invention compact and/or more efficient integrated circuits may be realized, since a sufficiently free heat flow from the inside of the integrated circuit is guaranteed.

Claims

1. Integrated circuit cooling array, preferably for a microprocessor or cooling apparatus, consisting of a dielectric substrate with doped and distinguished areas for the realization of at least one thermoelectric component forming a cooling array, wherein the thermoelectric component comprises at least one first contact area, at least one second contact area and at least one cooling section, whereat the cooling section is arranged between the first and the second contact area and consists of at least one thermal element, which is supplied with voltage by the first contact area and the second contact area through a control unit, and whereat the thermal element consists of at least one first doped layer and at least one second doped layer, which are in such a way connected by a bridge element that the bridge element rests only partially on the first doped layer and/or the second doped layer.

2. Integrated circuit cooling array according to claim 1, wherein a length of a section of the bridge element resting on the first or second doped layer x, a length of the first or second doped layer y and a width of the first or second doped layer z comply with the conditions 0.2x/y0.5 and zx.

3. Integrated circuit cooling array according to claim 1, wherein a cooling section consists of several thermal elements, which are each connected in series between the first and the second contact area, and/or in that a cooling section consists of several thermal elements which are each connected in series between the first and the second contact area and additional thermal elements are at least partially connected in parallel with individual thermal elements.

4. Integrated circuit cooling array according to claim 1, wherein the contact areas between the bridge element and the first and second doped layer differ from each other in regard to size.

5. Integrated circuit cooling array according to claim 1, wherein the thermoelectric component is arranged on the substrate or within the substrate.

6. Integrated circuit cooling array according to claim 5, wherein several thermoelectric components exist, which are arranged next to each other and/or above one another within the substrate, and/or that several adjoining thermoelectric components are arranged on the substrate.

7. Integrated circuit cooling array according to claim 6, wherein several thermoelectric components are arranged above each other, whose first and second contact areas are connected by at least one permanent or switchable VIA-connection (Vertical Interconnect Access), whereat the switching of a VIA-connection occurs through the control unit.

8. Integrated circuit cooling array according to claim 1, wherein several cooling sections are arranged to run parallel between the first and the second contact area.

9. Integrated circuit cooling array according to claim 1, wherein each cooling section is to be supplied with voltage independently of the other ones.

10. Integrated circuit cooling array according to claim 1, wherein at least two cooling sections exist, which run in a horizontal angle to each other or at least two cooling sections exist, which run in a periodically alternating distance to each other.

11. Integrated circuit cooling array according to claim 1, wherein, the horizontal angle between two thermal elements of a cooling section or between two cooling sections or between two segments of two cooling sections measures between 5 and 85, preferably between 30 and 40, and particularly preferably between 10 and 20.

12. Integrated circuit cooling array according to claim 1, wherein several thermal elements or cooling sections of a thermoelectric component are arranged above each other in the substrate.

13. Integrated circuit cooling array according to claim 1, wherein a first contact area and several second contact areas exist, whereat at least one cooling section each is arranged between the first contact area and the several second contact areas, and/or in that the first contact area is surrounded by several second contact areas, whereat at least one cooling section each is arranged between the first contact area and the second contact areas.

14. Integrated circuit cooling array according to claim 1, wherein several cooling sections extend from the first contact area in the form of a star structure to a second contact area surrounding the first contact area or to several second contact areas surrounding the first contact area.

15. Integrated circuit cooling array according to claim 1, wherein temperature sensors are arranged between at least two cooling sections, which interact with the control unit.

16. Integrated circuit cooling array according to claim 9, wherein the control unit comprises a circuit element for the selective voltage supply of one of several thermoelectric components or one of several cooling sections.

17. Integrated circuit cooling array according to claim 1, wherein the control unit comprises a transistor, which supplies voltage through a blocking diode to the thermoelectric component, or in that the control unit comprises several transistors, which are connected in parallel and each supply voltage through a blocking diode to a thermoelectric component simultaneously or at staggered intervals in regard to other thermoelectric components.

18. Integrated circuit cooling array according to claim 7, wherein the control unit switches existing switchable VIA-connections independently from each other.

