Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same

Abstract

A solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same provides improved efficiency when converting sunlight to power. The photovoltaic (PV) solar cell includes an intrinsic superlattice material deposited between the p-doped layer and the n-doped layer. The superlattice material is comprised of a plurality of sublayers which effectively create a graded band gap and multi-band gap for the superlattice material. The sublayers can include a nanocrystalline Si:H layer, an amorphous SiGe:H layer and an amorphous SiC:H layer. Varying the thickness of each layer results in an effective energy gap that is graded as desired for improved efficiency. Methods of constructing single junction and parallel configured two junction solar cells include depositing the various layers on a substrate such as stainless steel or glass.

Claims

1. A method of fabricating a photovoltaic (PV) device having 180 degree symmetry, comprising: (a) depositing a first transparent conductive oxide (TCO) layer on a first side of a substrate; (b) rotating the substrate by 180 degrees; (c) depositing a second TCO layer on the second side of the substrate; (d) depositing a first PIN structure on the second TCO layer; (e) rotating the substrate by 180 degrees; (f) depositing a second PIN structure on the first TCO layer; (g) depositing a third TCO layer on the second PIN structure; (h) rotating the substrate by 180 degrees; and (i) depositing a fourth TCO layer on the first PIN structure.

2. The method of claim 1, wherein the substrate is transparent.

3. The method of claim 1, wherein the substrate comprises glass.

4. The method of claim 1, further comprising: (j) depositing a back reflector on the fourth TCO layer; (k) rotating the substrate by 180 degrees; and (l) depositing an anti-reflective coating on the third TCO layer.

5. The method of claim 1, wherein (d) depositing a first PIN structure on the second TCO layer further comprises: (d1) depositing a bottom n layer; (d2) depositing an amorphous Si:H buffer layer; (d3) depositing a first nanocrystalline Si:H layer; (d4) depositing an amorphous SiGe:H layer; (d5) repeating (d3) and (d4) between 20-50 times; (d6) depositing a second nanocrystalline Si:H layer; (d7) depositing an amorphous SiC:H layer; (d8) repeating (d6) and (d7) between 20-50 times; and (d9) depositing a top p+ layer.

6. The method of claim 1, wherein the first PIN structure is identical to the second PIN structure.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The invention description below refers to the accompanying drawings, of which:

(2) FIG. 1A, already described, is a schematic cross-sectional view of a solar cell device according to a prior art embodiment having a conventional single junction nc-Si:H intrinsic layer;

(3) FIG. 1B, already described, is a schematic cross-sectional view of a solar cell device according to a prior art embodiment having a conventional single junction a-Si:H intrinsic layer;

(4) FIG. 2 is a schematic cross-sectional view of a solar cell device according to an illustrative embodiment incorporating a nanocrystalline supperlattice material having a combination of sublayers;

(5) FIG. 3 is a diagram of the energy band versus position for the thin film solar cell device according to illustrative embodiments;

(6) FIG. 4 is a diagram of the combination of sublayers of the nanocrystalline superlattice, according to the illustrative embodiments;

(7) FIG. 5 is a flow chart of a procedure for manufacturing a solar cell in accordance with illustrative embodiments;

(8) FIG. 6 is a schematic cross-sectional view of a two junction parallel configuration solar cell in accordance with the illustrative embodiments; and

(9) FIG. 7 is a flow chart of a procedure for fabricating the two junction parallel configuration solar cell in accordance with the illustrative embodiments.

DETAILED DESCRIPTION

(10) Improved efficiency of solar cells is achieved by employing a nanocrystalline superlattice material having a combination of sublayers. According to illustrative embodiments, the superlattice material has an effective energy gap that is graded from the collective combination of sublayers. The term nanocrystalline as used herein refers to the size of crystals or crystalline region being in the scale of nanometers. In an illustrative embodiment, in the nanocrystalline silicon layer, the silicon crystals are in the range of size from approximately 5 to 15 nm embedded in an amorphous silicon matrix.

(11) Reference is made to FIG. 2, showing a schematic cross-sectional view of a solar cell device 200, incorporating a nanocrystalline superlattice material 210, according to an illustrative embodiment. The solar cell structure is illustratively fabricated on a stainless steel substrate 230, however other substrates readily apparent to those skilled in the art can be readily employed. As shown in FIG. 2, the solar cell 200 includes a top anti-reflection layer 202 which is deposited on an ITO layer 204 which has a thickness of approximately 70 nm. The ITO layer 204 is deposited on a p+ or p-doped layer 206 which is deposited on the nanocrystalline superlattice material 210. The structure and method of construction for the superlattice material layer 210 is described in greater detail with reference to FIGS. 3 to 5 hereinbelow.

