Method for producing structured optical components
09910273 ยท 2018-03-06
Assignee
Inventors
Cpc classification
G02B1/118
PHYSICS
G02B26/0841
PHYSICS
B29D11/00
PERFORMING OPERATIONS; TRANSPORTING
B29D11/0074
PERFORMING OPERATIONS; TRANSPORTING
B81C1/00793
PERFORMING OPERATIONS; TRANSPORTING
G02B27/0006
PHYSICS
Y10T29/49826
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
B81B2201/042
PERFORMING OPERATIONS; TRANSPORTING
International classification
G02B27/00
PHYSICS
B81C1/00
PERFORMING OPERATIONS; TRANSPORTING
G02B1/118
PHYSICS
Abstract
The method according to the invention is used for producing optical components, in particular covers for encapsulating micro-systems, wherein at least one reinforcing element, which is produced before being arranged, is arranged on a first substrate, as a result of which a stack is produced. This stack is heated after being connected to a second substrate, as a result of which the first substrate is deformed such that at least one region, covered by the reinforcing element, of the first substrate is moved and/or is inclined or the first substrate is brought into contact with the reinforcing element. In an alternative method according to the invention, the reinforcing element is arranged on the second substrate, wherein this stack is then connected to the first substrate. The first substrate is subsequently heated and deformed such that a region of the first substrate is brought into contact with the reinforcing element.
Claims
1. A method for producing optical components having the following steps: providing a first substrate (1) and a second substrate (5), providing at least one reinforcing element (4) by detaching it from a reinforcing substrate (4a), generating a stack (7) by arranging the at least one reinforcing element (4) on the first substrate (1), whereby the reinforcing element (4) covers a region of the first substrate (1), bringing the second substrate (5) into contact with the stack (7), heating and deforming the first substrate (1) such that at least a part of the region of the first substrate (1) covered by the at least one reinforcing element (4) is displaced and/or inclined, and/or a region of the first substrate (1) is brought into contact with the at least one reinforcing element (4).
2. A method for producing optical components having the following steps: providing a first substrate (1) and a second substrate (5), providing at least one reinforcing element (4) by detaching it from a reinforcing substrate (4a), generating a stack (7a) by arranging the at least one reinforcing element (4) on the second substrate (5), bringing the first substrate (1) into contact with the stack (7a), heating and deforming the first substrate (1) such that a region of the first substrate (1) is brought into contact with the at least one reinforcing element (4).
3. The method as claimed in claim 2, characterized in that the provided first substrate (1) has a further reinforcing element (4), wherein the further reinforcing element (4) covers a region of the first substrate (1) and the first substrate (1) and the further reinforcing element (4) form a further stack (7), which is brought into contact with the stack (7a) made of reinforcing element (4) and second substrate (5) during the step of bringing into contact, and wherein the heating and deforming of the first substrate (1) are additionally performed such that at least a part of the region of the first substrate (1) covered by the further reinforcing element (4) is displaced and/or inclined, and/or a region of the first substrate (1) is brought into contact with the further reinforcing element (4).
4. The method as claimed in claim 3, characterized in that the provision of the first substrate (1) with the further reinforcing element (4) is performed such that the further reinforcing element (4) is provided by detaching it from a reinforcing substrate (4a) and is arranged on the first substrate (1) and/or the further reinforcing element is provided by applying a reinforcing layer to the first substrate (1), and structuring the reinforcing layer to generate the further reinforcing element (4).
5. The method as claimed in claim 2, characterized in that the generation of the stack (7a) and its bringing into contact with the further stack (7) or the first substrate (1) are performed such that the at least one reinforcing element (4) is at least partially arranged between the first substrate (1) and the second substrate (5).
6. The method as claimed in claim 1, characterized in that the first substrate (1) contains or consists at least in partial regions of glass and/or a glasslike material.
7. The method as claimed in claim 1, characterized in that the reinforcing substrate (4a) is a plate or a wafer.
8. The method as claimed in claim 1, characterized in that the reinforcing substrate (4a), the at least one reinforcing element (4), and/or the further reinforcing element (4) contain or consist at least in partial regions of a semiconductive material.
9. The method as claimed in claim 1, characterized in that the difference of the coefficient of thermal expansion of the material of the first substrate (1) and the coefficient of thermal expansion of the material of the at least one reinforcing element (4) and/or the further reinforcing element (4) is less than or equal to 5 ppm/ K.
