AlGaN unipolar carrier solar-blind ultraviolet detector and manufacturing method thereof

Abstract

Provided is an AlGaN unipolar carrier solar-blind ultraviolet detector that is based on the AlGaN polarization effect and that uses the double heterojunction of the p-AlzGa1-zN/i-AlyGa1-yN/n-AlxGa1-xN (0.45=<x,z<y) as the main structure of the detector. It makes full use of the polarization built-in electric field pointing from n-type AlGaN to p-type AlGaN to enhance the electric field strength of the i-type absorption region and enhance the efficiency of carrier absorption and separation. At the same time, the valence band step of the p-AlzGa1-zN/i-AlyGa1-yN heterojunction is used to effectively restrict holes from entering the absorption region to recombine with electrons, thereby increasing the carrier lifetime. Furthermore, during device manufacturing the structure is such designed that makes it difficult for photo-generated holes to participate in the photoconductivity so as to realize unipolar conduction of electrons, thereby obtaining a high response speed and high gain current.

Claims

1. A method for manufacturing an AlGaN unipolar carrier solar-blind ultraviolet detector, comprising: providing a substrate for growing a nitride material; growing an AlN template on the substrate; growing n-Al.sub.xGa.sub.1-xN on the AlN template, where x>=0.45; growing i-Al.sub.yGa.sub.1-yN on the n-Al.sub.xGa.sub.1-xN, where y>x; growing p-Al.sub.zGa.sub.1-z on the i-Al.sub.yGa.sub.1-yN, where 0.45<=z<y; growing p-GaN on the p-Al.sub.zGa.sub.1-zN; etching a photosensitive mesa of the AlGaN unipolar carrier solar-blind ultraviolet detector on a wafer formed after the above operations are completed; etching a ring-shaped channel in the photosensitive mesa that reaches the i-Al.sub.yGa.sub.1-yN layer; etching the p-GaN layer surrounded by the ring-shaped channel on the photosensitive mesa with the ring-shaped channel, reaching the p-Al.sub.zGa.sub.1-zN layer; plating an n-electrode around the etched photosensitive mesa and performing rapid thermal annealing; and plating a p-electrode on the p-GaN layer outside the ring-shaped channel of the photosensitive mesa around which the n-electrode is plated, and performing rapid thermal annealing.

2. The method of claim 1, wherein in the operation of providing the substrate for growing the nitride material, the substrate is selected from sapphire or AlN.

3. The method of claim 1, wherein in the operation of growing n-Al.sub.xGa.sub.1-xN on the AlN template where x>=0.45, the n-Al.sub.xGa.sub.1-xN has a thickness of 300 nm, an Al mole-composition of 0.45, and a doping concentration greater than 5e18 cm.sup.−3.

4. The method of claim 1, wherein in the operation of growing i-Al.sub.yGa.sub.1-yN on the Al.sub.xGa.sub.1-xN where y>x, the i-Al.sub.yGa.sub.1-yN has a thickness of 200 to 300 nm and an Al mole-composition is 0.6, with unintentional doping.

5. The method of claim 1, wherein in the operation of growing p-Al.sub.zGa.sub.1-zN on the i-Al.sub.yGa.sub.1-yN, the p-Al.sub.zGa.sub.1-zN has a thickness of 10 to 50 nm, an Al mole-composition of 0.45, and a doping concentration greater than 2e18 cm.sup.−3.

6. The method of claim 1, wherein in the operation of growing p-GaN on the p-Al.sub.zGa.sub.1-zN, the p-GaN has a thickness of 50 to 150 nm and a doping concentration greater than 5e18 cm.sup.−3.

7. The method of claim 1, wherein in the operation of plating the n-electrode around the etched photosensitive mesa and performing rapid thermal annealing, the n-electrode is selected from Ti, Al, Ni, or Au.

8. The method of claim 1, wherein in the operation of plating the p-electrode on the p-GaN layer outside the ring-shaped channel of the photosensitive mesa around which the n-electrode is plated and performing rapid thermal annealing, the p-electrode is selected from Ni or Au.