(12) As shown in FIG. 2, the nanocrystalline material 210 includes a first sublayer L1 (213) that is intertwined with a second sublayer L2 (212) and a third sublayer L3 (211) is also intertwined with the second sublayer L2 (212). The first sublayer L1 (213) is comprised of amorphous SiGe film (a-SiGe:H) having a band gap of approximately 0.8 eV. The a-SiGe:H layer L1 results in quantum confinement induced mini bands in the conduction band of SiGe. Therefore, photons of energy of approximately 0.8 eV and above are absorbed which leads to creation of electron-hole pairs (for example see electron-hole pair 314 of FIG. 3). These charges are separated by the electrostatic force induced by n+ and p+ electrodes in the films yielding photocurrent. The lower band gap materials of L1 yield higher current density. The second sublayer L2 (212) is comprised of a hydrogenated nanocrystalline layer of Si:H (nc-Si:H) and has a higher mobility and a band gap of approximately 1.1 eV. The photons of approximately 1.1 eV and above are absorbed which leads to creation of electron-hole pairs (for example see electron-hole pair 312 of FIG. 3). These charges are separated by the electrostatic force induced by the fabricated n+ and p+ electrodes yielding photocurrent. The higher mobility materials of layer L2 yield higher fill factor. The third sublayer L3 (211) is comprised of amorphous SiC (a-SiC:H) and has a band gap above 2 eV. This film also has quantum confinement which induces intermediate bands within the forbidden gap of SiC. Thus, photons of energy of approximately 2 eV, above and slightly below are absorbed and lead to creation of electron-hole pairs (for example see electron-hole pair 316 of FIG. 3). These charge carriers are separated by the electrostatic force induced by the n+ and p+ electrodes yielding photocurrent. The wider band gap material of layer L3 yields higher voltage.

(13) Reference is now made to FIGS. 3 and 4, showing the superlattice material and its sublayers in greater detail. FIG. 3 is a diagram of the energy band versus position for the solar cell device, and FIG. 4 details the combination of sublayers of the superlattice material. As shown in FIG. 3, the solar cell 300 includes a p+ layer 310, which is similar to the p+ layer 206 and a n layer 330, which is similar to the n layer 222 of FIG. 2. The superlattice absorber material 320 is disposed between the p+ layer 310 and the n layer 330 of the solar cell 300. As described herein, the superlattice is comprised of a multi-layered material which includes a first sublayer of nc-Si:H which is layered with a-SiGe:H to create quantum wells, and a-SiC:H to create quantum barriers. Note the quantum well 322 generated by the a-SiGe:H sublayer and the quantum barrier 324 generated by the a-SiC:H sublayer. The electrons 340, 341, 342 and 343 each have corresponding holes 350, 351, 352 and 353 which generate electron-hole pairs for efficiently producing energy in accordance with the solar cell described herein. Quantum confinement effect creates intermediate bands 360 and mini bands 370. The electron 341 at the mini band utilize thermal energy or low energy photons to raise to the conduction band of nc-Si:H layer. The barrier layers 324 are thin enough and the electron 342 easily tunnel through it. The p+ 310 and n+ 330 layers create electrostatic driving force that drive the electron and holes to n+ and p+ layer respectively.

(14) FIG. 4 is a diagram of the combination of sublayers of the nanocrystalline superlattice. The second sublayer L2 is the nc-Si:H layer which is deposited throughout the nanocrystalline superlattice as described herein. This is a mid-gap semiconductor material consisting mostly of nanocrystalline silicon that has high mobility and high current density. It transports charges to electrodes effectively, yielding enhancement in fill factor. The first sublayer L1 is the a-SiGe:H layer which is a low band gap semiconductor material also known as a quantum well layer, which enhances charge carrier population. The third sublayer L3 is the a-SiC:H layer which is a wide gap semiconductor material also known as a quantum barrier layer. This sublayer L3 increases the operating voltage of the cell.

(15) A flow chart of a procedure 500 for fabricating or otherwise manufacturing a solar cell having an amorphous and nanocrystalline superlattice structure is illustrated in FIG. 5. According to the procedure 500 for manufacturing the solar cell, a substrate is provided first at step 502, and then at step 504 a back reflector layer is fabricated. Then at step 506 a bottom n layer is formed, an then an amorphous Si:H buffer layer is fabricated at step 508. The buffer layer eliminates mixing of n type dopant in the nc-Si:H layer during formation. Then a nanocrystalline Si:H layer is fabricated at step 510 and amorphous SiGe:H layer is fabricated at step 512 which creates quantum well layer. The step 510 and 512 repeated for approximately 20 to 50 times that creates first set of superlattice. The lower bandgap quantum well layer yields higher short circuit current.

(16) In the next stage of fabrication an nanocrystalline Si:H layer is fabricated at step 514 and next an amorphous SiC:H layer is fabricated fabricated at step 516, which creates quantum barrier. The steps 514 and 516 are repeated approximately 20 to 50 times that creates the second set of superlattice. The wider band gap barrier layer yields higher voltage.