10. The method as claimed in claim 1, characterized in that the provision of the at least one reinforcing element (4) and/or the further reinforcing element (4) is performed by sawing, laser cutting, fracture, and/or etching.
11. The method as claimed in claim 1, characterized in that a surface region of the at least one reinforcing element and/or the further reinforcing element which is brought into contact with the first substrate, has an RMS surface roughness less than or equal to 25 nm and/or a flatness deviation less than or equal to 180 nm.
12. The method as claimed in claim 1, characterized in that the at least one reinforcing element (4) and/or the further reinforcing element (4) is arranged on a positioning means (2) before the arrangement on the first substrate (1) and/or second substrate (5).
13. The method as claimed in claim 1, characterized in that the at least one reinforcing element (4) and/or the further reinforcing element (4) has at least one fixing element (16) which, in particular after the stack (7a) is brought into contact with the further stack (7) or the stack (7, 7a) is brought into contact with the substrate (1, 5) not comprised by the stack (7, 7a), reduces or prevents displacement and/or twisting of the at least one reinforcing element (4) and/or the further reinforcing element (4) in relation to the first substrate (1) and/or in relation to the second substrate (5).
14. The method as claimed in claim 1, characterized in that one or more support structures (13) are generated, wherein the generation of the support structure (13) is performed such that the support structure (13) protects the support region (11a) of the first substrate (1) and/or functions as a spacer between the first substrate (1) and the second substrate (5).
15. The method as claimed in claim 1, characterized in that at least one reinforcing element (4) is arranged on each of the two substrate sides (1a, lb) of the first substrate (1).
16. The method as claimed in claim 1, characterized in that the arrangement of the at least one reinforcing element (4) on the first substrate (1) and/or the second substrate (5) and/or the arrangement of the further reinforcing element (4) on the first substrate (1) is performed by anodic bonding, direct bonding, plasma-activated bonding, and/or thermal bonding, and/or at least partial regions of the regions of the first substrate (1) and the reinforcing element (4) and/or the further reinforcing element (4) brought into contact with one another by the heating and deforming are connected to one another by thermal bonding.
17. The method as claimed in claim 1, characterized in that the at least one reinforcing element (4) and/or the further reinforcing element (4) is at least partially removed after the deforming.
18. The method as claimed in claim 17, characterized in that the removal of the at least one reinforcing element (4) and/or the further reinforcing element (4) is performed such that the at least one reinforcing element (4) and/or the further reinforcing element (4) is reusable.
19. The method as claimed in claim 17, characterized in that the at least one reinforcing element (4) and/or the further reinforcing element (4), at least in the region which is brought into contact with the first substrate (1), has a sacrificial layer, which is removed after the deformation of the first substrate (1) to release the reinforcing element (4) and/or the further reinforcing element (4).
20. The method as claimed in claim 1, characterized in that the first substrate (1) is provided at least in partial regions with at least one finishing coating, and/or an absorption coating, and/or functional surface structures.
21. The method as claimed in claim 20, characterized in that moth-eye structures (40) are generated as the functional surface structure such that, before the arrangement and/or the bringing into contact of the at least one reinforcing element (4) and/or the further reinforcing element (4) on/with the first substrate (1), at least the region of the at least one reinforcing element (4) and/or the further reinforcing element (4), which is brought into contact with the first substrate (1), is provided with a negative mold of the moth-eye structures (40) and, after the arrangement and/or the bringing into contact of the at least one reinforcing element (4) and/or the further reinforcing element (4) on/with the first substrate (1) during the shaping of the first substrate (1), the moth-eye structures (40) are generated on the first and/or second substrate side (1a, 1b) of the first substrate (1), in that the negative mold in the at least one reinforcing element (4) and/or the further reinforcing element (4) is molded on the first and/or second substrate side (1a, 1b) of the first substrate (1), in particular on the transmission surfaces (9) of the optical windows (8, 30, 32).
22. The method as claimed in claim 20, characterized in that the finishing coating is generated such that, before the arrangement and/or the bringing into contact of the at least one reinforcing element (4) and/or the further reinforcing element (4) on/with the first substrate (1), at least the region of the at least one reinforcing element (4) and/or the further reinforcing element (4), which is brought into contact with the first substrate (1), is provided with the finishing coating and subsequently a connection is produced between the first substrate (1) and the at least one reinforcing element (4) and/or the further reinforcing element (4) by a connection between the finishing coating and the first substrate (1), or, before the arrangement and/or the bringing into contact of the at least one reinforcing element (4) and/or the further reinforcing element (4) on/with the first substrate (1), the finishing coating is applied to the first substrate (1) and subsequently the at least one reinforcing element (4) and/or the further reinforcing element (4) is arranged and/or brought into contact on/with the finishing coating, wherein after the deformation step, the at least one reinforcing element (4) and/or the further reinforcing element (4) is at least partially removed and the finishing coating remains on the first substrate (1), in particular on the optical windows (8, 30, 32).
