Film for semiconductor package, semiconductor package using film and display device including the same
09922891 ยท 2018-03-20
Assignee
Inventors
- Soyoung LIM (Hwaseong-si, KR)
- Jaemin Jung (Seoul, KR)
- Jeong-Kyu HA (Hwaseong-si, KR)
- Donghan Kim (Osan-si, KR)
Cpc classification
H01L2224/32225
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2224/73204
ELECTRICITY
G09G5/003
PHYSICS
H01L2224/1415
ELECTRICITY
H01L2224/16235
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L22/32
ELECTRICITY
H01L2224/16238
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L23/49811
ELECTRICITY
H01L2224/73204
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L23/49827
ELECTRICITY
H01L2224/16157
ELECTRICITY
International classification
H01L23/58
ELECTRICITY
H01L23/498
ELECTRICITY
Abstract
A semiconductor package may include a first output test pad and a second output test pad disposed on a first surface of an insulating film, and a semiconductor chip disposed between the first output test pad and the second output test pad on a second surface opposing to the first surface of the insulating film.
Claims
1. A semiconductor package comprising: a substrate; a semiconductor chip disposed on a first surface of the substrate; a first via penetrating the substrate; a first pad disposed on the first surface of the substrate; a second pad disposed on a second surface of the substrate; a first lower lead disposed on the first surface of the substrate, and connected to the first pad and to the first via; an upper lead disposed on the second surface of the substrate, and connected to the second pad and to the first via; and a transmission lead disposed on the second surface of the substrate and connected to the first via, wherein the transmission lead extends from the first via in a first direction opposite to a second direction in which the upper lead extends from the first via.
2. The semiconductor package of claim 1, further comprising a resist layer disposed on the second surface of the substrate, and covering the upper lead and the transmission lead.
3. The semiconductor package of claim 1, further comprising a resin layer disposed between the semiconductor chip and the substrate, and covering the first pad.
4. The semiconductor package of claim 1, further comprising: a second via penetrating the substrate; a third pad disposed on the first surface of the substrate; a fourth pad disposed on the second surface of the substrate and connected to the second via; and a second lower lead connected to the third pad and the second via.
5. The semiconductor package of claim 1, further comprising a bump contacting the first pad.
6. The semiconductor package of claim 1, wherein the first via, the transmission lead and the upper lead form a T-shape.
7. The semiconductor package of claim 1, wherein the substrate is a flexible film that includes a polyimide or an epoxy-based resin.
8. The semiconductor package of claim 7, wherein a distal end of the transmission lead is exposed at one sidewall of the substrate of the semiconductor package.
9. A semiconductor package comprising: a substrate; a semiconductor chip disposed on the substrate; a plurality of vias penetrating the substrate, and including a first via and a second via; a plurality of lower pads disposed on a first surface of the substrate, and including a first lower pad and a second lower pad; a plurality of upper pads disposed on a second surface of the substrate, and including a first upper pad and a second upper pad; a plurality of lower leads disposed on the first surface of the substrate, and including a first lower lead and a second lower lead, the first lower lead being connected to the first via and the first lower pad, the second lower lead being connected to the second via; a plurality of upper leads disposed on the second surface of the substrate, and including a first upper lead and a second upper lead, the first upper lead being connected to the first upper pad, the second upper lead being connected to the second via and the second upper pad; and a plurality of transmission leads disposed on the second surface of the substrate, and including a first transmission lead and a second transmission lead, the first transmission lead being connected to the first via, the second transmission lead being connected to the second via, wherein the plurality of transmission leads extend from the first via in a first direction that is different from a second direction in which the plurality of upper leads extend from the first via, and a distance between a distal end of the first transmission lead and a distal end of the second transmission lead is greater than a distance between a proximal end of the first transmission lead and a proximal end of the second transmission lead.
10. The semiconductor package of claim 9, wherein the first direction is opposite to the second direction.
11. The semiconductor package of claim 9, wherein a distance between a distal end of the first upper lead and a distal end of the second upper lead is greater than a distance between a proximal end of the first upper lead and a proximal end of the second upper lead.