(17) Finally at step 518 a p+ layer is deposited. The light from the sun is absorbed in the superlattice layer described herein. The quantum well and barrier induced mini and intermediate bands generates extra electron-hole pairs. Internal electrostatic force drive electrons to n+ layer and holes to p+ layer.

(18) In order to create an optimized solar cell device structure, there are several parameters to be considered in fabricating the device. In the superlattice layer, three different absorption coefficient layers are periodically stacked. The number of nanocrystalline layers are based on optical transmittance and absorption analysis, which results in approximately 40 nc-Si layers in the superlattice absorber. The nanocrystalline layer consists of nm sized crystals embedded in the amorphous matrix. In the nanocrystalline layer, amorphous and crystalline volume ratio of approximately 50% is optimal. A layer of ITO will serve as the top layer of the solar cell embodiment.

(19) Transport of charge carrier without loss is significant for realizing high efficiency device. An optimized a-SiC:H quantum barrier layer will yield a higher and uniform internal electric field and hence increases drift lengths (L.sub.drift=E) of charge carriers. For effective collection of charge carriers, thickness of intrinsic layer should be comparable to the drift length (t.sub.L-layer>L.sub.drift). The thickness of the intrinsic layer can be reduced to achieve optimal carrier collection. In single junction cell, reduction of intrinsic layer thickness leads higher light transmission without generating electron-hole pairs. Reference is made to FIG. 6 showing a schematic cross-sectional view of a two junction parallel configuration cell that reduces the thickness of the intrinsic layer to achieve optimal carrier generation and collection. Unutilized light by the top cell can be effectively harvested by the bottom cell. This two junction parallel configured tandem cell can be fabricated in a fraction of cost required for fabricating the conventional tandem cell. Our novel cell design has 180 degrees rotational symmetry. Each film deposition as shown in the procedure 700 of FIG. 7 is continued on each side of the substrate by rotating the low cost glass substrate. In this approach, two sub-cells are fabricated in a single load. The manufacturing expense will be thus be much less expensive than requiring two sub-cells to be fabricated individually.

(20) With reference to FIGS. 6 and 7, a two junction parallel configuration tandem cell 600 is fabricated by first providing a substrate 602 at step 701. The substrate can be glass or any other appropriate transparent substrate in accordance with the illustrative embodiments. Next, at step 702, a TCO layer 604 is deposited on a first side (Sub-Cell I) of the substrate. The substrate is then rotated 180 degrees at step 703 and then a layer of TCO 606 is deposited on the second side (Sub-Cell II) of the substrate at step 704. The P-I-N layers are then deposited at step 705, with a P-I-N structure 608 deposited on the TCO layer 606. The structure is then rotated 180 degrees at step 706 and a P-I-N structure 610 is deposited on the TCO layer 604 at step 707. The P-I-N structures 608 and 610 are the superlattice structure as described herein, shown in detail as layer 606 in FIG. 6.

(21) At step 708 of the procedure, a TCO layer 612 top contact is deposited and the substrate is then rotated 180 degrees at step 709. Then at step 710 a TCO layer 614 is deposited and at step 711 the metal contacts and back reflector 616. The structure is again rotated 180 degrees at step 713 and the top AR coating 618 is deposited at step 714.

(22) Various illustrative embodiments and methods of constructions have now been described, and the structure and construction will be apparent to those having ordinary skill. The solar cell includes a superlattice material and can be any combination of sublayers to achieve solar cell efficiency as described herein. The applications and implementations should be readily apparent to those skilled in the art.

(23) The foregoing has been a detailed description of illustrative embodiments of the invention. Various modifications and additions can be made without departing from the spirit and scope of this invention. Each of the various embodiments described above may be combined with other described embodiments in order to provide multiple features. Furthermore, while the foregoing describes a number of separate embodiments of the apparatus and method of the present invention, what has been described herein is merely illustrative of the application of the principles of the present invention. For example, the illustrative embodiments can include additional layers to perform further functions or enhance existing, described functions. Likewise, while not shown, the electrical connectivity of the cell structure with other cells in an array and/or an external conduit is expressly contemplated and highly variable within ordinary skill. More generally, while some ranges of layer thickness and illustrative materials are described herein. It is expressly contemplated that additional layers, layers having differing thicknesses and/or material choices can be provided to achieve the functional advantages described herein. In addition, directional and locational terms such as top, bottom, center, front, back, above, and below should be taken as relative conventions only, and not as absolute. Furthermore, it is expressly contemplated that various semiconductor and thin films fabrication techniques can be employed to form the structures described herein. Accordingly, this description is meant to be taken only by way of example, and not to otherwise limit the scope of this invention.