19. Integrated circuit cooling array according to claim 18, wherein the control unit comprises a programmable device with a high frequency pulse generator and a counting unit, which can be triggered by the pulse generator, whereat the VIA-connection between at least two thermoelectric components is switched in relation to the counter value of the counting unit by the control unit.

20. Integrated circuit cooling array according to claim 1, wherein the first doped layer of a thermal element is an n-doped layer, and in that the second doped layer of a thermal element is a p-doped layer.

21. Integrated circuit cooling array according to claim 1, wherein the bridge element consists of a highly polysilicon, a metal or a metal alloy.

22. Integrated circuit cooling array according to claim 1, wherein at least one shielding layer exists, which is arranged to adjoin to the warmer side of a thermoelectric component.

23. Integrated circuit cooling array according to claim 22, wherein the shielding layer comprises an electrically isolating material, whereat the isolating material consists of a high-k and/or low-k dielectric medium, in particular silicon dioxide, AgO, TiO.sub.2, HfO.sub.2 or Al.sub.2O.sub.3.

24. Integrated circuit cooling array according to claim 1, wherein at least one cooling layer exists, which contacts at least one bridge element on the cooler side of a thermoelectric component, which consists of a heat conductive material.

25. Integrated circuit cooling array according to claim 1, wherein the integrated circuit comprises at least one functional unit, which is arranged between the thermoelectric component and/or between cooling sections of a thermoelectric component and/or which is arranged at the warmer or cooler side of a cooling section.

26. Integrated circuit cooling array according to claim 25, wherein the functional unit comprises a sensor, in particular a heat sensor or optical sensor, a rectifier, in particular a diode, a switching element, in particular a transistor, preferably a MOSFET such as IGFET, NMOS, PMOS, VMOS, a control element, a programmable device, in particular a microprocessor, a microcontroller or a programmable logic such as FPGA or PLD, a memory element, such as DRAM, ROM, SRAM, a solar panel, a laser diode, a light-emitting diode or a micro strip.

27. Integrated circuit cooling array according to claim 5, wherein a thermoelectric component is arranged on the substrate or within one of the top layers of the substrate, whereat the waste heat of the microelectronic components are used for generating voltage.

28. Integrated circuit cooling array according to claim 1, wherein the integrated circuit is designed for total electric currents between 0.5 pA and 500 mA, in particular between 1 mA and 200 mA, preferably between 20 A and 120 A and particularly preferably between 10 A and 1 A.

29. Integrated circuit cooling array according to claim 1, wherein an intermediate layer is arranged between to thermoelectric components arranged above each other in the substrate, which determines a distance between the thermoelectric components.

Description

[0052] The invention is further explained with the help of the figures.

[0053] It shows

[0054] FIG. 1 a circuit diagram for a thermoelectric component of an integrated circuit with two cooling elements,

[0055] FIG. 2 a schematic view of a possible mounting position of the thermoelectric component in a perspective view,

[0056] FIG. 3 a temperature-time diagram of a cooling flow,

[0057] FIG. 4 a schematic view of the individual components of a thermoelectric component and a cooling element,

[0058] FIG. 5 a layer composition of a first embodiment with two cooling elements,

[0059] FIG. 6 a layer composition with three cooling elements,

[0060] FIG. 7 a layer composition with two cooling elements as thermoelectric generators, and

[0061] FIG. 8 a layer composition of a fourth embodiment with a total of four cooling elements.

[0062] FIG. 1 shows a circuit diagram with the individual components for the assembly of a thermoelectric component 1. A trigger unit 2 is connected with two transistors 4 through a trigger line 3, whereat the trigger unit 2 and the transistors 4 are supplied with a positive potential 5 by a voltage supply. The trigger unit 2 and the transistors 4 are parts of a control unit. On the output side of the transistor 4 a line 6 branches out, passes two protective diodes 7, 8 to a cooling element 15 each. The cooling elements 15 are thermal elements or cooling sections of a thermoelectric component. The protective diodes 7, 8 could, e.g., consist of Schottky protective diodes and direct the current flow into the direction of the cooling elements 15. Both of the cooling elements 15 are connected with the zero potential 9 on the one side, and are supplied with voltage by the transistors 4 through the two protective diodes 7,8 on the other side.

