Solid vaporization/supply system of metal halide for thin film deposition

Abstract

Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

Claims

1. A solid vaporization/supply system of metal halide for thin film deposition comprising a vaporizable source material container for storing and vaporizing a metal halide for thin film deposition to be used as a vaporizable source material, and comprising a buffer tank coupled with the vaporizable source material container, the vaporizable source material container comprising: a container main body including a container wall which has a double-wall structure composed of an inner wall and an outer wall; a lid body detachably fixed to the container main body, and provided with a carrier gas inlet for introducing a carrier gas into the container main body and a mixed gas outlet for leading a mixed gas of the vaporized metal halide for thin film deposition with the carrier gas to the outside; a bolt and nut for fixing the container main body with the lid body; an internal inlet provided at a bottom surface portion of the inner wall constituting the container wall; a joint arranged at the carrier gas inlet and the mixed gas outlet of the lid body; and at least one plate-shaped shelf, being fabricated of a porous material, suspended from the container main body, wherein the carrier gas introduced from the carrier gas inlet passes through a space between the inner wall and outer wall of the double-wall structure, enters the container main body only through the internal inlet at the bottom surface portion of the inner wall, and gets in contact with the metal halide for thin film deposition placed on the at least one plate-shaped shelf, and then a mixed gas of the vaporized metal halide for thin film deposition and the carrier gas is led to the outside through the mixed gas outlet, wherein the at least one plate-shaped shelf has a shower head structure provided with a plurality of through holes formed therein, wherein the container wall of the container main body is fabricated of copper with 99 to 99.9999% purity, aluminum with 99 to 99.9999% purity, or titanium with 99 to 99.9999% purity, and wherein the container main body, the lid body, the bolt and nut, and the joint are each treated by fluorocarbon polymer coating and/or by electrolytic polishing on its surface.

2. The solid vaporization/supply system according to claim 1, further comprising a valve arranged at a portion of a gas flow path coupling the vaporizable source material container with the buffer tank, the valve being a vacuum valve having a CV value (in terms of water) of 0.2 or more.

3. The solid vaporization/supply system according to claim 1, further comprising one or more members having a spherical, spheroidal, leaf-like or spiral shape or another irregular shape, being made of aluminum or copper and having a maximum length of 1 to 30 mm in one direction in the container main body.

4. The solid vaporization/supply system according to claim 1, wherein the metal halide for thin film deposition to be used as the vaporizable source material is a compound represented by a general formula (1) described below:
MXn  General formula (1): in the general formula (1), M represents any element among Al, Hf, Zr, Ta, W, Ga, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb and Co; X represents a halogen atom; n is the number of X atoms.

5. The solid vaporization/supply system according to claim 1 to be used for thin film deposition by a chemical vapor deposition method.

6. The solid vaporization/supply system according to claim 1 to be used for thin film deposition by an atomic layer deposition method.

7. The solid vaporization/supply system according to claim 1 further comprising a carrier gas source that supplies a carrier gas to the container main body of the vaporizable source material container.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a block diagram showing an embodiment of a solid vaporization/supply system of metal halide for thin film deposition according to the present invention.

(2) FIG. 2 is a cross-sectional diagram schematically showing a vaporizable source material container used in the embodiment of a solid vaporization/supply system of metal halide for thin film deposition according to the present invention.

(3) FIG. 3 is a schematic cross-sectional diagram for illustrating gas flow of a carrier gas, a vaporizable source material having been vaporized and a mixed gas, in the vaporizable source material container shown in FIG. 2.

(4) FIG. 4 is a cross-sectional diagram schematically showing another example of a vaporizable source material container.

(5) FIG. 5 is a cross-sectional diagram schematically showing still another example of a vaporizable source material container.

(6) FIG. 6 is a top view schematically showing a shelf member depicted in FIG. 5

DESCRIPTION OF EMBODIMENTS

(7) Hereinafter, descriptions will be given of embodiments for implementing the present invention, but the present invention is not limited to the embodiments described below. That is, it should be recognized that any embodiment obtained by appropriately applying modification, refinement or the like to the embodiments described below, in a range not departing from the aim of the present invention and based on general knowledge of a person skilled in the art, is embraced within the scope of the present invention.

(8) [1] Solid Vaporization/Supply System of Metal Halide for Thin Film Deposition:

(9) An embodiment of a solid vaporization/supply system of metal halide for thin film deposition according to the present invention is shown in FIG. 1 as a solid vaporization/supply system 500. Hereafter, the solid vaporization/supply system of metal halide for thin film deposition of the present embodiment may be referred to as simply the “solid vaporization/supply system”. FIG. 1 is a block diagram showing a configuration of the embodiment of a solid vaporization/supply system of metal halide for thin film deposition according to the present invention.

(10) As shown in FIG. 1, the solid vaporization/supply system 500 of the present embodiment includes a vaporizable source material container 100 for storing and vaporizing a metal halide for thin film deposition as a vaporizable source material, and includes a buffer tank 101 coupled with the vaporizable source material container 100. In FIG. 1, a reference sign 102 denotes a source material supply source 102 for supplying a metal halide for thin film deposition A to the vaporizable source material container 100. Supply of the metal halide for thin film deposition A to the vaporizable source material container 100 may be performed in any of liquid, solid and vapor phases. A reference sign 103 denotes a semiconductor processing instrument 103, in which thin film deposition is performed by a chemical vapor deposition (CVD) method, a metalorganic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method. That is, the semiconductor processing instrument 103 is an instrument in which a substrate to be coated is set (for example, a reaction chamber of a CVD apparatus), and a desired thin film is deposited on the substrate set in the semiconductor processing instrument 103. A reference sign 104 denotes a heat exchanger 104. A reference sign 105 denotes a temperature controller. A reference sign 106 denotes a supply control means 106 for controlling the amount of supply or the like of a mixed gas G3 supplied from the buffer tank 101. Components constituting the supply control means 106 include a control valve, a flow meter, and a pressure gauge. A reference sign 107 denotes a carrier gas supply means 107. A carrier gas G1 include hydrogen, helium, nitrogen, oxygen, argon, carbon monoxide, carbon dioxide and the like. FIG. 1 shows an example where a carrier gas supply means 107 depicted on the upper part of of the page supplies nitrogen as the carrier gas G1, and another carrier gas supply means 107 depicted on the lower part of the page supplies argon as the carrier gas G1. The semiconductor processing instrument 103 is a processing instrument used in the solid vaporization/supply system 500, but is not a component of the solid vaporization/supply system 500 of the present embodiment. The source material supply source 102, the heat exchanger 104, the temperature controller 105, the supply control means 106, and the carrier gas supply means 107 are components appropriately added supplementarily to the solid vaporization/supply system 500 of the present embodiment. In FIG. 1, the components involved in giving and receiving various gases are coupled with each other via gas pipes 34.

(11) The solid vaporization/supply system 500 of the present embodiment stores the mixed gas G3 of the metal halide for thin film deposition G2 vaporized in the vaporizable source material container 100 and the carrier gas G1 introduced into the vaporizable source material container 100 in the buffer tank 101, and appropriately supply a desired amount of the mixed gas G3 from the buffer tank 101 to the semiconductor processing instrument 103. As a result, the solid vaporization/supply system 500 of the present embodiment can supply the mixed gas G3 at a high flow rate.

(12) As shown in FIGS. 2 and 3, the vaporizable source material container 100 includes a container main body 2, a lid body 4, fastening members 6 and joint members 8. FIG. 2 is a cross-sectional diagram schematically showing the vaporizable source material container employed as one in the embodiment of a solid vaporization/supply system of metal halide for thin film formation according to the present invention. FIG. 3 is a schematic cross-sectional diagram for illustrating gas flows of the carrier gas G1, the vaporizable source material having been vaporized (that is, vaporized metal halide for thin film deposition) G2 and the mixed gas G3, in the vaporizable source material container shown in FIG. 2.

