MICROPHONE CIRCUITS FOR CANCELING OUT THE LEAKAGE CHARACTERISTICS OF A TRANSDUCER
20180109869 ยท 2018-04-19
Inventors
- Ion Opris (San Jose, CA)
- Abu Hena M Kamal (Santa Clara, CA)
- Ramesh Prakash (Fremont, CA)
- Lee Tay Chew (Cupertino, CA)
Cpc classification
B81B2201/0257
PERFORMING OPERATIONS; TRANSPORTING
B81B7/008
PERFORMING OPERATIONS; TRANSPORTING
H04R3/002
ELECTRICITY
B81B3/0035
PERFORMING OPERATIONS; TRANSPORTING
International classification
H04R1/10
ELECTRICITY
G10K11/16
PHYSICS
H04R1/34
ELECTRICITY
Abstract
A circuit for biasing a transducer including a first plate and a second plate includes a front-end buffer and a charge pump. The front-end buffer generates an internal signal at an internal node in response to a voltage signal of the second plate. The transducer receives the incident sound wave at the first plate to generate the voltage signal at the second plate. The charge pump boosts the internal signal into a boost voltage at the first plate according to a first clock signal.
Claims
1. A circuit for biasing a transducer, wherein the transducer comprises a first plate and a second plate, comprising: a front-end buffer, generating an internal signal at an internal node in response to a voltage signal of the second plate, wherein the transducer receives the incident sound wave at the first plate to generate the voltage signal at the second plate; and a charge pump, boosting the internal signal into a boost voltage at the first plate according to a first clock signal.
2. The circuit of claim 1, wherein the front-end buffer comprises: a bias current source, sourcing a current to the internal node; and a P-type transistor, comprising a gate terminal coupled to the second plate, a source terminal coupled to the internal node, and a drain coupled to a ground.
3. The circuit of claim 1, wherein the charge pump comprises: a first unidirectionally conducting device, unidirectionally providing the internal signal to the first pump node; a first capacitor, coupled between the first pump node and the first clock signal; an output unidirectionally conducting device, unidirectionally providing a voltage of the first pump node to the first plate; and an output capacitor, coupled between the first plate and the ground.
4. The circuit of claim 3, wherein the first clock signal comprises a high logic level and a low logic level, wherein the boost voltage is boosted to a level that is across the first unidirectionally conducting device and the output unidirectionally conducting device.
5. The circuit of claim 3, wherein each of the first unidirectionally conducting device and the output unidirectionally conducting device is a diode.
6. The circuit of claim 3, wherein each of the first unidirectionally conducting device and the output unidirectionally conducting device is a diode-connected transistor.
7. The circuit of claim 3, wherein the charge pump further comprises: a second unidirectionally conducting device, coupled between the first pump node and the output unidirectionally conducting device and unidirectionally coupling the first pump node to a second pump node, wherein the output unidirectionally conducting device is coupled between the second pump node and the first plate; and a second capacitor, coupled between the second pump node and a second clock signal, wherein the second clock signal is an inverse of the first clock signal.
8. The circuit of claim 7, wherein the second unidirectionally conducting device is a diode.
9. The circuit of claim 7, wherein second unidirectionally conducting device is a diode-connected transistor.
10. The circuit of claim 3, wherein the transducer comprises: a leakage current source, comprising a leakage current flowing from the first plate to the second plate, wherein the leakage current is time-variant and is a constant after a period from a startup; a variable capacitor, coupled between the first plate and the second plate and comprising a capacitance, wherein the capacitance is varied in response to the incident sound wave; a fixed capacitor, coupled between the first plate and the second plate; and a bias resistor, coupled between the second plate and a ground.
11. The circuit of claim 10, further comprising: a switch, coupled between the second plate and the ground and controlled by a power-on-reset signal, wherein when the circuit is powered ON and the switch pulls a voltage of the second plate to the ground, the leakage current and the bias resistor generates a leakage voltage at the second plate, wherein the charge pump boosts the leakage voltage into the boost voltage at the first plate, such that a voltage across the transducer is not related to the leakage voltage.
12. The circuit of claim 10, further comprising: a low-noise amplifier, amplifying the internal signal to generate an audio signal; and an analog-to-digital converter, converting the audio signal into a digital signal.
