PIEZOELECTRIC FILM AND PROCESS FOR PRODUCING SAME

20180097171 ยท 2018-04-05

    Inventors

    Cpc classification

    International classification

    Abstract

    A piezoelectric film which is better in heat and deformation resistant properties than those in the prior art is provided along with a method of manufacture. The film is a piezoelectric film that is composed of a copolymer of vinylidene fluoride and trifluoroethylene, the copolymer having a content of vinylidene fluoride in a range of not less than 82 mol % and not more than 86 mol % and having a molecular weight not less than 600,000. The piezoelectric film is subjected to a heat treatment for crystallization of the copolymer at a temperature ranging from not less than 140? C. to not more than 150? C., and is thereby caused to develop piezoelectric property. The piezoelectric film further has a heat resistance of not less than 140? C. and a breaking distortion of not less than 8% and not more than 55%, and an excellent deformation resistant property.

    Claims

    1. A piezoelectric film composed of a copolymer of vinylidene fluoride and trifluoroethylene, wherein: the copolymer has a content of vinylidene fluoride in a range of not less than 82 mol % and not more than 86 mol % and the copolymer has a molecular weight of not less than 600,000 (/mol).

    2. A piezoelectric film as set forth in claim 1, wherein said piezoelectric film comprises a film of said copolymer which is coated on a substrate and dried thereon, whereon said film dried is heat-treated at a temperature in a range of not less than 140? C. and not more than 150? C. for crystallization of the copolymer to develop a piezoelectric property thereof.

    3. A piezoelectric film as set forth in claim 1, wherein said piezoelectric film has a heat resistance of not less than 140? C. and is good in deformation resistance, having a breaking distortion of not less than 8% and not more than 55%.

    4. A method of making a piezoelectric film, further comprising the steps of preparing a solution containing a solvent and a copolymer of vinylidene fluoride and trifluoroethylene in which vinylidene fluoride is contained at a proportion in a range from not less than 82 mol % to not more than 86 mol % and whose molecular weight is not less than 600,00 (/mol); coating and drying the solution on a substrate to form a film of the copolymer thereon; and subjecting said film to a heat treatment at a temperature in a range of not less than 140? C. and not more than 150? C. for crystallization of the copolymer, thereby developing a piezoelectric property thereof.

    5. A method of making a piezoelectric film as set forth in claim 4, wherein the piezoelectric film made has a heat resistance of not less than 140? C. and a breaking strain in a range of not less than 8% and not more than 55%.

    6. A piezoelectric film as set forth in claim 2, wherein said piezoelectric film has a heat resistance of not less than 140? C. and is good in deformation resistance, having a breaking distortion of not less than 8% and not more than 55%.

    Description

    BRIEF DESCRIPTION OF THE DRAWINGS

    [0018] In the Drawings:

    [0019] FIG. 1 is a flow chart of process steps of a method of making a piezoelectric film in a form of implementation of the present invention;

    [0020] FIG. 2 is a graph illustrating a relationship between stress (MPa) and strain or distortion (%) of a piezoelectric film P with VDF/TrFE=85/15);

    [0021] FIG. 3 is a graph illustrating thermal characteristics relating to specimens of varied compounding ratios of a piezoelectric film P [VDF/TrFE]; and

    [0022] FIG. 4 is a graph of comparative data of heat resistance of a specimen of piezoelectric film of copolymer crystallized in which the VDF/TrFE compounding ratio is 85/15 (higher molecular weight) and heat resistance of a specimen of piezoelectric film of copolymer crystallized in which the VDF/TrFE compounding ratio is 75/25.

    MODES FOR CARRYING OUT THE INVENTION

    [0023] A piezoelectric film in a form of embodiment of the present invention, which is composed of a copolymer of vinylidene fluoride and trifluoroethylene, is featured in that vinylidene fluoride is contained in a range of not less than 82 mol % and not more than 86 mol % and that the copolymer has a molecular weight in a range of not less than 600,000 (/mol).

    [0024] The piezoelectric film mentioned above is in the form of a film of the composition which is coated on a substrate and is then dried and formed thereon. The formed film of that copolymer is thereafter subjected to a heat treatment at a temperature in a range of not less than 140? C. and not more than 150? C. and is thereby crystallized to develop a piezoelectric property.