(13) The container main body 2 has a container wall 12, and is a substantial main body part of the vaporizable source material container 100. The lid body 4 is configured to be detachably fixed to the container main body 2, and has a carrier gas inlet 16 for introducing the carrier gas G1 into the container main body 2 and a mixed gas outlet 18 for leading the mixed gas G3 of the vaporized metal halide for thin film deposition G2 with the carrier gas G1 to the outside. The fastening members 6 are those for fixing the container main body 2 with the lid body 4, for example, the fastening members 6 may be those each composed of a bolt member inserted into a bolt insertion hole provided in both the container main body 2 and the lid body 4, and of a nut member screwed and thereby fastened to the bolt member. The joint members 8 are those for coupling the carrier gas inlet 16 and the mixed gas outlet 18 of the lid body 4 with a valve 30, a pressure gauge 32, a flow meter (not depicted) or other components such as gas pipes.

(14) The container wall 12 of the container main body 2 has a double-wall structure 14 composed of an inner wall member 12a and an outer wall member 12b. Accordingly, the carrier gas G1 introduced from the carrier gas inlet 16 is introduced into the container main body 2 after passing through a space between the inner and outer wall members 12a and 12b of the double-wall structure 14. This constitution makes it possible to heat the carrier gas G1 introduced into the container main body 2 at the same time, when the container main body 2 is heated from the outside. Accordingly, the heated carrier gas G1 in contact with the metal halide for thin film deposition S charged in the container main body 2 enables the metal halide for thin film deposition S to be vaporized stably at a high flow rate. It is also possible to heat the inside of the container main body 2 via the inner wall member 12a of the container wall 12 by introducing the carrier gas G1 heated in advance into the vaporizable source material container 100. In FIGS. 2 and 3, a metal halide for thin film deposition charged in the container main body 2 is denoted by the reference sign S. In FIG. 1, a metal halide for thin film deposition before charge, which is supplied from the source material supply source 102, is denoted by the reference sign A.

(15) In the vaporizable source material container 100, the container wall 12 of the container main body 2 is fabricated of copper with 99 to 99.9999% purity, aluminum with 99 to 99.9999% purity or titanium with 99 to 99.9999% purity. A fluorocarbon polymer coating 10 is applied to the container main body 2, the lid body 4 and the joint members 8. To each of them, electrolytic polishing may be applied on their surfaces, instead of the fluorocarbon polymer coating 10. Besides, the fluorocarbon polymer coating 10 may be further applied to the surface of each of the bodies and members having been treated by electrolytic polishing. As a result, the vaporizable source material container 100 has excellent corrosion resistance. Particularly, metal halides generate an acid gas, such as of hydrogen chloride, by reacting with moisture, and accordingly, when a conventional vaporizable source material container is used, such an acid gas may cause corrosion not only inside the vaporizable source material container but also on the surfaces of the container main body, the lid body, the fastening members including the bolt members and nut members, and the joint members. In the vaporizable source material container 100, the fluorocarbon polymer coating 10 and/or electrolytic polishing are applied to each of the container main body 2, the lid body 4, the fastening members 6, and the joint members 8, and particularly even at its portions substantially not being in contact with the metal halide for thin film deposition S, which results in extremely excellent corrosion resistance. Accordingly, the solid vaporization/supply system 500 (refer to FIG. 1) employing the vaporizable source material container 100 configured as above can effectively reduce particle contamination.

(16) Because the container wall 12 of the container main body 2 is fabricated of copper with 99 to 99.9999% purity, aluminum with 99 to 99.9999% purity or titanium with 99 to 99.9999% purity, as described above, excellent thermal conductivity is achieved and the inside of the container wall 12 can be effectively heated. Particularly, by the configuration where the carrier gas G1 is in contact with the outer wall of the container wall 12 before being introduced into the container main body 2, the carrier gas G1 introduced into the container main body 2 can be effectively heated, and thereby promotes vaporization of the metal halide for thin film deposition S. When the carrier gas G1 is heated in advance to its introduction into the vaporizable source material container 100, the inside of the container main body 2 is thereby heated effectively via the inner wall member 12a of the container wall 12. Here, the term “purity” means a proportion (weight ratio) of the principal component in a sample determined by quantitative analysis. It is unfavorable that the purity of copper, aluminum or titanium constituting the container wall 12 is lower than 99%, in that the thermal conductivity of the container wall 12 is decreased. It is also unfavorable that the purity of copper, aluminum or titanium constituting the container wall 12 exceeds 99.9999%, in that the strength of the container wall 12 is decreased.

(17) In concept, the “container wall 12” includes not only the side wall but also the bottom wall. That is, it is preferable that any wall portion with which a vaporizable source material is in contact, when charged in the vaporizable source material container 100, is referred to as the container wall.

(18) As shown in FIGS. 2 and 3, the vaporizable source material container 100 has an internal inlet 20 to introduce the carrier gas G1 passed through a space between the inner and outer wall members 12a and 12b into the container main body 2 at a bottom surface portion of the inner wall member 12a constituting the container wall 12.

(19) A reference sign 30 in FIGS. 2 and 3 denotes valves 30 for opening and closing flow channels of the vaporizable source material container 100. By opening respective ones of the valves 30, the carrier gas G1 can be introduced into the vaporizable source material container 100 (into the container main body 2), and the mixed gas G3 with the carrier gas G1 can be led to the outside of the container main body 2. In this way, the vaporizable source material container 100 may include two or more on-off valves. A reference sign 32 in FIG. 2 denotes a pressure gauge, and a reference sign 34 in FIG. 3 denotes gas pipes.

(20) A material constituting the fluorocarbon polymer coating 10 is not limited particularly, but may be any coatable fluorocarbon polymer and, for example, may be a polymer in which at least some of its hydrogen atoms are substituted by fluorine atoms, or the like, specifically polytetrafluoroethylene (product name “Teflon” (registered trademark)) or the like. Using such a material is effective in preventing impurities from being incorporated further into the vaporizable source material.

(21) While the thickness of the fluorocarbon polymer coating 10 is not particularly limited, it is preferably set at, for example, 150 to 500 μm, more preferably 200 to 400 μm, and particularly preferably 250 to 350 μm. Most preferably, it is set at about 300 μm. When the thickness of the fluorocarbon polymer coating 10 is smaller than the above-mentioned lower limit value, it is likely that sufficient corrosion resistance cannot be achieved. When the thickness exceeds the above-mentioned upper limit value, it is likely that the coating is too thick.

(22) The fluorocarbon polymer coating 10 may be formed by, for example, vapor deposition, where a vapor deposition method employed there is not limited to any specific ones, but may be any conventionally known one.

(23) The fluorocarbon polymer coating 10 is preferably applied to every part of the inner and outer surfaces of the container main body 2, the inner and outer surfaces of the lid body 4, surfaces of the fastening members 6 and surfaces of the joint members 8. That is, the fluorocarbon polymer coating 10 is preferably applied, not only to surfaces to be in contact with the carrier gas G1, the vaporized metal halide for thin film deposition G2 and the mixed gas G3, but to the entire area of each of the bodies and members, including their surfaces (outer surfaces) that are generally considered not to be in contact with the above-mentioned gases.

(24) The electrolytic polishing applied to the container body 2 and the like is preferably, for example, a polishing treatment performed under a condition (i) described below. When such a polishing treatment is applied, in a case of further applying the fluorocarbon polymer coating 10, adhesion of the fluorocarbon polymer coating 10 is further improved.

(25) Condition (i):

(26) Using an electrode with a diameter of 250 to 350 mm, the current density is set at 28.5 mA/cm.sup.2 or lower, the concentration of electrolytic solution at 15 to 30 wt %, the solution flow rate at 1 to 8 L/min, and the pH of the electrolytic solution at an alkaline value. Further, as polishing conditions, the pressure is set at 20 to 60 kPa, the rotation speed at 350 rpm or lower, and inorganic grains with grain sizes from 0.020 to 0.10 μm are used as abrasive grains.

(27) In the condition (i) described above, the current density is preferably set at 15 to 20 mA/cm.sup.2. The pH of the electrolytic solution is preferably set at 11 to 11.5.

(28) The rotation speed in the polishing conditions may be set at 50 to 350 rpm. As the abrasive grains, inorganic grains are used, where the inorganic grains are particularly not limited and examples thereof include colloidal silica (colloidal SiO.sub.2) and the like.