12. The semiconductor package of claim 9, wherein a distance between a distal end of the first lower lead and a distal end of the second lower lead is greater than a distance between a proximal end of the first lower lead and a proximal end of the second lower lead.
13. The semiconductor package of claim 9, wherein a portion of the substrate is bent.
14. The semiconductor package of claim 9, wherein a distal end of each of the plurality of transmission leads is exposed at one sidewall of the substrate.
15. The semiconductor package of claim 9, wherein the substrate is a flexible film.
16. A display device comprising: a panel; and a semiconductor package including: a substrate; a semiconductor chip disposed on a first surface of the substrate; a via penetrating the substrate; a first pad disposed on the first surface of the substrate; a second pad disposed on a second surface of the substrate; a lower lead disposed on the first surface of the substrate, and connected to the first pad and to the via; an upper lead disposed on the second surface of the substrate, and connected to the second pad and to the via; and a transmission lead disposed on the second surface of the substrate and connected to the via, the transmission lead extending in a first direction opposite to a second direction in which the upper lead extends, wherein the panel is disposed on the second surface of the substrate of the semiconductor package, and wherein a portion of the substrate of the semiconductor package is bent such that at least a portion of an upper surface of the panel and at least a portion of a lower surface of the panel are disposed on the second surface of the substrate of the semiconductor package.
17. The display device of claim 16, wherein the semiconductor package includes a bump contacting a first pad.
18. The display device of claim 16, further comprising a circuit substrate, wherein the semiconductor package electrically connects the circuit substrate and the panel.
19. The display device of claim 16, wherein the semiconductor chip is a display driver integrated circuit (DDI).
20. The display device of claim 16, wherein a distal end of the transmission lead is exposed at one sidewall of the substrate of the semiconductor package.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The inventive concepts will become more apparent in view of the attached drawings and accompanying detailed description.
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DETAILED DESCRIPTION OF THE EMBODIMENTS
(12) The inventive concepts will now be described more fully hereinafter with reference to the accompanying drawings, in which example embodiments of the inventive concepts are shown. The advantages and features of the inventive concepts and methods of achieving them will be apparent from the following example embodiments that will be described in more detail with reference to the accompanying drawings. It should be noted, however, that the inventive concepts are not limited to the following example embodiments, and may be implemented in various forms. Accordingly, the example embodiments are provided only to disclose the inventive concepts and let those skilled in the art know the category of the inventive concepts. In the drawings, example embodiments of the inventive concepts are not limited to the specific examples provided herein and are exaggerated for clarity.
(13) The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used herein, the singular terms a, an and the are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being connected or coupled to another element, it may be directly connected or coupled to the other element or intervening elements may be present.
(14) Similarly, it will be understood that when an element such as a layer, region or substrate is referred to as being on another element, it can be directly on the other element or intervening elements may be present. In contrast, the term directly means that there are no intervening elements. It will be further understood that the terms comprises, comprising,, includes and/or including, when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
(15) Additionally, the example embodiment in the detailed description will be described with sectional views as ideal exemplary views of the inventive concepts. Accordingly, shapes of the exemplary views may be modified according to manufacturing techniques and/or allowable errors. Therefore, the example embodiments of the inventive concepts are not limited to the specific shape illustrated in the exemplary views, but may include other shapes that may be created according to manufacturing processes. Areas exemplified in the drawings have general properties, and are used to illustrate specific shapes of elements. Thus, this should not be construed as limited to the scope of the inventive concepts.
(16) It will be also understood that although the terms first, second, third etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element in some embodiments could be termed a second element in other embodiments without departing from the teachings of the present inventive concepts. Embodiments of aspects of the present inventive concepts explained and illustrated herein include their complementary counterparts. The same reference numerals or the same reference designators denote the same elements throughout the specification.
