Laser reseal including an additional layer and alloy formation
09919919 ยท 2018-03-20
Assignee
Inventors
- Jens Frey (Filderstadt, DE)
- Jochen Reinmuth (Reutlingen, DE)
- Mawuli Ametowobla (Stuttgart, DE)
- Philip Kappe (Hildesheim, DE)
Cpc classification
B81C1/00293
PERFORMING OPERATIONS; TRANSPORTING
B81B7/0077
PERFORMING OPERATIONS; TRANSPORTING
B81C2203/0145
PERFORMING OPERATIONS; TRANSPORTING
B81C2203/0136
PERFORMING OPERATIONS; TRANSPORTING
International classification
Abstract
A method for manufacturing a micromechanical component including a substrate and a cap, which is connected to the substrate and, together with the substrate, encloses a cavity, a pressure prevailing and gas mixture having a chemical composition being enclosed in the cavity. An access opening connecting the to surroundings of the micromechanical component is formed in the substrate or in the cap. The pressure and/or chemical composition are/is adjusted in the cavity. The access opening is sealed by introducing energy or heat into an absorbing part of the substrate or of the cap with the aid of a laser. A layer is deposited on or grown on a surface of the substrate or of the cap in the area of the access opening for mixing with a material area of the substrate or of the cap, which is converted into a liquid aggregate state.
Claims
1. A micromechanical component, comprising: a substrate; a cap connected to the substrate, the cap, together with the substrate, enclosing a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity, the substrate or the cap including a sealed access opening; and a layer deposited on or grown on a surface of the substrate or of the cap in the area of the access opening, which is at least partially mixed with a material area of the substrate or of the cap, which is converted into a liquid aggregate state during the sealing of the access opening.
2. The micromechanical component as recited in claim 1, wherein the layer is situated on a surface of the substrate or of the cap, which faces away from the first cavity.
3. The micromechanical component as recited in claim 1, wherein a melting temperature of the layer is lower than at least one of: a melting temperature of the material area, a melting temperature of the substrate, and a melting temperature of the cap.
4. The micromechanical component as recited in claim 3, wherein a melting temperature of a mixed material including at least partially the layer and at least partially the material area is lower than at least one of: the melting temperature of the layer, the melting temperature of the material area, the melting temperature of the substrate, and the melting temperature of the cap.
5. The micromechanical component as recited in claim 1, wherein an expansion coefficient of the layer is lower than at least one of: an expansion coefficient of the material area, an expansion coefficient of the substrate, and an expansion coefficient of the cap.
6. The micromechanical component as recited in claim 5, wherein the cap, together with the substrate, enclose a second cavity, a second pressure prevailing and a second gas mixture having a second chemical composition being enclosed in the second cavity.
7. The micromechanical component claim 6, wherein the first pressure is lower than the second pressure, a first sensor unit for rotation rate measurement being situated in the first cavity and a second sensor unit for acceleration measurement being situated in the second cavity.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS
(4) Identical parts are denoted by the same reference numerals in the various figures and are therefore generally also cited or mentioned only once.
(5)
(6) For example, a first pressure prevails in first cavity 5, in particular when access opening 11 is sealed, as shown in
(7) It is provided, for example, that the first pressure in first cavity 5 is lower than the second pressure in the second cavity.
(8) It is also provided, for example, that a first micromechanical sensor unit for rotation rate measurement, which is not shown in
(9)
(10) Chronologically after third method step 103, it is possible for mechanical stresses to occur in a lateral area 15, shown by way of example in
(11) As shown in
(12) It is also provided, for example, that in addition, in fourth method step 104, an additional layer or a plurality of additional layers is deposited on or grown on the surface of substrate 3 or of cap 7 or of the MEMS substrate (or of another type of encapsulation layer of a MEMS structure) in the area of access opening 11 for mixing together with a material area 13 of substrate 3 or of cap 7, which is converted into a liquid aggregate state in third method step 103.
(13) Furthermore, it is provided, for example, that in first method step 101, the access opening or the narrow access channel to the MEMS cavity is created or formed in substrate 3 or in cap 7 or in the cap wafer or in the sensor wafer as well as in the layer or through the layer. Moreover, it is provided, for example that the area around the access channel is preferably locally heated by a laser and the access channel is hermetically sealed.
(14) By selecting the material of the layer or of the additional layer or of the plurality of additional layers and subsequently mixing the layer or the additional layer or the plurality of additional layers with material area 13, it is thus possible to influence the properties of the mixed material in a targeted manner. A reduction of the crack formation by one or multiple of the following effects, as well as additional effects not listed, may be achieved in a fourth method step 104, for example. Effects, which reduce, for example, the tensile stress in the system: The solidification temperature in many mixed systems is often lower than in pure systems. The mixture of substrate material with a second material may therefore reduce the solidification temperature. In such systems, in which the temperature expansion coefficient is virtually identical, less stress accumulates as a result of the lower temperature difference between the melted area and the surroundings. A mixed system may be used, which has an anomaly during solidification. That is, the material expands during solidification, as happens, for example, when water freezes. A second material may be used or another mixed material, which has a lower thermal expansion coefficient than the substrate material. A second material may be used, which crystallizes in the mixture with the substrate material during solidification in a crystalline structure, which reacts to the crystalline orientation of the substrate material and preferably crystallizes with compression stress. The mixed material including at least partially material area 13 and at least partially the layer or the new mixed material is more easily deformable and, with an inelastic deformation, may react better than the substrate material to the stress, which is induced by the solidification process and the local cooling. The mixed material or the new sealing material (mixture of the two materials) has a higher mechanical robustness. The fracture resistance of the mixed material is higher than the fracture resistance of the substrate material due to an elastic modulus of the mixed materials, which differs from the elastic modulus of the substrate material. The new mixed material is more easily plastically deformable and thus may react with a deformation to a stress applied from outside or to a tension applied from the outside. The material or the mixed material is less sensitive to crack formation due to its altered crystalline structure, in particular, micro-cracks are unable to propagate and result in a rupturing of the entire sealing area.