(29) For example, the inner surface of the container wall 12 processed by such polishing treatment may come to have a surface roughness of Ra=0.8 to 1.1 μm.

(30) Whether or not such electrolytic polishing has been performed on a surface may be confirmed by microscopic observation of the surface using both an electron microscope and an atomic force microscope (AFM), for instance. An example of another method is to inspect the surface state by secondary electron mass spectroscopy.

(31) While, in the vaporizable source material container 100, the fluorocarbon polymer coating 10 and/or the electrolytic polishing are applied to each of the container main body 2, the lid body 4, the fastening members 6 and the joint members 8, the electrolytic polishing may be replaced by chemical polishing. Also with such a configuration, excellent corrosion resistance can be given as well. When the fluorocarbon polymer coating 10 is further applied after the chemical polishing, adhesion of the fluorocarbon polymer coating 10 is further improved as in the case where the electrolytic polishing is applied. As a result, contamination of moisture, oxygen or the like is reduced at the interface with the fluorocarbon polymer coating 10 for example, which leads to the improvement of adhesion of the fluorocarbon polymer coating 10.

(32) Materials of the lid body 4 and the fastening members 6 are not particularly limited, and examples thereof may include aluminum, copper, titanium, nickel alloy, aluminum alloy, super stainless steel, and stainless steel. Among them, examples of nickel alloy may include Hastelloy, Inconel and the like, where “Hastelloy” and “Inconel” are each an alloy containing Ni and Mo. When aluminum, copper or titanium is used, it preferably has a purity of 99% or higher, and more preferably a purity of 99 to 99.9999%.

(33) The composition of “Hastelloy” may be appropriately determined, and specifically is 40 to 60 wt % Ni with 30 to 50 wt % Mo.

(34) The composition of “Inconel” may be appropriately determined, and specifically is 20 to 50 wt % Ni with 70 to 50 wt % Mo.

(35) “Super stainless steel” is a stainless steel containing 17.00 to 19.50 wt % Ni, 19.00 to 21.00 wt % Cr, 5.50 to 6.50 wt % Mo, 0.16 to 0.24 wt % N and 0.50 to 1.00 wt % Cu, having a C content of 0.020 wt % or lower, a Si content of 0.80 wt % or lower, a Mn content of 1.00 wt % or lower, a P content of 0.030 wt % or lower and a S content of 0.015 wt % or lower, and thus being given a further improved corrosion resistance.

(36) As shown in FIG. 4, a vaporizable source material container 200 may include one or more members made of aluminum or copper whose maximum length is 1 to 30 mm in one direction inside its container main body 2. The vaporizable source material container 200 shown in FIG. 4 is illustrated to have a configuration further including one or more spherical members 26 that are made of aluminum and have a diameter of 2 to 30 mm. Here, such members to be included in the container main body 2 (for example, the spherical members 26 in FIG. 4) are preferably those having a spherical, spheroidal, leaf-like, spiral shape or another irregular shape. When the members are leaf-shaped ones, their width is preferably about 1 to 2 cm. When they are spheroidal or spiral members, their length in the longer direction (in other words, the longitudinal direction) is preferably about 1.5 to 3 cm. Also, when they are members having another irregular shape, their length in the longer direction is preferably about 1.5 to 3 cm. These members are made of aluminum, copper, or titanium and the same material as that of the container wall 12 may be used. For example, when the container wall 12 is made of copper with a purity of 99 to 99.9999%, the spherical members 26 are preferably made of copper. FIG. 4 is a cross-sectional diagram schematically showing another example of a vaporizable source material container. In FIG. 4, to similar components to those of the vaporized material container 100 shown in FIGS. 2 and 3, identical reference signs are assigned and their descriptions may be omitted.

(37) Having the spherical members 26 made of aluminum shown in FIG. 4, for example, leads to an advantage that thermal conductivity of the compounds in the container main body 2 can be raised. The number of members to be arranged in the container main body 2, such as the spherical members 26 shown in FIG. 4, is not limited particularly, and is preferably 10 to 20, for example.

(38) The vaporizable source material container 100 shown in FIGS. 2 and 3 may be further equipped with at least one plate-shaped shelf member 22 suspended in the container main body 2. The metal halide for thin film deposition S may be placed on the shelf member 22. One or more through holes 24 are formed on the shelf member 22 to allow the carrier gas G1, the vaporized metal halide for thin film deposition G2 and the mixed gas G3 to flow in the container main body 2.

(39) The shelf member 22 may be fabricated of a porous material, for example. In the shelf member 22 fabricated of a porous material, one or more through holes 24 shown in FIGS. 2 and 3 are not necessary to be formed. The porous material constituting the shelf member 22 allows the carrier gas G1, the vaporized metal halide for thin film deposition G2 and the mixed gas G3 to flow, in the container main body 2. Further, when the shelf member 22 is fabricated of a porous material, the shelf member 22 itself has a function as a filter and can collect and remove particles generated in the container main body 2. The porous material constituting the shelf member 22 may include ceramics.

(40) As shown in a vaporizable source material container 300 of FIG. 5, it is preferable that at least one of the plate-shaped shelf members 22 suspended from the container main body 2 is equipped with a shower head structure in which a plurality of through holes 24 are formed. The shower head structure refers to a structure in which a plurality of through holes 24 formed in the shelf member 22 serve as ejection holes of the carrier gas G1 and the like, thereby realizing shower-like flow of the gases. For example, gas flow channels through which the carrier gas G1 and the like flow are formed into a grid pattern inside the shelf member 22, and a plurality of through holes 24 are formed on the top surface of the shelf member 22. Here, FIG. 5 is a cross-sectional diagram schematically showing still another example of a vaporizable source material container. In FIG. 5, identical reference signs are assigned to similar components to those of the vaporizable source material container 100 shown in FIGS. 2 and 3, and descriptions thereof may be omitted.

(41) There is no specific restriction on arrangement of the plurality of through holes 24 formed in the shelf member 22, and for example, as in a shelf member 22 shown in FIG. 6, the through holes 24 may be formed uniformly on the surface of the shelf member 22. While it is not depicted in any diagrams, an alternative arrangement of the plurality of through holes 24 formed in the shelf member may be such that the plurality of through holes are formed in a manner to sequentially circle within the shelf member and accordingly arranged to draw a spiral locus. FIG. 6 is a top view schematically showing the shelf member depicted in FIG. 5.

(42) The metal halide for thin film deposition S to be used as a vaporizable source material is preferably a compound represented by a general formula (2) described below.
MXn  General formula (2):
(In the general formula (2), M represents any element among Al, Hf, Zr, Ta, W, Ga, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb and Co. X represents a halogen atom. n is the number of X atoms.)

(43) When the halogen atom X is chlorine (Cl), examples of the compound represented by the general formula (2) described above may include: aluminum chloride (AlCl.sub.3), hafnium chloride (HfCl.sub.4), zirconium chloride (ZrCl.sub.4), tantalum chloride (TaCl.sub.5), tungsten pentachloride (WCl.sub.5), tungsten hexachloride (WCl.sub.6), gallium chloride (GaCl.sub.3), lanthanum chloride (LaCl.sub.3), cerium chloride (CeCl.sub.3), praseodymium chloride (PrCl.sub.3), neodymium chloride (NdCl.sub.3), samarium chloride (SmCl.sub.3), europium chloride (EuCl.sub.3), gadolinium chloride (GdCl.sub.3), terbium chloride (TbCl.sub.3), dysprosium chloride (DyCl.sub.3), erbium chloride (ErCl.sub.3), thulium chloride (TmCl.sub.3), ytterbium chloride (YbCl.sub.3) and cobalt chloride (CoCl.sub.2).

(44) The vaporizable source material container 100 can favorably store even a highly corrosive vaporizable source material such as the above-mentioned compounds represented by the general formula (2), and accordingly the proportion of impurities which exists in the vaporizable source material becomes very small.

(45) The vaporizable source material container 100 is a container that is in contact with a heating medium or a cooling medium capable of heating or cooling from the outside, and accordingly can keep a compound within the container in either a gas state or a solid state.

