OSCILLATOR CIRCUIT WITH TEMPERATURE COMPENSATION FUNCTION

Abstract

Differing from conventional oscillator circuit does not include temperature compensation function, the present invention particularly constitutes a gain stage, a current mirror unit, a clamping current supplying unit, a noise inhibiting unit, a compensation unit, and a reference signal generating unit to a novel oscillator circuit having temperature compensation function. A variety of experimental data have proved that, based on the normal operation of the compensation unit and the reference signal generating unit, the oscillator frequency of the oscillator circuit of the present invention almost be kept at same level even if the ambient temperature continuously increases. Therefore, because the frequency drift due to temperature variation would not occur in the oscillator circuit of the present invention, the novel oscillator circuit is potential oscillator to replace the conventional oscillators applied in analog-to-digital convertors or time-to-digital convertors.

Claims

1. An oscillator circuit with temperature compensation function, comprising: a gain stage; a current mirror unit, being coupled to the gain stage for supplying at least one bias current to the gain stage; a clamping current supplying unit, being coupled to the current mirror unit and the gain stage for supplying a clamping current to the gain stage; a noise inhibiting unit, being coupled to the gain stage and the current mirror unit, and used for producing a first reference current to the current mirror unit according to an output signal of the gain stage; wherein the noise inhibiting unit stops the supplying of the first reference current while a voltage level of the output signal is greater than a specific threshold voltage; a compensation unit, being coupled to the current mirror unit; and a reference signal generating unit, producing a reference signal to the compensation unit according to a temperature parameter of the gain stage and an ambient temperature, such that the modulation of a specific oscillator frequency of the output signal of the gain stage is achieved after the compensation unit generates a second reference current to the current mirror unit for adjust the clamping current based on the reference signal.

2. The oscillator circuit with temperature compensation function of claim 1, further comprising an output buffer unit coupled to the output terminal of the gain stage.

3. The oscillator circuit with temperature compensation function of claim 1, wherein the gain stage is a voltage-controlled oscillator (VCO).

4. The oscillator circuit with temperature compensation function of claim 1, wherein the current mirror unit comprises: a first MOSFT, being coupled to a first supply voltage V.sub.DD by the source terminal thereof, and the gate terminal and the drain terminal of the first MOSFT being coupled to each other; a second MOSFET, being coupled to the first supply voltage by the source terminal thereof, and the gate terminal of the second MOSFT being coupled to the gate terminal of the first MOSFT; and a third MOSFET, being coupled to the first supply voltage by the source terminal thereof, and the gate terminal of the third MOSFT being coupled to the gate terminal of the first MOSFT.

5. The oscillator circuit with temperature compensation function of claim 4, wherein the clamping current supplying unit comprises a fourth MOSFET, and the source terminal, the gate terminal and the drain terminal of the fourth MOSFET being coupled to the first supply voltage, the gate terminal of the first MOSFET, and the gain stage, individually.

6. The oscillator circuit with temperature compensation function of claim 5, wherein the noise inhibiting unit comprises: a fifth MOSFT, being coupled to the drain terminal of the second MOSFET by the source terminal thereof, and the drain terminal and the gate terminal of the fifth MOSFT being individually coupled to a second supply voltage and the output terminal of the gain stage; and a sixth MOSFT, being coupled to the drain terminal of the third MOSFET by the source terminal thereof, and the drain terminal and the gate terminal of the sixth MOSFT being individually coupled to the second supply voltage and the output terminal of the gain stage.

7. The oscillator circuit with temperature compensation function of claim 6, wherein the compensation unit comprises: a seventh MOSFT, being coupled to the second supply voltage by the source terminal thereof, and the drain terminal and the gate drain terminal of the seventh MOSFT being individually coupled to the reference signal generating unit and the drain terminal of the first MOSFT; and a source resistor, being coupled between the source terminal of the seventh MOSFT and the second supply voltage.

8. The oscillator circuit with temperature compensation function of claim 7, wherein each of the first MOSFET, the second MOSFET, the fourth MOSFET, the fifth MOSFET, and the sixth MOSFET are a P-type MOSFET, and the seventh MOSFET being a N-type MOSFET.

