Component Carrier Comprising a Deformation Counteracting Structure
20180070443 ยท 2018-03-08
Inventors
Cpc classification
H05K2203/0207
ELECTRICITY
H05K2203/1572
ELECTRICITY
H05K1/0271
ELECTRICITY
H05K1/185
ELECTRICITY
H05K1/115
ELECTRICITY
H05K2201/068
ELECTRICITY
International classification
H05K1/11
ELECTRICITY
Abstract
Disclosed is a device for electrically connecting components, which device has at least one electrically insulating layer structure, at least one electrically conducting layer structure, which is stacked and consolidated with the at least one electrically insulating layer structure under formation of a stack of layers, and a warpage stabilization structure for stabilizing the device in a warpage-suppressing manner, which structure at least partially pervades layer structures of the stack of layers.
Claims
1. A device for electrically connecting components, the device comprising: at least one electrically insulating layer structure; at least one electrically conducting layer structure, which is stacked and consolidated with the at least one electrically insulating layer structure under formation of a stack of layers; a warpage stabilization structure for stabilizing the device in a warpage-suppressing manner, which structure at least partially pervades at least two of the layer structures of the stack of layers, wherein the warpage stabilization structure is formed by at least one through-crossing connection, the main extension direction of which forms an acute angle with at least one main surface of the device, and wherein the at least one through-crossing connection is formed by at least two drill holes, which drill holes are connected with each other, are formed asymmetrically to each other, are displaced laterally to each other, and are at least partially filled with material.
2. The device according to claim 1, wherein the acute angle is in a range between 70 and 89, and wherein at least a portion of different ones of the plurality of through-crossing connections are arranged with different values of the acute angle with respect to the at least one main surface, and thus are not parallel to each other.
3. (canceled)
4. The device according to claim 1, wherein at least a portion of the at least one through-crossing connection is filled at least partially with an electrically conducting material wherein the electrically conducting material of the at least one through-crossing connection adjoins directly to the at least one electrically insulating layer structure at least along a portion of the extension through the device of the at least one through-crossing connection, and/or wherein at least a portion of the at least one through-crossing connection is free of material.
5. (canceled)
6. (canceled)
7. The device according to claim 1, wherein the drill holes, which are laterally offset to each other, are oriented perpendicular to at least one main surface of the device.
8. The device according to claim 1, wherein the drill holes, which are offset laterally to each other, each have substantially a circular cylindrical shape.
9. The device according to claim 1, wherein the drill holes, which are offset laterally to each other, each have substantially a conical or frustoconical shape.
10. The device according to claim 1, wherein the drill holes have a lateral offset to each other in a range between 0.5 m and 50 m.
11. The device according to claim 1, wherein the at least one through-crossing connection is integrated in the at least one electrically conducting layer structure and/or in the at least one electrically insulating layer structure with a mechanical pre-load, which counteracts a warpage force.
12. The device according to claim 1, wherein a material of the at least one electrically insulating layer structure has a greater value of the coefficient of thermal expansion than at least one of the group, which consists of: a material of the at least one electrically conducting layer structure, and a material of the at least one through-crossing connection, or wherein a material of the at least one electrically insulating layer structure has a smaller value of the coefficient of thermal expansion than at least one of the group, which consists of: a material of the at least one electrically conducting layer structure and a material of the at least one through-crossing connection.
13. (canceled)
14. The device according to claim 1, wherein at least a portion of the at least one through-crossing connection is formed as a through-contacting, which completely pervades the device in a stacking direction of the stack of layers, or as a contacting, which only precisely at least partially pervades the device in a stacking direction of the stack of layers.
15. The device according to claim 1, wherein at least one electronic component is embedded in the at least one electrically insulating layer structure and/or in the at least one electrically conducting layer structure, wherein the at least one electronic component is selected from a group, which consists of: an active electronic component, a passive electronic component, a data storage device, a filter device, an integrated circuit, a signal processing component, a power management component, an optical-electrical interface element, a voltage converter, a cryptographic component, a capacitance, a resistance, a transmission and/or receiving unit, an electromechanical transducer, an inductance, a switch, a microelectromechanical system, a battery, a camera and an antenna.
16. (canceled)
17. The device according to claim 1, wherein a number of through-crossing connections per area of a main surface of the device is in a range between 50 mm.sup.2 and 1000 mm.sup.2, and/or wherein a mean distance between neighboring through-crossing connections at a main surface of the device is in a range between 30 m and 200 m.