(46) The buffer tank 101 used in the solid vaporization/supply system 500 shown in FIG. 1 is preferably made of, for example, a material with excellent thermal conductivity. The buffer tank 101 may be composed of a SUS member 316, for example, which is electrolytically polished inside and has the inner surface joined with a 4N or 5N high-purity Al. The buffer tank 101 may be the one whose main body is made of 4N or 5N high-purity Al. For example, a material of the buffer tank 101 is preferably made thick enough to withstand an internal pressure of 49 N or higher. An example of using the buffer tank 101 includes storing a mixed gas with a pressure similar to that of the carrier gas. In that case, the buffer tank 101 may be used as a single-line buffer tank for reducing fluctuation of the pressure and flow rate while the mixed gas is generated in the vaporizable source material container, and may also be used in another way where two buffer tanks 101 are provided and alternately used (that is, used as like a cylinder of the mixed gas). The way of providing two buffer tanks 101 and using them alternately is more desirable in that the supply pressure of the mixed gas constant can be kept constant while changing a flow rate of the mixed gas.

(47) The capacity of the buffer tank 102 is not particularly limited, and is preferably for example 10 to 100 times larger than that of the container main body of the vaporizable source material container. With this constitution, the mixed gas stored in the buffer tank 101 can be supplied stably.

(48) As for the solid vaporization/supply system 500 of the present embodiment, the valve 30 arranged at a portion of the gas flow path coupling the vaporizable source material container 100 with the buffer tank 101 preferably has a CV value (in terms of water) of 0.2 or more. In particular, a vacuum valve represented by a bellows valve is more preferable. The mixed gas can be supplied more effectively with such a valve. When the CV value (in terms of water) is less than 0.2, the flow of a great amount of the mixed gas may be hindered, and the mixed gas may stay in the valve. When the mixed gas stays in the valve, a temperature may decrease due to the heat of vaporization, the vaporizable source material (metal halide for thin film deposition) may accordingly stick in the valve, and the valve may be thereby blocked. By providing a valve with a CV value (in terms of water) of 0.2 or more, such blockage of the valve can be effectively prevented, and the mixed gas can be supplied without any trouble. The CV value of the valve is preferably 0.2 or more, more preferably 0.6 or more, and particularly preferably 1.0 or more. While there is no specific upper limit on the CV value, 3.0 or 2.5 may be given as an example of the upper limit value. Examples of a valve having the above-described CV value may include a diaphragm, a ball valve, a bellows valve, and the like. These valves are preferably independent of the valve function, body material, seat material, and temperature.

(49) The valve CV value described above is a value in terms of water that is measured by fully opening the valve and allowing water to flow through the valve. Specifically, a flow rate of a fluid (water) flowing through the valve is measured on both the inflow side and the outflow side of the valve. For example, a flow rate Q of the fluid flowing through the valve is measured using a flow meter. Next, pressure gauges are placed in the front and the rear of the valve, and a pressure loss ΔP of the fluid during its passing through the valve is measured. It is assumed that the flow rate Q and the pressure loss ΔP of the fluid in passing through the valve are measured in accordance with actual usage conditions. For example, the measurement is performed in a manner to make the values close to those of the actual usage conditions. For example, the flow rate Q of water can be determined from the specific gravity of the mixed gas and the specific gravity of water. For example, assuming that the specific gravity of water is 1, the specific gravity of each vaporizable source material is its own value (for example, 1.40 to 1.68) and the flow rate of a carrier gas is 500 cc/min, the flow rate Q of water is calculated to be 300 cc/min. The CV value is measured under a condition of 15° C.

(50) The vaporizable source material container 100 configured as described above can very effectively reduce particle contamination in the solid vaporization/supply system 500 shown in FIG. 1. Accordingly, the solid vaporization/supply system 500 of the present embodiment may be effectively used in thin film deposition by a chemical vapor deposition (CVD) method, a metalorganic chemical vapor deposition (MOCVD) method and an atomic layer deposition (ALD) method. Particularly, an atomic layer deposition (ALD) method can form a thinner film than a chemical vapor deposition (CVD) method, and a very thin film having a thickness about several nanometers can be formed by the ALD method, while accuracy of the film is susceptible impurities contained in the vaporizable source material. In this respect, by using the solid vaporization/supply system 500 of the present embodiment, particles (impurities) contained in the vaporizable source material can be reduced to an extremely small amount.

(51) [2] Fabrication Method of Solid Vaporization/Supply System:

(52) The vaporizable source material container of the solid vaporization/supply system may be fabricated as follows. First, the outer wall member of the container wall constituting the container main body is made of stainless steel or the like, using a conventionally known method. Subsequently, the inner wall member of the container wall constituting the container main body is made of copper, aluminum or titanium having a purity of 99 to 99.9999%, respectively. Then, the inner wall member is installed inside the outer wall member to construct the container main body. Further, the lid body configured to be detachably attached to the container main body is produced. Further, the bolt insertion holes for installing the fastening members are formed in both the container main body and the lid body, and the bolt and nut members are prepared as the fastening members compatible with the bolt insertion holes. In addition, various joint members to be arranged at the carrier gas inlet and the mixed gas outlet of the lid body are prepared. In this way, the bodies and members not having been subjected to treatment, which are to constitute the vaporizable source material container, are obtained (preparation step).

(53) Next, the bodies and members prepared as necessary are subjected to polishing treatment (polishing treatment step). Specifically, the inner surface of the bodies and members is polished each to obtain polished bodies and members. In the polishing treatment step, it is preferable to employ electrolytic polishing under the condition (i) already described above.

(54) Next, a fluorocarbon polymer coating is applied to each of the bodies and members (fluorocarbon polymer coating step). In this step, the fluorocarbon polymer coating may be formed by vapor deposition, as already described above. When the electrolytic polishing treatment under the condition (i) has been performed in the above-described polishing treatment step, the fluorocarbon polymer coating does not need to be applied.

(55) Next, the bodies and members are assembled into the vaporizable source material container (assembly step). The vaporizable source material container of the solid vaporization/supply system can be fabricated through the above-described steps.

(56) Next, the buffer tank is produced in the following way. First, a tank made of SUS is fabricated. A measuring gauge made of SUS capable of measuring pressure was installed on each of the top and bottom sides of the SUS tank, and further, a pressure valve provided with an H-shaped purge gas line is coupled to the SUS tank on its deposition chamber side. On a supply line on the cylinder side of the SUS tank, a three-way valve is installed. It is preferable that the buffer tank thus produced is designed such that the pressure gauge near the deposition chamber always indicates a constant supply pressure while injecting a supply gas into the SUS tank at a pressure equal to or higher than the saturation vapor pressure, and holding the temperature on the injecting side of the buffer tank and that on the deposition chamber side at 200 to 250° C. and 300 to 400° C., respectively, by an external heating method. The inside of the buffer tank is preferably subjected to an inner surface treatment using a material consisting of aluminum and/or Hastelloy after electrolytic polishing of the inner surface. Such inner surface treatment can be performed by joining or welding.

(57) By coupling thus produced vaporizable source material container and buffer tank with gas pipelines, the solid vaporization/supply system of the present invention can be fabricated. It is preferable that an on-off valve, a control valve, a flow meter and a measuring gauge such as a pressure gauge are appropriately placed on the gas pipelines coupling the vaporizable source material container with the buffer tank. As for the valve placed at a portion of the gas flow path coupling the vaporizable source material container with the buffer tank, a vacuum valve having a CV value (in terms of water) of 0.2 or more may be favorably used.

(58) [3] Usage of Solid Vaporization/Supply System

(59) First, as shown in FIG. 1, the carrier gas inlet 16 (refer to FIG. 2) of the vaporizable source material container 100 is coupled with the carrier gas supply means 107. The mutual couplings are performed using the gas pipes 34, where preferably, an on-off valve, a control valve, a flow meter, and a measuring gauge such as a pressure gauge are appropriately arranged. Further, the mixed gas outlet 18 (refer to FIG. 2) of the vaporizable source material container 100 is coupled with the buffer tank(s) 101. And the vaporizable source material container 100 is coupled with the source material supply source(s) 102 for supplying a metal halide for thin film deposition A to the vaporizable source material container 100. These couplings may be also performed using the gas pipes 34.