9. The method of claim 1, wherein the AlN template is grown on the substrate by a growing method comprising metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride bapor phase epitaxy (HYPE).

10. The method of claim 1, wherein the AlN template is grown on the substrate at a growth temperature of 1300° C.

11. The method of claim 1, wherein the operation of growing n-Al.sub.xGa.sub.1-xN on the AlN template comprises growing an epitaxial layer of n-Al.sub.xGa.sub.1-xN on the AlN template by an epitaxial method MOCVD or MBE.

12. The method of claim 1, wherein the operation of growing i-Al.sub.yGa.sub.1-yN on the n-Al.sub.xGa.sub.1-xN comprises growing an epitaxial layer of i-Al.sub.yGa.sub.1-yN on the n-Al.sub.xGa.sub.1-xN epitaxial layer by a growing method MOCVD or MBE.

13. The method of claim 1, wherein the operation of growing p-Al.sub.zGa.sub.1-zN on the i-Al.sub.yGa.sub.1-yN comprises growing an epitaxial layer of p-Al.sub.zGa.sub.1-zN on the i-Al.sub.yGa.sub.1-yN epitaxial layer by a growing method MOCVD or MBE.

14. The method of claim 1, wherein the operation of growing p-GaN on the p-Al.sub.zGa.sub.1-zN comprises growing an epitaxial layer of p-GaN on the p-Al.sub.zGa.sub.1-zN epitaxial layer by a growing method MOCVD or MBE.

15. The method of claim 1, wherein the operation of etching the photosensitive mesa of the detector on the wafer comprises etching the photosensitive mesa of the detector on the wafer using inductively coupled plasma (ICP) etching technology, with a mesa etching gas of Cl.sub.2 and BCl.sub.3, and an etched depth that reaches n-Al.sub.xGa.sub.1-xN layer, wherein the etched depth is determined by an etching duration.

16. The method of claim 1, wherein the operation of etching the ring-shaped channel in the photosensitive mesa that reaches the i-Al.sub.yGa.sub.1-yN layer comprises etching the ring-shaped channel in the photosensitive mesa using inductively coupled plasma (ICP) etching technique, with an etching gas of Cl.sub.2 and BCl.sub.3, and an etched depth reaches the i-Al.sub.yGa.sub.1-yN.

17. The method of claim 1, wherein the operation of etching the p-GaN layer surrounded by the ring-shaped channel on the photosensitive mesa with the ring-shaped channel comprises etching the p-GaN layer surrounded by the ring-shaped channel in the photosensitive mesa with the ring-shaped channel using inductively coupled plasma (ICP) etching technique, with an etching gas of Cl.sub.2 and BCl.sub.3, and an etched depth that reaches the p-Al.sub.zGa.sub.1-zN.

18. The method of claim 1, wherein the operation of plating the n-electrode around the etched photosensitive mesa and performing rapid thermal annealing comprises creating an electrode forming area on the n-Al.sub.xGa.sub.1-xN layer by photolithography, and depositing an n-Al.sub.xGa.sub.1-xN ohmic contact electrode metal by means of vacuum evaporation or magnetron sputtering.

19. The method of claim 1, wherein the operation of plating the p-electrode on the p-GaN layer outside the ring-shaped channel of the photosensitive mesa around which the n-electrode is plated and performing rapid thermal annealing comprises creating an electrode forming area on the p-GaN epitaxial layer outside the ring-shaped isolation channel by photolithography, and depositing a p-GaN ohmic contact electrode metal by means of vacuum evaporation or magnetron sputtering.

20. An AlGaN unipolar carrier solar-blind ultraviolet detector that is manufactured using the method of claim 1.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) For a clearer understanding of the technical solutions that are used in the embodiments according to the present disclosure or that are used in the related art, hereinafter the drawings that are required for the description of the embodiments disclosed herein or the related art will be briefly introduced. Apparently, the drawings in the following description merely represent some embodiments of the present disclosure, and for those having ordinary skill in the art, other drawings may also be obtained based on these drawings without investing creative efforts.