23. The method as claimed in claim 2, characterized in that the generation of the stack (7a) and its bringing into contact with the further stack (7) or the first substrate (1) are performed such that the at least one reinforcing element (4) is at least partially on the substrate side of the second substrate (5) facing toward the first substrate (1).
24. The method as claimed in claim 6, wherein said glass comprises borosilicate glass.
25. The method as claimed in claim 8, wherein said semiconductive material comprises silicon.
26. The method as claimed in claim 9, wherein the coefficient of thermal expansion is less than or equal to 1 ppm/ K.
27. The method as claimed in claim 11, wherein said RMS surface roughness is less than or equal to 5 nm and/or a flatness deviation less than or equal to 110 nm.
28. The method as claimed in claim 12, wherein said positioning means comprises a receptacle substrate.
29. The method as claimed in claim 20, wherein said finishing coating comprises an antistatic coating, a reflective coating and/or an absorption coating and wherein said functional surface structures comprises moth-eye structures.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(13)
(14) The inclined optical windows 8 are provided on both sides with an antireflective coating made of a layer system of silicon dioxide and titanium oxide.
(15)
(16)
(17) Furthermore, reinforcing elements 4 made of silicon, which have been sawn out of a silicon wafer 4a (
(18) To increase the position stability of the reinforcing elements 4, the reinforcing elements 4 are connected by means of anodic bonding to the glass wafer 1. An equivalent method is used with the other substrate side 1a, 1b of the glass wafer 1, so that reinforcing elements 4, which are connected to the glass wafer 1, are arranged on both substrate sides 1a, 1b of the glass wafer 1.
(19) To ensure a more stable arrangement of the reinforcing elements 4 on the glass wafer 1 before the connection, in a further variant, the reinforcing elements 4 can be transferred by means of vacuum handler 3 into a receptacle substrate 2 based on a silicon wafer, which has receptacle depressions 37 for accommodating the reinforcing elements 4. The receptacle depressions 37 in the receptacle substrate 2 are generated beforehand by means of dry-chemical etching methods and are left out such that the reinforcing elements 4 protrude beyond the delimitation surfaces 36 of the receptacle substrate 2 in their final position on the receptacle substrate 2 (
(20) As a result, reinforcing elements 4, which are connected to the glass wafer 1 (
(21) In the next method step, a further silicon wafer having third depressions 6 is provided as the at least second substrate 5 and is connected to the base stack 7, in particular to the glass wafer 1, by anodic bonding to form a layer system 12. In this case, the base stack 7 and the silicon wafer 5 are arranged in relation to one another so that the third depressions 6 in the silicon wafer 5 form, after the connection to the base stack 7, cavities 10, which are closed off hermetically sealed to the surroundings between the silicon wafer 5 and the base stack 7, which enclose the reinforcing elements 4 facing toward the silicon wafer 5. In addition, the reinforcing elements 4 are arranged non-centrally in the deflection region 21 and therefore between the support surfaces 11 or support regions 11a. A contact does not exist between the reinforcing elements 4 and the silicon wafer 5 before the heating and deforming, as
(22) The anodic bonding is performed at temperatures of approximately 400 C. and a pressure of approximately 600 mbar or approximately 800 mbar.
(23) During the following process step, the layer system 12 made of silicon wafer 5 and base stack 7 is first heated. If a glass wafer 1 made of borosilicate glass is used, having a softening temperature of approximately 820 C., the layer system 12 made of silicon wafer 5 and base stack 7 is heated to approximately 800 C. Due to the temperature, which is increased in comparison to the bonding process, the pressure in the cavities 10 increases from approximately 600 mbar to approximately 900 mbar or from approximately 800 mbar to approximately 1200 mbar. The corresponding prevailing partial vacuum or overpressure in relation to the atmospheric air pressure of the surroundings results in a force action which pulls the glass substrate 1 into the third depressions 6 of the silicon wafer 5 or presses it out of them, whereby the regions 38 of the glass wafer 1 covered by the reinforcing elements 4 are inclined, as
(24) In the last step, the reinforcing elements 4 and the silicon wafer 5 are selectively removed from the glass wafer 1 by wet chemistry (
(25)
(26) The reinforcing elements 4 are again arranged non-centrally between the support surfaces 11 or support structures 13.