(60) Next, the buffer tank 101 is coupled with the supply control means 106 for controlling the amount of supply or the like of the mixed gas G3 to be supplied, and is coupled with the semiconductor processing instrument 103 via the supply control means 106.

(61) Next a metal halide for thin film deposition A is charged from the source material supply source(s) 102 into the vaporizable source material container 100, as a vaporizable source material, and subsequently the container main body 2 is made airtight.

(62) Next, the carrier gas G1 is introduced from the carrier gas supply means 107 into the vaporizable source material container 100. Then, the vaporizable source material having been vaporized in the vaporizable source material container 100 (vaporized metal halide for thin film deposition G2) is mixed with the carrier gas G1, and the resulting mixed gas G3 is led out from the mixed gas outlet 18 (refer to FIG. 2). Here, the vaporizable source material is vaporized (evaporated) by heating etc., to be a source gas. When the carrier gas G1 is introduced, the metal halide for thin film deposition S in the container main body 2 is heated by heating the container wall 12 of the container main body 2 as shown in FIGS. 2 and 3. At the same time, the carrier gas G1 is introduced from the carrier gas inlet 16 of the lid body 4 and made to pass through a space between the inner and outer wall members 12a and 12b of the double-wall structure 14 of the heated container wall 12, so that thus heated carrier gas G1 is led into the container main body 2. Then, the vaporized metal halide for thin film deposition G2 and the carrier gas G1 are mixed to generate the mixed gas G3. By this configuration, it becomes possible to make the heated carrier gas G1 contact with the metal halide for thin film deposition S, and accordingly vaporize the metal halide for thin film deposition S stably at a high flow rate.

(63) As shown in FIG. 1, the mixed gas G3 led out from the vaporizable source material container 100 is stored in the buffer tank 101 via the gas pipe 34. In a preferred example where two or more pieces of the buffer tank 101 are placed, a predetermined amount of the mixed gas G3 is stored into the first one of the buffer tanks 101, and subsequently the mixed gas G3 is stored sequentially into the second and subsequent ones.

(64) Then, the mixed gas G3 is supplied, as a gas for thin film deposition, from the buffer tanks 101 to the semiconductor processing instrument 103, in which thin film deposition is started using a chemical vapor deposition (CVD) method, a metalorganic chemical vapor deposition (MOCVD) method, an atomic layer deposition (ALD) method or the like. In the supply of the mixed gas G3 to the semiconductor processing instrument 103, the pressure and flow rate are each adjusted at a predetermined value by the supply control means 106.

(65) The vaporizable source material container 100 is excellent in corrosion resistance, and can extremely reduce the proportion of impurities originating from the container in the vaporizable source material. As a result, it becomes possible to supply the mixed gas G3 with a high purity to the semiconductor processing instrument 103.

EXAMPLES

(66) Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples, but the present invention is not limited thereto.

Examples 1 to 15 and Comparative Examples 1 to 15

(67) As shown in FIG. 2, vaporizable source material containers 100, each including the container main body 2, the lid body 4, the fastening members 6, and the joint members 8, were fabricated. In the present examples and comparative examples, container walls of the container main bodies of the vaporizable source material containers were made of, respectively, materials described in a column entitled as “container wall” consisting of “material” and “purity (%)” in Tables 1 and 2. Further, the surfaces of the container body, the lid body, the fastening members, and the joint members were subjected to polishing treatment under a polishing condition (i) described below. Subsequently, a fluorocarbon polymer coating was applied to the polished surface of each of the bodies and members. The fluorocarbon polymer coating was performed by vapor depositing polytetrafluoroethylene (Teflon) using an apparatus of an electron-beam vacuum evaporation method.

(68) Polishing Condition (i):

(69) Using an electrode with a diameter of 300 mm, the current density was set at 20 mA/cm.sup.2 or less, the concentration of electrolytic solution at 20 wt %, the solution flow rate at 3 L/min, and the pH of the electrolytic solution at 10. Further, as polishing conditions, the pressure was set at 31.35 kPa, the rotation speed at 300 rpm, and colloidal silica with a grain size of 0.07 μm was used as the abrasive grains.

(70) Buffer tanks were each produced in the following way. First, a tank made of SUS was fabricated. A measuring gauge made of SUS capable of measuring pressure was installed on each of the top and bottom sides of the SUS tank, and further, a pressure valve provided with an H-shaped purge gas line was coupled to the SUS tank on its deposition chamber side. On a supply line on the cylinder side of the SUS tank, a three-way valve was installed. The buffer tank thus produced was designed such that the pressure gauge near the deposition chamber always indicates a constant supply pressure while injecting a supply gas into the SUS tank at a pressure equal to or higher than the saturation vapor pressure, and holding the temperature on the injecting side of the buffer tank and that on the deposition chamber side at 200 to 250° C. and 300 to 400° C., respectively, by an external heating method. The capacities of the buffer tanks produced in the respective examples and comparative examples are described in a column entitled as “buffer tank capacity (L)” in Tables 1 to 6.

(71) By coupling a vaporizable source material container with buffer tanks by gas pipelines, a solid vaporization/supply system was fabricated. The gas pipeline is to be a gas flow path in which a mixed gas generated in the vaporizable source material container passes through. A valve having a CV value (in terms of water) of 1.5 was arranged at a portion of the gas pipeline coupling the vaporizable source material container with the buffer tank, and a mixed gas was supplied via the valve.

Examples 16 to 30

(72) In Examples 16 to 30, vaporizable source material containers were fabricated similarly to those in Examples 1 to 15 except that the fluorocarbon polymer coating was not applied. That is, in each of the vaporizable source material containers of Examples 16 to 30, only the polishing treatment under the above-described polishing condition (i) was performed on surfaces of the container main body, the lid body, the fastening members, and the joint members. In Examples 16 to 30, container walls of the container main bodies of the vaporizable source material containers were made of the materials described in a column entitled as “container wall” consisting of “material” and “purity (%)” in Table 3. Buffer tanks were produced in the above-described way, and each of solid vaporization/supply systems of the examples was fabricated in the way of coupling the vaporizable source material containers with the buffer tanks by gas pipelines. A valve having a CV value (in terms of water) of 1.5 was arranged at a portion of the gas pipeline where the vaporizable source material container is coupled with the buffer tanks, and a mixed gas was supplied via the valve.

(73) The metal halides for thin film deposition described in the column entitled as “source material (metal halide)” in Tables 1 to 3 were stored in each of the vaporizable source material container, where a carrier gas was supplied into the container main body and generated a mixed gas of the vaporized metal halide for thin film deposition with the carrier gas. The mixed gas was once stored in the buffer tank, and then used for thin film deposition by an atomic layer deposition (ALD) method. Compositions of ALD films thus deposited by the atomic layer deposition (ALD) method are described in Tables 4 to 6. Further, the amounts of impurities (12 elements shown in Tables 4 to 6) contained in each of the vaporizable source materials after the thin film deposition were measured by an ICPMS (inductively coupled plasma mass spectrometer). In a row entitled as “before thin film deposition” in Table 4, the amounts of impurities (12 elements shown in Tables 4 to 6) contained in the vaporizable source materials before the thin film deposition are described. In Tables 4 to 6, the flow rate of a reaction gas used in the ALD thin film deposition is described for each of the examples and comparative examples. The reaction gas flow rates in Tables 1 to 3 shows the flow rate of the reaction gas generated in the vaporizable source material container.

(74) The amount of impurities was measured in a way described below. First, after the film deposition, residues of the vaporizable source material left in the container main body of the vaporizable source material container were collected. Next, in an apparatus of ICPMS (inductively coupled high frequency plasma mass spectrometry), a predetermined amount of the collected substance was dissolved in aqua regia. Subsequently, the solution was heated to 120° C. on a hot plate, thereby being evaporated to dryness. Then, the substance having been dried by evaporation was diluted to obtain a measurement sample. Then, metal impurities in the measurement sample were measured with the analysis apparatus described above.