(17)
(18) Referring to
(19) Input pads 40 may be disposed on the first surface 11 of the insulating film 10. The input pads 40 may extend in a first direction X parallel to the first surface 11 of the insulating film 10 so as to be disposed on both the insulating film 10 of the input region IS and the insulating film 10 of the first test region TS1. The input pads 40 may be arranged in a second direction Y crossing the first direction X. Each of the input pads 40 may include a first input pad 40a and a second input pad 40b. The first input pads 40a may be disposed in the input region IS, and the second input pads 40b may be disposed in the first test region TS1.
(20) Vias 31, 33 and 35 may penetrate the insulating film 10. In example embodiments, input vias 31 may be disposed in the first test region TS1 of the insulating film 10. First output vias 33 may be disposed in the chip region CS of the insulating film 10, and second output vias 35 may be disposed in the output region OS of the insulating film 10. The input vias 31 may be disposed to correspond to the input pads 40, respectively. The input vias 31 may be connected to the input pads 40 in one-to-one correspondence. The input pads 31 may be arranged in the second direction Y. The first output vias 33 may be arranged in the second direction Y in the chip region CS. The second output vias 35 may be disposed to respectively correspond to second output pads 42 disposed on the second surface 13 of the insulating film 10. The second output vias 35 may be connected to the second output pads 42 in one-to-one correspondence. The second output vias 35 may be arranged in the second direction Y.
(21) Input leads 21, first output lower leads 23, and second output leads 27 may be disposed on the first surface 11 of the insulating film 10. The input leads 21 may be disposed in the input region IS of the insulating film 10. The input leads 21 may extend in the first direction X so as to be connected to the input pads 40 in one-to-one correspondence. The first output lower leads 23 may be disposed in the chip region CS of the insulating film 10. The first output lower leads 23 may extend in the first direction X so as to be connected to the first output vias 33 in one-to-one correspondence. The second output leads 27 may be disposed in the output region OS of the insulating film 10. The second output leads 27 may extend in the first direction X so as to be connected to the second output vias 35 in one-to-one correspondence.
(22) In the chip region CS, first pads 36, second pads 37, and third pads 38 may be disposed on the first surface 11 of the insulating film 10. The first pads 36 may be connected to the first output lower leads 23, respectively. The second pads 37 may be connected to the second output leads 27, respectively, and the third pads 38 may be connected to the input leads 21, respectively. The first pads 36 may be disposed between the second pads 37 and the third pads 38. The second pads 37 may be adjacent to the output region OS of the insulating film 10, and the third pads 38 may be adjacent to the input region IS of the insulating film 10. The first output vias 33 may be disposed between the second pads 37 and the third pads 38 when viewed from a plan view.
(23) The semiconductor chip 100 may be disposed on the first surface 11 of the insulating film 10 in the chip region CS. The semiconductor chip 100 may be a display driver integrated circuit (DDI). The DDI may be a semiconductor device that controls pixels of a display panel to adjust colors of an image. One surface of the semiconductor chip 100 may be adjacent to the first surface 11 of the insulating film 10. Input bumps 51, first output bumps 53, and second output bumps 55 may be disposed on the one surface of the semiconductor chip 100.
(24) The input bumps 51 may be disposed to be adjacent to the input region IS, and the second output bumps 55 may be disposed to be adjacent to the output region OS. The first output bumps 53 may be disposed between the input bumps 51 and the second output bumps 55. The input bumps 51 may be arranged in the second direction Y and may be connected to the input leads 21 in one-to-one correspondence. The input bumps 51 may be in contact with the third pads 38. The first output bumps 53 may be arranged in the second direction Y and may be connected to the first output lower leads 23 in one-to-one correspondence. The first output bumps 53 may be in contact with the first pads 36. The second output bumps 55 may be arranged in the second direction Y and may be connected to the second output leads 27 in one-to-one correspondence. The second output bumps 55 may be in contact with the second pads 37.
(25) As a result, the input leads 21 may be connected between the input pads 40 and the input bumps 51, and the first output lower leads 23 may be connected between the first output vias 33 and the first output bumps 53. The second output leads 27 may be connected between the second output vias 35 and the second output bumps 55.