(27) A substrate or tool which has third depressions 6 is used as the second substrate 5. In addition, the second substrate 5 consists of graphite or at least the counter contact surfaces 14 of the second substrate, which are provided for the contact with the base stack 7, are coated with graphite. Furthermore, this second substrate 5 having graphite has at least one channel 15, which ensures the connection of an external vacuum pump.
(28) In the next method step, the support structures 13 of the base stack 7 and the second substrate 5 having graphite are brought into contact with one another such that the third depressions 6 in the second substrate 5, after the bringing into contact with the base stack 7, form cavities 10 closed off to the surroundings between the second substrate 5 and the base stack 7, wherein the cavities 10 enclose the reinforcing elements 4, which face toward the second substrate 5, and do not have to be closed off hermetically sealed to the surroundings. A partial vacuum is generated in the cavities 10 via the channels 15 by means of external vacuum pump (
(29) The subsequent heating and deforming step is carried out as described in the previous process variant. Subsequently, ambient pressure (for example, atmospheric air pressure) is again set in the cavities 10. The base stack 7 may thus be lifted off or separated from the second substrate 5, as shown in
(30) In the final process step, the reinforcing elements 4 and the support structures 13 are removed by wet-chemical selective etching from the glass wafer 1 (
(31)
(32) In the process variants in
(33) According to
(34) To increase the position stability of the reinforcing elements 4 on the glass wafer 1 and/or the second substrate 5, the glass wafer 1 (
(35) A displacement or a parallel displacement out of the substrate planes 1a, 1b of the regions 38 of the glass wafer 1 covered by the reinforcing elements 4 can be supported by a central arrangement of the reinforcing elements 4 in the deflection regions 21 (
(36) The deformation step can be performed until the reinforcing elements 4 or the glass wafer 1 rest on the bottom 31 of the third depressions 6 of the second substrate 5 or the reinforcing elements 4 arranged therein.
(37) According to the method according to
(38) The silicon wafer 4a is connected to one of the substrate sides 1a, 1b of the glass wafer 1 to form a further base stack 7 by means of anodic bonding.
(39) In the subsequent structuring process, the silicon wafer 4a of the further base stack 7 is structured by wet-chemical etching methods and/or dry-etching methods such that in the regions of the glass wafer 1 which function as optical windows 30, silicon remains as the reinforcing elements 4 (
(40) By way of an embodiment of the bottoms 31 of the third depressions 6 which is inclined at least in partial regions and/or a non-central arrangement of the reinforcing elements 4 in the deflection regions 21, a cover 22 having optical windows 32 embodied as displaced and inclined may be produced, as shown in
(41) In the process variant according to
(42) Alternatively, as shown in
(43) For this purpose, reinforcing elements 4, which function in particular as molding elements, are arranged on a further second substrate 5a, and the substrate side 1a of the glass wafer 1, which does not have reinforcing elements 4, is brought into contact with the further second substrate 5a or the reinforcing elements 4 arranged thereon. In the example according to
(44) Alternatively to the combination of the process variants according to
(45) Further modifications of the described process variants to produce a cover 22 according to the method according to the invention are shown in
(46) By arranging multiple reinforcing elements 4 in one deflection region 21 (for example,
(47) The alignment depressions 5b in the glass wafer 1 (see
(48) Finally, the reinforcing elements 4 and the support structures 13 are removed by wet-chemical selective etching from the glass wafer 1.
(49) In the process variants according to
(50)
(51) During the following anodic bonding of base stack 7 and the second substrate 5, for example, a silicon wafer, the fixing elements 16 according to
(52) Alternatively, the reinforcing elements 4 can be connected via the fixing elements 16 to rigid regions or regions which are dimensionally stable in the further process operation of the first substrate 1 (
(53) During the subsequent heating and deforming, the clamped or bonded fixing elements 16 prevent displacement and/or twisting of the reinforcing elements 4. In addition, the fixing elements 16 reduce undesired deformations, for example, sagging, in the regions 38 of the glass wafer 1 covered by the fixing elements 16 (
(54) In the above-mentioned process variants, the deformation of the glass wafer 1 is assisted by a force which results from a pressure difference between ambient pressure and the pressure prevailing in the cavities 10 enclosed by the (further) base stack 7 or the glass wafer 1 and the second substrate 5 or the base stack 7a.
