SOURCE WAFER AND METHOD OF PREPARATION THEREOF

Abstract

A source wafer for use in a micro-transfer printing process. The source wafer comprises: a substrate; a device coupon (110), including an optoelectronic device; and a breakable tether securing the device coupon to the substrate. The breakable tether includes one or more breaking regions which connect the breakable tether to the substrate.

Claims

1. A source wafer for use in a micro-transfer printing process, the source wafer comprising: a substrate; a device coupon, including an optoelectronic device; and a breakable tether securing the device coupon to the substrate, the breakable tether including one or more breaking regions which connect the breakable tether to the substrate.

2. The source wafer of claim 1, wherein the or each breaking region includes a neck of breakable tether material which extends across a cavity between the device coupon and a tether street which at least partially surrounds the device coupon.

3. The source wafer of claim 1, wherein the or each breaking region is thinner than adjacent portions of the breakable tether.

4. The source wafer of claim 1, wherein the or each breaking region is narrower than adjacent portions of the breakable tether.

5. The source wafer of claim 1, wherein the breakable tether includes a plurality of breaking regions which are disposed around a periphery of the device coupon.

6. The source wafer of claim 1, wherein the device coupon is secured to the substrate only by the breaking regions of the breakable tether.

7. The source wafer of claim 1, wherein further comprises a sacrificial layer between the device coupon and the substrate.

8. The source wafer of claim 1, wherein the optoelectronic device is formed of one or more III-V semiconductor materials.

9. The source wafer of claim 1, wherein the optoelectronic device comprises a plurality of layers.

10. The source wafer of claim 1, wherein the device coupon includes one or more protective outer layers.

11. The source wafer of claim 10, wherein the protective outer layers include: an outer silicon dioxide layer, an intermediate silicon nitride layer, and an inner silicon dioxide layer.

12. The source wafer of claim 1, wherein the breaking regions are weaker than adjacent regions of the breakable tether.

13. The source wafer of claim 1, wherein the optoelectronic device is an optoelectronic device selected from the group consisting of lasers, photodetectors, and electro-absorption modulators.

14. The source wafer of claim 1, wherein the device coupon is separated from the substrate by a cavity which extends entirely around the device coupon, wherein the cavity is bridged by the one or more breaking regions thereby securing the device coupon to the substrate.

15. A method of preparing a source wafer for a micro-transfer printing process, the source wafer comprising: a substrate; a device coupon, including an optoelectronic device; and a precursor tether, disposed over at least a portion of the device coupon and substrate, the method comprising: etching the precursor tether, to define a breakable tether including one or more breaking regions which connect the breakable tether to the substrate.

16. The method of claim 15, further comprising etching the substrate and/or device coupon so that the device coupon is secured to the substrate by the breaking regions of the breakable tether.

17. The method of claim 16, wherein further etching the substrate and/or device coupon includes etching away a sacrificial layer located between the device coupon and the substrate.

18. The method of claim 15, wherein etching the precursor tether includes an initial step of patterning the precursor tether to define the one or more breaking regions.

19. The method of claim 15, further comprising a step of performing a plasma ashing process, to remove a portion of the breakable tether.

20. The method of claim 15, further comprising a step of at least partially encapsulating the device coupon in a protective layer.

21. A method of fabricating an optoelectronic component via a micro-transfer printing process using the source wafer of claim 1, comprising the steps of: adhering the device coupon to a stamp; lifting the device coupon away from the substrate, thereby breaking the breakable tether at the or each breaking region; and printing the device coupon onto a platform wafer.

22. An optoelectronic component, fabricated using the method of claim 21.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Embodiments of the invention will now be described by way of example with reference to the accompanying drawings in which:

[0044] FIG. 1 shows a top-down and cross-sectional view of a source wafer according to an embodiment of the present invention;

[0045] FIGS. 2-10C show top-down and cross-sectional views of various steps of a method according to an embodiment of the present invention;

[0046] FIG. 11 shows an optional further step of the method;

[0047] FIGS. 12 and 13 show top-down and cross-sectional views of a micro-transfer printing process according to an embodiment of the present invention; and

[0048] FIG. 14 shows an optoelectronic component according to an embodiments of the present invention.