(75) Before and after the thin film deposition, the surface roughness of the inner surface of the container main body 2 was measured by an AFM analyzer (atomic force microscope) (manufactured by HORIBA). The surface roughness was measured plural times to calculate their average value. The surface roughness values after and before thin film deposition were represented by A and B, respectively. A value (A/B) corresponding to a result of dividing A by B was calculated. The calculated “A/B” values are described in a column entitled as “inner surface roughness” in Tables 4 to 6.

(76) A growth rate (GPC: Growth Per Cycle) was measured in the thin film deposition by the atomic layer deposition (ALD) method. Specifically, in depositing the thin film described above, the valve was opened and closed once every 0.2 seconds to introduce the mixed gas containing the vaporizable source material into the deposition chamber. Assuming that 0.2 seconds is the time for a valve to take for one opening/closing as one cycle, and by measuring the thickness of a film deposited on an 8-inch silicon wafer, a growth rate of the film per unit time (1 cycle) was calculated.

(77) TABLE-US-00001 TABLE 1 source buffer reaction container wall fluorocarbon material tank gas O.sub.3 purity electrolytic polymer (metal capacity flow rate material (%) polishing coating halide) (L) (ccm) Example 1 Al 99.999 applied applied AlCl.sub.3 60 300 Example 2 Ti 99.9999 applied applied HfCl.sub.4 80 400 Example 3 Al 99.999 applied applied ZrCl.sub.4 100 500 Example 4 Ti 99.999 applied applied WCl.sub.5 200 400 Example 5 Ti 99.9999 applied applied WCl.sub.6 300 280 Example 6 Al 99.9999 applied applied LaCl.sub.3 400 300 Example 7 Al 99.999 applied applied CoCl.sub.2 500 200 Example 8 Al 99.999 applied applied WF.sub.5 600 100 Example 9 Ti 99.999 applied applied HfI.sub.4 60 500 Example 10 Ti 99.9999 applied applied ZrI.sub.4 80 600 Example 11 Al 99.9999 applied applied LaI.sub.3 100 800 Example 12 Al 99.999 applied applied LaF.sub.3 200 500 Example 13 Al 99 applied applied AlCl.sub.3 300 300 Example 14 Cu 99.999 applied applied AlCl.sub.3 400 700 Example 15 Cu 99.999 applied applied ZrCl.sub.4 500 100

(78) TABLE-US-00002 TABLE 2 source buffer reaction container wall fluorocarbon material tank gas O.sub.3 purity electrolytic polymer (metal capacity flow rate material (%) polishing coating halide) (L) (ccm) Comp. Ex. 1 SUS316L — applied not applied AlCl.sub.3 60 300 Comp. Ex. 2 SUS316L — applied not applied HfCl.sub.4 80 400 Comp. Ex. 3 SUS316L — applied not applied ZrCl.sub.4 100 500 Comp. Ex. 4 SUS316L — applied not applied WCl.sub.5 200 400 Comp. Ex. 5 SUS316L — applied not applied WCl.sub.6 300 280 Comp. Ex. 6 SUS316L — applied not applied LaCl.sub.3 400 300 Comp. Ex. 7 SUS316L — applied not applied CoCl.sub.2 500 200 Comp. Ex. 8 SUS316L — applied not applied WF.sub.6 600 100 Comp. Ex. 9 SUS316L — applied not applied HfI.sub.4 60 500 Comp. Ex. 10 SUS316L — applied not applied ZrI.sub.4 80 600 Comp. Ex. 11 SUS316L — applied not applied LaI.sub.3 100 800 Comp. Ex. 12 SUS316L — applied not applied LaF.sub.3 200 500 Comp. Ex. 13 Al 98 applied applied WF.sub.6 300 300 Comp. Ex. 14 Ti 98 applied applied AlCl.sub.3 400 700 Comp. Ex. 15 Al 99.999 not applied not applied WF.sub.6 500 100 Comp. Ex. 16 Ti 99.999 not applied not applied AlCl.sub.3 600 450

(79) TABLE-US-00003 TABLE 3 source buffer reaction container wall fluorocarbon material tank gas Ar + O.sub.3 purity electrolytic polymer (metal capacity flow rate material (%) polishing coating halide) (L) (ccm) Example 16 Al 99.999 applied not applied AlCl.sub.3 60 2000 Example 17 Ti 99.9999 applied not applied HfCl.sub.4 80 4000 Example 18 Al 99.999 applied not applied ZrCl.sub.4 100 3000 Example 19 Ti 99.999 applied not applied WCl.sub.5 200 5000 Example 20 Ti 99.9999 applied not applied WCl.sub.6 300 1000 Example 21 Al 99.9999 applied not applied LaCl.sub.3 400 1400 Example 22 Al 99.999 applied not applied CoCl.sub.2 500 3500 Example 23 Al 99.999 applied not applied WF.sub.5 600 7000 Example 24 Ti 99.999 applied not applied HfI.sub.4 60 8000 Example 25 Ti 99.9999 applied not applied ZrI.sub.4 80 3000 Example 26 Al 99.9999 applied not applied LaI.sub.3 100 6000 Example 27 Al 99.999 applied not applied LaF.sub.3 200 7250 Example 28 Al 99 applied applied AlCl.sub.3 300 8000 Example 29 Cu 99.999 applied not applied AlCl.sub.3 400 2000 Example 30 Cu 99.999 applied not applied ZrCl.sub.4 500 2000

(80) TABLE-US-00004 TABLE 4 growth inner buffer reaction rate surface tank gas O.sub.3 ALD impurity content in residues after thin film deposition (ppb) GPC roughness capacity flow rate film Na K Ca Fe Ni Cu Cr Mo Mn Ti V Y (nm) A/B (L) (ccm) Example 1 Al.sub.2O.sub.3 0.1 0.5 0.4 2 0.1 0.8 0.2 0.5 2 1.2 1.6 0.2 1.2 1 80 30 Example 2 HfO.sub.2 0.2 0.1 0.4 5 0.3 0.8 0.5 0.5 1 1.2 1.6 0.2 1.5 1.1 60 20 Example 3 ZrO.sub.2 0.1 0.5 0.4 2 0.5 0.8 0.2 0.8 1 1.2 2 0.3 1 1 100 80 Example 4 WO.sub.3 0.5 0.6 0.4 3 0.1 0.8 0.2 0.5 3 1.2 3 0.3 3.1 0.9 200 100 Example 5 WN 0.1 0.5 0.5 2 0.1 0.5 0.8 0.5 2 1.2 1.6 0.2 2.1 0.9 300 50 Example 6 La.sub.2O.sub.3 0.4 0.8 0.5 2 0.8 0.5 0.7 0.7 1 1.2 1.6 0.2 1.5 1.1 500 20 Example 7 CoN 0.2 0.5 0.4 4 0.1 0.2 0.2 0.5 1 1.2 2 0.5 1.8 1.2 600 100 Example 8 W 0.1 0.7 0.6 3 0.5 0.5 0.2 0.5 2 1.2 1.6 0.4 2 1 400 30 Example 9 HfN 0.2 0.6 0.8 2 0.2 0.8 0.1 0.5 3 1.2 2 0.2 3 1.2 60 250 Example 10 ZrN 0.1 0.5 0.4 2 0.1 0.5 0.2 0.6 2 1.2 1.6 0.4 8 1.2 80 300 Example 11 LaN 0.7 0.5 0.8 2 0.8 0.7 0.1 0.5 4 1.2 2 0.5 6 0.9 100 400 Example 12 La.sub.2O.sub.3 0.1 0.5 0.4 3 0.1 0.5 0.2 0.5 2 1.2 1.6 0.2 2.9 0.9 200 50 Example 13 Al.sub.2O.sub.3 0.5 0.6 0.4 3 0.1 0.8 0.2 0.5 3 1.2 3 0.3 3.1 0.95 300 84 Example 14 Al.sub.2O.sub.3 0.1 0.5 0.4 2 0.1 0.5 0.2 0.6 2 1.2 1.6 0.4 8 1.1 400 30 Example 15 ZrO.sub.2 0.08 0.5 0.5 2 0.1 0.5 0.8 0.5 4 1.2 2 0.5 0.8 0.7 500 60 before deposition — 0.1 0.5 0.4 2 0.1 0.5 0.1 0.5 1 1.2 1.5 0.1 — —