9. The oscillator circuit with temperature compensation function of claim 7, further comprising an output signal trimming unit coupled to the clamping current supplying unit and the gain stage, comprising: a plurality of trimming MOSFETs, wherein each one of the trimming MOSFETs is coupled to the gate terminal of the fourth MOSFET by the gate terminal thereof; moreover, the source terminal and drain terminal of the trimming MOSFET being individually coupled to the first supply voltage and the gain stage; and a plurality of enabling switches, wherein each one of the enabling switches is coupled between the gain stage and the drain terminal of the trimming MOSFET.

10. The oscillator circuit with temperature compensation function of claim 9, wherein each of the trimming MOSFETs are a P-type MOSFET.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The invention as well as a preferred mode of use and advantages thereof will be best understood by referring to the following detailed description of an illustrative embodiment in conjunction with the accompanying drawings, wherein:

[0016] FIG. 1 shows a block diagram of a conventional analog signal processing circuit;

[0017] FIG. 2 shows a block diagram of an oscillator circuit with temperature compensation function according to the present invention;

[0018] FIG. 3 shows a circuit architecture diagram of the oscillator circuit with temperature compensation function;

[0019] FIG. 4 shows a circuit architecture diagram of a conventional oscillator circuit without temperature compensation function;

[0020] FIG. 5 shows a data curve graph of temperature versus frequency.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] To more clearly describe an oscillator circuit with temperature compensation function according to the present invention, embodiments of the present invention will be described in detail with reference to the attached drawings hereinafter.

[0022] Please refer to FIG. 2, there is illustrated a block diagram of an oscillator circuit with temperature compensation function according to the present invention. As FIG. 2 shows, the oscillator circuit 1 of the present invention mainly comprises: a gain stage 11, a current mirror unit 12, a clamping current supplying unit 13, a noise inhibiting unit 14, a compensation unit 15, a reference signal generating unit 16, an output buffer unit 17, and an output signal trimming unit 18, wherein the gain stage 11 is a voltage-controlled oscillator (VCO).

[0023] Continuously referring to FIG. 2, and please simultaneously refer to FIG. 3, where a circuit architecture diagram of the oscillator circuit with temperature compensation function is provided. As FIG. 2 and FIG. 3 show, the current mirror unit 12, consisting of a first MOSFT Q1, a second MOSFET Q2, and a third MOSFET Q3, is coupled to the gain stage 11 for supplying at least one bias current to the gain stage 11. It is worth explaining that, P-type MOSFET is particularly used as the first MOSFT Q1, the second MOSFET Q2, and the third MOSFET Q3 in the circuit arrangement of the present invention. On the other hand, the first MOSFT Q1 is coupled to a first supply voltage V.sub.DD by the source terminal thereof, and the gate terminal and the drain terminal of the first MOSFT Q1 is coupled to each other. Moreover, the second MOSFET Q2 is also coupled to the first supply voltage V.sub.DD by the source terminal thereof, and the gate terminal of the second MOSFT Q2 is coupled to the gate terminal of the first MOSFT Q1. In addition, the third MOSFET Q3 is coupled to the first supply voltage V.sub.DD by the source terminal thereof, and the gate terminal of the third MOSFT Q3 is coupled to the gate terminal of the first MOSFT Q1.

[0024] In the circuit arrangement of the oscillator circuit 1 of the present invention, the clamping current supplying unit 13 is coupled to the current mirror unit 12 and the gain stage 11 for supplying a clamping current to the gain stage 11. As FIG. 2 and FIG. 3 show, the clamping current supplying unit 13 comprises a fourth MOSFET Q4, and the source terminal, the gate terminal and the drain terminal of the fourth MOSFET Q4 are coupled to the first supply voltage V.sub.DD, the gate terminal of the first MOSFET Q1, and the gain stage 11, individually. Herein, it needs to further explain that, it is easy for electronic engineers to calculate the oscillator frequency of the gain stage 11 by using mathematical formula of f.sub.osc I/(VC) because the gain stage 11 is a voltage-controlled oscillator (VCO). In the mathematical formula, V and C means a phase switching voltage and an effective capacitor of the gain stage 11, respectively. Moreover, I represents a charging current of the effective capacitor, wherein the said charging current is the clamping current I.sub.clamp used for clamping the oscillator frequency. Briefly speaking, the primary technology feature of the present invention is to lower the frequency drift due to temperature variation occurring in the VCO (i.e., gain stage 11) by modulating the clamping current I.sub.clamp.