18. (canceled)
19. The device according to claim 1, wherein the electrically insulating layer structure has a material from a group, which consists of: resin, bismaleimide-triazine resin, cyanate ester, glass, glass fibres, prepreg material, polyimide, a liquid crystal polymer, epoxide-based build-up film, FR4 material, a ceramic, and a metal oxide.
20. The device according to claim 1, wherein the at least one electrically conducting layer structure has copper.
21. The device according to claim 1, formed as a conductor board or as a substrate.
22. A method for fabricating a device for electrically connecting components, the method comprising: stacking and consolidating at least one electrically conducting layer structure with at least one electrically insulating layer structure under formation of a stack of layers; forming a warpage stabilization structure for stabilizing the device in a warpage-suppressing manner, which at least partially pervades at least two of the layer structures of the stack of layers, wherein the warpage stabilization structure is formed by at least one through-crossing connection, the main extension direction of which is formed to draw an acute angle with at least one main surface of the device, and wherein the at least one through-crossing connection is formed by drilling twice, starting from the two mutually opposite main surfaces of the device.
23. The method according to claim 22, wherein a breaking through of the at least one electrically insulating layer structure for forming the at least one through-crossing connection is effected by ion bombardment, chemical etching, mechanical drilling or laser drilling.
24. The method according to claim 22, wherein during the fabrication of the at least one through-crossing connection in the at least one electrically conducting structure and/or in the at least one electrically insulating layer structure, the at least one through-crossing connection is integrated in the material of the device, which surrounds the through-crossing connection, with a mechanical pre-load which counteracts a warpage force, wherein the mechanical pre-load is produced by adjusting a temperature during the formation of the at least one through-crossing connection higher than a temperature during the processing of the at least one electrically insulating layer structure and/or of the at least one electrically conducting layer structure, wherein advantageously a material of the at least one electrically insulating layer structure is selected with a smaller value of the coefficient of thermal expansion than at least one of the group, which consists of: a material of the at least electrically conducting layer structure and a material of the at least one through-crossing connection.
25. (canceled)
26. (canceled)
27. The method according to claim 24, wherein the mechanical pre-load is generated by adjusting a temperature during the formation of the at least one through-crossing connection lower than a temperature during the processing of the at least one electrically insulating layer structure and/or of the at least one electrically conducting layer structure, wherein a material of the at least one electrically insulating layer structure is selected with a greater value of the coefficient of thermal expansion than at least one of the group, which consists of: a material of the at least one electrically conducting layer structure and a material of the at least one through-crossing connection.
28. (canceled)
29. The method according to claim 24, wherein the mechanical pre-load is produced or enhanced by exposing the device, after the formation of the at least one through-crossing connection and after the processing of the at least one electrically insulating layer structure and/or of the at least one electrically conducting layer structure, to a temporary increase of temperature, whereby an adaptation of the materials of the device to each other and a build-up of a mechanical bracketing tension is effected.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0043] In the following, exemplary embodiments of the present invention are described with reference to the following drawings.
[0044]
[0045]
[0046]
[0047]
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
[0048] Same or similar components in different figures are provided with same reference numerals.
[0049] Before exemplary embodiments of the invention are described with reference to the figures, some general aspects of the invention shall still be explained.
[0050] Conductor boards may experience a certain degree of warping in the framework of their own manufacturing process and/or in the subsequent component placement process. This may be caused by the different values of the coefficient of thermal expansion (CTE values) of the involved materials, by the mechanical wear (or load) and/or by the hardening and drying processes during the processing. In the simplest case, this warping may be a property change of the equipped conductor board in the sense of quality assurance, but may possibly lead to a functional failure of the whole conductor board. Manufacturers of conductor boards have tried for a long time to reduce and to minimize the warpage (or deformation).
[0051] It is further known that through-contactings and vias in a conductor board may be fabricated at a right angle (z-axis) with respect to the conductor plate (xy-plane).
[0052] It is further known that in the construction industry special constructions and solidity can be reached by reinforced concrete. Therein, tensile stresses may be built up with respect to the pressure resistant carrier construction by embedded systems. It is also known from the construction industry that a pre-load of a cable can be achieved belatedly by embedding tensioning cables in a guiding bushing and by tensioning them belatedly.
[0053] By special techniques, it may be possible for a conductor board to fabricate a through-contacting which may not extend precisely perpendicular to the plane of the conductor board. Further, particular forms (or implementations) of through-contactings may be possible, in which the engaging (or charging) forces may correspond substantially to an inclined through-contacting, that is, a force-equivalent system to an inclined through-contacting can be built up also from offsetted perpendicular components of a through-contacting.