    [0025] The piezoelectric film that results has a heat resistance of not less than 140? C. and an excellent distortion or deformation resistance as measured by a breaking strain or distortion of not less than 8% and not more than 55%.

    [0026] The method of making a piezoelectric film in a form of implementation of the present invention is featured in that a mixture or solution of a solvent and a copolymer of vinylidene fluoride and trifluoroethylene in which vinylidene fluoride is contained at a proportion in a range of not less than 82 mol % and not more than 86% and whose molecular weight is not less than 600,000 (/mol) is coated on a substrate and then dried to form a film of the copolymer, which is thereafter subjected to a heat treatment at a temperature in a range of not less than 140? C. and not more than 150? C. and thereby crystallized to develop a piezoelectric property.

    [0027] The said piezoelectric film has a heat resistance of not less than 140? C. and a breaking distortion of not less than 8% and not more than 55%.

    Example 1

    [0028] FIG. 1 is a flow chart of process steps of a method of making a piezoelectric film. The method or process of making a piezoelectric film is carried out in the process steps in the order indicated: the step of liquid preparation followed by .fwdarw.coating step.fwdarw.drying step.fwdarw.step of heat treatment for crystallizing.fwdarw.step of electrode forming.fwdarw.step of dielectric polarization to provide a P [VDF/TrFE] piezoelectric film.

    [0029] For a detailed description of these individual process steps, mention is made in order below

    [0030] Step of Liquid Preparation:

    [0031] A liquid solution is prepared containing a copolymer of vinylidene fluoride (VDF) and trifluoroethylene (TrFE), and a solvent (DMF).

    [0032] Coating Step:

    [0033] A PET material to constitute a substrate is prepared, and the said solution is coated on the said PET substrate to form a film of coating which dried at normal room temperature has a thickness of 50 ?m.

    [0034] Drying Step:

    [0035] Using a hot plate as drying equipment, the film of coating is dried in a draft under an atmospheric pressure at a temperature of 80? C. for a period of 1 hour.

    [0036] Heat Treatment for Crystallization

    [0037] In an oven of convection type as equipment, the film is heat-treated at a temperature in a range from not less than 140? C. to not more than 150? C. for crystallization of the copolymer to develop a piezoelectric property thereof.

    [0038] Electrode Forming:

    [0039] Using a vacuum evaporator of resistance heating type, aluminum is evaporated by heating under an atmospheric pressure in a range between 1 and 3?10.sup.?5 Pa to form an aluminum electrode layer on each of both sides of the film.

    [0040] Dielectric Polarization:

    [0041] A step of polarization treatment is effected in which the film is disposed in silicone oil and a voltage in the form of triangular waves or pulses of an amplitude of 120 MV/m and a frequency of 50 mHz is applied in 5 periods or more directly across the electrodes layered on the film

    [0042] Table 1 below is a comparative table showing in numerical value the tensile strengths, breaking strains and elastic moduli of piezoelectric films which embody the invention (products of invention 1 and 2) comparatively with the tensile strengths, breaking strains and elastic moduli of piezoelectric films which are comparative examples in the prior art (comparative products 1 and 2).

    [0043] From Table 1, it is seen that the piezoelectric films of the products of invention 1 and 2 of which the molecular weights are not less than 600,000 (/mol) have a tensile strength of about 40 MPa and have breaking strains or distortions of 20 to 50% and 10 to 40%, respectively, on the one hand. On the other hand, it is seen that the piezoelectric films of the comparative products 1 and 2 of which the molecular weights are 352,000 (/mol) or less have a tensile strength of about 40 MPa and a breaking distortion or strain of 5 to 15% and 3 to 7%, respectively, making it manifest that the piezoelectric films of the products of invention 1 and 2 are higher in value of breaking strain than, and superior in distortion or deformation resistance to, those of the comparative products.