[0025] Furthermore, the noise inhibiting unit 14 is coupled to the gain stage 11 and the current mirror unit 12. As FIG. 2 and FIG. 3 show, the noise inhibiting unit 14 comprises a fifth MOSFT Q5 and a sixth MOSFT Q6, wherein the fifth MOSFT Q5 is coupled to the drain terminal of the second MOSFET Q2 by the source terminal thereof; moreover, the drain terminal and the gate terminal of the fifth MOSFT Q5 are individually coupled to a second supply voltage V.sub.SS and the output terminal of the gain stage. On the other hand, the sixth MOSFT Q6 is coupled to the drain terminal of the third MOSFET Q3 by the source terminal thereof, and the drain terminal and the gate terminal of the sixth MOSFT Q6 are individually coupled to the second supply voltage V.sub.SS and the output terminal of the gain stage 11. In the circuit arrangement of the present invention, the noise inhibiting unit 14 is configured to produce a first reference current to the current mirror unit 12 according to an output signal of the gain stage 11. Moreover, the noise inhibiting unit 14 would stop the supplying of the first reference current while a voltage level of the output signal is greater than a specific threshold voltage.

[0026] Particularly, the compensation unit 15 comprising a seventh MOSFT Q7 and a source resistor R1 is coupled to the current mirror unit 12. As FIG. 2 and FIG. 3 show, the seventh MOSFT Q7 is coupled to the second supply voltage V.sub.SS by the source terminal thereof, and the drain terminal and the gate drain terminal of the seventh MOSFT Q7 are individually coupled to the reference signal generating unit 16 and the drain terminal of the first MOSFT Q1. Moreover, the source resistor R1 is coupled between the source terminal of the seventh MOSFT Q7 and the second supply voltage V.sub.SS. By such circuit arrangement for the oscillator circuit 1, the reference signal generating unit 16 is able to produce a reference signal to the compensation unit 15 according to a temperature parameter of the gain stage 11 and an ambient temperature of the, such that the modulation of the oscillator frequency of the output signal is achieved after the compensation unit 15 generates a second reference current to the current mirror unit 12 for adjust the clamping current I.sub.clamp based on the reference signal.

[0027] It is worth explaining that, each of the first MOSFET Q1, the second MOSFET Q1, the fourth MOSFET Q4, the fifth MOSFET Q5, and the sixth MOSFET Q6 are a P-type MOSFET, and the seventh MOSFET Q7 is a N-type MOSFET. In addition, the oscillator circuit 1 with temperature compensation function further comprises an output buffer unit 17 coupled to the output terminal of the gain stage 11.

[0028] On the other hand, for the VCO is usually applied in analog-to-digital convertors or time-to-digital convertors, the gain stage 11 in the oscillator circuit 1 must be a frequency tunable VCO. As the engineers skilled in development of VOC circuits know, the oscillator frequency of the output signal (V.sub.out) of the VCO can be calculated by using following mathematical formula: .sub.out=.sub.0+K.sub.VCO*V.sub.out. In the mathematical formula K.sub.VCO represents sensitivity or gain of circuit, and .sub.0 means an intercross point of V.sub.out=0. Therefore, it is able to know that .sub.0 and V.sub.out are factors for modulating the oscillator frequency of the gain stage 11 (i.e., the VCO). For purpose of frequency tuning, the present invention particularly makes an output signal trimming unit 18 be coupled to the clamping current supplying unit 13 and the gain stage 11. As FIG. 3 shows, the output signal trimming unit 18 comprises a plurality of trimming MOSFETs (Q.sub.TN, Q.sub.TN-1, . . . , Q.sub.T0) and a plurality of enabling switches (SW.sub.N,SW.sub.N-1, . . . , SW.sub.0). In circuit arrangement of the output signal trimming unit 18, P-type MOSFET is used as the trimming MOSFET.