[0054] It has been found surprisingly that by skilful dimensioning the diameter of the through-contacting (tensioning cable as an analogon to the reinforced concrete) with respect to the surrounding insulation layer (for example FR4, which may correspond to the concrete in the analogon of reinforced concrete), a similar effect can be achieved in the interior of a conductor board. Systems with partial pre-load can also be manufactured as a function of the dimensioning. The mechanical tensions may be dimensioned specifically such that they may counteract a warpage during the manufacture.
[0055] It was found further that such tensions can be built up and controlled by basically different mechanisms:
[0056] Group A: If the CTE of the insulation (i.e. the electrically insulating layer structures) is smaller than the CTE of the conductor (i.e. the electrically conducting layer structures), such as for example in the combination glass/copper.
[0057] 1) Because the through-contacting may be effected at a higher temperature than the belated averages of the operational temperature, a basic tension can be built up selectively along a desired trajectory in the conductor board. This may arise because the CTE of copper may be higher than that of the insulation.
[0058] 2) In the framework of a curing process (or a post-curing process) of the FR4, the layer structures may be heated up to a specific degree. Thereby, the copper with its large CTE may expand relatively strong. In this expanded state, the FR4 material/the prepreg and/or other insulations may adapt to the new mechanical spatial conditions of the expanded copper. The subsequent cooling down of the resin, which may now be cured, may result in a build-up of a bracketing tension (or clamping tension) by the copper, which may contract more than the insulation material during the cooling down.
[0059] 3) A normally fabricated through-contacting may be heated up during a heating process of the whole conductor board (this heating process may be an after-curing of the basic material during particular process steps, and may also occur in the framework of the proper reflow soldering process). Because the copper may extend stronger than the surrounding insulator due to its larger CTE, a delamination tension may be built up first (i.e. a mechanical tension which tries to pull apart the layers of the conductor board assembly in an essentially vertical direction). By a proper dimensioning of the hole size and the wall thickness of the copper filling (up to a complete filling), a point may be found, where copper may arrive at its limit of elasticity by the keeping-together forces of the insulation layer (in particular very large for glass) and may deform plastically (i.e. is stretched). For copper (and at best minimal alloying additions), this point can be planned between 40 MPa and 300 MPa. The subsequent cooling down may lead to a build-up of a mechanical tension and can be planned such that these forces counteract a warpage.
[0060] Group B: If the CTE of the insulation is greater than the CTE of the conductor (for example certain FR4 materials, wherein the CTE in the x/y direction is different than in the z direction)
[0061] 1) Because the through-contacting may be effected at a lower temperature than the belated averages of the operational temperature or the increased temperatures in the reflow process, a basic tension can be built up along a prescribable line. This may arise because the CTE of copper may be lower than that of FR4 and/or other insulators.
[0062] 2) By the build-up of a partial pre-load in the framework of the curing process of, for example, FR4 it may also be possible to condition a controlled warpage prior to the reflow soldering. The subsequent reflow process may then result in fewer warpages due the partial pre-load.
[0063] 3) The drill holes can be placed such that the temperature increase during the reflow process may result in a tension and thus in a controlled stiffening of the conductor board. After the cooling down, the properties of the conductor boards may be as without these stiffenings, i.e. this process may also be suitable for corresponding flexible conductor boards as long as the elasticity of the flexible portion is given only at low temperatures. Insulation materials having a temperature-dependent variable module of elasticity may be applied herein.
[0064] One embodiment example may consist in the provision of at least one inclined (or oblique) drill hole. As a variant to this, it may be possible to provide only through-contactings or also filled through-contactings. It may be possible to provide a via, which may end at a main surface of the conductor board, and/or a buried via as a warpage stabilization structure. The providing of a warpage stabilization structure can be performed at a point in time, when the embedding has already taken place, is just taking place, or will still take place. An insulator may be a part of a substrate, and herein the material may also be glass. Another embodiment example may relate to plural through-contactings, which may extend along different directions and/or main extension directions. Still another embodiment example may relate to two blind holes (which may be preferably connected with each other in the interior of the conductor board), which may extend into the interior starting from the opposite sides of a conductor board (printed circuit board, PCB). Another embodiment example may provide conical drill holes. Still another embodiment example may relate to frustums (or truncated cones) as the mutually contacting elements, also with different angles of the inclined edges or further asymmetries. A filling of the through-contactings with a material having a particular CTE value may be possible, whereby an even more specific reacting to a temperature change can be achieved (for example aluminium).
[0065] For example, in one embodiment example of the method, a drilling of holes in the conductor board may be effected firstly, followed by a depositing of a currentless seed layer of copper (or of another metal that is suitable for this purpose). This may be followed by a filling with electrolysis copper. The latter process can be selected such that a significantly higher temperature is adhered to (for example 80 C.). Copper as a good heat conductor can contract itself differently than the surrounding substrate, and may effect, as a warping stabilization structure, a mechanical tension in the plate, which may act to strengthen, impede warpage stabilize the substrate.