(55) In a further process variant according to
(56) To increase the precision of the inclination of the inclined optical windows 8, special stop structures 20, which delimit the maximum deflection of the stamp element 19, are applied or arranged on the glass wafer 1. These stop structures 20 can be applied in the form of one or multiple layers or layer sequences on the glass wafer 1. The maximum deflection of the stamp element 19 and therefore the desired inclination may be set by the variation of the thickness of the layers or layer sequences. The shaping process is completed as soon as the shaping device 18 comes into contact with the stop structures 20, as shown in
(57) A further increase of the precision of the shaping process may be achieved by a stamp element 19, which has an inclined stamp surface (
(58) The shaping device 18 can be designed so that it can be used multiple times, for example, in that a direct contact of the shaping device 18 with the glass wafer 1 is avoided (
(59) The process variant according to
(60) The reinforcing elements 4 made of silicon are provided with a silicon dioxide layer in this case before the arrangement on the second substrate 5 on the side which is brought into contact with the glass wafer 1 during the heating and deforming. The silicon dioxide layer is structured such that as a result, the reinforcing elements 4 have moth-eye structures 40 made of silicon dioxide (
(61) The reinforcing elements 4 are arranged thereafter by means of vacuum handler 3 on the second substrate 5 (
(62) The glass wafer 1 is brought into contact with the reinforcing elements 4 or the moth-eye structures 40 by the heating and deforming (
(63) After separation of the structured glass wafer 1 from the second substrate 5 (
(64) The process variant according to
(65) A glass wafer 1 made of borosilicate glass, which is provided with feedthroughs 6b, forms the starting point. The feedthroughs 6b can be generated by means of drilling (for example, ultrasonic drilling, laser drilling). Thereafter, the glass wafer 1 is connected to a reinforcing substrate 4a made of high-temperature-resistant or high-melting-point glass (e.g., Corning Eagle XG, Corning Lotus Glass, Schott AF32) by a thermal bonding process. Alternatively, the connection can also be produced by an anodic bonding process, wherein in this case a silicon layer is deposited on the side of the reinforcing substrate 4a to be connected to the glass wafer 1 before the connecting step. After the anodic bonding, this silicon layer is removed (for example, by means of wet-chemical etching) in the regions of the reinforcing substrate 4a which are to function as optical windows.
(66) Both substrate sides of the reinforcing substrate 4a are embodied as polished and plane-parallel. In addition, the reinforcing substrate 4a has second depressions 4b, which prevent a contact of the saw 3a with the glass wafer 1 during the following sawing step to generate the reinforcing elements 4 (
LIST OF REFERENCE SIGNS
(67) 1 first substrate, for example, glass wafer 1a first substrate plane or substrate side of the first substrate 1b second substrate plane or substrate side of the first substrate 1c first depression in the first substrate 2 receptacle substrate 3 vacuum handler 3a saw 4 reinforcing element or further reinforcing element 4a reinforcing substrate or reinforcing layer 4b second depression in the reinforcing substrate or in the reinforcing layer 5 second substrate, for example, silicon wafer 5a further second substrate 5b alignment depression in the first substrate 5c alignment depression in the second substrate 6 third depression in the second substrate 6b feedthrough in the first substrate 7 base stack or further base stack 7a main stack 8 inclined optical window 9 transmission surface of the optical window 10 cavity between base stack and second substrate or first substrate/further base stack and main stack 11 support surface 11a support region 12 layer system made of base stack and second substrate or first substrate/further base stack and main stack 13 support structure 14 counter contact surface of the second substrate 15 channel in the second substrate, for example, as a connection for a vacuum pump 16 fixing element 17 receptacle groove in the second substrate 18 shaping device 19 stamp element, for example, having linear or beveled stamp surface 20 stop structure 21 deflection region 22 cover 23 contact surface of the cover 24 carrier substrate 25 micromirror 26 suspension of the micromirror 27 contact pad 28 incident radiation 29 deflected radiation 30 displaced optical window 31 bottom of the third depression in the second substrate 32 optical window embodied as displaced and inclined 34 cover unit 36 delimitation surface of the receptacle substrate 37 receptacle depression 38 covered region of the first substrate 40 moth-eye structure