(26) First output pads 41, second output pads 42, first output test pads 43, second output test pads 44, and input test pads 45 may be disposed on the second surface 13 of the insulating film 10. The first and second output pads 41 and 42 may be disposed in the output region OS of the insulating film 10. The first output pads 41 may be arranged in the second direction Y, and the second output pads 42 may also be arranged in the second direction Y. The first output pads 41 may be spaced apart from the second output pads 42. The first output pads 41 may be disposed between the chip region CS and the second output pads 42.
(27) The first output test pads 43 and the input test pads 45 may be disposed in the first test region TS1 of the insulating film 10. The first output test pads 43 may be arranged in the second direction Y, and the input test pads 45 may be arranged in the second direction Y. The first output test pads 43 may be spaced apart from the input test pads 45. The first output test pads 43 may be disposed between the input test pads 45 and the input region IS. In other words, the first output test pads 43 may be adjacent to the input region IS, and the input test pads 45 may be spaced apart from the input region IS with the first output test pads 43 interposed therebetween.
(28) The second output test pads 44 may be disposed in the second test region TS2 of the insulating film 10 and may be arranged in the second direction Y. Each of the second output test pads 44 may be in contact with a corresponding one of the second output pads 42. The second output test pad 44 and the second output pad 42 which are in contact with each other may extend in the first direction X.
(29) The input vias 31 may be disposed to respectively correspond to the input test pads 45 and may be connected to the input test pads 45 in one-to-one correspondence. Thus, the input bumps 51 may be electrically connected to the input test pads 45 through the input leads 21, the input pads 40 and the input vias 31, respectively.
(30) Each of first output upper lead 25 and each of transmission lead 29 may be connected to a corresponding one of the first output vias 33. The first output upper leads 25 may also be connected to the first output pads 41, respectively. The transmission leads 29 may also be connected to the first output test pads 43, respectively. Thus, the first output bumps 53 may be electrically connected to the first output pads 41 through the first output lower leads 23, the first output vias 33 and the first output upper leads 25, respectively. In addition, the first output bumps 53 may also be electrically connected to the first output test pads 43 through the first output lower leads 23, the first output vias 33 and the transmission leads 29, respectively.
(31) The second output vias 35 may be disposed to respectively correspond to the second output pads 42 and may be connected to the second output pads 42 in one-to-one correspondence. Thus, the second output bumps 55 may be electrically connected to the second output pads 42 through the second output leads 27 and the second output vias 35, respectively.
(32) An underfill resin layer 60 may be provided between the semiconductor chip 100 and the insulating film 10, so the input bumps 51, the first output bumps 53, and the second output bumps 55 may be covered with the underfill resin layer 60. A first resist layer 61 may be disposed on the first surface 11 of the insulating film 10 to cover the input leads 21 and the second output leads 27. A second resist layer 63 may be disposed on the second surface 13 of the insulating film 10 to cover the first output upper leads 25 and the transmission leads 29.
(33) A measurement device 200 may be provided on the second surface 13 of the insulating film 10 to test electrical characteristics of the semiconductor chip 100. The measurement device 200 may include probe parts 201. The probe parts 201 may come in contact with the first output test pads 43, the second output test pads 44, and the input test pads 45 which are disposed on the second surface 13 of the insulating film 10. A cutting process of separating chip-on-film (COF) packages from each other may be performed on the insulating film 10 after the test of the electrical characteristics. The first test region TS1 and the second test region TS2 of the insulating film 10 may be separated from the input region IS and the output region OS of the insulating film 10 by the cutting process. As a result, a semiconductor package 1000 may be formed as illustrated in
(34) According to example embodiments of the inventive concepts, the first output test pads 43, the second output test pads 44, and the input test pads 45 may be disposed on the same surface of the insulating film 10. Thus, it is possible to measure or test signal transmission characteristics and/or electrical characteristics of input and output circuits connected to the first and second output test pads 43 and 44 and the input test pads 45 at once.