[0066] According to an embodiment example, a conductor board can be provided, which may contain at least one through-contacting, which may be oriented at a different angle than 90 degrees to the direction of the conductor board. Alternatively or supplementingly, at least one through-contacting may have an asymmetry with respect to a direct and straight-lined through-contacting.
[0067] A size of a borehole can be below 100 m (in particular below 30 m). FR4, epoxide resin, Teflon, polyamide, polyimide, cyanate ester and/or bismaleimide triazine resin, for example, may be possible as an electrically insulating base material of the conductor board, alternatively or supplementingly also glasses and glass-type carrier materials (for example multi-layer glass) as well as ceramics or metal oxides. A conductor plate according to an exemplary embodiment may contain at least one embedded component. A conductor plate according to an exemplary embodiment of the invention may have one or more through-contactings, which may result from slightly offset (in particular blind) drill holes from each side of the conductor board. For such a through-contacting, a borehole diameter may vary with the depth of the borehole (in particular in a manner so as to form a sandglass profile in cross-section). A conductor board according to an exemplary embodiment may play the role of a substrate and/or of a chip carrier. Insulation materials of a conductor board according to an exemplary embodiment of the invention may contain resins, glasses, ceramics, or metal oxides. A through-contacting may consist of copper, silver, or similar materials having a high conductance value.
[0068]
[0069] The conductor board 100 may include an electrically insulating layer structure 102 of FR4 and/or prepreg material, and may be composed of one or more layers or films that are grouted with each other. It may also be possible to provide plural electrically insulating layer structures 102. In addition to this, the conductor board may have electrically conducting layer structures 104, which may be formed as structured copper films, and which may be grouted with the electrically insulating layer structure 102 under formation of a lamination. The stack of layers, which may be composed of the electrically insulating layer structure 102 and the electrically conducting layer structure 104, may be completely pervaded in the stacking direction, which may be vertical according to
[0070] The warpage stabilization structure 106 may be formed of a plurality of through-crossing connections 108, which may be formed as vias and may be formed extending inclinedly (or obliquely), of which connections only one is shown in
[0071] The through-crossing connections 108 may be integrated in the electrically conducting layer structures 104 and in the electrically insulating layer structure 102 with a mechanical pre-load, which may counteract a warpage force.
[0072] According to
[0073]
[0074]
[0075] In the construction industry, a cable pre-load may also be achieved belatedly by loosely embedding, in concrete, tensioning cables in a guiding bushing, and tensioning them belatedly.
[0076]
[0077] According to exemplary embodiments of the invention, a through-crossing connection 108 as a warpage stabilization structure 106 may be integrated in a conductor board 100, for example inclinedly (or obliquely) or asymmetrically in another manner, in order to possibly achieve a stability of the structure and a suppression of warping tendencies in the conductor board 100. The implementation of a mechanical pre-load in the conductor board 100 can be achieved particularly effectively by an asymmetrical warping stabilization structure 106.
[0078]
[0079] According to
[0080] An electronic component 1000, for example a semiconductor chip or a block of copper, may be embedded in the electrically insulating layer structure 102, and may be connected electrically conductingly with the electrically conducting layer structure 104 at the main surface 112 of the conductor board 100 by a via 1020.
[0081] The holes 1002 and 1004 may be, but do not have to be, round holes, but may also have rectangular or rounded rectangular shapes, or may be ovals. In particular for high frequency applications, with regard to a desired propagation of electromagnetic high frequency signals along electrically conducting pathways as undisturbedly as possible to embody the geometrical shape of conductor tracks and vias as similar as possible, it may be advantageous, in particular identically. Because conductor tracks may often have a rectangular or rounded-rectangular cross-section, a corresponding shape of the vias may also be advantageous.
[0082]
[0083]
[0084]
[0085]
[0086]
[0087]
[0088]
[0089] According to
[0090] Even if the embodiment examples of the invention, which have been described with reference to the figures, may be related to conductor boards, all the aspects described for conductor boards may also be applied to substrates in a corresponding manner (with adapted dimensions, if applicable, refer to the description above), or to other component carrier devices.
[0091] Supplementarily, it should be noted that having or comprising does not exclude other elements or steps, and that a or an does not exclude a plurality. It should be noted in addition that features or steps, which have been described with reference to one of the embodiment examples above, may also be used in combination with other features or steps of other embodiment examples described above.