[0029] Moreover, each one of the trimming MOSFETs (SW.sub.N,SW.sub.N-1, . . . , SW.sub.0) is coupled to the gate terminal of the fourth MOSFET Q4 by the gate terminal thereof, and the source terminal and drain terminal of the trimming MOSFET are individually coupled to the first supply voltage V.sub.DD and the gain stage 11. On the other hand, each one of the enabling switches (SW.sub.N,SW.sub.N,1, . . . , SW.sub.0) is coupled between the gain stage 11 and the drain terminal of the trimming MOSFET. By such circuit arrangement, it is able to utilize an external micro control unit (MCU) to enable and/or disable the trimming MOSFETs (SW.sub.N,SW.sub.N-1, . . . , SW.sub.0) by switching the enabling switches (SW.sub.N,SW.sub.N-1, . . . , SW.sub.0) to short circuit and/or open circuit, so as to achieve the trimming of the output signal (V.sub.out) of the gain stage 11.

[0030] Thus, above descriptions have completely and clearly introduced the circuit architecture and operation of the oscillator circuit 1 with temperature compensation function according to the present invention. In following paragraphs, the practicability of the novel oscillator circuit 1 will be subsequently presented through a variety of experimental data.

[0031] Please refer to FIG. 4, where a circuit architecture diagram of a conventional oscillator circuit without temperature compensation function is provided. After comparing FIG. 4 with FIG. 3, it is found that the conventional oscillator circuit 100 merely includes a constant current source 2 instead of the compensation unit 15 and the reference signal generating unit 16 shown in FIG. 3. Please continuously refer to FIG. 5, which provides a data curve graph of temperature versus frequency. From FIG. 5, it can find that the oscillator frequency of the conventional oscillator circuit 100 goes up with the increasing of ambient temperature. On the contrary, based on the normal operation of the compensation unit 15 and the reference signal generating unit 16, the oscillator frequency of the oscillator circuit 1 of the present invention almost be kept at same level even if the ambient temperature continuously increases. Thus, experimental data of FIG. 5 have proved that the oscillator circuit 1 of the present invention indeed has a temperature compensation function.

[0032] It is worth explaining that, the noise inhibiting unit 14 utilizes the fifth MOSFT Q5 and the sixth MOSFT Q6 to provide a positive current adjustment for the gain stage 11. Moreover, based on the mathematical formula of f.sub.osc I/(VC), the compensation unit 15 consisting of the seventh MOSFT Q7 and the source resistor R1 are used for applying a negative current adjustment to the gain stage 11.

[0033] As the electronic engineers know, drain current of a MOSFET can be calculated by using the mathematical formula of I.sub.D=k(V.sub.GSV.sub.th.sup.2). In the mathematical formula, V.sub.GS means a difference voltage between the gate terminal and the source terminal of the MOSFET, and k represents a gain factor. It is worth explaining that, V.sub.th, a threshold voltage of the MOSFET, is inversely proportional to ambient temperature or device operation temperature. Thus, by utilizing the mathematical formula of I.sub.D=k(V.sub.GSV.sub.th.sup.2), it is able to control the reference signal generating unit 16 produce a reference signal to the seventh MOSFT Q7 of the compensation unit 15 according to a temperature parameter of the gain stage 11 and an ambient temperature. Subsequently, as long as the resistance of the source resistor R1 and the level of the reference signal are properly controlled, it is very easy to achieve the aforesaid negative current adjustment by facilitating the seventh MOSFET Q7 output a second reference current to the current mirror unit 12.

[0034] Therefore, through above descriptions, the oscillator circuit 1 with temperature compensation function provided by the present invention has been introduced completely and clearly; in summary, the present invention includes the advantages of:

[0035] (1) Differing from conventional oscillator circuit does not include temperature compensation function, the present invention particularly constitutes a gain stage 11, a current mirror unit 12, a clamping current supplying unit 13, a noise inhibiting unit 14, a compensation unit 15, and a reference signal generating unit 16 to a novel oscillator circuit having temperature compensation function. A variety of experimental data have proved that, based on the normal operation of the compensation unit 15 and the reference signal generating unit 16, the oscillator frequency of the oscillator circuit 1 of the present invention almost be kept at same level even if the ambient temperature continuously increases. Therefore, because the frequency drift due to temperature variation would not occur in the oscillator circuit 1 of the present invention, the novel oscillator circuit 1 is potential oscillator to replace the conventional oscillators applied in analog-to-digital convertors or time-to-digital convertors.

[0036] The above description is made on embodiments of the present invention. However, the embodiments are not intended to limit scope of the present invention, and all equivalent implementations or alterations within the spirit of the present invention still fall within the scope of the present invention.