(15) Furthermore, it is provided according to the present invention that the micromechanical component includes the mixed material, which includes at least partially the layer and at least partially the material area in the sealing area or in the area of sealed access opening 11. In other words, it is provided, for example, that the substrate material or the cap material and the additional material or the layer material (or the material of the layer) are at least partially mixed in the sealing area or in the area of sealed access opening 11.
(16) In such case, it is provided, for example, that the layer material or the material of the additional layer includes a lower melting point than the substrate material or the cap material. The melting point of pure germanium (Ge), for example, is 937 C. and the melting point of silicon (Si) is 1410 C. The melting point of the SiGe mixed crystal lies between the melting points of germanium and silicon and may be adjusted via the Si ratio and Ge ratio.
(17) Moreover, it is provided, for example, that the mixed material has a lower melting point than the two materials individually or than the layer material, and lower than the substrate material or the cap material. It is provided, in particular, that the melting temperature of the mixed material is adjusted with the aid of a combination of Si and aluminum or Al or Si and gold or Au.
(18) In addition, it is provided according to the present invention that the mixed material or the mixed system and/or the layer material and/or the substrate material or the cap material exhibits an anomaly during solidification. It is provided, in particular, that the substrate and/or the cap includes silicon.
(19) Furthermore, it is provided that the layer material or the mixed material has a lower thermal expansion coefficient than the substrate material or the cap material.
(20) Moreover, it is provided, for example, that the mixed material or a second material, which crystallizes in mixture with the substrate material or with the cap material during solidification in a crystalline structure, which reacts to the crystalline orientation of the substrate material or of the cap material in such a way that the mixed material or the second material in mixture with the substrate material or in mixture with the cap material crystallizes preferably with compression stress, for example, if a coherent lattice distortion exists. It is provided, for example, that the layer includes a Ge layer or a SiGe layer or another layer, which contains Ge. The lattice constant of Ge in such a case is 5.646 as compared to Si with 5.431 . A lattice distortion or a lattice constant of a mixed crystal results, for example, from the mixture ratio via Vegard's Law in a (Si.sub.1-xGe.sub.x)=a.sub.si+x(a.sub.Gea.sub.si), a (Si.sub.1-xGe.sub.x) being the lattice constant of the resulting Si.sub.1-xGe.sub.x mixed crystal, a.sub.si and a.sub.Ge being the lattice constants of Si and Ge and x being the percentage of the component Ge. It is also provided, for example, that the layer includes one element or multiple elements, which assume intermediate lattice positions in the mixed material or gaps in the crystal lattice of the mixed material for producing lattice distortions in the mixed material.
(21) It is further provided, for example, that a layer material is used, which is more easily deformable. It is provided, for example, that the layer material or the mixed material exhibits a more inelastic deformation behavior than the substrate material or than the cap material. In other words, the layer material or the mixed material may react more inelastically than the substrate material or the cap material, for example, to tensions present or to active forces or to forces acting on micromechanical component 1. It is provided in particular in such case, for example, that the mixed material or the mixture of layer material and substrate material or the mixture of layer material and cap material exhibits a more inelastic deformation behavior than the substrate material or than the cap material. The layer material includes, for example, aluminum or Al and/or gold or Au.
(22) In addition, it is provided, for example, that the elastic modulus of the layer or of the mixed material differs essentially by more than 15% from the elastic modulus of the substrate material or of the cap material. In addition, it is alternatively provided, for example, that the elastic modulus of the layer or of the mixed material is 1.15 times, in particular, more than 1.15 times, or 0.85 times, in particular, less than 0.85 times, the elastic modulus of the substrate material or of the cap material.
(23) Furthermore, it is provided, for example, that the layer or the mixed material is inelastically, in particular, plastically or at least partially plastically and/or elastoplastically and/or plastoelastically deformable or may react inelastically during the solidification process or cooling process.
(24) Moreover, it is provided that the mixed material includes a homogenous phase, in particular, in the liquid aggregate state. In addition, it is provided, for example, that the mixed material includes at least two, in particular, three, four, five, six, seven, eight or more than eight phases, in particular, in the solid aggregate state. In other words, it is provided, for example, to use a mixed system of layer material or additional layer and substrate material or cap material, which is homogenously mixed in the melted state and which becomes partially separated again or is split into multiple phases before, during or after solidification or partial solidification and cooling. It is provided in such case, for example, that at least one phase of the phases in the solid aggregate state of the mixed material or one of the two materials or interfaces between two phases of the phases or the interface of the materials inhibits the propagation of, for example, micro-cracks or exhibits increased resistance to crack formation compared to the related art.
(25) Finally, it is provided that the layer material or the second material includes a material which, in particular, in the liquid aggregate state, is completely mixable with silicon, in particular, in the liquid aggregate state and solidifies as a mixed crystal. It is also provided, for example, that a liquid phase of a layer material or of a second material and silicon solidifies as a mixed crystal. The layer material or the mixed material includes, for example, in particular, in the solid aggregate phase, a Si.sub.xGe.sub.1-x-mixed crystal. This is advantageous, in particular, if the mixed material or the mixed system solidifies with a lower tensile stress than the pure material or the layer material or the substrate material or the cap material.