Detection method and detection apparatus for polishing pad of chemical mechanical polishing device

Abstract

Disclosed are a detection method and a detection apparatus for a polishing pad of a chemical mechanical polishing device, particularly a detection method and a detection apparatus for detecting a surface of a polishing pad dynamically. An isolation region isolated by a gas to expose the polishing pad is formed by the detecting device, and a detection is performed on the isolation region, such that the chemical mechanical polishing device is capable of detecting the polishing pad without interrupting a manufacturing process and the detection results with more accurate can be achieved. Thereby, the polishing pad can be repaired and replaced more timely.

Claims

1. A detection method for a polishing pad of a chemical mechanical polishing device, and particularly a method for detecting a surface of a polishing pad dynamically, wherein the chemical mechanical polishing device has a polishing pad disposed on a base and a polishing liquid layer covering the surface of the polishing pad, and the detection method comprises following steps: rotating the base to drive the polishing pad to pivot; injecting a gas from above the polishing liquid layer toward the surface of the polishing pad, so that an isolation region isolated by the gas to expose the polishing pad is formed on the polishing liquid layer; and detecting a surface area on the polishing pad being exposed by the isolation region, wherein the chemical mechanical polishing device comprises a detecting device for detecting the surface area on the polishing pad being exposed by the isolation region, and the detecting device has an isolator comprising: a first gas nozzle for injecting a first portion of the gas toward a central portion of the surface area on the polishing pad being exposed by the isolation region; and a second gas nozzle for injecting a second portion of the gas toward an outer portion of the surface area on the polishing pad being exposed by the isolation region to form a gas wall for blocking a portion of the polishing liquid layer that is isolated by the first portion of the gas flowing back to the central portion of the surface area.

2. The detection method for the polishing pad of the chemical mechanical polishing device according to claim 1, wherein the isolation region formed by the gas on the polishing liquid layer is horizontally moved toward an inner side or an outer side of the polishing pad, and during the move of the isolation region, the surface area on the polishing pad being exposed by the isolation region is continuously detected.

3. A detection apparatus for a polishing pad of a chemical mechanical polishing device, comprising at least: a chemical mechanical polishing device comprising a polishing pad, a polishing liquid layer, and a base, wherein the polishing pad is positioned and covered on the base, and the polishing liquid layer covers a surface of the polishing pad; and a detecting device comprising an isolator for generating an isolation region on the polishing liquid layer by injecting a gas to expose the polishing pad and a detector for detecting a surface area on the polishing pad being exposed by the isolation region, wherein the isolator comprises: a first gas nozzle for injecting a first portion of the gas toward a central portion of the surface area on the polishing pad being exposed by the isolation region; and a second gas nozzle for injecting a second portion of the gas toward an outer portion of the surface area on the polishing pad being exposed by the isolation region to form a gas wall for blocking a portion of the polishing liquid layer that is isolated by the first portion of the gas flowing back to the central portion of the surface area.

4. The detection apparatus for the polishing pad of the chemical mechanical polishing device according to claim 3, wherein the first portion of the gas injected by the first gas nozzle exposes a portion of the polishing pad being detected by the detector.

5. The detection apparatus for the polishing pad of the chemical mechanical polishing device according to claim 3, wherein the detecting device is further provided with a shifter, the shifter has a driving unit and a swing arm connected to the driving unit, the detector and the isolator are connected to the swing arm, and the swing arm drives the detector and the isolator to move horizontally above the polishing pad toward an inner side or an outer side of the polishing pad.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram of an appearance of the invention.

(2) FIG. 2 is a schematic diagram of an action of a detection apparatus of the invention.

(3) FIG. 3 is a schematic diagram of the detection apparatus of the invention during detection.

(4) FIG. 4 is a schematic diagram of an action of the detection apparatus according to another embodiment of the invention.

(5) FIG. 5 is a schematic diagram of the detection apparatus during detecting according to still another embodiment of the invention.

(6) FIG. 6 is a schematic diagram of the detection apparatus during detecting according to yet another embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

(7) Referring to FIG. 1 to FIG. 3, it can be clearly seen from the figures that the invention has a chemical mechanical polishing device 1 and a detecting device 2.

(8) The chemical mechanical polishing device 1 has a polishing pad 11, a polishing liquid layer 12, and a base 13. The polishing pad 11 is positioned to cover the base 13, and the polishing liquid layer 12 covers a surface of the polishing pad 11.

(9) The detecting device 2 has a detector 21, an isolator 22, and a shifter 23. The shifter 23 has a driving unit 231 and a swing arm 232 connected to the driving unit 231. The detector 21 and the isolator 22 are connected to the swing arm 232. In the present embodiment, the detector 21 and the isolator 22 are connected to the swing arm 232 side by side.

(10) Based on the foregoing, when the surface of the polishing pad 11 is detected, a gas nozzle 221 of the isolator 22 injects a gas into a detecting position of the detector 21. Airflow is used to allow a polishing liquid layer 12 to generate an isolation region 121 to expose the polishing pad 11, so that the detector 21 may detect a position exposed by the isolation region 121. In addition, the base 13 is configured to drive the polishing pad 11 to rotate, and the swing arm 232 is configured to drive the detector 21 and the isolator 22 to move horizontally above the polishing pad 11 toward an inner side or an outer side of the polishing pad 11, so that the detector 21 may detect the polishing pad 11 comprehensively without interrupting a manufacturing process of the chemical mechanical polishing device 1.

(11) Referring to FIG. 4 and FIG. 5, it can be clearly seen from the figures that a detector 21 and an isolator 22 of a detecting device 2 of the invention are connected to a swing arm 232 through an inner layer and an outer layer. Similarly, when the detecting device 2 detects a surface of a polishing pad 11, an air nozzle 221 of the isolator 22 uses airflow to allow a polishing liquid layer 12 to generate an isolation region 121, the base 13 is configured to drive the polishing pad 11 to rotate, and the swing arm 232 is configured to drive the detector 21 and the isolator 22 to move horizontally above the polishing pad 11 toward an inner side or an outer side of the polishing pad 11, so that the detector 21 may detect the polishing pad 11 comprehensively.

(12) Referring to FIG. 6, it can be clearly seen from the figures that isolators 22′ of a detecting device 2′ of the invention is disposed in pair, and each of the isolators 22′ has a first gas nozzle 221′ and a second gas nozzle 222′ for injecting a gas. The first gas nozzle 221′ injects the gas toward a center of a detecting position of the detector 21′, and the second gas nozzle 222′ injects the gas toward an outer edge of the detecting position of the detector 21′. Therefore, the first air nozzle 221′ pushes liquid of the polishing liquid layer 12 from the center of the detecting position toward an outer edge, and the second air nozzle 222′ is configured to form an air wall at the outer edge of the detecting position to block liquid of the polishing liquid layer 12 from flowing toward the center of the detecting position. Therefore, not only a larger isolation region 121 is generated by the detector 21′ in the polishing liquid layer 12 at the detecting position of the polishing pad 11, but also a liquid residue of the polishing liquid layer 12 in the isolation region 121 may be further reduced and detecting accuracy may be further improved.