13. A microphone circuit, comprising: a transducer, comprising a first plate and a second plate, wherein the transducer receives an incident sound wave at the first plate to generate a voltage signal at the second plate; a front-end buffer, generating an internal signal at an internal node in response to the voltage signal; and a charge pump, boosting the internal signal into a boost voltage at the first plate according to a first clock signal.
14. The microphone circuit of claim 13, wherein the front-end buffer comprises: a bias current source, sourcing a current to the internal node; and a P-type transistor, comprising a gate terminal coupled to the second plate, a source terminal coupled to the internal node, and a drain coupled to a ground.
15. The microphone circuit of claim 13, wherein the charge pump comprises: a first unidirectionally conducting device, unidirectionally providing the internal signal to the first pump node; a first capacitor, coupled between the first pump node and the first clock signal; an output unidirectionally conducting device, unidirectionally providing a voltage of the first pump node to the first plate; and an output capacitor, coupled between the first plate and the ground.
16. The microphone circuit of claim 15, wherein the first clock signal comprises a high logic level and a low logic level, wherein the boost voltage is boosted to a level that is equal to the sum of the internal signal and the high logic level minus the drop voltages across the first unidirectionally conducting device and the output unidirectionally conducting device.
17. The microphone circuit of claim 15, wherein each of the first unidirectionally conducting device and the output unidirectionally conducting device is a diode.
18. The microphone circuit of claim 15, wherein each of the first unidirectionally conducting device and the output unidirectionally conducting device is a diode-connected transistor.
19. The microphone circuit of claim 15, wherein the charge pump further comprises: a second unidirectionally conducting device, coupled between the first pump node and the output unidirectionally conducting device and unidirectionally coupling the first pump node to a second pump node, wherein the output unidirectionally conducting device is coupled between the second pump node and the first plate; and a second capacitor, coupled between the second pump node and a second clock signal, wherein the second clock signal is an inverse of the first clock signal.
20. The microphone circuit of claim 19, wherein the second unidirectionally conducting device is a diode.
21. The microphone circuit of claim 19, wherein the second unidirectionally conducting device is a diode-connected transistor.
22. The microphone circuit of claim 15, wherein the transducer comprises: a leakage current source, comprising a leakage current flowing from the first plate to the second plate, wherein the leakage current is time-variant and is a constant after a period from startup; a variable capacitor, coupled between the first plate and the second plate and comprising a capacitance, wherein the capacitance is varied in response to the incident sound wave; a fixed capacitor, coupled between the first plate and the second plate; and a bias resistor, coupled between the second plate to a ground.
23. The microphone circuit of claim 22, further comprising: a switch, coupled between the second plate and the ground and controlled by a power-on-reset signal, wherein when the circuit is powered ON and the switch pulls a voltage of the second plate to the ground, the leakage current and the bias resistor generates a leakage voltage at the second plate, wherein the charge pump boosts the leakage voltage into the boost voltage at the first plate, such that a voltage across the transducer is not related to the leakage voltage.
24. The microphone circuit of claim 22, further comprising: a low-noise amplifier, amplifying the internal signal to generate an audio signal; and an analog-to-digital converter, converting the audio signal into a digital signal.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0030] The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
[0031]
[0032]
[0033]
[0034]
DETAILED DESCRIPTION OF THE INVENTION
[0035] This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. The scope of the invention is best determined by reference to the appended claims.
[0036] It should be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the application. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Moreover, the formation of a feature on, connected to, and/or coupled to another feature in the present disclosure that follows may include embodiments in which the features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the features, such that the features may not be in direct contact.
[0037]
[0038] The front-end buffer 120 generates an internal signal SI at an internal node NI, in response to the voltage signal SC. The charge pump 130 boosts the internal signal SI into a boost voltage VB, according to a first clock signal 1. According to an embodiment of the invention, when the voltage signal SC indicates the leakage characteristics of the transducer 110, the boost voltage VB also includes the leakage characteristics of the transducer 110.
[0039] Since the leakage characteristics appear at both plates of the transducer 110, the leakage characteristics may be canceled out in the voltage across the transducer 110. How to cancel the leakage characteristics will be precisely described in the following paragraphs.
[0040]
[0041] The transducer 210, which is modeled as a MEMS capacitor CMEMS, includes a first plate P1 and a second plate P2. The transducer 210 receives the incident sound wave INS at the first plate P1 to generate the voltage signal SC at the second plate P2. In response to incident sound wave INS received at the first plate P1, the flexible membrane of the transducer 210 is deformed slightly from its equilibrium position.