    TABLE-US-00001 TABLE 1 Molec- Residual ular Polar- Coercive Break- Elastic Weight ization Electric Tensile ing Mod- MW Nr Field Strength Strain ulus [/mol] [Mc/m.sup.2] [Mv/m] [MPa] [%] [GPa] Product 680,000 89.3 39.6 about 20-50 about of 40 3 Invention 1 Product 602,000 90.4 38.7 about 10-40 about of 40 3 Invention 2 Comp- 352,000 82.1 38.5 about 5-15 about arative 40 3 Product 1 Comp- 350,000 un- un- about 3-7 about arative assessed assessed 40 3 Product 2 Note that the ratio of molar % of VDF/TrFE is set at 85/15.

    [0044] FIG. 2 is a graph showing a relation of 1 stress (MPa) versus a strain or distortion (%) of a piezoelectric film P [VDF/TrFE]. It is seen that the greater the molecular weight, the larger is the breaking strain, and the larger the tensile strength, the higher is the distortion resistance. It has been found that two samples of a molecular weight of not less than 600,00 (/mol) has a breaking strain or distortion of 18% or more and has a distortion resistance of more than twice as much as that of 8% of two samples having a molecular weight of 350,000 (/mol).

    Example 3

    [0045] FIG. 3 shows thermal characteristics of piezoelectric film (P [VDF/TrFE]) samples with varied compounding ratios. In FIG. 3, it is indicated that for the piezoelectric film samples whose VDF/TrFE proportions are 59/41, 75/25 and 81/19, there exist endothermic peaks corresponding to Curie points at temperatures of 141? C. or less, on the one hand.

    [0046] Note the term Curie point refers to a temperature at which a ferroelectric phase that exhibits piezoelectricity is transformed into a paraelectric phase that exhibits no piezoelectricity.

    [0047] On the other hand, it is indicated for the two samples whose VDF/TrFE proportions are 85/15, there is no endothermic peak corresponding to their Curie point of 159? C. that is their melting point. Consequently, it has been confirmed that the specimen of the piezoelectric film whose VDF/TrFE proportion is 85/15 is extremely good in heat resistance at high temperatures.

    [0048] FIG. 4 shows comparative data of the Curie point as a measure of heat resistance of a piezoelectric film specimen whose VDF/TrFE proportion is 85/15 (higher molecular weight) and heat resistance of a piezoelectric film specimen whose VDF/TrFE proportion is 75/25. It has been confirmed that the 85/15 (higher molecular weight) crystallized film specimen is better in heat resistance by 30? C. or more than the 75/25 crystallized film specimen.

    Example 4

    [0049] Table 2 below is a comparative table showing the piezoelectric properties and heat resistances (here Curie points) of a specimen of piezoelectric film whose VDF/TrFE proportion is 85/15 (of higher molecular weight, a product of invention 3) and a specimen of piezoelectric film whose VDF/TrFE proportion is 75/25 (comparative products 3, 4, 5). With respect to heat resistance, it is seen on the one hand that the product of invention 3 is of 156? C. and superior to the comparative products 3, 4 and 5 which are of 120? C. to 130? C.

    [0050] On the other hand, with respect to the piezoelectricity, it is seen that the product of invention 3 is equal to the comparative products 3, 4 and 5.

    TABLE-US-00002 TABLE 2 Electro- Electro- Molar Distor- mechanical mechanical Heat Fraction tion Coupling Coupling Resistance Of VDF Resis- Coefficient Coefficient (Curie (%) tance K33 K31 Point) Product of 85 Very 0.28 0.08 156? C. Invention 3 good Comparative 75 Not 0.3 0.06 120? C. Product 3 good Comparative 75 Not 0.3 0.06 120? C. Product 4 good Comparative 81 Good 0.24 0.08 130? C. Product 5

    INDUSTRIAL APPLICABILITY OF THE INVENTION

    [0051] According to the present invention, it is made possible to provide a piezoelectric film and a method of its making, the piezoelectric film being superior in heat resistant and distortion or deformation resistant properties to those in the prior art. It is made thereby possible to apply the piezoelectric film to its industrial uses and to applications in the automotive industry (a specific example of which includes disposing a piezoelectric film of the present invention on an inner surface of a tyre to measure a stress applied thereto), thereby contributing to development of the industries.