[0063] Due to the power supply it is achieved that the cooling elements 15 generate a cooling for cooling microelectronic components, e.g. those of a microprocessor. For this reason it is intended, that all components of the circuit diagrams are additionally integrated into an integrated circuit. This integration can occur at least once, preferably several times according to the embodiments of FIGS. 4 to 8. The occurring cooling results from the Peltier effect as is intrinsically known. The basis of the Peltier effect is the contact of two materials which have a different energy level of conduction bands, in particular a p-doped semiconducting material on the one side and a n-doped semiconducting material on the other one, which are electrically connected by a bridge element. Once electricity runs through two contact points of these semiconducting materials, which are arranged one after the other, heat energy has to be absorbed at one of the contact points in order to transport electrons into the energetic higher conduction band of the adjoining semiconducting material, so that a cooling effect occurs. In the other contact point the electrons fall from a higher to a lower energy level, so that in this case a cooling occurs at that spot where the electrons transfer from the n-doped semiconductor to the p-doped semiconductor.

[0064] FIG. 2 shows an integrated circuit 10 in a perspective schematic view, in which the structures of a microprocessor or similar components are integrated. Due to the high power consumption of a microprocessor, e.g., a considerable amount of heat develops, so that an additional cooling of the complete integrated circuit 10 does not only occur through a cooling system and a fan, but is additionally necessary within the integrated circuit 10. The invention at hand therefore suggests integrating at least one additional thermoelectric component 1 with at least one cooling element 15 into an integrated circuit 10, which is either arranged between the individual layers of the integrated circuit or which is arranged in the lowest or highest position of the integrated circuit 10. However, there is also the possibility to place several thermoelectric components 1 immediately below the individual components in an integrated circuit, for instance when said integrated circuit consists of several parallel running microprocessors, which are being temporarily switched on and off by a corresponding control logic, such as when a significant rise in temperature occurs and a partial shutdown or, if need be, cooling is required. Therefore, if microprocessors are integrated in multiple arrangements in an integrated circuit 10, each individual microprocessor can be assigned to such a thermoelectric component 1, whereat it may feature a simple structure, but may also be structured more complexly according to FIGS. 4 to 8. FIG. 2 merely shows one position of the thermoelectric component 1 by means of the dotted line in a schematic view, but which was chosen arbitrarily and may be changed within the integrated circuit 10 at will.

[0065] FIG. 3 shows a temperature-time diagram of a typical cooling flow for a cooling element 15. The temperature of a cooling element 15 drops from a temperature of above 0 to as low as 30, until the temperature further stabilizes at a value of about 15. In order to take advantage of the extreme cooling temperature, the cooling element 15 is only supplied with voltage in the active phase until a point of time x when a temperature of 30 is reached. The cooling element 15 is then transferred into a resting phase, whereas a second or one further cooling element 15 after the other is supplied with power, in order to use the cooling effect repeatedly. By using several individual cooling elements 15, the maximal temperature drop during an active phase 16 can be used to cool down an integrated circuit, while the cooling element 15 adjusts to the surrounding temperature during the rest phase 17. Insofar as several cooling elements 15 are used in that way a continuous cooling can be achieved in spite of the regulating temperature of the cooling element 15 in order to realize a cooling of below 15.

[0066] FIG. 4 shows a schematic view of the assembly of a thermoelectric component 1 according to the invention with at least one cooling element 15, as it is to be realized within an integrated circuit, such as a microprocessor. The thermal elements 29 of FIG. 4 correspond to the cooling element 15 of FIG. 1. In order to apply voltage, a first contact area 20 is formed, which is supplied with a positive voltage under normal circumstances. A second contact area 21, on the other hand, is connected to the zero potential, whereat the contact area 21 is dimensioned so that contacting of the cooling element 15 becomes possible. The thermoelectric component 1 within the integrated circuit consists of a first contact area 22, which is meant as a contact for the zero potential and features cooling sections 27, 28, 30, 31, 32. A voltage supply occurs through the first contact area 20 by two transistors 24, 25 switched in parallel, which are simultaneously or subsequently switched for power supply in order to reduce the starting current. The current may be interrupted through an additional circuit element 26. An interruption of the current can occur when a part of the integrated circuit is permanently inactive, or a targeted thermoelectric component 1 may be switched on during a rise in temperature within the integrated circuit to cool down the temperature. The electric current within such a thermoelectric component 1 occurs through a first contact area 22, the cooling sections 27, 28, 30, 31, 32 and the second contact area 23. The first contact area 22 is connected electrically to the second contact area 23 through cooling sections, whereat three different connections are shown in FIG. 4.