[0042] The change of the distance between the first plate P1 and the second plate P2 causes a change in the MEMS capacitor CMEMS. Thus, when the capacitance of the MEMS capacitor CMEMS is changed, the voltage change V, which defines the sensitivity of the transducer 210, can be represented by equation 1, in which C indicates the capacitance change of the transducer 210.
V=(VBSC)*(C/CMEMS)Eq. 1
[0043] The front-end buffer 220 includes a bias current source 221 and a P-type transistor 222. The bias current source 221 supplies a current I to the internal node NI. The gate terminal of the P-type transistor 222 is coupled to the second plate P2 to receive the voltage signal SC, the source terminal of the P-type transistor 222 sinks the current I, and the drain terminal of the P-type transistor 222 is coupled to the ground. According to an embodiment of the invention, the P-type transistor 222 acts as a source follower such that there is only a difference of a source-to-gate voltage of the P-type transistor 222 between the internal signal SI and the voltage signal SC. In other words, the internal signal SI is a sum of the source-to-gate voltage of the P-type transistor 222 and the voltage signal SC.
[0044] The charge pump 230 includes a first unidirectionally conducting device UC1, a first capacitor C1, an output unidirectionally conducting device UCO, and an output capacitor C. The first unidirectionally conducting device UC1 unidirectionally provides the internal signal SI to the first pump node NP1. The switch 240 is configured to reset the voltage signal SC at the second plate P2.
[0045] The first capacitor C1 is coupled between the first pump node NP1 and the first clock signal 1. The output unidirectionally conducting device UCO unidirectionally provides a voltage of the first pump node NP1 to the first plate P1. The output capacitor C is coupled between the first plate P1 and the ground.
[0046] According to an embodiment of the invention, the first clock signal 1 includes a high logic level and a low logic level equal to the ground, in which the boost voltage VB is boosted to a level that is equal to the sum of the internal signal SI and the high logic level minus the drop voltages of the first unidirectionally conducting device UC1 and the output unidirectionally conducting device UCO.
[0047] Since the voltage of the first plate P1 is biased by the boost voltage VB, which is equal to the sum of the internal signal SI and the high logic level minus the drop voltages across the unidirectionally conducting devices, and the voltage of the second plate P2 is at the voltage signal SC, the voltage signal SC can be canceled out in the voltage across the transducer 210.
[0048] According to an embodiment of the invention, each of the first unidirectionally conducting device UC1 and the output unidirectionally conducting device UCO is a diode. According to another embodiment of the invention, each of the first unidirectionally conducting device UC1 and the output unidirectionally conducting device UCO is a transistor connected as a diode, in which the transistor can be an N-type transistor or a P-type transistor.
[0049]
[0050] The first unidirectionally conducting device UC1 unidirectionally provides the internal signal SI to the first pump node NP1. The first capacitor C1 is coupled between the first pump node NP1 and the first clock signal 1.
[0051] The second unidirectionally conducting device UC2 unidirectionally provides the voltage of the first pump node NP1 to the second pump node NP2. The second capacitor C2 is coupled between the second pump node NP2 and the second clock signal 2, in which the second clock signal 2 is an inverse of the first clock signal 1.
[0052] The output unidirectionally conducting device UCO unidirectionally provides a voltage of the first pump node NP1 to the first plate P1. The output capacitor C is coupled between the first plate P1 and the ground.
[0053] According to an embodiment of the invention, the first clock signal 1 includes a high logic level and a low logic level equal to the ground, and the second clock signal 2 includes a high logic level and a low logic level equal to the ground. The boost voltage VB is thus boosted to a level that is equal to the sum of the internal signal SI and 2-fold of the high logic level minus the drop voltages of the first unidirectionally conducting device UC1, the second unidirectionally conducting device UC2, and the output unidirectionally conducting device UCO.
[0054] Since the voltage of the first plate P1 is biased by the boost voltage VB, which is equal to the sum of the internal signal SI and 2-fold of the high logic level minus the drop voltages of the first unidirectionally conducting device UC1, the second unidirectionally conducting device UC2, and the output unidirectionally conducting device UCO, and the voltage of the second plate P2 is biased by the voltage signal SC, the voltage across the transducer 210 is independent of the voltage signal SC.