DETAILED DESCRIPTION AND FURTHER OPTIONAL FEATURES

[0049] Aspects and embodiments of the present invention will now be discussed with reference to the accompanying figures. Further aspects and embodiments will be apparent to those skilled in the art.

[0050] FIG. 1 shows a top-down (upper) and cross-sectional (lower) view of a source wafer according to an embodiment of the present invention. The source wafer includes a substrate, in this example an indium phosphide substrate, which is attached to a device coupon 110 via a breakable tether 120. The breakable tether includes a plurality of breaking regions. These breaking regions, or breaking points, are narrow regions of tether material 130 which extend across a cavity extending around a periphery of the device coupon 110 (as shown most clearly in the top-down view). The device coupon 110 is attached to the substrate solely via these breaking regions, as an air gap exists between the device coupon and the substrate.

[0051] The breaking regions extend from the device coupon 110 to a tether street located above the substrate. The tether street extends around the periphery of the source wafer, and is provided by: a photoresist layer 130, an outer silicon dioxide layer 132, a silicon nitride layer 134, an inner silicon dioxide layer 136, an n-doped indium phosphide layer 138, and a sacrificial layer 140. The photoresist 130 extends down a sidewall of this stack, as seen most clearly in the cross-sectional figure (a cross-section along the line B-B′ in the top-down view).

[0052] The device coupon in this example comprises, in order from the furthest from the substrate to the closest: protective layers, a silicon dioxide layer, a p-doped indium gallium arsenide (P—InGaAs), a p-doped indium phosphide (P—InP) layer, a multiple quantum well (MQVV) layer, and an n-doped indium phosphide (N—InP) layer. The protective layers include an outer silicon dioxide layer, an intermediate silicon nitride layer, and an inner silicon dioxide layer. The intermediate silicon nitride layer may function as an antireflective coating for light entering/exiting the optoelectronic component provided within the device coupon.

[0053] FIGS. 2-10C show top-down and cross-sectional views of various steps of a method according to an embodiment of the present invention. In a first step, shown in FIG. 2, a III-V semiconductor based device is provided. The following process steps may have already been completed: waveguide fabrication; waveguide isolation; dielectric shaping (e.g. benzocyclobutene resin); provision of P and N electrodes. A 500 nm thick silicon dioxide (SiO.sub.2) hard mask is then provided, patterned, and the facets etched. A 200 nm thick SiO.sub.2 layer is retained after the facet etch.

[0054] Next, as shown in FIG. 3, the protective layers are deposited which provide an antireflective coating. The protective layers comprise a 20 nm thick inner SiO.sub.2 layer; a 180 nm thick Si.sub.3N.sub.4 layer; and a 200 nm thick outer SiO.sub.2 layer. An optional additional 100 nm silicon nitride layer (not shown here) can be added as wet etch hard mask for the outer SiO.sub.2 layer. Photoresist is then spun coated onto the source wafer, and patterned to define the device coupon. The result of this is shown in FIGS. 4A-4C, which are cross-sections along the lines A-A′, B-B′, and C-C′ respectively. As can be seen from FIG. 4A, a gap of 15 μm to 50 μm may be formed in the photoresist thereby exposing the outer silicon dioxide layer. The distance between the outer silicon dioxide layer on the device coupon and the gap may be 2 μm to 5 μm. This distance is covered by photoresist, as shown.

[0055] In a step shown in FIGS. 5A-5C, a wet etch is performed to remove exposed silicon dioxide. An optional additional 100 nm hard ask silicon nitride layer (not shown here) can be dry etched before this wet etch, and this optional hard mask can be removed in the steps shown in FIGS. 7A-7C without any additional steps. The etch is intentionally over performed, so that the facet sidewalls of the SiO.sub.2 feet are removed as shown in the cross-sectional views most clearly. After this etch, the photoresist is removed as shown in FIGS. 6A-6C. An anisotropic dry etch is then performed, to remove exposed silicon nitride, silicon dioxide, and n-doped indium phosphide with high selectivity. The etch intentionally extends into the sacrificial layer by around 100 nm. The results of this are shown in FIGS. 7A-7C.