[0067] With a first embodiment the first contact area 22 can be connected to the second contact area 23 through several parallel running cooling sections arranged in equidistant distances, whereat the individual cooling sections 27, 28 consist of thermal elements 29. When the cooling sections 27, 28 run parallel in equidistant distances, a constant cooling of the temperature of an area is achieved. Additional sensor elements 33 may be arranged between the individual cooling sections 27, 28, which trigger a switching process depending on the present temperature gradients, such as interrupting or engaging the current supply to the first contact area 22. The arrangement of a first contact area 22, a second contact area 23, the cooling sections 27, 28 and the thermal elements 29 may be arranged in layers above each other.

[0068] Alternatively, there is the possibility to arrange the cooling sections under an angle , so that a first cooling section 28 and a second cooling section 30 exist, whereat due to the given angle and the varying distance between the cooling sections 28, 30 a quicker cooling is achieved in the proximity of the first contact area 22, while a noticeably slower cooling occurs with a growing distance, particularly in the proximity of the second contact area 23. This arrangement shows a second embodiment, which may also be arranged in multiple arrangements in layers above each other.

[0069] Alternative, there is the possibility to electrically connect the first contact area 22 with the second contact area 23 through two thermoelectric cooling sections 31, 32. In that case a varying temperature drop is achieved due to the periodically changing distance of the two cooling sections 31, 32. With this embodiment, the third example of FIG. 4 is shown. As with the first example, temperature sensors 33 may be used with the second and third examples, whereat said temperature sensors 33 allow for a selective voltage supply of the cooling sections 31, 32 through a control unit.

[0070] FIG. 5 shows a schematic view of a thermal element 29 in a layered arrangement, whereat generally several thermal elements 29 may be arranged next to each other and/or above one another in a semiconducting chip. Here the further possibility of electrically running individual thermal elements 20 in series or in parallel exists, in order to use the Peltier effect on the one hand and to deliberately cool a region of the integrated circuit through several thermal elements 29.

[0071] With two electric contact areas 50, 51 there is the possibility of connecting an individual thermal element 29 with further thermal elements 29 in parallel or in series or to use said contact areas 50, 51 for voltage supply. The entire arrangement is embedded in a substrate 52 here, which can hold a plurality of similar thermal elements 29, and additionally holds the individual microelectronic components of, e.g., a microprocessor, whereat a direct allocation of the thermal elements 29 to the structure of the microprocessor may be intended, so that a targeted cooling may occur in those areas emitting a lot of heat.

[0072] The thermal element 29 consists in addition to the two contact areas 50, 51 of a first upper bridge element 53, which is connected to a p- or n-doped semiconducting material through a contact area 54, 55. The p-doped semiconducting material 56 is electrically connected through a lower bridge element 58 with the first contact area 50, while the n-doped semiconducting material 57 is connected to the second electric contact area 51 through a second lower bridge element 59. Depending on the direction of the current, a reverse doping of the semiconducting materials 56, 57 may occur. Each individual component of the thermal element 29 is connected to the substrate 52 through an adhesive layer 60, 61, 62, 63, 64.

[0073] Furthermore, this elementary arrangement of a thermal element 29 shows a distinctive feature, namely such, that both doped semiconducting materials 56, 57 are connected with the upper bridge element 53 through the contact areas 54, 55 with different dimensions, without the need for adapting the form of the doped semiconducting materials 56, 57. The contact areas 54, 55 can already be varied by having the semiconducting materials 56, 57 be arranged out of alignment in regard to the upper bridge 53. Here the rule applies, that the bigger the contact areas 54, 55, the smaller the heat transport. The heat dissipation occurs through the exposed areas 65, 66 of the first doped semiconducting material 56 or the respective areas 67, 68 of the second doped semiconducting material 57. This simple structure of a thermal element 29 is also the basis for further, more complex embodiments.