(2) FIG. 1 is a flowchart illustrating the operations of manufacturing an AlGaN unipolar carrier solar-blind ultraviolet detector according to an embodiment of the present disclosure.

(3) FIG. 2 is a schematic diagram of an AlGaN unipolar carrier solar-blind ultraviolet detector according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

(4) Hereinafter, technical solutions in the embodiments according to the present disclosure will be described in a definite and comprehensive manner in connection with the accompanying drawings in the embodiments according to the present disclosure. Apparently, the embodiments described herein are only a part, rather than all of the embodiments in accordance with the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those having ordinary skill in the art without investing creative efforts shall all fall in the scope of protection of the present disclosure.

(5) FIG. 1 is a flowchart illustrating the operations of a method of manufacturing an AlGaN unipolar carrier solar-blind ultraviolet detector according to an embodiment of the present disclosure. The method may include the following operations.

(6) S110: providing a substrate for growing a nitride material;

(7) In some embodiments, the substrate for growing the nitride material is selected from sapphire or AlN.

(8) S120: growing an AlN template on the substrate;

(9) In particular, the AlN template is grown on the substrate by a growing method such as metal organic chemical vapor deposition (MOCVD), Molecular Beam Epitaxy (MBE), or Hydride Vapor Phase Epitaxy (HVPE), and the typical growth temperature is 1300° C.

(10) S130: growing n-Al.sub.xGa.sub.1-xN on the AlN template, where x>=0.45;

(11) In particular, an epitaxial layer of n-Al.sub.xGa.sub.1-xN may be grown on the AlN template by an epitaxial method such as MOCVD or MBE.

(12) In some typical embodiments, the n-Al.sub.xGa.sub.1-xN may have a thickness of 300 nm, a composition of 0.45, and a doping concentration>5e18 cm.sup.−3.

(13) S140: growing i-Al.sub.yGa.sub.1-yN on the n-Al.sub.xGa.sub.1-xN, where y>x;

(14) In particular, an epitaxial layer of i-Al.sub.yGa.sub.1-yN may be grown on the n-Al.sub.xGa.sub.1-xN epitaxial layer by a growing method such as MOCVD or MBE.

(15) In some typical embodiments, the i-Al.sub.yGa.sub.1-yN may have a thickness of 200˜300 nm, a composition of 0.6, with unintentional doping.

(16) S150: growing p-Al.sub.zGa.sub.1-zN on the i-Al.sub.yGa.sub.1-yN, where 0.45<=z<y;

(17) In particular, an epitaxial layer of p-Al.sub.zGa.sub.1-zN may be grown on the i-Al.sub.yGa.sub.1-yN epitaxial layer by a growing method such as MOCVD or MBE.

(18) In some typical embodiments, the p-Al.sub.zGa.sub.1-zN may have a thickness of 10˜50 nm, a composition of 0.45, and a doping concentration>2e18 cm.sup.−3.

(19) S160: growing p-GaN on the p-Al.sub.zGa.sub.1-zN;

(20) In particular, an epitaxial layer of p-GaN may be grown on the p-Al.sub.zGa.sub.1-zN epitaxial layer by a growing method such as MOCVD or MBE.

(21) In some typical embodiments, the p-GaN may have a thickness of 50˜150 nm and a doping concentration>5e18 cm.sup.−3.

(22) S170: etching a photosensitive mesa of the detector on a wafer formed after the above operations are completed;

(23) In particular, the photosensitive mesa of the detector may be etched on a wafer formed after the above operations are completed using inductively coupled plasma (ICP) etching technique, where the mesa etching gas may be Cl.sub.2 and BCl.sub.3, and the etched depth may reach n-Al.sub.xGa.sub.1-xN layer, where the etched depth is determined by the etching duration.