(81) TABLE-US-00005 TABLE 5 inner reaction growth surface buffer gas rate rough- tank NH.sub.3/O.sub.2 ALD impurity content in residues after thin film deposition (ppb) GPC ness capacity flow film Na K Ca Fe Ni Cu Cr Mo Mn Ti V Y (nm) A/B (L) rate Comp. Al.sub.2O.sub.3 3000 2500 2000 1500 1000 500 2500 5000 2530 1560 1560 1560 0.001 5.1 60 200 Ex. 1 Comp. HfO.sub.2 2014 2300 2586 2872 3158 3444 3730 4016 2530 1850 1850 1850 0.005 4.3 80 350 Ex. 2 Comp. ZrO.sub.2 2015 2800 4800 2801 2850 8520 2580 3980 2530 1630 1630 1800 0.002 3.5 100 400 Ex. 3 Comp. WN 3000 3000 2506 2301 1580 5820 1750 5820 2500 1790 1790 1790 0.001 2.5 200 800 Ex. 4 Comp. WO.sub.3 5000 6500 2360 2850 2304 2900 1820 2800 2400 1700 1830 1700 0.014 2.6 300 400 Ex. 5 Comp. La.sub.2O.sub.3 2500 23500 3172 3104 2487 6390 1474 3544 2411 1772 1876 1806 0.014 3.5 400 600 Ex. 6 Comp. CoN 2100 18547 3758 3316 2590 7107 1140 3285 2382 1794 1924 1828 0.012 2.1 500 1000 Ex. 7 Comp. W 2700 21912 6000 3529 2693 7825 8020 3025 2353 1816 1972 1850 0.15 3.5 600 280 Ex. 8 Comp. HfN 3500 25278 2850 3742 2796 8542 8020 2766 2324 1838 2020 1872 0.03 3.5 60 250 Ex. 9 Comp. ZrN 2500 28644 4870 3955 2899 9260 138 2506 2295 1860 2068 1894 0.001 4.1 80 300 Ex. 10 Comp. LaN 4200 32010 4344 4168 3002 9978 1960 2246 2266 1882 2116 1916 0.006 2.5 100 400 Ex. 11 Comp. La.sub.2O.sub.3 3500 35375 4930 4381 3105 10695 5300 1987 2237 1904 2164 1938 0.023 2.8 200 550 Ex. 12 Comp. W 2100 18547 3758 3316 2590 7107 1140 3285 2382 1794 1924 1828 0.0002 4.1 300 365 Ex. 13 Comp. Al.sub.2O.sub.3 21912 6000 3529 2693 7825 8020 3025 3758 3316 2590 9260 138 0.0001 3.5 400 400 Ex. 14 Comp. W 3500 25278 2850 3742 2796 8542 4700 2766 2324 1838 2020 1872 0.002 2.4 500 276 Ex. 15 Comp. Al.sub.2O.sub.3 2015 2800 4800 2801 2850 8520 2580 3980 2530 1630 1630 1800 0.003 2.4 600 350 Ex. 16

(82) TABLE-US-00006 TABLE 6 reaction growth inner buffer gas rate surface tank NH.sub.3/O.sub.2 ALD impurity content in residues after thin film deposition (ppb) GPC roughness capacity flow film Na K Ca Fe Ni Cu Cr Mo Mn Ti V Y (nm) A/B (L) rate Example 16 Al.sub.2O.sub.3 0.1 0.5 0.4 2 0.1 0.8 0.2 0.5 2 1.2 1.6 0.2 1.1 1.5 60 200 Example 17 HfO.sub.2 0.2 0.1 0.4 5 0.3 0.8 0.5 0.5 1 1.2 1.6 0.2 1.5 1 80 350 Example 18 ZrO.sub.2 0.1 0.5 0.4 2 0.5 0.8 0.2 0.8 1 1.2 2 0.3 1.5 1 100 400 Example 19 WN 0.1 0.5 0.5 2 0.1 0.5 0.8 0.5 2 1.2 1.6 0.2 2.1 0.9 200 800 Example 20 WO.sub.3 0.5 0.6 0.4 3 0.1 0.8 0.2 0.5 3 1.2 3 0.3 2.9 1 300 400 Example 21 La.sub.2O.sub.3 0.4 0.8 0.5 2 0.8 0.5 0.7 0.7 1 1.2 1.6 0.2 1.5 1.1 400 600 Example 22 CoN 0.2 0.5 0.4 4 0.1 0.2 0.2 0.5 1 1.2 2 0.5 1.5 1.1 500 1000 Example 23 W 0.1 0.7 0.6 3 0.5 0.5 0.2 0.5 2 1.2 1.6 0.4 2 1 600 280 Example 24 HfN 0.2 0.6 0.8 2 0.2 0.8 0.1 0.5 3 1.2 2 0.2 3 1.2 60 250 Example 25 ZrN 0.1 0.5 0.4 2 0.1 0.5 0.2 0.6 2 1.2 1.6 0.4 6 1 80 300 Example 26 LaN 0.7 0.5 0.8 2 0.8 0.7 0.1 0.5 4 1.2 2 0.5 6 0.9 100 400 Example 27 La.sub.2O.sub.3 0.1 0.5 0.4 3 0.1 0.5 0.2 0.5 2 1.2 1.6 0.2 4 0.9 200 550 Example 28 Al.sub.2O.sub.3 0.5 0.8 0.1 0.5 0.2 0.6 0.4 3 0.1 0.8 0.6 2 1.1 0.7 300 365 Example 29 AlN 0.1 0.5 0.4 2 0.1 0.5 0.2 0.6 2 1.2 1.6 0.4 8 0.9 400 400 Example 30 ZrO.sub.2 0.4 0.8 0.5 2 0.8 0.5 0.7 0.7 1 1.2 1.6 0.2 2.2 1.1 500 276

Examples 31 to 45

(83) In Examples 31 to 45, vaporizable source material containers were fabricated in a similar way to those in Examples 1 to 15. In Example 31, a similar vaporizable source material container as in Example 1 was fabricated. In Example 32 and subsequent examples, vaporizable source material containers respectively corresponding to those of Example 2 and subsequent examples were fabricated in numerical order. Further, buffer tanks were fabricated in the above-described way, and solid vaporization/supply systems were fabricated by coupling the vaporizable source material container with the buffer tank by a gas pipeline. A valve having a CV value (in terms of water) of 1.5 was arranged at a portion of the gas pipeline coupling the vaporizable source material container with the buffer tank, and a mixed gas was supplied via the valve. Capacities of the respective buffer tanks are described in Table 7. Then, thin film deposition by an atomic layer deposition (ALD) method was performed similarly to in Examples 1 to 15. In each of Examples 31 to 45, a mixed gas was generated without loading such substances as the spherical members in the source material container.

Comparative Examples 17 to 32

(84) In Comparative Examples 17 to 32, vaporizable source material containers were fabricated in a similar way to those used in Comparative Examples 1 to 16. In Comparative Example 17, a similar vaporizable source material container to that of Comparative Example 1 was fabricated. In Comparative Example 18 and subsequent comparative examples, vaporizable source material containers respectively corresponding to those of Comparative Example 2 and subsequent comparative examples were fabricated in numerical order. In each of Comparative Examples 17 to 32, a solid vaporization/supply system was composed of a corresponding one of the vaporizable source material containers and a gas pipeline coupled to it, without including any buffer tanks, and thin film deposition by an atomic layer deposition (ALD) method was performed by directly supplying a mixed gas from the vaporizable source material container.

(85) Compositions of ALD films deposited by the atomic layer deposition (ALD) method in Examples 31 to 45 and Comparative Examples 17 to 32 are described in Tables 7 and 8. The amounts of impurities (12 elements shown in Tables 7 and 8) contained in each of the vaporizable source materials after the thin film deposition were measured by an ICPMS (inductively coupled plasma mass spectrometer). In a row entitled as “before thin film deposition” in Table 7, the amounts of impurities (12 elements shown in Tables 7 and 8) contained in the vaporizable source materials before the thin film deposition are described. The flow rate of a reaction gas is described in Tables 7 and 8. In a similar way to the above-described one, “inner surface roughness” and “growth rate” were measured, and results thereof are described in Tables 7 and 8.