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(36) Referring to
(37) Input pads 40 may be disposed on the first surface 310 of the package substrate 300. The input pads 40 may extend in a first direction X parallel to the first surface 310 of the package substrate 300 and may be disposed in the input region IS of the package substrate 300. The input pads 40 may be arranged in a second direction Y crossing the first direction X. One sidewall P1 of each of the input pads 40 may be aligned with one sidewall 301 of the package substrate 300.
(38) Output vias 33 and 35 may penetrate the package substrate 300. In detail, first output vias 33 may be disposed in the chip region CS of the package substrate 300 and may be arranged in the second direction Y. Second output vias 35 may be disposed in the output region OS of the package substrate 300. The second output vias 35 may be disposed to respectively correspond to second output pads 42 disposed on the second surface 330 of the package substrate 300 and may be connected to the second output pads 42 in one-to-one correspondence. The second output vias 35 may be arranged in the second direction Y.
(39) Input leads 21, first output lower leads 23, and second output leads 27 may be disposed on the first surface 310 of the package substrate 300. The input leads 21 may be disposed in the input region IS of the package substrate 300. The input leads 21 may extend in the first direction X so as to be connected to the input pads 40, respectively. The first output lower leads 23 may be disposed in the chip region CS of the package substrate 300. The first output lower leads 23 may extend in the first direction X so as to be connected to the first output vias 33, respectively. The second output leads 27 may be disposed in the output region OS of the package substrate 300. The second output leads 27 may extend in the first direction X so as to be connected to the second output vias 35, respectively.
(40) In the chip region CS, first pads 36, second pads 37, and third pads 38 may be disposed on the first surface 310 of the package substrate 300. The first pads 36 may be connected to the first output lower leads 23, respectively. The second pads 37 may be connected to the second output leads 27, respectively, and the third pads 38 may be connected to the input leads 21, respectively. The first pads 36 may be disposed between the second pads 37 and the third pads 38. The second pads 37 may be adjacent to the output region OS of the package substrate 300, and the third pads 38 may be adjacent to the input region IS of the package substrate 300. The first output vias 33 may be disposed between the second pads 37 and the third pads 38 when viewed from a plan view.
(41) The semiconductor chip 100 may be disposed on the package substrate 300 of the chip region CS to cover a portion of the first surface 310. The semiconductor chip 100 may be a display driver integrated circuit (DDI). The DDI may be a semiconductor device that controls pixels of a display panel to adjust colors of an image. Input bumps 51, first output bumps 53, and second output bumps 55 may be disposed on one surface of the semiconductor chip 100 which is adjacent to the first surface 310 of the package substrate 300. In other words, the input bumps 51, the first output bumps 53, and the second output bumps 55 may be disposed between the package substrate 300 and the one surface of the semiconductor chip 100. The input bumps 51 may be adjacent to the input region IS and may be arranged in the second direction Y. The input bumps 51 may be connected to the input leads 21, respectively. The input bumps 51 may be in contact with the third pads 38.
(42) The first output bumps 53 may be disposed between the input bumps 51 and the second output bumps 55. The first output bumps 53 may be arranged in the second direction Y and may be connected to the first output lower leads 23 in one-to-one correspondence. The first output bumps 53 may be in contact with the first pads 36.
(43) The second output bumps 55 may be adjacent to the output region OS. The second output bumps 55 may be arranged in the second direction Y and may be connected to the second output leads 27 in one-to-one correspondence. The second output bumps 55 may be in contact with the second pads 37.