[0056] In a step shown in FIGS. 8A-8C, further photoresist is spun coated onto the source wafer and patterned for sacrificial layer etching. The sacrificial layer is then etched away, and around 100 nm of the underlying indium phosphide substrate is also etched away. The sacrificial layer is etched close to the facet with self-alignment with the ARC as a hard mask. It should be noted that, as shown in FIG. 8B, the sacrificial layer is etched in some places in the middle of the gap between the photoresist and so some sacrificial layer is left unetched (i.e. those portions protected by photoresist). Further, as shown in FIG. 8C, the sacrificial layer on the coupon sidewall is covered by photoresist and so is unetched in this step.

[0057] Next, in a step, shown in FIGS. 9A-9C, a photoresist adhesion promoter (for example hexamethyldisilazane, HMDS) is applied onto the source wafer. Subsequently, a 3-4 μm photoresist is further spun onto the source wafer and patterned. The street facet is protected by photoresist, as shown in the cross-sectional figures most clearly. This photoresist defines the breaking regions, or breaking points, of the source wafer. The breaking points, here necks of photoresist, span a distance of 2 μm to 5 μm wide. They may be 3 μm to 10 μm wide, and adjacent portions of the photoresist may be 10 μm to 20 μm wide. The breaking points are designed to be the weakest point, whilst being strong enough to overcome the capillary force in the sacrificial layer etching process and yet weak enough to be the preferential breaking point during the pick-up process.

[0058] The sacrificial layer is then etched away via a wet etched. The result of this is shown in FIGS. 10A-10C. The device coupon is now suspended by the breaking regions, and an air gap exists between the device coupon and the substrate. An air gap also exists between the neck regions and the substrate, as shown in FIG. 10B. The tether keeps the coupon suspended with good enough adhesion and strength.

[0059] FIG. 11 shows an optional further step of the method. If the tether neck is too strong to break appropriately during the pick-up process, an O.sub.2 plasma ash can be performed to etch away some of the photoresist tether. This can be achieved because the neck is suspended and therefore exposed to the O.sub.2 plasma in all three dimensions. This step further weakens the neck regions of the tether, and therefore makes it easier for them to break in the subsequent pick-up process.

[0060] FIGS. 12 and 13 show top-down and cross-sectional views of a micro-transfer printing process according to an embodiment of the present invention. A stamp is attached to the uppermost surface of the device coupon, in this example the photoresist. The stamp is then lifted away from the substrate causing the tether to break at the breaking regions. Due to the reduction in the breaking area as compared to the prior art, no or substantially fewer tether debris are generated. Further, due to their location any debris are unlikely to adhere to the bottom of the coupon which further improves print yield.

[0061] FIG. 14 shows an optoelectronic component according to an embodiments of the present invention. The device coupon is placed within the cavity of a platform wafer, and adhered to a bed thereof. The platform wafer is formed of a silicon substrate 141, buried oxide layer 142, and a silicon-on-insulator layer 143.

[0062] The features disclosed in the description, or in the following claims, or in the accompanying drawings, expressed in their specific forms or in terms of a means for performing the disclosed function, or a method or process for obtaining the disclosed results, as appropriate, may, separately, or in any combination of such features, be utilised for realising the invention in diverse forms thereof.

[0063] While the invention has been described in conjunction with the exemplary embodiments described above, many equivalent modifications and variations will be apparent to those skilled in the art when given this disclosure. Accordingly, the exemplary embodiments of the invention set forth above are considered to be illustrative and not limiting. Various changes to the described embodiments may be made without departing from the spirit and scope of the invention.

[0064] For the avoidance of any doubt, any theoretical explanations provided herein are provided for the purposes of improving the understanding of a reader. The inventors do not wish to be bound by any of these theoretical explanations.

[0065] Any section headings used herein are for organizational purposes only and are not to be construed as limiting the subject matter described.

[0066] Throughout this specification, including the claims which follow, unless the context requires otherwise, the word “comprise” and “include”, and variations such as “comprises”, “comprising”, and “including” will be understood to imply the inclusion of a stated integer or step or group of integers or steps but not the exclusion of any other integer or step or group of integers or steps.

[0067] It must be noted that, as used in the specification and the appended claims, the singular forms “a,” “an,” and “the” include plural referents unless the context clearly dictates otherwise. Ranges may be expressed herein as from “about” one particular value, and/or to “about” another particular value. When such a range is expressed, another embodiment includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by the use of the antecedent “about,” it will be understood that the particular value forms another embodiment. The term “about” in relation to a numerical value is optional and means for example +/−10%.