[0074] FIG. 6 shows the assembly of a thermoelectric cooling array 70 consisting of several thermal elements 29 in a schematic view. The cooling array 70 also features a first contact area 71 and a second contact area 72, which is either used for connecting different cooling arrays 70 with each other or for voltage supply. A first n-doped semiconducting material 74 and a second p-doped semiconducting material 75 are connected through an upper bridge element 73, whereat the connection occurs through differently sized contact areas 76, 77. The background to this is that when considering the current through the smaller contact area 76 more heat is emitted up, i.e. to be emitted from the substrate 78, while the larger contact area 77 emits less heat down into the substrate 78. The first n-doped semiconductor material is further connected to a second n-doped semiconductor material 80 through a contact area 79, while the p-doped semiconductor material 75 is connected to a further p-doped semiconductor material 82 through a contact area 81. Due to the two step-lined n- or p-doped semiconducting materials 74, 75, 80, 82 a higher cooling capacity is achieved.

[0075] For the first p-doped semiconducting materials 74, 75 Bi.sub.2Te.sub.3, BN, TiN, SiGeN, PbTeN, e.g., is used as a base material, and the same materials can be used as base material for the second n-doped semiconducting materials 80, 82. In general, the base material to be used for the p-doped and n-doped semiconducting materials depend on the operating temperature of the integrated circuit cooling array. The second n-doped semiconducting materials 80, 82 are again connected with a first contact area 71 or respectively with the second contact area 72 through a lower bridge element 83, 84, so that a current flow through the conducting layers can be achieved. The lower bridges 82, 84 are connected with the substrate 78 through an adhesive layer 87, 88, while the first doped semiconducting materials 74, 75 are connected through an adhesive layer 89, 90 and the upper bridge element 73 is connected with the substrate 79 through an adhesive layer 91. The alternative shown here additionally features a further bridge element 92, which connects a first p-doped semiconducting material 93 and a second n-doped semiconducting material 94, which are in return connected with the substrate 78 though adhesive layers 95, 96, 97. A direct electric contacting of these third doped semiconducting materials 93, 94 is not available, in contrast to the other arrangement. The third semiconducting materials 93, 94 are embedded in the substrate 78, which is dielectric. The distance A between the second doped semiconducting material 80 and the third doped semiconducting material 93 and the distance B between the second doped semiconducting material 82 and the third doped semiconducting material 94 was chosen to be unequal, but was kept so small, that the substrate 78 becomes conductive for this short distance for temperatures around 30 and thus a voltage supply of the additional thermal element 98 occurs. This way it can be achieved, that with a cooling of about 30 in spite of the resulting effect of a subsequent rise in temperature, due to the additional cooling the temperature of about 30 can be maintained for a longer period of time.

[0076] FIG. 7 shows a schematic arrangement of a thermoelectric generator 100 according to the Seebeck effect. The thermoelectric generator 100 consists of an upper bridge element 101, which is connected to a first n-doped semiconducting material 102 and a first p-doped semiconducting material 103 through contact areas 104, 105. The first doped semiconducting materials 102, 103 are connected to a second n-doped semiconducting material 106 and a second p-doped semiconducting material 107. The first semiconducting materials 102 and 103 and the respective second semiconducting materials 106, 107 are fully in contact in this case. The second semiconducting materials 106, 107 are connected with a first contact area 110 and a second contact area 111 through a lower bridge element 108. The contact areas 110, 111 are again used for connecting the individual thermoelectric generator elements 100, or to tap a voltage. The lower bridge elements 108 and 109 are connected through an adhesive layer 112, 113 and the second doped semiconducting materials 106, 107 are connected through an adhesive layer 114, 115 with a substrate 116, while the upper bridge element 101 is connected with the substrate 116 through an adhesive layer 117.

[0077] FIG. 8 shows a multiple arrangement of thermal elements, which are set up together to form a cooling array 120 in a schematic overview. A first thermal element 121 is connected with a second thermal element 123 is connected through a bridge element 122. The assembly of each individual thermal element 121, 123 corresponds to the assembly of the thermal element according to FIG. 4. A voltage supply can occur through a first contact area 124 and a second contact area 125. Both contact areas 124, 125 are connected with two further thermal elements 128, 129 through a dielectric compound layer 126, 127, so that a quadruple arrangement of thermal elements is available. The two upper thermal elements 121, 123 are switched in series in this case, as are the two lower thermal elements 128, 129. The upper thermal elements 121, 123 are also switched in parallel with the lower thermal elements 128, 129 through the electrical compound layer 126, 127, so that any thermal elements 121, 123, 128, 129 are activatable. The advantage of this arrangement is that the lower arrangement of thermal elements 128, 129 are switched on only with a corresponding cooling, so that a lower starting current develops due to the delayed connection.