(24) S180: etching a ring-shaped channel in the photosensitive mesa that reaches the i-Al.sub.yGa.sub.1-yN layer;

(25) In particular, the inductively coupled plasma (ICP) etching technique may be used to etch the ring-shaped channel in the photosensitive mesa. The etching gas for the ring-shaped isolation channel may be Cl.sub.2 and BCl.sub.3, and the etched depth may reach the i-Al.sub.yGa.sub.1-yN.

(26) S190: etching the p-GaN layer surrounded by the ring-shaped channel on the photosensitive mesa with the ring-shaped channel, reaching the p-Al.sub.zGa.sub.1-zN layer.

(27) In particular, the inductively coupled plasma (ICP) etching technique may be used to etch the p-GaN layer surrounded by the ring-shaped channel in the photosensitive mesa with the ring-shaped channel, where the etching gas may be Cl.sub.2 and BCl.sub.3, and the etched depth may reach the p-Al.sub.zGa.sub.1-zN.

(28) S210: plating an n-electrode around the etched photosensitive mesa and performing rapid thermal annealing; and

(29) In particular, the electrode forming area may be created on the n-Al.sub.xGa.sub.1-xN layer by photolithography, and the n-Al.sub.xGa.sub.1-xN ohmic contact electrode metal may be deposited by means such as vacuum evaporation or magnetron sputtering.

(30) In some typical embodiments, the n-electrode is selected from Ti/Al/Ni/Au.

(31) S220: plating a p-electrode on the p-GaN layer outside the ring-shaped channel of the photosensitive mesa around which the n-electrode is plated, and performing rapid thermal annealing.

(32) In particular, the electrode forming area may be created on the p-GaN epitaxial layer outside the ring-shaped isolation channel by photolithography, and the p-GaN ohmic contact electrode metal may be deposited by means such as vacuum evaporation or magnetron sputtering.

(33) In some typical embodiments, the p-electrode is selected from Ni/Au.

(34) Referring now to FIG. 2, which is a schematic diagram illustrating the structure of an AlGaN unipolar carrier solar-blind ultraviolet detector manufactured by the above-described method according to the present disclosure, the detector including a sapphire substrate 1, an AlN epitaxial layer 2, an n-Al.sub.xGa.sub.1-xN 3, an i-Al.sub.yGa.sub.1-yN 4, a p-Al.sub.zGa.sub.1-zN 5, a p-GaN 6, an n-type ohmic electrode 7, and a p-type ohmic electrode 8.

(35) The method of manufacturing the AlGaN unipolar carrier solar-blind ultraviolet detector provided by the foregoing embodiment of the present disclosure has a simple process and is suitable for industrial production. The AlGaN unipolar carrier solar-blind ultraviolet detector such produced is based on the AlGaN polarization effect and uses the double heterojunction of the p-Al.sub.zGa.sub.1-zN/i-Al.sub.yGa.sub.1-yN/n-Al.sub.xGa.sub.1-xN (0.45=<x,z<y) as the main structure of the detector. It makes full use of the polarization built-in electric field pointing from n-type AlGaN to p-type AlGaN to enhance the electric field strength of the i-type absorption region and enhance the efficiency of carrier absorption and separation. At the same time, the valence band step of the p-Al.sub.zGa.sub.1-zN/i-Al.sub.yGa.sub.1-yN heterojunction is used to effectively restrict holes from entering the absorption region to recombine with electrons, thereby increasing the carrier lifetime. Furthermore, during device manufacturing the structure is such designed that makes it difficult for photo-generated holes to participate in the photoconductivity so as to realize unipolar conduction of electrons, thereby obtaining high response speed and high gain current.

(36) Of course, the AlGaN unipolar carrier solar-blind ultraviolet detector according to this disclosure may also have a variety of transformations and modifications, and will not be limited to the specific structures that are illustrated in the foregoing embodiments. In short, the scope of protection of the present disclosure should include those alterations, transformations and modifications that are obvious to those having ordinary skill in the art.