(86) TABLE-US-00007 TABLE 7 reaction growth inner buffer gas rate surface tank NH.sub.3/O.sub.2 impurity content in residues after thin film deposition (ppb) GPC roughness capacity flow rate ALD film Na K Ca Fe Ni Cu Cr Mo Mn Ti V Y (nm) A/B (L) (ccm) Example 31 Al.sub.2O.sub.3 0.7 0.5 0.8 2 0.8 0.7 0.1 0.5 4 1.2 2 0.5 6 0.9 100 4000 Example 32 HfO.sub.2 0.5 0.6 0.4 3 0.1 0.8 0.2 0.5 3 1.2 3 0.3 3.1 0.9 300 500 Example 33 ZrO.sub.2 0.4 0.8 0.5 2 0.8 0.5 0.7 0.7 1 1.2 1.6 0.2 1.5 1.1 400 300 Example 34 WN 0.4 0.8 0.5 2 0.8 0.5 0.7 0.7 1 1.2 1.6 0.2 1.5 0.95 500 600 Example 35 WO.sub.3 0.2 0.1 0.4 5 0.3 0.8 0.5 0.5 1 1.2 1.6 0.2 1.5 1.1 80 300 Example 36 La.sub.2O.sub.3 0.2 0.5 0.4 4 0.1 0.2 0.2 0.5 1 1.2 2 0.5 1.8 1.2 500 200 Example 37 CoN 0.2 0.6 0.8 2 0.2 0.8 0.1 0.5 3 1.2 2 0.2 3 1.2 60 2500 Example 38 W 0.1 0.5 0.4 2 0.1 0.8 0.2 0.5 2 1.2 1.6 0.2 1.2 1 60 200 Example 39 HfN 0.1 0.5 0.4 2 0.5 0.8 0.2 0.8 1 1.2 2 0.3 1 1 100 800 Example 40 ZrN 0.1 0.5 0.5 2 0.1 0.5 0.8 0.5 2 1.2 1.6 0.2 2.1 0.9 200 1000 Example 41 LaN 0.1 0.7 0.6 3 0.5 0.5 0.2 0.5 2 1.2 1.6 0.4 2 1 600 1000 Example 42 La.sub.2O.sub.3 0.1 0.5 0.4 2 0.1 0.5 0.2 0.6 2 1.2 1.6 0.4 8 1.2 80 3000 Example 43 Al.sub.2O.sub.3 0.1 0.5 0.4 3 0.1 0.5 0.2 0.5 2 1.2 1.6 0.2 2.9 0.9 200 500 Example 44 AlN 0.1 0.5 0.4 2 0.1 0.5 0.2 0.6 2 1.2 1.6 0.4 8 1.1 400 300 Example 45 HfO.sub.2 0.1 0.5 0.4 2 0.1 0.5 0.1 0.5 1 1.2 1.5 0.1 0.8 0.7 300 840 before deposition — 0.08 0.5 0.4 2 0.5 0.8 0.2 0.8 3 1.2 2 0.2

(87) TABLE-US-00008 TABLE 8 reaction growth inner buffer gas rate surface tank NH.sub.3/O.sub.2 ALD impurity content in residues after thin film deposition (ppb) GPC roughness capacity flow rate film Na K Ca Fe Ni Cu Cr Mo Mn Ti V Y (nm) A/B (L) (ccm) Comp. ZrO.sub.2 2015 2800 4800 2801 2850 8520 2580 3980 2530 1630 1630 1800 0.002 3.5 no buffer 200 Ex. 17 tank Comp. WO.sub.3 5000 6500 2360 2850 2304 2900 1820 2800 2400 1700 1830 1700 0.014 2.6 provided 350 Ex. 18 Comp. WN 3000 3000 2506 2301 1580 5820 1750 5820 2500 1790 1790 1790 0.001 2.5 400 Ex. 19 Comp. W 2700 2191 6000 3529 2693 7825 8020 3025 2353 1816 1972 1850 0.15 3.5 800 Ex. 20 Comp. La.sub.2O.sub.3 2500 2350 3172 3104 2487 6390 1474 3544 2411 1772 1876 1806 0.014 3.5 400 Ex. 21 Comp. HfO.sub.2 2014 2300 2586 2872 3158 3444 3730 4016 2530 1850 1850 1850 0.005 4.3 600 Ex. 22 Comp. CoN 2100 1854 3758 3316 2590 7107 1140 3285 2382 1794 1924 1828 0.012 2.1 1000 Ex. 23 Comp. Al.sub.2O.sub.3 3000 2500 2000 1500 1000 5000 2500 5000 2530 1560 1560 1560 0.001 5.1 280 Ex. 24 Comp. HfN 3500 2527 2850 3742 2796 8542 8020 2766 2324 1838 2020 1872 0.03 3.5 250 Ex. 25 Comp. ZrN 2500 2864 4870 3955 2899 9260 1389 2506 2295 1860 2068 1894 0.001 4.1 300 Ex. 26 Comp. LaN 4200 2864 4344 4168 3002 9978 1960 2246 2266 1882 2116 1916 0.006 2.5 400 Ex. 27 Comp. ZrO.sub.2 3500 2527 2850 3742 2796 8542 4700 2766 2324 1838 2020 1872 0.002 2.4 550 Ex. 28 Comp. ZrN 3500 6000 3529 2693 7825 8020 3025 3758 3316 2590 9260 1389 0.0001 3.5 365 Ex. 29 Comp. La.sub.2O.sub.3 3500 3537 4930 4381 3105 1069 5300 1987 2237 1904 2164 1938 0.023 2.8 400 Ex. 30 Comp. HfO.sub.2 2015 2800 4800 2801 2850 8520 2580 3980 2530 1630 1630 1800 0.003 2.4 276 Ex. 31 Comp. Al.sub.2O.sub.3 2100 1854 3758 3316 2590 7107 1140 3285 2382 1794 1924 1828 0.0002 4.1 350 Ex. 32
[Results]

(88) As can be seen from the results of Tables 4 to 8, in the cases using the solid vaporization/supply systems of Examples 1 to 45, the amounts of impurities are smaller compared with in the case using those of Comparative Examples 1 to 32. In Examples 1 to 45, the vaporizable source material containers used in the solid vaporization/supply systems have values of “A/B” in the column “inner surface roughness” close to 1, which means that the differences in surface roughness are small between before and after the thin film deposition. The smallness of the differences in surface roughness indicates that the degree of corrosion due to the vaporizable source materials was small, and accordingly indicates high corrosion resistance. Additionally, each of the solid vaporization/supply systems of Examples 1 to 45 has the buffer tank on the downstream side of its vaporizable source material container, which enables the mixed gas containing the vaporized source material to be supplied at a higher flow rate, and thereby leads to an excellent growth rate in the ALD thin film growth.

INDUSTRIAL APPLICABILITY

(89) The solid vaporization/supply system according to the present invention is applicable to thin film deposition by a chemical vapor deposition (CVD) method, a metalorganic chemical vapor deposition (MOCVD) method and an atomic layer deposition (ALD) method.

REFERENCE SIGNS LIST

(90) 2: container main body, 4: lid body, 6: fastening member, 8: joint member, 10: fluorocarbon polymer coating, 12: container wall, 12a: inner wall member, 12b: outer wall member, 14: double-wall structure, 16: carrier gas inlet, 18: mixed gas outlet, 20: internal inlet, 22: shelf member, 24: through hole, 26: spherical member, 30: valve, 32: pressure gauge, 34: gas pipe, 500: solid vaporization/supply system, 100, 200, 300: vaporizable source material container, 101: buffer tank, 102: source material supply source, 103: semiconductor processing instrument, 104: heat exchanger, 105: temperature controller, 106: supply control means, 107: carrier gas supply means, A: metal halide for thin film deposition (metal halide for thin film deposition supplied from source material supply source), G1: carrier gas, G2: vaporized metal halide for thin film deposition (vaporizable source material having been vaporized), G3: mixed gas, S: metal halide for thin film deposition (vaporizable source material).