[0078] All four thermal elements 121, 123, 128, 129 are integrated in a substrate 130 and are each connected with the substrate 130 through adhesive layers.

[0079] The thermoelectric generator 100 is to be used for additional generation of voltage in this case, due to the waste heat produced by the integrated circuit. The waste heat produced results in a generation of voltage in the thermoelectric generator 100 due to the Seebeck effect, and can be used within the integrated circuit for the supply of thermal elements. Such a thermoelectric generator 100 can therefore preferably be used in the upper layers of the integrated circuit in order to use the resulting waste heat.

LIST OF REFERENCES

[0080] 1 thermoelectric component

[0081] 2 trigger unit

[0082] 3 trigger line

[0083] 4 transistor

[0084] 5 positive potential

[0085] 6 line

[0086] 7 protective diode

[0087] 8 protective diode

[0088] 9 zero potential

[0089] 10 integrated circuit

[0090] 15 cooling element

[0091] 16 active phase

[0092] 17 rest phase

[0093] 20 first contact area

[0094] 21 second contact area

[0095] 22 first contact area

[0096] 23 second contact area

[0097] 24 transistor

[0098] 25 transistor

[0099] 26 circuit element

[0100] 27 cooling section

[0101] 28 cooling section

[0102] 29 thermal element

[0103] 30 cooling section

[0104] 31 cooling section

[0105] 32 cooling section

[0106] 33 sensor

[0107] 50 contact area

[0108] 51 contact area

[0109] 52 substrate

[0110] 53 bridge element

[0111] 54 contact area

[0112] 55 contact area

[0113] 56 semiconducting material

[0114] 57 semiconducting material

[0115] 58 bridge element

[0116] 59 bridge element

[0117] 60 adhesive layer

[0118] 61 adhesive layer

[0119] 62 adhesive layer

[0120] 63 adhesive layer

[0121] 64 adhesive layer

[0122] 65 area

[0123] 66 area

[0124] 67 area

[0125] 68 area

[0126] 70 cooling array

[0127] 71 contact area

[0128] 72 contact area

[0129] 73 bridge element

[0130] 74 semiconducting material

[0131] 75 semiconducting material

[0132] 76 contact area

[0133] 77 contact area

[0134] 78 substrate

[0135] 79 contact area

[0136] 80 semiconducting material

[0137] 81 contact area

[0138] 82 semiconducting material

[0139] 83 bridge element

[0140] 84 bridge element

[0141] 85 adhesive layer

[0142] 86 adhesive layer

[0143] 87 adhesive layer

[0144] 88 adhesive layer

[0145] 89 adhesive layer

[0146] 90 adhesive layer

[0147] 91 adhesive layer

[0148] 92 bridge element

[0149] 93 semiconducting material

[0150] 94 semiconducting material

[0151] 95 adhesive layer

[0152] 96 adhesive layer

[0153] 97 adhesive layer

[0154] 98 thermal element

[0155] 100 thermoelectric generator

[0156] 101 bridge element

[0157] 102 semiconducting material

[0158] 103 semiconducting material

[0159] 104 contact area

[0160] 105 contact area

[0161] 106 semiconducting material

[0162] 107 semiconducting material

[0163] 108 bridge element

[0164] 109 bridge element

[0165] 110 contact area

[0166] 111 contact area

[0167] 112 adhesive layer

[0168] 113 adhesive layer

[0169] 114 adhesive layer

[0170] 115 adhesive layer

[0171] 116 substrate

[0172] 117 adhesive layer

[0173] 120 cooling section

[0174] 121 thermal element

[0175] 122 bridge element

[0176] 123 thermal element

[0177] 124 contact area

[0178] 125 contact area

[0179] 126 compound layer

[0180] 127 compound layer

[0181] 128 thermal element

[0182] 129 thermal element

[0183] 130 substrate

[0184] A distance

[0185] B distance