(44) First output pads 41 and second output pads 42 may be disposed on the second surface 330 of the package substrate 300. The first output pads 41 may be disposed in the output region OS of the package substrate 300 and may be arranged in the second direction Y. The second output pads 42 may be disposed in the output region OS of the package substrate 300 and may be arranged in the second direction Y. The second output pads 42 may be spaced apart from the first output pads 41. The first output pads 41 may face the second output pads 42 in the first direction X. In other words, each of the first and second output pads 41 and 42 may constitute a row parallel to the second direction X. The first output pads 41 may be disposed between the chip region CS and the second output pads 42. In other words, the first output pads 41 may be relatively near to the chip region CS, and the second output pads 42 may be spaced apart from the chip region CS with the first output pads 41 interposed therebetween. The row number of the output pads 41 and 42 arranged in the first direction X is two in
(45) A first output upper lead 25 and a transmission lead 29 may be simultaneously connected to each of the first output vias 33. The first output upper lead 25 may extend in one direction so as to also be connected to each of the first output pads 41. The transmission lead 29 may extend in a direction opposite to the extending direction of the first output upper lead 25. Thus, an end P2 of each of the transmission leads 29 may be exposed at the one sidewall 301 of the package substrate 300. The first output bumps 53 may be electrically connected to the first output pads 41 through the first output lower leads 23, the first output vias 33 and the first output upper leads 25, respectively.
(46) The second output vias 35 may be disposed to respectively correspond to the second output pads 42 and may be connected to the second output pads 42 in one-to-one correspondence. Thus, the second output bumps 55 may be electrically connected to the second output pads 42 through the second output leads 27 and the second output vias 35, respectively.
(47) In some example embodiments, a plurality of the output pads may be disposed on the first surface 310 of the package substrate 300. The output pads may be connected to the bumps and the vias, respectively. Thus, the panel 500 may receive a lot of output signals from the semiconductor chip 100.
(48) An underfill resin layer 60 may be provided between the semiconductor chip 100 and the package substrate 300, so the input bumps 51, the first output bumps 53, and the second output bumps 55 may be covered with the underfill resin layer 60. A first resist layer 61 may be disposed on the first surface 310 of the package substrate 300 to cover the input leads 21 and the second output leads 27. The input pads 40 may be exposed by the first resist layer 61. A second resist layer 63 may be disposed on the second surface 330 of the package substrate 300 to cover the first output upper leads 25 and the transmission leads 29.
(49) The circuit substrate 400 may be disposed on the input pads 40. The input pads 40 may be in electrical contact with a substrate pad 401 of the circuit substrate 400. The panel 500 may be disposed on the first output pads 41 and the second output pads 42. The first and second output pads 41 and 42 may be in electrical contact with first and second panel pads 501 and 502 of the panel 500, respectively.
(50) In a final structure of the display device 1100, a portion of the package substrate 300 may be bent as illustrated in
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(52) The timing controller 410, a reference voltage generator 420, a power voltage generator 430, and an interface unit 440 may be mounted on the circuit board 400. The timing controller 410 may generate the data signals, the scan signals, and control signals. The reference voltage generator 420 may generate a reference voltage used to generate color signals or image signals corresponding to the data signals in the data driver 610. The data signals may be temporarily stored or latched in the data driver 610 by control signals. Thereafter, the color signals or the image signals may synchronize with the scan signal transmitted from the gate driver 620 so as to be transmitted to data lines of the panel 500. The gate driver 620 may sequentially transmit the scan signals to the gate lines of the panel 500. The power voltage generator 530 may generate a power voltage of the timing controller 410 and the gate driver 620. The power voltage may be different from the reference voltage.
(53) The semiconductor package 1000 may electrically connect the circuit substrate 400 to the panel 500.
(54)
(55) The display device 1100 according to the above embodiments of the inventive concepts may be applied to a mobile or smart phone 2000 illustrated in
(56) The semiconductor package according to example embodiments of the inventive concepts may include the input test pad, the first output test pad, and the second output test pad which are disposed on the same surface of the insulating film or the package substrate. Since the input test pad and the plurality of output test pads are disposed on the same surface, the characteristic test of the semiconductor chip may be performed at once. In other words, a test time of the semiconductor chip may be reduced.
(57) While the inventive concepts have been described with reference to example embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirits and scopes of the inventive concepts. Therefore, it should be understood that the above embodiments are not limiting, but illustrative. Thus, the scopes of the inventive concepts are to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing description.