[0055] According to an embodiment of the invention, each of the first unidirectionally conducting device UC1, the second unidirectionally conducting device UC2, and the output unidirectionally conducting device UCO is a diode. According to another embodiment of the invention, each of the first unidirectionally conducting device UC1, the second unidirectionally conducting device UC2, and the output unidirectionally conducting device UCO is a transistor connected as a diode, in which the transistor can be an N-type transistor or a P-type transistor.
[0056] According to an embodiment of the invention, the first clock signal 1 and the second clock signal 2 may have different high logic levels. One unidirectionally conducting device (i.e., the first unidirectionally conducting device UC1 or the second unidirectionally conducting device UC2) and one capacitor (i.e., the first capacitor C1 or the second capacitor C2) are considered as a stage.
[0057] According to other embodiments of the invention, any number of stages could be cascaded before the output unidirectionally conducting device UCO to achieve a higher boost voltage VB. For example, when another stage (not shown in
[0058]
[0059] The transducer 410 is modeled by a leakage current source 411, a bias resistor RB, a fixed capacitor C0, and a variable capacitor CVAR. The leakage current 411 indicates a leakage current I(t), which is time dependent, caused by the leakage characteristics of the transducer 410, which eventually becomes a constant after a period from startup. According to an embodiment of the invention, the leakage current I(t) is eventually vanished. In addition, the leakage current I(t) and the bias resistor RB generate a leakage voltage VL at the second plate P2.
[0060] The fixed capacitor C0 is coupled between the first plate P1 and the second plate P2. The variable capacitor CVAR is also coupled between the first plate P1 and the second plate P2, and varied in response to the incident sound wave INS.
[0061] According to an embodiment of the invention, a sum of the fixed capacitor C0 and the variable capacitor CVAR is equal to the CMEMS in
[0062] The front-end buffer 420 includes a bias current source 421 and a P-type transistor 422, in which the bias current source 421 supplies a bias current I to bias the P-type transistor 422. According to an embodiment of the invention, the front-end buffer 420 levels up the voltage signal SC to generate the internal signal SI.
[0063] The charge pump 430 boosts the internal signal SI into the boost voltage VB to bias the first plate P1. According to an embodiment of the invention, the charge pump 430 is implemented by the charge pump 230 in
[0064] According to an embodiment of the invention, the switch 440 is implemented by an N-type transistor MN which is controlled by a power-on-reset signal POR. The low-noise amplifier 450 amplifies the internal signal SI to generate an audio signal AOUT. The analog-to-digital converter 460 converts the analog signal AOUT into a digital signal DOUT.
[0065] According to an embodiment of the invention, when the microphone circuit 400 is starting up, the switch 440 is turned ON by the power-on-reset signal POR to discharge the second plate P2 to the ground, in which the power-on-reset signal POR is a pulse. During a period from startup, the time-variant leakage current I(t) and the bias resistor RB generate the leakage voltage VL at the second plate P2. According to another embodiment of the invention, when the incident sound wave is received during startup so that the voltage signal SI is thus generated, the voltage of the second plate P2 is equal to a sum of the voltage signal SI and the leakage voltage VL.
[0066] The front-end buffer 420 brings the leakage voltage VL to the internal signal SI, such that the internal signal SI is equal to a sum of the source-to-gate voltage of the P-type transistor 422 and the leakage voltage VL. The charge pump 430 then boosts the internal voltage SI into the boost voltage VB.
[0067] The charge pump 430 is illustrated with the charge pump 300 in
[0068] Since the first plate P1 is biased by the voltage of the sum of 2-fold high logic level and the internal signal SI, regardless the drop voltages of the unidirectionally conducting devices in the charge pump 430, and the second plate P2 is biased by the leakage voltage VL, the voltage across the transducer 410 is equal to a sum of 2-fold high logic level and the source-to-gate voltage of the P-type transistor 422 which is independent from the leakage voltage VL.
[0069] Since the time-variant leakage characteristics have been canceled from the voltage across the transducer 410, the microphone circuit 400 is suitable for any transducer having different leakage characteristics. In addition, the settle time of the microphone circuit 400 after startup should be shorter since the time-variant leakage characteristics are canceled out.
[0070] While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. Those who are skilled in this technology can still make various alterations and modifications without departing from the scope and spirit of this invention. Therefore, the scope of the present invention shall be defined and protected by the following claims and their equivalents.